Semiconductor structure and method of forming the same

Abstract

Embodiments of the present disclosure provide a semiconductor structure and a forming method thereof. The method comprises: providing a semiconductor substrate; the semiconductor substrate is formed with a stack structure and an isolation structure arranged alternately along a first direction; forming a support structure in the stack structure and the isolation structure; etching the stack structure and the isolation structure to form a plurality of zigzag first semiconductor columns arranged in an array along the first direction and a second direction, and a gap is formed between the zigzag first semiconductor columns; wherein the zigzag first semiconductor column comprises a first protruding structure and a first recessed structure arranged alternately along a third direction, and the zigzag first semiconductor column is supported by the support structure; the first direction, the second direction and the third direction are perpendicular to each other, and the second direction is perpendicular to the upper surface of the semiconductor substrate; and forming a capacitor structure in the gap.

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