Material transmission structure of crystalline silicon material cold crushing and heating equipment

Abstract

The present application relates to the technical fields of heating and cold crushing treatment of crystalline silicon material, and relates to a material transmission structure of a crystalline silicon material cold crushing and heating equipment, which comprises: a feeding part used to lift the crystalline silicon material and transfer it to a transmission part; the transmission part is used to receive the crystalline silicon material and transport it into a furnace body, and the transmission part comprises a supporting table used to support the crystalline silicon material, the supporting table is provided with a concave-convex structure used to keep the position of the crystalline silicon material stable, the supporting table is driven by a horizontal conveying mechanism and forms a circulating conveying on a horizontal plane; a discharging part is arranged at the end of the transmission part and used to receive the crystalline silicon material; a cold immersion part is matched with the discharging part and used to receive the crystalline silicon material, and the crystalline silicon material is immersed in a cold immersion pool for cooling, and after the cooling is completed, the crystalline silicon material is lifted and output. Through the improvement of the structure of the supporting table, more sizes of the crystalline silicon material can be conveyed, the heating and cooling of the crystalline silicon material are realized, the loss of the crystalline silicon material is reduced, the utilization rate of the material is improved, and the production cost can be obviously reduced in long-term use.

Description

Technical Field

[0001] This invention relates to the field of heating and cold crushing technology for crystalline silicon materials, and specifically to a material transmission structure for a heating and cold crushing device for crystalline silicon materials. Background Technology

[0002] Crystalline silicon is an important raw material for the solar photovoltaic industry. Its processing requires strict environmental control. In the crushing process of crystalline silicon blocks, it is necessary to strictly prevent the introduction of impurity ions and minimize the generation of fine crystalline silicon and powder during the crushing process.

[0003] Current equipment for heating and cooling crystalline silicon material achieves continuous heating and cooling of crystalline silicon material with fixed shapes and specifications. However, due to limitations in the heating furnace conveying mechanism, it is only suitable for processing round or square bars of a certain length. The crystalline silicon production process generates a large amount of cake-shaped, cone-shaped, crescent-shaped head and tail materials, as well as edge materials. Because there is no suitable high-temperature in-furnace transport method, approximately 30% of the crystalline silicon material cannot be processed using the continuous cold crushing process and must be crushed manually. This method is labor-intensive, has a poor working environment, produces a large amount of low-value, small-sized powder, and the crystalline silicon material is easily contaminated.

[0004] It is evident that the current method of heating and cold crushing crystalline silicon material still has room for improvement in order to broaden its applicability to crystalline silicon material processing, further enhance the automation level of crystalline silicon material crushing in the crystalline silicon industry, further increase the yield of high-quality crystalline silicon material, and reduce raw material consumption. Therefore, a more reasonable technical solution is needed to address the technical problems existing in the current technology. Summary of the Invention

[0005] To overcome at least one of the aforementioned defects, this invention proposes a material transmission structure for a crystalline silicon material cold crushing and heating device. By improving the support platform structure, it can transport and process crystalline silicon materials of various sizes, thereby improving material utilization, reducing losses, and thus lowering overall operating costs.

[0006] To achieve the above objectives, the material transmission structure disclosed in this invention can adopt the following technical solution:

[0007] A material transmission structure for a crystalline silicon material cold crushing and heating device includes:

[0008] The feeding section is used to lift the crystalline silicon material and transfer it to the transport section.

[0009] The transfer section is used to receive the crystalline silicon material and continuously transport the crystalline silicon material into the furnace body. The transfer section includes a support platform for supporting the crystalline silicon material. The support platform is provided with concave and convex structures to keep the crystalline silicon material in a stable position. The support platform is driven by a horizontal conveying mechanism and forms a circular conveying on the horizontal plane.

[0010] The unloading part is arranged at the end of the conveying part and used to receive the silicon material;

[0011] The cold immersion part is matched with the unloading part and used to receive the silicon material and immerse the silicon material into the cold immersion pool for cooling.

[0012] The disclosed material conveying structure is used to convey the normal temperature silicon material to the feeding port of the furnace body through the feeding part and then to the conveying part, the conveying part sends the silicon material into the furnace body and heats it to a certain temperature and then sends it out from the tail of the furnace body, when the silicon material is sent out, it is transferred to the cold immersion part by the unloading part to realize the cooling treatment of the silicon material, after the cooling treatment, the silicon material generates huge structural stress, and after the subsequent simple treatment, the high-quality silicon material with moderate particle size and small distribution can be obtained.

[0013] Further, in the present application, the feeding part and the unloading part are matched with the conveying part to realize the conveying of the silicon material, the matching structure can adopt various forms, which is not uniquely limited, and one of the feasible options is optimized and proposed here: the feeding part and the unloading part both include a first lifting mechanism, the first lifting mechanism is provided with a carrying part, the carrying part is provided with a placing part for placing the silicon material; the first lifting mechanism is used to drive the carrying part to rise or fall, and the first rotating mechanism is used to drive the carrying part to rotate to realize the rotating switching, after the rotating switching of the carrying part, the silicon material is aligned with the supporting table, and the first lifting mechanism is lowered to place the silicon material on the supporting table or the cold immersion part. When this scheme is adopted, the first lifting mechanism can adopt a lifting rod, a lifting frame or the like, the first rotating mechanism can be arranged below the first lifting mechanism and drive the whole first lifting mechanism to rotate, at the same time, the carrying part rotates with the first lifting mechanism and realizes the position switching of 180°; in other schemes, the first rotating mechanism can also be arranged at the top of the first lifting mechanism and used to drive the carrying part to rotate to realize the switching. The first rotating mechanism can be driven by a motor matched with a transmission gear, and a sleeve structure or a rotary table structure is used as a rotating seat to drive the first lifting mechanism or the carrying part to rotate.

[0014] Further, in the application, when the feeding part places the crystalline silicon material on the conveying part, the material needs to be smoothly handed over to avoid rolling, which can be achieved by various structures. Here, an optimized and feasible option is proposed: the feeding part further comprises a carrier table for placing the crystalline silicon material, the conveying part is provided with an open slot, the width of the carrier table is less than that of the open slot, and the carrier table is located inside the open slot. When the conveying part rises from below the carrier table, the crystalline silicon material on the carrier table is picked up and continues to be lifted. The width of the supporting table is less than that of the open slot. When the conveying part is aligned with the supporting table and is lowered below the supporting table, the placement of the crystalline silicon material is completed, or when the conveying part is aligned with the cold immersion part and is lowered below the cold immersion part, the placement of the crystalline silicon material is completed. When this scheme is adopted, the supporting table can also be provided with structures for positioning the crystalline silicon material, such as positioning slot structures, etc. At the same time, corresponding positioning arcs or positioning protrusions are provided on the open slot to keep the crystalline silicon material stable during the conveying and transferring process.

[0015] Further, the horizontal conveying mechanism conveys the crystalline silicon material into and out of the furnace body from a single direction, but the horizontal conveying mechanism forms a circulating conveying structure, which can be achieved by various structures and is not uniquely limited. Here, an optimized and feasible option is proposed: the horizontal conveying mechanism comprises a circulating track, and a plurality of supporting frames for connecting the supporting tables are matched and arranged on the circulating track; the horizontal conveying mechanism further comprises a driving assembly, which drives the supporting frames to circulate along the circulating track. When this scheme is adopted, the supporting frames travel along the circulating track by cooperating with the circulating track through walking wheels; the driving assembly forms a closed circulating traction in the horizontal direction, so the supporting frames also form a closed circulating track.

[0016] Further, the structure of the driving assembly is not uniquely limited, and an optimized and feasible option is proposed here: the driving assembly comprises at least two driving shafts, the driving shafts are provided with rotating wheels, at least one driving shaft is provided with a driving wheel, the other driving shaft is provided with a driven wheel, and a transmission member is connected between the driving wheel and the driven wheel. The supporting frame is connected with the transmission member and moves synchronously with the transmission member. When this scheme is adopted, the transmission member can adopt a transmission chain or a transmission belt, and the driving shafts are longitudinally arranged. A plurality of rotating wheels can be arranged on the driving shafts in the longitudinal direction and synchronously driven, which can improve the stability of transmission.

[0017] Further, in some schemes, the arrangement of the horizontal conveying mechanism is not uniquely limited, and an optimized and feasible option is proposed in the application: the horizontal conveying mechanism is mirror-symmetrically arranged on both sides of the direction in which the crystalline silicon material travels. When this scheme is adopted, the horizontal conveying mechanisms on both sides operate synchronously and make the supporting tables travel synchronously in pairs, so that the crystalline silicon material can be more smoothly conveyed and the conveying efficiency can be improved, and the application is suitable for processing more specifications and sizes of crystalline silicon material.

[0018] Further, in the present application, the structure of the supporting table can be optimized and one of the possible options is that the supporting table comprises a supporting surface for placing the silicon material, the concave-convex structure is located on the supporting surface, and the concave-convex structure comprises V-shaped concave-convex grooves. When this scheme is adopted, the width of the V-shaped concave-convex grooves is smaller than the width of the supporting surface, which is more stable when placing the disc material, and can also achieve compatibility when placing the residual material or the fine material, especially when placing the fine material, the fine material can be placed in a container such as a supporting tray.

[0019] Further, the atmosphere environment in the furnace body affects the properties of the silicon material during heating. In order to avoid the influence of chemical reaction on the properties of the material, the atmosphere environment needs to be controlled. Here, the structure is optimized and one of the possible options is that the furnace body comprises a mounting cavity for mounting the horizontal conveying mechanism, a sealing ring groove is arranged in the mounting cavity, the sealing ring groove is arranged along the running path of the supporting frame and located outside the driving assembly, and a sealing plate extending downward from the top of the mounting cavity into the sealing ring groove and immersed in the sealing liquid is arranged. The sealing ring groove and the sealing plate form a sealed isolation structure to prevent gas on the side of the driving assembly from entering the furnace interior. One end of the supporting frame is connected to the driving assembly, and the other end enters from the inside of the sealing ring groove and is bent around below the sealing plate before protruding from the outside of the sealing ring groove. When this scheme is adopted, the inside and outside are isolated by the cooperation of the sealing ring groove and the sealing plate, and the supporting frame can normally run through the sealing structure formed by the sealing ring groove and the sealing plate. Only the amount of sealing liquid in the sealing ring groove needs to be ensured to meet the sealing requirement, thereby avoiding the oxidation of the silicon material caused by the entry of external air into the furnace interior through the conveying part. Inert gas or other protective atmosphere can be introduced into the inner cavity to further protect the silicon material

[0020] Further, the cold immersion part cools the heated silicon material to form cracks in the silicon material due to structural stress, thereby facilitating the processing of smaller material. The structure of the cold immersion part can be implemented in various schemes, which are not uniquely limited. Here, the structure is optimized and one of the possible options is that the cold immersion part comprises a second lifting mechanism connected to at least two cold immersion material tables for placing the silicon material. The cold immersion material table is provided with a placing part similar to the placing part of the placing part. The second lifting mechanism is also connected to a second rotating mechanism and is driven by the second rotating mechanism to change position and rotate. When this scheme is adopted, the second lifting mechanism is used to carry the silicon material and is lowered into the cold immersion pool for rapid cooling treatment. The cooled silicon material is rotated with the cold immersion material table to the external conveying position, and is lifted and conveyed out.

[0021] Further, the gas environment also needs to be kept appropriate during the process of discharging and quenching, to avoid the oxidation reaction of the high-temperature silicon material with oxygen, which leads to denaturation. Here, the sealing box is provided at the joint of the discharging part and the quenching part, one end of the sealing box is communicated with the furnace body, and the other end is communicated with the quenching pool and immersed in the quenching liquid. When the scheme is adopted, the furnace body, the sealing box and the quenching pool are communicated to form a sealed space and realize the transfer and cooling of the silicon material.

[0022] Compared with the prior art, some beneficial effects of the technical scheme of the present application include:

[0023] The present application can cooperate with more sizes of silicon material conveying, realize the heating and crushing process of different sizes of silicon material, thereby reducing the loss of silicon material, improving the utilization rate of material, and significantly reducing the production cost in long-term use. BRIEF DESCRIPTION OF DRAWINGS

[0024] In order to more clearly illustrate the technical scheme of the embodiments of the present application, the drawings needed in the embodiments will be briefly introduced below. It should be understood that the following drawings only represent some embodiments of the present application, and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor.

[0025] Figure 1 It is a sectional view of the transmission structure in the furnace body and a local structure enlarged schematic view.

[0026] Figure 2 It is a structure schematic view of the furnace body feeding part, and the state is that the carrier part starts to support the silicon material.

[0027] Figure 3 It is a structure schematic view of the furnace body feeding part, and the state is that the carrier part supports the silicon material and rises.

[0028] Figure 4 It is a structure schematic view of the furnace body feeding part, and the state is that the carrier part supports the silicon material and changes position.

[0029] Figure 5 It is a structure schematic view of the furnace body feeding part, and the state is that the carrier part lowers and transfers the silicon material to the transmission part and returns to the original position.

[0030] Figure 6 It is a structure schematic view of the furnace body discharging part, and the state is that the carrier part transfers the silicon material from the transmission part.

[0031] Figure 7 It is a structure schematic view of the furnace body discharging part, and the state is that the carrier part drives the silicon material to rotate and change position.

[0032] Figure 8 Fig. 4 is a structural schematic diagram of the material feeding part of the furnace body, which is in the state of lifting the cold feeding table and transferring the crystal silicon material from the carrying part.

[0033] Figure 9 Fig. 5 is a structural schematic diagram of the material feeding part of the furnace body, which is in the state of lowering the cold feeding table and sending the crystal silicon material into the cold pool.

[0034] Figure 10 Fig. 6 is a structural schematic diagram of the material feeding part of the furnace body, which is in the state of rotating and replacing the crystal silicon material by the cold feeding table, lifting to the external delivery position, and simultaneously receiving the new crystal silicon material from the carrying part.

[0035] In the above-mentioned drawings, the meanings of various marks are as follows:

[0036] 1, furnace body; 101, mounting cavity; 2, supporting table; 3, crystal silicon material; 4, driving shaft; 5, rotating wheel; 6, supporting frame; 7, sealing plate; 8, sealing ring groove; 9, walking wheel; 10, circulating track; 11, first lifting mechanism; 12, carrying part; 1201, placing part; 13, object carrying table; 14, second lifting mechanism; 15, cold feeding table; 16, cold pool; 17, sealing box. DETAILED DESCRIPTION

[0037] The present application will be further explained in combination with the drawings and specific embodiments.

[0038] In view of the fact that the material utilization in the prior art is single, the residual material or material of different sizes cannot be transported and processed, resulting in large material loss and high cost, the following embodiments are optimized to overcome the defects in the prior art.

[0039] EMBODIMENT

[0040] As shown in Figure 1 , the embodiment provides a material transmission structure of a crystal silicon material cold crushing and heating equipment, mainly to improve the processing utilization rate of the crystal silicon material 3 and reduce the loss, thereby reducing the use cost of the crystal silicon material 3. One of the structures includes:

[0041] As shown in Figures 2-5 , the feeding part is used to lift the crystal silicon material 3 and transfer the crystal silicon material 3 to the transmission part.

[0042] The transmission part is used to receive the crystal silicon material 3 and continuously transport the crystal silicon material 3 into the furnace body 1. The transmission part includes a supporting table 2 used to support the crystal silicon material 3. The supporting table 2 is provided with a concave-convex structure used to keep the position of the crystal silicon material 3 stable. The supporting table 2 is driven by a horizontal conveying mechanism and forms a circulating conveying on the horizontal plane.

[0043] As shown in Figures 6-10 , the discharging part is arranged at the end of the transmission part and is used to receive the crystal silicon material 3.

[0044] The cold immersion part cooperates with the discharging part, receives the silicon material 3, and immerses the silicon material 3 in the cold immersion pool 16 for cooling. After the cooling, the silicon material 3 is lifted and discharged.

[0045] The transmission structure of the silicon material 3 disclosed in the embodiment transports the normal-temperature silicon material 3 to the feeding port of the furnace body 1 through the feeding part and sends the silicon material 3 to the furnace hearth of the furnace body 1 through the transmission part. The silicon material 3 is heated to a predetermined temperature and is sent out from the tail part of the furnace body 1. When the silicon material 3 is sent out, it is sent to the cold immersion part through the discharging part to realize the cooling treatment of the silicon material 3. After the cooling treatment, cracks are generated in the silicon material 3 due to the structural stress. After subsequent treatment, the silicon material 3 with smaller particle size can be obtained. The concave-convex structure is arranged on the supporting table 2, which can transport disc-shaped material, block-shaped material, and residual material, thereby improving the compatibility of use.

[0046] Preferably, the positive pressure air supply structure is formed in the furnace body 1. Nitrogen or other inert gas is supplied into the furnace body 1, so that the air pressure in the furnace body 1 is higher than the external air pressure. The gas in the furnace body 1 flows outward from the feeding end of the furnace body 1, thereby avoiding the air entering the feeding end to affect the gas environment in the furnace body 1.

[0047] In the embodiment, the feeding part and the discharging part cooperate with the transmission part to realize the transportation of the silicon material 3. The cooperation structure can adopt various forms, which are not uniquely limited. In the embodiment, one feasible selection is optimized and adopted. The feeding part and the discharging part both include the first lifting mechanism 11. The first lifting mechanism 11 is provided with the carrying part 12. The carrying part 12 is provided with the placing part 1201 for placing the silicon material 3. The first lifting mechanism 11 drives the carrying part 12 to ascend or descend. The first rotating mechanism drives the carrying part 12 to rotate to realize the rotation switching. After the rotation switching of the carrying part 12, the silicon material 3 is aligned with the supporting table 2. The first lifting mechanism 11 is lowered to place the silicon material 3 on the supporting table 2 or the cold immersion part. When this scheme is adopted, the first lifting mechanism 11 can adopt a lifting rod or a lifting frame. The first rotating mechanism can be arranged below the first lifting mechanism 11 and drives the whole first lifting mechanism 11 to rotate. At the same time, the carrying part 12 rotates with the first lifting mechanism 11 and realizes the position switching of 180°. In other schemes, the first rotating mechanism can be arranged on the top of the first lifting mechanism 11 and drives the carrying part 12 to rotate to realize the switching. The first rotating mechanism can be driven by a motor cooperating with a transmission gear. A sleeve structure or a rotating disc structure is used as a rotating seat to drive the first lifting mechanism 11 or the carrying part 12 to rotate.

[0048] In the embodiment, the feeding part needs to smoothly transfer the crystal silicon material 3 to avoid rolling when placing the crystal silicon material 3 on the conveying part. The smooth transfer can be achieved by various structures. The embodiment is optimized and one feasible option is adopted. The feeding part further comprises a carrier table 13 for placing the crystal silicon material 3. The conveying part 12 is provided with an open slot. The width of the carrier table 13 is less than the width of the open slot and the carrier table 13 is located inside the open slot. When the conveying part 12 is lifted from below the carrier table 13, the crystal silicon material 3 on the carrier table 13 is picked up and continuously lifted. The width of the supporting table 2 is less than the width of the open slot. When the conveying part 12 is lowered to below the supporting table 2, the crystal silicon material 3 is placed on the supporting table 2, or when the conveying part 12 is lowered to below the cold immersion part, the crystal silicon material 3 is placed on the cold immersion part. When this scheme is adopted, the supporting table 2 can also be provided with a structure for positioning the crystal silicon material 3, such as a positioning slot structure. At the same time, a corresponding positioning arc or positioning protrusion structure is arranged on the open slot to keep the crystal silicon material 3 stable during the conveying and transferring process.

[0049] The horizontal conveying mechanism conveys the crystal silicon material 3 into and out of the furnace body 1 from a single direction. However, the horizontal conveying mechanism forms a circulating conveying structure, which can be achieved by various structures and is not uniquely limited. The embodiment is optimized and one feasible option is adopted. The horizontal conveying mechanism comprises a circulating track 10. A plurality of supporting frames 6 for connecting the supporting table 2 are arranged on the circulating track 10. The driving assembly drives the supporting frame 6 to circulate along the circulating track 10. When this scheme is adopted, the supporting frame 6 travels along the circulating track 10 by cooperating with the circulating track 10 through the traveling wheels 9. The driving assembly forms a closed circulating traction in the horizontal direction, so that the supporting frame 6 also forms a closed circulating travel track.

[0050] The structure of the driving assembly is not uniquely limited. The embodiment is optimized and one feasible option is adopted. The driving assembly comprises at least two driving shafts 4. The driving shaft 4 is provided with a rotating wheel 5 and at least one driving wheel is arranged on the driving shaft 4. The other driving shaft 4 is provided with a driven wheel. The driving wheel and the driven wheel are connected by a transmission member. The supporting frame 6 is connected with the transmission member and moves synchronously with the transmission member. When this scheme is adopted, the transmission member can adopt a transmission chain or a transmission belt. The driving shaft 4 is longitudinally arranged. A plurality of rotating wheels 5 can be arranged on the driving shaft 4 in the longitudinal direction and synchronously driven, which can improve the stability of transmission.

[0051] In some embodiments, the horizontal conveying mechanism is not limited to a specific configuration, and in the present embodiment, one feasible option is adopted: the horizontal conveying mechanism is symmetrically arranged on both sides of the traveling direction of the silicon material 3. In this case, the horizontal conveying mechanisms on both sides are synchronized to make the support tables 2 travel in pairs, so that the silicon material can be more stably conveyed and the conveying efficiency is improved, and more sizes of silicon materials can be processed.

[0052] In the present embodiment, the support table 2 can be optimized and one feasible option is adopted: the support table 2 includes a support surface for placing the silicon material 3, and the concave-convex structure is arranged on the support surface, and the concave-convex structure includes V-shaped concave-convex grooves. In this case, the width of the V-shaped concave-convex grooves is smaller than the width of the support surface, which is more stable when placing the rod material, and can also be compatible when placing residual materials or fine materials, especially when placing fine materials, which can be placed in a container such as a supporting tray.

[0053] The gas environment in the furnace body 1 can affect the properties of the silicon material 3 during heating. In order to avoid chemical reactions affecting the properties of the material, the gas environment needs to be controlled. In the present embodiment, one feasible option is adopted: the furnace body 1 includes a mounting cavity 101 for mounting the horizontal conveying mechanism, and a sealing ring groove 8 is arranged in the mounting cavity 101. The sealing ring groove 8 is arranged along the traveling path of the support frame 6 and is located outside the driving assembly, and a sealing plate 7 is arranged from the top of the mounting cavity 101 to extend downward into the sealing ring groove 8 and be immersed in the sealing liquid. The sealing ring groove 8 and the sealing plate 7 form a sealed isolation structure to prevent gas from the driving assembly side from entering the furnace body 1; one end of the support frame 6 is connected to the driving assembly, and the other end enters from the inside of the sealing ring groove 8 and is bent around under the sealing plate 7 and then protrudes from the outside of the sealing ring groove 8. In this case, air isolation is achieved by the cooperation of the sealing ring groove 8 and the sealing plate 7, and the support frame 6 can normally operate by passing through the sealing structure formed by the sealing ring groove 8 and the sealing plate 7. Only the amount of sealing liquid in the sealing ring groove 8 needs to be ensured to meet the sealing requirements, thereby avoiding the entry of external air into the furnace body 1 to cause oxidation of the silicon material 3.

[0054] Preferably, in the present embodiment, the support frame 6 is configured as an S-shaped structure that reciprocally winds around.

[0055] The cold-dipping part cools the heated silicon material 3 rapidly, forms cracks in the silicon material 3, and facilitates processing to obtain smaller material. The structure of the cold-dipping part can be implemented in various schemes, which are not uniquely limited. Here, one feasible option is optimized and proposed: the cold-dipping part includes a second lifting mechanism 14 connected to at least two cold-dipping material tables 15 for placing the silicon material 3. The cold-dipping material tables 15 are provided with a placing part similar to the placing part 1201. The second lifting mechanism 14 is also connected to and driven to change position by a second rotating mechanism. When this scheme is adopted, the second lifting mechanism 14 is used to carry the silicon material 3 and is lifted into the cold-dipping pool 16 for rapid cooling. The cooled silicon material 3 is rotated to the delivery position and is lifted and delivered.

[0056] During the processes of discharging and rapid cooling, the gas environment needs to be suitable to avoid oxidation reaction of the silicon material 3 at high temperature with oxygen, which leads to denaturation. In this embodiment, one feasible option is optimized and adopted: the discharging part and the cold-dipping part are provided with a sealed box 17 at the joint. One port of the sealed box 17 is communicated to the furnace body 1, and the other port is communicated to the cold-dipping pool 16 and is immersed in the cold-dipping liquid. When this scheme is adopted, the furnace body 1, the sealed box 17, and the cold-dipping pool 16 are communicated to form a sealed space and realize the transfer of the silicon material 3.

[0057] The above is the implementation mode listed in this embodiment, but this embodiment is not limited to the above optional implementation mode. Those skilled in the art can obtain other various implementation modes by arbitrarily combining the above modes. Anyone can obtain other various forms of implementation modes under the inspiration of this embodiment. The above specific implementation mode should not be understood as a limitation on the protection scope of this embodiment. The protection scope of this embodiment should be defined by the claims.

Claims

1. A material transmission structure of a crystalline silicon material cold crushing and heating apparatus, characterized by, The application relates to a silicon material conveying device. The upper feeding part is used for lifting the silicon material (3) and transferring the silicon material (3) to the conveying part. The conveying part is used for receiving the silicon material (3) and continuously conveying the silicon material (3) into the furnace body (1), the conveying part comprises a supporting table (2) used for supporting the silicon material (3), the supporting table (2) is provided with a concave-convex structure used for keeping the position of the silicon material (3) stable, the supporting table (2) is driven by a horizontal conveying mechanism and forms a circulating conveying on a horizontal plane. The lower feeding part is arranged at the end of the conveying part and is used for receiving the silicon material (3). The cooling part is matched with the lower feeding part and is used for receiving the silicon material (3) and immersing the silicon material (3) into a cooling pool (16) to cool the silicon material (3), and the silicon material (3) is lifted and output after cooling. The upper feeding part and the lower feeding part both comprise a first lifting mechanism (11), and the first lifting mechanism (11) is provided with a carrying part (12). The upper feeding part further comprises a carrying table (13) used for placing the silicon material (3), the silicon material (3) on the carrying table (13) is picked up and continuously lifted when the carrying part (12) rises from below the carrying table (13); the silicon material (3) is placed when the carrying part (12) is aligned with the supporting table (2) and is lowered below the supporting table, or the silicon material (3) is placed when the carrying part (12) is aligned with the cooling part and is lowered below the cooling part. The carrying part (12) is provided with an open slot, the width of the carrying table (13) is smaller than the width of the open slot, and the carrying table (13) is located on the inside of the open slot, and the width of the supporting table (2) is smaller than the width of the open slot.

2. The material transmission structure of the silicon material cold crushing and heating equipment according to claim 1, characterized in that: The carrying part (12) is provided with a placing part (1201) used for placing the silicon material (3); the first lifting mechanism (11) is used for driving the carrying part (12) to rise or fall, and the first rotating mechanism is used for driving the carrying part (12) to rotate to realize rotating transposition, the silicon material (3) is aligned with the supporting table (2) after the rotating transposition of the carrying part (12), and the silicon material (3) is placed on the supporting table (2) or the cooling part through the falling of the first lifting mechanism (11).

3. The material transmission structure of the silicon material cold crushing and heating equipment according to claim 1, characterized in that: The horizontal conveying mechanism comprises a circulating track (10), a plurality of supporting frames (6) used for connecting the supporting table (2) are matched and arranged on the circulating track (10); and a driving assembly is further arranged, the driving assembly drives the supporting frame (6) to circulate along the circulating track (10).

4. The material transmission structure of the silicon material cold crushing and heating equipment according to claim 3, characterized in that: The driving assembly comprises at least two driving shafts (4), the driving shaft (4) is provided with a rotating wheel (5), at least one driving shaft (4) is provided with a driving wheel, and the other driving shaft (4) is provided with a driven wheel, a transmission member is connected between the driving wheel and the driven wheel, and the supporting frame (6) is connected with the transmission member and moves synchronously with the transmission member.

5. The material transmission structure of the silicon material cold crushing and heating equipment according to claim 3 or 4, characterized in that: The horizontal conveying mechanism is arranged in mirror image on both sides of the silicon material (3) in the advancing direction.

6. The material transmission structure of the silicon material cold crushing and heating equipment according to claim 1 or 3, characterized in that: The supporting table (2) comprises a supporting surface used for placing the silicon material (3), and the concave-convex structure is arranged on the supporting surface and comprises a V-shaped concave-convex groove.

7. The material transmission structure of the silicon material cold crushing and heating equipment according to claim 3, characterized in that: The furnace body (1) comprises a mounting cavity (101) for mounting a horizontal conveying mechanism, a sealing ring groove (8) is arranged in the mounting cavity (101), the sealing ring groove (8) is arranged along the running path of the support frame (6) and is located outside the driving assembly, and a sealing plate (7) extending downward from the top of the mounting cavity (101) into the sealing ring groove (8) and immersed in the sealing liquid is arranged, the sealing ring groove (8) and the sealing plate (7) form a sealed isolation structure to prevent gas on the side of the driving assembly from entering the internal hearth of the furnace body (1); one end of the support frame (6) is connected to the driving assembly, the other end enters from the inside of the sealing ring groove (8), is bent around below the sealing plate (7), and then protrudes out from the outside of the sealing ring groove (8).

8. The material transmission structure of the silicon material cold crushing and heating equipment according to claim 1, characterized in that: The cold immersion part comprises a second lifting mechanism (14) connected to at least two cold immersion material tables (15) for placing the silicon material (3), and a second rotating mechanism connected to and driven by the second lifting mechanism (14) to change the position.

9. The material transmission structure of the silicon material cold crushing and heating equipment according to claim 1 or 8, characterized in that: The sealing box (17) is arranged at the joint of the discharging part and the cold immersion part, one end of the sealing box (17) is communicated to the furnace body (1), and the other end is communicated to the cold immersion pool (16) and immersed in the cold immersion liquid.

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