A silicon carbide deposition processing apparatus using a thermal CVD method

Abstract

The application discloses a silicon carbide deposition processing equipment by using a hot CVD method and particularly relates to the technical field of silicon carbide deposition processing, which comprises a deposition processing chamber, wherein an agglomeration deposition assembly is arranged on the inside of the deposition processing chamber; the agglomeration deposition assembly comprises a sliding table for support; the sliding table is arranged at the bottom of a support frame; and the sliding table is in sliding connection with the deposition processing chamber. The gas can be guided by a hose, an L-shaped pipe and a reinforcing pipe, so that the gas containing silicon carbide can be sprayed outward with the material as a center point; the gas is heated from the inside to the outside by the heater while being sprayed; the sliding plate can drive the flow baffle to agglomerate or diffuse towards the axial point of the material through the inclination angle of the inclined seat by the traction force when the sliding plate is upwardly displaced, so that the silicon carbide containing the gas is agglomerated on the outside of the material by the blocking of the flow baffle, and the deposition efficiency and effect are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of silicon carbide deposition processing, more particularly, the present application relates to a silicon carbide deposition processing equipment using hot CVD method. BACKGROUND

[0002] The silicon carbide deposition processing equipment using hot CVD method is an equipment for depositing silicon carbide thin film on the surface of a substrate. CVD is the abbreviation of chemical vapor deposition, which is a process of decomposing gas-phase precursors and depositing thin films on solid surfaces;

[0003] Generally, the substrate is placed in a CVD reaction chamber, which is usually carried out in a vacuum or atmosphere-controlled environment. The temperature and pressure in the reaction chamber will be determined according to the gas-phase precursors used and the characteristics of the required thin film. Gas-phase precursor supply: the gas-phase precursor is the main source of silicon carbide thin film formation. It can be an organic compound (such as methylhydrosilane) or an inorganic compound (such as chlorosilane), the choice of which depends on the specific CVD process and requirements. Gas-phase precursor decomposition: after the gas-phase precursor is introduced into the reaction chamber, the gas-phase precursor will decompose into gas and solid products by heating the reaction chamber to an appropriate temperature, and the solid product is the required silicon carbide thin film. Thin film deposition: the silicon carbide in the decomposed gas product will deposit on the surface of the substrate and gradually form a thin film. The thickness and uniformity of the thin film can be adjusted by controlling the reaction conditions and the supply rate of the precursor. Stabilization and cooling: after the deposition of the silicon carbide thin film is completed, the specific reaction conditions are maintained to stabilize and cool the thin film, and finally the reaction chamber is closed. By using the silicon carbide deposition processing equipment using hot CVD method, high-quality, uniformly thick silicon carbide thin films can be achieved on the surface of the substrate. These thin films have wide applications in the fields of semiconductors, optoelectronics, ceramics, etc., such as the preparation of high-temperature electronic devices, optical coatings, and corrosion-resistant coatings, etc.

[0004] Among them, through retrieval, the patent application number CN202223070775.5 discloses a silicon carbide deposition processing equipment using hot CVD method, which comprises a furnace body, a workpiece supporting plate is arranged in the furnace body, guide sliding grooves are formed on the upper surfaces of the left and right sides of the workpiece supporting plate, top tightening springs are slidably arranged in the guide sliding grooves, sliding blocks are arranged on one side of the top tightening springs, push blocks are arranged on the upper sides of the mutually close ends of the two sliding blocks, drive roller assemblies for driving the workpiece to rotate are arranged on one side of the two sliding blocks, auxiliary rollers matched with the drive roller assemblies are uniformly arranged on the front and rear sides of the upper surface of the workpiece supporting plate, a gas supply assembly for injecting gas into the box furnace is arranged at the upper end of the furnace body;

[0005] The structure, in use, avoids the surface of the tubular base body from having contact points with the supporting device that cannot effectively deposit to the silicon carbide coating by rotating movement of the tubular base body, but the silicon carbide in the gas product cannot gather on the base during the process of depositing the silicon carbide on the base surface to form a thin film, which also causes poor efficiency and effect during the deposition. SUMMARY

[0006] In order to overcome the above-mentioned defects of the prior art, the present application provides a silicon carbide deposition processing equipment using a thermal CVD method, which aims to solve the problems raised in the above background.

[0007] In order to achieve the above-mentioned purpose, the present application provides the following technical scheme: a silicon carbide deposition processing equipment using a thermal CVD method, comprising a deposition processing chamber, wherein an agglomeration deposition assembly is arranged inside the deposition processing chamber.

[0008] The agglomeration deposition assembly comprises:

[0009] A sliding table for supporting is arranged at the bottom of the supporting frame, and the sliding table is in sliding connection with the deposition processing chamber.

[0010] An air inlet pipe for air inlet is arranged at the top of the deposition processing chamber and is in communication with the deposition processing chamber.

[0011] Two sliding rails for guiding are arranged at the top of the inner wall of the deposition processing chamber on both sides.

[0012] Two sliding blocks for guiding are arranged on the corresponding sliding rails and are in sliding connection with the sliding rails, and the sliding blocks are detachably connected with the supporting frame by bolts.

[0013] A cabinet door that can be opened is arranged on one side of the surface of the deposition processing chamber.

[0014] As can be seen, in the above technical scheme, pulling the sliding table to displace enables each structure on the supporting frame to be pulled out of the deposition processing chamber, the material is placed on the rotating disc, the outer side of the material is fixed by each limiting seat to ensure the stability of the material during placement, and the material is also convenient to store and take out.

[0015] A supporting frame for supporting is arranged at the bottom of the inner cavity of the deposition processing chamber.

[0016] A deflection frame that can rotate is arranged at the top of the inner cavity of the supporting frame.

[0017] A rotating disc for material placement that can rotate is arranged at the top of the deflection frame.

[0018] A plurality of limiting seats for limiting materials, and each limiting seat is distributed on the rotating disc along the axis point of the rotating disc and is in sliding connection with the rotating disc;

[0019] Two bearing seats for supporting, and each bearing seat is arranged on the top of the supporting frame on both sides;

[0020] A rotating shaft, which is arranged on the bearing seat and is in movable connection with the bearing seat;

[0021] A first motor for driving, which is arranged on one side of one of the two bearing seats, and the output end of the first motor penetrates the bearing seat and extends to the rotating shaft and is detachably connected with the rotating shaft;

[0022] A hollow rod for limiting, which is arranged on the supporting frame and is in movable connection with the supporting frame through the shaft pin;

[0023] A telescopic traction rod, which is arranged in the hollow rod and is in sliding connection with the hollow rod;

[0024] A baffle for lifting, which is arranged on the top of the deflection frame and is detachably connected with the rotating shaft and the deflection frame through bolts;

[0025] One end of the traction rod extends to the rotating shaft and is detachably connected with the rotating shaft;

[0026] As can be seen, in the above technical solution, the first motor is started to drive the rotating shaft to rotate, and the baffle and the deflection frame are rotated along the axis point at the connection between the rotating shaft and the bearing seat when the rotating shaft rotates, so as to adjust the angle of the material during deposition. During the adjustment process, the traction rod is pulled out of the hollow rod due to the traction force of the deflection frame during rotation, so as to pull the angle of the deflection frame during adjustment, thereby improving the stability of the deflection frame during adjustment;

[0027] A supporting frame is arranged on the inner cavity of the deposition processing chamber;

[0028] A limiting plate for supporting is arranged on the bottom of the supporting frame and is detachably connected with the deposition processing chamber;

[0029] A second motor for driving is arranged on the limiting plate and is detachably connected with the limiting plate;

[0030] A rotating screw is arranged on the output end of the second motor and is bolted with the supporting frame;

[0031] A spraying plate that can be displaced up and down is arranged on the bottom of the limiting plate;

[0032] A plurality of first extension pieces for limiting, and each of the first extension pieces is arranged at the outer four corners of the limiting plate;

[0033] A plurality of second extension pieces for limiting, and each of the second extension pieces is arranged at the outer four corners of the spraying plate;

[0034] Each of the corresponding first extension piece and the second extension piece is arranged vertically, and each of the first extension piece and the second extension piece is provided with a sliding groove;

[0035] A plurality of sliding plate pieces for traction, and each of the sliding plate pieces is arranged on the corresponding first extension piece and the second extension piece and is in sliding connection with the sliding groove thereof;

[0036] A plurality of baffle plates for flow guiding, and each of the baffle plates is arranged at the bottom of the corresponding sliding plate piece;

[0037] Two L-shaped L tubes for flow guiding, and each of the L tubes is arranged at the two sides of the spraying plate, and the top of each of the two L tubes penetrates the supporting frame and extends to the top of the supporting frame;

[0038] Two reinforcing tubes for flow guiding, and each of the reinforcing tubes is arranged at one end of the bottom of the corresponding L tube;

[0039] Each of the L tube, the reinforcing tube and the spraying plate is in communication;

[0040] A center disc for supporting, which is arranged between the limiting plate and the spraying plate;

[0041] A plurality of inclined seats for limiting, and each of the inclined seats is circumferentially distributed on one side of the corresponding sliding plate piece along the axis point of the center disc and is in sliding connection with the sliding plate piece;

[0042] A vertical shaft for guiding, which is arranged at the bottom of the spraying plate, and the top of the vertical shaft penetrates the spraying plate and extends to the bottom of the center disc;

[0043] A heater for heating, which is arranged at the bottom of the vertical shaft;

[0044] Each of the inclined seats is arranged upwardly along the axis point of the center disc;

[0045] It can be seen that, in the above technical scheme, the silicon carbide-containing gas can be guided through the hose, the L pipe and the reinforcing pipe, so that the silicon carbide-containing gas can be sprayed outward with the material as the center point, and the gas is heated from the inside to the outside by the heater while being sprayed, and the heating reaction is decomposed into gas and solid product, wherein the solid product is the required silicon carbide film, and the silicon carbide in the gas product after decomposition is deposited on the surface of the substrate and gradually forms a film, and the sliding block is guided to displace along the sliding rail, the L pipe is pulled to displace the spraying plate when the bracket is displaced, so that each second extension piece is displaced, so that each sliding plate piece can be pulled upward by the spraying plate, and the inclination angle of the inclined seat drives the baffle to gather or diffuse towards the axial point of the material, so that the silicon carbide containing the baffle is gathered on the outside of the material, and the deposition efficiency and effect are improved.

[0046] The reinforcing vertical seat for limiting is arranged at the bottom of the deflection frame and detachably connected with the deflection frame.

[0047] The third motor for driving is arranged on one side of the reinforcing vertical seat, and the third motor is mounted on the support frame and detachably connected with the support frame.

[0048] The rotatable reinforcing shaft vertical rod is arranged on the reinforcing vertical seat and movably connected with the reinforcing vertical seat, and the top end of the reinforcing shaft vertical rod penetrates the support frame and the baffle and extends to the bottom of the rotating disc and is detachably connected with the rotating disc.

[0049] The two rotatable belt pulleys are arranged on the outer side of the reinforcing shaft vertical rod and the output end of the third motor respectively, and the two belt pulleys are connected through a belt drive.

[0050] The limiting shaft ring seat for limiting is arranged on the outer side of the reinforcing shaft vertical rod at the top of the baffle, and the limiting shaft ring seat is detachably connected with the baffle.

[0051] It can be seen that, in the above technical scheme, the output end of the third motor drives the belt pulley to rotate first, and then drives the belt pulley on the reinforcing shaft vertical rod to rotate through the belt, so that the reinforcing shaft vertical rod can be rotated to drive the rotating disc to rotate, and the silicon carbide is easily and uniformly attached to the material.

[0052] The technical effects and advantages of the present application are as follows:

[0053] 1. The present invention fixes the outside of the material through various limit seats to ensure the stability of the material when it is placed, and also facilitates the storage and retrieval of the material. At the same time, when the rotating shaft rotates, the baffle and the deflection frame are driven to rotate along the axis point of the connection between the rotating shaft and the bearing seat, so as to adjust the angle of the material during deposition. The traction rod is pulled out from the hollow rod due to the traction force when the deflection frame rotates, pulling the angle of the deflection frame when it is adjusted, thereby improving the stability of the deflection frame during adjustment.

[0054] 2. During the deposition process, the present invention connects the hose and the L-tube together, so that the gas containing silicon carbide can be guided through the hose, the L-tube, and the reinforcement tube, so that the gas containing silicon carbide can be ejected outward with the material as the center point. While ejecting, the gas is heated from the inside out by the heater, and the heating reaction is brought to an appropriate temperature to decompose into gas and solid products, wherein the solid product is the desired silicon carbide film. The silicon carbide in the decomposed gas product will be deposited on the surface of the substrate and gradually form a film.

[0055] 3. The present invention uses the sliding block to move along the guide of the slide rail. When the support frame moves, the L-tube pulls the spray plate to move, thereby causing each second extension member to move. When the spray plate moves upward, the traction force of each slide plate can drive the baffle plate to gather or spread toward the axis of the material through the inclination angle of the inclined seat, so that silicon carbide is gathered on the outside of the material through the baffle plate, thereby improving the deposition efficiency and effect.

[0056] To sum up, the overall design is simple and the structure is reasonable. Through the corresponding coordination of various structures, the gas can be guided through the hose, L-tube and reinforcement tube, so that the gas containing silicon carbide can be ejected outward with the material as the center point. At the same time, the gas is heated from the inside out through the heater. The slide plate can drive the baffle plate to gather or diffuse toward the axis point of the material through the traction force when the spray plate moves upward and the inclination angle of the inclined seat, so that the silicon carbide is gathered on the outside of the material through the baffle, thereby improving the deposition efficiency and effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] To more clearly illustrate the technical solutions of the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, and the like involved in the embodiments of the present disclosure.

[0058] Figure 1 It is a schematic diagram of the overall structure of the present invention.

[0059] Figure 2 The side view of the gathering deposition assembly of the present application.

[0060] Figure 3 The front view of each structure on the bracket and the center disc of the present application.

[0061] Figure 4 The front view of each structure on the bracket of the present application.

[0062] Figure 5 The schematic view of each structure on the center disc of the present application installed on the limiting plate.

[0063] Figure 6 The schematic view of the rotating disc of the present application installed on the support frame.

[0064] Figure 7 The front view of each structure on the support frame of the present application.

[0065] Figure 8 The front view of each structure on the reinforcing vertical seat of the present application.

[0066] The reference signs are as follows: 1, deposition processing chamber; 101, sliding table; 102, air inlet pipe; 103, sliding rail; 104, sliding block; 105, cabinet door;

[0067] 2, support frame; 201, deflection frame; 202, rotating disc; 203, limiting seat; 204, bearing seat; 205, rotating shaft; 206, first motor; 207, hollow rod; 208, traction rod; 209, baffle;

[0068] 3, bracket; 301, limiting plate; 302, second motor; 303, screw rod; 304, spraying plate; 305, first extension piece; 306, second extension piece; 307, sliding plate piece; 308, baffle plate; 309, L-shaped pipe; 310, reinforcing pipe;

[0069] 4, center disc; 401, inclined seat; 402, vertical shaft; 403, heater;

[0070] 5, reinforcing vertical seat; 501, third motor; 502, reinforcing shaft vertical rod; 503, belt pulley; 504, belt; 505, limiting shaft ring seat. DETAILED DESCRIPTION

[0071] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the present application.

[0072] The terms "first", "second", "third", etc. in the embodiments of the present application are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second", "third" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise explicitly specified. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units is not limited to the listed steps or units, but can optionally include steps or units not listed, or can optionally include other steps or units inherent to the process, method, product or device.

[0073] Reference herein to "embodiments" means that the particular features, structures, or characteristics described in connection with the embodiments can be included in at least one embodiment of the present application. The appearance of the phrase in various places in the specification does not necessarily all refer to the same embodiment, nor does it necessarily refer to a separate or alternative embodiment in isolation from other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0074] As shown in the accompanying drawings Figures 1-8 A silicon carbide deposition processing device using a thermal CVD method, through the converging deposition assembly provided on the deposition processing chamber 1, through the hose and the L tube 309 and the reinforcing tube 310 for flow guiding, so that the gas containing silicon carbide can be sprayed outward with the material as the center point, and at the same time, the gas is heated from the inside to the outside by the heater 403, and the sliding plate 307 can be pulled by the inclination angle of the inclined seat 401 to drive the flow baffle 308 to converge or diffuse towards the material axis point when the sliding plate 307 is upwardly displaced by the traction of the spraying plate 304, so that the silicon carbide containing gas is blocked by the flow baffle 308 and converged on the outside of the material, to improve the deposition efficiency and effect, and the specific structure of the assembly is set as follows;

[0075] The converging deposition assembly comprises;

[0076] A sliding table 101 for supporting, the sliding table 101 is arranged at the bottom of the support frame 2, and the sliding table 101 is in sliding connection with the deposition processing chamber 1;

[0077] An air inlet pipe 102 for air inlet, the air inlet pipe 102 is arranged at the top of the deposition processing chamber 1 and communicates with the deposition processing chamber 1;

[0078] Two sliding rails 103 for guiding, and each sliding rail 103 is arranged at the top of the inner wall of the deposition processing chamber 1 on both sides;

[0079] Two sliders 104 for guiding, and each slider 104 is arranged on the corresponding slide rail 103 and is in sliding connection with the slide rail 103, and the slider 104 is in detachable connection with the support frame 3 through bolts;

[0080] A cabinet door 105 which can be opened, and the cabinet door 105 is arranged on the surface side of the deposition processing chamber 1;

[0081] A support frame 2 for supporting, and the support frame 2 is arranged at the bottom of the inner cavity of the deposition processing chamber 1;

[0082] A deflection frame 201 which can be rotated, and the deflection frame 201 is arranged at the top of the inner cavity of the support frame 2;

[0083] A rotating turntable 202 for placing materials, and the rotating turntable 202 is arranged at the top of the deflection frame 201;

[0084] A plurality of limiting seats 203 for limiting materials, and each limiting seat 203 is distributed on the rotating turntable 202 along the circumferential point of the axis of the rotating turntable 202 and is in sliding connection with the rotating turntable 202;

[0085] Two bearing seats 204 for supporting, and each bearing seat 204 is arranged on the top of the support frame 2 on both sides;

[0086] A rotating shaft 205 which can be rotated, and the rotating shaft 205 is arranged on the bearing seat 204 and is in movable connection with the bearing seat 204;

[0087] A first motor 206 for driving, and the first motor 206 is arranged on one side of one of the two bearing seats 204, and the output end of the first motor 206 penetrates the bearing seat 204 and extends to the rotating shaft 205 and is in detachable connection with the rotating shaft 205;

[0088] A hollow rod 207 for limiting, and the hollow rod 207 is arranged on the support frame 2 and is in movable connection with the support frame 2 through a shaft pin;

[0089] A traction rod 208 which can be telescopic, and the traction rod 208 is arranged in the hollow rod 207 and is in sliding connection with the hollow rod 207;

[0090] A baffle 209 for lifting, and the baffle 209 is arranged on the top of the deflection frame 201, and the baffle 209 is in detachable connection with the rotating shaft 205 and the deflection frame 201 through bolts;

[0091] One end of the traction rod 208 extends to the rotating shaft 205 and is in detachable connection with the rotating shaft 205;

[0092] A support frame 3 for supporting, and the support frame 3 is arranged at the top of the inner cavity of the deposition processing chamber 1;

[0093] A limiting plate 301 for supporting is arranged at the bottom of the frame 3 and detachably connected with the deposition processing chamber 1;

[0094] A second motor 302 for driving is arranged on the limiting plate 301 and detachably connected with the limiting plate 301;

[0095] A screw rod 303 rotatable is arranged at the output end of the second motor 302, and the screw rod 303 is bolted with the frame 3;

[0096] A spraying plate 304 displaceable up and down is arranged at the bottom of the limiting plate 301;

[0097] A plurality of first extension pieces 305 for limiting are arranged at the outer four corners of the limiting plate 301 respectively;

[0098] A plurality of second extension pieces 306 for limiting are arranged at the outer four corners of the spraying plate 304 respectively;

[0099] Each corresponding first extension piece 305 and second extension piece 306 is arranged perpendicularly, and each first extension piece 305 and second extension piece 306 is provided with a sliding groove;

[0100] A plurality of sliding plate pieces 307 for traction are arranged on each corresponding first extension piece 305 and second extension piece 306 and slidably connected with the sliding groove thereof;

[0101] A plurality of baffle plates 308 for flow guiding are arranged at the bottom of each corresponding sliding plate piece 307;

[0102] Two L-shaped L-tubes 309 for flow guiding are arranged at both sides of the spraying plate 304, and the top of each L-tube 309 penetrates through the frame 3 and extends to the top of the frame 3;

[0103] Two reinforcing tubes 310 for flow guiding are arranged at one end of the bottom of each corresponding L-tube 309;

[0104] Each L-tube 309, reinforcing tube 310 and spraying plate 304 are in communication;

[0105] A center disc 4 for supporting is arranged between the limiting plate 301 and the spraying plate 304;

[0106] A plurality of inclined seats 401 for limiting are arranged on one side of each corresponding sliding plate piece 307 along the axis point of the center disc 4 and slidably connected with the sliding plate piece 307;

[0107] A vertical shaft 402 for guiding, the vertical shaft 402 is arranged at the bottom of the spraying plate 304, and the top of the vertical shaft 402 passes through the spraying plate 304 and extends to the bottom of the center disk 4;

[0108] A heater 403 for heating, the heater 403 is arranged at the bottom of the vertical shaft 402;

[0109] Among them, each inclined seat 401 is arranged to be inclined upward along the axis point of the central disk 4;

[0110] A reinforcing stand 5 for limiting position, the reinforcing stand 5 is arranged at the bottom of the deflection frame 201 and is detachably connected to the deflection frame 201;

[0111] A third motor 501 for driving, the third motor 501 is arranged on one side of the reinforced stand 5, and the third motor 501 is mounted on the support frame 2 and is detachably connected to the support frame 2;

[0112] A rotatable reinforcing shaft vertical rod 502 is disposed on the reinforcing stand 5 and is movably connected to the reinforcing stand 5. The top end of the reinforcing shaft vertical rod 502 passes through the support frame 2 and the baffle 209 and extends to the bottom of the turntable 202 and is detachably connected to the turntable 202.

[0113] Two rotatable pulleys 503, each pulley 503 is respectively arranged on the outside of the reinforcing shaft vertical rod 502 and the output end of the third motor 501, and the two pulleys 503 are connected by a belt 504;

[0114] The limiting shaft ring seat 505 is used for limiting the position. The limiting shaft ring seat 505 is arranged on the outer side of the reinforcing shaft vertical rod 502 located at the top of the baffle 209. The limiting shaft ring seat 505 is detachably connected to the baffle 209.

[0115] According to the above structure, when in use, the staff installs the device at a designated position. When depositing materials, the staff opens the cabinet door 105 and pulls the slide 101 to move so that the various structures on the support frame 2 can be pulled out of the deposition processing chamber 1. The materials are placed on the turntable 202. The outer side of the materials is fixed by the various limit seats 203 to ensure the stability of the materials when placed and facilitate the storage and retrieval of the materials.

[0116] The gas containing silicon carbide is injected into the deposition processing chamber 1 through the gas inlet pipe 102. When the gas is introduced into the deposition processing chamber 1, the gas containing silicon carbide is guided through the hose and the L-shaped pipe 309, so that the gas containing silicon carbide can be sprayed outward with the material as the center point. At the same time, the heater 403 is used to heat the gas from the inside to the outside, and the gas is decomposed into gas and solid products at a suitable temperature. The solid product is the required silicon carbide film. The silicon carbide in the decomposed gas product is deposited on the surface of the substrate and gradually forms a film.

[0117] During the decomposition and deposition process, the second motor 302 is started to drive the lead screw 303 to rotate. When the lead screw 303 rotates, the support frame 3 is displaced along the guide rail 103 through the sliding block 104. When the support frame 3 is displaced, the L-shaped pipe 309 pulls the spraying plate 304 to displace, so that each second extension piece 306 is displaced, and each sliding plate piece 307 can be displaced upward by the traction force of the spraying plate 304. The inclination angle of the inclined seat 401 drives the baffle plate 308 to gather or diffuse towards the axial center point of the material, so that the silicon carbide containing gas is gathered on the outside of the material through the blocking of the baffle plate 308, thereby improving the deposition efficiency and effect.

[0118] At the same time, the third motor 501 is started. The output end of the third motor 501 drives the belt pulley 503 to rotate first, and then drives the belt pulley 503 on the reinforcing shaft vertical rod 502 to rotate through the belt 504, so that the reinforcing shaft vertical rod 502 can rotate to drive the turntable 202 to rotate, which is easy for the silicon carbide to be uniformly attached to the material. The first motor 206 can also be started to drive the rotating shaft 205 to rotate. When the rotating shaft 205 rotates, the baffle 209 and the deflection frame 201 rotate along the axial center point of the connection between the rotating shaft 205 and the bearing seat 204, thereby adjusting the angle of the material during deposition. During the adjustment process, the traction rod 208 is pulled out of the hollow rod 207 due to the traction force of the deflection frame 201 during rotation, thereby pulling the angle of the deflection frame 201 during adjustment, and improving the stability of the deflection frame 201 during adjustment.

[0119] Different from the prior art, the application discloses a silicon carbide deposition processing equipment using a hot CVD method. The gas containing silicon carbide is guided through the hose and the L-shaped pipe 309 and the reinforcing pipe 310, so that the gas containing silicon carbide can be sprayed outward with the material as the center point. At the same time, the heater 403 is used to heat the gas from the inside to the outside. The sliding plate piece 307 can be displaced upward by the traction force of the spraying plate 304. The inclination angle of the inclined seat 401 drives the baffle plate 308 to gather or diffuse towards the axial center point of the material, so that the silicon carbide containing gas is gathered on the outside of the material through the blocking of the baffle plate 308, thereby improving the deposition efficiency and effect.

[0120] The above merely provides the preferred embodiments of the application, and is not intended to limit the application. Any modification, equivalent replacement, improvement, and the like made within the spirit and principle of the application shall fall within the protection scope of the application.

Claims

1. A silicon carbide deposition processing apparatus using a thermal CVD method, comprising a deposition processing chamber (1), characterized by: The deposition processing chamber (1) is provided with a converging deposition assembly; The converging deposition assembly comprises; A support frame (2) for supporting, which is arranged at the bottom of the inner cavity of the deposition processing chamber (1); A deflecting frame (201) which can rotate, arranged at the top of the inner cavity of the support frame (2); A rotating turntable (202) for placing materials, arranged at the top of the deflecting frame (201); A plurality of limiting seats (203) for limiting materials, each of which is circumferentially distributed on the turntable (202) along the axial point of the turntable (202) and is in sliding connection with the turntable (202); A supporting frame (3), arranged at the top of the inner cavity of the deposition processing chamber (1); A limiting plate (301) for supporting, arranged at the bottom of the supporting frame (3) and in detachable connection with the deposition processing chamber (1); A second motor (302) for driving, arranged on the limiting plate (301) and in detachable connection with the limiting plate (301); A screw rod (303) which can rotate, arranged at the output end of the second motor (302), and in bolt connection with the supporting frame (3); A spraying plate (304) which can be displaced up and down, arranged at the bottom of the limiting plate (301); The converging deposition assembly further comprises; A plurality of first extension pieces (305) for limiting, each of which is arranged at the outer four corners of the limiting plate (301); A plurality of second extension pieces (306) for limiting, each of which is arranged at the outer four corners of the spraying plate (304); Each corresponding first extension piece (305) and second extension piece (306) is arranged perpendicularly, and each of the first extension pieces (305) and second extension pieces (306) is provided with a sliding groove; A plurality of sliding plate pieces (307) for traction, each of which is arranged on the corresponding first extension piece (305) and second extension piece (306) and in sliding connection with the sliding groove thereof; The converging deposition assembly further comprises; A plurality of baffle plates (308) for flow guiding, each of which is arranged at the bottom of the corresponding sliding plate piece (307); Two L-shaped L-tubes (309) for flow guiding, each of which is arranged at the two sides of the spraying plate (304), and the top of each of the two L-tubes (309) penetrates through the supporting frame (3) and extends to the top of the supporting frame (3); Two reinforcing tubes (310) for flow guiding, each of which is arranged at one end of the bottom of the corresponding L-tube (309); Each of the L-tubes (309), reinforcing tubes (310) and spraying plate (304) is in communication; The converging deposition assembly further comprises; A center disc (4) for supporting is arranged between the limiting plate (301) and the spraying plate (304); A plurality of inclined seats (401) for limiting are circumferentially arranged on one side of the sliding plate (307) along the axis of the center disc (4) and are in sliding connection with the sliding plate (307); A vertical shaft (402) for guiding is arranged at the bottom of the spraying plate (304), the top of the vertical shaft (402) penetrates the spraying plate (304) and extends to the bottom of the center disc (4); A heater (403) for heating is arranged at the bottom of the vertical shaft (402); Each inclined seat (401) is arranged upwardly along the axis of the center disc (4).

2. The apparatus for a silicon carbide deposition process by a thermal CVD method according to claim 1, wherein: The converging deposition assembly further comprises: A sliding table (101) for supporting is arranged at the bottom of the support frame (2) and is in sliding connection with the deposition treatment chamber (1); An air inlet pipe (102) for air inlet is arranged at the top of the deposition treatment chamber (1) and is in communication with the deposition treatment chamber (1); Two sliding rails (103) for guiding are arranged at the top of the inner wall of the deposition treatment chamber (1) on both sides; Two sliding blocks (104) for guiding are arranged on the corresponding sliding rails (103) and are in sliding connection with the sliding rails (103), and the sliding blocks (104) are detachably connected with the supporting frame (3) through bolts; A cabinet door (105) which can be opened is arranged on one side of the surface of the deposition treatment chamber (1).

3. The apparatus for a silicon carbide deposition process by a thermal CVD method according to claim 1, wherein: The converging deposition assembly further comprises: Two bearing seats (204) for supporting are arranged at the top of the support frame (2) on both sides; A rotating shaft (205) which can be rotated is arranged on the bearing seat (204) and is movably connected with the bearing seat (204); A first motor (206) for driving is arranged on one side of one of the two bearing seats (204), and the output end of the first motor (206) penetrates the bearing seat (204) and extends to the rotating shaft (205) and is detachably connected with the rotating shaft (205).

4. The apparatus for a silicon carbide deposition process by a thermal CVD method according to claim 2, wherein: The converging deposition assembly further comprises: A hollow rod (207) for limiting is arranged on the support frame (2) and is movably connected with the support frame (2) through an axle pin; A traction rod (208) which can be telescopic is arranged in the hollow rod (207) and is in sliding connection with the hollow rod (207); A baffle (209) for lifting is arranged at the top of the deflection frame (201), and the baffle (209) is detachably connected with the rotating shaft (205) and the deflection frame (201) through bolts; One end of the traction rod (208) extends to the rotating shaft (205) and is detachably connected with the rotating shaft (205).

5. The apparatus for a silicon carbide deposition process using a thermal CVD method according to claim 1, wherein: The converging deposition assembly further comprises; A reinforcing vertical seat (5) for limiting position, which is arranged at the bottom of the deflection frame (201) and detachably connected with the deflection frame (201); A third motor (501) for driving, which is arranged at one side of the reinforcing vertical seat (5), mounted on the support frame (2) and detachably connected with the support frame (2); A reinforcing shaft vertical rod (502) which can rotate, arranged on the reinforcing vertical seat (5) and movably connected with the reinforcing vertical seat (5), the top end of the reinforcing shaft vertical rod (502) penetrates through the support frame (2) and the baffle (209) and extends to the bottom of the rotating disc (202) and detachably connected with the rotating disc (202); Two belt pulleys (503) which can rotate, each of which is arranged at the outer side of the reinforcing shaft vertical rod (502) and the output end of the third motor (501), and the two belt pulleys (503) are drivingly connected through a belt (504); A limiting shaft ring seat (505) for limiting position, which is arranged at the outer side of the reinforcing shaft vertical rod (502) at the top of the baffle (209), and detachably connected with the baffle (209).

Images