Display substrate, preparation method thereof and display device

Abstract

This disclosure provides a display substrate and its fabrication method, as well as a display device. The display substrate includes a substrate, a pixel defining layer, and a plurality of light-emitting devices located on the substrate. The pixel defining layer includes a plurality of pixel openings. Each light-emitting device includes a first electrode, an organic light-emitting functional layer, and a second electrode stacked thereon. The organic light-emitting functional layer covers the pixel openings and extends to the spacing region between adjacent light-emitting devices. At least a portion of the first electrode is exposed at the lower port of the pixel opening, and a protrusion structure surrounding the pixel opening is disposed around the upper port of the pixel opening. The protrusion structure is located between the pixel opening and the aforementioned spacing region, and the protrusion structure is made of an insulating material. The protrusion structure is configured to block the leakage path from the first electrode exposed by the pixel opening to the aforementioned spacing region.

Description

Technical Field

[0001] This disclosure relates to the field of display technology, and in particular to a display substrate, a method for preparing the same, and a display device. Background Technology

[0002] Micro-OLED (Micro Organic Light-Emitting Diode) microdisplay devices are widely used in display products due to their self-emissive nature, thinness, light weight, wide viewing angle, short response time, high luminous efficiency, easier achievement of high PPI (pixel density), and low power consumption. However, Micro-OLED microdisplay devices still have some problems affecting display quality, such as crosstalk between pixels. Summary of the Invention

[0003] In a first aspect, some embodiments of this disclosure provide a display substrate, comprising: a substrate; a pixel defining layer located on the substrate, the pixel defining layer including a plurality of pixel openings; a plurality of light-emitting devices, each light-emitting device being located at one of the pixel openings, each light-emitting device including a first electrode, an organic light-emitting functional layer, and a second electrode stacked thereon, the first electrode being spaced apart in a spacing region between adjacent light-emitting devices, the organic light-emitting functional layer covering the pixel opening and extending to the spacing region; wherein, at least a portion of the first electrode is exposed at the lower port of the pixel opening, and a protrusion structure surrounding the pixel opening is disposed around the upper port of the pixel opening, the protrusion structure being located between the pixel opening and the spacing region, the material of the protrusion structure being an insulating material, the protrusion structure being configured to block the leakage path from the first electrode exposed by the pixel opening to the spacing region.

[0004] Optionally, the protrusion structure is formed by polymer deposition during the etching of the pixel opening using a dry etching process, and the material composition of the protrusion structure includes at least the composition of the reactive gas in the dry etching process and the composition of the photoresist material used in the dry etching process.

[0005] Optionally, the pixel defining layer includes a plurality of stacked inorganic film layers, the pixel opening penetrates the plurality of stacked inorganic film layers, and the material composition of the protrusion structure further includes: the material composition of the top film layer of the pixel defining layer, wherein the top film layer is the film layer in the pixel defining layer that is farthest from the substrate.

[0006] Optionally, the pixel defining layer includes: a first inorganic film layer, a second inorganic film layer, and a third inorganic film layer sequentially disposed along a direction away from the substrate, wherein the third inorganic film layer is the top film layer, and the pixel opening penetrates the first inorganic film layer, the second inorganic film layer, and the third inorganic film layer; the third inorganic film layer is a silicon oxide layer, and the material composition of the protrusion structure includes: carbon, fluorine, oxygen, and silicon.

[0007] Optionally, along a direction perpendicular to the substrate, the thickness ratio of the protrusion structure to the top layer film is between one-ninth and one-third.

[0008] Optionally, the thickness of the protrusion structure is between 100 and 300 angstroms along a direction perpendicular to the substrate.

[0009] Optionally, the orthographic projection of the protrusion structure onto the substrate is a closed ring, and the ring width of the closed ring is between 10 and 30 nm.

[0010] Optionally, the orthographic projection of the protrusion structure onto the substrate is a closed ring, and the ratio of the ring width to the spacing width between adjacent light-emitting devices is between one-fiftieth and one-two-hundredth. 。

[0011] Optionally, the distance between the protrusion structure and the surrounding pixel opening is 10–30 nm.

[0012] Secondly, some embodiments of this disclosure provide a display substrate, including: a substrate; a pixel defining layer located on the substrate, the pixel defining layer including a plurality of pixel openings; a plurality of light-emitting devices, each light-emitting device located at one of the pixel openings, each light-emitting device including a first electrode, an organic light-emitting functional layer and a second electrode stacked thereon, the first electrode being spaced apart in a spacing region between adjacent light-emitting devices, the organic light-emitting functional layer covering the pixel opening and extending to the spacing region; wherein, at least a portion of the first electrode is exposed at the lower port of the pixel opening, and a protrusion structure surrounding the pixel opening is disposed around the upper port of the pixel opening, the protrusion structure being formed by the accumulation of an insulating polymer generated during the etching of the pixel opening, the protrusion structure being configured to block the leakage path from the first electrode exposed by the pixel opening to the spacing region.

[0013] Thirdly, some embodiments of this disclosure provide a display device, including a display substrate provided in some embodiments of this disclosure.

[0014] Fourthly, some embodiments of this disclosure provide a method for fabricating a display substrate, the method comprising: providing a substrate; forming first electrodes of a plurality of light-emitting devices on the substrate, the first electrodes being spaced apart in intervals between adjacent light-emitting devices; forming a pixel defining layer on the first electrodes, the pixel defining layer having a plurality of pixel openings, each pixel opening corresponding to one light-emitting device, at least a portion of the first electrode of the corresponding light-emitting device being exposed at the lower port of the pixel opening, and a protrusion structure surrounding the pixel opening being disposed around the upper port of the pixel opening, the protrusion structure being made of an insulating material; forming an organic light-emitting functional layer of the plurality of light-emitting devices on the pixel defining layer, the organic light-emitting functional layer covering the pixel openings and extending to the intervals, the protrusion structure being configured to block leakage current paths from the first electrodes exposed by the pixel openings to the intervals; and forming second electrodes of the plurality of light-emitting devices on the organic light-emitting functional layer.

[0015] Optionally, a pixel defining layer is formed on the first electrode, comprising:

[0016] A transition film layer of the pixel defining layer is formed on the first electrode;

[0017] The transition film layer is etched using a plasma etching process to form the plurality of pixel openings, and the insulating polymer generated during the etching process accumulates around the upper port of the pixel openings to form the protrusion structure.

[0018] Optionally, the transition film layer includes: a first silicon oxide film, a silicon nitride film, and a second silicon oxide film stacked in a direction away from the substrate. The insulating polymer generated during the etching process accumulates around the upper port of the pixel opening to form the protrusion structure, including: the insulating polymer generated during the etching of the second silicon oxide film accumulates around the upper port of the pixel opening to form the protrusion structure.

[0019] Optionally, before etching the transition film layer using a plasma etching process to form the plurality of pixel openings, the method further includes: forming a patterned photoresist material layer on the transition film layer. Etching the transition film layer using a plasma etching process to form the plurality of pixel openings and the protrusion structure includes: etching the area not obscured by the photoresist material layer using a plasma etching process to form the plurality of pixel openings and an insulating polymer deposited around the upper port of the pixel openings; removing the photoresist material layer, whereby, under the shrinkage stress generated by removing the photoresist material layer, the deposited insulating polymer moves away from the pixel openings to obtain the protrusion structure, wherein the moving distance is between 10 and 30 nm.

[0020] In at least one embodiment of the display substrate and its preparation method and display device provided in this disclosure, by providing an insulating protrusion structure surrounding the pixel opening at the upper port periphery, the protrusion structure is located between the pixel opening and the spacing region of the adjacent light-emitting device, which can effectively block the leakage path from the first electrode exposed at the pixel opening to the pixel spacing region, thereby helping to reduce light crosstalk interference between pixels and improve the display effect.

[0021] The above description is merely an overview of the technical solutions provided by the embodiments of this disclosure. In order to better understand the technical means of the embodiments of this disclosure and to implement them in accordance with the contents of the specification, and to make the above and other objects, features and advantages of the embodiments of this disclosure more apparent and understandable, specific implementation methods of the embodiments of this disclosure are described below. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0023] Figure 1 The following diagram illustrates the leakage path of a display substrate according to some embodiments of the present disclosure;

[0024] Figure 2 A cross-sectional schematic diagram of a display substrate according to some embodiments of the present disclosure is shown;

[0025] Figure 3 A schematic diagram of the pixel arrangement of a display substrate according to some embodiments of the present disclosure is shown;

[0026] Figure 4 A plan view of the protrusion structure according to some embodiments of the present disclosure is shown;

[0027] Figure 5 Schematic diagrams of the structure of light-emitting devices according to some embodiments of the present disclosure are shown;

[0028] Figure 6 Planar micrographs of pixel openings according to some embodiments of the present disclosure are shown;

[0029] Figure 7 Cross-sectional micrographs of pixel openings in some embodiments of this disclosure are shown;

[0030] Figure 8 A flowchart illustrating a method for fabricating a display substrate according to some embodiments of the present disclosure is shown;

[0031] Figure 9A schematic diagram is shown after forming a patterned photoresist layer according to some embodiments of the present disclosure;

[0032] Figure 10 A schematic diagram of dry etching following some embodiments of this disclosure is shown;

[0033] Figure 11 Schematic diagrams of some embodiments of this disclosure after photoresist removal are shown;

[0034] Figure 12 A schematic diagram of a display device according to some embodiments of the present disclosure is shown. Detailed Implementation

[0035] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0036] It should be noted that the term "multiple" in this article includes two or more cases. Words such as "including" or "contains" mean that the element or object preceding the word covers the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Terms such as "up," "down," "left," and "right" are only used to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0037] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can mean that the layer or element is directly on the other layer or substrate, or that there is an intermediate layer between the layer or element and the other layer or substrate.

[0038] Micro-OLED (micro-organic light-emitting diode) microdisplay devices are widely used in display products, such as wearable displays like VR (Virtual Reality) and AR (Augmented Reality) devices. However, the inventors discovered during actual production that Micro-OLED microdisplay devices suffer from crosstalk interference between pixels, affecting display quality. Therefore, it is necessary to specifically address this crosstalk interference problem to improve display performance.

[0039] For example, Figure 1 The diagram illustrates leakage current path diagrams for display substrates according to some embodiments of this disclosure. For example... Figure 1As shown, the inventors' analysis revealed that one of the reasons for the aforementioned color crosstalk interference problem is that the first electrode AN (e.g., the anode) in the display substrate 01 is patterned, and the ideal current path is perpendicular to the direction of the organic light-emitting functional layer EL covering the pixel opening PL. However, in practical applications, the distance d1 between the pixel opening PL and the spacing region between pixels in Micro-OLED microdisplay devices is relatively close; for example, the distance d1 can be as low as the micrometer (μm) level. Therefore, after the first electrode AN is energized, in the lateral direction, the spacing region between pixels is easily conductive due to leakage current from the first electrode AN, i.e., a leakage circuit is formed between the first electrode AN and this spacing region (e.g., ...). Figure 1 The leakage path R shown L This causes the organic light-emitting functional layer (EL) covering adjacent pixels to conduct light, resulting in color crosstalk between pixels and affecting the display effect.

[0040] For example, Figure 1 The diagram illustrates 10 exemplary light rays, designated L1-L10. L1, L2, L5, L6, L9, and L10 are normally emitted light rays from their respective pixel regions, while L3, L4, L7, and L8 are crosstalk light rays emitted due to the organic light-emitting functional layer in the pixel spacing region emitting light caused by the aforementioned leakage current. Figure 1 As shown, L3 is emitted after passing through the red filter unit CF_R and the blue filter unit CF_B, L4 is emitted after passing through the blue filter unit CF_B and the red filter unit CF_R, L7 is emitted after passing through the green filter unit CF_G and the red filter unit CF_R, and L8 is emitted after passing through the red filter unit CF_R and the green filter unit CF_G. This causes color mixing between pixels, affecting the display effect.

[0041] Therefore, some embodiments of this disclosure provide a display substrate and its preparation method, as well as a display device. By providing an insulating protrusion structure surrounding the pixel opening at the upper port periphery, and the protrusion structure being located between the pixel opening and the spacing region of adjacent light-emitting devices, the leakage path from the first electrode exposed at the pixel opening to the pixel spacing region can be effectively blocked, which is beneficial to reducing light crosstalk interference between pixels and thus improving the display effect.

[0042] The display substrate provided in some embodiments of this disclosure will now be described in detail with reference to the accompanying drawings.

[0043] Figure 2 A cross-sectional schematic diagram of a display substrate according to some embodiments of this disclosure is shown. For example... Figure 2As shown, some embodiments of this disclosure provide a display substrate 10, which may include a substrate 100, a pixel defining layer 110 located on the substrate 100, and a plurality of light-emitting devices 120. The pixel defining layer 110 includes a plurality of pixel openings 114, and each light-emitting device 120 is located at one pixel opening 114. The light-emitting device 120 includes a first electrode 121, an organic light-emitting functional layer 122, and a second electrode 123 stacked together. The first electrode 121 is separated in the spacing region between adjacent light-emitting devices 120, and the organic light-emitting functional layer 122 covers the pixel openings 114 and extends to the spacing region between adjacent light-emitting devices 120. At least a portion of the first electrode 121 is exposed at the lower port of the pixel opening 114. A protrusion structure 130 surrounding the pixel opening 114 is provided around the upper port of the pixel opening 114. The protrusion structure 130 is located between the pixel opening 114 and the spacer region of the adjacent light-emitting device 120. The material of the protrusion structure 130 is an insulating material. The protrusion structure 130 is configured to block the leakage path from the first electrode 121 exposed at the pixel opening 114 to the aforementioned spacer region.

[0044] It should be noted that the lower port of the pixel opening 114 is the port relatively closer to the substrate 100, and the upper port of the pixel opening 114 is the port relatively farther away from the substrate 100. For example, as Figure 2 As shown, the edge line of the first electrode 121 can be used as a boundary line to define the area where each light-emitting device 120 is located, thereby defining the interval area between adjacent light-emitting devices 120. It should be noted that in other embodiments, the interval area between adjacent light-emitting devices 120 can also be defined in other ways. For example, the light-emitting area of ​​the light-emitting device 120 can also be defined by the pixel opening 114, and the area between adjacent pixel openings 114 can be used as the interval area between adjacent light-emitting devices 120. This embodiment does not limit this.

[0045] In such Figure 2 In the illustrated embodiment, by providing a protruding structure 130 surrounding the upper port of the pixel opening 114, and the material of the protruding structure 130 being an insulating material, leakage current paths from the first electrode 121 exposed at the pixel opening 114 to the spacing region of adjacent light-emitting devices 120 can be effectively blocked. This helps reduce the light emission risk of the organic light-emitting functional layer 122 in the pixel spacing region, reduces cross-color interference between pixels, and improves the display effect. For example, Figure 1 The leakage path R shown in the figure L Blocked by the protruding structure 130, it can effectively prevent the pixel spacing area from emitting light due to the leakage current of the first electrode 121 (e.g., Figure 1 The light rays (L3, L4, L7, and L8) shown in the diagram help to improve the problem of cross-color interference between pixels.

[0046] Figure 3 This diagram illustrates the pixel arrangement of a display substrate 10 according to some embodiments of the present disclosure. Figure 2 It can be Figure 3 A cross-sectional view along AA. For example, as... Figure 3 As shown, the display substrate 10 may include a plurality of repeating pixel units P, each pixel unit P including a plurality of sub-pixels, each sub-pixel emitting light of a different color. Each sub-pixel is provided with one of the aforementioned light-emitting devices 120. For example, each pixel unit P may include two green sub-pixels G, one red sub-pixel R, and one blue sub-pixel B, each sub-pixel corresponding to one light-emitting device 120 and one pixel opening 114. A raised structure 130 surrounds the pixel opening 114 corresponding to each sub-pixel. It should be noted that... Figure 3 The pixel arrangement and sub-pixel shape shown are for illustrative purposes only. Other arrangements may be used in other embodiments, and this embodiment does not limit them.

[0047] Figure 4 A plan view of a protrusion structure 130 according to some embodiments of the present disclosure is shown. Figure 4 by Figure 3 Taking a single pixel unit P as an example, KG represents the orthographic projection area of ​​the upper port of the pixel opening 114 corresponding to the green sub-pixel G on the substrate 100, KR represents the orthographic projection area of ​​the upper port of the pixel opening 114 corresponding to the red sub-pixel R on the substrate 100, and KB represents the orthographic projection area of ​​the upper port of the pixel opening 114 corresponding to the blue sub-pixel B on the substrate 100.

[0048] like Figure 4 As shown, in some embodiments, the orthographic projection 1301 of the protrusion structure 130 on the substrate 100 is a closed ring, that is, a leakage protection structure is formed at the upper edge of the pixel opening 114, which blocks the leakage path between the first electrode 121 and the spacing region of the adjacent light-emitting device 120, and prevents the organic light-emitting functional layer 122 covered by the pixel spacing region from conducting electricity and emitting light due to leakage current. It should be noted that... Figure 4 The shape of the closed ring shown is merely an example. The planar shape of the closed ring can be determined based on the orthographic projection shape of the upper port of the pixel opening 114 onto the substrate 100. For example, it can be a triangular ring, a rhomboid ring, a rectangular ring, a trapezoidal ring, a pentagonal ring, a regular hexagonal ring, a circular ring, or an elliptical ring, etc. It should also be noted that if the orthographic projection shape of the protrusion structure 130 onto the substrate 100 is a regular hexagonal ring, it means that the shape of the orthographic projection is approximately a regular hexagonal ring. For example, it can be a standard regular hexagonal ring, or it can be a quasi-regular hexagonal ring with chamfers, serrations, or rounded corners. This embodiment does not impose any limitations on this.

[0049] In some embodiments, the ratio (d2:D) of the closed loop width d2 to the spacing width D between adjacent light-emitting devices 120 can be between one-fiftieth and one-two-hundredth. For example, d2:D can be 1:50, 1:100, 1:150, or 1:200, etc. In some embodiments, the closed loop width d2 can be between 10 and 30 nm, for example, 10 nm, 15 nm, 20 nm, 25 nm, or 30 nm, in order to sufficiently isolate the leakage path.

[0050] In some embodiments, due to process limitations, the distance d3 between the protrusion structure 130 and the surrounding pixel opening 114 can be 10–30 nm, for example, 10 nm, 15 nm, 20 nm, 25 nm, or 30 nm. The closer the protrusion structure 130 is to the pixel opening 114, the better the protrusion structure 130 can increase the physical insulation height of the pixel defining layer 110, and the earlier it can block the leakage path from the first electrode 121 exposed at the pixel opening 114 to the gap between adjacent light-emitting devices 120. This helps to further reduce the emission of the organic light-emitting functional layer 122 between pixels, thereby reducing crosstalk interference between pixels. The farther the protrusion structure 130 is from the pixel opening 114, the weaker the leakage resistance blocking effect, and leakage current may jump over the protrusion structure 130 and continue to propagate.

[0051] For example, Figure 5 A schematic diagram of the structure of a light-emitting device 120 according to some embodiments of this disclosure is shown. For example... Figure 5 As shown, the light-emitting device 120 may include a first electrode 121, an organic light-emitting functional layer 122, and a second electrode 123 sequentially stacked along a direction away from the substrate 100. For example, the light-emitting device 120 may be an organic light-emitting diode, and the organic light-emitting functional layer 122 may include an organic light-emitting layer 210 and an organic functional layer.

[0052] In some embodiments of this disclosure, the organic light-emitting layer 210 can be divided into light-emitting layers of different colors, such as a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer. The structure of the organic light-emitting layer 210 is determined according to the emission color of the light-emitting device 120 in the actual application scenario, and this embodiment does not limit this. For example, the light-emitting device 120 can be a white light-emitting device. In this case, the organic light-emitting layer 210 can include a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer to form a composite white light. Of course, for a red light-emitting device 120, the organic light-emitting layer 210 can include a red light-emitting layer; for a green light-emitting device, the organic light-emitting layer 210 can include a green light-emitting layer; and for a blue light-emitting device, the organic light-emitting layer 210 can include a blue light-emitting region device.

[0053] In some embodiments, the organic functional layer may include one or more of the following films: a hole injection layer, a hole transport layer, an electron blocking layer, an electron injection layer, an electron transport layer, and a hole blocking layer.

[0054] In some embodiments of this disclosure, one of the first electrode 121 and the second electrode 123 is an anode, and the other is a cathode. For example, as... Figure 5 As shown, the first electrode 121 is the anode, and the second electrode 123 is the cathode. The organic functional layer may include: a hole injection layer 221 and a hole transport layer 222 located between the first electrode 121 and the organic light-emitting layer 210, and an electron transport layer 223 and an electron injection layer 224 located between the organic light-emitting layer 210 and the second electrode 123. It should be noted that... Figure 5 The structure shown is merely an example; in other examples, the organic functional layer may also contain more than... Figure 5 More or fewer film layers are not limited in this embodiment.

[0055] The first electrode 121 of each light-emitting device 120 is separated within the spacing region between adjacent light-emitting devices 120, that is, the first electrodes 121 of each light-emitting device 120 are spaced apart from each other. Each first electrode 121 of a light-emitting device 120 corresponds to a pixel opening 114, and at least a portion of the first electrode 121 is exposed at the lower port of the pixel opening 114. For example, the orthographic projection of the first electrode 121 on the substrate 100 can be expanded outwards by a radius greater than the orthographic projection of the lower port of the pixel opening 114 on the substrate 100, and the orthographic projection of the protrusion structure 130 on the substrate 100 can be located within the aforementioned expanded region. At least a portion of the organic light-emitting functional layer 122 is located within the corresponding pixel opening 114 and forms an electrical connection with the corresponding first electrode 121. For example, the second electrode 123 of each light-emitting device 120 can be disposed as a single layer, forming an integral structure.

[0056] The anode serves as the connection layer for the forward voltage of the organic light-emitting device. For example, in a top-emitting organic light-emitting device, it can include a metal film layer and a transparent conductive material with a high work function. The transparent conductive material can include indium tin oxide (ITO), indium zinc oxide (IZO), etc. Exemplarily, the first electrode 121 is the anode, and the structure of the first electrode 121 can be a composite structure composed of titanium (Ti) film / titanium nitride film (TiN) / aluminum (Al) film / titanium nitride film (TiN) / ITO film stacked sequentially, or it can be a composite structure composed of Ti / Al / Ti / ITO.

[0057] The cathode serves as the connection layer for the negative voltage of organic light-emitting devices (OLEDs), and the material can be determined according to the needs of the actual application scenario. For example, for top-emitting OLEDs, a transparent conductive material can be used as the cathode; while for bottom-emitting OLEDs, a metallic material with a low work function value can be used as the cathode.

[0058] In some embodiments of this disclosure, the structure of the pixel defining layer 110 is not limited. For example, the pixel defining layer 110 can be a single layer or a multi-layer composite layer structure. For example, the pixel defining layer 110 may include multiple stacked inorganic film layers, with the pixel opening 114 penetrating through the multiple stacked inorganic film layers. Among the multiple stacked inorganic film layers, the film layer farthest from the substrate 100 is referred to as the top film layer.

[0059] In some embodiments, the thickness ratio (h1:h2) of the protrusion structure 130 to the top film layer along the direction perpendicular to the substrate 100 can be between one-ninth and one-third, for example, h1:h2 can be 1:9, 1:6, or 1:3, etc. For example, the thickness h1 of the protrusion structure 130 along the direction perpendicular to the substrate 100 can be between 100 and 300 angstroms, such as 100 angstroms, 200 angstroms, or 300 angstroms, etc.

[0060] For example, such as Figure 2 As shown, the pixel defining layer 110 may include a first inorganic film layer 111, a second inorganic film layer 112, and a third inorganic film layer 113 sequentially disposed along a direction away from the substrate 100. The pixel opening 114 penetrates the first inorganic film layer 111, the second inorganic film layer 112, and the third inorganic film layer 113. In this case, the third inorganic film layer 113 is the top layer. For example, the first inorganic film layer 111 and the third inorganic film layer 113 may be silicon oxide layers (SiO2). x The second inorganic film layer 112 can be a silicon nitride layer (SiN). x For example, silicon oxide layer (SiO). x The materials may include silicon dioxide (SiO2) and / or silicon monoxide (SiO), and silicon nitride layers (SiN). x The materials can include: SiN.

[0061] Of course, in other examples, the pixel delimiting layer 110 may also include, compared to Figure 2 More or fewer film layers may be included, for example, four inorganic film layers may be included, such as a silicon oxide layer, an aluminum oxide layer, a silicon nitride layer and a silicon oxide layer stacked in sequence, and this embodiment does not limit this.

[0062] For example, such as Figure 2As shown, in order to space the first electrodes 121 of adjacent light-emitting devices 120 from each other, the film layer of the first electrodes 121 is patterned, and electrode spacing grooves 1211 are formed in the spacing area between adjacent light-emitting devices 120. The first inorganic film layer 111 of the pixel defining layer 110 can also play a role in lateral height coverage (LHC) to fill the electrode spacing grooves 1211.

[0063] For example, such as Figure 2 As shown, the pixel defining layer 110 may further include an isolation trench 115 located in the spacing region between adjacent light-emitting devices 120. For example, the isolation trench 115 may be configured to block the hole injection layer 221 and the hole transport layer 222 in the organic light-emitting functional layer 122 extending to the spacing region, in order to further reduce lateral leakage and improve cross-color phenomenon between pixels. For example, the isolation trench 115 may be an undercut structure, i.e. Figure 2 The opening shown is smaller at the top than at the bottom.

[0064] In some embodiments of this disclosure, the pixel opening 114 is formed by a dry etching process such as plasma etching. The aforementioned protrusion structure 130 can be formed by depositing the insulating polymer formed during the dry etching process of the pixel opening 114. In this case, the protrusion structure 130 is a byproduct of the process of forming the pixel opening 114 by dry etching the thin film of the pixel defining layer 110, without the need for additional materials, equipment, or processes. Furthermore, the protrusion structure 130 can be fabricated simultaneously with the pixel opening 114 of the pixel defining layer 110 through photolithography and dry etching processes, resulting in a self-aligned structure with no overlay deviation.

[0065] For example, the pixel defining layer 110 is an inorganic insulating film, and the dry etching process can employ plasma etching. Plasma etching uses a high-frequency glow discharge reaction to activate the reactive gas into active particles, such as atoms or free radicals. These active particles diffuse to the area to be etched, react with the material being etched, and form volatile reactants that are then removed.

[0066] It should be noted that there are two etching methods for plasma dry etching: (1) physical bombardment etching; and (2) chemical etching. In the dry etching menu interface of the plasma etching equipment, the process parameters of the etching menu can be adjusted to determine whether physical bombardment etching or chemical etching is the main method.

[0067] The etching of the pixel opening 114 in the pixel defining layer 110 can be mainly performed by plasma bombardment etching, that is, physical bombardment etching. The plasma bombards the patterned photoresist material layer (such as photoresist) and the top film layer (such as SiO2) that is not covered by the photoresist material layer. The photoresist is thinnest at the side and is consumed by plasma bombardment, exposing the SiO2 at the edge of the pixel opening 114 pattern. The contact area between the photoresist side and the polymer generated by plasma bombardment is the largest. Therefore, a ring of polymer generated by dry etching is deposited on the SiO2 at the edge of the etched pixel opening 114. This forms both the pixel opening 114 and a leakage protection structure around the pixel opening 114, that is, the aforementioned protrusion structure 130.

[0068] It should be noted that when dry etching is mainly performed using chemical etching, there is less physical plasma bombardment in the chemical etching method, resulting in less polymer being generated and making it less likely for polymer stacking to form.

[0069] For example, Figure 6 A planar micrograph of the pixel opening 114 according to some embodiments of the present disclosure is shown; Figure 7 A cross-sectional micrograph of a pixel opening 114 according to some embodiments of this disclosure is shown. Figure 6 As can be seen, after the pixel opening 114 of the pixel defining layer 110 is formed by the dry etching process, a polymer stack will form around the pixel opening 114, which serves as the aforementioned protrusion structure 130. From Figure 7 It can be seen that the protruding structure 130 (located in) Figure 7 The cross-sectional shape of the area circled in white can be square or similar to a square.

[0070] Furthermore, because the stacked polymer is easily moved by the shrinkage stress during the removal of the photoresist layer, the protrusion structure 130 and the upper port of the pixel opening 114 are spaced apart. By controlling the thickness of the remaining photoresist layer after etching, the shrinkage stress generated during the removal of the photoresist layer can be adjusted, thereby controlling this spacing to ensure the leakage current blocking performance of the protrusion structure 130. For example, this spacing can be controlled between 10 and 30 nm.

[0071] The material composition of the protrusion structure 130 may include at least the atoms contained in the reaction gas of the dry etching process and the atoms contained in the photoresist material used in the dry etching process.

[0072] The reactive gas in the plasma etching process is determined based on the material being etched. For example, the pixel defining layer 110 includes a stacked silicon oxide layer, a silicon nitride layer, and a silicon oxide layer, and the reactive gas in the plasma etching process can be tetrafluoromethane (CF4). CF4 decomposes into various neutral groups or ions, such as CF3, CF2, CF, F, C, and their ions, under the collision of high-energy electrons. These active particles bombard the surface of the etched material on one hand, and also undergo a chemical reaction on the surface of the etched material on the other. In this case, since the reactive gas contains C and F, the material composition of the aforementioned protrusion structure 130 can include C and F. If the photoresist material is photoresist (PR) containing C and O, then the material composition of the protrusion structure 130 can include C and O.

[0073] In some embodiments of this disclosure, in addition to the material composition of the reactive gas and the photoresist material, the material composition of the protrusion structure 130 may also include at least a portion of the material composition of the pixel defining layer 110, determined according to the actual structure and material of the pixel defining layer 110. For example, when the pixel defining layer 110 is a composite layer structure formed by stacking multiple film layers, the polymer generated during etching of the top film layer is more likely to accumulate at the edge of the pixel opening 114. Therefore, the material composition of the protrusion structure 130 may also include the material composition of the top film layer in the pixel defining layer 110. For example, when the top film layer is silicon oxide, silicon oxide contains Si and O. In this case, the material composition of the protrusion structure 130 may also include Si and O.

[0074] For example, when the reactive gas in the plasma etching process is CF4, the photoresist material is photoresist, and the top layer of the pixel defining layer 110 is silicon oxide, the material composition of the polymer generated by dry etching can include at least C, F, Si and O, which are insulating materials. That is, the material composition of the protrusion structure 130 can include at least C, F, Si and O.

[0075] For example, in some embodiments of this disclosure, the display substrate 10 can be used in the field of micro OLED displays, and correspondingly, the substrate 100 can be a silicon wafer. For example, the silicon wafer can be made of monocrystalline silicon, and the planar shape of the silicon wafer can be circular or other shapes. In this case, a driving circuit layer can be fabricated on the substrate 100 to form a backplane including the driving circuit layer. The driving circuit layer includes a pixel driving circuit corresponding to each light-emitting device 120. The pixel driving circuit is connected to the first electrode 121 of the light-emitting device 120 through the conductive portion 101 to drive the light-emitting device 120 to emit light.

[0076] For example, a pixel driving circuit may include multiple electronic components such as transistors and capacitors. For instance, a pixel driving circuit may typically include three transistors and one capacitor, forming a 3T1C (i.e., one driving transistor, two switching transistors, and one capacitor). It may also include more than three transistors and at least one capacitor, such as a 4T1C (i.e., one driving transistor, three switching transistors, and one capacitor), a 5T1C (i.e., one driving transistor, four switching transistors, and one capacitor), or a 7T1C (i.e., one driving transistor, six switching transistors, and one capacitor). The transistors can be thin-film transistors (TFTs), metal oxide semiconductors (MOS), or other switching devices with similar characteristics.

[0077] Of course, in other embodiments, the substrate 100 described above can also be a rigid substrate such as a glass plate, a quartz plate, or a resin plate. Alternatively, the display substrate 10 can also be a flexible substrate, thereby enabling the display substrate 10 to be applied in the field of flexible displays. For example, when the display substrate 10 is a flexible substrate, the substrate can include organic materials, such as PI (Polyimide), PET (Polyethylene Terephthalate), or PEN (Polyethylene Naphthalate Dimethyl Acid Glycol Ester).

[0078] like Figure 2 As shown, in some embodiments of this disclosure, the display substrate 10 may further include an encapsulation layer 140, which is located on the side of the second electrode 123 of the light-emitting device 120 away from the substrate 100. The encapsulation layer 140 can encapsulate the display substrate 10 to prevent external water, oxygen, etc. from penetrating into the interior of the display substrate 10, thereby protecting the components (e.g., organic light-emitting devices) inside the display substrate 10.

[0079] In some embodiments, the encapsulation layer 140 may include alternating layers of a first encapsulation layer and a second encapsulation layer. For example, the first and second encapsulation layers may be made of inorganic materials such as nitrides, oxides, oxynitrides, nitrates, carbides, or any combination thereof. Exemplarily, the first encapsulation layer may be formed by a chemical vapor deposition (CVD) process, such as a silicon nitride film, and the second encapsulation layer may be formed by an atomic layer deposition process, such as an alumina film, with multiple layers of silicon nitride films and multiple layers of alumina films alternately stacked.

[0080] In other embodiments, the encapsulation layer 140 may include a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer stacked sequentially. The materials of the first and third encapsulation layers may include inorganic materials, such as silicon nitride, silicon oxide, and silicon oxynitride. Inorganic materials have high density and can prevent the intrusion of water, oxygen, etc. For example, the first and third encapsulation layers may be formed by processes such as chemical vapor deposition.

[0081] For example, the material of the second encapsulation layer can be a polymer material containing a desiccant or a polymer material that can block moisture, such as a polymer resin. It can also be a water-absorbing material, such as an alkali metal (e.g., Li, Na), an alkaline earth metal (e.g., Ba, Ca), or other moisture-reactive metals (e.g., Al, Fe); or it can be an alkali metal oxide (e.g., Li₂O, Na₂O), an alkaline earth metal oxide (e.g., MgO, CaO, BaO), a sulfate (e.g., anhydrous MgSO₄), a metal halide (e.g., CaCl₂), or a perchlorate (e.g., Mg(ClO₄)₂). The second encapsulation layer can planarize the surface of the display substrate 10 and relieve the stress of the first and third encapsulation layers. The second encapsulation layer can contain materials such as a desiccant to absorb water, oxygen, and other substances that penetrate the interior, protecting the components in the display substrate 10 (e.g., the organic light-emitting functional layer 122).

[0082] For example, such as Figure 2 As shown in some embodiments of this disclosure, the display substrate 10 may further include a color filter layer 160, which may be disposed on the side of the encapsulation layer 140 away from the substrate 100. The color filter layer 160 may include a plurality of color filter units, each color filter unit corresponding to a sub-pixel. For example, a red sub-pixel R corresponds to a red filter unit 162, a green sub-pixel G corresponds to a green filter unit 163, and a blue sub-pixel B corresponds to a blue filter unit 161.

[0083] For example, such as Figure 2 As shown in some embodiments of this disclosure, the display substrate 10 may further include a first planarization layer 150, which is disposed between the encapsulation layer 140 and the color filter layer 160 to perform a planarization function, thereby improving the thickness uniformity of the color filter layer 160.

[0084] For example, in some embodiments of this disclosure, the display substrate 10 may further include microlenses 180 arranged in an array. Figure 2As shown, the microlens structure 180 array can be disposed on the side of the color filter layer 160 away from the substrate 100. The microlens array can be configured to converge lateral light emission to improve display brightness and reduce power consumption. For example, each microlens 180 can be associated with a corresponding sub-pixel. For example, the microlens 180 can be a plano-convex lens structure, which can be obtained by spin-coating a microlens material film, exposure, development, and thermoforming processes.

[0085] For example, such as Figure 2 As shown, in some embodiments of this disclosure, the display substrate 10 may further include a second planarization layer 170, which is disposed between the color filter layer 160 and the microlens array 180 to perform a planarization function, thereby improving the thickness uniformity of the microlens material film layer and thus improving the processing accuracy of the microlens array 180.

[0086] Still refer to Figure 2 This disclosure provides a display substrate 10, which may include a substrate 100, a pixel defining layer 110 on the substrate 100, and a plurality of light-emitting devices 120. The pixel defining layer 110 includes a plurality of pixel openings 114, and each light-emitting device 120 is located at one pixel opening 114. Each light-emitting device 120 includes a first electrode 121, an organic light-emitting functional layer 122, and a second electrode 123 stacked together. The first electrode 121 is spaced apart in the interval regions between adjacent light-emitting devices 120. The organic light-emitting functional layer 122 covers the pixel openings 114 and extends into the interval regions between adjacent light-emitting devices 120. At least a portion of the first electrode 121 is exposed at the lower port of the pixel opening 114. A raised structure 130 is provided around the upper port of the pixel opening 114, which is formed by the accumulation of insulating polymer generated during the etching process of the pixel opening 114. The raised structure 130 is configured to block the leakage path from the first electrode 121 exposed in the pixel opening 114 to the gap region of the adjacent light-emitting device 120. It should be noted that the structure of the display substrate 10 can be referred to the relevant description in the above embodiments, and will not be repeated here.

[0087] Figure 8 A flowchart illustrating a method for fabricating a display substrate 10 according to some embodiments of this disclosure is shown. For example... Figure 8 As shown, some embodiments of this disclosure provide a method for fabricating a display substrate 10, applicable to the fabrication of the display substrate 10 provided in the above embodiments. The method may include the following steps:

[0088] Step S101: Provide a substrate 100;

[0089] In step S102, first electrodes 121 of a plurality of light-emitting devices 120 are formed on the substrate 100, and the first electrodes 121 are separated in the interval region between adjacent light-emitting devices 120.

[0090] Step S103: A pixel defining layer 110 is formed on the first electrode 121. The pixel defining layer 110 has a plurality of pixel openings 114, each pixel opening 114 corresponding to a light-emitting device 120. At least a portion of the first electrode 121 of the corresponding light-emitting device 120 is exposed at the lower port of the pixel opening 114. A protrusion structure 130 surrounding the pixel opening 114 is provided around the upper port of the pixel opening 114. The material of the protrusion structure 130 is an insulating material.

[0091] In step S104, an organic light-emitting functional layer 122 of a plurality of light-emitting devices 120 is formed on the pixel defining layer 110. The organic light-emitting functional layer 122 covers the pixel opening 114 and extends to the aforementioned spacing region. The protrusion structure 130 is configured to block the leakage path from the first electrode 121 exposed from the pixel opening 114 to the aforementioned spacing region.

[0092] In step S105, a second electrode 123 of a plurality of light-emitting devices 120 is formed on the organic light-emitting functional layer 122.

[0093] In some embodiments, the process of forming a pixel defining layer 110 on the first electrode 121 may include: forming a transition film layer of the pixel defining layer 110 on the first electrode 121; etching the transition film layer by a plasma etching process to form a plurality of pixel openings 114, and the insulating polymer generated during the etching process accumulates around the upper port of the pixel openings 114 to form a protrusion structure 130.

[0094] The transition film layer can be a single layer or a multilayer composite structure. For example, the transition film layer may include a first silicon oxide film, a silicon nitride film, and a second silicon oxide film stacked along a direction away from the substrate 100. In this case, the insulating polymer generated during the etching of the second silicon oxide film will accumulate around the upper port of the pixel opening 114, thereby forming the protrusion structure 130.

[0095] In some embodiments, before etching the transition film layer using a plasma etching process to form multiple pixel openings 114, the above-described fabrication method may further include: forming a patterned photoresist material layer on the transition film layer. In this case, the process of etching the transition film layer using a plasma etching process to form multiple pixel openings 114 and the protrusion structure 130 may include: first etching the area not obscured by the photoresist material layer using a plasma etching process to form multiple pixel openings 114 and an insulating polymer deposited around the upper port of the pixel openings 114; then, removing the photoresist material layer. Under the shrinkage stress generated by removing the photoresist material layer, the deposited insulating polymer will move away from the pixel openings 114, thereby obtaining the protrusion structure 130. For example, the moving distance of the insulating polymer can be controlled between 10 and 30 nm.

[0096] For example, by controlling the thickness of the photoresist material layer remaining after etching, the shrinkage stress generated during the removal of the photoresist material layer can be adjusted, thereby controlling the movement distance of the insulating polymer caused by the removal of the photoresist material layer, that is, controlling the distance between the protrusion structure 130 and the edge of the pixel opening 114, so that the protrusion structure 130 can increase the physical insulation height of the pixel defining layer 110, which is beneficial to ensuring the leakage current isolation performance of the protrusion structure 130.

[0097] The following describes the fabrication process of the pixel opening 114 and the protrusion structure 130, taking the transition film layer of the pixel defining layer 110 as including a first silicon oxide film 1110, a silicon nitride film 1120 and a second silicon oxide film 1130 stacked in a direction away from the substrate 100, and the photoresist material as photoresist.

[0098] Figure 9 The diagram shows a schematic image after the formation of a patterned photoresist layer according to some embodiments of the present disclosure. Figure 10 The diagram shows a dry etching result of some embodiments of this disclosure. Figure 11 A schematic diagram of some embodiments of this disclosure after photoresist removal is shown.

[0099] like Figure 9 As shown, a photoresist layer 900 is spin-coated onto the second silicon oxide thin film 1130 (such as SiO2) of the pixel defining layer 110. After exposure, development and other process steps, the pixel opening 114 pattern is formed on the photoresist layer 900.

[0100] Then, using a plasma etching process, the pattern on the photoresist is transferred to the transition film layer of the pixel defining layer 110 to obtain the pixel opening 114. During this process, plasma bombards the photoresist layer 900 and the SiO2 not covered by the photoresist layer 900. The sides of the patterned photoresist layer 900 are sloped and relatively thin. The side photoresist is consumed by plasma bombardment, exposing the SiO2 at the edge of the pixel opening 114 pattern. The contact area between the photoresist side and the polymer generated by plasma bombardment is the largest. Therefore, a ring of dry-etched polymer 1300 can be deposited on the exposed SiO2 at the edge of the pixel opening 114. Figure 10 As shown. The material composition of polymer 1300 includes at least C, F, Si and O, and it is an insulating material that can be used as a leakage protection structure.

[0101] Next, remove the photoresist layer 900. (As shown) Figure 11 As shown, during the removal of the photoresist layer 900, the polymer 1300 deposited by dry etching moves due to the shrinkage stress of the photoresist layer 900, resulting in a certain distance d3 between the obtained protrusion structure 130 and the edge of the pixel opening 114. By controlling the thickness of the photoresist residue after etching and adjusting the shrinkage stress generated during the removal of the photoresist layer 900, the distance d3 between the obtained protrusion structure 130 and the edge of the pixel opening 114 can be controlled within 10–30 nm.

[0102] For example, Figure 12 A schematic diagram of a display device according to some embodiments of the present disclosure is shown. For example... Figure 12 As shown, the display device 1 includes the display substrate 10 provided in any of the embodiments described above. Therefore, the display device 1 has technical effects corresponding to the beneficial technical effects of the aforementioned display substrate 10.

[0103] For example, the display device 1 can be any electronic product or component with display function, such as a screen, mobile phone, laptop, tablet computer, wearable display device (such as VR device and AR device), television, digital photo frame, etc.

[0104] It should be noted that the entire structure of the display device 1 is not described in detail here. To achieve the necessary functions of the display device 1, those skilled in the art can configure other structures according to actual application scenarios, and the embodiments disclosed herein do not impose any limitations on this.

[0105] This disclosure provides a display substrate 10 and its preparation method, as well as a display device, through some embodiments, and can have at least one of the following beneficial effects:

[0106] (1) In the display substrate 10 provided in some embodiments of this disclosure, the protrusion structure 130 can effectively block the leakage path from the first electrode 121 exposed at the pixel opening 114 to the pixel spacing area, which is beneficial to reduce the light cross-color interference between pixels and improve the display effect.

[0107] (2) In the display substrate 10 provided in some embodiments of this disclosure, the protrusion structure 130 is formed by the deposition of insulating polymer generated during the etching of pixel openings 114. It is a byproduct of the dry etching process and does not require additional materials, equipment, or processes. Furthermore, the protrusion structure 130 can be prepared simultaneously with the pixel openings 114 of the pixel defining layer 110 through photolithography and dry etching processes, making it a self-aligned structure with no overlay deviation.

[0108] (3) In the method for preparing the display substrate 10 provided in some embodiments of this disclosure, the thickness of the photoresist material layer remaining after etching can be controlled, and the shrinkage stress generated during the removal of the photoresist material layer can be adjusted to achieve the purpose of controlling the distance between the protrusion structure 130 and the edge of the pixel opening 114, so that the protrusion structure 130 can increase the physical insulation height of the pixel defining layer 110, which is beneficial to ensuring the leakage current isolation performance of the protrusion structure 130.

[0109] It should be noted that the accompanying drawings of the embodiments disclosed herein only relate to the structures involved in the embodiments of this disclosure; other structures can be referred to with general designs. Where there is no conflict, the embodiments of this disclosure and the features described therein can be combined with each other to obtain new embodiments.

[0110] Although some embodiments of this disclosure have been described, those skilled in the art, upon learning the basic inventive concept, can make further changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this disclosure.

Claims

1. A display substrate, characterized in that, include: Substrate; A pixel defining layer is located on the substrate, and the pixel defining layer includes a plurality of pixel openings; A plurality of light-emitting devices are provided, each of which is located at a pixel opening. Each light-emitting device includes a first electrode, an organic light-emitting functional layer, and a second electrode stacked together. The first electrode is separated in a spacing region between adjacent light-emitting devices. The organic light-emitting functional layer covers the pixel opening and extends to the spacing region. Wherein, at least a portion of the first electrode is exposed at the lower port of the pixel opening, and a protruding structure surrounding the pixel opening is provided around the upper port of the pixel opening. The protruding structure is located between the pixel opening and the interval region. The material of the protruding structure is an insulating material, and the protruding structure is configured to block the leakage path from the first electrode exposed by the pixel opening to the interval region. The protrusion structure is formed by polymer deposition during the etching of the pixel opening using a dry etching process. The material composition of the protrusion structure includes at least the composition of the reaction gas in the dry etching process and the composition of the photoresist material used in the dry etching process.

2. The display substrate according to claim 1, characterized in that, The pixel defining layer includes multiple stacked inorganic film layers, and the pixel opening penetrates through the multiple stacked inorganic film layers. The material composition of the protrusion structure also includes the material composition of the top film layer of the pixel defining layer, wherein the top film layer is the film layer in the pixel defining layer that is farthest from the substrate.

3. The display substrate according to claim 2, characterized in that, The pixel defining layer includes: a first inorganic film layer, a second inorganic film layer, and a third inorganic film layer disposed sequentially along a direction away from the substrate, wherein the third inorganic film layer is the top film layer, and the pixel opening penetrates the first inorganic film layer, the second inorganic film layer, and the third inorganic film layer; The third inorganic film layer is a silicon oxide layer, and the material composition of the protrusion structure includes carbon, fluorine, oxygen and silicon.

4. The display substrate according to claim 2, characterized in that, Along a direction perpendicular to the substrate, the thickness ratio of the protrusion structure to the top layer film is between one-ninth and one-third.

5. The display substrate according to claim 1, characterized in that, The thickness of the protrusion structure is between 100 and 300 angstroms along a direction perpendicular to the substrate.

6. The display substrate according to claim 1, characterized in that, The protrusion structure is projected onto the substrate in the form of a closed ring, and the width of the closed ring is between 10 and 30 nm.

7. The display substrate according to claim 1, characterized in that, The orthographic projection of the protrusion structure onto the substrate is a closed ring, and the ratio of the ring width to the spacing width between adjacent light-emitting devices is between one-fiftieth and one-two-hundredth.

8. The display substrate according to claim 1, characterized in that, The distance between the protruding structure and the surrounding pixel opening is 10~30nm.

9. A display device, characterized in that, include: The display substrate according to any one of claims 1-8.

10. A method for preparing a display substrate, characterized in that, The method includes: Provide substrates; A first electrode for a plurality of light-emitting devices is formed on the substrate, and the first electrode is separated in the interval region between adjacent light-emitting devices; A pixel defining layer is formed on the first electrode. The pixel defining layer has a plurality of pixel openings, each pixel opening corresponding to a light-emitting device. At least a portion of the first electrode of the corresponding light-emitting device is exposed at the lower port of the pixel opening. A protruding structure surrounding the pixel opening is provided around the upper port of the pixel opening. The material of the protruding structure is an insulating material. An organic light-emitting functional layer of the plurality of light-emitting devices is formed on the pixel defining layer, the organic light-emitting functional layer covers the pixel opening and extends to the spacing region, and the protrusion structure is configured to block the leakage path from the first electrode exposed from the pixel opening to the spacing region; The second electrode of the plurality of light-emitting devices is formed on the organic light-emitting functional layer; The pixel defining layer formed on the first electrode includes: A transition film layer of the pixel defining layer is formed on the first electrode; The transition film layer is etched using a plasma etching process to form the plurality of pixel openings, and the insulating polymer generated during the etching process accumulates around the upper port of the pixel openings to form the protrusion structure.

11. The method according to claim 10, characterized in that, The transition film layer includes: a first silicon oxide film, a silicon nitride film, and a second silicon oxide film stacked along a direction away from the substrate. The insulating polymer generated during the etching process accumulates around the upper port of the pixel opening to form the protrusion structure, including: The insulating polymer generated during the etching of the second silicon oxide film accumulates around the upper port of the pixel opening, forming the protrusion structure.

12. The method according to claim 10, characterized in that, Before etching the transition film layer using a plasma etching process to form the plurality of pixel openings, the process further includes: A patterned photoresist layer is formed on the transition film layer; The transition film layer is etched using a plasma etching process to form the plurality of pixel openings and the protrusion structure, including: The area not blocked by the photoresist material layer is etched by plasma etching process to form the plurality of pixel openings and the insulating polymer deposited around the upper port of the pixel openings. The photoresist material layer is removed. Under the shrinkage stress generated by removing the photoresist material layer, the stacked insulating polymer moves away from the pixel opening to obtain the protrusion structure, wherein the moving distance is between 10 and 30 nm.

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