Electrostatic discharge protection structure, crystal grain, chip and electronic device

Abstract

The present application provides an electrostatic release protection structure, a crystal grain, a chip and an electronic device, and relates to the field of chips. The electrostatic release protection structure includes a protection circuit; the protection circuit is in a cut-off state when the protected circuit is in a normal working state; the protection circuit is in a conducting state when the protected circuit is in a state of electrostatic release, so as to discharge the charge released by the electrostatic discharge of the protected circuit; wherein the protection circuit has an amplification characteristic, and the amplification characteristic is a characteristic of amplifying the current formed by the electrostatic release charge. Since the protection circuit has an amplification characteristic, the discharge capacity of the electrostatic release structure circuit to the charge / current can be amplified. Thus, the amplification characteristic can improve the discharge capacity of the protection circuit to the charge / current under the same size area, thereby improving the protection capacity of the electrostatic release protection structure to the electrostatic release. Through the electrostatic release protection structure, the charge / current can be quickly discharged to ensure the application safety of the chip.

Description

Technical Field

[0001] The present application relates to the field of chips, and more specifically, to an electrostatic discharge protection structure, a crystal grain, a chip and an electronic device. Background Art

[0002] ESD (Electro-Static discharge) affects the performance, lifespan and manufacturing of chips, so chips need to be protected against electrostatic discharge. As the integration of devices increases and the process size decreases, the voltage resistance of the devices decreases, and the requirements for electrostatic discharge protection of the devices also increase.

[0003] At present, electrostatic discharge protection circuits usually use diode protection circuits to discharge electrostatic discharge charges. However, the current diode protection circuits have low efficiency in electrostatic discharge and have problems such as large area, poor protection effect, and parasitic capacitance limiting the working speed of chip IO (Input / Output). It is difficult to simultaneously meet the needs of high-speed IO electrostatic discharge protection and high-speed operation. Summary of the invention

[0004] In view of this, the present application aims to provide an electrostatic discharge protection structure, a crystal grain, a chip and an electronic device to improve the protection capability against electrostatic discharge.

[0005] In a first aspect, the present application provides an electrostatic release protection structure, comprising: a protection circuit connected to a charge release end of a protected circuit; the protection circuit is in a cut-off state when the protected circuit is in a normal working state; the protection circuit is in a conductive state when electrostatic release occurs in the protected circuit, so as to discharge the charge released by the electrostatic discharge of the protected circuit; wherein the protection circuit has an amplification characteristic, and the amplification characteristic is a characteristic of amplifying the current formed by the electrostatic release charge.

[0006] In the embodiment of the present application, the protection circuit can be connected to the charge release end of the protected circuit, and the protection circuit is in a cut-off state when the protected circuit is in normal working state, so that the protected circuit can work normally. The protection circuit is in a conducting state when the protected circuit is in a state of electrostatic discharge, so as to discharge the charge released by the electrostatic of the protected circuit, thereby realizing protection against electrostatic discharge. In the case of the same circuit area, since the protection circuit has an amplification characteristic, the current formed by the electrostatic discharge charge can be amplified, so that the current flowing through the protection circuit per unit time increases, thereby increasing the discharge capacity of the electrostatic release structure circuit for charge / current, thereby improving the discharge efficiency of the protection circuit for charge and / or current, and improving the protection capacity against electrostatic discharge. Through the electrostatic release protection structure, the charge / current can be quickly discharged to ensure the application safety of the chip.

[0007] In one embodiment, the protection circuit includes a power supply terminal, a ground terminal, a first amplifier circuit and a second amplifier circuit; the power supply terminal is used to connect to a power supply; the input terminal of the first amplifier circuit is connected to the output terminal of the second amplifier circuit; the charge release terminal is connected between the input terminal of the first amplifier circuit and the output terminal of the second amplifier circuit; the output terminal of the first amplifier circuit is the power supply terminal; and the input terminal of the second amplifier circuit is the ground terminal.

[0008] In an embodiment of the present application, the electrostatically released charges can be discharged through the power supply terminal and the ground terminal, and the input terminal of the first amplifier circuit is connected to the output terminal of the second amplifier circuit, so that the current formed by the electrostatically released charges can be amplified by the first amplifier circuit or the second amplifier circuit first, so that more charges and / or currents can be discharged at the same time, thereby improving the discharge efficiency of charges and / or currents, thereby improving the electrostatic release protection structure and the protection capability against electrostatic release.

[0009] In one embodiment, the first amplifier circuit includes a first P-type diode and a second P-type diode; the anode of the first P-type diode is connected to the output end of the second amplifier circuit; the cathode of the first P-type diode is the power supply end; the anode and cathode of the second P-type diode are simultaneously connected to the cathode of the first P-type diode.

[0010] The diode has the characteristic of unidirectional conduction. The use of the first P-type diode and the second P-type diode can make the protection circuit in the cut-off state when the protected circuit is in normal working state, and in the state of electrostatic discharge of the protected circuit. In the embodiment of the present application, the positive and negative electrodes of the second P-type diode are connected to the negative electrode of the first P-type diode at the same time, thereby making the first P-type diode and the second P-type diode equivalent to a PNP triode, and the triode has an amplification feature, thereby improving the protection ability against electrostatic discharge. Compared with other types of amplifier devices, the area of ​​the two diodes in the chip is smaller. Therefore, for the same electrostatic discharge protection ability, the two diodes occupy a smaller chip area, and the electrostatic discharge protection structure is improved by occupying a smaller chip area. The discharge ability of electrostatic charge / current ensures the application safety of the chip. The larger the chip area occupied by the protection circuit, the larger the parasitic capacitance generated. The parasitic capacitance will affect the working speed of the protected circuit. Therefore, compared with the triode, the use of two diodes can also make the protected circuit have a higher working speed.

[0011] In one embodiment, the second amplifier circuit includes a first N-type diode and a second N-type diode; the anode of the first N-type diode is the ground terminal; the cathode of the first N-type diode is connected to the input terminal of the first amplifier circuit; the anode and cathode of the second N-type diode are simultaneously connected to the anode of the first N-type diode.

[0012] The diode has the characteristic of unidirectional conduction. The use of the first N-type diode and the second N-type diode can make the protection circuit in the cut-off state when the protected circuit is in normal working state, and in the on state when the protected circuit is in the state of electrostatic discharge. In the embodiment of the present application, the positive and negative electrodes of the second N-type diode are simultaneously connected to the positive electrode of the first N-type diode, thereby making the first P-type diode and the second P-type diode equivalent to NPN triodes, and the triode has an amplification feature, thereby improving the protection capability against electrostatic discharge. Compared with other types of amplifier devices, the two diodes occupy a smaller area in the chip, and thus, for the same electrostatic discharge protection capability, the two diodes occupy a smaller chip area. The protection circuit occupies the chip area to generate parasitic capacitance, which affects the operating speed of the protected circuit. Therefore, compared with the triode, the use of two diodes can also make the protected circuit have a higher operating speed.

[0013] In one embodiment, the first amplifier circuit includes a first PMOS and a second PMOS; the source of the first PMOS is a power supply terminal; the gate and drain of the first PMOS are connected to the output terminal of the second amplifier circuit; and the three poles of the second PMOS are all connected to the source of the first PMOS.

[0014] MOS tubes have the characteristics of parasitic diodes. In the embodiment of the present application, two PMOS tubes are connected in the above manner, so that the two PMOS tubes are equivalent to PNP transistors, thereby having amplification characteristics similar to those of transistors, thereby improving the protection level against electrostatic discharge.

[0015] In one embodiment, the second amplifier circuit includes a first NMOS tube and a second NMOS; the source of the first NMOS is grounded; the gate and drain of the first NMOS are connected to the input of the first amplifier circuit; and the three electrodes of the second NMOS are all connected to the source of the first NMOS.

[0016] MOS tubes have the characteristics of parasitic diodes. In the embodiment of the present application, two NMOS tubes are connected in the above manner, so that the two PMOS tubes are equivalent to PNP transistors, which have amplification characteristics similar to those of transistors, thereby improving the protection level against electrostatic discharge.

[0017] In one embodiment, the first amplifying circuit includes a PNP transistor, and an emitter and a base of the PNP transistor are the power supply terminals.

[0018] In the embodiment of the present application, the PNP transistor has an amplification characteristic and can amplify the current flowing through the PNP transistor, thereby improving the efficiency of discharging the charge released by electrostatic discharge, thereby improving the protection capability against electrostatic discharge.

[0019] In one embodiment, the second amplifying circuit includes an NPN transistor; the emitter and the base of the NPN transistor are the ground terminals.

[0020] In the embodiment of the present application, the NPN transistor has an amplification characteristic and can amplify the current flowing through the NPN transistor, thereby improving the efficiency of discharging the charge released by electrostatic discharge, thereby improving the protection capability against electrostatic discharge.

[0021] In one embodiment, the electrostatic discharge protection structure includes a plurality of protection circuits; different protection circuits are respectively connected to different charge release ends of the protected circuit.

[0022] In an embodiment of the present application, a plurality of protection circuits are provided and respectively connected to different output terminals of the protected circuit. Thus, the electrostatic release protection structure can protect different ports of the protected circuit that may generate electrostatic release, thereby improving the protection capability against electrostatic release.

[0023] In one embodiment, the electrostatic release protection structure includes a plurality of protection circuits, and the protection circuits are interconnected; at least one protection circuit is connected to a charge release terminal of the protected circuit.

[0024] In an embodiment of the present application, the protection circuits are interconnected, so that the charge generated by the electrostatic release at the same charge release end of the protected circuit will be discharged through multiple protection circuits, thereby making the electrostatic release charge discharge more complete, thereby improving the protection capability of electrostatic release.

[0025] In one embodiment, the electrostatic discharge protection structure includes a plurality of protection circuits, and at least some of the protection circuits belong to different types of electrostatic discharge models.

[0026] In the embodiments of the present application, protection circuits corresponding to different types of electrostatic release models are used, whereby the electrostatic release protection structure can protect against electrostatic release caused by different reasons, thereby improving the protection capability of the electrostatic release protection structure.

[0027] In one embodiment, the protection circuit includes: a human body model electrostatic discharge protection circuit, and / or a charging device model electrostatic discharge protection circuit.

[0028] In an embodiment of the present application, the protection circuit includes a human body model electrostatic release protection circuit and / or a charging device model electrostatic release protection circuit. Thus, the protection circuit can protect against electrostatic release from the human body and / or electrostatic release generated by interaction between devices, thereby reducing the probability of damage to the protected circuit caused by electrostatic release from the human body and / or electrostatic release from interaction between devices.

[0029] In a second aspect, an embodiment of the present application provides a die, wherein the die includes an electrostatic release protection structure as described in any one of the first aspects.

[0030] In a third aspect, an embodiment of the present application provides a chip, the chip comprising the die as described in the second aspect.

[0031] In a fourth aspect, an embodiment of the present application provides an electronic device, wherein the electronic device includes the chip as described in the third aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0033] Figure 1 A schematic diagram of an electrostatic discharge protection structure provided in an embodiment of the present application;

[0034] Figure 2 A schematic diagram of a protection circuit provided in an embodiment of the present application;

[0035] Figure 3 An equivalent schematic diagram of a first amplifier circuit provided in an embodiment of the present application;

[0036] Figure 4 An equivalent schematic diagram of a second amplifier circuit provided in an embodiment of the present application;

[0037] Figure 5 A schematic cross-sectional equivalent diagram of a protection circuit provided in one embodiment of the present application;

[0038] Figure 6 A schematic diagram of the connection between multiple protection circuits and different ports provided in an embodiment of the present application;

[0039] Figure 7 A schematic diagram of multiple protection circuits connected to each other for an implementation of the present application;

[0040] Figure 8 A circuit connection diagram of an electrostatic discharge protection structure provided for one embodiment of the present application.

[0041] Icons: protection circuit 100; first amplifier circuit 110; second amplifier circuit 120. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical solution and advantages of the embodiments of the present application more clear, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present application and are not used to limit the present application.

[0043] The present application provides an electrostatic discharge protection structure. Figure 1 , Figure 1 A schematic diagram of an electrostatic discharge protection structure provided in an embodiment of the present application.

[0044] In some embodiments of the present application, the electrostatic discharge protection structure can be a separate crystal grain, and the protected circuit is a crystal grain that realizes other functions. The electrostatic discharge protection structure and the protected circuit are connected through metal wires between the crystal grains and packaged as the same chip. In some embodiments, the electrostatic discharge protection structure and the protected circuit are still in the same crystal grain, and the crystal grain can be packaged as a chip. In some embodiments, the electrostatic discharge protection structure and the protected circuit can also be chips after different packages, etc., and the present application does not limit the specific implementation form of the electrostatic discharge protection structure.

[0045] In an embodiment of the present application, the electrostatic discharge protection structure includes a protection circuit 100 .

[0046] The protection circuit 100 is connected to the charge release terminal of the protected circuit, and is in the off state when the protected circuit is in normal working state. The protection circuit 100 is in the on state when the protected circuit is in the state of electrostatic discharge, so as to discharge the charge released by the electrostatic of the protected circuit. The flow of charge will form current, and the discharge of charge can also be regarded as the discharge of current.

[0047] It can be understood that electrostatic discharge is caused by the accumulation of a large amount of charge on an object. When the object comes into contact with other objects with less charge, the charge will be transferred from the place where the charge is more concentrated to the place where the charge is less, thereby generating a large current to damage other objects. Therefore, electrostatic discharge may occur from the protected circuit or from an external circuit connected to the protected circuit. In this embodiment, the electrostatic discharge protection structure can be connected to the charge release end of the protected circuit and connected between the protected circuit and.

[0048] In this embodiment, the protection circuit 100 may include a switching device, such as a diode, a MOS tube, a triode, a photoelectric amplifier, etc., so that the protection circuit 100 can be in a cut-off state or a conducting state under different circumstances.

[0049] In this embodiment, the protection circuit 100 is used to connect to the ports of the protected circuit where electrostatic discharge may occur, for example, the signal ports of the protected circuit. When the protected circuit is working normally, the circuits at the ports cannot turn on the protection circuit 100, and the protection circuit 100 is in the off state. When electrostatic discharge occurs in the protected circuit, the electrostatic discharge generates charge movement, which is released through the ports. The movement of the charge generates a large current, thereby turning on the protection circuit 100, and the charge is released to the protected circuit and the outside of the protection circuit 100 through the protection circuit 100, thereby realizing electrostatic discharge protection.

[0050] The protection circuit 100 may have an amplification characteristic, which is a characteristic of amplifying a current formed by electrostatic discharge charges.

[0051] In this embodiment, the amplification characteristic can amplify the current. After the current is amplified, the current flowing through the protection circuit 100 per unit time can be increased, thereby increasing the charge discharge capability of the protection circuit 100, and achieving a stronger electrostatic protection effect under the same area. Accordingly, since there is no need to increase additional area, the limitation of the larger area on the working speed can be reduced, and the circuit can achieve a higher working speed under the same area, thereby simultaneously meeting the protection capability against electrostatic release and the high-speed working requirements of IO.

[0052] In this embodiment, the amplification characteristic of the protection circuit 100 may be generated by a device with amplification characteristics in the protection circuit 100. For example, the protection circuit 100 may include a bipolar junction transistor, a field effect transistor, a phototransistor, etc.

[0053] In some embodiments, the devices in the protection circuit 100 may be connected to form a circuit with amplification characteristics. For example, two diodes of the same type may be connected so that the connected circuit has amplification characteristics similar to a bipolar junction transistor. Similarly, by utilizing the parasitic diode characteristics of a field effect transistor, connecting multiple field effect transistors can also make the protection circuit 100 have amplification characteristics. The above is only an example and should not be regarded as a limitation to the present application.

[0054] In one embodiment, the protection circuit 100 includes a power supply terminal, a ground terminal, a first amplifier circuit 110 and a second amplifier circuit 120; the power supply terminal is used to connect to the power supply; the input terminal of the first amplifier circuit 110 is connected to the output terminal of the second amplifier circuit 120; the charge release terminal is connected between the input terminal of the first amplifier circuit and the output terminal of the second amplifier circuit; the output terminal of the first amplifier circuit 110 is the power supply terminal; and the input terminal of the second amplifier circuit 120 is the ground terminal.

[0055] See also Figure 2 , Figure 2The schematic diagram of the protection circuit 100 provided in one embodiment of the present application, Pad is a port for connecting the protected circuit to the external circuit, VDD is a power supply terminal, VSS is a ground terminal, and the input terminal of the first amplifier circuit and the output terminal of the second amplifier circuit are terminals connected to Pad. It can be understood that the electrostatic discharge protection structure is connected between the protected circuit and Pad, and the charge released by electrostatic discharge will flow out from Pad or from the charge release terminal of the protected circuit, and after passing through the first amplifier circuit 110 or the second amplifier circuit 120, the charge will be discharged through VDD or through VSS.

[0056] In this embodiment, the input end of the first amplifier circuit 110 and the output end of the second amplifier circuit 120 are respectively used to connect to the port for electrostatic release of the protected circuit. Therefore, when electrostatic release occurs in the protected circuit, the electrostatically released charge flows to the first amplifier circuit 110 and the second amplifier circuit 120 through the port connected to the protected circuit and the electrostatic release protection structure, so as to be released through the power supply end and the grounding end of the electrostatic release protection structure. For example, the flow direction of negative charge is opposite to the direction of current, and the flow direction of positive charge is the same as the direction of current. Negative charge flows out from the grounding end through the second amplifier circuit 120, and positive charge flows out from the power supply end through the first amplifier circuit 110, thereby achieving the purpose of electrostatic release.

[0057] In one embodiment, the first amplifier circuit 110 includes a first P-type diode and a second P-type diode; the anode of the first P-type diode is connected to the output end of the second amplifier circuit 120; the cathode of the first P-type diode is a power supply end; the anode and cathode of the second P-type diode are simultaneously connected to the cathode of the first P-type diode.

[0058] See also Figure 3 , Figure 3 FIG. 1 is an equivalent schematic diagram of the first amplifier circuit 110 in an embodiment of the present application. Figure 3 In the figure, DP1 is the first P-type diode, DP1' is the second P-type diode, VDD is the power supply terminal, Figure 3 The left figure is a schematic diagram of the first amplifier circuit 110. Figure 3 The right figure is an equivalent schematic diagram of the first amplifier circuit 110. It can be understood that the triode is also called a bipolar junction transistor, which includes two PN junctions. Therefore, the positive electrode and the negative electrode of the second P-type diode can be connected to the negative electrode of the first P-type diode at the same time, so that the two P-type diodes can be equivalent to a PNP triode to achieve current amplification.

[0059] In one embodiment, the second amplifier circuit 120 includes a first N-type diode and a second N-type diode; the anode of the first N-type diode is grounded; the cathode of the first N-type diode is connected to the input end of the first amplifier circuit 110; the anode and cathode of the second N-type diode are simultaneously connected to the anode of the first N-type diode.

[0060] In this embodiment, the charges released by static electricity are accumulated at the diode to make the diode conductive, and then a large amount of charges accumulated by the protection circuit or the external circuit are output through the conductive path at the moment of conduction, with positive charges being output through the VDD terminal and negative charges being output through the VSS terminal.

[0061] See also Figure 4 , Figure 4 FIG. 1 is an equivalent schematic diagram of the second amplifier circuit 120 in an embodiment of the present application. Figure 4 In the figure, DN1 is the first N-type diode, DN1' is the second N-type diode, VDD is the power supply terminal, Figure 4 The left figure is a schematic diagram of the second amplifier circuit 120. Figure 4 The right figure of is an equivalent schematic diagram of the second amplifier circuit 120. Figure 4 As shown, by connecting the anode and cathode of the second N-type diode to the anode of the first N-type diode at the same time, the two N-type diodes can be equivalent to a triode, so as to realize the current amplification function based on the equivalent triode.

[0062] like Figure 5 As shown, in the above embodiment, the diode includes an N region and a P region. After two diodes of the same type are connected, they can be equivalent to corresponding transistors. For example, two N-type diodes can be equivalent to NPN transistors. Similarly, two P-type diodes can be equivalent to PNP transistors. Thus, the current can be conducted using equivalent transistors. The basic principles of diodes and transistors can refer to the prior art and will not be repeated here.

[0063] Compared with using a P-type diode and an N-type diode to connect the power supply end and the ground end respectively, using two P-type diodes or two N-type diodes equivalent to a transistor can utilize the amplification characteristics of the transistor to amplify the current, thereby improving the charge discharge capability and improving the protection capability against electrostatic discharge.

[0064] The two diodes can be set in the same chip area during manufacturing. For example, if a single diode is originally set in a certain area, two diodes can also be set in the area at the same time, without occupying additional chip area. Therefore, the protection capability against electrostatic discharge can be improved while the chip area occupied by the electrostatic discharge protection circuit remains unchanged. Or, under the condition of the same level of electrostatic discharge protection capability, the chip area occupied can be reduced by using two diodes of the same type, so that the circuit can quickly discharge the electrostatic charge / current with a smaller device size, ensuring the application safety of the chip.

[0065] In semiconductor devices, the chip area occupied by a diode is much smaller than that of other devices with amplification characteristics. For example, the chip area occupied by two diodes is much smaller than that of a transistor. Therefore, compared with other devices with amplification characteristics, using two diodes occupies a smaller chip area.

[0066] In addition, in the chip, parasitic capacitance will be generated between each connecting wire and the device. Therefore, the larger the chip area occupied by the electrostatic discharge protection circuit, the larger the parasitic capacitance generated. The parasitic capacitance will affect the working efficiency of the chip. For example, the larger the parasitic capacitance, the lower the working efficiency of the chip. Therefore, using two diodes of the same type to make the protection circuit 100 have an amplification characteristic can also make the electrostatic discharge protection circuit have a higher working efficiency when the protected circuit has the same electrostatic discharge protection capability, or the electrostatic discharge protection circuit has a stronger protection capability when the protected circuit has the same working efficiency.

[0067] In one embodiment, the first amplifier circuit 110 may include a first PMOS and a second PMOS; the source of the first PMOS is a power supply terminal; the gate and drain of the first PMOS are connected to the output terminal of the second amplifier circuit 120; and the three poles of the second PMOS are all connected to the source of the first PMOS.

[0068] In some embodiments, the second amplifier circuit 120 may include a first NMOS tube and a second NMOS; the source of the first NMOS is grounded; the gate and drain of the first NMOS are connected to the input of the first amplifier circuit 110; and the three electrodes of the second NMOS are all connected to the source of the first NMOS.

[0069] The principle is similar to that of a diode. The charges released by static electricity gather at the MOS tube. A large amount of charges causes the MOS tube to conduct. When the MOS tube is conducted, the charges released by static electricity are discharged through the conduction path, thereby achieving the purpose of electrostatic release protection.

[0070] MOS tubes have the characteristics of parasitic diodes, PMOS can be equivalent to P-type diodes, and NMOS can be equivalent to N-type diodes. Therefore, MOS tubes can be equivalent to diodes, so in the protection circuit 100 provided in the above embodiment, any N-type diode can be replaced by NMOS, and similarly, any P-type diode can be replaced by PMOS, and the replaced first amplifier circuit 110 and the second amplifier circuit 120 also have the effect of amplifying the current.

[0071] In some embodiments, different types of semiconductor devices may be used in the first amplifying circuit 110 and the second amplifying circuit 120. For example, two PMOS transistors are used in the first amplifying circuit 110, and two N-type diodes are used in the second amplifying circuit 120.

[0072] In some embodiments, a combination of a diode and a MOS tube may be used in the first amplifier circuit 110 or the second amplifier circuit 120. For example, a P-type diode and a PMOS may be used in the first amplifier circuit 110, or an N-type diode and an NMOS may be used in the second amplifier circuit 120. The specific connection method of the semiconductor device can refer to the above content and will not be repeated here.

[0073] Similarly, in one embodiment, the first amplifier circuit 110 may further include a PNP transistor, and the emitter and base of the PNP transistor are power supply terminals.

[0074] In this embodiment, when the first amplifier circuit 110 includes a transistor, the first amplifier circuit 110 may include only one PNP transistor. Figure 3 As shown in the right figure, the collector of the PNP transistor can be connected to the charge release end of the protected circuit, so as to amplify the current generated by the electrostatic release of the protected circuit, thereby improving the discharge efficiency of the electrostatic release charge.

[0075] In one embodiment, the second amplifier circuit 120 includes an NPN transistor; the emitter and the base of the NPN transistor are grounded.

[0076] In this embodiment, when the second amplifier circuit 120 includes a transistor, the first amplifier circuit 110 may include only one NPN transistor. Figure 4 As shown in the right figure, the collector of the PNP transistor can be connected to the charge release end of the protected circuit, so as to amplify the current generated by the electrostatic release of the protected circuit, thereby improving the discharge efficiency of the electrostatic release charge.

[0077] The above two diodes or two MOS tubes can be equivalent to a triode. Similar to the principle of the diode, the charges released by electrostatics gather at the triode, and a large amount of charges makes the triode conduct. When the triode is conducted, the charges released by electrostatics will be discharged through the conduction path, thereby achieving the purpose of electrostatic release protection.

[0078] Similarly, the first amplifier circuit 110 and the second amplifier circuit 120 can also directly use PNP transistors and NPN transistors to amplify the current. Compared with a single transistor, two diodes or two MOS transistors occupy a smaller chip area and have lower parasitic capacitance.

[0079] In some embodiments, diodes, transistors and MOS can be mixed and used in the protection circuit 100. For example: the first amplifier circuit 110 is composed of two P-type diodes, and the second amplifier circuit 120 is composed of an NPN transistor; or, the first amplifier circuit 110 is composed of two PMOS tubes, and the second amplifier circuit 120 is composed of an NPN transistor; or, the first amplifier circuit 110 is composed of PNP, and the second amplifier circuit 120 is composed of two N-type diodes; or, the first amplifier circuit 110 is composed of PNP, and the second amplifier circuit 120 is composed of two NMOS; or, the first amplifier circuit 110 is composed of PNP, and the second amplifier circuit 120 is composed of one N-type diode and one NMOS. The above is only an example and is not intended to limit the present application. The connection method of the diode, transistor and MOS tube can refer to the above content and will not be repeated here.

[0080] It can be understood that in the above embodiments, devices such as diodes, MOS tubes and triodes themselves have an on state and an off state, and certain conditions are required for conversion. Therefore, such devices can make the protection circuit 100 in the off state when the protected circuit is in normal working state, and in the on state when the protected circuit is in the state of electrostatic discharge, thereby achieving the basic effect of electrostatic discharge protection. Since such devices themselves or after connection make the protection circuit 100 have amplification characteristics, such devices can also serve the purpose of improving the protection capability.

[0081] In some other embodiments, the electrostatic discharge protection structure may also include Figure 2 For example, in Figure 2 In the figure shown, the first amplifier circuit 110 can be replaced by a P-type diode, the second amplifier circuit 120 can be replaced by an N-type diode, and an amplifier circuit with a unidirectional current amplification function can be respectively arranged between the Pad and the protected circuit. In addition, it should be noted that different ports of the protected circuit may have different requirements for voltage, current, signal accuracy, etc., and a suitable amplifier device or circuit is selected between the charge release end of the protected circuit and the Pad. For example, when the charge release end of the protected circuit is a port for signal transmission, amplifier devices such as transistors should not be used directly at the Pad and the signal output end of the protected circuit. For example, a voltage divider, a current divider, or a circuit can be arranged between the transistor and the release end of the protected circuit. It can be understood that the above is only an example and should not be a limitation to the present application.

[0082] In one embodiment, the electrostatic discharge protection structure may include a plurality of protection circuits 100 ; different protection circuits 100 may be respectively connected to different charge release terminals of the protected circuit.

[0083] like Figure 6 As shown, Figure 6 A schematic diagram of the connection between multiple protection circuits 100 and different ports provided for the implementation of this application. The protected circuit may include multiple ports, and electrostatic discharge may occur at different ports. In this embodiment, the electrostatic discharge protection structure may include multiple protection circuits 100, and each protection circuit 100 is connected to a different port of the protected circuit, and different protection circuits 100 are used to protect different charge release ends of the protected circuit where electrostatic discharge may occur.

[0084] In one embodiment, the protection circuits 100 may be connected to each other, and at least one protection circuit 100 may be connected to a charge release terminal of the protected circuit.

[0085] like Figure 7 As shown, Figure 7 A schematic diagram of multiple protection circuits 100 connected to each other for the implementation of the present application. In this embodiment, multiple protection circuits 100 can be set in the electrostatic discharge protection structure, and different protection circuits 100 are connected to each other. For example, Figure 7 As shown, the two protection circuits 100 are connected in series. The charge release terminal of the protected circuit can be connected to any one of the protection circuits 100, for example, Figure 7 As shown, the protected circuit can be connected between the two protection circuits 100 , or can be connected after the two protection circuits 100 . Figure 7 The above is only an example and should not be construed as limiting the present application. Different charge release ends of the protected circuit can be connected to different protection circuits 100 of the electrostatic discharge protection structure. Since different protection circuits 100 are connected to each other, the charges released by the charge release ends can be released through different protection circuits 100, and different protection circuits 100 can protect the same port of the protected circuit.

[0086] In one embodiment, the electrostatic discharge protection structure includes a plurality of protection circuits 100 , and at least some of the plurality of protection circuits 100 belong to different types of electrostatic discharge models.

[0087] Different reasons for electrostatic discharge have different requirements for electrostatic discharge protection. For example, electrostatic discharge caused by the human body, that is, electrostatic discharge of the human body model, requires that the protection voltage of the electrostatic discharge of the human body model is greater than 2KV, or electrostatic discharge caused by the charging and discharging of semiconductor devices, that is, electrostatic discharge of the charging device model, requires that the protection voltage of the electrostatic discharge of the charging device model is greater than 250V.

[0088] Protection circuits corresponding to different types refer to protection circuits with different protection capabilities. In this embodiment, the performance of different devices in the protection circuit can be selected so that after the different devices are connected into a protection circuit, the protection circuit has corresponding protection capabilities.

[0089] In this embodiment, different types of corresponding protection circuits can be set in the electrostatic discharge protection structure to protect different types of electrostatic discharge. For example, when the electrostatic discharge protection structure includes two protection circuits, the two protection circuits can be different types of electrostatic discharge protection circuits. For another example, when the electrostatic discharge protection structure includes more than three protection circuits, the three protection circuits can be three different types of protection circuits, or two of the protection circuits can be the same type of protection circuits, and the other protection circuit can be another type of protection circuit. The above is only an example and is not intended to be limiting.

[0090] In some embodiments, at least a human body model electrostatic discharge protection circuit and / or a charging device model electrostatic discharge protection circuit may be provided in the electrostatic discharge protection structure.

[0091] In this embodiment, at least a human body model electrostatic release protection circuit can be set in the electrostatic release protection structure to protect the human body from electrostatic release; or, at least a charging device model electrostatic release protection circuit can be set in the electrostatic release protection structure.

[0092] The cause of electrostatic discharge in semiconductor devices is usually caused by human body static electricity or device charging and discharging. Therefore, in this embodiment, a human body model electrostatic release protection circuit and a charging device model electrostatic release protection circuit can also be set up at the same time to simultaneously protect against static electricity caused by the human body and electrostatic release caused by device charging and discharging.

[0093] For ease of understanding, an embodiment of an electrostatic discharge protection structure is provided herein. Figure 8 As shown, Figure 8 This is a circuit connection diagram of an electrostatic release protection structure in an embodiment. DP1, DP1', DP2, and DP2' are all P-type diodes, DN1, DN1', DN2, and DN2' are all N-type diodes, VSS is the ground terminal, VDD is the power supply terminal, PAD1 and PAD2 are two charge release terminals of the protected circuit, PAD is an external port for connecting the protected circuit to an external circuit or chip, and R1 is a resistor. Figure 8 The figure shows two protection circuits, DP1, DP1' and VDD constitute the first amplifier circuit of the first protection circuit, DN1, DN1' and VSS constitute the second amplifier circuit of the first protection circuit, DP2, DP2' and VDD constitute the first amplifier circuit of the second protection circuit, DN2, DN2' and VSS constitute the second amplifier circuit of the second protection circuit.

[0094] The two poles of DP1' are connected to VDD, the negative pole of DP1 is connected to VDD, the positive pole of DP1 is connected to the port of the protected circuit through the second protection circuit, and the positive pole of DP1 is connected to the external port PAD. The two poles of DN1' are connected to VSS, the positive pole of DN1 is connected to VSS, the positive pole of DN1 is connected to the port of the protected circuit through the second protection circuit, and the positive pole of DN1 is connected to the external port.

[0095] The two poles of DP2' are connected to VDD respectively, the negative pole of DP2 is connected to VDD, the positive pole of DP2 is connected to the port of the protected circuit, and the positive pole of DP2 is connected to the external port PAD through the first protection circuit. The two poles of DN2' are connected to VSS respectively, the positive pole of DN2 is connected to VSS, the positive pole of DN2 is connected to the external port through the first protection circuit, and the positive pole of DN2 is connected to the port of the protected circuit.

[0096] The first protection circuit can be configured as a human body model electrostatic discharge protection circuit, and the second protection circuit can be configured as a charged device model electrostatic discharge protection circuit. R1 is connected between the first protection circuit and the second protection circuit for voltage division to reduce the possibility of damage to the second protection circuit caused by excessive voltage of external electrostatic discharge.

[0097] The second charge release terminal PAD2 of the protected circuit is connected between the first protection circuit and the second protection circuit.

[0098] In the above embodiment, when electrostatic discharge occurs in the protected circuit, the charge can flow to the first protection circuit and the second protection circuit through PAD1 or PAD2 for charge discharge. The charge generated by the electrostatic discharge of the external human body is first discharged by the first protection circuit before entering the protected circuit. Any first amplifier circuit or second amplifier circuit can amplify the current formed by the electrostatic discharge, thereby improving the discharge efficiency of the charge, thereby improving the protection efficiency against electrostatic discharge.

[0099] Based on the same inventive concept, an embodiment of the present application further provides a die, which may include the electrostatic discharge protection structure provided by any of the above embodiments.

[0100] In some embodiments, the die may only include an electrostatic discharge protection structure, which is led out of the die through a connection line and connected to a connection port on the die surface. The die may be connected to other die through the connection port on the surface, thereby protecting other die from electrostatic discharge.

[0101] In some embodiments, the die may include an electrostatic discharge protection structure and a functional circuit. The functional circuit may be a circuit that implements any chip function, for example, a circuit corresponding to a processing function, a communication function, etc. In this embodiment, the functional circuit is a protected circuit. The electrostatic discharge protection structure is connected between the functional circuit and the connection port on the surface of the die. The electrostatic discharge protection structure in the die can protect the functional circuit from electrostatic discharge, so that the die has electrostatic discharge protection capability.

[0102] Based on the same inventive concept, an embodiment of the present application further provides a chip, which may include the die provided by the above implementation.

[0103] In this embodiment, the chip can be obtained by packaging one or more dies. In some embodiments, the chip can be obtained by packaging a die having only an electrostatic discharge protection structure and other dies, and the electrostatic discharge protection structure can protect other dies in the chip from electrostatic discharge.

[0104] In some embodiments, the chip may be obtained by packaging different dies with an electrostatic discharge protection structure.

[0105] Based on the same inventive concept, an embodiment of the present application further provides an electronic device, which may include the chip provided in the above embodiment.

[0106] In this embodiment, the crystal grains in the chip include an electrostatic discharge protection structure, and the electronic device includes the chip, so that the electronic device has a protection capability against electrostatic discharge.

[0107] In this embodiment, the electronic device may be a computer, a single-chip microcomputer, a server, etc., but this is not a limitation. The chip may be a chip of different functional modules in the electronic device, for example, the chip may be a chip of a processing module, a chip of a communication module, etc. The above is only an example and should not be a limitation to this application.

[0108] The above embodiments can be freely combined without conflict, and the embodiments obtained by the combination are included in the protection scope of this application.

[0109] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

[0110] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that an article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such article or device.

Claims

1. An electrostatic discharge protection structure, characterized in that: include: A protection circuit connected to a charge release terminal of a protected circuit; The protection circuit is in a cut-off state when the protected circuit is in a normal working state; The protection circuit is in a conducting state when the protected circuit is in a state of electrostatic discharge, so as to discharge the charge released by the electrostatic discharge of the protected circuit; Wherein, the protection circuit has an amplification characteristic, and the amplification characteristic is a characteristic of amplifying the current formed by electrostatic discharge charge; The protection circuit comprises a power supply terminal, a ground terminal, a first amplifier circuit and a second amplifier circuit; the power supply terminal is used to connect to a power supply; the input terminal of the first amplifier circuit is connected to the output terminal of the second amplifier circuit; the charge release terminal is connected between the input terminal of the first amplifier circuit and the output terminal of the second amplifier circuit; the output terminal of the first amplifier circuit is the power supply terminal; The input end of the second amplifier circuit is the ground end; The first amplifier circuit includes a first P-type diode and a second P-type diode, the anode of the first P-type diode is connected to the output end of the second amplifier circuit, the cathode of the first P-type diode is the power supply end, and the anode and cathode of the second P-type diode are simultaneously connected to the cathode of the first P-type diode; Or, the first amplifier circuit includes a first PMOS and a second PMOS, the source of the first PMOS is a power supply terminal, the gate and drain of the first PMOS are connected to the output terminal of the second amplifier circuit, and the three electrodes of the second PMOS are all connected to the source of the first PMOS; Or, the second amplifying circuit includes a first N-type diode and a second N-type diode, the anode of the first N-type diode is the ground terminal, the cathode of the first N-type diode is connected to the ground terminal, and the anode and cathode of the second N-type diode are simultaneously connected to the anode of the first N-type diode; Or, the second amplifier circuit includes a first NMOS tube and a second NMOS; the source of the first NMOS is grounded; the gate and drain of the first NMOS are connected to the input end of the first amplifier circuit; and the three poles of the second NMOS are all connected to the source of the first NMOS.

2. The electrostatic discharge protection structure according to claim 1, characterized in that: The electrostatic discharge protection structure includes a plurality of protection circuits; different protection circuits are respectively connected to different charge release ends of the protected circuit.

3. The electrostatic discharge protection structure according to claim 1 or 2, characterized in that: The electrostatic discharge protection structure includes a plurality of protection circuits, each of which is connected to each other; at least one of the protection circuits is connected to the charge release end of the protected circuit.

4. The electrostatic discharge protection structure according to claim 1 or 2, characterized in that: The electrostatic discharge protection structure includes a plurality of protection circuits, and at least some of the protection circuits belong to different types of electrostatic discharge models.

5. The electrostatic discharge protection structure according to claim 3, characterized in that: The electrostatic discharge protection structure includes a plurality of protection circuits, and at least some of the protection circuits belong to different types of electrostatic discharge models.

6. The electrostatic discharge protection structure according to claim 1 or 2, characterized in that: The protection circuit includes: a human body model electrostatic discharge protection circuit and / or a charging device model electrostatic discharge protection circuit.

7. The electrostatic discharge protection structure according to claim 3, characterized in that: The protection circuit includes: a human body model electrostatic discharge protection circuit and / or a charging device model electrostatic discharge protection circuit.

8. The electrostatic discharge protection structure according to claim 4, characterized in that: The protection circuit includes: a human body model electrostatic discharge protection circuit and / or a charging device model electrostatic discharge protection circuit.

9. The electrostatic discharge protection structure according to claim 5, characterized in that: The protection circuit includes: a human body model electrostatic discharge protection circuit and / or a charging device model electrostatic discharge protection circuit.

10. A crystal grain, characterized in that: It comprises the electrostatic discharge protection structure as described in any one of claims 1 to 9.

11. A chip, characterized in that: Comprising the die as claimed in claim 10.

12. An electronic device, characterized in that: Comprising the chip as claimed in claim 11.

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