Layout and layout design method, system, device and storage medium

Abstract

A layout, layout design method, system, device, and storage medium are disclosed. The layout design method includes: forming a first layout, the first layout including a first master graphic, the first master graphic being used to form a first target structure, and the first master graphic corresponding to the first target structure having unequal stress on both sides along a specific direction serving as a graphic to be compensated; forming a second layout based on the first layout, the second layout including a second master graphic, the second master graphic being used to form a second target structure located above the first target structure, the second master graphic having a reference position relative to the first master graphic; wherein, the position of the second master graphic corresponding to the graphic to be compensated along the specific direction on the graphic to be compensated is offset relative to the reference position, and the offset direction is the same as the deformation direction of the first target structure corresponding to the graphic to be compensated, the deformation direction being related to the stress difference on both sides of the first target structure. This reduces the probability of misalignment between the second target structure and the first target structure.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and more particularly to a layout and layout design method, system, device and storage medium. Background Technology

[0002] With the continuous development of integrated circuit manufacturing technology, people have increasingly higher requirements for the integration level and performance of integrated circuits. In order to improve integration level and reduce costs, the critical dimensions of components are constantly shrinking, and the circuit density inside integrated circuits is increasing. This development makes it impossible for the wafer surface to provide enough area to realize electrical interconnection between devices.

[0003] To meet the electrical interconnection requirements after the critical dimensions have been reduced, a contact plug is typically formed above the top of the target structure that needs to have its electrical properties brought out, thereby achieving electrical interconnection between the target structure and external circuitry through the contact plug.

[0004] Currently, the alignment accuracy between stacked structures still needs to be improved. Summary of the Invention

[0005] The problem solved by the embodiments of the present invention is to provide a layout and layout design method, system, device and storage medium to improve the alignment accuracy between stacked structures.

[0006] To address the aforementioned problems, this invention provides a layout design method, comprising: forming a first layout, the first layout including a first main graphic, the first main graphic being used to form a first target structure, and the first main graphic corresponding to the first target structure having unequal stresses on both sides along a specific direction serving as a graphic to be compensated; forming a second layout based on the first layout, the second layout including a second main graphic, the second main graphic being used to form a second target structure located above the first target structure, the second main graphic having a reference position relative to the first main graphic; wherein, along the specific direction, the position of the second main graphic corresponding to the graphic to be compensated on the graphic to be compensated is offset relative to the reference position, and the offset direction is the same as the deformation direction of the first target structure corresponding to the graphic to be compensated, the deformation direction being related to the stress difference on both sides of the first target structure.

[0007] Accordingly, this embodiment of the invention also provides a layout, including: a first layout, the first layout including a first main graphic, the first main graphic being used to form a first target structure, and the first main graphic corresponding to the first target structure having unequal stress on both sides along a specific direction serving as a graphic to be compensated; a second layout, the second layout including a second main graphic, the second main graphic being used to form a second target structure located above the top of the first target structure, the second main graphic having a reference position relative to the first main graphic; wherein, along the specific direction, the position of the second main graphic corresponding to the graphic to be compensated on the graphic to be compensated is offset relative to the reference position, and the offset direction is the same as the deformation direction of the first target structure corresponding to the graphic to be compensated, the deformation direction being related to the stress difference on both sides of the first target structure.

[0008] Accordingly, this invention also provides a layout design system, comprising: a first layout forming module for forming a first layout, the first layout including a first main graphic, the first main graphic being used to form a first target structure, and the first main graphic corresponding to the first target structure having unequal stress on both sides along a specific direction serving as a graphic to be compensated; and a second layout forming module for forming a second layout, the second layout including a second main graphic, the second main graphic being used to form a second target structure located above the first target structure, the second main graphic having a reference position relative to the first main graphic; wherein, along the specific direction, the position of the second main graphic corresponding to the graphic to be compensated on the graphic to be compensated is offset relative to the reference position, and the offset direction is the same as the deformation direction of the first target structure corresponding to the graphic to be compensated, the deformation direction being related to the stress difference on both sides of the first target structure.

[0009] Accordingly, embodiments of the present invention also provide an apparatus, including at least one memory and at least one processor, wherein the memory stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the layout design method provided in embodiments of the present invention.

[0010] Accordingly, embodiments of the present invention also provide a storage medium storing one or more computer instructions, which are used to implement the layout design method provided in the embodiments of the present invention.

[0011] Compared with the prior art, the technical solution of the embodiments of the present invention has the following advantages:

[0012] In the layout design method provided by this invention, a second layout is formed based on a first layout. The second layout includes a second main graphic, which is used to form a second target structure located above the first target structure. The second main graphic has a reference position relative to the first main graphic. Along a specific direction, the position of the second main graphic on the corresponding graphic to be compensated is offset relative to the reference position, and the offset direction is the same as the deformation direction of the first target structure corresponding to the graphic to be compensated. The deformation direction is related to the stress difference between the two sides of the first target structure. By offsetting the position of the second main graphic on the corresponding graphic to be compensated relative to the reference position during the formation of the second layout, and ensuring that the offset direction is the same as the deformation direction of the first target structure corresponding to the graphic to be compensated, the second target structure formed based on the second main graphic can still be aligned with the first target structure at the reference position when the first target structure deforms, thus reducing the probability that the second target structure and the first target structure cannot be aligned. Attached Figure Description

[0013] Figure 1 It is a map diagram;

[0014] Figures 2 to 3 This is a schematic diagram showing the steps corresponding to each embodiment of the layout design method of the present invention;

[0015] Figure 4 This is the version of the invention. Figure 1 The schematic diagram corresponding to the embodiment;

[0016] Figure 5 This is a functional block diagram of an embodiment of the layout design system of the present invention;

[0017] Figure 6 This is a hardware structure diagram of an embodiment of the device provided by the present invention. Detailed Implementation

[0018] As the background information indicates, the alignment accuracy between stacked structures still needs improvement. This paper analyzes the reasons for this performance limitation using a specific layout as an example.

[0019] Specifically, refer to Figure 1 This shows a schematic diagram of a map.

[0020] The layout includes: a first layout, which includes an active region 20A and an isolation region 20B for isolating adjacent active regions 20A, the first layout including a first main graphic 21 located in the active region 20A; and a second layout, which includes a second main graphic 27 located in the first main graphic 21, the second main graphic 27 having a reference position relative to the first main graphic 21, and the second main graphic 27 being located at the reference position.

[0021] When manufacturing a semiconductor structure based on the layout, the isolation region 20B in the first layout 21 is used to form an isolation structure, the first main pattern 21 is used to form a first target structure, and the second main pattern 27 is used to form a second target structure located above the first target structure.

[0022] Research has revealed that the first target structure (e.g., source / drain doped layer) in the active region is prone to deformation due to stress generated by the isolation structure in the isolation region. This makes it difficult for the second target structure (e.g., source / drain plug) above the source / drain doped layer to achieve precise alignment with the source / drain doped layer at the reference position. Therefore, the alignment accuracy between stacked structures still needs to be improved.

[0023] To address the aforementioned technical problem, this invention provides a layout design method, comprising: forming a first layout, the first layout including a first main graphic, the first main graphic being used to form a first target structure, and the first main graphic corresponding to the first target structure having unequal stresses on both sides along a specific direction serving as a graphic to be compensated; forming a second layout based on the first layout, the second layout including a second main graphic, the second main graphic being used to form a second target structure located above the first target structure, the second main graphic having a reference position relative to the first main graphic; wherein, along the specific direction, the position of the second main graphic corresponding to the graphic to be compensated on the graphic to be compensated is offset relative to the reference position, and the offset direction is the same as the deformation direction of the first target structure corresponding to the graphic to be compensated, the deformation direction being related to the stress difference on both sides of the first target structure.

[0024] In the layout design method provided by this invention, a second layout is formed based on a first layout. The second layout includes a second main graphic, which is used to form a second target structure located above the first target structure. The second main graphic has a reference position relative to the first main graphic. Along a specific direction, the position of the second main graphic on the corresponding graphic to be compensated is offset relative to the reference position, and the offset direction is the same as the deformation direction of the first target structure corresponding to the graphic to be compensated. The deformation direction is related to the stress difference between the two sides of the first target structure. By offsetting the position of the second main graphic on the corresponding graphic to be compensated relative to the reference position during the formation of the second layout, and ensuring that the offset direction is the same as the deformation direction of the first target structure corresponding to the graphic to be compensated, the second target structure formed based on the second main graphic can still be aligned with the first target structure at the reference position when the first target structure deforms, thus reducing the probability that the second target structure and the first target structure cannot be aligned.

[0025] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0026] Figures 2 to 3 This is a schematic diagram showing the steps corresponding to each step of an embodiment of the layout design method of the present invention.

[0027] refer to Figure 2 A first layout 100 is formed, which includes a first main graphic 101. The first main graphic 101 is used to form a first target structure (not shown in the figure), and the first main graphic 101 corresponding to the first target structure with unequal stress on both sides along a specific direction is used as the compensation graphic 102.

[0028] It should be noted that, Figure 2 Only one first main graphic 101 is shown in the diagram, but the number of first main graphic 101 included in the first layout 100 is not limited to one.

[0029] In this embodiment, a second layout is subsequently formed based on the first layout 100.

[0030] In this embodiment, the first main pattern 101 is used to form a first target structure, specifically, the first target structure is a source / drain doped layer. In other embodiments, the first target structure may also be a gate structure.

[0031] It should be noted that, in this embodiment, since the first target structure has unequal stress on both sides, the first target structure is prone to deformation. In order to align the deformed first target structure with the subsequently formed second target structure (the second target structure is formed based on the subsequently formed second pattern), the first main pattern 101 corresponding to the first target structure with unequal stress on both sides is used as the pattern to be compensated 102.

[0032] In this embodiment, the first main graphic 101 has a length direction (e.g., Figure 2 (in the X direction) and the width direction (e.g.) Figure 2 (in the Y direction), the length direction and the width direction are perpendicular.

[0033] Specifically, the first main graphic 101 has a length direction and a width direction. In the subsequent step of forming a second layout based on the first layout 100, a second main graphic corresponding to the graphic to be compensated 102 can be formed in the length direction or width direction of the first main graphic 101.

[0034] In this embodiment, the specific direction includes one or both of the length direction and the width direction of the first main graphic.

[0035] Specifically, the first main pattern 101 has a length direction and a width direction. When the first target structure formed based on the first main pattern 101 has unequal stress on both sides along the length direction, the first main pattern 101 serves as a compensation pattern 102. When the first target structure formed based on the first main pattern 101 has unequal stress on both sides along the width direction, the first main pattern 101 serves as a compensation pattern 102. When the first target structure formed based on the first main pattern 101 has unequal stress on both sides along both the length and width directions, the first main pattern 101 serves as a compensation pattern 102.

[0036] In this embodiment, the width of the first main pattern 101 is relatively small, and the stress along the width direction has a significant impact on the alignment accuracy of the second target structure and the first target structure. Therefore, as an example, when the first target structure formed based on the first main pattern 101 has unequal stress on both sides along the width direction, the first main pattern 101 serves as a compensation pattern 102.

[0037] Understandably, in the actual design process, compensation graphic 102 can be selected according to the actual layout design.

[0038] It should be noted that, in this embodiment, the first layout 100 includes a graphic area 100A and an isolation area 100B for isolating adjacent graphic areas 100A. The first main graphic 101 is located in the graphic area 100A, and the widths of the isolation areas 100B on both sides of the graphic to be compensated 102 along the specific direction are different. In this embodiment, the area where the first main graphic 101 is located is the graphic area 100A.

[0039] The pattern area 100A is used to form an active region, which is used to form an active device. The first main pattern 101 is an active region pattern. As an example, the first main pattern 101 located in the pattern area 100A is used to form a source / drain doped layer.

[0040] The isolation region 100B is used to electrically isolate the adjacent graphic region 100A. As an example, the isolation region 100B is used to form an isolation structure.

[0041] It should be noted that the widths of the isolation regions 100B on both sides of the pattern to be compensated 102 along the specific direction are different. Therefore, in the process of forming a semiconductor structure based on the first pattern, the widths of the isolation structures in the isolation regions 100B are different along the specific direction, which causes the first target structure formed based on the first main pattern 101 to have unequal stresses on both sides along the specific direction.

[0042] In this embodiment, the stress is tensile stress. The greater the tensile stress, the more the first target structure formed based on the first main pattern 101 deforms towards the side with the greater tensile stress.

[0043] In this embodiment, before forming the second layout 106 based on the first layout 100, the method further includes: comparing the widths of the isolation areas 100B on both sides of the graphic to be compensated 102 along the specific direction.

[0044] It should be noted that by comparing the widths of the isolation areas 100B on both sides of the pattern to be compensated 102 along the specific direction, the deformation direction of the first target structure formed based on the first main pattern 101 is determined. Accordingly, in the subsequent process of forming the second layout, a corresponding second main pattern is formed based on the pattern to be compensated 102 and its corresponding deformation direction.

[0045] refer to Figure 3 A second layout 106 is formed based on the first layout 100. The second layout 106 includes a second main graphic 107, which is used to form a second target structure located above the first target structure. The second main graphic 107 has a reference position relative to the first main graphic 101 (e.g., ...). Figure 3(The position is shown by the dashed line L1); wherein, along the specific direction, the second main pattern 107 corresponding to the pattern to be compensated 102 is offset from the reference position on the pattern to be compensated 102, and the offset direction is the same as the deformation direction of the first target structure corresponding to the pattern to be compensated 102, and the deformation direction is related to the stress difference between the two sides of the first target structure.

[0046] It should be noted that, in this embodiment, during the formation of the second pattern 106, the position of the second main pattern 107 on the corresponding pattern to be compensated 102 is offset relative to the reference position, and the offset direction is the same as the deformation direction of the first target structure corresponding to the pattern to be compensated 102. Accordingly, when the first target structure is deformed, the second target structure formed based on the second main pattern 107 can still be aligned with the first target structure at the reference position, reducing the probability that the second target structure and the first target structure cannot be aligned.

[0047] In this embodiment, when the stress is tensile stress, in the step of forming the second pattern 106 based on the first pattern 100, the position of the second main pattern 107 on the corresponding pattern to be compensated 102 is shifted relative to the reference position towards the side of the isolation area 100B with a larger width along the specific direction.

[0048] Specifically, the stress is tensile stress. The greater the tensile stress, the more the first target structure formed based on the first main pattern 101 deforms towards the side with greater tensile stress. At the same time, the magnitude of the tensile stress is related to the width of the isolation structure located in the isolation zone 100B. The wider the isolation structure, the greater the tensile stress generated on the first target structure. Correspondingly, this causes the first target structure to shift towards the side of the isolation zone 100B with a larger width. In order to increase the probability that the second target structure formed based on the second main pattern 107 is aligned with the first target structure at the reference position, in the step of forming the second layout 106, the position of the second main pattern 107 on the corresponding pattern to be compensated 102 is shifted relative to the reference position towards the side of the isolation zone 100B with a larger width along the specific direction.

[0049] In other embodiments, when the stress is compressive stress, in the step of forming a second layout based on the first layout, the position of the second main pattern on the corresponding pattern to be compensated is shifted relative to the reference position towards the side of the isolation zone with a smaller width along the specific direction.

[0050] It should be noted that, along the specific direction, the offset distance D of the position of the second main pattern 107 on the corresponding pattern 102 to be compensated relative to the reference position should not be too large or too small. If the offset distance D of the position of the second main pattern 107 on the corresponding pattern 102 to be compensated relative to the reference position is too large, the probability of the second target structure formed by the second main pattern 107 being aligned with the first target structure at the reference position is reduced. Therefore, in this embodiment, along the specific direction, the offset distance of the position of the second main pattern 107 on the corresponding pattern 102 to be compensated relative to the reference position is 0 nm to 1000 nm.

[0051] In this embodiment, the second main pattern 107 is a contact hole pattern.

[0052] Specifically, the contact hole pattern is used to form interconnect contact holes, that is, the second target structure is an interconnect contact hole. As an example, the interconnect contact hole is used to form a source / drain plug, and the source / drain plug is electrically connected to the source / drain doped layer, thereby realizing that the source / drain doped layer is electrically connected to the external circuit structure through the source / drain plug.

[0053] In other embodiments, when the first target structure is a gate structure, the interconnect contact hole is used to form a gate plug, and the gate plug is electrically connected to the gate structure, thereby realizing that the gate structure is electrically connected to an external circuit structure through the gate plug.

[0054] Accordingly, the present invention also provides a layout. Figure 4 This is the version of the invention. Figure 1 Schematic diagram corresponding to the embodiment.

[0055] refer to Figure 4 The layout includes: a first layout, the first layout including a first main graphic 201, the first main graphic 201 being used to form a first target structure, and the first main graphic 201 corresponding to the first target structure having unequal stress on both sides along a specific direction serving as a compensation graphic 202; a second layout, the second layout including a second main graphic 207, the second main graphic 207 being used to form a second target structure located above the first target structure, the second main graphic 207 having a reference position relative to the first main graphic 201 (e.g., Figure 4 (The position is indicated by the dashed line L2); wherein, along the specific direction, the second main pattern 207 corresponding to the pattern to be compensated 202 is offset from the reference position on the pattern to be compensated 202, and the offset direction is the same as the deformation direction of the first target structure corresponding to the pattern to be compensated 202, and the deformation direction is related to the stress difference between the two sides of the first target structure.

[0056] The first layout includes a first main graphic 201, which is used to form a first target structure. The first main graphic 201 corresponding to the first target structure with unequal stress on both sides along a specific direction is used as the compensation graphic 202.

[0057] It should be noted that, Figure 4 Only one first main graphic 201 is shown in the diagram, but the number of first main graphic 201s included in the first layout is not limited to one.

[0058] In this embodiment, the first main pattern 201 is used to form a first target structure, specifically, the first target structure is a source / drain doped layer. In other embodiments, the first target structure may also be a gate structure.

[0059] It should be noted that, in this embodiment, since the first target structure has unequal stress on both sides, the first target structure is prone to deformation. In order to align the deformed first target structure with the subsequently formed second target structure (the second target structure is formed based on the second layout), the first main pattern 201 corresponding to the first target structure with unequal stress on both sides is used as the pattern to be compensated 202.

[0060] In this embodiment, the first main graphic 201 has a length direction (e.g., Figure 4 (in the X direction) and the width direction (e.g.) Figure 4 (in the Y direction), the length direction and the width direction are perpendicular.

[0061] Specifically, the first main graphic 201 has a length direction and a width direction, and can form a second main graphic corresponding to the graphic to be compensated 202 in the length direction or width direction of the first main graphic 201.

[0062] In this embodiment, the specific direction includes one or both of the length direction and the width direction of the first main graphic 201.

[0063] Specifically, the first main pattern 201 has a length direction and a width direction. When the first target structure formed based on the first main pattern 201 has unequal stress on both sides along the length direction, the first main pattern 201 serves as a compensation pattern 202. When the first target structure formed based on the first main pattern 201 has unequal stress on both sides along the width direction, the first main pattern 201 serves as a compensation pattern 202. When the first target structure formed based on the first main pattern 201 has unequal stress on both sides along both the length and width directions, the first main pattern 201 serves as a compensation pattern 202.

[0064] In this embodiment, the width of the first main pattern 201 is relatively small, and the stress along the width direction has a significant impact on the alignment accuracy of the second target structure and the first target structure. Therefore, as an example, when the first target structure formed based on the first main pattern 201 has unequal stress on both sides along the width direction, the first main pattern 201 serves as a compensation pattern 202.

[0065] Understandably, in the actual design process, compensation graphic 202 can be selected according to the actual layout design.

[0066] It should be noted that, in this embodiment, the first layout 200 includes a graphic area 200A and an isolation area 200B for isolating adjacent graphic areas 200A. The first main graphic 201 is located in the graphic area 200A, and the widths of the isolation areas 200B on both sides of the graphic to be compensated 202 along the specific direction are different. In this embodiment, the area where the first main graphic 201 is located is the graphic area 200A.

[0067] The pattern area 200A is used to form an active region, which is used to form an active device. The first main pattern 201 is an active region pattern. As an example, the first main pattern 201 located in the pattern area 200A is used to form a source / drain doped layer.

[0068] The isolation region 200B is used to electrically isolate the adjacent graphic region 200A. As an example, the isolation region 200B is used to form an isolation structure.

[0069] It should be noted that the widths of the isolation regions 200B on both sides of the pattern to be compensated 202 along the specific direction are different. Therefore, in the process of forming a semiconductor structure based on the first pattern, the widths of the isolation structures in the isolation regions 200B are different along the specific direction, which causes the first target structure formed based on the first master pattern 201 to have unequal stresses on both sides along the specific direction.

[0070] In this embodiment, the stress is tensile stress. The greater the tensile stress, the more the first target structure formed based on the first main pattern 201 deforms towards the side with the greater tensile stress.

[0071] The second drawing includes a second main graphic 207, which is used to form a second target structure located above the first target structure. The second main graphic 207 has a reference position relative to the first main graphic 201. Along the specific direction, the position of the second main graphic 207 corresponding to the graphic to be compensated 202 on the graphic to be compensated 202 is offset relative to the reference position, and the offset direction is the same as the deformation direction of the first target structure corresponding to the graphic to be compensated 202. The deformation direction is related to the stress difference between the two sides of the first target structure.

[0072] It should be noted that in this embodiment, by offsetting the position of the second main graphic 207 on the corresponding graphic to be compensated 202 relative to the reference position, and the offset direction is the same as the deformation direction of the first target structure corresponding to the graphic to be compensated 202, the second target structure formed based on the second main graphic 207 can still be aligned with the first target structure at the reference position when the first target structure is deformed, thus reducing the probability that the second target structure and the first target structure cannot be aligned.

[0073] In the embodiment, when the stress is tensile stress, the position of the second main pattern 207 on the corresponding pattern to be compensated 202 is shifted relative to the reference position towards the side of the isolation zone 200B with a larger width along the specific direction.

[0074] Specifically, the stress is tensile stress. The greater the tensile stress, the more the first target structure formed based on the first main pattern 201 deforms towards the side with greater tensile stress. At the same time, the magnitude of the tensile stress is related to the width of the isolation structure located in the isolation zone 200B. The wider the isolation structure, the greater the tensile stress generated on the first target structure. Correspondingly, this causes the first target structure to shift towards the side of the isolation zone 200B with a larger width. In order to increase the probability of the second target structure formed based on the second main pattern 207 aligning with the first target structure at the reference position, along the specific direction, the position of the second main pattern 207 on the corresponding pattern to be compensated 202 is shifted relative to the reference position towards the side of the isolation zone 200B with a larger width.

[0075] In other embodiments, when the stress is compressive stress, in the step of forming a second layout based on the first layout, the position of the second main pattern on the corresponding pattern to be compensated is shifted relative to the reference position towards the side of the isolation zone with a smaller width along the specific direction.

[0076] It should be noted that, along the specific direction, the offset distance of the second main pattern 207 on the corresponding pattern 202 to be compensated relative to the reference position should not be too large or too small. If the offset distance of the second main pattern 207 on the corresponding pattern 202 to be compensated relative to the reference position is too large, the probability of the second target structure formed by the second main pattern 207 being aligned with the first target structure at the reference position is reduced. Therefore, in this embodiment, along the specific direction, the offset distance of the second main pattern 207 on the corresponding pattern 102 to be compensated relative to the reference position is 0 nm to 1000 nm.

[0077] In this embodiment, the second main pattern 207 is a contact hole pattern.

[0078] Specifically, the contact hole pattern is used to form interconnect contact holes, that is, the second target structure is an interconnect contact hole. As an example, the interconnect contact hole is used to form a source / drain plug, and the source / drain plug is electrically connected to the source / drain doped layer, thereby realizing that the source / drain doped layer is electrically connected to the external circuit structure through the source / drain plug.

[0079] In other embodiments, when the first target structure is a gate structure, the interconnect contact hole is used to form a gate plug, and the gate plug is electrically connected to the gate structure, thereby realizing that the gate structure is electrically connected to an external circuit structure through the gate plug.

[0080] Accordingly, the present invention also provides a layout design system. Figure 5 This is a functional block diagram of an embodiment of the layout design system of the present invention.

[0081] In this embodiment, the layout design system 302 includes: a first layout forming module 300, used to form a first layout, the first layout including a first main graphic, the first main graphic being used to form a first target structure, and the first main graphic corresponding to the first target structure having unequal stress on both sides along a specific direction serving as a graphic to be compensated; a second layout forming module 301, used to form a second layout, the second layout including a second main graphic, the second main graphic being used to form a second target structure located above the first target structure, the second main graphic having a reference position relative to the first main graphic; wherein, along the specific direction, the position of the second main graphic corresponding to the graphic to be compensated on the graphic to be compensated is offset relative to the reference position, and the offset direction is the same as the deformation direction of the first target structure corresponding to the graphic to be compensated, the deformation direction being related to the stress difference on both sides of the first target structure.

[0082] The design graphics provided by the first layout forming module 300 provide a design basis for forming the second layout.

[0083] In this embodiment, the first main pattern is used to form the first target structure, specifically, the first target structure is a source / drain doped layer. In other embodiments, the first target structure may also be a gate structure.

[0084] It should be noted that, in this embodiment, since the first target structure has unequal stress on both sides, the first target structure is prone to deformation. In order to align the deformed first target structure with the subsequently formed second target structure (the second target structure is formed based on the subsequently formed second pattern), the first main pattern corresponding to the first target structure with unequal stress on both sides is used as the pattern to be compensated.

[0085] In this embodiment, the first main graphic has a length direction and a width direction, and the length direction and the width direction are perpendicular to each other.

[0086] Specifically, the first main graphic has a length direction and a width direction. In the subsequent step of forming a second layout based on the first layout, a second main graphic corresponding to the graphic to be compensated can be formed in the length direction or the width direction of the first main graphic.

[0087] In this embodiment, the specific direction includes one or both of the length direction and the width direction of the first main graphic.

[0088] Specifically, the first main pattern has a length direction and a width direction. When the first target structure formed based on the first main pattern has unequal stress on both sides along the length direction, the first main pattern serves as a compensation pattern; when the first target structure formed based on the first main pattern has unequal stress on both sides along the width direction, the first main pattern serves as a compensation pattern; when the first target structure formed based on the first main pattern has unequal stress on both sides along both the length and width directions, the first main pattern serves as a compensation pattern.

[0089] In this embodiment, the width of the first main pattern is relatively small, and the stress along the width direction has a significant impact on the alignment accuracy of the second target structure and the first target structure. Therefore, as an example, when the first target structure formed based on the first main pattern has unequal stress on both sides along the width direction, the first main pattern is used as a compensation pattern.

[0090] Understandably, in the actual design process, compensation graphics can be selected based on the actual layout design.

[0091] It should be noted that, in this embodiment, the first layout includes a graphic area and an isolation area for isolating adjacent graphic areas. The first main graphic is located in the graphic area, and the widths of the isolation areas on both sides of the graphic to be compensated along the specific direction are different. In this embodiment, the area where the first main graphic is located is the graphic area.

[0092] The patterned area is used to form an active region, which is used to form an active device. The first main pattern is an active region pattern. As an example, the first main pattern located in the patterned area is used to form a source / drain doped layer.

[0093] The isolation zone is used to electrically isolate adjacent graphic areas; as an example, the isolation zone is used to form an isolation structure.

[0094] It should be noted that the width of the isolation region on both sides of the pattern to be compensated along the specific direction is different. Therefore, in the process of forming a semiconductor structure based on the first pattern, the width of the isolation structure in the isolation region is different along the specific direction, so that the first target structure formed based on the first master pattern has unequal stress on both sides along the specific direction.

[0095] In this embodiment, the stress is tensile stress. The greater the tensile stress, the more the first target structure formed based on the first main pattern will deform towards the side with greater tensile stress.

[0096] The first pattern forming module 300 further includes a data comparison unit (not shown), used to compare the width of the isolation area on both sides of the pattern to be compensated along the specific direction.

[0097] It should be noted that by comparing the width of the isolation area on both sides of the graphic to be compensated along the specific direction, the deformation direction of the first target structure formed based on the first main graphic is determined. Accordingly, in the subsequent process of forming the second layout, a corresponding second main graphic is formed based on the graphic to be compensated and its corresponding deformation direction.

[0098] The second pattern forming module 301 forms a second target structure located above the top of the first target structure. It offsets the position of the second main pattern on the corresponding pattern to be compensated relative to the reference position, and the offset direction is the same as the deformation direction of the first target structure corresponding to the pattern to be compensated. Accordingly, when the first target structure is deformed, the second target structure formed based on the second main pattern can still be aligned with the first target structure at the reference position, reducing the probability that the second target structure and the first target structure cannot be aligned.

[0099] In this embodiment, when the stress is tensile stress, in the step of forming the second pattern based on the first pattern, the position of the second main pattern on the corresponding pattern to be compensated is shifted relative to the reference position towards the side of the isolation area with a larger width along the specific direction.

[0100] Specifically, the stress is tensile stress. The greater the tensile stress, the more the first target structure formed based on the first main pattern deforms towards the side with greater tensile stress. At the same time, the magnitude of the tensile stress is related to the width of the isolation structure located in the isolation zone. The wider the isolation structure, the greater the tensile stress it generates on the first target structure. Consequently, the first target structure shifts towards the side of the isolation zone with a larger width. In order to increase the probability that the second target structure formed based on the second main pattern is aligned with the first target structure at the reference position, in the step of forming the second layout, the position of the second main pattern on the corresponding pattern to be compensated is shifted relative to the reference position towards the side of the isolation zone with a larger width along the specific direction.

[0101] In other embodiments, when the stress is compressive stress, in the step of forming a second layout based on the first layout, the position of the second main pattern on the corresponding pattern to be compensated is shifted relative to the reference position towards the side of the isolation zone with a smaller width along the specific direction.

[0102] It should be noted that, along the specific direction, the offset distance of the second main pattern on the corresponding pattern to be compensated relative to the reference position should not be too large or too small. If the offset distance of the second main pattern on the corresponding pattern to be compensated relative to the reference position is too large, the probability of the second target structure formed by the second main pattern 107 aligning with the first target structure at the reference position is reduced. Therefore, in this embodiment, along the specific direction, the offset distance of the second main pattern on the corresponding pattern to be compensated relative to the reference position is 0 nm to 1000 nm.

[0103] In this embodiment, the second main pattern is a contact hole pattern.

[0104] Specifically, the contact hole pattern is used to form interconnect contact holes, that is, the second target structure is an interconnect contact hole. As an example, the interconnect contact hole is used to form a source / drain plug, and the source / drain plug is electrically connected to the source / drain doped layer, thereby realizing that the source / drain doped layer is electrically connected to the external circuit structure through the source / drain plug.

[0105] In other embodiments, when the first target structure is a gate structure, the interconnect contact hole is used to form a gate plug, and the gate plug is electrically connected to the gate structure, thereby realizing that the gate structure is electrically connected to an external circuit structure through the gate plug.

[0106] This invention also provides a device that can implement the layout design method provided in this invention through a program-based layout design method described above. An optional hardware structure for the terminal device provided in this invention can be as follows: Figure 6 As shown, it includes: at least one processor 01, at least one communication interface 02, at least one memory 03, and at least one communication bus 04.

[0107] In this embodiment, the number of processor 01, communication interface 02, memory 03, and communication bus 04 is at least one, and the processor 01, communication interface 02, and memory 03 communicate with each other through communication bus 04. Communication interface 02 can be an interface of a communication module for network communication, such as the interface of a GSM module. Processor 01 may be a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement embodiments of the present invention. Memory 03 may include high-speed RAM and may also include non-volatile memory (NVM), such as at least one disk storage device. Memory 03 stores one or more computer instructions, which are executed by processor 01 to implement the layout design method provided in this embodiment of the present invention.

[0108] It should be noted that the aforementioned terminal device may also include other devices (not shown) that may not be essential to understanding the content disclosed in the embodiments of the present invention; given that these other devices may not be essential for understanding the content disclosed in the embodiments of the present invention, the embodiments of the present invention will not describe them one by one.

[0109] This invention also provides a storage medium storing one or more computer instructions for implementing the layout design method provided in this invention.

[0110] Embodiments of the present invention can be implemented by various means, such as hardware, firmware, software, or combinations thereof. In a hardware configuration, the method according to an exemplary embodiment of the present invention can be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, etc. In a firmware or software configuration, embodiments of the present invention can be implemented in the form of modules, processes, functions, etc. Software code can be stored in memory units and executed by a processor. The memory units are located inside or outside the processor and can send data to and receive data from the processor via various known means.

[0111] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A layout design method characterized by comprising: include: A first layout is formed, the first layout includes a first main graphic, the first main graphic is used to form a first target structure, and the first main graphic corresponding to the first target structure with unequal stress on both sides along a specific direction is used as the graphic to be compensated. A second layout is formed based on the first layout. The second layout includes a second main graphic. The second main graphic is used to form a second target structure located above the first target structure. The second main graphic has a reference position relative to the first main graphic. Wherein, along the specific direction, the second main pattern corresponding to the pattern to be compensated is offset from the reference position on the pattern to be compensated, and the offset direction is the same as the deformation direction of the first target structure corresponding to the pattern to be compensated, and the deformation direction is related to the stress difference between the two sides of the first target structure.

2. The layout design method of claim 1, wherein, In the step of forming the first layout, the first layout includes a graphic area and an isolation area for isolating adjacent graphic areas, the first main graphic is located in the graphic area, and the width of the isolation area on both sides of the graphic to be compensated is different along the specific direction; Before forming the second layout based on the first layout, the method further includes: comparing the width of the isolation zone on both sides of the graphic to be compensated along the specific direction; When the stress is tensile stress, in the step of forming the second layout based on the first layout, the position of the second main pattern on the corresponding pattern to be compensated is shifted relative to the reference position towards the side of the isolation area with a larger width along the specific direction. or, When the stress is compressive stress, in the step of forming the second pattern based on the first pattern, the position of the second main pattern on the corresponding pattern to be compensated is shifted relative to the reference position towards the side of the isolation zone with a smaller width along the specific direction.

3. The layout design method of claim 2, wherein The graphic area is an active area, the first main graphic is an active area graphic, and the stress is tensile stress; The second main pattern is a contact hole pattern.

4. The layout design method according to any one of claims 1 to 3, wherein The first main graphic has a length direction and a width direction, and the length direction and the width direction are perpendicular to each other; The specific direction includes one or both of the length and width directions of the first main graphic.

5. The layout design method according to any one of claims 1 to 3, wherein In the step of forming the second layout based on the first layout, along the specific direction, the position of the second main graphic on the corresponding graphic to be compensated is offset by a distance of 0 nm to 1000 nm relative to the reference position.

6. A layout, characterized in that, include: The first layout includes a first main graphic, which is used to form a first target structure. The first main graphic corresponding to the first target structure with unequal stress on both sides along a specific direction is used as the graphic to be compensated. The second drawing includes a second main graphic, which is used to form a second target structure located above the first target structure. The second main graphic has a reference position relative to the first main graphic. Wherein, along the specific direction, the second main pattern corresponding to the pattern to be compensated is offset from the reference position on the pattern to be compensated, and the offset direction is the same as the deformation direction of the first target structure corresponding to the pattern to be compensated, and the deformation direction is related to the stress difference between the two sides of the first target structure.

7. The layout as described in claim 6, characterized in that, The first layout includes a graphic area and an isolation area for isolating adjacent graphic areas. The first main graphic is located in the graphic area, and the widths of the isolation areas on both sides of the graphic to be compensated are different along the specific direction. When the stress is tensile stress, along the specific direction, the position of the second main pattern on the corresponding pattern to be compensated is offset relative to the reference position towards the side of the isolation zone with a larger width. or, When the stress is compressive stress, along the specific direction, the position of the second main pattern on the corresponding pattern to be compensated is offset relative to the reference position towards the side of the isolation zone with a smaller width.

8. The layout as described in claim 7, characterized in that, The graphic area is an active area, the first main graphic is an active area graphic, and the stress is tensile stress; The second main pattern is a contact hole pattern.

9. The layout as described in any one of claims 6 to 8, characterized in that, The first main graphic has a length direction and a width direction, and the length direction and the width direction are perpendicular to each other; The specific direction includes one or both of the length and width directions of the first main graphic.

10. The layout as described in any one of claims 6 to 8, characterized in that, The first layout includes a graphic area and an isolation area for isolating adjacent graphic areas, wherein the first main graphic is located in the graphic area; Along the specific direction, the second main graphic corresponding to the graphic to be compensated is located at the boundary between the graphic area and the isolation area.

11. The layout as described in any one of claims 6 to 8, characterized in that, Along the specific direction, the position of the second main pattern on the corresponding pattern to be compensated is offset by a distance of 0 to 1000 nm relative to the reference position.

12. A layout design system, characterized in that, include: The first pattern forming module is used to form a first pattern, the first pattern including a first main pattern, the first main pattern being used to form a first target structure, and the first main pattern corresponding to the first target structure having unequal stress on both sides along a specific direction is used as the pattern to be compensated. The second layout forming module is used to form a second layout, the second layout including a second main graphic, the second main graphic being used to form a second target structure located above the top of the first target structure, the second main graphic having a reference position relative to the first main graphic; Wherein, along the specific direction, the second main pattern corresponding to the pattern to be compensated is offset from the reference position on the pattern to be compensated, and the offset direction is the same as the deformation direction of the first target structure corresponding to the pattern to be compensated, and the deformation direction is related to the stress difference between the two sides of the first target structure.

13. A device, characterized in that, It includes at least one memory and at least one processor, the memory storing one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the layout design method as described in any one of claims 1 to 6.

14. A storage medium, characterized in that, The storage medium stores one or more computer instructions, which are used to implement the layout design method as described in any one of claims 1 to 6.

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