Laminated battery and preparation method

Abstract

The present invention provides a tandem cell and a preparation method, relating to the field of solar cells. The tandem cell comprises a base cell, a tunneling composite layer, a nickel oxide hole transport layer, an aluminum oxide film, an aluminum oxide nanoparticle layer, and a perovskite layer, stacked in sequence. Compared to existing technologies, due to the high stability of aluminum oxide materials, the tandem cell utilizes the aluminum oxide film and the aluminum oxide nanoparticle layer to passivate the surface of the nickel oxide hole transport layer, thereby enhancing the passivation effect of the nickel oxide hole transport layer and thus improving the battery performance of the tandem cell.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a stacked cell and a preparation method thereof. Background Art

[0002] The continuous depletion of non-renewable resources such as coal, oil, and natural gas has made the search and research of new energy sources a hot topic of research both domestically and internationally. New and clean energy sources are a constant pursuit, with solar photovoltaics being the most widely utilized. Currently, the main photovoltaic applications include crystalline silicon solar cells, organic polymer solar cells (OPVs), copper indium gallium selenide (CIGS), and perovskite solar cells. Perovskite products are particularly favored by researchers for their ultra-low-cost preparation processes. They exhibit a suitable band gap, high absorption coefficient, long charge mobility, and long diffusion length, and are easily and cost-effectively processed.

[0003] Perovskite solar cells utilize perovskite-type organic metal halide semiconductors as light-absorbing materials. Currently, international research and development of perovskite solar cells is still primarily in the laboratory stage. To improve efficiency, tandem cells combining perovskites with other cell types have emerged. Tandem cells combining perovskites with heterojunction (HJT) are one important approach, but existing tandem cells suffer from poor passivation and performance. Summary of the Invention

[0004] The present invention provides a stacked battery and a preparation method thereof, which can improve the passivation effect and the battery performance at the same time.

[0005] The present invention provides a stacked battery, which includes a bottom battery and further includes:

[0006] a tunneling recombination layer, wherein the tunneling recombination layer is used for carrier tunneling recombination;

[0007] Nickel oxide hole transport layer, used to drive the directional movement of carriers, thereby transmitting load;

[0008] An aluminum oxide film and an aluminum oxide nanoparticle layer, both of which are used to collect carriers;

[0009] The perovskite layer is used for recombination of charge carriers.

[0010] Optionally, the thickness of the aluminum oxide film is in the range of 1 nm to 10 nm, and the thickness of the aluminum oxide nanoparticle layer is in the range of 1 nm to 5 nm.

[0011] Optionally, the material of the perovskite layer includes at least one of lead chloride, cesium bromide and lead iodide.

[0012] The present invention also provides a method for preparing a stacked battery, the method comprising:

[0013] forming a tunneling recombination layer on one side of the bottom cell;

[0014] forming a nickel oxide hole transport layer on a surface of the tunneling composite layer away from the bottom cell;

[0015] forming an aluminum oxide film on a surface of the nickel oxide hole transport layer away from the tunneling composite layer;

[0016] An aluminum oxide nanoparticle layer is formed on the surface of the aluminum oxide film on a side away from the nickel oxide hole transport layer.

[0017] Optionally, the step of forming the tunneling composite layer on one side of the bottom cell includes:

[0018] The tunneling composite layer is formed on one side of the bottom cell by magnetron sputtering.

[0019] Optionally, the step of forming the nickel oxide hole transport layer on a surface of the tunneling composite layer away from the bottom cell includes:

[0020] The nickel oxide hole transport layer is deposited on a surface of the tunneling composite layer away from the bottom cell by magnetron sputtering.

[0021] Optionally, the step of forming an aluminum oxide film on a surface of the nickel oxide hole transport layer away from the tunneling composite layer includes:

[0022] An aluminum oxide film is deposited on the surface of the nickel oxide hole transport layer away from the tunneling composite layer by atomic deposition technology.

[0023] Optionally, the step of forming an aluminum oxide film on a surface of the nickel oxide hole transport layer away from the tunneling composite layer further comprises:

[0024] Using water vapor as an oxygen source and trimethylaluminum as an aluminum source, a uniform and dense aluminum oxide film is formed using ozone in a temperature range of 80°C-200°C, and then an inert gas is blown in for 10s-30s to remove the trimethylaluminum, wherein: the time for introducing the water vapor is 100ms-800ms, the time for introducing the trimethylaluminum is 100ms-500ms, and the time for the inert gas cleaning is 10s-30s.

[0025] Optionally, the step of forming an aluminum oxide nanoparticle layer on a surface of the aluminum oxide film away from the nickel oxide hole transport layer comprises:

[0026] An aluminum oxide nanoparticle layer is deposited on a surface of the aluminum oxide film on a side away from the nickel oxide hole transport layer by inkjet or wet coating technology.

[0027] Optionally, the preparation method further comprises:

[0028] A perovskite film is deposited on a surface of the aluminum oxide nanoparticle layer away from the aluminum oxide film by using one of evaporation, coating or inkjet technology.

[0029] The beneficial effects of the laminated battery and the preparation method of the present invention include:

[0030] This tandem battery comprises a bottom cell, a tunneling composite layer, a nickel oxide hole transport layer, an aluminum oxide film, an aluminum oxide nanoparticle layer, and a perovskite layer, stacked in sequence. Compared to existing technologies, due to the inherently high stability of aluminum oxide, this tandem battery utilizes the aluminum oxide film and aluminum oxide nanoparticle layer to jointly passivate the surface of the nickel oxide hole transport layer. This results in a more stable passivation process, enhancing the passivation effect on the nickel oxide hole transport layer and thus improving the battery performance of the tandem battery.

[0031] This method for preparing a tandem battery includes forming a tunneling composite layer on one side of a bottom battery; forming a nickel oxide hole transport layer on the surface of the tunneling composite layer away from the bottom battery; forming an aluminum oxide film on the surface of the nickel oxide hole transport layer away from the tunneling composite layer; and forming an aluminum oxide nanoparticle layer on the surface of the aluminum oxide film away from the nickel oxide hole transport layer. When used, this method for preparing a tandem battery can achieve uniform and dense deposition of the aluminum oxide film and aluminum oxide nanoparticles. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0033] Figure 1 A schematic structural diagram of the stacked battery provided in this embodiment;

[0034] Figure 2 This is a flow chart of the method for preparing the stacked battery provided in this embodiment.

[0035] Icon: 10-bottom cell; 20-tunneling composite layer; 30-nickel oxide hole transport layer; 41-aluminum oxide film; 42-aluminum oxide nanoparticle layer; 50-perovskite layer; 60-electron transport layer; 70-transparent oxide conductive layer. DETAILED DESCRIPTION

[0036] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0037] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are intended to fall within the scope of protection of the present invention.

[0038] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0039] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the accompanying drawings, or is the orientation or position relationship in which the product of the invention is usually placed when in use. It is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be understood as a limitation on the present invention.

[0040] It should be noted that, in the absence of conflict, the features in the embodiments of the present invention may be combined with each other.

[0041] First embodiment

[0042] Please refer to Figure 1-Figure 2 This embodiment provides a stacked battery that can improve the passivation effect, thereby improving battery performance.

[0043] The stacked cell comprises a bottom cell 10, a tunneling composite layer 20, a nickel oxide hole transport layer 30, an aluminum oxide film 41, an aluminum oxide nanoparticle layer 42, and a perovskite layer 50, which are stacked in sequence. The tunneling composite layer 20 is used for carrier tunneling recombination; the nickel oxide hole transport layer 30 is used to drive carriers in a directional motion, thereby transmitting load; the aluminum oxide film 41 and the aluminum oxide nanoparticle layer 42 are both used to collect carriers; the perovskite layer 50 is used for carrier recombination; the electron transport layer 60; and the transparent oxide conductive layer 70.

[0044] Compared with the existing technology, due to the high stability of the aluminum oxide material itself, the stacked battery in this embodiment uses an aluminum oxide film 41 and an aluminum oxide nanoparticle layer 42 to jointly passivate the nickel oxide hole transport layer 30. The passivation process is more stable and can improve the passivation effect of the nickel oxide hole transport layer 30, thereby improving the battery performance of the stacked battery.

[0045] Specifically, the thickness of the aluminum oxide film 41 ranges from 1 nm to 10 nm. In this embodiment, the thickness of the aluminum oxide film 41 is 1 nm. In other embodiments, the thickness of the aluminum oxide film 41 may be 3 nm, 5 nm, or 10 nm, which is not specifically limited here.

[0046] Specifically, the thickness of the aluminum oxide nanoparticle layer 42 ranges from 1 nm to 5 nm. In this embodiment, the thickness of the aluminum oxide nanoparticle layer 42 is 2 nm. In other embodiments, the thickness of the aluminum oxide nanoparticle layer 42 may be 1 nm, 4 nm, or 5 nm, which is not specifically limited herein.

[0047] Specifically, the thickness of the nickel oxide hole transport layer 30 ranges from 10 nm to 25 nm. In this embodiment, the thickness of the nickel oxide hole transport layer 30 is 12 nm. In other embodiments, the thickness of the nickel oxide hole transport layer 30 may be 10 nm, 18 nm, 22 nm, or 25 nm, which is not specifically limited here.

[0048] Specifically, the thickness of the bottom cell 10 ranges from 80 μm to 200 μm. In this embodiment, the thickness of the bottom cell 10 is 80 μm. In other embodiments, the thickness of the bottom cell 10 may be 120 μm, 130 μm, or 200 μm. This is not specifically limited here.

[0049] In this embodiment, the bottom cell 10 is a heterojunction (HJT) cell or a copper indium gallium selenide (CIGS) cell.

[0050] Furthermore, a transparent conductive oxide (TCO) film is provided on the surface of the bottom cell 10 adjacent to the tunneling composite layer 20. The TCO film has a thickness ranging from 5 nm to 10 nm. In this embodiment, the TCO film has a thickness of 5 nm. In other embodiments, the TCO film may have a thickness of 6 nm, 7 nm, or 10 nm, without specific limitation.

[0051] Specifically, the thickness of the perovskite layer 50 ranges from 200 nm to 300 nm. In this embodiment, the thickness of the perovskite layer 50 is 210 nm. In other embodiments, the thickness of the perovskite layer 50 may be 240 nm, 260 nm, or 300 nm, which is not specifically limited herein.

[0052] It should be noted that the perovskite layer 50 in this embodiment has a wide bandgap structure, and the perovskite layer 50 can absorb short-wavelength sunlight.

[0053] More preferably, the material of the perovskite layer 50 includes at least one of lead chloride, cesium bromide, and lead iodide. Specifically, the material of the perovskite layer 50 includes lead chloride and cesium bromide. In other embodiments, the material of the perovskite layer 50 includes lead chloride, cesium bromide, and lead iodide, or cesium bromide and lead iodide. This is not specifically limited here.

[0054] In summary, the embodiments of the present invention provide a tandem battery that first undergoes carrier tunneling recombination through the tunneling recombination layer 20; then, the nickel oxide hole transport layer 30 drives the carriers in directional motion, thereby transmitting the load; and finally, the aluminum oxide film 41 and the aluminum oxide nanoparticle layer 42 collect the carriers. Compared to the prior art, due to the high stability of the aluminum oxide material itself, the tandem battery utilizes the aluminum oxide film 41 and the aluminum oxide nanoparticle layer 42 to jointly passivate the surface of the nickel oxide hole transport layer 30. This makes the passivation process more stable, improves the passivation effect of the nickel oxide hole transport layer 30, and thus enhances the battery performance of the tandem battery.

[0055] An embodiment of the present invention further provides a method for preparing a laminated battery, which is used to prepare the above-mentioned laminated battery. The preparation method comprises:

[0056] S1 : forming the tunneling composite layer 20 on one side of the bottom cell 10 .

[0057] Specifically, the tunneling composite layer 20 is formed on one side of the bottom cell 10 by magnetron sputtering, and the formed tunneling composite layer 20 is specifically indium tin oxide glass.

[0058] S2 : forming a nickel oxide hole transport layer 30 on a surface of the tunneling composite layer 20 away from the bottom cell 10 .

[0059] Specifically, the nickel oxide hole transport layer 30 is formed on the surface of the tunneling composite layer 20 away from the bottom cell 10 by magnetron sputtering.

[0060] Specifically, a nickel oxide hole transport layer 30 with a thickness of 10 nm to 25 nm is deposited on the surface of a silicon wafer substrate having a transparent conductive oxide film with a thickness of 5 nm to 10 nm by magnetron sputtering.

[0061] S3 : forming an aluminum oxide film 41 on the surface of the nickel oxide hole transport layer 30 away from the tunneling composite layer 20 .

[0062] Specifically, a 1 nm to 10 nm Al 2 O 3 thin film is continuously deposited on the substrate in step S2 by atomic deposition technology.

[0063] It should be noted that water vapor is used as an oxygen source and trimethylaluminum is used as an aluminum source, and ozone is used to deposit a uniform and dense ultrathin Al2O3 film at a low temperature of 80°C to 200°C. An inert gas is then blown in to purge the film to remove the trimethylaluminum. Preferably, the uniform and dense Al2O3 film is deposited using atomic deposition technology.

[0064] Among them, the growth process using water vapor as the oxygen source and trimethylaluminum as the aluminum source includes: the reaction temperature of the chamber is 80°C-200°C, the time for introducing trimethylaluminum is 100ms-500ms, the time for cleaning with inert gas is 10s-30s, the time for introducing water vapor is 100ms-800ms, the time for cleaning with nitrogen is 10s-30s, and the above process is repeated 30-100 times.

[0065] S4 : forming an aluminum oxide nanoparticle layer 42 on the surface of the aluminum oxide film 41 away from the nickel oxide hole transport layer 30 .

[0066] Specifically, Al2O3 nanoparticles with a size of 1 nm to 5 nm are continuously deposited on the substrate in step S3 using inkjet or wet coating technology.

[0067] Among them, after the Al2O3 slurry is diluted with ethanol solvent at a mass ratio of 1:10 to 1:100, a layer of Al2O3 particles is evenly deposited on the above-mentioned substrate using an inkjet printing device, and annealed at 150°C for 10min-30min to remove residual organic solvent.

[0068] More preferably, the aluminum oxide nanoparticle layer 42 is composed of highly crystalline nanoparticles.

[0069] S5: depositing a perovskite film on the surface of the aluminum oxide nanoparticle layer 42 away from the aluminum oxide film 41 by evaporation, coating or inkjet technology.

[0070] Taking the preparation of perovskite films by evaporation and solution as an example, on the substrate in step S4, a 200nm-300nm lead iodide (PbI2) thin film layer containing a small amount of lead chloride (PbCl2) and cesium bromide (CsBr) is deposited by vacuum evaporation, wherein the evaporation rate ratio of PbCl2, PbI2 and CsBr is 1:0.05:0.1.

[0071] After the film is completed, it is transferred to the solution inkjet stage. Using an inkjet printer, an organic ammonium salt solution containing formamidine hydroiodide, formamidine hydrobromide, and methylamine hydrochloride in a mass ratio of 90:9:9 is used as the solute and isopropyl alcohol is used as the solvent. The film is then pre-cured using infrared heating, then heated at 120°C-150°C for 10-30 minutes, and then annealed in an annealing furnace. The infrared heating temperature is 80°C and the heating time is 5-10 minutes.

[0072] S6: On the substrate of step S5, an electron transport layer 60, a PVD sputtered transparent oxide conductive layer 70, etc. are sequentially deposited.

[0073] Specifically, on the substrate in step S5 , an electron transport layer 60 is deposited on a surface of the perovskite layer 50 away from the aluminum oxide nanoparticle layer 42 by a thermal evaporation process.

[0074] A layer of SnO is deposited on the surface of the electron transport layer 60 away from the perovskite layer 50 by atomic deposition technology. x Specifically, a layer of SnO2 can be deposited as a buffer layer by atomic deposition technology.

[0075] In this embodiment, the thickness of the buffer layer is 10 nm.

[0076] A transparent conductive layer, ie, a transparent oxide conductive layer 70 , is deposited on the surface of the buffer layer away from the electron transport layer 60 by vacuum sputtering technology.

[0077] A layer of metal grid line is deposited on the surface of the transparent conductive layer away from the buffer layer by using evaporation technology to serve as the top electrode.

[0078] In this embodiment, the material of the metal gate line includes but is not limited to Cu, Al, Ag, W or Pt.

[0079] Furthermore, in this embodiment, the thickness of the metal gate line is 150 μm.

[0080] The method for preparing this tandem battery includes forming a tunneling composite layer 20 on one side of a bottom cell 10 by magnetron sputtering, forming a nickel oxide hole transport layer 30 on the side of the tunneling composite layer 20 away from the bottom cell 10 by magnetron sputtering, forming an aluminum oxide film 41 on the side of the nickel oxide hole transport layer 30 away from the tunneling composite layer 20 by atomic deposition, and forming an aluminum oxide nanoparticle layer 42 on the side of the aluminum oxide film 41 away from the nickel oxide hole transport layer 30. During use, this method for preparing the tandem battery deposits the aluminum oxide film 41 by atomic deposition and simultaneously deposits the aluminum oxide nanoparticle layer 42 by inkjet or wet coating, achieving uniform and dense deposition of the aluminum oxide film 41 and the aluminum oxide nanoparticle layer 42.

[0081] Second embodiment

[0082] This embodiment provides a stacked battery, which includes a bottom battery 10, a tunneling composite layer 20, a nickel oxide hole transport layer 30, an aluminum oxide film 41, a perovskite layer 50, an electron transport layer 60 and a transparent oxide conductive layer 70 stacked in sequence.

[0083] The difference between the stacked battery in this embodiment and the stacked battery in the first embodiment is that in this embodiment, the nickel oxide hole transport layer 30 is passivated only by the aluminum oxide film 41 , thereby improving the passivation effect of the nickel oxide hole transport layer 30 .

[0084] In this embodiment, the thickness of the aluminum oxide film 41 is 3 nm. In other embodiments, the thickness of the aluminum oxide film 41 may be 5 nm, 7 nm, or 8 nm, which is not specifically limited here.

[0085] In this embodiment, the thickness of the nickel oxide hole transport layer 30 is 10 nm. In other embodiments, the thickness of the nickel oxide hole transport layer 30 may be 16 nm, 18 nm, or 24 nm, which is not specifically limited here.

[0086] In this embodiment, the thickness of the bottom cell 10 is 160 μm. In other embodiments, the thickness of the bottom cell 10 may be 140 μm, 190 μm, or 110 μm, which is not specifically limited here.

[0087] In this embodiment, the thickness of the perovskite layer 50 is 200 nm. In other embodiments, the thickness of the perovskite layer 50 is 220 nm, 240 nm, or 280 nm, which is not specifically limited here.

[0088] This embodiment further provides a method for preparing a stacked battery, which is used to prepare the above-mentioned stacked battery. The preparation method includes:

[0089] S1: forming the tunneling composite layer 20 on the bottom cell 10 .

[0090] In this embodiment, the tunneling composite layer 20 is formed on the bottom cell 10 by magnetron sputtering. In other embodiments, the tunneling composite layer 20 can also be deposited by electron beam evaporation, thermal evaporation, atomic layer deposition, spin coating, or doctor blade coating, which are not specifically limited here.

[0091] S2 : forming a nickel oxide hole transport layer 30 on a surface of the tunneling composite layer 20 away from the bottom cell 10 .

[0092] Specifically, a nickel oxide hole transport layer 30 with a thickness of 10 nm to 25 nm is deposited on the surface of a silicon wafer substrate having a transparent conductive oxide film with a thickness of 5 nm to 10 nm by magnetron sputtering.

[0093] S3 : forming an aluminum oxide film 41 on the surface of the nickel oxide hole transport layer 30 away from the tunneling composite layer 20 .

[0094] Specifically, a 1 nm to 10 nm Al 2 O 3 thin film is continuously deposited on the substrate in step S2 by atomic deposition technology.

[0095] It should be noted that a uniform, dense, ultrathin Al2O3 film is deposited using water vapor as an oxygen source and trimethylaluminum as an aluminum source at a low temperature of 80°C to 200°C using ozone. An inert gas purge is then performed to remove the trimethylaluminum. Preferably, the uniform, dense Al2O3 film is deposited using atomic deposition technology.

[0096] Among them, the growth process using water vapor as the oxygen source and trimethylaluminum as the aluminum source includes: the reaction temperature of the chamber is 80°C-200°C, the time for introducing trimethylaluminum is 100ms-500ms, the time for cleaning with inert gas is 10s-30s, the time for introducing water vapor is 100ms-800ms, the time for cleaning with nitrogen is 10s-30s, and the above process is repeated 30-100 times.

[0097] S4: depositing a perovskite film on the surface of the aluminum oxide film 41 away from the nickel oxide hole transport layer 30 .

[0098] Specifically, the deposition method of the perovskite film includes one of evaporation, coating or inkjet.

[0099] Taking the evaporation and solution method for preparing perovskite thin films as an example, on the substrate in step S3, a lead iodide (PbI2) thin film layer containing a small amount of lead chloride (PbCl2) and cesium bromide (CsBr) is deposited by vacuum evaporation, wherein the thickness of the thin film layer is 200nm-300nm, and the evaporation rate ratio of PbCl2, PbI2 and CsBr is 1:0.05:0.1.

[0100] After the film is completed, it is transferred to the solution inkjet stage. Using an inkjet printer, an organic ammonium salt solution containing formamidine hydroiodide, formamidine hydrobromide, and methylamine hydrochloride in a mass ratio of 90:9:9 is used as the solute and isopropyl alcohol is used as the solvent. The film is then pre-cured using infrared heating, then heated at 120°C-150°C for 10-30 minutes, and then annealed in an annealing furnace. The infrared heating temperature is 80°C and the heating time is 5-10 minutes.

[0101] S5: On the substrate of step S4, an electron transport layer 60, a PVD sputtered transparent oxide conductive layer 70, etc. are sequentially deposited.

[0102] Specifically, on the substrate in step S4 , an electron transport layer 60 is deposited on a surface of the perovskite layer 50 away from the aluminum oxide film 41 by a thermal evaporation process.

[0103] A layer of SnO is deposited on the surface of the electron transport layer 60 away from the perovskite layer 50 by atomic deposition technology. x Specifically, a layer of SnO2 can be deposited as a buffer layer by atomic deposition technology.

[0104] In this embodiment, the thickness of the buffer layer is 14 nm.

[0105] A transparent conductive layer, ie, a transparent oxide conductive layer 70 , is deposited on the surface of the buffer layer away from the electron transport layer 60 by vacuum sputtering technology.

[0106] A layer of metal grid line is deposited on the surface of the transparent conductive layer away from the buffer layer by using evaporation technology to serve as the top electrode.

[0107] In this embodiment, the material of the metal gate line includes but is not limited to Cu, Al, Ag, W or Pt.

[0108] Furthermore, in this embodiment, the thickness of the metal gate line is 170 μm.

[0109] The stacked cell provided in this embodiment includes a bottom cell 10, a tunneling composite layer 20, a nickel oxide hole transport layer 30, an aluminum oxide film 41, and a perovskite layer 50, which are stacked in sequence. Compared to the prior art, due to the high stability of the aluminum oxide material itself, this stacked cell uses aluminum oxide to passivate the surface of the nickel oxide hole transport layer 30. The passivation process is more stable, which can improve the passivation effect of the nickel oxide hole transport layer 30, thereby improving the battery performance of the stacked cell.

[0110] Comparative Example

[0111] Compared with the laminated battery in the first embodiment, the laminated battery in this comparative example does not have an aluminum oxide film 41 and an aluminum oxide nanoparticle layer 42, and the other structures are the same as those in the first embodiment.

[0112] It can be understood that the stacked cell in the comparative example includes a bottom cell 10, a tunneling composite layer 20, a nickel oxide hole transport layer 30, a perovskite layer 50, an electron transport layer 60 and a transparent oxide conductive layer 70 stacked in sequence.

[0113] In this comparative example, the top surface of the perovskite layer 50 is in direct contact with the electron transport layer 60 , and the bottom surface of the perovskite layer 50 is in direct contact with the nickel oxide hole transport layer 30 .

[0114] In this comparative example, the thickness of the nickel oxide hole transport layer 30 is 22 nm, the thickness of the bottom cell 10 is 220 μm, and the thickness of the perovskite layer 50 is 250 nm.

[0115] The battery performance parameters of the stacked batteries in the first embodiment, the second embodiment and the comparative example are compared in Table 1:

[0116] Table 1

[0117] <![CDATA[Jsc(mA / cm 2 )]]> Voc(V) FF Eff(%) First embodiment 19.87 1.856 0.808 29.79 Second embodiment 19.53 1.841 0.776 27.90 Comparative Example 19.26 1.811 0.742 25.88

[0118] In Table 1, Jsc represents short-circuit current density, Voc represents open-circuit voltage, FF represents fill factor, and Eff represents light conversion efficiency. As can be seen from Table 1, the tandem cell without the aluminum oxide film 41 and the aluminum oxide nanoparticle layer 42 in the comparative example exhibits the worst photoelectric conversion efficiency. In terms of short-circuit current density, the two embodiments are 0.61 mA / cm higher than the comparative example. 2 , 0.27mA / cm 2 In terms of open-circuit voltage, the two examples were 0.045V and 0.030V higher than the comparative example, respectively. In terms of fill factor, the two examples were 0.066 and 0.034 higher than the comparative example, respectively. In terms of light conversion efficiency, the two examples were 3.91% and 2.02% higher than the comparative example, respectively. This more intuitively demonstrates that the tandem cell provided by this example outperforms existing products in all key core performance indicators, indicating that the tandem cell improves light conversion efficiency by enhancing passivation.

[0119] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A stacked battery comprising a bottom battery (10), characterized in that: Also includes the following cascade settings: A tunneling composite layer (20), wherein the tunneling composite layer (20) is used for carrier tunneling recombination; A nickel oxide hole transport layer (30) is used to drive carriers to move in a directional manner, thereby transmitting loads; An aluminum oxide film (41) and an aluminum oxide nanoparticle layer (42), both of which are used to collect carriers, the aluminum oxide nanoparticle layer (42) is arranged on a side of the aluminum oxide film (41) away from the nickel oxide hole transport layer (30), the aluminum oxide nanoparticle layer (42) is uniformly arranged, the aluminum oxide film (41) has a thickness ranging from 1 nm to 10 nm, and the aluminum oxide nanoparticle layer (42) has a thickness ranging from 1 nm to 5 nm; The perovskite layer (50) is used for recombination of carriers.

2. The laminated battery according to claim 1, characterized in that: The material of the perovskite layer (50) includes at least one of lead chloride, cesium bromide and lead iodide.

3. A method for preparing a stacked battery, characterized in that: The preparation method comprises: forming a tunneling composite layer (20) on one side of the bottom battery (10); forming a nickel oxide hole transport layer (30) on a surface of the tunneling composite layer (20) away from the bottom battery (10); forming an aluminum oxide film (41) on a surface of the nickel oxide hole transport layer (30) away from the tunneling composite layer (20); An aluminum oxide nanoparticle layer (42) is uniformly formed on the surface of the aluminum oxide film (41) on a side away from the nickel oxide hole transport layer (30).

4. The method for preparing a laminated battery according to claim 3, wherein: The step of forming the tunneling composite layer (20) on one side of the bottom battery (10) comprises: The tunneling composite layer (20) is formed on one side of the bottom battery (10) by magnetron sputtering.

5. The method for preparing a laminated battery according to claim 3, wherein: The step of forming the nickel oxide hole transport layer (30) on a surface of the tunneling composite layer (20) away from the bottom battery (10) comprises: The nickel oxide hole transport layer (30) is deposited on a surface of the tunneling composite layer (20) away from the bottom battery (10) by magnetron sputtering.

6. The method for preparing a laminated battery according to claim 3, wherein: The step of forming an aluminum oxide film (41) on a surface of the nickel oxide hole transport layer (30) away from the tunneling composite layer (20) comprises: An aluminum oxide film (41) is deposited on a surface of the nickel oxide hole transport layer (30) away from the tunneling composite layer (20) by atomic deposition technology.

7. The method for preparing a stacked battery according to claim 6, wherein: The step of forming an aluminum oxide film (41) on a surface of the nickel oxide hole transport layer (30) away from the tunneling composite layer (20) further comprises: Using water vapor as an oxygen source and trimethylaluminum as an aluminum source, a uniform and dense aluminum oxide film (41) is formed using ozone in a temperature range of 80°C to 200°C, and then an inert gas is blown in for cleaning for 10s to 30s to remove the trimethylaluminum, wherein: the time for passing the water vapor is 100ms to 800ms, the time for passing the trimethylaluminum is 100ms to 500ms, and the time for the inert gas cleaning is 10s to 30s.

8. The method for preparing a laminated battery according to claim 3, wherein: The step of forming an aluminum oxide nanoparticle layer (42) on a surface of the aluminum oxide film (41) away from the nickel oxide hole transport layer (30) comprises: An aluminum oxide nanoparticle layer (42) is deposited on the surface of the aluminum oxide film (41) on the side away from the nickel oxide hole transport layer (30) by inkjet or wet coating technology.

9. The method for preparing a stacked battery according to claim 3, wherein: The preparation method further comprises: A perovskite film is deposited on a surface of the aluminum oxide nanoparticle layer (42) away from the aluminum oxide film (41) by evaporation, coating or inkjet technology.

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