Evaporation mask

Abstract

To solve one of the problems, the present invention provides an evaporation mask capable of reducing evaporation unevenness. The evaporation mask of the present invention includes a mask body in a film shape; a holding frame surrounding the mask body; and a connecting member between the mask body and the holding frame. The mask body includes a first region overlapping the connecting member; a second region surrounded by the first region; and a third region between the first region and the second region. The connecting member includes a protruding portion separating a first straight line. The first straight line connects a first point on a first boundary line of the first region and the third region and a second point away from the first point. The protruding portion is capable of protruding toward an inner side of the mask body with respect to the first boundary line.

Description

Technical Field

[0001] One embodiment of the present invention relates to a vapor deposition mask. Additionally, the present invention relates to a method for manufacturing a vapor deposition mask. One embodiment of the present invention particularly relates to a vapor deposition mask having a thin-film-shaped mask body on a mask frame. Furthermore, one embodiment of the present invention particularly relates to a method for manufacturing a vapor deposition mask having a thin-film-shaped mask body on a mask frame. Background Technology

[0002] Examples of flat panel display devices include liquid crystal displays (LCDs) and organic EL (electroluminescence) displays. These display devices are structures obtained by laminating thin films of various materials, including insulators, semiconductors, and conductors, onto a substrate. By appropriately patterning and connecting these thin films, they can achieve the function of a display device.

[0003] Methods for forming thin films can be broadly categorized into vapor-phase methods, liquid-phase methods, and solid-phase methods. Vapor-phase methods can be further divided into physical vapor-phase methods and chemical vapor-phase methods. As a representative example of physical vapor-phase methods, vapor deposition is known. The simplest method among vapor deposition methods is vacuum vapor deposition. Vacuum vapor deposition involves heating the material under high vacuum, causing it to sublimate or evaporate to generate material vapor (hereinafter, these are collectively referred to as vaporization). In the area where the material is deposited (hereinafter, referred to as the vapor deposition area), the vaporized material solidifies and deposits, thereby obtaining a thin film of the material. To selectively form a thin film in the vapor deposition area and prevent material deposition in areas outside the vapor deposition area (hereinafter, referred to as the non-vapor deposition area), a mask (vapor deposition mask) is used for vacuum vapor deposition (see Patent Documents 1 and 2).

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2009-087840

[0007] Patent Document 2: Japanese Patent Application Publication No. 2013-209710 Summary of the Invention

[0008] The technical problem that the invention aims to solve

[0009] In display devices manufactured using vapor deposition masks, there is a problem of uneven vapor deposition in the display area, leading to a decrease in the yield of the display device. It is known that this unevenness in the display area is caused by damage to the vapor deposition mask, and that the damaged area will expand with the increase of the number of times the vapor deposition mask is used.

[0010] In view of the above problems, one of the technical problems to be solved by the present invention is to provide a vapor deposition mask that can reduce vapor deposition non-uniformity. Furthermore, one of the technical problems to be solved by the present invention is to provide a method for manufacturing a vapor deposition mask that can reduce vapor deposition non-uniformity.

[0011] Means for solving technical problems

[0012] An embodiment of the vapor deposition mask of the present invention includes: a thin-film mask body; a retaining frame surrounding the mask body; and a connecting member located between the mask body and the retaining frame. The mask body has: a first region overlapping with the connecting member; a second region surrounded by the first region; and a third region located between the first region and the second region. The connecting member has an extension that separates a first straight line, the first straight line being a straight line connecting a first point on a first boundary line between the first region and the third region and a second point away from the first point. Attached Figure Description

[0013] Figure 1 This is a schematic plan view of a vapor deposition mask according to one embodiment of the present invention.

[0014] Figure 2 This is a schematic plan view of a vapor deposition mask according to one embodiment of the present invention.

[0015] Figure 3 This is a schematic plan view of a vapor deposition mask according to one embodiment of the present invention.

[0016] Figure 4 In the diagram, (A) is a schematic cross-sectional view of a vapor deposition mask according to one embodiment of the present invention, and (B) is a schematic cross-sectional view of a vapor deposition mask according to one embodiment of the present invention.

[0017] Figure 5 This is a schematic plan view of a vapor deposition mask according to one embodiment of the present invention.

[0018] Figure 6A This is a schematic plan view of a vapor deposition mask according to one embodiment of the present invention.

[0019] Figure 6B This is a schematic plan view of a vapor deposition mask according to one embodiment of the present invention.

[0020] Figure 7A This is a schematic cross-sectional view of a vapor deposition mask according to one embodiment of the present invention.

[0021] Figure 7B This is a schematic cross-sectional view of a vapor deposition mask according to one embodiment of the present invention.

[0022] Figure 8AThis is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0023] Figure 8B This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0024] Figure 8C This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0025] Figure 9A This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0026] Figure 9B This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0027] Figure 10A This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0028] Figure 10B This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0029] Figure 11A This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0030] Figure 11B This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0031] Figure 11C This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0032] Figure 12A This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0033] Figure 12B This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0034] Figure 13 This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0035] Figure 14A This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0036] Figure 14BThis is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0037] Figure 15 This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0038] Figure 16A This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0039] Figure 16B This is a schematic cross-sectional view illustrating a method for fabricating a vapor deposition mask according to one embodiment of the present invention.

[0040] Figure 17 This is a schematic cross-sectional view of a vapor deposition mask according to one embodiment of the present invention.

[0041] Explanation of reference numerals in the attached figures

[0042] 100: Evaporation mask, 102: Mask body, 104: Holding frame, 106: Connecting component, 108: First region, 110: Second region, 112: Third region, 114: Opening pattern, 114: First pattern portion, 116: Frame, 118: First point, 120: Second point, 122: First straight line, 124: First boundary line, 126: First portion, 128: Frame, 130: Protrusion, 132: Vertex, 140: Second boundary line, 142: Second straight line, 144: Opening, 146: Frame, 148: First support substrate, 150 152: First resist mask, 154: Opening, 156: Inner region, 158: Outer region, 160: Light-transmitting part, 162: Adhesive layer, 164: First photomask, 166: Outer periphery, 168: Light-shielding part, 170: Second support substrate, 172: Inner region, 174: Exposure area, 176: Second resist mask, 178: Dummy pattern part, 180: Protective film, 182: Photocurable resin film, 184: Release film, 186: Protective film, 188: Second photomask, 190: Thin film, 192: Third resist mask. Detailed Implementation

[0043] Hereinafter, various embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention can be implemented in various ways without departing from its spirit and is not to be interpreted as limited to the description of the embodiments illustrated below.

[0044] To make the description clearer, the accompanying drawings sometimes schematically show the width, thickness, shape, etc. of various parts compared to the actual embodiment. However, the examples shown in the drawings are merely illustrative and are not intended to limit the interpretation of the invention. In this specification and the drawings, for components that are the same as those previously described with respect to figures that have already appeared, the same reference numerals are sometimes used, and detailed descriptions are appropriately omitted.

[0045] In this invention, when multiple films are formed by etching or irradiating a single film, these films may have different functions and effects. However, these multiple films originate from films formed as the same layer in the same process, and have the same layer structure and the same material. Therefore, these multiple films are defined as films existing in the same layer.

[0046] In this specification and claims, when expressing the manner in which another structure is disposed on a certain structure, if it is only described as "on...", unless otherwise specified, it is defined as including the following two situations: the situation in which another structure is disposed directly above a certain structure in contact with that structure; and the situation in which another structure is disposed above a certain structure, separated by other structures.

[0047] <First Implementation>

[0048] Reference Figure 1 The structure of a vapor deposition mask 100 according to one embodiment of the present invention will be described.

[0049] 1. Overall Structure

[0050] Figure 1 This is a plan view of a vapor deposition mask 100 according to one embodiment of the present invention. Additionally, Figure 1 This refers to the second side of the vapor deposition mask 100, opposite to the first side of the substrate to be vapor-deposited. The vapor deposition mask 100 has a thin-film mask body 102, a holding frame 104, and a connecting member 106. The mask body 102 is connected to the holding frame 104 via the connecting member 106.

[0051] Figure 1 This describes a structure where multiple mask bodies 102 are connected to a holding frame 104. The holding frame 104 has a structure that surrounds the periphery of each of the multiple mask bodies 102. The holding frame 104 has: a frame portion forming the outline of the vapor deposition mask 100; and a portion mounted on the frame portion that corresponds to a partition (intermediate partition). Furthermore, although Figure 1The diagram shows the structure where eight mask bodies 102 are connected to the holding frame 104. However, the number of mask bodies 102 in the vapor deposition mask 100 is not limited and can be appropriately determined according to the size of the vapor deposition substrate and the vapor deposition pattern. In addition, the structure of the holding frame 104 can also be appropriately changed according to the number and arrangement of the mask bodies 102.

[0052] As described above, the retaining frame 104 includes an outer frame portion and an inner partition portion. The partition portion provides rigidity to the frame portion, preventing warping. The partition portion can be constructed by combining multiple components. For example, one component of the partition portion extends from one side of the frame portion to the opposite side. Furthermore, the components of the partition portion are preferably arranged in the longitudinal direction (short side direction of the vapor deposition mask 100) and the transverse direction (long side direction of the vapor deposition mask 100). That is, the partition portion is preferably a grid-like structure in which the components extending in the longitudinal direction intersect with the components extending in the transverse direction. However, the structure of the partition portion is not limited to this. The components of the partition portion may only be arranged in the longitudinal or transverse direction. Furthermore, the width of the frame portion and the width of the partition portion (or the components of the partition portion) can be appropriately determined according to the size of the vapor deposition mask 100. In addition, in order to make the area of ​​the vapor deposition pattern, such as the second region 110 described later, as wide as possible, it is preferable that the width of the partition portion is smaller than the width of the frame portion.

[0053] like Figure 1 As shown, the connecting member 106 is disposed along the retaining frame 104. Furthermore, the connecting member 106 is positioned in the gap between the mask body 102 and the frame portion and the partition portion of the retaining frame 104, contacting the side surface of the mask body 102 and the side surface of the frame portion and the partition portion of the retaining frame 104. That is, when viewed from above, the mask body 102 and the retaining frame 104 do not overlap. However, when viewed in cross-section as described later, the mask body 102 and the retaining frame 104 may overlap.

[0054] The connecting member 106 only needs to be able to connect the mask body 102 to the retaining frame 104. Therefore, the connecting member 106 does not need to be provided on the entire side surface of the frame portion and the partition portion of the retaining frame 104. The connecting member 106 only needs to be provided on at least a portion of the side surface of the frame portion and the partition portion of the retaining frame 104. On the other hand, the thickness of the mask body 102 is very small compared to the thickness of the retaining frame 104. For example, the thickness of the mask body 102 is more than 1 μm and less than 10 μm, and the thickness of the retaining frame 104 is more than 10 μm and less than 2000 μm. Therefore, in order to increase the bonding strength between the mask body 102 and the retaining frame 104, it is preferable that the connecting member 106 is provided on the entire side surface of the mask body 102.

[0055] The mask body 102 can be divided into a first region 108, a second region 110, and a third region 112. The first region 108 is a region arranged along the outer shape 134 of the mask body 102 and overlaps with the connecting member 106. Therefore, the first region 108 is located between the outer shape 134 of the mask body 102 and the first boundary line 124 between the mask body 102 and the connecting member 106. The second region 110 is a region located inside the first region 108. The third region 112 is a region between the first region 108 and the second region 110, located outside the second region. Therefore, as... Figure 1 As shown, the second region 110 is surrounded by the third region 112, and the third region 112 is surrounded by the first region 108.

[0056] The first region 108 and the third region 112 correspond to the non-vaporized regions in the vapor-deposited substrate of the vapor-deposited object. Therefore, it is preferable that the first region 108 and the third region 112 do not have an opening pattern.

[0057] The second region 110 has a plurality of opening patterns 114. These opening patterns 114 extend through the mask body 102. Specifically, an opening pattern extending from the first surface through the second surface is formed in the mask body 102. During vapor deposition, the vapor deposition mask 100 is aligned with the substrate to be vapor deposited in such a way that the vapor deposition area of ​​the substrate to be vapor deposited overlaps with the second region 110. Vapor of the vapor deposition material passes through the opening patterns 114 of the second region 110, and the vapor deposition material is deposited on the vapor deposition area of ​​the substrate to be vapor deposited.

[0058] When the substrate to be vapor-deposited is a substrate for a display device, the opening pattern 114 of the second region 110 is arranged in a manner corresponding to the arrangement of the pixels of the display device. When the pixels of the display device are arranged in a matrix in the x and y directions, the opening pattern 114 is also arranged in a matrix in the same way.

[0059] In addition, Figure 1 In the example, the second region 110 with the opening pattern 114 is described using a rounded rectangle shape, but it can also be changed to a circle or other shapes.

[0060] 2. Peripheral area of ​​the mask body

[0061] Figure 2 Indicates will Figure 1 The enlarged plan view of box 116, enclosed by the dotted line shown. Furthermore, Figure 2 and Figure 1 Similarly, a plan view is shown of the side opposite to the side of the surface that is in contact with or opposite to the surface of the substrate being vapor-deposited during vapor deposition.

[0062] The mask body 102 has an arbitrary first point 118 and a second point 120 away from the first point 118 on the first boundary line 124 between the connecting member 106 and the mask body 102. A first straight line 122 connects the first point 118 and the second point 120. In other words, the mask body 102 has a first point 118 and a second point 120 on the first boundary line 124 between the first region 108 and the third region 112, and the first straight line 122 connects these two points. The first point 118 and the second point 120 are located at the two ends of a straight line on the first boundary line 124. For example, as Figure 2 As shown, the first boundary line 124 is provided along the connecting member 106, and four first straight lines 122 are arranged substantially parallel to the long and short sides of the mask body 102. First points 118 and second points 120 are respectively disposed at the ends or around the ends of these first straight lines 122.

[0063] Furthermore, when multiple second regions 110 are provided on the mask body 102 along a first straight line 122 on the first boundary line 124, a first point 118 and a second point 120 can be provided near different second regions 110 respectively. Therefore, the first point 118 and the second point 120 are configured such that the first straight line 122 does not cross the second region 110 and the third region 112.

[0064] The first straight line 122 is divided into multiple straight lines by the first part 126, which is part of the structure of the connecting member 106. For example... Figure 2 As shown, for example, the first straight line 122 is divided into four straight lines by three first portions 126. By dividing the first straight line 122 of the mask body 102 into multiple straight lines using the first portions 126, if damage to the mask body 102 occurs near the first boundary line 124 when using the vapor deposition mask 100, the damage can be confined within each of the divided straight sections. Furthermore, the first portions 126 can be used to suppress the expansion of the damage.

[0065] There is no particular limit to the number of the first part 126; it can be one first part 126, dividing the first straight line 122 into two straight sections. Alternatively, it can be set as follows: Figure 2 The three first portions 126 shown divide the first straight line 122 into more straight sections. Furthermore, in setting... Figure 2 In the case of multiple first portions 126 as illustrated, for example, multiple first portions 126 may be arranged consecutively. In this case, the consecutive first portions 126 may be appropriately shaped to form a lightning bolt shape or the like along the first boundary line 124.

[0066] One or more first portions 126 may divide the first straight line 122 at equal intervals. However, as long as the first portions 126 can suppress the expansion of the damage to the mask body 102 near the first boundary line 124 when using the vapor deposition mask 100, they may not be equally spaced, but rather arranged at arbitrary intervals. The first portions 126 may be discretely arranged along the holding frame 104, and the first straight line 122 may be discontinuously separated.

[0067] like Figure 2 As shown, the first portion 126 is an extension 130 extending inward from the first straight line 122 toward the mask body 102. The extension 130 is disposed between the first straight line 122 and the second region 110, and is spaced apart from the second region 110. In addition, the extension 130 overlaps with the third region 112.

[0068] Next, refer to Figure 3 The details of the first part 126 (protrusion 130) are explained. Figure 3 Indicates will Figure 2 The enlarged plan view of box 128, enclosed by the dotted line shown.

[0069] In the second straight line 142 passing through any point on the outline of the protrusion 130, the distance (length) L1 between the first boundary line 124 and the second region 110 is greater than the distance (length) L2 between the first boundary line 124 and any point on the protrusion 130. Here, Figure 3 In the diagram, any point is represented as vertex 132 of the protrusion 130.

[0070] Furthermore, the width of the connecting member 106 at the protrusion 130 is greater than the width of the connecting member 106 without the protrusion 130. Moreover, the width L4 of the connecting member 106 between the second boundary line 140 and the first boundary line 124 between the connecting member 106 and the retaining frame 104 is smaller than the width L3 of the connecting member 106 between the second boundary line 140 and the vertex 132 of the protrusion 130.

[0071] 3. Cross-sectional structure

[0072] Reference Figure 4 (A) and Figure 4 (B) describes the cross-sectional structure of the connecting member 106 with the protrusion 130 and the connecting member 106 without the protrusion 130, as well as their peripheral structures. Figure 4 (A) is along Figure 2 The cross-sectional view of the vapor deposition mask 100 obtained by cutting off the B1-B2 line is shown. Figure 4 (B) is along Figure 2The cross-sectional view of the vapor deposition mask 100 obtained by cutting the C1-C2 line is shown.

[0073] right Figure 4 (A) and Figure 4 The positional relationship between the vapor deposition mask 100 and the substrate to be vapor deposited, as shown in (B), will be explained. Figure 4 (A) and Figure 4 The vapor deposition mask 100 shown in (B) has a vapor deposition substrate positioned above the surface of the mask body 102 (in the z direction) during vapor deposition. The heated material is deposited on the vapor deposition substrate from below the surface (in the z direction) through the opening pattern 114 of the second region 110.

[0074] like Figure 4 (A) and Figure 4 As shown in (B), the mask body 102 is disposed on the connecting member 106. Therefore, the peripheral portion of the second surface of the mask body 102 has a contact surface that contacts the connecting member 106. This contact surface is as follows... Figure 4 (A) and Figure 4 As shown in (B), it extends partially into the inside of the mask body 102 to become the extension 130 of the connecting member 106.

[0075] Furthermore, the two ends of the mask body 102 are arranged side-by-side with the connecting member 106. The mask body 102 is held by the thickness-extending portion of the connecting member 106 and fixed by the overlapping and extending portions of the connecting member 106. The mask body 102 overlaps with the connecting member 106 in a first region 108 and with the protrusion 130 of the connecting member 106 in a third region 112. Therefore, as Figure 4 (A) and Figure 4 As shown in (B), when viewed in cross-section, the mask body 102, compared to Figure 4 The connecting component 106 shown in (B) is with Figure 4 The connecting member 106 with the protrusion 130 shown in (A) has a larger overlapping portion. Additionally, Figure 4 The width L3 of the connecting member 106 shown in (A) is greater than Figure 4 The width L4 of the connecting member 106 shown in (B) is 106.

[0076] exist Figure 4 (A) Figure 4 (B) and Figure 2The example given is that the protrusion 130 as the first portion 126 is provided only on one of the two short sides of the vapor deposition mask 100, but the protrusion 130 as the first portion 126 can also be provided on both short sides. Furthermore, the first portion 126 can be provided on the long side of the vapor deposition mask 100, or it can be provided on all sides of the vapor deposition mask 100. However, since most damage to the mask body 102 occurs on the short sides, it is preferable to provide the first portion 126 on at least one short side.

[0077] The retaining frames 104 are arranged side-by-side to clamp both ends of the connecting member 106. By configuring the retaining frames 104 in this way, the connecting member 106 is fixed to the retaining frames 104. Figure 4 (A) and Figure 4 In (B), for convenience, the width of the retaining frame 104 in the x direction is expressed as being smaller than the width of the connecting member 106, but preferably the width of the retaining frame 104 is greater than the width of the connecting member 106.

[0078] 4. Variations

[0079] 4-1. Mask peripheral structure

[0080] Next, refer to Figure 5 , Figure 6A and Figure 6B The following explains the variations of section 126 in the first part. (and) Figures 2-3 The difference in the first portion 126 shown is that the first portion 126 is an opening formed on the mask body 102. Furthermore, regarding... Figures 2-3 The vapor deposition mask 100 shown has the same or similar components, and sometimes the description is omitted.

[0081] Figure 5 Indicates will Figure 1 The diagram shows an enlarged plan view of the box 116 enclosed by the dotted line. The mask body 102 has an opening 144 on a first straight line 122 that overlaps with the first boundary line 124. Furthermore, the opening 144 is arranged across the first region 108 and the third region 112. The opening 144 partially overlaps with the connecting member 106. The mask body 102 may have multiple openings 144, preferably a large number of openings 144. However, it is preferably limited to a number that will not cause damage to the mask body 102 along the first boundary line 124 or the first straight line 122. Therefore, the multiple openings 144 are preferably spaced apart from each other at a certain distance and cannot be arranged continuously.

[0082] Next, refer to Figure 6A and Figure 6B The details of the first part 126 (opening 144) are explained. Figure 6A and Figure 6B Indicates will Figure 5 The enlarged plan view of box 146, enclosed by the dotted line shown.

[0083] Figure 6A and Figure 5 Similarly, the mask body 102 is positioned on the side opposite to the surface of the substrate to be vapor-deposited. The openings 144 are spaced apart from the second region 110. Just as multiple openings 144 cannot be arranged consecutively, by spaced apart from the opening pattern 114 disposed in the second region 110, damage to the mask body 102 can be avoided, maintaining its strength. Furthermore, when the openings 144 are positioned close to the second region 110 at a distance less than a certain amount, heated material will deposit onto the substrate through the openings 144; therefore, it is preferable to position them at a distance greater than a certain amount.

[0084] Figure 6B The mask body 102 is positioned on the surface of the substrate to be vapor-deposited. The opening 144 is configured to overlap with the connecting member 106, therefore, a portion of the connecting member 106 is disposed within the opening 144. Thus, as... Figure 6B As shown, in top view, the connecting members 106 are configured to clamp the mask body 102. Specifically, a first region 108 of the mask body 102 is disposed between the connecting members 106. Figure 6A and Figure 6B In the configuration, half of the opening 144 overlaps with the connecting member 106, but it is sufficient that the opening 144 partially overlaps with the connecting member 106. However, since the opening 144 corresponds to the non-vaporized area in the vapor-deposited substrate, it is preferable that the area of ​​the portion of the opening 144 that overlaps with the connecting member 106 is larger than the area of ​​the portion that does not overlap.

[0085] The size of the opening 144 is smaller than the size of the opening pattern 114 in the second region 110. Specifically, the area of ​​the opening 144 is larger than the area of ​​the opening pattern 114. In the mask body 102, the size of the opening 144 on the surface where the substrate to be deposited is disposed is larger than the size of the opening 144 on the opposite side. Furthermore, the shape of the opening 144 may differ from the shape of the opening pattern 114, and a circular shape is preferred. When the opening pattern 114 has a circular shape, the shape change of the mask body 102 due to bending and stretching is less, and the strength of the mask body 102 can be maintained, which is therefore preferable.

[0086] 4-2. Cross-sectional structure

[0087] Reference Figure 7A and Figure 7BThe cross-sectional structure of the vapor deposition mask 100, which includes a mask body 102 with an opening 144 and a mask body 102 without an opening 144, will be described. Figure 7B It is along Figure 5 The cross-sectional view of the vapor deposition mask 100 obtained by cutting off the C1-C2 line is shown. Figure 7A It is along Figure 5 The cross-sectional view of the vapor deposition mask 100 obtained by cutting along line D1-D2 is shown. Furthermore, for... Figure 4 The vapor deposition mask 100 shown has the same or similar components, and sometimes the description is omitted.

[0088] The opening 144 penetrates the mask body 102 and has sidewalls. The opening 144 has a columnar shape, preferably a cylindrical shape. Alternatively, the opening 144 is preferably a straight cylinder, but it may also have tapered sidewalls.

[0089] As described above, the vapor deposition mask 100 has a first boundary line 124 at the boundary between the thin-film mask body 102 and the connecting member 106, and the mask body 102 has a first straight line 122 that overlaps with the first boundary line 124. The mask body 102 or the connecting member 106 has a first portion 126 that divides the first straight line 122 of the mask body 102 into multiple straight sections. By separating the first straight line 122 of the mask body 102 by the first portion 126, the expansion of the area of ​​damage to the mask body 102 that mainly occurs on the first straight line 122 can be suppressed. This suppression can prevent the expansion of vapor deposition unevenness in the substrate being vapor-deposited, thereby improving the yield of the vapor-deposited substrate.

[0090] <Second Implementation>

[0091] Reference Figures 8A to 17 A method for manufacturing a vapor deposition mask 100 according to one embodiment of the present invention will be described.

[0092] Figures 8A to 17 This is a cross-sectional view illustrating a method for manufacturing a vapor deposition mask 100 according to one embodiment of the present invention. Additionally, Figure 17 The cross-sectional view shown is along Figure 1 The cross-sectional view of the vapor deposition mask 100 obtained by cutting off the A1-A2 line is shown.

[0093] Figure 8AThis indicates the stage in which the first resist mask 150 is formed on the first surface of the first support substrate 148. The first support substrate 148 is made of metal and is formed from insulating materials such as glass, quartz, ceramic, and plastic, or metals such as copper (Cu), aluminum (Al), titanium (Ti), iron (Fe), nickel (Ni), cobalt (Co), chromium (Cr), molybdenum (Mo), and manganese (Mn), or alloys thereof. As an alloy, it may be, for example, an alloy containing iron (Fe) and chromium (Cr), or an alloy of iron (Fe), nickel (Ni), and manganese (Mn), and the alloy may contain carbon (C). For example, the first support substrate 148 may be formed from stainless steel, with iron (Fe) as the main component and containing chromium (Cr) and nickel (Ni).

[0094] The first photoresist mask 150 is formed using a photosensitive resin material via photolithography. As the photosensitive resin material, a coating-type photoresist or a dry film resist (DFR) can be used. The first photoresist mask 150 is formed when... Figure 1 When multiple mask bodies 102 are arranged in the vapor deposition mask 100 shown, it has a frame-like shape that surrounds them (all of the multiple mask bodies 102).

[0095] Figure 8B This indicates the stage of forming the release layer 152. The release layer 152 is formed in the area exposed from the frame-shaped first resist mask 150 on the first surface of the first support substrate 148 on which the first resist mask 150 is formed. The release layer 152 is formed, for example, of the same metal material as the metal material forming the mask body 102. The release layer 152 is formed, for example, of a metal material with zero valence such as nickel (Ni), copper (Cu), titanium (Ti), or chromium (Cr). The release layer 152 formed from such a metal material can be fabricated by a plating method. For example, the release layer 152 can be fabricated by plating nickel onto the first support substrate 148. When the release layer 152 is formed by plating, the first support substrate 148 can be cleaned and a release agent can be applied to the first surface.

[0096] Figure 8CThis indicates the stage of removing the first photoresist mask 150. The first photoresist mask 150 can be removed using a stripping solution. An opening 154 is formed in the area where the first photoresist mask 150 has been removed. In other words, by removing the first photoresist mask 150 from the first support substrate 148, the release layer 152 is separated into an inner region 156 and an outer region 158 via the opening 154. The release layer 152 is formed with a thickness of 20 μm to 200 μm, for example, 40 μm to 150 μm. The release layer 152 can be formed on the first support substrate 148 using a plating method, a sputtering method, or a chemical vapor deposition (CVD) method. The release layer 152 formed on the first support substrate 148 may have a reduced uniformity in film thickness at the outer periphery. Even in such cases, by providing the first photoresist mask 150 on the first support substrate 148 beforehand, the release layer 152 can be separated into an inner region and an outer region.

[0097] Figure 9A This indicates the stage of applying the adhesive layer 162 to the release layer 152. The adhesive layer 162 is preferably a resist film having a specified adhesive or bonding strength in its unexposed state. For example, a dry film resist can be used as such a resist film. The adhesive layer 162 preferably has a size that covers the entire surface of the inner region 156 of the release layer 152 and extends to the outer side of the release layer 152. The ends of the adhesive layer 162 may extend to the outer region 158 of the release layer 152. The release layer 152, supplied as a thin film component, has such a size that it can reliably cover the inner region of the release layer 152.

[0098] It is possible Figure 9B As shown, a process is performed to prevent the outer periphery of the adhesive layer 162 from being exposed, while exposing the inner region 156. Specifically, in the adhesive layer 162, the outer periphery 166, which includes a region overlapping the end of the release layer 152, is designated as a non-exposed region, while the region inside the outer periphery 166 becomes an exposed region, and a process is performed to cure the exposed surface. The outer region 158 (the region to be exposed) preferably overlaps at least partially with the release layer 152. Selective exposure of the adhesive layer 162 can be performed using a photomask. When the photosensitive dry film resist used as the adhesive layer 162 is positive, a first photomask 164 with a light-shielding portion 168 formed around the light-transmitting portion 160 can be used.

[0099] Figure 10A This indicates the stage in which the adhesive layer 162 is tightly bonded to the first surface of the second support substrate 170, and the release layer 152 is bonded together with the first support substrate 148. For example... Figure 10AAs shown, the second support substrate 170 is tightly bonded to the adhesive layer 162, thereby fixing the second support substrate 170 onto the adhesive layer 162. After this bonding, they can be baked. For example, the baking conditions in this case can be 60°C for 1 hour.

[0100] Figure 10B This indicates the stage of peeling the release layer 152 from the first support substrate 148. The release layer 152 can be peeled from the first support substrate 148 by applying a physical force to the interface between the release layer 152 and the first support substrate 148. For example, a jig with a sharp tip can be pressed against the interface between the first support substrate 148 and the release layer 152 to form a trigger portion for peeling, and then an external force can be applied to peel off the first support substrate 148, thereby peeling the release layer 152 from the first support substrate 148.

[0101] Alternatively, after the release layer 152 is peeled off from the first support substrate 148, the release layer 152 remaining on the second support substrate 170 can be treated with a chemical solution. Specifically, treatment (development) can be performed using a photoresist developer; not only can a developer be used, but an alkaline solution can also be used. Alternatively, the release layer 152 remaining on the second support substrate 170 can be exposed.

[0102] Figure 11A This describes the stage of forming a second photoresist mask 176 on a second support substrate 170 where a release layer 152 is provided. The second photoresist mask 176 is formed with a predetermined pattern. That is, it is selectively formed in areas where multiple opening patterns 114 or dummy pattern portions 178 are to be formed. For example, a negative photoresist is applied to the release layer 152, and exposure is performed through a photomask so that the areas where multiple opening patterns 114 and dummy pattern portions 178 are to be formed are selectively exposed. Alternatively, a positive photoresist is applied to the release layer 152, and exposure is performed through a photomask so that non-opening portions are selectively exposed. Then, by development, the patterned second photoresist mask 176 can be obtained.

[0103] Figure 11BThis indicates the stage of forming the mask body 102 by forming a plating pattern in an area not covered by the second resist mask 176 using a plating method. The formation of the plating pattern can be performed in one stage or in multiple stages. In the case of multiple stages, plating can be performed by forming different metals in different stages. Furthermore, plating can be performed such that the upper surface of the plating pattern is lower than the upper surface of the second resist mask 176, or it can be performed such that the upper surface of the plating pattern is higher than the upper surface of the second resist mask 176. In the latter case, the upper surface of the plating pattern can be planarized by grinding the surface. Thereafter, as... Figure 11C As shown, by removing the second resist mask 176 using a stripping solution through etching and / or ashing, a mask body 102 can be fabricated on the stripping layer 152 to form a vapor deposition pattern using multiple opening patterns 114.

[0104] In addition, such as Figure 11B and Figure 11C As shown, when forming the mask body 102, dummy pattern portions 178 are formed at intervals from the mask body 102. The dummy pattern portions 178 are configured to surround multiple mask bodies 102 when viewed from above. The dummy pattern portions 178 are formed simultaneously with the mask bodies 102, therefore, they can have the same composition and thickness.

[0105] Figure 12A This describes one method of using a protective film 180 to protect the opening pattern 114 of the mask body 102. A dry film resist can be used as the protective film 180. The protective film 180, for example, has a structure in which a photocurable resin film 182 is sandwiched between a release film 184 and a protective film 186. The photocurable resin film 182 contains a negative photocurable resin, that is, it contains a polymer or oligomer that can be cured by light. The thickness of the photocurable resin film 182 can be arbitrarily selected, for example, from a range of 20 μm to 500 μm, 50 μm to 200 μm, or 50 μm to 120 μm. The protective film 186 contains a polymer material. As the polymer material, it can be selected from, for example, polyolefins, polyimides, polyesters, polystyrene, or fluorinated polyolefins.

[0106] Figure 12B This indicates that a protective film 180 is disposed on the mask body 102. The protective film 180 is disposed such that, after the release film 184 is peeled off, the photocurable resin film 182 is sandwiched between the mask body 102 and the protective film 186. The protective film 180 is provided such that it at least covers the entire opening pattern 114.

[0107] Next, the photocurable resin film 182 is exposed. Specifically, as follows: Figure 13As shown, a second photomask 188 having a light-shielding portion 168 and a light-transmitting portion 160 is arranged such that the light-transmitting portion 160 overlaps with the opening pattern 114, but the light-shielding portion 168 does not overlap with the opening pattern 114, and exposure is performed through the second photomask 188. As a result, the solubility of the exposed portion relative to the developer is reduced.

[0108] Figure 14A This indicates that after exposure of the photocurable resin film 182, the protective film 186 is peeled off and developed, resulting in a third resist mask 192 formed on the opening pattern 114. When multiple opening patterns 114 are formed on the release layer 152, a third resist mask 192 is provided for each opening pattern 114 as shown in the figure. Furthermore, since a holding frame 104 will be formed on the dummy pattern portion 178 in a later process, the third resist mask 192 may not be required.

[0109] Figure 14B This indicates the stage of arranging the holding frame 104 on the dummy pattern section 178. The holding frame 104 is arranged between each vapor-deposited pattern when forming multiple opening patterns 114. The holding frame 104 may have a pattern with a wide outer outline and a pattern formed inside the pattern with a narrow outer outline (the pattern formed between the opening patterns 114).

[0110] Figure 15 This indicates the stage where the retaining frame 104 and the dummy pattern portion 178 are pressed together using a vacuum pressing method. For example... Figure 15 As shown, a thin film 190 is disposed above the retaining frame 104, covering the second support substrate 170, adhesive layer 162, release layer 152, opening pattern 114, mask body 102, dummy pattern portion 178, and retaining frame 104. Next, air is vented (vacuum venting) between the second support substrate 170 and the thin film 190, reducing the pressure on the lower side of the thin film 190. Utilizing the pressure difference between the upper and lower sides of the thin film 190, the thin film 190 is pulled towards the second support substrate 170. When the pressure on the lower side of the thin film 190 is further reduced, the thin film 190 presses against the retaining frame 104. The retaining frame 104, subjected to the pressure from the thin film 190, adheres more firmly to the dummy pattern portion 178.

[0111] The vacuum level on the lower side of the thin film 190, under a gauge pressure of 0 kPa at atmospheric pressure, is -50 kPa or less, preferably -70 kPa or less, and more preferably -90 kPa or less.

[0112] After vacuum pressing, the film 190 is removed.

[0113] Figure 16AThis indicates the stage of forming the connecting component 106 using a plating method. The connecting component 106 mainly grows from the portion of the surface of the mask body 102 that is not covered by the retaining frame 104 and the third resist mask 192. As a result, as... Figure 16A As shown, a connecting member 106 is formed that contacts the upper surface of the mask body 102 and the side surface of the retaining frame 104. The mask body 102 and the retaining frame 104 are fixed by the connecting member 106.

[0114] The connecting member 106 may be formed so that its thickness is the same as the thickness of the third resist mask 192. Alternatively, the connecting member 106 may also be formed so that its thickness is less than the thickness of the third resist mask 192, or as follows: Figure 16A As shown, it is formed such that its thickness is greater than the thickness of the third resist mask 192.

[0115] The third resist mask 192 was stripped using a stripping solution, as follows: Figure 16B As shown, a vapor deposition mask 100 can be formed on the second support substrate 170. Subsequently, by peeling the release layer 152 from the second support substrate 170 and further peeling the release layer 152 from the mask body 102, a vapor deposition mask 100 can be obtained. Figure 17 The vapor deposition mask 100 shown.

[0116] As described above, it is possible to fabricate vapor deposition mask 100.

[0117] Even if other effects are different from those brought about by the technical solutions of the above embodiments, as long as they are effects known from the description in this specification, or effects that can be easily predicted by those skilled in the art from the description in this specification, they can of course be understood as effects brought about by the present invention.

Claims

1. A vapor deposition mask, characterized in that, have: A thin-film mask body; The retaining frame surrounding the mask body; and The connecting component located between the mask body and the retaining frame. The mask body has: a first region overlapping with the connecting component; and a second region surrounded by the first region that overlaps with the vapor deposition area of ​​the vapor deposition substrate of the object to be vapor deposition during vapor deposition. and a third region located between the first region and the second region. The connecting member has an extension that divides a first straight line into multiple straight sections. The first straight line is a straight line that connects a first point on a first boundary line between the first region and the third region and a second point on the first boundary line between the first region and the third region that is far from the first point.

2. The vapor deposition mask according to claim 1, characterized in that: The protrusion extends inward relative to the first boundary line toward the inside of the mask body.

3. The vapor deposition mask according to claim 1, characterized in that: The protrusion overlaps with the third region.

4. The vapor deposition mask according to claim 1, characterized in that: The distance L1 between the first boundary line and the second region is greater than the distance L2 between the protrusion and the second region.

5. The vapor deposition mask according to claim 1, characterized in that: The connecting component has a plurality of the protrusions.

6. The vapor deposition mask according to claim 1, characterized in that: The connecting component has a short side and a long side. The protrusion is disposed on the short side.

7. A vapor deposition mask, characterized in that, have: A thin-film mask body; The retaining frame surrounding the mask body; and The connecting component located between the mask body and the retaining frame. The mask body has: a first region overlapping with the connecting component; and a second region surrounded by the first region that overlaps with the vapor deposition area of ​​the vapor deposition substrate of the object to be vapor deposition during vapor deposition. and a third region located between the first region and the second region. The mask body has a first opening that divides a first straight line into multiple straight sections. The first straight line is a straight line connecting a first point on the first boundary line between the first region and the third region and a second point on the first boundary line between the first region and the third region that is far from the first point.

8. The vapor deposition mask according to claim 7, characterized in that: The second region has a second opening. The first opening is larger than the second opening.

9. The vapor deposition mask according to claim 7, characterized in that: The first opening overlaps with at least the first region or the third region.

10. The vapor deposition mask according to claim 7, characterized in that: The mask body has a first surface that contacts the connecting component and a second surface opposite to the first surface. On the second side, the connecting member is located within the first opening.

11. The vapor deposition mask according to claim 7, characterized in that: The mask body has multiple of the first openings.

12. The vapor deposition mask according to claim 7, characterized in that: The mask body has a short side and a long side at its boundary with the connecting component. The first opening is located on the short side.

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