Hemispherical resonator variable thickness metal film layer plating device and method

Abstract

The application discloses a kind of half-ball harmonic oscillator variable-thickness metal film layer plating device and method, the device includes revolution platform (1), lifting rod (2), rotation platform (3), half-ball harmonic oscillator clamp (4) and mask sheltering board (7).The rotation platform (3) is installed on revolution platform (1), is moved and positioned by revolution platform (1) driving rotation platform (3);The lifting rod (2) is installed on rotation platform (3), and rotation platform (3) drives lifting rod (3) to make rotation motion;The upper end of lifting rod (2) is connected with half-ball harmonic oscillator clamp (4), and lifting rod (2) drives half-ball harmonic oscillator clamp (4) to lift motion;The half-ball harmonic oscillator clamp (4) is used to hold and fix in the lower support rod of half-ball harmonic oscillator;The mask sheltering board (7) is located above half-ball harmonic oscillator clamp (4), and the mask sheltering board (7) has three stations, first station (7-1) is used for half-ball harmonic oscillator inner spherical surface film layer plating, second station (7-2) is used for half-ball harmonic oscillator lip along position film layer plating, and third station (7-3) is used for half-ball harmonic oscillator support rod upper part film layer secondary plating.The application greatly improves film plating efficiency, and reduces the influence of metal film layer on half-ball harmonic oscillator vibration performance.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of hemispherical resonator manufacturing, in particular to a plating device and method for a hemispherical resonator metal conductive film layer. BACKGROUND

[0002] The hemispherical resonator gyroscope has been widely concerned in recent years due to its high precision, small size, low cost and other advantages. The hemispherical resonator, as the core sensitive component of the hemispherical resonator gyroscope, is formed by precise processing of quartz glass. In order to realize capacitive vibration excitation and signal detection, a metal film layer needs to be plated on the inner surface of the hemispherical resonator, the lip edge and the support column surface to form a conductive structure. As an important part of the processing and manufacturing of the resonator, the research on the mask, device and method involved in the plating of the metal film layer has been carried out a lot. However, the existing technology is basically aimed at how to realize the plating of the film layer of each part, how to improve the uniformity of the film layer of each part, and how to reduce the stress of the film layer. There is no public scheme for how to reduce the influence of the metal film layer on the performance of the hemispherical resonator by improving the thickness and other parameters of the film layer of different parts of the resonator.

[0003] Based on the theoretical analysis of the influence of the thickness parameters of the hemispherical resonator film layer on the key indicators such as the quality factor and the frequency difference of the hemispherical resonator, for the hemispherical resonator structure, in order to reduce the influence of the metal film layer on the quality factor of the resonator, the film layer thickness of the inner surface of the resonator should be as thin as possible under the premise of meeting the conductivity requirement. The film layer thickness of the lip edge position should be thicker to ensure the continuity of the capacitor plate as the core structure of the signal detection. The bottom end of the support column is usually connected to the outside by bonding or welding to apply a high voltage of about 200V for electrical connection. In order to ensure the conductivity and connection reliability, and because this part has less influence on the performance of the hemispherical resonator, the metal film layer should be as thick as possible. Therefore, the thickness of the metal film layer on the surface of the hemispherical resonator should show a trend of "the thickness of the bottom end of the support column > the thickness of the lip edge > the thickness of the inner surface of the resonator". There is no device or scheme to achieve the above indicators in the existing public technical means. SUMMARY

[0004] In order to solve the problem of improving the thickness and other parameters of the film layer of different parts of the resonator and reducing the influence of the metal film layer on the performance of the hemispherical resonator, the present application aims to provide a hemispherical resonator variable thickness metal film layer plating device and method.

[0005] To solve the above technical problems, the technical scheme of the hemispherical resonator variable thickness metal film layer plating device provided by the present application is as follows:

[0006] The device comprises a revolution platform, a lifting rod, a rotation platform, a hemispherical resonator clamp and a mask shielding plate,

[0007] The rotation platform is installed on the revolution platform, and the revolution platform drives the rotation platform to move and position;

[0008] The lifting rod is installed on the rotation platform, and the rotation platform drives the lifting rod to rotate;

[0009] The upper end of the lifting rod is connected with the hemispherical resonator clamp, and the lifting rod drives the hemispherical resonator clamp to move up and down;

[0010] The hemispherical resonator clamp is used for holding and fixing the lower support rod of the hemispherical resonator;

[0011] The mask shielding plate is located above the hemispherical resonator clamp, and the mask shielding plate has three workstations; the first workstation on the mask shielding plate is used for coating a film layer on the inner spherical surface of the hemispherical resonator, is a hollow circle, and the diameter of the circle is equal to the diameter of the inner spherical surface of the hemispherical resonator; the second workstation on the mask shielding plate is used for coating a film layer on the lip edge position of the hemispherical resonator, and includes a hollow circular ring and a hollow protruding structure; the inner diameter of the circular ring is equal to the diameter of the inner spherical surface of the hemispherical resonator, the outer diameter of the circular ring is equal to the diameter of the outer spherical surface of the hemispherical resonator, the center disc of the circular ring is connected and fixed with the outer mask shielding plate through two connecting bridges, the inner diameter of the hollow protruding structure is slightly larger than the inner diameter of the support column of the hemispherical resonator, and the inner height of the hollow protruding structure is slightly larger than the height of the lip edge of the support column of the hemispherical resonator; the support column of the hemispherical resonator can be lifted into the hollow protruding structure, so as to ensure that the lip edge of the hemispherical resonator reaches the lower surface of the mask shielding plate; and the third workstation on the mask shielding plate is used for secondary coating of a film layer on the upper part of the support rod of the hemispherical resonator, is a hollow circle, and the diameter of the circle is slightly larger than the diameter of the support rod of the hemispherical resonator.

[0012] Further, the mask shielding plate is circular, the central axis of the mask shielding plate coincides with the central axis of the revolution platform, the central distances of the three workstations from the central axis of the mask shielding plate are the same, and the central distance of the rotation platform from the central axis of the revolution platform is the same; the rotation platform can drive the rotation platform to rotate around the axis.

[0013] Based on the hemispherical resonator variable-thickness metal film layer coating device, the application provides a hemispherical resonator variable-thickness metal film layer coating method, which comprises the following steps:

[0014] (1) assembling the hemispherical resonator on the hemispherical resonator clamp on the rotation platform, and integrating the hemispherical resonator variable-thickness metal film layer coating device in a vacuum chamber with a predetermined vacuum degree;

[0015] (2) controlling the hemispherical resonator to be positioned below the first workstation by the revolution platform, and controlling the hemispherical resonator to be lifted to a distance of 0.2mm-0.5mm from the lower surface of the mask shielding plate by the lifting rod;

[0016] (3) The rotation platform controls the rotation of the hemispherical resonator, and the inner spherical surface of the hemispherical resonator starts to be coated according to the set film layer coating process parameters;

[0017] (4) After the first station coating is completed, the revolution platform controls the position of the hemispherical resonator to be below the second station, and the lifting rod controls the hemispherical resonator to rise to the same horizontal plane of the upper surface of the mask shielding plate.

[0018] (5) The rotation platform controls the rotation of the hemispherical resonator, and the lip edge of the hemispherical resonator and the support column start to be coated according to the set film layer coating process parameters.

[0019] (6) After the second station coating is completed, the revolution platform controls the position of the hemispherical resonator to be below the third station, and the lifting rod controls the hemispherical resonator to rise to a distance of 0.2mm-0.5mm from the lower surface of the mask shielding plate 7.

[0020] (7) The rotation platform controls the rotation of the hemispherical resonator, and the support column of the hemispherical resonator starts to be coated according to the set film layer coating process parameters, and the film layer coating is completed.

[0021] In view of the actual demand for the thickness of the film layer on the surface of the hemispherical resonator at different positions, the application provides a hemispherical resonator variable-thickness metal film layer coating device and method, which improves the comprehensive performance of the metal film layer of the hemispherical resonator and reduces the influence of the metal film layer on the vibration performance of the hemispherical resonator, thereby providing strong technical support for improving the performance of the hemispherical resonator gyroscope.

[0022] (1) By designing a multi-station mask shielding plate, the revolution platform controls the single-coating position, and under the premise of single vacuum extraction, the technical requirement of the thickness of the metal film layer on the surface of the hemispherical resonator "support column position thickness> lip edge position thickness> inner spherical surface position thickness" can be met according to the actual application demand of the hemispherical resonator, thereby greatly improving the coating efficiency and reducing the influence of the metal film layer on the vibration performance of the hemispherical resonator.

[0023] (2) In the application, each part of the resonator rotates around its own axis during the film layer coating process, which can avoid the problem of poor film layer uniformity caused by the shielding of the resonator itself structure, and different rotation angular velocity parameters are formed according to different film layer thickness requirements, which can further improve the uniformity of the circumferential film layer. BRIEF DESCRIPTION OF DRAWINGS

[0024] The accompanying drawings, which are included to provide a further understanding of the embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is to be understood that the drawings are solely for purposes of illustration and are not intended to limit the application. It is to be further understood that the drawings can not be to scale and that, unless otherwise specifically mentioned herein, elements from one drawing can be employed with elements from another drawing.

[0025] Figure 1 A schematic structural view of a half-sphere resonator variable-thickness metal film layer plating device is provided for the specific embodiments of the application.

[0026] Figure 2 A front view of a half-sphere resonator is provided for the specific embodiments of the application.

[0027] Figure 3 A top view of a mask shielding plate is provided for the specific embodiments of the application.

[0028] Figure 4 A sectional view of a first station 7-1 in a mask shielding plate is provided for the specific embodiments of the application.

[0029] Figure 5 A sectional view of a second station 7-2 in a mask shielding plate is provided for the specific embodiments of the application.

[0030] Figure 6 A sectional view of a third station 7-3 in a mask shielding plate is provided for the specific embodiments of the application.

[0031] The above-mentioned drawings include the following reference signs:

[0032] 1 is a revolution platform, 2 is a lifting rod, 3 is a rotation platform, 4 is a half-sphere resonator clamp, 5 is a screw fixing hole, 6 is a half-sphere resonator, 7 is a mask shielding plate, 7-1 is a first station, 7-2 is a second station, and 7-3 is a third station. DETAILED DESCRIPTION

[0033] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict. The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings of the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. The description of the at least one exemplary embodiment is actually only illustrative, but not as any limitation on the application and use of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0034] Figure 1The device includes a revolution platform 1, a lifting rod 2, a rotation platform 3, a hemispherical resonator clamp 4, and a mask shielding plate 7.

[0035] The rotation platform 3 is installed on the revolution platform 1, and the revolution platform 1 can drive the rotation platform 3 to rotate around an axis and can accurately stay at a certain fixed position.

[0036] The lifting rod 2 is installed on the rotation platform 3, and the rotation platform 3 can drive the lifting rod 3 to rotate.

[0037] The upper end of the lifting rod 2 is connected to the hemispherical resonator clamp 4, and the lifting rod 2 can drive the hemispherical resonator clamp 4 to move up and down; when it goes down, the hemispherical resonator is separated from the mask shielding plate 7, and when it goes up, the lip edge of the hemispherical resonator can be on the same horizontal plane as the lower surface of the mask shielding plate 7.

[0038] The hemispherical resonator clamp 4 is used to hold and fix the hemispherical resonator (the front view of the hemispherical resonator is as shown in Figure 2 The hemispherical resonator clamp 4 fastens the lower support column of the hemispherical resonator through screws.

[0039] The mask shielding plate 7 is located above the hemispherical resonator clamp 4, and the mask shielding plate 7 is circular, with the central axis coinciding with the central axis of the revolution platform 1. The mask shielding plate 7 has three workstations, and the center distance of the three workstations from the axis of the mask shielding plate 7 is the same as the center distance of the rotation platform 3 from the axis of the revolution platform 1, as shown in Figure 3

[0040] The first workstation 7-1 on the mask shielding plate 7 is used for coating the film layer on the inner spherical surface of the hemispherical resonator, and is a hollow circle with a diameter equal to the diameter of the inner spherical surface of the hemispherical resonator.

[0041] The second workstation 7-2 on the mask shielding plate 7 is used for coating the film layer on the lip edge and the support column of the hemispherical resonator, and includes a hollow circular ring and a hollow protruding structure. The inner diameter of the circular ring is equal to the diameter of the inner spherical surface of the hemispherical resonator, the outer diameter of the circular ring is equal to the diameter of the outer spherical surface of the hemispherical resonator, and the center disc of the circular ring is connected and fixed to the outer mask plate through two connecting bridges on the diameter. The inner diameter of the hollow protruding structure is slightly larger than the inner diameter of the support column of the hemispherical resonator, and the internal height is slightly larger than the height of the lip edge of the support column of the hemispherical resonator. The support column of the hemispherical resonator can be lifted into the hollow structure, thereby ensuring that the lip edge of the hemispherical resonator reaches the lower surface of the mask shielding plate.

[0042] The third workstation 7-3 on the mask shielding plate 7 is used for secondary coating of the film layer on the upper part of the support rod of the hemispherical resonator, and is a hollow circle with a diameter slightly larger than the diameter of the support rod of the hemispherical resonator. ​

[0043] The revolution platform 1 can drive the rotation platform 3, further drive the hemispherical resonator to move to the position below each work station, and realize the contact and separation of the hemispherical resonator and the mask shielding plate 7 by controlling the lifting rod.

[0044] Further, the hemispherical resonator variable-thickness metal film layer plating device is integrated in the vacuum chamber, and the different positions and different thicknesses of the metal film layer can be plated under the condition of one-time vacuumization by the direct and continuous conversion of the hemispherical resonator at different work stations.

[0045] The size of the structural member ranges from:

[0046] The hemispherical resonator has an inner spherical surface diameter of 16-30 mm, an outer spherical surface diameter of 17-31 mm, a lip width (outer diameter-inner diameter) of 0.5-1.2 mm, a support column diameter of 4.5-5.5 mm, and a support column height higher than the lip height in the range of 3-5 mm.

[0047] In the multi-station mask shielding plate 7, the first station 7-1 is a hollow circle with a diameter equal to the inner spherical surface diameter of the hemispherical resonator; the second station 7-2 has an inner diameter equal to the inner spherical surface diameter of the hemispherical resonator, an outer diameter equal to the outer spherical surface diameter of the hemispherical resonator, two connecting bridges with a width of 0.5-1 mm for connecting the center disc and the outer mask plate of the circular ring, so as to avoid excessive shielding of the lip during the plating process; the hollow protruding structure has an inner diameter larger than the inner diameter of the support column of the hemispherical resonator by 0.2-0.3 mm, and an internal height larger than the height of the support column of the hemispherical resonator by 0.2-0.3 mm; the third station 7-3 is a hollow circle with a diameter larger than the diameter of the support column of the hemispherical resonator by 0.2-0.3 mm.

[0048] Based on the hemispherical resonator variable-thickness metal film layer plating device, a hemispherical resonator variable-thickness metal film layer plating method is provided, which comprises the following steps:

[0049] (1) Assemble the hemispherical resonator to the hemispherical resonator clamp 4 on the rotation platform 3, and lower the lifting rod 2 to the lowest position, so that the uppermost position (the top end of the support column) of the hemispherical resonator is located below the mask shielding plate 7.

[0050] (2) After the vacuum chamber is evacuated to a predetermined vacuum degree, the vacuum chamber is filled with Ar gas to a predetermined vacuum degree.

[0051] (3) Rotate the revolution platform 1 to control the position of the hemispherical resonator to be below the first station 7-1.

[0052] (4) Control the hemispherical resonator to rise by the lifting rod 2, so that the distance between the lip of the hemispherical resonator and the lower surface of the mask shielding plate is 0.2-0.5 mm.

[0053] (5) The self-rotating platform 3 controls the self-rotation of the hemispherical resonator at this position, and the self-rotation angular velocity is 10 rpm-15 rpm, to ensure the uniformity of the film thickness of each position on the inner spherical surface of the resonator.

[0054] (6) The film plating on the inner spherical surface of the hemispherical resonator is started according to the set film layer plating process parameters, the film layer plating thickness is controlled to be 20 nm-40 nm by controlling the plating time.

[0055] (7) After the plating of this station is completed, the self-rotating platform 3 stops self-rotation, and the lifting rod 2 controls the hemispherical resonator to be lowered to the lowest position.

[0056] (8) The revolving platform 1 rotates to control the position of the hemispherical resonator to be below the second station 7-2.

[0057] (9) The lifting rod 2 controls the hemispherical resonator to be raised to the same horizontal plane as the upper surface of the mask shielding plate 7.

[0058] (10) The self-rotating platform 3 controls the self-rotation of the hemispherical resonator at this position, and the self-rotation angular velocity is 15 rpm-18 rpm, to ensure the uniformity of the film thickness of each position on the lip edge of the resonator.

[0059] (11) The film plating on the lip edge and the supporting column of the hemispherical resonator is started according to the set film layer plating process parameters, the film layer plating thickness is controlled to be 60 nm-80 nm by controlling the plating time.

[0060] (12) After the plating of this station is completed, the self-rotating platform 3 stops self-rotation, and the lifting rod 2 controls the hemispherical resonator to be lowered to the lowest position.

[0061] (13) The revolving platform 1 rotates to control the position of the hemispherical resonator to be below the third station 7-3.

[0062] (14) The lifting rod 2 controls the hemispherical resonator to be raised to a distance of 0.2 mm-0.5 mm from the lower surface of the mask shielding plate 7.

[0063] (15) The self-rotating platform 3 controls the self-rotation of the hemispherical resonator at this position, and the self-rotation angular velocity is 20 rpm-30 rpm, to ensure the uniformity of the film thickness of each position on the upper part of the supporting column of the resonator.

[0064] (16) The film plating on the supporting column of the hemispherical resonator is started according to the set film layer plating process parameters, the film layer plating thickness is controlled to be 150 nm-200 nm by controlling the plating time.

[0065] (17) After the plating of this station is completed, the self-rotating platform 3 stops self-rotation, and the lifting rod 2 controls the hemispherical resonator to be lowered to the lowest position.

[0066] (18) The vacuum chamber stops vacuumizing, and after the vacuum degree returns to the atmospheric pressure, the hemispherical resonator is taken out from the clamp, and the film layer plating is completed.

[0067] Finally, it should be noted that the above examples are only used to illustrate the technical solutions of the present application, and are not limited thereto; although the present application has been described in detail with reference to the foregoing examples, those skilled in the art should understand that the technical solutions recorded in the foregoing examples can still be modified, or some technical features therein can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A device for coating a metal film with variable thickness using a hemispherical resonator, characterized in that: The device comprises a revolution platform (1), a lifting rod (2), a rotation platform (3), a hemispherical resonator fixture (4) and a mask shielding plate (7). The rotating platform (3) is installed on the revolution platform (1), and the revolution platform (1) drives the rotating platform (3) to move and position; The lifting rod (2) is installed on a rotating platform (3), and the rotating platform (3) drives the lifting rod (2) to rotate; The upper end of the lifting rod (2) is connected to the hemispherical resonator fixture (4), and the lifting rod (2) drives the hemispherical resonator fixture (4) to move up and down; The hemispherical resonator clamp (4) is used to support and fix the lower support rod of the hemispherical resonator; The mask shielding plate (7) is located above the hemispherical resonator fixture (4), and there are three workstations on the mask shielding plate (7); the first workstation (7-1) on the mask shielding plate (7) is used for film plating on the inner sphere of the hemispherical resonator, and is a hollow circular shape with a diameter equal to the inner sphere diameter of the hemispherical resonator; the second workstation (7-2) on the mask shielding plate (7) is used for film plating at the lip edge of the hemispherical resonator, and includes a hollow circular ring and a hollow convex structure, the inner diameter of the circular ring is the inner sphere diameter of the hemispherical resonator, the outer diameter of the circular ring is the outer sphere diameter of the hemispherical resonator, and the center of the circular ring is the outer sphere diameter of the hemispherical resonator. The disk and the annular outer mask shielding plate (7) are connected and fixed by two connecting bridges. The inner diameter of the hollow convex structure is slightly larger than the inner diameter of the hemispherical resonator support column, and the inner height is slightly larger than the height of the hemispherical resonator support column above the lip edge. The hemispherical resonator support column can be lifted into the hollow convex structure, thereby ensuring that the half-period resonator lip edge reaches the lower surface of the mask shielding plate. The third station (7-3) on the mask shielding plate (7) is used for secondary plating of a partial film layer on the hemispherical resonator support rod. The third station is a hollow circular shape with a diameter slightly larger than the diameter of the hemispherical resonator support rod, and comprises the following steps: (1) Assembling a hemispherical resonator onto a hemispherical resonator fixture (4) on a rotating platform (3), and integrating the hemispherical resonator variable thickness metal film coating device into a vacuum chamber with a predetermined vacuum degree; (2) The revolution platform (1) controls the position of the hemispherical resonator to below the first station (7-1), and the lifting rod (2) controls the hemispherical resonator to rise until the distance between the lip of the hemispherical resonator and the lower surface of the mask shield is 0.2mm~0.5mm; (3) The rotating platform (3) controls the hemispherical resonator to rotate, and starts coating the inner sphere of the hemispherical resonator according to the set film coating process parameters; (4) After the plating of the first station (7-1) is completed, the revolution platform (1) controls the position of the hemispherical resonator to the bottom of the second station (7-2), and the lifting rod (2) controls the hemispherical resonator to rise until the lip of the hemispherical resonator and the upper surface of the mask shielding plate (7) are on the same horizontal plane; (5) The rotating platform (3) controls the hemispherical resonator to rotate, and starts coating the lip edge and support column of the hemispherical resonator according to the set film coating process parameters; (6) After the plating of the second station (7-2) is completed, the revolution platform (1) controls the position of the hemispherical resonator to the bottom of the third station (7-3), and the lifting rod (2) controls the hemispherical resonator to rise until the distance between the lip of the hemispherical resonator and the lower surface of the mask shielding plate (7) is 0.2mm~0.5mm; (7) The rotation platform (3) controls the hemispherical resonator to rotate, and starts coating the hemispherical resonator support column according to the set film coating process parameters to complete the film coating.

2. The device for coating a hemispherical resonator with a variable thickness metal film according to claim 1, characterized in that: The mask shielding plate (7) is circular, and its central axis coincides with the central axis of the revolution platform (1). The centers of the three workstations are at the same distance from the axis of the mask shielding plate (7), and are also at the same distance from the axis of the rotation platform (3) to the axis of the revolution platform (1). The rotation platform (3) can drive the rotation platform (3) to perform circular rotation around the axis.

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