Modeling method of soi finfet devices suitable for various reliability effect coupling studies

Abstract

The application provides a modeling method of SOI FinFET devices suitable for various reliability effect coupling researches, a three-dimensional structure model of a FinFET device is obtained by using Sentaurus TCAD software and structural parameters modeling; simulation of total dose effect and simulation of hot carrier effect are carried out on the three-dimensional structure model, and a second electrical characteristic parameter after simulation coupling effect is obtained; the three-dimensional structure model is changed by using the second electrical characteristic parameter, so that the electrical characteristic parameter of the changed three-dimensional structure model is consistent with the second electrical characteristic parameter, thereby simulating the real working state of the SOI FinFET device under the condition of total dose coupling hot carrier effect. The application can effectively reduce the device simulation error, provide the accuracy of modeling, provide a model basis for more reliability effect coupling analysis of device simulation; in addition, the application has better convergence, and is suitable for various semiconductor devices with complex structures.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor device technology, specifically relating to a modeling method for SOI FinFET devices suitable for studying the coupling of multiple reliability effects. Background Technology

[0002] In recent years, the difficulty of space exploration missions has been continuously increasing. On the one hand, the depth of space exploration has gradually expanded from near Earth to near the Moon and Mars, which will expose spacecraft to a more complex space radiation environment. On the other hand, in a single space exploration mission, spacecraft need to collect more data, which places higher demands on the performance of the spacecraft's electronic systems. Therefore, future aerospace electronic systems require highly reliable advanced large-scale integrated circuits, and FinFETs, with their advantages of low leakage current, good subthreshold characteristics, and strong short-channel effect suppression, are strong candidates for aerospace integrated circuit design. FinFET is a new type of three-dimensional device, which is currently widely studied and applied due to its excellent gate control capability. SOI FinFET uses a variation of planar MOSFET, which wraps the conductive channel in a fin-shaped silicon thin film, allowing the gate and fin structure to have contact surfaces on both sides. The multi-gate structure gives it good carrier transport capability and effectively suppresses channel effects. Compared with BULK FinFET, SOI FinFET devices eliminate latch-up effect, have lower parasitic capacitance and leakage current, and better performance. However, due to the presence of the buried oxide layer, SOI FinFETs are more sensitive to irradiation than bulk silicon devices. Furthermore, devices operating in space for extended periods are also affected by hot carriers, leading to reduced device lifetime. Because SOI FinFET devices are expensive, and reliability studies often require stringent experimental conditions and a large number of samples, research on SOI FinFET devices by scholars both domestically and internationally primarily focuses on TCAD simulation studies.

[0003] SOI FinFET devices are three-dimensional devices with complex structures. Convergence becomes a difficult problem to overcome when simulating reliability effects, especially for coupled simulations of multiple effects. Existing methods for simulating coupled effects generally employ the same Surface module for excitation.

[0004] Coupled simulation of multiple effect models or simulation of reliability effect models in different Sdevice modules followed by save and load may be relatively easy to converge for two-dimensional device models or simple three-dimensional models, but it is difficult to achieve convergence for complex three-dimensional models such as SOI FinFET, BULK FinFET and GAA. Summary of the Invention

[0005] To address the aforementioned problems in existing technologies, this invention provides a modeling method for SOI FinFET devices suitable for studying the coupling of various reliability effects. The technical problem to be solved by this invention is achieved through the following technical solution:

[0006] This invention provides a modeling method for SOI FinFET devices suitable for studying the coupling of multiple reliability effects, including:

[0007] S100: Obtain the structural parameters of the FinFET device based on SOI technology, and use Sentaurus TCAD software and the structural parameters to model the three-dimensional structural model of the FinFET device.

[0008] S200, Simulate the total dose effect of the three-dimensional structural model to obtain the first electrical characteristic parameter of the simulated total dose effect;

[0009] S300, perform hot carrier effect simulation on the three-dimensional structural model after simulating the total dose effect to obtain the second electrical characteristic parameters after simulating the coupling effect; wherein, the coupling effect is the effect after coupling the total dose effect and the hot carrier effect;

[0010] S400, the three-dimensional structural model is modified using the second electrical characteristic parameter so that the electrical characteristic parameter of the modified three-dimensional structural model is consistent with the second electrical characteristic parameter, thereby simulating the actual working state of the SOI FinFET device under the total dose coupled hot carrier effect condition.

[0011] Beneficial effects:

[0012] 1. In simulating the total dose effect, this invention simultaneously considers oxide layer trap charge and interface state trap charge. Furthermore, the interface state generation rate is constrained by function fitting, remaining almost unchanged in the early stages of the simulation, while the concentration increases exponentially in the later stages. This better aligns with the interface state generation mechanism, resulting in more accurate simulation results.

[0013] 2. This invention uses the method of adding a fixed charge and activating the lucky hot carrier model to simulate the coupling effect between the total dose and the hot carrier, which has better convergence than activating two reliable physical models at the same time; and the fixed charge concentration distribution is obtained by simulating the TID effect, which ensures the accuracy of the simulation results while also having better convergence.

[0014] 3. This invention modifies the electrical parameter characteristics of SOIFinFET devices under the coupling effect of total iodine (TID) and hot carrier injection (HCI) on the SOIFinFET device, thereby establishing a SOIFinFET device model based on the TID (Total Ionizing Dose) effect and the HCI (Hot Carrier Injection) effect. Compared with traditional modeling that does not consider these two effects, it can effectively reduce device simulation errors, improve modeling accuracy, and provide a model foundation for subsequent reliability effect analysis.

[0015] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the Sentaurus software structure used in the simulation of this invention;

[0017] Figure 2 This is a flowchart illustrating the overall implementation of the present invention;

[0018] Figure 3 This is a flowchart of a FinFET device based on SOI technology obtained by modeling using Sentaurus software according to the present invention.

[0019] Figure 4 This is a schematic diagram of the three-dimensional structure of a FinFET device based on SOI technology, obtained by modeling using Sentaurus software in this invention.

[0020] Figure 5 This is the invention of Figure 4 The model was built and the calibration diagram was based on the transfer characteristics of the experimental data.

[0021] Figure 6 This invention is for Figure 4 Simulation results of total dose effect in FinFET. Detailed Implementation

[0022] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.

[0023] Combination Figures 1 to 6 As shown, this invention provides a modeling method for SOIFinFET devices suitable for studying the coupling of multiple reliability effects, including:

[0024] S100: Obtain the structural parameters of the FinFET device based on SOI technology, and use Sentaurus software and the structural parameters to model the three-dimensional structural model of the FinFET device.

[0025] Reference Figure 1 , Figure 1 The simulation software used in this invention, Sentaurus TCAD, includes the following four tools: SDE, Sdevice, SentaurusVisual, and Inspect. SDE is used to build the basic device structure and set doping and mesh information. Sdevice is used to calculate the mesh and solve semiconductor equations, and includes six parts: File, Physics, Plot, Math, Electrode, and Solve. File contains input and output files; Physics defines the physical model for activating various effects in the simulation; Plot saves the solved variable information; Math is the calculation tool; Electrode defines the device structure electrodes and sets various bias states; and Solve primarily solves the static and dynamic Poisson equations. SentaurusVisual is used to view the structure and physical parameters of the simulated device; and Inspect is mainly used to view the electrical parameter curves of the device after simulating various effects.

[0026] S200, Simulate the total iodizing dose (TID) effect on the three-dimensional structural model to obtain the first electrical characteristic parameters of the simulated total iodizing dose effect;

[0027] S300, perform hot carrier injection (HCI) simulation on the three-dimensional structural model after simulating the total dose effect, and obtain the second electrical characteristic parameters after simulating the coupling effect; wherein, the coupling effect is the effect after coupling the total dose effect and the hot carrier effect;

[0028] S400, the three-dimensional structural model is modified using the second electrical characteristic parameter so that the electrical characteristic parameter of the modified three-dimensional structural model is consistent with the second electrical characteristic parameter, thereby simulating the actual working state of the SOI FinFET device under the total dose coupled hot carrier effect condition.

[0029] This invention modifies the device model based on the distribution of trapped charges in the internal oxide layer and the interface state trap charge density, which are obtained after simulating the coupling effect of total dose and hot carriers. Then, the electrical characteristic parameters of the device model affected by coupling are corrected, establishing a SOIFinFET device model based on the coupling effect of total dose and hot carriers. Electrical simulations are then performed under the simulated total dose and hot carrier coupling effect environment, and the doping concentration and concentration diffusion coefficient, mesh precision, and calculation step size are modified to further refine the IV characteristic curve of the device model.

[0030] In one specific embodiment of the present invention, S100 includes:

[0031] S110, Obtain the structural parameters of the FinFET device based on SOI technology;

[0032] In the SOI-based FinFET device, from bottom to top, there is a substrate, a BOX buried oxide layer, a source region and a drain region at both ends of the BOX buried oxide layer, and a channel region between the source region and the drain region. The channel region is wrapped with gate metal to form a gate.

[0033] S120, Based on the structural parameters, the initial structural model of the FinFET device is obtained by using SDE in the Sentaurus software to model each layer of the FinFET device.

[0034] S130, The initial structural model is subdivided into meshes to obtain a subdivided initial structural model;

[0035] S140, Simulate the electrical characteristics of the FinFET device and output the simulation results as a visualized 3D graph;

[0036] S150, The visualized 3D map is drawn into the initial structural model according to the mesh subdivision result;

[0037] S160, Set the doping parameters of each layer in the initial structural model to obtain a three-dimensional structural model of the FinFET device based on SOI technology.

[0038] In Sentaurus software, SDE is used to construct FinFET structures. The device structure is created using the SentaurusProcess module. (Refer to...) Figure 3 The device model is then constructed. First, a buried oxide layer (BOX) is created for the FinFET device. Based on this buried oxide layer, the source / drain regions are extended upwards, and the sub-substrate portion is extended downwards. A channel (fin) is constructed between the source and drain. The `(sdegeo: set-default-boolean "BAB")` statement can be used to set the channel length to the same as the buried oxide layer. However, since the source and drain regions already exist, the fins will not replace them; the actual channel length is the buried oxide layer length minus the source / drain region length. Similarly, the gate oxide layer can be constructed using blocks in the same way, which is much simpler than defining the gate oxide layer with three regions using the `(sdegeo: set-default-boolean "ABA")` statement.

[0039] The mesh is re-divided using SentaurusStructureEditor or SentaurusMesh. In this approach, mesh subdivision is automatically controlled via the dvs.cmd file. SentaurusDevice is used to simulate the electrical characteristics of the device. Finally, TecplotSV is used to output the simulation results as a visualized 3D plot to plot the electrical characteristics. Afterwards, doping information is set, and a FinFET device model is created. Its structure, from bottom to top, consists of the substrate, buried oxide layer, BOX layer, and above that, the source region, channel, and drain region. The gate region surrounds the channel. Figure 4 ,in, Figure 4 The left side shows a three-dimensional device structure diagram. Figure 4 The right side shows the grid distribution diagram of the three-dimensional device structure.

[0040] In one specific embodiment of the present invention, S200 includes:

[0041] S210, set the total dose effect irradiation dose rate and irradiation time;

[0042] The total dose-effect dose rate was 1 krad(SiO2) / s, and the irradiation times of 100s, 200s, 300s, 500s, and 700s corresponded to total doses of 100 krad(SiO2), 200 krad(SiO2), 300 krad(SiO2), 500 krad(SiO2), and 700 krad(SiO2), respectively. The gate voltage was V0. gs The drain voltage is 0V, V. Ds The voltage is 0.8V, and the source and body voltages are both 0V.

[0043] S220, add traps defects in the BOX buried oxide layer and at the interface between the channel and the BOX buried oxide layer, and activate the Radiation model to simulate the positively charged oxide trap charge that traps holes.

[0044] This step involves adding traps defects in the buried oxide layer and at the interface between the channel and the buried oxide layer, with a defect concentration of 1e18. Next, the silica material of the BOX buried oxide layer is replaced with a newly defined oxide semiconductor material, OxideAsSemiconductor, and the OxideAsSemiconductor parameter file is modified to match the silica material. To make the simulation results closer to the experiment, the hole mobility needs to be adjusted, and the interface state generation rate needs to be constrained using function fitting.

[0045] S230, the irradiated induced interface state in the Sentaurus software is fitted with a function, and the fitted function is imported into the calculation model to obtain the calculation model for the irradiated induced interface state.

[0046] Add the radiation model code to the Physics section of the first Sdevice and activate the irradiation model to simulate the total dose effect at different doses.

[0047]

[0048] S240, by changing the parameter file of the oxide layer trap charge and the trap charge parameter file of the irradiated induced interface state, and setting the irradiation dose rate and irradiation time of the total dose effect according to S210.

[0049] S250 simulates the three-dimensional structural model with added traps defects according to the set irradiation dose rate and irradiation time, and obtains the first electrical characteristic parameters of the FinFET device with simulated total dose effect.

[0050] In one specific embodiment of the present invention, S220 includes:

[0051] S221, Using the Sentaurus software, add traps defects to the BOX buried oxide layer and at the interface between the channel and the BOX buried oxide layer respectively;

[0052] S222, the Sentaurus software replaces the silicon dioxide material of the BOX buried oxide layer with a newly defined oxide semiconductor material, and sets the parameter file of the oxide semiconductor material to be consistent with that of silicon dioxide;

[0053] This step modifies the hole mobility to make it better captured by defects, so that holes are not swept out of the buried oxide layer along with electrons due to software settings issues.

[0054] S223, change the hole mobility and activate the Radiation model to simulate the positively charged oxide trap charge that traps holes.

[0055] Due to software configuration issues, the Radiation model does not function correctly in non-semiconductor materials. It is necessary to replace the silicon dioxide material of the BOX buried oxide layer with a newly defined oxide semiconductor material, OxideAsSemiconductor, and set the OxideAsSemiconductor parameter file to be consistent with silicon dioxide. Then, the hole mobility is modified to better capture defects, thereby enabling the simulation of oxide layer trap charges. Simulation of interface state trap charges can be achieved by adding traps defects at the channel-buried oxide layer interface and activating the Radiation model. Since the number of interface states remains almost unchanged in the early stages of generation, but increases exponentially and quickly reaches saturation in the later stages, function fitting constraints are required for irradiated induced interface states. The fitted function model is then imported into the TID calculation model to obtain the calculation model corrected for irradiated induced interface states. After modifying the parameter files for oxide layer trap charges and interface state trap charges, the irradiation time and dose are set, and a total dose effect simulation is performed to obtain the electrical parameter curves after simulating the total dose effect. (Refer to...) Figure 6 As shown.

[0056] In one specific embodiment of the present invention, S300 includes:

[0057] S310 sets the stress parameters for the hot carrier effect;

[0058] The stress parameters of this invention include: device temperature of 300K (room temperature), and voltages at each electrode: gate voltage V. gs The drain voltage is 1.5V, and the drain voltage V is... Ds The voltages are 2.8V, 29V, and 3V, with the source and body voltages at 0V. The stress time is set to 1s, 100s, 300s, 500s, 1000s, 3000s, 5000s, and 10000s.

[0059] S320, add positive and negative charges of the same concentration and distribution to the FinFET device according to the induced charges in the device model of the simulated total dose effect;

[0060] In the S330, the lucky hot carrier model is called in TCAD software to simulate the movement of electrons in the channel, thereby breaking the Si-H bond to form interface states and oxide layer trap charges, realizing the coupling simulation of total dose and hot carrier effect, and obtaining the second electrical characteristic parameters of the FinFET device with simulated coupling effect. Figure 5 As shown.

[0061] This invention extracts the concentration and distribution of induced charges inside an SOI FinFET device after being irradiated with a dose of 700 klad (SiO2) in the ON-biased state from a file with the .tdr extension generated by previous simulations of the TID effect.

[0062] Use the following code in the second Sdevice module to add positive and negative charges with the same concentration and distribution:

[0063] Physics(Material="OxideAsSemiconductor")

[0064] {Charge(Conc=le18)}

[0065] Physics(MaterialInterface="OxideAsSemiconductor / Silicon")

[0066] {Charge(Conc=le17)}

[0067] Add the lucky hot carrier model code to the Physics section of the second Sdevice to obtain the second electrical characteristic parameters of the device after simulation of the total dose effect coupled with the hot carrier effect:

[0068] Physics(RegionInterface="Gatox / Body")

[0069] {traps((eHCSDegradation(SHE BondDispersion)

[0070] Acceptor Level EnergyMid=fromMidBandGap))

[0071] GateCurrent(GateName="gate"eLucky(CarrierTempDrive))

[0072] GateCurrent(GateName = "gate"DirectTunneling)} and activate it.

[0073] This invention extracts the internal trap charge concentration and interface state concentration and distribution of the simulated total dose effect, and adds fixed charges with the same concentration and distribution to a new device model. Then, by calling the Lucky Electron Model in TCAD software, the simulation shows that electrons in the channel are accelerated by the channel electric field and move towards the channel-gate oxide interface through collisions, breaking Si-H bonds to form interface states and oxide layer trap charges, thus realizing the coupled simulation of the total dose and hot carrier effect, and obtaining the electrical parameter curves after the simulated total dose effect is coupled with the hot carrier effect.

[0074] In one specific embodiment of the present invention, S400 includes:

[0075] S410, using TCAD software to extract the concentration of the trapped charge and the concentration of the interface state of the oxide layer from the first electrical characteristic parameters;

[0076] S420, the three-dimensional structure model is modified according to the concentration of trap charge and the concentration of interface state, so that the electrical parameters of the modified three-dimensional structure model are consistent with the second electrical characteristic parameters, thereby simulating the real working state of SOI FinFET device.

[0077] The present invention modifies the electrical parameters of the three-dimensional structural model as follows:

[0078] A fixed charge is added to the BOX buried oxide layer and Si / SiO2 interface of the three-dimensional structural model. The doping concentration and diffusion coefficient of each layer, as well as the mesh precision and calculation step size, are modified to ensure that the electrical parameters of the three-dimensional structural model are curve-fitted with the second electrical characteristic parameters, thereby simulating the actual operating state of an SOI FinFET device. The second electrical characteristic parameters include the transfer characteristic parameters of the FinFET device, including threshold voltage, off-state current, maximum transconductance, and saturation drain current.

[0079] This invention utilizes structural parameters of SOIFinFET devices obtained from other experimental data to establish a three-dimensional structural model of the SOIFinFET device using simulation software. Preliminary calibration of its IV electrical characteristic curves is performed through electrical simulation. Further simulations of TID and HCI coupling effects are then conducted on the SOIFinFET device model. The electrical characteristic parameters of the SOIFinFET device model are corrected under the influence of coupling effects. Finally, a SOIFinFET device model based on the total dose and hot carrier coupling effect is established, which can reduce simulation errors, improve modeling accuracy, and enhance the accuracy and convergence of reliability analysis. This provides a device foundation for subsequent simulations of other reliability effects such as single-event events, NBTI, and strong electromagnetic injection.

[0080] In one specific embodiment of the present invention, after S400, the modeling method for SOI FinFET devices applicable to the study of multiple reliability effect couplings further includes:

[0081] The reliability of the FinFET device was verified by performing reliability effect simulation.

[0082] This invention corrects the original three-dimensional structure model of the device by adding a fixed charge based on the concentration and distribution of the internal trap charge in the extracted simulation coupling effect results. It can continue to simulate other reliability effects such as single-particle, NBTI, and strong electromagnetic injection without affecting the convergence and with more accurate results.

[0083] This invention utilizes the Sentaurus software within the TCAD tool to model and obtain a three-dimensional SOI FinFET device structure, and performs preliminary calibration of the device based on experimental data or process library data. The silicon dioxide material of the device's BOX buried oxide layer is replaced with a newly defined semiconductor material, whose parameter files are consistent with those of silicon dioxide. Defects are added to the device's BOX buried oxide layer, and the Radiation model is activated to simulate the trapping charge of positively charged holes in the oxide layer. Then, defects are added at the channel-gate oxide layer interface, the Radiation model is activated, and the irradiation-induced electron-hole pairs are functionally fitted and constrained to simulate the process of trapping negative electrons and generating interface state trap charges. The simulation yields the electrical parameter degradation curves of the device after irradiation simulation. The concentration and distribution of the trap charge interface states inside the device are extracted. A fixed charge with the same concentration distribution as the device after the simulated total dose is added to another Sdevice module, and the hot carrier effect is simulated to obtain the performance degradation of the device under the coupled simulation of the total dose effect and the hot carrier effect. Subsequently, by extracting the trap charge concentration and distribution inside the device after simulation coupling effects, fixed charges are added to the gate oxide layer and buried oxide layer of the original device model to correct the electrical parameter characteristics of the SOIFinFET device, making it fit with the electrical characteristic parameter curves of the simulated TID (Total Ionizing Dose) and HCI (Hot Carrier Injection) coupling effects, thereby establishing an SOI FinFET device model based on the TID (Total Ionizing Dose) effect and the HCI (Hot Carrier Injection) effect. This invention provides a method for building and optimizing SOIFinFET device models based on the total dose coupled hot carrier effect. Compared with traditional modeling that does not consider these two effects, it can effectively reduce device simulation errors and improve modeling accuracy, providing a model foundation for subsequent coupling with more reliability effects such as NBTI, single-event, and strong electromagnetic injection; compared with the method of directly activating coupled simulation of multiple reliability effect physical models on the same device or simulating on different devices and then saving and loading, it has better convergence, and is not only applicable to two-dimensional devices, but also converges better in complex three-dimensional devices such as SOI FinFET and GAA.

[0084] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0085] Although this application has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, the disclosure, and the appended claims in carrying out the claimed application. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality.

[0086] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.

Claims

1. A modeling method for SOI FinFET devices suitable for studying the coupling of multiple reliability effects, characterized in that, include: S100: Obtain the structural parameters of the FinFET device based on SOI technology, and use Sentaurus TCAD software and the structural parameters to model the three-dimensional structural model of the FinFET device. S200, Simulate the total dose effect of the three-dimensional structural model to obtain the first electrical characteristic parameter of the simulated total dose effect; S300, perform hot carrier effect simulation on the three-dimensional structural model after simulating the total dose effect to obtain the second electrical characteristic parameters after simulating the coupling effect; wherein, the coupling effect is the effect after coupling the total dose effect and the hot carrier effect; S400, the three-dimensional structure model is modified using the second electrical characteristic parameter so that the electrical characteristic parameter of the modified three-dimensional structure model is consistent with the second electrical characteristic parameter, thereby simulating the actual working state of the SOI FinFET device under the total dose coupled hot carrier effect condition; The S300 includes: S310 sets the stress parameters for the hot carrier effect; S320, add positive and negative charges of the same concentration and distribution to the FinFET device according to the induced charges in the device model of the simulated total dose effect; S330 uses the lucky hot carrier model in TCAD software to simulate the movement state of electrons in the channel, thereby breaking the Si-H bond to form interface states and oxide layer trap charges, realizing the coupling simulation of total dose and hot carrier effect, and obtaining the second electrical characteristic parameters of the FinFET device with simulated total coupling effect. The S400 includes: S410 uses TCAD software to extract the concentration of trapped charges and interface states in the oxide layer from the simulated coupling effect of the device. S420, the three-dimensional structure model is modified according to the concentration of trap charge and the concentration of interface states, so that the electrical parameters of the modified three-dimensional structure model are consistent with the second electrical characteristic parameters, thereby simulating the actual working state of the SOI FinFET device; modifying the electrical parameters of the three-dimensional structure model includes: A fixed charge is added to the BOX buried oxide layer and Si / SiO2 interface of the three-dimensional structural model, and the doping concentration and diffusion coefficient of each layer, as well as the mesh precision and calculation step size, are modified to make the electrical parameters of the three-dimensional structural model fit the curves of the second electrical characteristic parameters, thereby simulating the real working state of the SOI FinFET device; the second electrical characteristic parameters include the transfer characteristic parameters of the FinFET device, which include threshold voltage, off-state current, maximum transconductance, and saturation drain current.

2. The modeling method for SOI FinFET devices applicable to the study of multiple reliability effect couplings as described in claim 1, characterized in that, S100 includes: S110, Obtain the structural parameters of the FinFET device based on SOI technology; S120, Based on the structural parameters, the initial structural model of the FinFET device is obtained by modeling each layer of the FinFET device in Sentaurus TCAD software. S130, The initial structural model is subdivided into meshes to obtain a subdivided initial structural model; S140, Simulate the electrical characteristics of the FinFET device and output the simulation results as a visualized 3D graph; S150, The visualized 3D map is drawn into the initial structural model according to the mesh subdivision result; S160, Set the doping parameters of each layer in the initial structural model to obtain a three-dimensional structural model of the FinFET device based on SOI technology.

3. The modeling method for SOI FinFET devices applicable to the study of multiple reliability effect couplings according to claim 2, characterized in that, In S110, the FinFET device based on SOI technology consists of a substrate and a BOX buried oxide layer from bottom to top. A source region and a drain region are provided at both ends of the BOX buried oxide layer, and a channel region is located between the source region and the drain region. The channel region is wrapped with gate metal to form a gate.

4. The modeling method for SOI FinFET devices applicable to the study of multiple reliability effect couplings according to claim 3, characterized in that, S200 includes: S210, set the total dose effect irradiation dose rate and irradiation time; S220, add traps defects in the BOX buried oxide layer and at the interface between the channel and the BOX buried oxide layer, and activate the Radiation model to simulate the positively charged oxide trap charge that traps holes. S230, the irradiated induced interface state in the Sentaurus software is fitted with a function, and the fitted function is imported into the calculation model to obtain the calculation model for the irradiated induced interface state. S240, by changing the parameter file of the oxide layer trap charge and the trap charge parameter file of the irradiated induced interface state, and setting the irradiation dose rate and irradiation time of the total dose effect according to S210. S250 simulates the three-dimensional structural model with added traps defects according to the set irradiation dose rate and irradiation time, and obtains the first electrical characteristic parameters of the FinFET device with simulated total dose effect.

5. The modeling method for SOI FinFET devices applicable to the study of multiple reliability effect couplings according to claim 4, characterized in that, S220 includes: S221, Using the Sentaurus software, add traps defects to the BOX buried oxide layer and at the interface between the channel and the BOX buried oxide layer respectively; S222, the Sentaurus software replaces the silicon dioxide material of the BOX buried oxide layer with a newly defined oxide semiconductor material, and sets the parameter file of the oxide semiconductor material to be consistent with that of silicon dioxide; S223, change the hole mobility and activate the Radiation model to simulate the positively charged oxide trap charge that traps holes.

6. The modeling method for SOI FinFET devices applicable to the study of multiple reliability effect couplings according to claim 1, characterized in that, Following S400, the modeling method for SOI FinFET devices applicable to studies of multiple reliability effect couplings also includes: The reliability of the FinFET device was verified by performing reliability effect simulation.

Images