Method for manufacturing a semiconductor device and semiconductor device
By forming a pad layer and a barrier structure on the back of the wafer, the problem of poor wafer edge flatness was solved, the exposure effect was improved, the yield was increased and the cost was reduced.
CN117457476BActive Publication Date: 2026-06-23SWAYSURE TECHNOLOGY CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SWAYSURE TECHNOLOGY CO LTD
- Filing Date
- 2023-10-24
- Publication Date
- 2026-06-23
AI Technical Summary
Technical Problem
As semiconductor device dimensions decrease, the unevenness of the wafer's outer edge leads to incomplete exposure, affecting yield.
Method used
A padding layer and a barrier structure are formed on the back side of the wafer to cover the curved transition area. The padding and barrier structures are formed by etching to improve the flatness of the outer edge.
Benefits of technology
The raised and blocked structures improved the flatness of the wafer's outer edge, reduced the area of incomplete exposure, increased yield, and lowered manufacturing costs.
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Smart Images
Figure CN117457476B_ABST
Abstract
The application belongs to the technical field of semiconductor, and particularly relates to a manufacturing method of a semiconductor device and the semiconductor device, which comprises the following steps: forming a pad layer on at least the back surface of a wafer, wherein the back surface of the wafer comprises a first central plane area and a first arc surface transition area surrounding the first central plane area, the first arc surface transition area connects the first central plane area and an outer circle of the wafer, and the pad layer covers an area larger than the first arc surface transition area; forming a blocking structure on the side of the pad layer away from the wafer, wherein the blocking structure covers at least the first arc surface transition area, and the blocking structure on the back surface of the wafer has a first inner hole with an inner diameter of d1; and removing part of the pad layer in the first inner hole to form a pad structure, wherein the pad structure has a second inner hole with an inner diameter of d1. The blocking structure and the pad structure can pad up the outer edge of the wafer, improve the flatness of the outer edge of the wafer, reduce the area of the outer edge of the wafer exceeding the focal depth limit, improve the incomplete exposure problem, and improve the yield of the outer edge of the wafer.
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