Substrate processing apparatus

Abstract

This invention relates to a substrate processing apparatus capable of performing deposition, etching, heat treatment, and other substrate processing on multiple substrates. The invention discloses a substrate processing apparatus comprising: a reaction tube (100) forming a processing space (S1) that accommodates multiple substrates (1) and performs substrate processing; a nozzle setting portion (200) protruding outward from a portion of the side of the reaction tube (100) to form an outer portion of the reaction tube (100); and a plurality of gas nozzles (300) arranged vertically around the substrates (1) in the nozzle setting portion (200) to inject process gases into the reaction tube (100); wherein the nozzle setting portion (200) has a plurality of insertion portions corresponding to the gas nozzles (300) for inserting and setting the gas nozzles (300) respectively.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus capable of performing deposition, etching, heat treatment, and other substrate processing on multiple substrates. Background Technology

[0002] To manufacture semiconductor devices, a process is required to deposit the required thin film on a substrate such as a silicon wafer. The main methods used in thin film deposition processes include sputtering, chemical vapor deposition (CVD), and atomic layer deposition (ALD).

[0003] Sputtering, a technique that uses argon ions generated in a plasma state to collide with the target surface and deposit the target material detached from the target surface onto a substrate to form a thin film, has the advantage of forming high-purity thin films with excellent adhesion, but it has limitations in forming fine patterns with high aspect ratios.

[0004] Chemical vapor deposition is a technique in which various gases are injected into a reaction chamber, and the gases induced by high energy through heat, light or plasma react chemically with the reactive gases, thereby depositing a thin film on a substrate.

[0005] Chemical vapor deposition (CVD) utilizes rapidly occurring chemical reactions, which makes it very difficult to control thermodynamic stability and reduces the physical, chemical, and electrical properties of the thin film.

[0006] Atomic layer deposition (ALD) is a technique that uses alternating supply of source gas and purge gas to deposit thin films of atomic layer units on a substrate. In order to overcome the limitations of step coverage, it utilizes surface reactions and therefore has the advantages of being suitable for forming fine patterns with high aspect ratios and having excellent electrical and physical properties of the thin films.

[0007] The apparatus for performing atomic layer deposition includes: a single-piece apparatus that loads substrates one by one into a chamber for processing, and a batch apparatus that loads multiple substrates into a chamber for unified processing.

[0008] At this time, a typical batch substrate processing device has a nozzle protruding outward inside the reaction tube, and multiple gas nozzles are set at the nozzle setting position to spray process gas, thereby performing substrate processing.

[0009] In this situation, the nozzle locations where multiple gas nozzles are installed form dead volumes, leaving behind various process gases, especially source gases and reaction gases. Therefore, there is a problem that various byproducts are generated inside the reaction tube, which become factors in particle formation.

[0010] In addition, the following problems exist: because various process gases remain in the dead volume at the nozzle setting position, the flow rate of the injected process gas is insufficient. Due to the difference in flow rate depending on the position of the process gas injected into the processing space side, the substrate processing cannot be performed smoothly, and the uniformity is reduced. Summary of the Invention

[0011] The problem to be solved

[0012] The purpose of this invention is to provide a substrate processing apparatus that prevents and minimizes residual gas near the nozzle in order to solve the problems described above.

[0013] Problem-solving methods

[0014] The present invention is proposed to achieve the objectives of the present invention as described above. The present invention discloses a substrate processing apparatus, comprising: a reaction tube 100 forming a processing space S1, the processing space S1 accommodating a plurality of substrates 1 and performing substrate processing; a nozzle setting portion 200 protruding outward from a portion of the side of the reaction tube 100 to form an outer portion of the reaction tube 100; a plurality of gas nozzles 300 arranged vertically around the substrates 1 in the nozzle setting portion 200 to inject process gas into the reaction tube 100; wherein the nozzle setting portion 200 has a plurality of insertion portions corresponding to the gas nozzles 300 for inserting and setting the gas nozzles 300 respectively.

[0015] The insertion part may be a plurality of insertion slots 210, which are formed on the inner wall of the processing space S1 side with a shape corresponding to the outside of the gas nozzle 300, so as to insert and install the gas nozzle 300.

[0016] The insertion portion may be a through-hole 220, which is formed vertically to accommodate the gas nozzles 300.

[0017] The nozzle setting part 200 may include an injection port, which is configured to communicate the processing space S1 with the through port 220.

[0018] The injection port may be a plurality of injection holes 290, which are formed at positions corresponding to the gas injection holes 301 formed in the gas nozzle 300.

[0019] The injection port may be an injection slit 280, which is formed at a position corresponding to the gas injection hole 301 and has a width smaller than the diameter of the gas nozzle 300. Multiple gas injection holes 301 are formed in the gas nozzle 300 in a vertical direction.

[0020] The through-hole 220 can be formed in a shape corresponding to the outside of the gas nozzle 300.

[0021] The gas nozzles 300 can be inserted at intervals into the inner wall surfaces of the corresponding insertion portions.

[0022] The inner surface of the nozzle setting part 200 and the inner surface of the reaction tube 100 can extend to form the same curvature.

[0023] The first distance D1 can be the same as the second distance D2. The first distance D1 is the shortest horizontal distance between the inner surface of the nozzle setting part 200 and the center C of the reaction tube 100. The second distance D2 is the shortest horizontal distance between the position on the inner surface of the reaction tube 100 other than the nozzle setting part 200 and the center C.

[0024] The nozzle setting portion 200 may include: a pair of protruding surfaces 230, which are arranged to protrude outward from the side of the reaction tube 100; and an outer surface portion 240, which is formed between the protruding surfaces 230.

[0025] The nozzle setting part 200 may include a setting member 270, which is disposed in the area surrounded by the pair of protruding surfaces 230 and the outer surface 240, and forms a plurality of the insertion parts on the inner surface of the processing space S1 side.

[0026] The nozzle setting portion 200 has a pair of protruding surfaces 230 and an outer surface portion 240 formed on its outer surface, and the inner surface of the processing space S1 can be integrally formed with a plurality of the insertion portions.

[0027] The outer surface 240 may have the same curvature as the outer surface of the reaction tube 100.

[0028] The reaction tube 100 may include an exhaust port 120, which is formed at a position opposite to the nozzle setting portion 200.

[0029] The reaction tube (100) is arranged symmetrically with respect to a virtual horizontal line connecting the center of the exhaust port 120 and the center of the nozzle setting part 200 on a plane.

[0030] The gas nozzle 300 allows multiple gas injection holes 301 formed in a vertical direction to inject the process gas in parallel with each other.

[0031] The substrate processing apparatus may further include an outer tube 400, which accommodates the reaction tube 100 to form an exhaust space S2 between itself and the internal reaction tube 100.

[0032] The side surface of the outer tube 400, the inner surface of the nozzle setting part 200, and the side surface of the reaction tube 100 can form the same curvature.

[0033] The effects of the invention

[0034] The substrate processing apparatus of the present invention minimizes the dead volume around the gas nozzle, thereby having the advantage of preventing and minimizing gas residue near the gas nozzle.

[0035] Furthermore, the substrate processing apparatus of the present invention minimizes the dead volume around the gas nozzle, thereby having the advantage of smoothly performing purging on residual gas located near the gas nozzle.

[0036] Furthermore, the substrate processing apparatus of the present invention minimizes residual gas in the reaction tube, thereby having advantages such as improved substrate processing uniformity and quality of step coverage. Attached Figure Description

[0037] Figure 1 This is a cross-sectional view showing the substrate processing apparatus of the present invention.

[0038] Figure 2 It is shown Figure 1 A perspective view of the substrate processing apparatus.

[0039] Figure 3 It is shown Figure 1 A cross-sectional view of the substrate processing apparatus.

[0040] Figure 4 It is shown Figure 1 An enlarged cross-sectional view of the nozzle setting section in the substrate processing apparatus.

[0041] Figure 5 This is an enlarged cross-sectional view showing another embodiment of the nozzle setting section in the substrate processing apparatus of the present invention.

[0042] Figure 6 It is shown Figure 5 A diagram of the spray holes in the substrate processing apparatus.

[0043] Figure 7 This is a diagram illustrating the jet slit in the substrate processing apparatus of the present invention.

[0044] Figure 8 This is an enlarged cross-sectional view showing another embodiment of the nozzle setting section in the substrate processing apparatus of the present invention.

[0045] Figures 9a to 9c As shown Figure 1 A graph showing the effect of the substrate processing device. Figure 9a This is a graph showing the residual gas concentration over time at a location adjacent to the gas nozzle in the substrate. Figure 9b This is a graph showing the residual gas concentration in the substrate near the exhaust port as a function of time. Figure 9c It is a graph showing the concentration of residual gas in the exhaust pipe over time.

[0046] (Explanation of reference numerals in the attached diagram)

[0047] 100: Reaction tube; 200: Nozzle setting section

[0048] 300: Gas Nozzle Detailed Implementation

[0049] The substrate processing apparatus of the present invention will be described in detail below with reference to the accompanying drawings.

[0050] like Figure 1 and Figure 2 As shown, the substrate processing apparatus of the present invention includes: a reaction tube 100 forming a processing space S1, the processing space S1 accommodating a plurality of substrates 1 and performing substrate processing; a nozzle setting portion 200 protruding outward from a portion of the side of the reaction tube 100 to form a portion outside the reaction tube 100; and a plurality of gas nozzles 300 arranged vertically around the substrates 1 in the nozzle setting portion 200 to inject process gas into the reaction tube 100.

[0051] In addition, the substrate processing apparatus of the present invention may also include an outer tube 400, which houses the reaction tube 100 and forms an exhaust space S2 between the outer tube 400 and the inner reaction tube 100.

[0052] In addition, the substrate processing apparatus of the present invention may also include a substrate loading section 10, which is accommodated in the processing space S1 to stack a plurality of substrates 1 and perform substrate processing on the plurality of substrates 1.

[0053] In addition, the substrate processing apparatus of the present invention may also include a manifold 30, which is connected to the lower side of the reaction tube 100 and has an injector connected to a gas nozzle 300 described later to supply process gas to the gas nozzle 300.

[0054] Here, the substrate 1 that is the object of processing may include a substrate used in display devices such as semiconductor substrates, LEDs, and LCDs, a solar cell substrate, a glass substrate, etc., or any object substrate disclosed previously may be used.

[0055] In addition, substrate processing refers to deposition processes, more preferably to deposition processes using atomic layer deposition, but is not limited to this, and may also include deposition processes using chemical vapor deposition, heat treatment processes, etc.

[0056] On the other hand, the process gas, which is supplied and injected for performing substrate processing in the processing space S1, may include purge gas, source gas and reaction gas injected through a plurality of gas nozzles 300 described later.

[0057] The substrate loading section 10 is a structure that stacks multiple substrates 1 and can have various structures.

[0058] For example, the substrate loading section 10 may include: a plurality of support frames arranged in a vertical direction; and a placement section for placing a plurality of substrates 1 in a stacked manner on the support frames.

[0059] On the other hand, for the substrate loading section 10, any structure can be applied as long as it is a conventionally disclosed batch type, that is, a structure used in a vertical substrate processing apparatus.

[0060] The manifold 30 is configured on the lower side of the reaction tube 100 and has an injector connected to the externally configured process gas supply unit 50. The gas nozzle 300, described later, is fixed to the injector, thereby guiding the process gas supply to the gas nozzle 300.

[0061] That is, multiple manifolds 30 can be configured to allow ejectors corresponding to multiple gas nozzles 300 to pass through, and the lower end of the gas nozzle 300 is connected to each ejector, thereby allowing process gas to be supplied to the gas nozzle 300.

[0062] The reaction tube 100 can have various structures, as it forms a processing space S1 that accommodates multiple substrates 1 and performs substrate processing, and has an opening 101 formed on a part of its sidewall.

[0063] For example, the reaction tube 100 may include: a main body 110, with an opening 101 formed on one side of the sidewall; and an exhaust port 120 formed on the other side of the sidewall of the main body 110.

[0064] At this time, the reaction tube 100 can be made of quartz material and formed into an arch at the top, or, as another example, can be formed into a plane.

[0065] The exhaust port 120 serves as a structure for venting the processing space S1. It can vent the process gas supplied through the gas nozzle 300 (described later) and the exhaust gas containing various byproducts generated therefrom. In this case, venting can refer to venting from the processing space S1 to the exhaust space S2 formed through the outer pipe 400 (described later).

[0066] That is, the exhaust port 120 can perform exhaust from the processing space S1 to the exhaust space S2.

[0067] On the other hand, the exhaust port 120 may be formed at a position adjacent to the main exhaust port 411, which is a position on the side of the reaction tube 100 that corresponds to the main exhaust port 411 on a plane.

[0068] More specifically, such as Figure 3 As shown, the exhaust port 120 can be formed on the side of the reaction tube 100 at a position facing the gas nozzle 300 described later and at a position adjacent to the main exhaust port 411.

[0069] For example, the vent 120 may be formed in a vertical slit shape on the sidewall of the reaction tube 100, or more specifically, it may be formed in a vertical direction with a length corresponding to the height of the highest and lowest height of the substrate 1 mounted vertically in the sidewall of the reaction tube 100.

[0070] On the other hand, the process gas discharged into the exhaust space S2 through the exhaust port 120 can be discharged to the outside through the main exhaust port 411, which will be described later. At this time, the main exhaust port 411 is formed on the lower side of the side wall of the outer pipe 400, thereby forming a downward flow of the process gas discharged through the exhaust port 120.

[0071] In order to improve the downward airflow as described above, the hourly exhaust volume on the upper side of the reaction tube 100 can be guided to be greater than the hourly exhaust volume on the lower side.

[0072] Therefore, when the sidewall of the reaction tube 100 is formed as a vertical slit, the exhaust port 120 can be formed to gradually or progressively increase in width upwards.

[0073] Alternatively, as another example, the exhaust port 120 may be a plurality of exhaust holes formed at intervals in a vertical direction on the sidewall of the reaction tube 100, in which case the area of ​​the exhaust holes may gradually or progressively increase upward.

[0074] On the other hand, the reaction tube 100 may include an opening 101, a portion of which has an open sidewall for configuring the nozzle setting portion 200 described later, and the nozzle setting portion 200 is combined with the opening 101 so that the nozzle setting portion 200 covers the opening 101, thereby forming an outer surface.

[0075] At this time, the open portion 101 can be formed in a position facing the exhaust port 120. More specifically, the interior of the reaction tube 100 can be arranged in a line symmetrical manner with respect to a virtual horizontal line connecting the center of the exhaust port 120 and the center of the open portion 101 on a plane.

[0076] That is, the opening 101 and the exhaust port 120 can be formed in a position facing each other, thereby forming a line symmetry with respect to the virtual horizontal line connecting the center of the nozzle setting part 200 and the center of the opening 101.

[0077] At this time, in addition to the nozzle setting part 200, the opening part 101 and the exhaust port 120, the linearly symmetrical objects also include the main body part 110 and the set gas nozzle 300 and the insertion part.

[0078] The nozzle setting portion 200 can have various structures as it is configured to protrude outward from the opening portion 101 to form a portion outside the reaction tube 100.

[0079] In particular, the nozzle setting part 200 forms a plurality of insertion parts corresponding to the gas nozzle 300, so as to insert and set the gas nozzle 300 respectively.

[0080] That is, the nozzle setting part 200 is configured to guide the gas nozzle 300 to be inserted into the insertion part in a state where a portion of the side of the reaction tube 100 protrudes outward, thereby minimizing the dead volume generated for setting the gas nozzle 300.

[0081] Therefore, the nozzle setting part 200, which occupies a volume having an insertion part for inserting and setting gas nozzles 300 respectively, can be composed of a main body 201 that has no blank space inside except for the insertion part described later.

[0082] At this time, the nozzle setting part 200 can be an integral structure with the reaction tube 100. As another example, the nozzle setting part 200 can be provided at both ends of the open part 101 by welding or other means.

[0083] On the other hand, the nozzle setting part 200 can be made of the same material as the reaction tube 100 described above, with an insertion part formed inside and protruding outward from the reaction tube 100 to ensure space for setting the gas nozzle 300.

[0084] At this time, the inner surface of the nozzle setting part 200 and the inner surface of the reaction tube 100 can extend to form the same curvature.

[0085] That is, the inner surface of the nozzle setting part 200 can extend from the opening part 101 and the inner surface of the reaction tube 100 to form the same curvature. As another example, it can form the same curvature as the inner surface of the reaction tube 100, but not extend from the inner surface of the reaction tube 100, and can be discontinuous.

[0086] At this time, the shortest horizontal distance between the inner surface of the nozzle setting part 200 (excluding the position where the insertion part is formed) and the center C of the reaction tube 100, i.e., the first distance D1, can be the same as the shortest horizontal distance from the center C to the inner surface of the reaction tube 100, i.e., the second distance D2.

[0087] In this case, the second distance D2 can refer to the shortest horizontal distance from the location on the inner surface of the reaction tube 100, excluding the area forming the nozzle setting portion 200, to the center C.

[0088] That is, the inner surface of the nozzle setting part 200 extends with the inner surface of the reaction tube 100, and the inner surface of the nozzle setting part 200 and the inner surface of the reaction tube 100 can be formed into a circle on the plane.

[0089] On the other hand, the nozzle setting part 200 may form a pair of protruding surfaces 230, which are formed by protruding outward from both ends of the opening part 101. The outer part 240 formed between the protruding surfaces 230 may constitute the outer part of the reaction tube 100.

[0090] At this time, a pair of protruding surfaces 230 can be formed by protruding outward in the open portion 101 of the reaction tube 100, i.e., at a predetermined position, and can be combined with the open portion 101 by welding or the like.

[0091] The pair of protruding surfaces 230 may protrude in the radial direction of the reaction tube 100, that is, in the direction from the center C to the position on the circumference. As another example, Figure 3 As shown, it can protrude in a direction parallel to the injection direction of the gas nozzle 300 described later.

[0092] Furthermore, the outer portion 240 forms the same curvature as the outer portion of the reaction tube 100, and even further, forms the same curvature as the outer tube 400 described later, thereby maintaining the same horizontal distance from the outer tube 400 at any position.

[0093] In this case, for example, Figure 8 As shown, the nozzle setting part 200 may include a setting member 270, which is disposed in a region surrounded by a pair of protruding surfaces 230 and an outer surface 240, and forms a plurality of insertion portions on the inner surface of the processing space S1 side.

[0094] That is, the nozzle setting part 200 forms a pair of protruding surfaces 230 extending from the reaction tube 100 and protruding outward, and an outer part 240 forming the outside between the pair of protruding surfaces 230, thereby forming a blank space surrounded by the pair of protruding surfaces 230 and the outer part 240.

[0095] The setting component 270 may be configured to combine the pair of protruding surfaces 230 and the outer surface 240 in a blank space surrounded by the pair of protruding surfaces 230 and the outer surface 240, and to form a plurality of insertion portions on the processing space S1 side to eliminate dead volume.

[0096] In addition, the setting component 270 is configured with a relatively simple combination structure that can be easily changed to form a corresponding insertion part when the number, size and position of the gas nozzles 300 are changed, so that even if the gas nozzles 300 undergo various specifications changes, the dead volume can be minimized and eliminated.

[0097] Additionally, as another example, such as Figure 4 As shown, the nozzle setting part 200 may have a structure in which a pair of protruding surfaces 230 and an outer surface 240 are formed on the outside, and the inner surface of the processing space S1 side is integrated with a plurality of insertion parts.

[0098] For example, such as Figure 3 and Figure 4 As shown, the insertion part can be a plurality of insertion slots 210, which are formed on the inner wall surface of the processing space S1 side in a shape corresponding to the outside of the gas nozzle 300, so as to insert and install the gas nozzle 300.

[0099] The insertion slots 210 are formed on the inner wall of the processing space S1 side of the main body 201, respectively corresponding to a plurality of gas nozzles 300, and the insertion slots 210 can be spaced apart from each other in a vertical direction.

[0100] At this time, the insertion groove 210 can be formed in a shape corresponding to the outside of the gas nozzle 300. More specifically, corresponding to the gas nozzle 300 which is formed in a vertical direction with a cylindrical shape, the insertion groove 210 can be a groove shape that extends vertically and is formed in a circular shape.

[0101] On the other hand, the insertion groove 210 may be formed corresponding to the outside of the gas nozzle 300. In the case that the gas nozzle 300 is a polygonal shape with sharp edges, the insertion groove 210 may be formed into a corresponding groove shape.

[0102] Additionally, the insertion slot 210 may be formed to a size corresponding to a shape that does not cause the gas nozzle 300 to protrude outwards, and may be formed to be larger than the diameter of the gas nozzle 300 so that the gas nozzle 300 can be inserted into the processing space S1 side.

[0103] Furthermore, when the insertion groove 210 is in contact with the gas nozzle 300, various vibrations are generated due to the characteristics of the gas nozzle 300, which has a vertical length and is only engaged on the lower side. Collisions with the insertion groove 210 may cause damage. Therefore, a predetermined distance can be spaced between the insertion groove 210 and the gas nozzle 300 to prevent contact, and the insertion groove 210 may have a corresponding size.

[0104] On the other hand, as another example, such as Figure 5 As shown, the insertion part can be a through-hole 220 formed in a vertical direction to provide gas nozzles 300 respectively.

[0105] That is, the insertion part, as a through-hole 220 that penetrates the main body 201 in a vertical direction, can be formed as a through-hole 220 into which the gas nozzle 300 is inserted from the upper or lower side in a vertical direction into the main body 201.

[0106] In this case, the through-hole 220 can be formed in a shape corresponding to the outside of the gas nozzle 300. While injecting process gas through the injection port with a diameter smaller than that of the gas nozzle 300, process gas can be prevented from seeping into the processing space S1, thereby minimizing the residual gas generated inside the through-hole 220.

[0107] At this time, in order to inject process gas through the gas nozzle 300 provided in the through port 220, the nozzle setting part 200 may include an injection port that connects the processing space S1 with the through port 220.

[0108] For example, such as Figure 5 and Figure 6 As shown, the injection port can be a plurality of injection holes 290 formed at positions corresponding to the gas injection holes 301 formed on the gas nozzle 300.

[0109] Additionally, as another example, such as Figure 7 As shown, the injection port can be an injection slit 280, which is formed vertically at a position corresponding to a plurality of gas injection holes 301 formed vertically in the gas nozzle 300 and has a width smaller than the diameter of the gas nozzle 300.

[0110] That is, the injection port, as a structure connecting the through port 220 and the processing space S1 to allow the process gas injected through the gas injection hole 301 to be properly injected into the processing space S1, can form an injection hole 290 and an injection slit 280.

[0111] The gas nozzle 300 can have various structures, as it is arranged in a vertical direction around the substrate 1 in the nozzle setting section 200 to inject process gas into the reaction tube 100.

[0112] At this time, the gas nozzle 300 is inserted into the insertion part of the nozzle setting part 200, and can be arranged adjacent to the inner surface of the nozzle setting part 200. Thus, the process gas injected from the gas nozzle 300 can be injected into the exhaust port 120 formed in the opposite position to form a straight airflow.

[0113] On the other hand, multiple gas nozzles 300 can be configured to respectively spray the source gas, reaction gas and inert gas, which are the process gases mentioned above, and the multiple gas nozzles 300 can each spray a predetermined gas.

[0114] In this case, a gas nozzle 300 for injecting source gas and reaction gas is arranged on the center side of the gas nozzle 300, and a gas nozzle 300 for injecting inert gas is arranged on the outer periphery of the center side. In this way, the straightness of the injection of source gas and reaction gas can be enhanced by the guiding effect of inert gas.

[0115] In addition, such as Figure 3 As shown, multiple gas nozzles 300 spray source gas, reaction gas and purge gas in the same direction, which can guide the formation of parallel airflows, thereby enabling the process gas in the processing space S1 to flow in the same direction.

[0116] More specifically, the plurality of gas nozzles 300 are formed in a vertical direction with a plurality of gas injection holes 301 formed in the same direction for each gas nozzle 300, and the plurality of gas nozzles 300 are arranged parallel to each other with the gas injection holes 301, thereby guiding the process gas to flow parallel to each other on the substrate 1 in the same direction, that is, from the nozzle setting part 200 to the exhaust port 120 side.

[0117] On the other hand, the gas nozzle 300 simply has a length in the vertical direction and a structure in which multiple gas injection holes 301 are formed on the outer peripheral surface.

[0118] In addition, as another example, the gas nozzle 300 is generally formed in an inverted "U" shape and may include: a first nozzle, one end of which is connected to an injector supplying process gas at the lower part of the reaction tube 100 and forms a plurality of gas injection holes 301 in a vertical direction; a second nozzle, which is arranged parallel to the first nozzle and forms a plurality of gas injection holes 301 in a vertical direction; and a connecting part, which connects the other end of the first nozzle to the second nozzle.

[0119] At this time, the second nozzle can be arranged parallel to the first nozzle at a position adjacent to the first nozzle, and can form a height corresponding to the loading range of the substrate 1 loaded in the substrate loading section 10.

[0120] On the other hand, a plurality of gas injection holes 301 are formed at intervals in a vertical direction. The plurality of gas injection holes 301 can be arranged at predetermined intervals or formed corresponding to the loading position of the substrate 1.

[0121] It also includes an outer tube 400, which accommodates the reaction tube 100 and forms an exhaust space S2 between itself and the inner reaction tube 100.

[0122] The outer tube 400 serves as a housing for the reaction tube 100 and forms an exhaust space S2 between itself and the inner reaction tube 100. It also has a structure that allows the exhaust gas transmitted from the processing space S1 through the exhaust port 120 to be discharged to the outside. It can have various structures.

[0123] The outer tube 400 may be made of quartz material and formed in an arch shape at the top, or, as another example, may be formed in a plane, and may be formed in a circular structure on the plane.

[0124] On the other hand, the outer tube 400 may be a structure introduced to accommodate a dual-tube structure, in order to improve the problem that the process gas cannot be kept in a horizontal direction due to the formation of the main exhaust port 411 on the lower side, and that the substrate processing cannot be performed smoothly because the airflow is formed to the lower side where the main exhaust port 411 is formed.

[0125] Thus, the outer tube 400 can accommodate the reaction tube 100 and form an exhaust space S2 between it and the reaction tube 100.

[0126] At this time, the main exhaust port 411 formed on the lower side of the outer pipe body 410 serves as a structure for discharging exhaust gas transmitted to the exhaust space S2 through the exhaust port 120 to the outside, and can have various structures.

[0127] For example, the main exhaust port 411 is formed on the lower side of the outer pipe body 410, and exhaust can be performed by a pump 40 configured externally.

[0128] At this time, the main exhaust port 411 can be configured at an appropriate position on the side of the outer tube body 410, but considering the heating part 20 configured outside the outer tube body 410, the main exhaust port 411 can be formed on the lower side of the side.

[0129] In this case, the main exhaust port 411 can be formed through the outer pipe 400, and the exhaust pipe portion 420 described later can be formed in a circular shape.

[0130] The outer pipe 400 may further include an exhaust pipe section 420, which is located at a position corresponding to the main exhaust port 411.

[0131] The exhaust pipe section 420 may be a structure provided in the outer pipe 400 to discharge exhaust gas through the main exhaust port 411 to the outside, and for this purpose it may be connected to the pump 40 disposed externally.

[0132] For example, the exhaust pipe portion 420 may include: a connecting portion 421 that surrounds the lower outer peripheral surface of the outer pipe 400; and an exhaust pipe 422 that is formed in the connecting portion 421 at a position corresponding to the main exhaust port 411.

[0133] On the other hand, in this case, the side surface of the outer tube 400, the inner surface of the nozzle setting part 200, and the side surface of the reaction tube 100 are circular in the plane and can form the same curvature; as another example, they can be formed such that the horizontal distance from any position can maintain the same shape.

[0134] The following is for reference Figures 9a to 9c This explains the effect of the substrate processing apparatus of the present invention.

[0135] The substrate processing apparatus of the present invention minimizes additional space at the location where the gas nozzle 300 is set, thereby reducing residual gas and improving substrate processing quality.

[0136] In particular, Figure 9a , Figure 9b and Figure 9c These are graphs showing the residual gas concentration of the source gas during the substrate processing using ALD, as an embodiment of the present invention, at the positions closest to the gas nozzle 300, the positions closest to the exhaust port 120, and the exhaust port 411 on the substrate 1.

[0137] In the various graphs, G1 is a graph showing the residual gas concentration of the source gas in a conventional substrate processing apparatus; G2 is a graph showing the residual gas concentration of the source gas in the substrate processing apparatus of the present invention.

[0138] At this point, the X-axis of each curve represents time, the Y-axis represents the amount of residual gas, P1 represents the source gas injection time, P2 represents the purge gas injection time, P3 represents the reaction gas injection time, and P4 represents the purge gas injection time.

[0139] As shown in the accompanying figures, it can be confirmed that the residual gas of the source gas at each location considered as the main location is reduced more than that of conventional substrate processing apparatuses. This has the advantages of significantly reducing the amount of residual gas, preventing residual gas from acting as various by-products that reduce the substrate processing quality, and ensuring uniform spraying to guide uniform substrate processing.

[0140] The above is only a part of the description of preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be limited to the above embodiments. The technical ideas and fundamental technical ideas of the present invention described above are all included within the scope of the present invention.

Claims

1. A substrate processing apparatus, characterized in that, include: A reaction tube (100) forms a processing space (S1) that accommodates a plurality of substrates (1) and performs substrate processing. The nozzle setting part (200) is arranged to protrude outward on a portion of the side of the reaction tube (100) to form a portion of the outer side of the reaction tube (100); Multiple gas nozzles (300) are arranged in a vertical direction around the substrate (1) in the nozzle setting section (200) to inject process gas into the reaction tube (100); The nozzle setting part (200) has a plurality of insertion parts, which correspond to the shape of the gas nozzle (300) and are respectively inserted into the gas nozzle (300). The nozzle mounting portion (200) is configured to protrude outward from the reaction tube (100) and does not create any empty space other than the insertion portion. The nozzle setting portion (200) has the insertion portion formed on its inner surface, and the inner surface of the nozzle setting portion (200) extends with the same surface as the inner surface of the reaction tube (100). The gas nozzle (300) is inserted into the insertion part in a manner that does not protrude outward, and injects process gas into the processing space (S1) at a position adjacent to the inner surface of the nozzle setting part (200) to minimize the dead volume of the processing space (S1).

2. The substrate processing apparatus according to claim 1, characterized in that, The insertion part comprises a plurality of insertion slots (210), which are formed on the inner wall of the processing space (S1) with a shape corresponding to the outside of the gas nozzle (300) to insert and install the gas nozzle (300).

3. The substrate processing apparatus according to claim 1, characterized in that, The insertion part is a through-hole (220), which is formed vertically to provide gas nozzles (300) respectively.

4. The substrate processing apparatus according to claim 3, characterized in that, The nozzle setting part (200) includes an injection port, which is configured to communicate the processing space (S1) with the through port (220).

5. The substrate processing apparatus according to claim 4, characterized in that, The injection port is a plurality of injection holes (290), which are formed at positions corresponding to the gas injection holes (301) formed in the gas nozzle (300).

6. The substrate processing apparatus according to claim 4, characterized in that, The injection port is a injection slit (280), which is formed at a position corresponding to the gas injection hole (301) and has a width smaller than the diameter of the gas nozzle (300). Multiple gas injection holes (301) are formed in the gas nozzle (300) in a vertical direction.

7. The substrate processing apparatus according to claim 3, characterized in that, The through-hole (220) is formed in a shape corresponding to the outside of the gas nozzle (300).

8. The substrate processing apparatus according to claim 1, characterized in that, The gas nozzles (300) are inserted at intervals on the inner wall surfaces of the corresponding insertion portions.

9. The substrate processing apparatus according to claim 1, characterized in that, The inner surface of the nozzle setting part (200) extends with the inner surface of the reaction tube (100) to form the same curvature.

10. The substrate processing apparatus according to claim 1, characterized in that, The first distance (D1) and the second distance (D2) are the same. The first distance (D1) is the shortest horizontal distance between the inner surface of the nozzle setting part (200) and the center (C) of the reaction tube (100). The second distance (D2) is the shortest horizontal distance between the position on the inner surface of the reaction tube (100) other than the nozzle setting part (200) and the center (C).

11. The substrate processing apparatus according to claim 1, characterized in that, The nozzle setting part (200) includes: A pair of protruding surfaces (230) are arranged to protrude outward from the side of the reaction tube (100); an outer surface (240) is formed between the protruding surfaces (230).

12. The substrate processing apparatus according to claim 11, characterized in that, The nozzle setting part (200) includes a setting component (270). The setting component (270) is disposed in the area surrounded by the pair of protruding surfaces (230) and the outer surface (240), and a plurality of the insertion portions are formed on the inner surface of the processing space (S1).

13. The substrate processing apparatus according to claim 11, characterized in that, The nozzle setting portion (200) has a pair of protruding surfaces (230) and an outer surface portion (240) formed on its outer side, and the inner surface of the processing space (S1) is integrally formed with the plurality of insertion portions.

14. The substrate processing apparatus according to claim 11, characterized in that, The outer surface (240) has the same curvature as the outer surface of the reaction tube (100).

15. The substrate processing apparatus according to claim 1, characterized in that, The reaction tube (100) includes an exhaust port (120) formed at a position opposite to the nozzle setting portion (200).

16. The substrate processing apparatus according to claim 15, characterized in that, The reaction tube (100) is arranged symmetrically with respect to a virtual horizontal line connecting the center of the exhaust port (120) and the center of the nozzle setting part (200) on a plane.

17. The substrate processing apparatus according to claim 1, characterized in that, The gas nozzle (300) causes a plurality of gas injection holes (301) formed in a vertical direction to inject the process gas in parallel with each other.

18. The substrate processing apparatus according to claim 1, characterized in that, Also includes: An outer tube (400) accommodates the reaction tube (100) to form an exhaust space (S2) between itself and the inner reaction tube (100).

19. The substrate processing apparatus according to claim 18, characterized in that, The side surface of the outer tube (400), the inner surface of the nozzle setting part (200), and the side surface of the reaction tube (100) have the same curvature.

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