Method for full tensor characterization of dielectric constant of magneto-optic thin films

By using the transfer matrix method and a modified elliptic polarimeter magnetic field device, combined with positive and negative magnetic field measurements, the full dielectric constant tensor of wafer-level magneto-optical thin films can be directly characterized. This solves the problem of incomplete and non-destructive measurement in existing technologies, achieving rapid and non-destructive dielectric constant characterization and supporting industrial applications of silicon-based optoelectronics.

CN117192223BActive Publication Date: 2026-05-29UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Filing Date
2023-09-08
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

Existing technologies cannot directly and completely characterize the full dielectric constant tensor of wafer-level magneto-optical thin films, and existing equipment cannot perform non-destructive measurements without damaging the wafer.

Method used

By employing the transfer matrix method and a modified elliptic polarimeter, combined with an applied magnetic field device, the diagonal elements of the dielectric constant tensor are fitted by measuring the ellipticity parameters and Mueller matrix under positive and negative magnetic fields. The off-diagonal elements are then inverted using the difference matrix to characterize the full dielectric constant tensor.

Benefits of technology

This method enables non-destructive and rapid full tensor characterization of dielectric constants in wafer-level magneto-optical thin films, filling the gap in non-destructive full tensor characterization of dielectric constants in wafer-level magneto-optical thin films and is suitable for industrial applications in silicon-based optoelectronics.

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Abstract

The present application belongs to the field of silicon-based optoelectronics, and particularly relates to a method for full tensor characterization of dielectric constant of magneto-optical film. The present application is based on transfer matrix method and modification of ellipsometer, and differential Mueller matrix of magneto-optical film under positive magnetic field and negative magnetic field is obtained by measurement of ellipsometer according to the characterization principle of transfer matrix method. Diagonal elements of dielectric constant tensor are obtained by fitting ellipsometric parameters according to structure model and dispersion model, and non-diagonal elements of dielectric tensor are obtained by parameter inversion of transfer matrix method. The present application firstly combines transfer matrix method and 4*4 Mueller matrix, and non-contact ellipsometric spectrum measurement is carried out under the condition of applied magnetic field by ellipsometer, so that full tensor characterization of dielectric constant of wafer-level magneto-optical film is realized without destroying wafer or carrying out sample processing, the vacancy of full tensor non-destructive characterization of dielectric constant of wafer-level magneto-optical film is filled, and the present application has great significance for further industrial application of magneto-optical film.
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