A method for inhibiting oxygen diffusion and performance failure at the interface of a functional oxide thin film and a metal capping layer
By preparing functional oxide thin films on single-crystal substrates, selecting appropriate metal capping layer materials, and controlling the preparation temperature, the oxygen diffusion problem between functional oxide thin films and metal capping layers was solved, achieving structural stability and retention of electronic properties under high-temperature conditions.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHENZHEN UNIV
- Filing Date
- 2023-11-13
- Publication Date
- 2026-06-09
AI Technical Summary
The oxygen diffusion interaction between functional oxide films and metal capping layers leads to a decrease in the conductivity of the metal capping layer and affects the electronic properties of the functional oxide films. Existing technologies have failed to effectively solve this problem.
Functional oxide thin films are prepared on single-crystal substrates. By selecting appropriate metal capping layer materials and controlling their preparation temperature, oxygen migration at the interface between the oxide film and the metal capping layer is restricted, ensuring that the film structure does not change and the electronic properties are preserved at high temperatures.
It effectively suppresses oxygen diffusion at the interface between the functional oxide film and the metal capping layer, ensuring the structural stability and retention of electronic properties of the film under high temperature conditions, and avoiding the failure of metal oxide electronic functional devices.
Smart Images
Figure CN117558617B_ABST