Substrate processing apparatus and substrate processing method

Abstract

This invention relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes: a processing tank storing a processing liquid; a chamber surrounding the processing tank; a solvent vapor nozzle supplying solvent vapor into the chamber; a cleaning liquid nozzle supplying cleaning liquid into the chamber; and a control unit. The control unit performs an immersion process and a drying process at predetermined intervals. The immersion process involves immersing the substrate in the processing liquid stored in the processing tank, and the drying process uses solvent vapor supplied from the solvent vapor nozzle to dry the substrate, which has been processed in the processing liquid and then removed from the processing tank. The control unit supplies cleaning liquid into the chamber from the cleaning liquid nozzle and immerses the processing tank in the cleaning liquid stored in the chamber, thereby performing a chamber cleaning process to clean the chamber, including the outer wall of the processing tank.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method for processing substrates. Examples of substrates include: semiconductor substrates, substrates for FPDs (Flat Panel Displays), glass substrates for photomasks, substrates for optical discs, substrates for magnetic disks, ceramic substrates, and substrates for solar cells. Examples of FPDs include: liquid crystal display devices and organic EL (electroluminescence) display devices. Background Technology

[0002] The substrate processing apparatus includes: a processing tank for storing a processing liquid such as pure water, a chamber surrounding the processing tank, a lifter for holding the substrate, a nitrogen nozzle for supplying nitrogen gas into the chamber, a solvent nozzle for supplying isopropyl alcohol (IPA) vapor into the chamber, and an exhaust pump for venting and depressurizing the chamber (see, for example, Japanese Patent Application Publication No. 2015-070148).

[0003] The substrate processing apparatus operates, for example, as follows (see, for example, Japanese Patent Application Publication No. 2015-070148): A lifter immerses the substrate in a processing liquid within a processing tank. Then, IPA vapor is supplied from a solvent nozzle to create an atmosphere of IPA vapor within the chamber. Next, the lifter removes the substrate from the processing liquid within the tank and moves the substrate to a drying position within the chamber. Then, an exhaust pump depressurizes the chamber. This causes the active IPA or similar substances adhering to the substrate to evaporate, thus drying the substrate. Then, the exhaust pump is stopped, and nitrogen is supplied from a nitrogen nozzle to restore atmospheric pressure within the chamber.

[0004] Japanese Patent Application Publication No. 2008-251779 discloses a neutralization cleaning apparatus for a substrate processing device, comprising a solution tank for storing "acidic" or "alkaline" solutions and a chamber for housing the solution tank. The neutralization cleaning apparatus includes a pure water nozzle, a circulation nozzle, and circulation piping. The circulation piping is connected to the circulation nozzle. The pure water nozzle and circulation nozzle are each positioned between the inner wall of the chamber and the outer wall of the solution tank. The neutralization cleaning apparatus stores pure water inside the chamber via the pure water nozzle, and then circulates the stored pure water inside the chamber via the circulation piping. This causes the solution components adhering to the outer wall of the solution tank to be removed from the adhering surface due to the flow of pure water.

[0005] Japanese Patent Application Publication No. 2010-093097 discloses a method of using a handheld sprayer to supply pure water into a chamber to rinse away the condensate of dilute hydrochloric acid vapor.

[0006] Japanese Patent Application Publication No. 2018-056155 discloses a process for performing a dehydration treatment on the surface of a substrate. Additionally, Japanese Patent Application Publication No. 2008-004874 discloses a substrate processing apparatus capable of discharging the processing liquid from a chamber even under reduced pressure solvent atmosphere. Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] However, existing substrate processing apparatuses have the following problems. Due to the use of the apparatus, tiny particles accumulate in the lower part of the chamber (including the outer wall of the processing tank), causing contamination. If the lower part of the chamber is contaminated, for example, when nitrogen is supplied, the nitrogen will cause the tiny particles in the lower part of the chamber to be stirred up, resulting in the problem of these tiny particles adhering to the substrate.

[0009] The present invention addresses the above-mentioned situation and aims to provide a substrate processing apparatus and a substrate processing method that can prevent microparticles from adhering to the substrate.

[0010] Solution for solving the problem

[0011] To achieve this objective, the present invention adopts the following structure. Specifically, the substrate processing apparatus of the present invention comprises: a processing tank storing a processing liquid; a chamber surrounding the processing tank; a solvent vapor nozzle supplying solvent vapor into the chamber; a cleaning liquid nozzle supplying cleaning liquid into the chamber; and a control unit that performs immersion processing and drying processing at predetermined intervals. The immersion processing involves immersing the substrate in the processing liquid stored in the processing tank, and the drying processing uses the solvent vapor supplied from the solvent vapor nozzle to dry the substrate, which has been processed in the processing liquid and lifted from the processing tank. The control unit supplies cleaning liquid into the chamber from the cleaning liquid nozzle and immerses the processing tank in the cleaning liquid stored in the chamber, thereby performing a chamber cleaning process to clean the chamber, including the outer wall of the processing tank.

[0012] According to the substrate processing apparatus of the present invention, cleaning liquid is supplied from a cleaning liquid nozzle into a chamber, causing a processing tank to be immersed in the cleaning liquid stored in the chamber, thereby performing a chamber cleaning process that cleans the chamber, including the outer wall of the processing tank. This allows for the cleaning of not only the outer wall of the processing tank but also the cleaning of minute particles adhering to the side and bottom walls of the chamber. Therefore, it prevents minute particles in the lower part of the chamber from being stirred up and adhering to the substrate.

[0013] Furthermore, in the aforementioned substrate processing apparatus, it is preferable that the control unit performs the chamber cleaning process after the immersion process, and the control unit performs the drying process after the chamber cleaning process. This allows for chamber cleaning to be performed during a series of substrate processing steps.

[0014] In addition, preferably, the substrate processing apparatus described above also includes a water-repellent vapor nozzle that supplies water-repellent vapor into the chamber. After the immersion process is performed, the control unit performs a water-repellent vapor supply process to supply water-repellent vapor from the water-repellent vapor nozzle into the chamber in order to make the substrate water-repellent. After the water-repellent vapor supply process is performed, the control unit performs a chamber cleaning process.

[0015] The process of supplying vapor to a water-repellent agent to make the substrate water-repellent generates a large number of tiny particles from the agent. These tiny particles accumulate in the lower part of the chamber. Furthermore, there is a problem that these tiny particles in the lower part of the chamber can be stirred up and adhere to the substrate. According to the present invention, the cleaning process within the chamber can be performed during a series of substrate processing steps. Therefore, it is possible to prevent the tiny particles (including those from the water-repellent agent) in the lower part of the chamber from being stirred up and adhering to the substrate.

[0016] In addition, preferably, the above-described substrate processing apparatus further includes an exhaust pump that exhausts air from the chamber, a cleaning fluid nozzle disposed in the lower part of the chamber and supplies the cleaning fluid into the chamber, and a control unit performing chamber cleaning processing while the chamber is depressurized by the exhaust pump.

[0017] Therefore, cleaning within the chamber can be performed while the chamber is under reduced pressure using an exhaust pump. However, there is a problem where cleaning fluid overflows from the treatment tank while being supplied to it, and is stored in the chamber. Under reduced pressure within the chamber, mist can easily form from the stored cleaning fluid, and this mist can adhere to the substrate. Furthermore, the adhering mist may adversely affect the substrate. According to the present invention, the cleaning fluid can be directly supplied into the chamber from a nozzle located at the bottom of the chamber, thus keeping the cleaning fluid away from the substrate. Therefore, the adhesion of mist to the substrate can be suppressed.

[0018] Furthermore, in the aforementioned substrate processing apparatus, it is preferable that the exhaust pump vents air into the chamber through an exhaust port located on the side wall of the chamber adjacent to the processing tank, and that the control unit performs the chamber cleaning process while venting air into the chamber using the exhaust pump and depressurizing the chamber. Even if mist is generated from the cleaning fluid, it can be discharged from the exhaust port by the exhaust pump.

[0019] Furthermore, preferably, the aforementioned substrate processing apparatus also includes a shielding plate disposed between the outer wall of the processing tank and the inner wall of the chamber, shielding the atmosphere between the upper and lower parts of the chamber, and the shielding plate has an opening allowing processing liquid overflowing from the processing tank to flow into the lower part of the chamber. Because of the shielding plate, even if mist is generated from the cleaning liquid stored in the chamber, the movement of mist from the lower to the upper part of the chamber can be suppressed. Additionally, the movement of small particles raised from the lower to the upper part of the chamber can be suppressed.

[0020] Furthermore, in the aforementioned substrate processing apparatus, it is preferable that the cleaning fluid nozzle is located at the bottom of the chamber and overlaps with the processing tank when viewed from above. This allows the cleaning fluid nozzle to be concealed within the processing tank. Additionally, since the substrate is further away from the upper part of the chamber, even if mist is generated, adhesion to the substrate can be suppressed.

[0021] Furthermore, in the aforementioned substrate processing apparatus, it is preferable that the control unit performs the chamber cleaning process while supplying solvent vapor into the chamber from the solvent vapor nozzle. This allows the chamber cleaning process to be performed in parallel with the process of supplying solvent vapor into the chamber, thereby enabling efficient substrate processing.

[0022] Furthermore, in the aforementioned substrate processing apparatus, it is preferable that the control unit, while depressurizing the chamber using the exhaust pump, performs a discharge process to discharge the cleaning fluid from the outlet provided in the chamber, and the control unit repeats the chamber cleaning process and the discharge process a preset number of times. The more times the chamber cleaning process is repeated, the better the cleaning of the chamber can be achieved.

[0023] Furthermore, preferably, the substrate processing apparatus described above also includes an inert gas nozzle that supplies inert gas into the chamber. After the drying process is performed, the control unit supplies inert gas into the chamber from the inert gas nozzle, thereby restoring the chamber from a depressurized state to atmospheric pressure. By performing a cleaning process within the chamber, the amount of fine particles stirred up by the inert gas can be reduced.

[0024] Furthermore, in the aforementioned substrate processing apparatus, it is preferable that the cleaning fluid nozzle is arranged facing the outer wall of the processing tank, and that the control unit, while depressurizing the chamber using the exhaust pump, causes the cleaning fluid to contact the outer wall of the processing tank and supplies the cleaning fluid into the chamber from the cleaning fluid nozzle.

[0025] Because more liquid flows through the bottom surface of the chamber, it is relatively difficult for microparticles to accumulate there. However, the outer wall of the treatment tank, for example, is a part where liquid does not flow easily, even if floating microparticles adhere to it, thus causing microparticles to accumulate. By contacting this part with the cleaning fluid and storing the cleaning fluid within the chamber, it is easy to remove the microparticles adhering to the outer wall of the treatment tank.

[0026] Furthermore, in the aforementioned substrate processing apparatus, it is preferable to also include a nozzle cover, which is disposed at the bottom of the chamber opposite the upward-facing outlet of the cleaning fluid nozzle. The nozzle cover includes a top wall and a plurality of side walls connected to the top wall and having orifices for the flow of the cleaning fluid. This suppresses the diffusion of mist and stores the cleaning fluid within the chamber.

[0027] Furthermore, in the aforementioned substrate processing apparatus, it is preferable that the cleaning fluid nozzle is disposed at the bottom of the processing tank and supplies the cleaning fluid into the processing tank. The control unit supplies the cleaning fluid into the processing tank from the cleaning fluid nozzle at atmospheric pressure within the chamber, stores the cleaning fluid overflowing from the processing tank in the chamber, and immerses the processing tank in the cleaning fluid stored in the chamber, thereby performing a chamber cleaning process that cleans the chamber, including the outer wall of the processing tank. This allows for chamber cleaning to be performed at atmospheric pressure within the chamber. Additionally, since cleaning fluid is also supplied to the processing tank, the cleaning of the processing tank and the chamber cleaning can be performed in parallel.

[0028] Furthermore, in the aforementioned substrate processing apparatus, it is preferable that the control unit performs the chamber cleaning process between two consecutive series of substrate processing operations whenever a series of substrate processing operations, including the immersion process and the drying process, is performed on a predetermined number of substrates or a predetermined batch number of substrates. This allows for chamber cleaning between two consecutive series of substrate processing operations whenever a series of substrate processing operations are performed on a predetermined number of substrates or a predetermined batch number of substrates.

[0029] Furthermore, in the aforementioned substrate processing apparatus, preferably, the cleaning fluid nozzle is disposed at the bottom of the processing tank and supplies the cleaning fluid into the processing tank. The control unit supplies the cleaning fluid into the processing tank from the cleaning fluid nozzle at atmospheric pressure within the chamber, and stores the cleaning fluid overflowing from the processing tank in the chamber. This allows for simultaneous cleaning of the processing tank and the chamber.

[0030] Furthermore, the substrate processing method of the present invention is a substrate processing apparatus method for a substrate processing device, the substrate processing device comprising a processing tank for storing a processing liquid and a chamber surrounding the processing tank, the substrate processing method comprising: an immersion step in which a substrate is immersed in the processing liquid stored in the processing tank for a predetermined period; a drying step in which the substrate, which has been treated in the processing liquid and lifted from the processing tank, is dried using solvent vapor supplied from a solvent vapor nozzle; and a chamber cleaning step in which cleaning liquid is supplied into the chamber from a cleaning liquid nozzle and the processing tank is immersed in the cleaning liquid stored in the chamber, thereby cleaning the chamber including the outer wall of the processing tank.

[0031] Invention Effects

[0032] The substrate processing apparatus and substrate processing method according to the present invention can prevent microparticles from adhering to the substrate. Attached Figure Description

[0033] Although some currently appropriate methods have been illustrated for the purpose of illustrating the invention, the invention is not limited to the illustrated structures and solutions.

[0034] Figure 1 This is a schematic structural diagram of the substrate processing apparatus of Example 1.

[0035] Figure 2 This is a diagram used to illustrate the operation of the substrate processing apparatus of Embodiment 1.

[0036] Figure 3 This is a timing diagram showing the operation of the substrate processing apparatus of Embodiment 1.

[0037] Figure 4A This is a diagram used to illustrate the problem of fog. Figure 4B This is a diagram used to illustrate the effect of the substrate processing apparatus 1.

[0038] Figure 5 This is a schematic structural diagram of the substrate processing apparatus of Example 2.

[0039] Figure 6 This is a diagram used to illustrate the operation of the substrate processing apparatus in Embodiment 2.

[0040] Figure 7 This is a timing diagram showing the operation of the substrate processing apparatus in Embodiment 2.

[0041] Figure 8 This is a diagram used to illustrate the operation of the substrate processing apparatus in Embodiment 3.

[0042] Figure 9 This is a timing diagram showing the operation (a series of substrate processing) of the substrate processing apparatus in Embodiment 3.

[0043] Figure 10 This is a timing diagram showing the operation (cleaning within the chamber) of the substrate processing apparatus in Embodiment 3.

[0044] Figure 11 This is a diagram showing a modified example of a chamber equipped with a nozzle cover.

[0045] Figure 12 This is a diagram showing a modified example of a chamber equipped with two cleaning fluid nozzles.

[0046] Figure 13 This is a diagram showing a modified example of a chamber equipped with two cleaning fluid nozzles.

[0047] In the picture:

[0048] 1—Substrate processing apparatus; 2—Processing tank; 3—Cavity; 5—Ejection pipe; 14—QDR valve; 16—Cleaning fluid nozzle; 25—Inert gas nozzle; 27—Solvent vapor nozzle; 29—Water repellent vapor nozzle; 43—Exhaust port; 47—Exhaust pump; 63—Shielding plate; G1, G2—Gap. Detailed Implementation

[0049] [Example 1]

[0050] The following description refers to Embodiment 1 of the present invention. Figure 1 This is a schematic structural diagram of the substrate processing apparatus of Example 1.

[0051] (1) Structure of substrate processing device 1

[0052] Reference Figure 1 The substrate processing apparatus 1 includes: a processing tank 2 for storing processing liquid, a chamber 3 surrounding the processing tank 2, and a lifter 4. The processing tank 2 is configured to accommodate multiple substrates W in an upright (vertical) position. The processing tank 2 is positioned away from the bottom surface of the chamber 3.

[0053] The lifting device 4 includes: a holding member 4A for holding multiple substrates W arranged at equal intervals in the Y direction in an upright posture, and a lifting mechanism 4B for raising and lowering the holding member 4A in the vertical direction (Z direction). The lifting mechanism 4B includes, for example, an electric motor or a cylinder. The lifting mechanism 4B raises and lowers the substrates W between the following positions: a "standby position H1" above the chamber 3, a "drying position H2" above the processing tank 2 and inside the chamber 3, and a "processing position H3" inside the processing tank 2.

[0054] Two ejector pipes 5 are provided at the bottom of the processing tank 2 to supply processing liquid into the processing tank 2. Each ejector pipe 5 is formed in a straight line along the Y direction (the direction of the paper's depth towards the front) where multiple substrates W are neatly arranged. Each ejector pipe 5 has multiple discharge ports arranged in the Y direction.

[0055] Each nozzle 5 is connected to the front end of the treatment fluid piping 7. The base of the treatment fluid piping 7 is connected to the treatment fluid supply source 9. The treatment fluid supply source 9 supplies pure water, which serves as the treatment fluid, to the treatment fluid piping 7. For example, deionized water (DIW) can be used as the pure water. An on / off valve V1 is installed on the treatment fluid piping 7. The on / off valve V1 supplies and stops the supply of pure water. Specifically, when the on / off valve V1 is open, pure water is supplied to the treatment tank 2 from both nozzles 5. Conversely, when the on / off valve V1 is closed, the supply of pure water from both nozzles 5 is stopped.

[0056] Additionally, a second processing fluid pipe 11 is connected to the front end of the processing fluid pipe 7 between the two nozzles 5 and the on / off valve V1. The base of the second processing fluid pipe 11 is connected to a second processing fluid supply source 13. The second processing fluid supply source 13 supplies isopropanol solution diluted with pure water (e.g., DIW) (i.e., a mixture of isopropanol and pure water) as the second processing fluid to the second processing fluid pipe 11. Furthermore, the isopropanol solution diluted with pure water will be referred to as "diluted IPA solution" below. An on / off valve V2 is provided on the second processing fluid pipe 11. The on / off valve V2 supplies and stops the supply of diluted IPA solution. The two nozzles 5 are configured to selectively supply pure water and diluted IPA solution using the two on / off valves V1 and V2.

[0057] A QDR valve (on / off valve) 14 is installed at the bottom of the treatment tank 2 to discharge the treatment liquid in the treatment tank 2 to the bottom surface of the chamber 3. When the QDR valve 14 is in the open state, the treatment liquid in the treatment tank 2 is rapidly discharged to the bottom surface of the chamber 3. When the QDR valve 14 is in the closed state, the treatment liquid can be stored in the treatment tank 2.

[0058] Two cleaning fluid nozzles 16 are provided at the bottom of chamber 3. The two cleaning fluid nozzles 16 are positioned to overlap with the treatment tank 2 when viewed from above. Alternatively, they can be positioned so that the two cleaning fluid nozzles 16 completely overlap with the treatment tank 2 when viewed from above. The two cleaning fluid nozzles 16 directly supply cleaning fluid into chamber 3. Each cleaning fluid nozzle 16 is constructed similarly to the spray pipe 5. That is, each cleaning fluid nozzle 16 is a straight pipe formed along the Y direction. Each cleaning fluid nozzle 16 has multiple discharge ports arranged in the Y direction.

[0059] Two cleaning fluid nozzles 16 are connected to the front end of a cleaning fluid piping 18. The base of the cleaning fluid piping 18 is connected to a cleaning fluid supply source 20. The cleaning fluid supply source 20 supplies pure water, diluted IPA solution, or hydrogen peroxide diluted with pure water (e.g., DIW) (hereinafter referred to as "diluted H2O2 solution") to the cleaning fluid piping 18 as the cleaning fluid. An on / off valve V3 is provided on the cleaning fluid piping 18. The on / off valve V3 controls the supply and stop of the cleaning fluid.

[0060] The chamber 3 houses the processing tank 2. A freely opening and closing upper cover 23 is provided on the upper surface of the chamber 3. Two inert gas nozzles 25, two solvent vapor nozzles 27, and two water-repellent vapor nozzles 29 are provided inside the chamber 3. Between the upper cover 23 and the processing tank 2, the two inert gas nozzles 25, two solvent vapor nozzles 27, and two water-repellent vapor nozzles 29 are arranged sequentially from top to bottom.

[0061] The six nozzles 25, 27, and 29 are arranged in a straight line extending along the Y direction. Each of the two inert gas nozzles 25 has multiple outlets (not shown) arranged along the Y direction for discharging inert gas. Similarly, the four nozzles 27 and 29 also have multiple outlets.

[0062] Two inert gas nozzles 25 each supply inert gas into chamber 3. Each inert gas nozzle 25 is connected to the front end of supply pipe 31. The base end of supply pipe 31 is connected to inert gas supply source 33. Inert gas supply source 33 supplies inert gas, such as nitrogen, to supply pipe 31. An on / off valve V4 is provided on supply pipe 31. On / off valve V4 supplies and stops the supply of inert gas.

[0063] Two solvent vapor nozzles 27 each supply solvent vapor into chamber 3. Each solvent vapor nozzle 27 is connected to the front end of supply pipe 35. The base end of supply pipe 35 is connected to solvent vapor supply source 37. Solvent vapor supply source 37 supplies solvent vapor, such as isopropanol vapor (hereinafter referred to as "IPA vapor"), to supply pipe 35. Solvent vapor can be generated by evaporating liquid solvent using a heater. Solvent vapor may include an inert gas (nitrogen) as a carrier gas. An on / off valve V5 is provided on supply pipe 35. On / off valve V5 supplies and stops the supply of solvent vapor.

[0064] Two water-repellent vapor nozzles 29 each supply water-repellent vapor into chamber 3. Each water-repellent vapor nozzle 29 is connected to the front end of supply pipe 39. The base end of supply pipe 39 is connected to water-repellent vapor supply source 41. Water-repellent vapor supply source 41 delivers water-repellent vapor to supply pipe 39. Water-repellent vapor can be generated by evaporating liquid water-repellent using a heater. Water-repellent vapor may include an inert gas (nitrogen) as a carrier gas. An on / off valve V6 is provided on supply pipe 39. The on / off valve V6 controls the supply and cessation of water-repellent vapor supply.

[0065] Water-repellent agents (silylating agents) are silicone-based water-repellent agents that dehydrate silicone itself and silicone-containing compounds, or metal-based water-repellent agents that dehydrate metal itself and metal-containing compounds. Water-repellent agents are preferably used in a state of dilution with a solvent that is compatible with hydrophilic organic solvents such as IPA.

[0066] Metal-based water-repellent agents include, for example, at least one of an amine having a hydrophobic group and an organosilicone compound.

[0067] Silicone-based water-repellent agents are, for example, silane coupling agents. Silane coupling agents include, for example, at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and non-chlorine-based water-repellent agents.

[0068] An exhaust port 43 is provided on the side wall of chamber 3. The exhaust port 43 is positioned at a height opposite to the outer surface 2A of the processing tank 2. In other words, the exhaust port 43 is positioned at a height between the shielding plate 63 (described later) and the lower surface 2B of the processing tank 2. This allows for the storage of, for example, cleaning fluid at a position lower than the exhaust port 43, and the venting of gas from the chamber 3 through the exhaust port 43. An exhaust pipe 45 is connected to the exhaust port 43. An on / off valve V7 and an exhaust pump 47 are sequentially provided on the exhaust pipe 45 from the exhaust port 43 side. The exhaust pump 47 vents gas from the chamber 3, thereby reducing the pressure within the chamber 3.

[0069] In addition, a drain outlet 49 is provided on the bottom wall of chamber 3. The upper end of a drain pipe 51 is connected to the drain outlet 49. The lower end of the drain pipe 51 is connected to the upper outer wall of the drain tank 53. An on / off valve V8 is provided on the drain pipe 51. The on / off valve V8 is used to transport the processing liquid or cleaning liquid in chamber 3 to the drain tank 53. The drain tank 53 is a container for storing the processing liquid discharged from chamber 3. An exhaust pipe 55 is connected to the drain tank 53. An on / off valve V9 and an exhaust pump 57 are sequentially provided on the exhaust pipe 55 from the drain tank 53 side.

[0070] Additionally, a gas pipe 59 and a discharge pipe 61 are connected to the drain tank 53. An on / off valve V11 is installed on the gas pipe 59. An on / off valve V12 is installed on the discharge pipe 61. The gas pipe 59 supplies inert gas (e.g., nitrogen) or external gas to the drain tank 53. The on / off valve V11 controls the supply and cessation of the inert gas supply. The discharge pipe 61 discharges the processed liquid or the like from the drain tank 53.

[0071] The drain tank 53 discharges the processing liquid at appropriate times. When discharging the processing liquid stored in the drain tank 53, for example, the on / off valves V8, V9, and V12 are closed while the on / off valve V11 is opened, restoring atmospheric pressure inside the drain tank 53. Then, the on / off valves V8 and V9 are closed while the on / off valves V11 and V12 are opened to discharge the processing liquid from the drain tank 53.

[0072] Additionally, chamber 3 includes a shielding plate 63. The shielding plate 63 is disposed approximately downwards from the upper edge (or opening 2C) of the processing tank 2 along the entire circumference of the outer side surface 2A of the processing tank 2. In other words, the shielding plate 63 is disposed between the outer wall of the processing tank 2 and the inner wall of the chamber 3. The shielding plate 63 shields the atmosphere between the upper part (upper space) and the lower part (lower space) of the chamber 3. The shielding plate 63 has gaps G1 and G2 (openings) that allow the processing liquid overflowing from the processing tank 2 to flow into the lower part of the chamber 3. That is, there is a gap G1 between the shielding plate 63 and the outer wall of the processing tank 2, and a gap G2 between the shielding plate 63 and the inner wall of the chamber 3. Alternatively, one of the gaps G1 or G2 may be omitted if necessary. The shielding plate 63 can be installed on the outer wall of the processing tank 2 or the inner wall of the chamber 3.

[0073] A pressure sensor PS1 is installed in chamber 3 to measure the pressure inside chamber 3. Additionally, a pressure sensor PS2 is installed in drain tank 53 to measure the pressure inside drain tank 53. Furthermore, a liquid level sensor LS is installed in chamber 3 to detect the liquid level of, for example, cleaning fluid stored in chamber 3. The pressure values ​​measured by pressure sensors PS1 and PS2, and the liquid level value detected by liquid level sensor LS, are sent to the control unit 81, which will be described later.

[0074] The substrate processing apparatus 1 includes a control unit 81 and a storage unit (not shown). The control unit 81 controls each structure of the substrate processing apparatus 1. The control unit 81 may include one or more processors, such as a central processing unit (CPU). The storage unit may include at least one of ROM (Read-Only Memory), RAM (Random-Access Memory), and a hard disk. The storage unit stores computer programs required for controlling each structure of the substrate processing apparatus 1.

[0075] Furthermore, the substrate processing apparatus 1 is equipped with two cleaning liquid nozzles 16. In this regard, the substrate processing apparatus 1 may be equipped with one or more cleaning liquid nozzles 16. The same applies to the two ejection pipes 5, the two inert gas nozzles 25, the two solvent vapor nozzles 27, and the two water-repellent vapor nozzles 29.

[0076] (2) Operation of substrate processing device 1

[0077] Next, refer to Figure 2 , Figure 3 The operation of the substrate processing apparatus 1 will be explained. Furthermore, in Figure 2 The illustration of elevator 4 is omitted. Furthermore, in Figure 2 The exhaust operation symbol "VAC" is used for exhaust pumps such as the Lieutenant General's Exhaust Pump 47. Figure 3 The diluted IPA solution is referred to as "dIPA solution".

[0078] [Step S01] First impregnation treatment (transfer of substrate into the chamber)

[0079] Pure water is stored in the processing tank 2 as a processing solution. Pure water is supplied from the spray pipe 5. First, the upper cover 23 moves to open the upper opening of the chamber 3. The lifter 4 lowers the substrate W held by the holding member 4A from the standby position H1 to the processing position H3. That is, the lifter 4 immerses the entire substrate W in the pure water stored in the processing tank 2 for a preset time. The substrate W is cleaned by immersing it in pure water. After the substrate W is immersed in pure water, the upper cover 23 moves to close the upper opening of the chamber 3.

[0080] [Step S02] Nitrogen supply

[0081] Then, the on / off valve V4 is opened, supplying nitrogen gas into chamber 3 from the inert gas nozzle 25. Furthermore, the exhaust pump 47 is activated and the on / off valve V7 is opened, thereby exhausting the gas inside chamber 3 through exhaust port 43 and exhaust pipe 45. As a result, the pressure inside chamber 3 becomes lower than atmospheric pressure, i.e., a depressurized state.

[0082] [Step S03] Supply of the first IPA vapor (formation of the IPA vapor atmosphere)

[0083] The exhaust pump 47 continuously exhausts gas from the chamber 3. The on / off valve V4 is closed to stop the supply of nitrogen from the inert gas nozzle 25. In addition, to create an atmosphere of IPA vapor in the chamber 3, the on / off valve V5 is opened, and IPA vapor is supplied into the chamber 3 from the solvent vapor nozzle 27.

[0084] [Step S04] Supply of the first IPA vapor (IPA replacement)

[0085] The exhaust pump 47 is stopped and the on / off valve V7 is closed. The chamber 3 is in a depressurized state. Meanwhile, IPA vapor is continuously supplied from the solvent vapor nozzle 27. In this state, the lifter 4 raises the substrate W from the pure water in the processing tank 2 and moves the substrate W from the processing position H3 to the drying position H2. The substrate W is exposed to IPA vapor, and the pure water adhering to the substrate W is replaced with IPA. Furthermore, the effectiveness of the water-repellent agent decreases when it comes into contact with water. However, this decrease in effectiveness can be prevented by performing IPA replacement.

[0086] [Step S05] Supply of the first IPA vapor (discharge of the treatment liquid from the treatment tank)

[0087] The chamber 3 is under reduced pressure. Meanwhile, IPA vapor is continuously supplied from the solvent vapor nozzle 27. In this state, the QDR valve 14 is opened, and pure water is rapidly released from the treatment tank 2 to the bottom of the chamber 3. Afterwards, once the treatment tank 2 is empty, the QDR valve 14 is closed.

[0088] [Step S06] Supply of water-repellent vapor

[0089] By activating the exhaust pump 47 and opening the on / off valve V7, the gas inside the chamber 3 is exhausted. This reduces the pressure inside the chamber 3. Meanwhile, the on / off valve V5 is closed, stopping the supply of solvent vapor from the solvent vapor nozzle 27. Furthermore, the on / off valve V6 is opened, supplying water-repellent vapor into the chamber 3 from the water-repellent vapor nozzle 29. At this time, the substrate W moves up and down between the two water-repellent vapor nozzles 29 via the lifter 4. This uniformly supplies water-repellent vapor to the entire substrate W. This replaces the IPA adhering to the substrate W with water-repellent. The surface of the substrate W is modified using the water-repellent.

[0090] [Step S07] Supply of the second IPA steam

[0091] The exhaust pump 47 continuously exhausts air from the chamber 3. The on / off valve V6 is closed, stopping the supply of water-repellent vapor from the water-repellent vapor nozzle 29. Instead, the on / off valve V5 is opened, supplying IPA vapor from the solvent vapor nozzle 27. The supply of IPA vapor (rinsing using IPA vapor) continues from step S07 (this step) to step S11. As a result, the atmosphere in the chamber 3 is replaced by IPA vapor from water-repellent vapor. Furthermore, when the substrate W is exposed to IPA vapor, liquefied IPA adheres to the substrate W. As a result, the water-repellent adhering to the surface of the substrate W is replaced by IPA, and fine particles and organic matter from the water-repellent are washed away from the substrate W by the IPA. Fine particles (foreign matter) from the water-repellent are generated, for example, due to direct contact between moisture and the water-repellent.

[0092] [Step S08] Supply of the second IPA vapor and discharge of the treatment liquid outside the chamber.

[0093] The exhaust pump 47 continuously vents air from the chamber 3. Additionally, IPA vapor is continuously supplied from the solvent vapor nozzle 27. In this state, pure water stored at the bottom of the chamber 3 for chamber cleaning is discharged to the outside of the chamber 3.

[0094] To explain in detail. Figure 1 For example, if the pressure P2 in the drain tank 53 is higher than the pressure P1 in the chamber 3, opening the on / off valve V8 will cause reverse flow from the drain tank 53 to the chamber 3. Therefore, pure water in the chamber 3 cannot be discharged into the drain tank 53. Therefore, with the three on / off valves V8, V11, and V12 closed, opening the on / off valve V9 and activating the exhaust pump 57 to vent air from the drain tank 53.

[0095] The pressure value P1 in chamber 3 is measured by pressure sensor PS1. Similarly, the pressure value P2 in drain tank 53 is measured by pressure sensor PS2. The vent pump 57 vents air from drain tank 53 such that the pressure value P2 in drain tank 53 is lower than the pressure value P1 in chamber 3. Once the pressure value P2 in drain tank 53 becomes lower than the pressure value P1 in chamber 3, the on / off valve V8 opens, allowing pure water from chamber 3 to be discharged into drain tank 53.

[0096] Furthermore, the pressure P1 within chamber 3 can be controlled by adjusting the exhaust flow rate using the exhaust pump 47. Additionally, the pressure P1 within chamber 3 can also be controlled by adjusting the gas flow rate through the exhaust pipe 45 using the on / off valve V7. Furthermore, the pressure P2 within the drain tank 53 can also be controlled by adjusting the exhaust flow rate using the exhaust pump 57. Additionally, the pressure P2 within the drain tank 53 can also be controlled by adjusting the gas flow rate through the exhaust pipe 55 using the on / off valve V9.

[0097] [Step S09] Stop the supply of the second IPA vapor and the discharge of the treatment liquid out of the chamber.

[0098] The exhaust pump 47 continuously vents the contents of chamber 3. Additionally, IPA vapor is continuously supplied from the solvent vapor nozzle 27. When chamber 3 becomes empty, the on / off valve V8 is closed.

[0099] [Step S10] Supply of the second IPA vapor and cleaning treatment in the chamber.

[0100] The control unit 81 supplies pure water (cleaning fluid) into the chamber 3 from the cleaning fluid nozzle 16 while the chamber 3 is depressurized by the exhaust pump 47, and cleans the chamber 3, including the outer wall of the processing tank 2, by immersing the processing tank 2 in the pure water stored in the chamber 3.

[0101] The details are explained in detail. The exhaust pump 47 continuously vents the air from chamber 3. Additionally, IPA vapor is continuously supplied from the solvent vapor nozzle 27. In this state, pure water (cleaning fluid) is supplied to chamber 3 from the cleaning fluid nozzle 16 by opening the on / off valve V3. When the liquid level sensor LS detects that the pure water level has reached a height slightly below the exhaust port 43, the on / off valve V3 is closed, and the supply of pure water from the cleaning fluid nozzle 16 is stopped.

[0102] The outer wall of the treatment tank 2 is immersed for a predetermined period. The lower part of the chamber 3 (the outer side 2A and lower surface 2B of the treatment tank 2, and the inner side 3A of the chamber 3) can be cleaned using pure water stored in the lower part of the chamber 3.

[0103] The effect of directly supplying pure water (cleaning fluid) to the chamber 3 using the cleaning fluid nozzle 16 will be explained here. To supply pure water (cleaning fluid) to the lower part of the chamber 3, a method exists where pure water is supplied from the spray pipe 5 to the treatment tank 2, and the pure water overflowing from the treatment tank 2 is conveyed to the lower part of the chamber 3. At this time, as... Figure 4A As shown, under reduced pressure conditions (lower than atmospheric pressure), mist generated from the pure water stored in processing tank 2 easily adheres to substrate W. When mist adheres to substrate W, the effectiveness of the water-repellent agent is reduced due to direct contact between the moisture in the mist and the water-repellent agent. Furthermore, there is a risk of generating small particles (foreign matter). Therefore, mist adhering to substrate W is undesirable.

[0104] Therefore, a cleaning fluid nozzle 16 is provided at the bottom of chamber 3. Thus, even if pure water is stored in chamber 3, because the water surface is far from the substrate W, any mist generated can be prevented from adhering to the substrate W (see reference). Figure 4B Furthermore, the shielding plate 63 prevents the mist from moving upwards towards the chamber 3. Additionally, exhaust pump 47 vents air from the chamber 3. Therefore, the mist is discharged from the exhaust port 43. Furthermore, IPA vapor is supplied to the upper part of the chamber 3 from the solvent vapor nozzle 27 and is also vented by the exhaust pump 47. Therefore, downward airflow is generated at the gaps G1 and G2 in the shielding plate 63, effectively preventing the mist from moving upwards towards the chamber 3.

[0105] [Step S11] Supply of the second IPA vapor and discharge of cleaning fluid out of the chamber.

[0106] The control unit 81 performs a discharge process by draining pure water (cleaning solution) from the outlet 49 located on the bottom wall of the chamber 3 while the chamber 3 is depressurized by the exhaust pump 47. That is, the exhaust pump 47 continuously vents air from the chamber 3. Additionally, IPA vapor is continuously supplied from the solvent vapor nozzle 27. In this state, the on / off valve V8 is opened to discharge the pure water from the chamber 3 into the drain tank 53. At this time, the pressure P2 in the drain tank 53 is lower than the pressure P1 in the chamber 3 by the exhaust pump 57. When the chamber 3 becomes empty, the on / off valve V8 is closed.

[0107] In addition, steps S10 and S11 can be repeated a predetermined number of times (once or more than twice). That is, steps S10 and S11 are performed alternately. Alternatively, steps S10 and S11 can each be performed only once, without repeating steps S10 and S11.

[0108] [Step S12] Cleaning of the treatment tank (nitrogen supply)

[0109] Stop the exhaust pump 47 and close the on / off valve V7. Additionally, close the on / off valve V5 to stop the supply of IPA vapor from the solvent vapor nozzle 27. Furthermore, open the on / off valve V4 to supply nitrogen gas from the inert gas nozzle 25. This restores atmospheric pressure to the chamber 3 from a depressurized state.

[0110] [Step S13] Cleaning the treatment tank (supply of cleaning solution)

[0111] Nitrogen gas is continuously supplied from the inert gas nozzle 25. In this state, the on / off valve V1 is opened, and pure water is supplied from the spray pipe 5 into the treatment tank 2 as a cleaning fluid. The pure water stored in the treatment tank 2 is used to clean the inside of the treatment tank 2. Furthermore, when pure water is stored in the treatment tank 2, the pure water supplied from the spray pipe 5 can overflow from the treatment tank 2.

[0112] [Step S14] Cleaning the treatment tank (draining the cleaning solution)

[0113] Nitrogen gas is continuously supplied from the inert gas nozzle 25. In this state, the QDR valve 14 is opened, rapidly releasing pure water from the treatment tank 2 to the bottom of the chamber 3. Additionally, the on / off valve V8 is opened to drain the pure water (cleaning solution) stored at the bottom of the chamber 3 into the drain tank 53. Once the treatment tank 2 is empty, the QDR valve 14 is closed. Similarly, once the chamber 3 is empty, the on / off valve V8 is closed.

[0114] [Step S15] Second immersion treatment

[0115] Nitrogen gas is continuously supplied from the inert gas nozzle 25. In this state, the on / off valve V2 is opened, supplying diluted IPA solution into the processing tank 2 from the nozzle 5. When the processing tank 2 stores a preset amount of diluted IPA solution, the lifter 4 lowers the substrate W from the drying position H2 to the processing position H3, thereby immersing the substrate W in the diluted IPA solution in the processing tank for a preset period. This further cleans the substrate W. The on / off valve V2 is closed after the diluted IPA solution is supplied.

[0116] [Step S16] Supply of the third IPA vapor (drying process)

[0117] By activating the exhaust pump 47 and opening the on / off valve V7, the gas inside chamber 3 is exhausted. This reduces the pressure inside chamber 3. Additionally, by opening the on / off valve V5, IPA vapor is supplied from the solvent vapor nozzle 27. Once the atmosphere inside chamber 3 is filled with IPA vapor, the lifter 4 removes the substrate W from the diluted IPA solution in the processing tank 2 and raises the substrate W from the processing position H3 to the drying position H2. This replaces the diluted IPA solution adhering to the substrate W with IPA.

[0118] While the exhaust pump 47 continuously vents air from the chamber 3, the on / off valve V5 is closed to stop the supply of IPA vapor from the solvent vapor nozzle 27. The supply of IPA vapor is stopped, and the pressure inside the chamber 3 is reduced, thereby causing the IPA adhering to the substrate W to evaporate actively, thus drying the substrate W. Furthermore, as... Figure 3 As indicated by the symbol NS, nitrogen can be supplied from the inert gas nozzle 25 after the supply of IPA vapor is stopped.

[0119] [Step S17] Nitrogen supply

[0120] Stop the exhaust pump 47 and close the on / off valve V7. Then, open the on / off valve V4 to supply nitrogen gas from the inert gas nozzle 25. This restores atmospheric pressure to the chamber 3 from a depressurized state.

[0121] Furthermore, when the chamber 3 is contaminated, if nitrogen is supplied at atmospheric pressure inside the chamber 3, the tiny particles in the lower part of the chamber 3 will be stirred up. Although a shielding plate 63 is provided, tiny particles passing through gaps G1 and G2 may adhere to the substrate W. By cleaning the chamber 3, the number of tiny particles stirred up by the nitrogen can be reduced, thereby preventing the tiny particles from adhering to the substrate.

[0122] [Step S18] The substrate is removed from the chamber.

[0123] The upper cover 23 moves, opening the top opening of the chamber 3. The lifter 4 raises the substrate W held by the holding component 4A from the drying position H2 to the standby position H1. The substrate W, raised to the standby position H1, is moved to its next destination by a transport robot (not shown).

[0124] Furthermore, in steps S10 and S11, the cleaning process of chamber 3 and the discharge of the cleaning fluid are performed in parallel with the supply of the second IPA vapor. In this regard, the cleaning process of chamber 3 and the discharge of the cleaning fluid in steps S10 and S11 can be performed after the supply of the second IPA vapor in steps S07 to S11. By performing these processes in parallel, a series of substrate processing steps can be carried out efficiently.

[0125] That is, when the control unit 81 supplies solvent vapor from the solvent vapor nozzle 27 into the chamber 3 (steps S10 and S11), it performs a chamber cleaning process. The chamber cleaning process can be performed in parallel with the process of supplying solvent vapor into the chamber 3, thereby enabling efficient processing of the substrate W.

[0126] According to this embodiment, cleaning fluid is supplied into the chamber 3 from the cleaning fluid nozzle 16, and a chamber cleaning process is performed by immersing the processing tank 2 in the cleaning fluid stored in the chamber 3 to clean the interior of the chamber 3, including the outer wall of the processing tank 2. This allows for the cleaning of not only the outer wall of the processing tank 2 (including the outer surface 2A and the lower surface 2B) but also the removal of fine particles adhering to the side walls and bottom wall of the chamber 3. Therefore, it prevents fine particles in the lower part of the chamber 3 from being stirred up and adhering to the substrate W.

[0127] In addition, the substrate processing apparatus 1 also includes a water-repellent vapor nozzle 29 for supplying water-repellent vapor into the chamber 3. After performing the immersion treatment (step S01), the control unit 81 performs a water-repellent vapor supply process (step S06) to supply water-repellent vapor into the chamber 3 from the two water-repellent vapor nozzles 29 in order to make the substrate W water-repellent. After performing the water-repellent vapor supply process, the control unit 81 performs a chamber cleaning process (step S10).

[0128] Therefore, the cleaning process of chamber 3 can be performed during a series of substrate processing steps (steps S01 to S18). Furthermore, the process of supplying water-repellent agent vapor to make the substrate W water-repellent (step S06) generates a large number of tiny particles from the water-repellent agent. These tiny particles accumulate in the lower part of chamber 3. Moreover, the problem arises when these tiny particles in the lower part of chamber 3 are stirred up and adhere to the substrate W. According to this embodiment, the cleaning process of chamber 3 can be performed during a series of substrate processing steps. Therefore, it is possible to prevent tiny particles (including tiny particles from the water-repellent agent) in the lower part of chamber 3 from being stirred up and adhering to the substrate W.

[0129] In addition, the substrate processing apparatus 1 also includes an exhaust pump 47 for venting air from the chamber 3. A cleaning fluid nozzle 16 is provided in the lower part of the chamber 3 and supplies cleaning fluid into the chamber 3. The control unit 81 performs chamber cleaning processing while the chamber 3 is depressurized by the exhaust pump 47.

[0130] Therefore, the cleaning process of chamber 3 can be performed while chamber 3 is depressurized by venting air from chamber 3 using exhaust pump 47. Additionally, cleaning fluid is supplied to processing tank 2 and allowed to overflow from processing tank 2, and then stored in chamber 3. However, a problem arises: under depressurized conditions in chamber 3, mist is easily generated from the cleaning fluid stored in processing tank 2, and this mist easily adheres to substrate W. For example, if the moisture in the mist comes into direct contact with the water-repellent agent adhering to substrate W, the effectiveness of the water-repellent agent may be reduced. Furthermore, if moisture comes into direct contact with the water-repellent agent, small particles may be generated. Additionally, other small particles may also cause adhesion. According to this embodiment, the cleaning fluid is supplied directly into chamber 3 from cleaning fluid nozzle 16 located at the bottom of chamber 3, thus keeping the cleaning fluid away from substrate W. Therefore, the adhesion of generated mist to the substrate can be suppressed.

[0131] Furthermore, the exhaust pump 47 exhausts air from the chamber 3 through an exhaust port 43 located on the side wall of the chamber 3 on the side of the processing tank 2. The control unit 81 performs chamber cleaning treatment while the chamber 3 is depressurized by exhausting air from the chamber 3 by the exhaust pump 47. Even if mist is generated from the cleaning fluid, it can be discharged from the exhaust port 43 by the exhaust pump 47.

[0132] Furthermore, the substrate processing apparatus 1 includes a shielding plate 63 disposed between the outer wall of the processing tank 2 and the inner wall of the chamber 3, shielding the atmosphere between the upper and lower parts of the chamber 3. The shielding plate 63 has gaps (openings) G1 and G2 that allow processing liquid overflowing from the processing tank 2 to flow into the lower part of the chamber 3. Because of the shielding plate 63, even if mist is generated from the cleaning liquid stored in the chamber 3, the movement of mist from the lower part to the upper part of the chamber 3 can be suppressed. Additionally, the movement of small particles raised from the lower part to the upper part of the chamber 3 can be suppressed.

[0133] Furthermore, the cleaning fluid nozzle 16 is positioned at the bottom of the chamber 3, overlapping with the processing tank 2 when viewed from above. This allows the cleaning fluid nozzle 16 to be concealed within the processing tank 2. Additionally, since it is located further away from the substrate W above the chamber 3, adhesion to the substrate W can be suppressed even if mist is generated.

[0134] In addition, the control unit 81 performs a discharge process by discharging the cleaning fluid from the outlet 49 provided in the chamber 3 while the chamber 3 is depressurized by the exhaust pump 47. The control unit 81 repeats the chamber cleaning process (step S10) and the discharge process (step S11) a preset number of times. The more times the chamber cleaning process is repeated, the better the cleaning of the chamber 3 can be achieved.

[0135] In addition, the substrate processing apparatus 1 also includes an inert gas nozzle 25 for supplying inert gas into the chamber 3. After performing the drying process (step S16), the control unit 81 restores the pressure in the chamber 3 from the depressurized state to atmospheric pressure by supplying inert gas into the chamber 3 from the inert gas nozzle 25 (step S17). Since the chamber 3 is cleaned, the amount of fine particles stirred up by the inert gas can be reduced.

[0136] [Example 2]

[0137] The following description refers to Embodiment 2 of the present invention. Furthermore, descriptions that are repeated in Embodiment 1 are omitted. In Embodiment 1, in... Figure 2 During the series of substrate processing steps S01 to S18, the chamber 3 is cleaned in parallel with the supply of the second IPA vapor (steps S07 to S11) under reduced pressure. In this respect, in Embodiment 2, the chamber 3 is cleaned in parallel with the cleaning of the processing tank 2 (steps S28 to S31) under atmospheric pressure.

[0138] Figure 5 This is a schematic structural diagram of the substrate processing apparatus 1 in Embodiment 2. Figure 5 The substrate processing device 1 shown is... Figure 1 The substrate processing apparatus 1 shown in Embodiment 1 differs from the one in that it does not have the cleaning fluid nozzle 16 or the like provided at the bottom of the chamber 3. Otherwise, the structure is the same as the substrate processing apparatus 1 of Embodiment 1. Furthermore, the ejection pipe 5 corresponds to the cleaning fluid nozzle of the present invention.

[0139] (3) Operation of substrate processing device 1

[0140] Next, refer to Figure 6 , Figure 7 The operation of the substrate processing apparatus 1 will be explained. Furthermore, Figure 6 Steps S21-S27, S32-S35 shown are Figure 2 Steps S01 to S07 and S15 to S18 of Example 1 shown are the same, and detailed descriptions of these are omitted. Furthermore, IPA vapor is supplied sufficiently in step S27.

[0141] The lifter 4 immerses the substrate W in pure water stored in the processing tank 2 (step S21). Then, with the upper cover 23 closed, nitrogen gas is supplied from the inert gas nozzle 25 (step S22). Next, IPA vapor is supplied from the solvent vapor nozzle 27 (step S23). Then, the lifter 4 removes the substrate W from the processing tank 2, exposing it to the IPA vapor atmosphere (step S24). Then, the QDR valve 14 is opened to release the pure water in the processing tank 2 to the lower surface of the chamber 3 (step S25).

[0142] Next, water-repellent vapor is supplied from the water-repellent vapor nozzle 29 to make the substrate W water-repellent (step S26). Then, IPA vapor is supplied from the solvent vapor nozzle 27 to wash away the water-repellent and small particles from the water-repellent adhering to the surface of the substrate W (step S27). Furthermore, steps S22, S23, S26, and S27 involve venting and depressurizing the chamber 3 using the exhaust pump 47. Additionally, in steps S22 to S27, the chamber 3 is in a depressurized state.

[0143] [Step S28] Cleaning the treatment tank (nitrogen supply) and draining the treatment liquid.

[0144] Stop the exhaust pump 47 and close the on / off valve V7. Also, close the on / off valve V5 to stop the supply of IPA vapor from the solvent vapor nozzle 27. Furthermore, open the on / off valve V4 to supply nitrogen from the inert gas nozzle 25. This restores atmospheric pressure to the chamber 3 from a depressurized state.

[0145] After restoring atmospheric pressure in chamber 3, the on / off valve V8 is opened to discharge the pure water (treatment liquid) stored in chamber 3 into the drain tank 53. When all the pure water stored in chamber 3 has been discharged, i.e., when the liquid level sensor LS detects that chamber 3 is empty, the on / off valve V8 is closed.

[0146] [Step S29] Cleaning the treatment tank (supply of cleaning fluid to the treatment tank)

[0147] Nitrogen gas is then continuously supplied from the inert gas nozzle 25. The chamber 3 is at atmospheric pressure. Under these conditions, the on / off valve V1 is opened, and pure water is supplied from the spray pipe 5 into the treatment tank 2 as a cleaning fluid. The pure water is stored in the treatment tank 2.

[0148] [Step S30] Cleaning of the treatment tank (supply of cleaning fluid to the chamber, cleaning within the chamber)

[0149] Then, pure water is supplied from the spray pipe 5, and the pure water overflowing from the opening 2C of the treatment tank 2 is stored in the chamber 3. Furthermore, a shielding plate 63 is provided on the side of the treatment tank 2. The gaps G1 and G2 of the shielding plate 63 allow the pure water overflowing from the treatment tank 2 to flow into the lower part of the chamber 3. The pure water is stored slightly below the opening 2C of the treatment tank 2, specifically slightly below the shielding plate 63. When the liquid level sensor LS detects that the liquid level has reached a preset height, the on / off valve V1 is closed, stopping the supply of pure water from the spray pipe 5. The state of pure water storage in the treatment tank 2 and chamber 3 is maintained for a preset time.

[0150] [Step S31] Cleaning the treatment tank (draining the cleaning solution)

[0151] Nitrogen gas is then continuously supplied from the inert gas nozzle 25. The on / off valve V8 is opened, discharging the pure water stored in chamber 3 into the drain tank 53. Additionally, the QDR valve 14 is opened, releasing pure water from the treatment tank 2 to the bottom of chamber 3. The pure water in treatment tank 2 is also discharged into the drain tank 53 via the discharge pipe 51. Once treatment tank 2 is empty, the QDR valve 14 is closed. Similarly, once chamber 3 is empty, the on / off valve V8 is closed. Furthermore, to maintain the cleanliness of treatment tank 2, the pure water in chamber 3 can be initially discharged into the drain tank 53, followed by the discharge of pure water from treatment tank 2 into the drain tank 53.

[0152] Furthermore, the three steps S29 to S31 can be repeated a predetermined number of times (once or twice or more). This means that the cleaning processes of the processing tank 2 and chamber 3 in steps S29 and 30, and the discharge process in step S31, are repeated a predetermined number of times. Alternatively, steps S29 to S31 can each be performed only once, without repeating steps S29 to S31.

[0153] Next, diluted IPA solution is supplied into the processing tank 2 through the ejector pipe 5, and the substrate W is immersed in the diluted IPA solution stored in the processing tank 2 (step S32). Then, IPA vapor supplied from the solvent vapor nozzle 27 is used to dry the substrate W, which has been treated in pure water (step S33). Next, nitrogen gas is supplied to restore atmospheric pressure within the chamber 3 (step S34). Then, the substrate W is removed from the chamber 3 and moved to its next destination (step S35).

[0154] According to this embodiment, the ejector pipe 5 is disposed at the bottom of the processing tank 2. The ejector pipe 5 supplies cleaning fluid into the processing tank 2 and also supplies cleaning fluid into the chamber 3 via the processing tank 2. The control unit 81 supplies cleaning fluid into the processing tank 2 from the ejector pipe 5 at atmospheric pressure within the chamber 3, stores cleaning fluid overflowing from the processing tank 2 in the chamber 3, and performs chamber cleaning by immersing the processing tank 2 in the cleaning fluid stored in the chamber 3. Thus, the chamber 3 can be cleaned at atmospheric pressure within it. Therefore, it is possible to prevent small particles at the bottom of the chamber 3 from being lifted and adhering to the substrate W. Furthermore, since cleaning fluid is also supplied to the processing tank 2, the cleaning processes of the processing tank 2 and the chamber 3 can be performed in parallel.

[0155] Furthermore, in steps S29 to S31, the supply of cleaning fluid to the processing tank 2, the supply of cleaning fluid to the chamber 3 (cleaning of the chamber 3), and the discharge of cleaning fluid are performed in parallel with the cleaning of the processing tank 2. In this regard, cleaning fluid can be supplied to the chamber 3 before or after the cleaning of the processing tank 2 (cleaning of the chamber 3), etc. By performing these processes in parallel, a series of substrate processing steps can be performed efficiently.

[0156] [Example 3]

[0157] The following description refers to Embodiment 3 of the present invention. Furthermore, descriptions that are repeated in Embodiments 1 and 2 are omitted. In Embodiment 1, in... Figure 2 The chamber 3 is cleaned during the series of substrate processing steps S01 to S18. In this respect, in Example 3, the chamber 3 is cleaned between two consecutive series of substrate processing.

[0158] The structure of substrate processing apparatus 1 in Example 3 is similar to Figure 5 The substrate processing apparatus 1 of Embodiment 2 shown has the same structure.

[0159] (4) Operation of substrate processing apparatus 1

[0160] Next, refer to Figures 8-10 The operation of the substrate processing apparatus 1 will be explained. Figure 8 This is a diagram used to illustrate the operation of the substrate processing apparatus in Embodiment 3. Figure 9 This is a timing diagram showing the operation (a series of substrate processing) of the substrate processing apparatus in Embodiment 3. Figure 10 This is a timing diagram showing the operation (cleaning of chamber 3) of the substrate processing apparatus in Embodiment 3.

[0161] In this embodiment, the cleaning process of chamber 3 is part of a predetermined series of substrate processes ( Figure 9Steps S41 to S54), and a series of subsequent substrate processing steps ( Figure 9 The cleaning process in chamber 3 is performed between steps S41 and S54. In addition, the cleaning process in chamber 3 is performed whenever a series of substrate processing (steps S41 to S54) including immersion (step S41) and drying (step S52) is performed on a predetermined number of substrates W or a predetermined batch number.

[0162] The substrate W is processed in batches. For example, 25 substrates W stored in a carrier used to transport substrate W are processed as a batch.

[0163] exist Figure 9 In the series of substrate processing shown, Figure 9 Steps S41 to S54 shown are Figure 3 Steps S01-S07, S13-S18, and of Embodiment 1 shown Figure 7 Step S28 of Example 2 shown is the same, so a description of these is omitted. Furthermore, IPA vapor is supplied adequately in step S47.

[0164] Next, the cleaning process of chamber 3 in this embodiment will be described. (Refer to...) Figure 8 , Figure 10 The control unit 81 counts the number of substrates W undergoing a series of substrate processes, for example. When a predetermined (e.g., the 5th) series of substrate processes is performed, the number of substrates W undergoing the series of processes is greater than or equal to a preset number. At this time, the control unit 81 performs a cleaning process in chamber 3 between the predetermined (5th) series of substrate processes and a subsequent (6th) series of substrate processes. Furthermore, the count of the number of substrates W is reset (to 0). The same applies to batch processing. That is, the control unit 81 counts the number of batches undergoing a series of substrate processes. When a predetermined (e.g., the 5th) series of substrate processes is performed, the number of batches undergoing the series of substrate processes is greater than or equal to a preset number. At this time, the control unit 81 performs a cleaning process in chamber 3 between the predetermined (5th) series of substrate processes and a subsequent (6th) series of substrate processes.

[0165] [Step S61] Preparation for cleaning

[0166] The chamber 3 is at atmospheric pressure. Furthermore, from step S61 to step S65, the chamber 3 is at atmospheric pressure. Additionally, in step S61, the chamber 3 is empty and does not contain any processing liquid.

[0167] [Step S62] Supply of cleaning fluid

[0168] Subsequently, with QDR valve 14 and on / off valves V7 and V8 closed, on / off valve V2 is opened to supply, for example, diluted IPA solution as a cleaning fluid from the spray pipe 5 to the processing tank 2. Furthermore, the diluted IPA solution overflows from opening 2C of the processing tank 2, and the overflowing diluted IPA is stored in a chamber. If the liquid level sensor LS detects that the diluted IPA in chamber 3 has reached a preset liquid level, on / off valve V2 is closed to stop the supply of diluted IPA solution. The state of storing diluted IPA solution in the processing tank 2 and chamber 3 is then maintained for a preset time. In this embodiment, diluted IPA solution is supplied as a cleaning fluid; however, diluted H2O2 solution or pure water could also be used.

[0169] [Step S63] Drainage of cleaning fluid

[0170] Next, the on / off valve V8 is opened to discharge the diluted IPA solution stored in chamber 3 into the drain tank 53. Additionally, the QDR valve 14 is opened to release the diluted IPA solution from the treatment tank 2 into the bottom of chamber 3. The diluted IPA solution in treatment tank 2 is also discharged into the drain tank 53 via the drain pipe 51. Once treatment tank 2 is empty, the QDR valve 14 is closed. Furthermore, once chamber 3 is empty, the on / off valve V8 is closed.

[0171] These steps S62 and S63 can be repeated a predetermined number of times (once or more). Alternatively, if necessary, steps S62 and S63 can each be performed once, without repeating steps S62 and S63.

[0172] [Step S64] Supply of rinsing fluid

[0173] After step S63, with QDR valve 14 and on / off valves V7 and V8 closed, on / off valve V1 is opened to supply, for example, pure water as a rinsing solution from the spray pipe 5 to the treatment tank 2. Furthermore, pure water overflows from opening 2C of the treatment tank 2 and is stored in chamber 3. When the liquid level sensor LS detects that the pure water in chamber 3 has reached a preset liquid level, on / off valve V1 is closed to stop the supply of pure water. The state of pure water storage in the treatment tank 2 and chamber 3 is then maintained for a preset time.

[0174] [Step S65] Drainage of flushing fluid

[0175] Next, the on / off valve V8 is opened to discharge the pure water stored in chamber 3 into the drain tank 53. Additionally, the QDR valve 14 is opened to release pure water from the treatment tank 2 into the bottom of chamber 3. The pure water in treatment tank 2 is also discharged into the drain tank 53 via the drain pipe 51. Once treatment tank 2 is empty, the QDR valve 14 is closed. Furthermore, once chamber 3 is empty, the on / off valve V8 is closed.

[0176] These steps S64 and S65 can be repeated a predetermined number of times (once or more). Alternatively, as needed, steps S64 and S65 can each be performed once, without repeating steps S64 and S65.

[0177] After cleaning chamber 3 in steps S61 to S65, a series of subsequent substrate processing steps (S41 to S54) are performed.

[0178] According to this embodiment, the control unit 81 performs a chamber cleaning process between two consecutive series of substrate processes whenever a series of substrate processes, including impregnation and drying, is performed on a predetermined number of substrates W or a predetermined batch number. Since the chamber 3 can be cleaned between two consecutive series of substrate processes whenever a series of substrate processes is performed on a predetermined number of substrates W or a predetermined batch number, it is possible to prevent small particles at the bottom of the chamber 3 from being lifted up and adhering to the substrate W.

[0179] Furthermore, the spray pipe 5 is located at the bottom of the treatment tank 2 and supplies cleaning fluid into the treatment tank 2. The control unit 81 supplies cleaning fluid into the treatment tank 2 from the spray pipe 5 at atmospheric pressure inside the chamber 3, and stores the cleaning fluid overflowing from the treatment tank 2 in the chamber 3. By immersing the treatment tank 2 in the cleaning fluid stored in the chamber 3, the interior of the chamber 3, including the outer wall of the treatment tank 2, is cleaned. Thus, both the treatment tank 2 and the chamber 3 can be cleaned simultaneously.

[0180] The present invention is not limited to the above embodiments, and can be implemented in the following modified ways.

[0181] (1) In the above embodiment 3, diluted IPA solution is supplied from the spray pipe 5 as a cleaning solution in step S62. When pure water is used as the cleaning solution, steps S64 and S65 can be omitted.

[0182] (2) In the above embodiments 1 and 2, the cleaning process of chamber 3 is not performed between two consecutive series of substrate processing. In each of embodiments 1 and 2, the cleaning process of chamber 3 is performed between two consecutive series of substrate processing, except that the cleaning process of chamber 3 is performed during a series of substrate processing. This is as in embodiment 3.

[0183] That is, in Figure 8 , Figure 10 In this process, a series of substrate processing steps (S41-S54) can be replaced by a series of substrate processing steps ( Figure 2 , Figure 3 (Steps S01 to S18 are shown). Furthermore, a series of substrate processing steps (steps S41 to S54) can be replaced by a series of substrate processing steps (…). Figure 6 , Figure 7 (Steps S21 to S35 shown).

[0184] (3) In embodiments 2 and 3 above, the cleaning fluid is supplied only from the spray pipe 5 (refer to...) Figure 5 Regarding this, it can be set at the bottom of chamber 3. Figure 1 The cleaning fluid nozzle 16 is shown. When a cleaning fluid (e.g., pure water) is supplied, the cleaning fluid can be supplied to the treatment tank 2 and the chamber 3 from the spray pipe 5 and the cleaning fluid nozzle 16, respectively. This can shorten the time for supplying the cleaning fluid.

[0185] In addition, in embodiment 3, rinsing fluid can be supplied from the spray pipe 5 and the cleaning fluid nozzle 16 to the treatment tank 2 and the chamber 3, respectively.

[0186] (4) In Embodiment 1 and Modifications (2) and (3) above, the cleaning fluid nozzle 16 supplies cleaning fluid (e.g., pure water) into the chamber 3 in an unobstructed manner. Regarding this, it can be seen that... Figure 11 As shown, a nozzle cover 71 covering the cleaning fluid nozzle 16 is provided at the bottom of the chamber 3, opposite to the upward discharge port 16A of the cleaning fluid nozzle 16. The nozzle cover 71 can be installed at the bottom of the chamber 3.

[0187] The nozzle cover 71 is an open, box-shaped component. The nozzle cover 71 includes a top wall 71A and multiple (e.g., two or four) side walls 71B connected to the top wall 71A. No orifices 71C are formed in the top wall 71A, but orifices 71C for the passage of cleaning fluid are formed in the side walls 71B. The side walls 71B are formed to be relatively long, extending in the Y direction. The area of ​​the orifices 71C is larger than that of the discharge port 16A.

[0188] The outlet of the cleaning fluid nozzle 16 faces upwards, for example. The upward-discharged cleaning fluid is blocked by the top wall 71A, but is supplied to the outside of the nozzle cover 71 through the orifice 71C of the side wall 71B. When the pressure inside the chamber 3 is reduced, the cleaning fluid nozzle 16 can easily become a source of mist. Therefore, the outlet 16A of the cleaning fluid nozzle 16 is positioned opposite the nozzle cover 71. Thus, even if mist is generated near the cleaning fluid nozzle 16, it can be contained by the nozzle cover 71, suppressing the diffusion of mist and storing the cleaning fluid inside the chamber 3. In addition, since the cleaning fluid flows through the orifice 71C of the side wall 71B, the flow momentum of the cleaning fluid can be suppressed.

[0189] In addition, to prevent the bottom surface of chamber 3 from obstructing the flow, a gap G3 can be formed between the nozzle cover 71 and the bottom surface of chamber 3.

[0190] (5) In Embodiment 1 and the various modifications (2) to (4) described above, each of the two cleaning fluid nozzles 16 is disposed at the bottom of the chamber 3 at a position overlapping with the treatment tank 2 when viewed from above. Regarding this, each of the two cleaning fluid nozzles 16 can be configured as follows: Figure 12 The cleaning fluid nozzle 16 is located in the lower corner of the chamber 3. The nozzle 16, positioned in the corner, can be positioned laterally to form a discharge port. Therefore, cleaning fluid is discharged laterally from the cleaning fluid nozzle 16.

[0191] (6) In Embodiment 1 and the various modifications (2) to (4) described above, each of the two cleaning fluid nozzles 16 is disposed at the bottom of the chamber 3 or on the bottom surface inside the chamber 3. Regarding this, it can be seen that... Figure 13 As shown, each of the two cleaning fluid nozzles 16 is positioned away from the bottom surface of the chamber 3. Furthermore, each of the two cleaning fluid nozzles 16 can be positioned below the shielding plate 63 and above the bottom surface of the chamber 3 on the inner wall of the chamber 3. That is, each of the two cleaning fluid nozzles 16 can be positioned in the lower part of the chamber 3. In addition, each cleaning fluid nozzle 16 is arranged facing the outer wall of the processing tank 2.

[0192] Furthermore, the control unit 81 can supply cleaning fluid into the chamber 3 from the cleaning fluid nozzle 16 while the chamber 3 is depressurized by the exhaust pump, allowing the cleaning fluid to contact the outer wall of the treatment tank 2. Since the liquid flows through the bottom surface of the chamber 3, it is relatively difficult for small particles to accumulate there. However, for example, the outer wall of the treatment tank 2 is a part where liquid does not easily flow even if there are attached, floating small particles, thus causing them to accumulate. By contacting the cleaning fluid with this part and storing it within the chamber 3, the small particles attached to the outer wall of the treatment tank 2 can be easily removed.

[0193] (7) In the above embodiments and modifications, the substrate processing apparatus 1 includes two exhaust pumps 47 and 57. In this respect, the substrate processing apparatus 1 may, for example, not include exhaust pump 57. That is, exhaust pump 47 can exhaust air into the chamber 3 via exhaust pipe 45 and exhaust air into the drain tank 53 via exhaust pipe 55.

[0194] For example, the on / off valve V7 is configured to control the flow rate of gas passing through the exhaust pipe 45. Additionally, the on / off valve V9 is configured to control the flow rate of gas passing through the exhaust pipe 55. Furthermore, the control unit 81 controls the flow rate of gas passing through the two exhaust pipes 45 and 55 by operating the two on / off valves V7 and V9. This results in the pressure value P2 in the drain tank 53 being lower than the pressure value P1 in the chamber 3.

[0195] (8) As described in the above embodiments and variations, the lifting of small particles in the lower part of the chamber 3 occurs when nitrogen is supplied and atmospheric pressure is restored in the chamber 3 (steps S17, S34, S53). In this regard, the lifting of small particles may also occur in steps S12, S28, S48, etc.

[0196] (9) In the above embodiments and modifications, for example in Figure 2 In step S06, a vapor of a water-repellent agent is supplied to make the substrate W water-repellent. Regarding this, when it is not necessary to make the substrate W water-repellent, step S06 and its related steps of supplying the vapor of the water-repellent agent can be omitted. Figure 6 Step S26 and Figure 9 The same applies to step S46.

[0197] This invention can be implemented in other specific forms without departing from its idea or essence; therefore, the scope of the invention is not limited to the above description but should be referred to the appended claims.

Claims

1. A substrate processing apparatus, characterized in that, have: A treatment tank for storing the treatment solution; A chamber that surrounds the processing tank; A solvent vapor nozzle supplies solvent vapor into the chamber; A cleaning fluid nozzle supplies cleaning fluid into the chamber; A water-repellent vapor nozzle supplies water-repellent vapor into the chamber; as well as Control Department The control unit performs immersion and drying processes during a preset period. The immersion process involves immersing the substrate in the processing liquid stored in the processing tank. The drying process uses solvent vapor supplied from the solvent vapor nozzle to dry the substrate, which has been treated in the processing liquid and then lifted from the processing tank. The control unit supplies cleaning fluid from the cleaning fluid nozzle into the chamber and immerses the treatment tank in the cleaning fluid stored in the chamber, thereby performing a chamber cleaning process to clean the chamber, including the outer wall of the treatment tank. The control unit performs the chamber cleaning process after the impregnation treatment. The control unit performs the drying process after cleaning the chamber. After the impregnation process, the control unit performs a water-repellent vapor supply process to supply water-repellent vapor from the water-repellent vapor nozzle into the chamber in order to make the substrate water-repellent. The control unit performs the chamber cleaning process after supplying the water-repellent vapor.

2. The substrate processing apparatus according to claim 1, characterized in that, It also includes an exhaust pump that vents air from the chamber. The cleaning fluid nozzle is located in the lower part of the chamber and supplies the cleaning fluid into the chamber. The control unit performs chamber cleaning while the chamber is depressurized using the exhaust pump.

3. The substrate processing apparatus according to claim 2, characterized in that, The exhaust pump vents air into the chamber through an exhaust port located on the side wall of the chamber on the side of the processing tank. The control unit performs the chamber cleaning process while using the exhaust pump to vent air from the chamber and depressurize the chamber.

4. The substrate processing apparatus according to claim 2, characterized in that, It also includes a shielding plate disposed between the outer wall of the processing tank and the inner wall of the chamber, shielding the atmosphere between the upper part and the lower part of the chamber, and the shielding plate having an opening to allow the processing liquid overflowing from the processing tank to flow into the lower part of the chamber.

5. The substrate processing apparatus according to claim 2, characterized in that, The cleaning fluid nozzle is located at the bottom of the chamber and overlaps with the treatment tank when viewed from above.

6. The substrate processing apparatus according to claim 2, characterized in that, The control unit performs the chamber cleaning process when the solvent vapor is supplied into the chamber from the solvent vapor nozzle.

7. The substrate processing apparatus according to claim 2, characterized in that, The control unit, while depressurizing the chamber using the exhaust pump, performs a discharge process to discharge the cleaning fluid from the outlet provided in the chamber. The control unit repeats the chamber cleaning process and the discharge process a preset number of times.

8. The substrate processing apparatus according to claim 2, characterized in that, It also includes an inert gas nozzle that supplies inert gas into the chamber. After the drying process, the control unit supplies inert gas into the chamber through the inert gas nozzle, thereby restoring the chamber from the depressurized state to atmospheric pressure.

9. The substrate processing apparatus according to claim 2, characterized in that, The cleaning fluid nozzles are arranged facing the outer wall of the treatment tank. When the control unit depressurizes the chamber using the exhaust pump, it causes the cleaning fluid to come into contact with the outer wall of the treatment tank and supplies the cleaning fluid into the chamber through the cleaning fluid nozzle.

10. The substrate processing apparatus according to claim 2, characterized in that, It also includes a nozzle cover, which is disposed at the bottom of the chamber opposite the upward-facing outlet of the cleaning fluid nozzle. The nozzle cover includes: a top wall; and a plurality of side walls connected to the top wall and having orifices for the flow of the cleaning fluid.

11. The substrate processing apparatus according to claim 1, characterized in that, The cleaning fluid nozzle is located at the bottom of the treatment tank and supplies the cleaning fluid into the tank. The control unit supplies the cleaning fluid from the cleaning fluid nozzle into the treatment tank at atmospheric pressure inside the chamber, stores the cleaning fluid overflowing from the treatment tank in the chamber, and immerses the treatment tank in the cleaning fluid stored in the chamber, thereby performing a chamber cleaning process to clean the chamber including the outer wall of the treatment tank.

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