Method for manufacturing semiconductor device, method for using substrate processing apparatus, substrate processing apparatus, and recording medium

Abstract

The present invention relates to a method of manufacturing a semiconductor device, a method of using a substrate processing apparatus, a substrate processing apparatus, and a recording medium. The problem to be solved is to reduce the frequency of maintenance of an exhaust section. The method of manufacturing a semiconductor device has the following steps: a step of supplying a processing gas to a substrate in a processing container and exhausting the processing gas from an exhaust section including an exhaust pipe and a pump to thereby process the substrate; a step of directly supplying a first cleaning gas into the exhaust pipe from a supply port provided in the exhaust pipe to thereby clean the exhaust section; and a step of supplying a second cleaning gas into the processing container to thereby clean the processing container, wherein the frequency of performing the step of cleaning the exhaust section is made higher than the frequency of performing the step of cleaning the processing container.

Description

[0001] This application is a divisional application of Chinese Invention Patent Application No. 201810909958.0, filed on August 10, 2018, entitled "Method for Manufacturing a Semiconductor Device, Substrate Processing Apparatus, and Recording Medium". Technical Field

[0002] This invention relates to a method for manufacturing semiconductor devices, a substrate processing apparatus, and a recording medium. Background Technology

[0003] As a step in the manufacturing process of semiconductor devices, the following steps are sometimes performed: supplying processing gas to a substrate in a processing container, and venting the gas from an exhaust section including an exhaust pipe and a pump, thereby processing the substrate. If a predetermined amount of byproducts adheres to the processing container or the like as a result of this step, the processing container or the like is sometimes cleaned at a predetermined time (see, for example, Patent Document 1). Furthermore, if a predetermined amount of byproducts adheres to the exhaust section, the exhaust section is sometimes maintained at a predetermined time.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2002-222805 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] The purpose of this invention is to provide a technique that can reduce the maintenance frequency of the exhaust section.

[0009] Methods for solving problems

[0010] According to one aspect of the present invention, a technique is provided that includes the following steps:

[0011] A process of supplying processing gas to a substrate inside a processing container and venting the gas from an exhaust section including an exhaust pipe and a pump, thereby processing the substrate.

[0012] The process of directly supplying a first cleaning gas into the exhaust pipe from the supply port located in the exhaust pipe, thereby cleaning the exhaust section; and

[0013] The process of supplying a second cleaning gas into the processing container to clean the interior of the processing container.

[0014] The frequency of performing the cleaning process inside the exhaust section is higher than the frequency of performing the cleaning process inside the processing container.

[0015] This application relates to the following:

[0016] Item 1. A method for manufacturing a semiconductor device, comprising the following steps:

[0017] A process of supplying processing gas to a substrate inside a processing container and venting the gas from an exhaust section including an exhaust pipe and a pump, thereby processing the substrate.

[0018] The process of directly supplying a first cleaning gas into the exhaust pipe from the supply port located in the exhaust pipe, thereby cleaning the exhaust section; and

[0019] The process of supplying a second cleaning gas into the processing container to clean the interior of the processing container.

[0020] The frequency of performing the cleaning process inside the exhaust section is higher than the frequency of performing the cleaning process inside the processing container.

[0021] Item 2. The method for manufacturing the semiconductor device according to Item 1 further includes a step of replacing the pump.

[0022] The frequency of performing the pump replacement procedure is lower than the frequency of performing the cleaning procedure inside the processing container.

[0023] Item 3. The method for manufacturing a semiconductor device according to Item 1 further includes a step of replacing the exhaust pipe.

[0024] The frequency of performing the process of replacing the exhaust pipe is lower than the frequency of performing the process of cleaning the inside of the processing container.

[0025] Item 4. The method for manufacturing a semiconductor device according to Item 1 further includes a step of replacing the pump and a step of replacing the exhaust pipe.

[0026] The frequency of performing the process of replacing the exhaust pipe is less than the frequency of performing the process of replacing the pump.

[0027] Item 5. The method for manufacturing a semiconductor device according to Item 1, wherein,

[0028] After each step of processing the substrate, a step of cleaning the venting section is performed.

[0029] After each step of processing the substrate multiple times, a step of cleaning the processing container is performed.

[0030] Item 6. The method for manufacturing a semiconductor device according to Item 1, wherein a step of cleaning the venting section is performed during the period between the completion of the substrate processing and the start of the processing of the next substrate.

[0031] Item 7. The method for manufacturing a semiconductor device according to Item 1, wherein a step of cleaning the venting section is performed while the substrate is housed in the processing container.

[0032] Item 8. A method for manufacturing a semiconductor device according to Item 1, wherein, after the substrate processing is completed and before the substrate having undergone the processing is removed from the processing container, a step of cleaning the exhaust section is performed.

[0033] Item 9. The method for manufacturing a semiconductor device according to Item 1, wherein after the substrate processing is completed and the processed substrate is removed from the processing container, a step of cleaning the processing container is performed.

[0034] Item 10. A method for manufacturing a semiconductor device according to Item 1, wherein a step of cleaning the interior of the exhaust section is performed while the opening of the processing container for the entry and exit of the substrate is closed rather than open.

[0035] Item 11. The method for manufacturing a semiconductor device according to Item 1, wherein the step of cleaning the interior of the exhaust section is performed while the exhaust valve of the exhaust pipe is in a completely closed state, and the exhaust valve is located upstream of the portion where the supply port is located.

[0036] Item 12. The method for manufacturing a semiconductor device according to Item 1, wherein the first cleaning gas comprises hydrogen fluoride gas, and the second cleaning gas comprises fluorine gas, chlorine fluoride gas, nitrogen fluoride gas, or hydrogen fluoride gas.

[0037] Item 13. A method for manufacturing a semiconductor device according to Item 1, wherein, in the process of processing the substrate, a film comprising at least silicon and oxygen is formed on the substrate.

[0038] Item 14, a substrate processing apparatus, comprising:

[0039] A processing container for performing substrate processing;

[0040] A process gas supply system for supplying process gas to the substrate within the processing container;

[0041] An exhaust section comprising an exhaust pipe and a pump, which discharges the processing gas supplied to the processing container.

[0042] A first clean gas supply system that directly supplies first clean gas into the exhaust pipe from the supply port provided in the exhaust pipe;

[0043] A second cleaning gas supply system for supplying a second cleaning gas into the processing container; and

[0044] The control unit is configured to control the processing gas supply system, the exhaust section, the first cleaning gas supply system, and the second cleaning gas supply system to perform the following steps: supplying the processing gas to the substrate in the processing container and exhausting the gas from the exhaust section to process the substrate; directly supplying the first cleaning gas into the exhaust pipe from the supply port provided in the exhaust pipe to clean the exhaust section; and supplying the second cleaning gas into the processing container to clean the processing container, and the frequency of performing the step of cleaning the exhaust section is higher than the frequency of performing the step of cleaning the processing container.

[0045] Item 15. A computer-readable recording medium having a program recorded thereon that causes a substrate processing apparatus to perform the following steps via a computer:

[0046] The step of processing the substrate by supplying processing gas to the substrate in the processing container of the substrate processing apparatus and venting the gas from the exhaust section including the exhaust pipe and the pump.

[0047] The step of directly supplying a first cleaning gas into the exhaust pipe from the supply port provided in the exhaust pipe, thereby cleaning the exhaust section;

[0048] The step of supplying a second cleaning gas into the processing container to clean the interior of the processing container; and

[0049] A step in which the frequency of performing the step of cleaning the exhaust section is higher than the frequency of performing the step of cleaning the processing container.

[0050] Invention Effects

[0051] According to the present invention, the maintenance frequency of the exhaust section can be reduced. Attached Figure Description

[0052] [ Figure 1 This is a schematic configuration diagram of a vertical processing furnace suitable for use in a substrate processing apparatus according to an embodiment of the present invention, and is a longitudinal sectional view showing the processing furnace portion.

[0053] [ Figure 2 This is a schematic diagram of a vertical processing furnace of a substrate processing apparatus suitable for use in one embodiment of the present invention, and is based on... Figure 1 The AA-line cross-section diagram shows the processing furnace section.

[0054] [ Figure 3 This is a schematic diagram of the controller of a substrate processing apparatus suitable for use in one embodiment of the present invention, and a block diagram showing the control system of the controller.

[0055] [ Figure 4 [A diagram illustrating the substrate processing sequence according to an embodiment of the present invention.]

[0056] [ Figure 5 (a) is a graph showing the maintenance frequency of the exhaust section without performing the first cleaning treatment, and (b) is a graph showing the maintenance frequency of the exhaust section with performing the first cleaning treatment.

[0057] [ Figure 6 This diagram illustrates the reaction between byproducts adhering to the exhaust section and the HF gas supplied to the exhaust section.

[0058] [Explanation of reference numerals in the attached figures]

[0059] 200 wafers (substrates) Detailed Implementation

[0060] <An embodiment of the present invention>

[0061] The following is for reference Figures 1-4 This describes one embodiment of the present invention.

[0062] (1) Composition of substrate processing device

[0063] like Figure 1 As shown, the processing furnace 202 has a heater 207 as a heating mechanism (temperature control unit). The heater 207 is cylindrical and is vertically mounted by being supported on a retaining plate. The heater 207 also functions as an activation mechanism (activation unit) that activates (excites) gas by heat.

[0064] Inside the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC) and is formed into a cylindrical shape that is closed at the top and open at the bottom. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of a metal such as stainless steel (SUS) and is formed into a cylindrical shape that is open at both the top and bottom. The upper end of the manifold 209 is configured to engage with the lower end of the reaction tube 203 and support the reaction tube 203. An O-ring 220a is provided between the manifold 209 and the reaction tube 203 as a sealing component. The reaction tube 203 is installed vertically, just like the heater 207. The processing container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the hollow portion of the processing container. The processing chamber 201 is configured to accommodate a wafer 200, which serves as a substrate.

[0065] Inside the processing chamber 201, nozzles 249a and 249b are arranged to penetrate the side wall of the manifold 209. Gas supply pipes 232a and 232b are respectively connected to nozzles 249a and 249b.

[0066] On gas supply pipes 232a and 232b, mass flow controllers (MFCs) 241a and 241b, serving as flow controllers (flow control units), and valves 243a and 243b, serving as on / off valves, are sequentially installed from the upstream side. Gas supply pipes 232c and 232d are connected to gas supply pipes 232a and 232b, respectively, further downstream than valves 243a and 243b. On gas supply pipes 232c and 232d, MFCs 241c and 241d, and valves 243c and 243d, are sequentially installed from the upstream side.

[0067] like Figure 2 As shown, in a top view, the space between the inner wall of the reaction tube 203 and the wafer 200 is annular. Nozzles 249a and 249b are respectively provided vertically from the lower part of the inner wall of the reaction tube 203 upwards toward the mounting direction of the wafer 200. That is, in the area horizontally surrounding the wafer arrangement area of ​​the wafer 200, nozzles 249a and 249b are respectively provided along the wafer arrangement area. Gas supply holes 250a and 250b are respectively provided on the sides of the nozzles 249a and 249b. Gas supply holes 250a and 250b open toward the center of the reaction tube 203, allowing gas to be supplied toward the wafer 200. Multiple gas supply holes 250a and 250b are provided from the lower part to the upper part of the reaction tube 203.

[0068] As the processing gas (raw material gas), a Si-containing gas (halosilane gas) containing Si as a specified element (main element) and halogen elements is supplied to the processing chamber 201 from the gas supply pipe 232a via MFC 241a, valve 243a, and nozzle 249a. For example, a chlorosilane gas containing Cl can be used as the halosilane gas. For example, hexachlorosilane (Si₂Cl₆, abbreviated as HCDS) gas can be used as the chlorosilane gas.

[0069] Fluorine (F2) gas, as the second cleaning gas, is supplied from gas supply pipe 232a to the treatment chamber 201 via MFC 241a, valve 243a, and nozzle 249a.

[0070] The nitrogen-containing gas (nitriding agent) as the processing gas (nitriding gas) is supplied to the processing chamber 201 from the gas supply pipe 232b via MFC 241b, valve 243b, and nozzle 249b. For example, ammonia (NH3) gas can be used as the nitrogen-containing gas.

[0071] An O-containing gas (oxidant) as a processing gas (oxidizing gas) is supplied from gas supply pipe 232b to processing chamber 201 via MFC 241b, valve 243b, and nozzle 249b. For example, oxygen (O2) gas can be used as the O-containing gas.

[0072] Inactive gases are supplied to the processing chamber 201 from gas supply pipes 232c and 232d via MFCs 241c and 241d, valves 243c and 243d, gas supply pipes 232a and 232b, and nozzles 249a and 249b, respectively. For example, nitrogen (N2) gas can be used as the inactive gas. N2 gas functions as a purge gas and a carrier gas.

[0073] The system primarily consists of gas supply pipe 232a, MFC 241a, and valve 243a, which together form the processing gas (raw material gas) supply system and the second clean gas supply system, respectively. The system primarily consists of gas supply pipe 232b, MFC 241b, and valve 243b, which together form the processing gas (nitriding gas and oxidizing gas) supply system. The system primarily consists of gas supply pipes 232c and 232d, MFC 241c and 241d, and valves 243c and 243d, which together form the inactive gas supply system. Additionally, the system primarily consists of gas supply pipe 232e, MFC 241e, and valve 243e, described later, which together form the first clean gas supply system.

[0074] Any or all of the aforementioned gas supply systems can be configured as an integrated supply system 248 consisting of integrated valves 243a-243e, MFCs 241a-241e, etc. The integrated supply system 248 is configured such that it is connected to gas supply pipes 232a-232e respectively, and the supply of various gases to the gas supply pipes 232a-232e is controlled by the controller 121 described later; that is, the opening and closing of valves 243a-243e, and the flow regulation using MFCs 241a-241e, etc. The integrated supply system 248 is configured as an integral or separate integrated unit, and is configured such that it can be disassembled and assembled relative to the gas supply pipes 232a-232e, etc., as an integrated unit unit, and that the integrated supply system 248 can be maintained, replaced, or added as an integrated unit unit.

[0075] An exhaust pipe 231 is connected to the lower side wall of the reaction tube 203 to expel the atmosphere from the processing chamber 201. A vacuum pump 246, serving as a vacuum exhaust device, is connected to the exhaust pipe 231 via a pressure sensor 245 (pressure detector, pressure detection unit) and an APC (Auto Pressure Controller) valve 244 (pressure regulator, pressure regulating unit) to detect the pressure inside the processing chamber 201. The APC valve 244 is configured such that by opening and closing the valve while the vacuum pump 246 is operating, vacuum exhaust can be performed and stopped inside the processing chamber 201. Furthermore, by adjusting the valve opening based on the pressure information detected by the pressure sensor 245 while the vacuum pump 246 is operating, the pressure inside the processing chamber 201 can be adjusted.

[0076] In the exhaust pipe 231, at least the portion located downstream of the APC valve 244 is designed to be detachable and replaceable. A supply port 231p is provided on the exhaust pipe 231e. A gas supply pipe 232e is connected to the supply port 231p. An MFC 241e and a valve 243e are sequentially arranged from the upstream side on the gas supply pipe 232e. A first cleaning gas, such as hydrogen fluoride (HF), is supplied from the gas supply pipe 232e through the MFC 241e, the valve 243e, and the supply port 231p into the exhaust pipe 231e and the vacuum pump 246.

[0077] The exhaust system mainly consists of exhaust pipe 231, APC valve 244, and pressure sensor 245. Additionally, the exhaust section mainly consists of exhaust pipe 231e and vacuum pump 246. It is also possible to include supply port 231p within the exhaust section. Alternatively, the exhaust section can be included within the exhaust system.

[0078] Below the current collector 209, a sealing cover 219, serving as a first cover, is provided to hermetically seal the lower opening of the current collector 209 (i.e., the opening for the wafer 200 to enter and exit). The sealing cover 219 is made of a metal material such as SUS and is formed in a disc shape. An O-ring 220b, serving as a sealing member, is provided on the upper surface of the sealing cover 219 and abuts against the lower end of the current collector 209. Below the sealing cover 219, a rotation mechanism 267 is provided to rotate the wafer boat 217 (described later). The rotation shaft 255 of the rotation mechanism 267 passes through the sealing cover 219 and is connected to the wafer boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the wafer boat 217. The sealing cover 219 is configured to be able to move vertically by a wafer boat lift 115, which is provided outside the current collector 209 and serves as a lifting mechanism. The crystal boat lift 115 is configured as a conveying device (conveyor) capable of moving the wafer 200 into and out of the processing chamber 201 by raising and lowering the sealing cover 219. Furthermore, a gate 219s, serving as a second cover, is provided below the manifold 209. This gate can airtightly seal the lower opening of the manifold 209 while the sealing cover 219 is lowered to remove the crystal boat 217 from the processing chamber 201. The gate 219s is made of a metal material such as SUS and is formed in a disc shape. An O-ring 220c, serving as a sealing member, is provided on the upper surface of the gate 219s, abutting against the lower end of the manifold 209. The opening and closing actions (raising and lowering actions, rotating actions, etc.) of the gate 219s are controlled by the gate opening and closing mechanism 115s.

[0079] The crystal boat 217, serving as a substrate support, is configured to vertically arrange multiple wafers 200 (e.g., 25 to 200) in a horizontal orientation and with their centers aligned, providing multi-layer support; that is, the multiple wafers 200 are arranged with intervals between them. The crystal boat 217 is made of a heat-resistant material such as quartz or SiC. At the bottom of the crystal boat 217, a heat-insulating plate 218 made of a heat-resistant material such as quartz or SiC is supported in multiple layers.

[0080] A temperature sensor 263, serving as a temperature detector, is installed inside the reaction tube 203. The energizing of the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263, thereby achieving the desired temperature distribution within the processing chamber 201. The temperature sensor 263 is installed along the inner wall of the reaction tube 203.

[0081] like Figure 3As shown, the controller 121, serving as the control unit (control means), is configured as a computer equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, storage device 121c, and I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, such as a touch panel, is connected to the controller 121.

[0082] The storage device 121c is configured with, for example, flash memory or an HDD (Hard Disk Drive). Within the storage device 121c, a control program for controlling the operation of the substrate processing apparatus, a process flow describing the steps and conditions of the substrate processing (described later), and a cleaning process describing the steps and conditions of the cleaning process (described later) are stored in a readable manner. The process flow and the cleaning process are combined in a way that enables the controller 121 to execute each step of the substrate processing and cleaning process (described later) and obtain a predetermined result, thus functioning as a program. Hereinafter, the process flow, cleaning process, control program, etc., will also be collectively referred to as a program. Additionally, the process flow and cleaning process will also be referred to simply as a process. In this specification, when using the term "program," sometimes it refers only to the process, sometimes only to the control program, or sometimes both. RAM 121b is configured as a memory area (working area) that temporarily holds the program, data, etc., read by the CPU 121a.

[0083] I / O port 121d is connected to the aforementioned MFC241a~241e, valves 243a~243e, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotating mechanism 267, crystal boat elevator 115, gate opening and closing mechanism 115s, etc.

[0084] CPU 121a is configured to read and execute control programs from storage device 121c, and to read processes from storage device 121c based on inputs such as operation commands from input / output device 122. CPU 121a is configured to control, in accordance with the read process contents, the flow regulation of various gases using MFCs 241a to 241e, the opening and closing of valves 243a to 243e, the opening and closing of APC valve 244 and the pressure regulation of APC valve 244 based on pressure sensor 245, the start and stop of vacuum pump 246, the temperature regulation of heater 207 based on temperature sensor 263, the rotation and rotation speed regulation of crystal boat 217 using rotating mechanism 267, the lifting and lowering of crystal boat 217 using crystal boat elevator 115, and the opening and closing of gate 219s using gate opening and closing mechanism 115s, etc.

[0085] The controller 121 is configured to install the aforementioned program stored in an external storage device (e.g., a hard disk such as an HDD, an optical disk such as a CD, an optical disk such as an MO, a semiconductor memory such as a USB memory) 123 into a computer. The storage device 121c and the external storage device 123 constitute a computer-readable storage medium. Hereinafter, these will be collectively referred to simply as recording media. When the term "recording media" is used in this specification, sometimes only the storage device 121c is included, sometimes only the external storage device 123 is included, or sometimes both are included. It should be noted that the program can also be provided to the computer without using the external storage device 123, but using communication methods such as the Internet or a dedicated line.

[0086] (2) Substrate treatment

[0087] use Figure 4 The following sequence example will be described: Using the above-described substrate processing apparatus as a step in the manufacturing process of a semiconductor device, a film containing Si, O, and N, namely a silicon oxynitride (SiON) film, is formed on a wafer 200 serving as a substrate. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121. In this respect, the same applies to the first and second cleaning processes described later.

[0088] In the film formation sequence of this embodiment, the following cycle is performed a predetermined number of times (n times, where n is an integer greater than or equal to 1), wherein the following steps are performed non-simultaneously: step 1, supplying HCDS gas as a processing gas (raw material gas) to the wafer 200 in the processing container; step 2, supplying NH3 gas as a processing gas (nitriding agent) to the wafer 200 in the processing container; and step 3, supplying O2 gas as a processing gas (oxidizing agent) to the wafer 200 in the processing container.

[0089] For convenience, the above film-forming sequence is sometimes represented as follows in this specification. The same representation is used in the following descriptions of variations, etc.

[0090]

[0091] In this specification, when the term "wafer" is used, it sometimes refers to "the wafer itself" or "a laminate of a wafer and a specified layer, film, etc., formed on its surface." When the term "surface of the wafer" is used, it sometimes refers to "the surface of the wafer itself" or "the surface of a specified layer, film, etc., formed on the wafer." When described as "forming a specified layer (or film) on the wafer," it sometimes means "forming a specified layer directly on the surface of the wafer itself" or "forming a specified layer on a layer, etc., formed on the wafer."

[0092] (Chip filling ~ Crystal boat loading)

[0093] After multiple wafers 200 are loaded (wafer filling) onto the crystal boat 217, the gate 219s is moved by the gate opening and closing mechanism 115s, thereby opening the lower end opening of the current collector 209 (gate opening). Then, as... Figure 1 As shown, a crystal boat 217 supporting multiple wafers 200 is lifted by a crystal boat elevator 115 and moved (crystal boat loading) into the processing chamber 201. In this state, the sealing cover 219 is in a state where the lower end of the manifold 209 is sealed by means of an O-ring 220b.

[0094] (Pressure and temperature regulation)

[0095] To achieve the desired pressure (vacuum) within the processing chamber 201, i.e., the space where the wafer 200 is located, vacuum pump 246 performs vacuum venting (pressure reduction venting). At this time, pressure sensor 245 measures the pressure within the processing chamber 201, and APC valve 244 is controlled based on this measured pressure information. Furthermore, the wafer 200 within the processing chamber 201 is heated by heater 207 to achieve the desired processing temperature. At this time, the energization of heater 207 is controlled based on temperature information detected by temperature sensor 263 to achieve the desired temperature distribution within the processing chamber 201. Additionally, the wafer 200 is rotated using rotation mechanism 267. The operation of vacuum pump 246, heating of wafer 200, and rotation all continue at least until the processing of wafer 200 is completed.

[0096] (Film-forming treatment)

[0097] Then, proceed with steps 1 through 3 in sequence.

[0098] [Step 1]

[0099] In this step, HCDS gas is supplied to the wafer 200 inside the processing chamber 201.

[0100] Specifically, valve 243a is opened, allowing HCDS gas to flow into gas supply pipe 232a. The HCDS gas flow rate is regulated using MFC 241a, and it is supplied to processing chamber 201 via nozzle 249a and discharged from exhaust pipe 231. At this time, HCDS gas is supplied to wafer 200. Alternatively, valves 243c and 243d can be opened to allow N2 gas to flow into gas supply pipes 232c and 232d.

[0101] As a processing condition in this step, an example can be given:

[0102] HCDS gas supply flow rate: 1–2000 sccm, preferably 10–1000 sccm

[0103] N2 gas supply flow rate (per gas supply pipe): 0~10000sccm

[0104] Gas supply time: 1–120 seconds, preferably 1–60 seconds

[0105] Processing temperature: 250–800℃, preferably 400–700℃

[0106] Processing pressure: 1~2666Pa, preferably 67~1333Pa.

[0107] By supplying HCDS gas to the wafer 200 under the above conditions, a Si-containing layer containing Cl is formed on the outermost surface of the wafer 200 as a first layer. The Si-containing layer containing Cl is a substance obtained by the physical adsorption of HCDS onto the outermost surface of the wafer 200, and is derived from the decomposition of a portion of the HCDS (hereinafter, Si). x Cl y The Si-containing layer, including Cl, is formed by chemical adsorption on the outermost surface of wafer 200 or by thermal decomposition of HCDS. It can be formed from HCDS, Si, etc. x Cl y The adsorption layer (physical adsorption layer, chemisorption layer) can also be a Si layer containing Cl. It should be noted that in this specification, the Si layer containing Cl will also be referred to simply as the Si layer.

[0108] After the first layer is formed on wafer 200, valve 243a is closed to stop the supply of HCDS gas to processing chamber 201. Additionally, the processing chamber 201 is evacuated to remove any remaining gases. At this time, valves 243c and 243d are opened to supply N2 gas to processing chamber 201. N2 gas acts as a purge gas.

[0109] Besides HCDS gases, other chlorosilane gases (containing Si) that can be used as feedstock gases include monochlorosilane (SiH3Cl, abbreviated as MCS), dichlorosilane (SiH2Cl2, abbreviated as DCS), trichlorosilane (SiHCl3, abbreviated as TCS), tetrachlorosilane (SiCl4, abbreviated as STC), and octachlorotrisilane (Si3Cl8, abbreviated as OCTS). Additionally, tetrafluorosilane (SiF4), tetrabromosilane (SiBr4), and tetraiodosilane (SiI4) gases can also be used as feedstock gases. In other words, various halosilane gases, such as fluorosilanes, bromosilanes, and iodosilanes, can be used as feedstock gases.

[0110] In addition, various aminosilane gases, such as bis(diethylamino)silane (SiH2[N(C2H5)2]2, abbreviated as BDEAS), bis(tert-butylamino)silane (SiH2[NH(C4H9)]2, abbreviated as BTBAS), tri(diethylamino)silane (SiH[N(C2H5)2]3, abbreviated as 3DEAS), tri(dimethylamino)silane (SiH[N(CH3)2]3, abbreviated as 3DMAS), tetra(diethylamino)silane (Si[N(C2H5)2]4, abbreviated as 4DEAS), and tetra(dimethylamino)silane (Si[N(CH3)2]4, abbreviated as 4DMAS), can be used as raw material gases (containing Si).

[0111] In addition to N2, various rare gases such as Ar, He, Ne, and Xe can be used as the purging gas. The same applies to steps 2 and 3 described later.

[0112] [Step 2]

[0113] After step 1 is completed, NH3 gas is supplied to the wafer 200 in the processing chamber 201, that is, to the first layer formed on the wafer 200.

[0114] Specifically, valves 243b to 243d are controlled to open and close using the same steps as those used for 243a, 243c, and 243d in step 1. NH3 gas is regulated by MFC 241b, supplied to the processing chamber 201 via nozzle 249b, and discharged from exhaust pipe 231. At this time, NH3 gas is supplied to the wafer 200.

[0115] As a processing condition in this step, an example can be given:

[0116] NH3 gas supply flow rate: 100~10000sccm

[0117] Processing pressure: 1-4000 Pa, preferably 1-3000 Pa.

[0118] The other processing conditions are the same as those in step 1.

[0119] By supplying NH3 gas to the wafer 200 under the above conditions, at least a portion of the first layer formed on the wafer 200 in step 1 can be modified (nitrided). This allows Cl to detach from the first layer and allows the N component contained in the NH3 gas to be incorporated into the first layer. By modifying the first layer in this way, a silicon nitride layer (SiN layer) containing Si and N is formed on the wafer 200 as the second layer.

[0120] After the second layer is formed on the wafer 200, valve 243b is closed to stop the supply of NH3 gas to the processing chamber 201. Additionally, using the same processing steps as in step 1, any remaining gases or other contaminants in the processing chamber 201 are removed from the processing chamber 201.

[0121] In addition to NH3 gas, diazoxide (N2H2) gas, hydrazine (N2H4) gas, N3H8 gas, and gases containing these compounds can also be used as nitriding agents.

[0122] [Step 3]

[0123] After step 2 is completed, O2 gas is supplied to the wafer 200 in the processing chamber 201, that is, the second layer formed on the wafer 200.

[0124] Specifically, the opening and closing of valves 243b to 243d are controlled using the same steps as the opening and closing control of valves 243a, 243c, and 243d in step 1. O2 gas is regulated by MFC 241b, supplied to the processing chamber 201 via nozzle 249b, and discharged from exhaust pipe 231. At this time, O2 gas is supplied to the wafer 200.

[0125] As a processing condition in this step, an example can be given:

[0126] O2 gas supply flow rate: 100~10000sccm

[0127] Processing pressure: 1-4000 Pa, preferably 1-3000 Pa.

[0128] The other processing conditions are the same as those in step 1.

[0129] By supplying O2 gas to the wafer 200 under the above conditions, at least a portion of the second layer formed on the wafer 200 in step 2 can be modified (oxidized). This allows Cl to detach from the second layer and allows O components contained in the O2 gas to be incorporated into the second layer. By modifying the second layer in this way, a silicon oxynitride (SiON) layer containing Si, O, and N is formed on the wafer 200 as a third layer.

[0130] After the third layer is formed on the wafer 200, valve 243b is closed to stop the supply of O2 gas to the processing chamber 201. Additionally, using the same processing steps as in step 1, any remaining gas or other contaminants in the processing chamber 201 are removed from the processing chamber 201.

[0131] In addition to O2 gas, other oxidants that can be used include nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), ozone (O3), hydrogen peroxide (H2O2), water vapor (H2O), carbon monoxide (CO), and carbon dioxide (CO2).

[0132] [To be implemented the prescribed number of times]

[0133] By performing steps 1 to 3 asynchronously a predetermined number of times (n times, where n is an integer greater than or equal to 1), a SiON film with a predetermined composition and thickness can be formed on the wafer 200. It is preferable to repeat the above-described cycle multiple times. That is, preferably, the thickness of the third layer formed in each cycle is thinner than the desired film thickness, and the above cycle is performed multiple times until the film thickness formed by stacking the third layers reaches the desired film thickness.

[0134] (Post-purging and atmospheric pressure recovery)

[0135] After the film formation process is completed, N2 gas is supplied into the treatment chamber 201 through gas supply pipes 232c and 232d, and discharged through exhaust pipe 231. This purges the treatment chamber 201, removing residual gases and reaction byproducts (post-purge). After the atmosphere in the treatment chamber 201 is replaced with an inactive gas (inactive gas replacement), the APC valve 244 is fully closed. Then, by continuously supplying N2 gas into the treatment chamber 201, the pressure inside the chamber is restored to atmospheric pressure (atmospheric pressure restoration).

[0136] (Crystal boat unloading ~ chip removal)

[0137] Then, the sealing cover 219 is lowered using the crystal boat lift 115, opening the lower end of the current collector 209, and the processed wafer 200, supported on the crystal boat 217, is moved from the lower end of the current collector 209 to the outside of the reaction tube 203 (crystal boat unloading). After the crystal boat is unloaded, the gate 219s is moved, sealing the lower opening of the current collector 209 via the O-ring 220c (gate closing). After the processed wafer 200 is moved to the outside of the reaction tube 203, it is removed from the crystal boat 217 (wafer removal).

[0138] (3) First cleaning treatment

[0139] After performing the above substrate processing (batch processing), i.e., film formation processing, at least inside the venting section, a substrate containing silicon oxide (SiO2) is deposited. x Byproducts such as SiO2 are present. Specifically, byproducts such as SiO2 are deposited on the inner wall of the exhaust pipe 231e and on the surfaces of components inside the vacuum pump 246. x Byproducts such as these are produced. During the film-forming process, the temperature of the exhaust pipe 231e and the vacuum pump 241 is lower than that of the processing container and the exhaust pipe 231, which is located upstream of the APC valve 244. Therefore, there is a tendency for a large amount of byproducts to adhere inside the exhaust section compared to the inside of the processing container and the inside of the exhaust pipe 231, which is located upstream of the APC valve 244.

[0140] For byproducts adhering to the interior of the exhaust section, if batch processing is repeatedly performed while they are still adhering to the interior of the exhaust section, fixation may occur depending on the number of batch processing sessions. Even if a cleaning gas such as HF is supplied to the interior of the exhaust section, it is difficult to etch the fixed byproducts, making it difficult to remove them from the interior of the exhaust section. Therefore, in this embodiment, before the above-mentioned film formation process is performed several times (preferably once per batch), i.e., before the byproducts are fixed inside the exhaust section, HF gas is supplied directly to the exhaust section without passing through the processing container, thereby cleaning the interior of the exhaust section. It should be noted that the number of batch processing sessions refers to the number of times the substrate processing is performed from wafer filling to wafer removal.

[0141] When cleaning the exhaust section, HF gas, serving as the first cleaning gas, is introduced into the gas supply pipe 232e by opening valve 243e with APC valve 244 fully closed. The HF gas, with its flow rate regulated by MFC 241e, is supplied to the interior of the exhaust pipe 231e and the vacuum pump 246 via supply port 231p, coming into contact with the inner wall of the exhaust pipe 231e and the surfaces of components inside the vacuum pump 246. At this time, a thermochemical reaction (etching reaction) occurs between the HF gas and byproducts, removing the byproducts from the exhaust section. It should be noted that this process can be performed with the vacuum pump 246 either stopped or running.

[0142] In this specification, the aforementioned treatment performed on the interior of the exhaust section is referred to as the "first cleaning treatment." The frequency of performing the first cleaning treatment is higher than the frequency of performing the second cleaning treatment described later. For example, the frequency of performing the first cleaning treatment is as described above, preferably once per batch, and the frequency of performing the second cleaning treatment is once every 300 to 500 batches. By performing the first cleaning treatment at such a high frequency, byproducts adhering to the exhaust section can be etched away in a small (poor) state before they are fixed inside the exhaust section. Moreover, byproducts adhering to the exhaust section can be easily and reliably removed from the exhaust section, that is, efficiently and effectively. As a result, the frequency of maintenance operations on the exhaust section (e.g., the frequency of maintenance operations such as replacing, cleaning, and overhauling the exhaust pipe 231e and vacuum pump 246) can be reduced. The frequency of replacing the vacuum pump 246 can be set to a frequency lower than the frequency of performing the second cleaning treatment (once every 300 to 500 batches), for example, once every 2000 to 2500 batches. The internal clearance of the exhaust pipe 231e is greater than the clearance of the vacuum pump 246. Therefore, the frequency of replacing the exhaust pipe 231e can be set to a frequency lower than that of replacing the vacuum pump 246.

[0143] The first cleaning treatment is preferably performed after the film-forming process is completed and before the next film-forming process begins. That is, the first cleaning treatment is preferably performed during the implementation of batch processing. As a result, by performing the first cleaning treatment quickly after the film-forming process is completed and before the byproducts adhering to the exhaust section are fixed, the byproducts can be removed from the exhaust section more effectively.

[0144] The first cleaning process can be performed while the wafer 200 is housed in the processing container. Specifically, the first cleaning process can be performed after the wafer 200 is housed in the processing container and before the film deposition process begins (the period after loading and before film deposition). Alternatively, the first cleaning process can be performed after the film deposition process is completed and before the wafer 200, which has undergone film deposition, is removed from the processing container (the period after film deposition and before removal). In particular, in the latter case, since the byproducts adhering to the venting section can be etched with a smaller amount, the fixation of byproducts adhering to the venting section can be more effectively prevented, and the byproducts can be more effectively removed from the venting section. It should be noted that when the first cleaning process is performed while the wafer 200 is housed in the processing container, this process is preferably performed with the lower end opening of the manifold 209 sealed by the sealing cap 219.

[0145] Furthermore, the first cleaning process can also be performed after the film deposition process is completed, in the state after the wafer 200 that has undergone film deposition has been removed from the processing container, that is, in the state when the processing container does not contain the wafer 200. Specifically, the first cleaning process can also be performed during the period after the wafer 200 that has undergone film deposition has been removed from the processing container and before the wafer 200 to be processed in the next film deposition process is placed in the processing container (the period after removal and before placement). If the first cleaning process is performed during the period after removal and before placement, the standby period between film deposition processes (e.g., the period required for wafer removal and wafer filling) can be effectively utilized. It should be noted that when the first cleaning process is performed in the state where the processing container does not contain the wafer 200, it is preferable to perform the above process in the state where the lower opening of the manifold 209 is sealed by the gate 219s.

[0146] As described above, the first cleaning process can be performed in either the state where the wafer 200 is contained in the processing container or the state where the wafer 200 is not contained in the processing container. In either of these states, the first cleaning process is performed with the lower opening of the manifold 209 sealed by a cover such as the sealing cap 219 or the gate 219s, rather than being opened. Furthermore, in both of these states, the first cleaning process is performed with the exhaust valve 244, which is located upstream of the portion of the exhaust pipe 231e where the supply port 231p is located, completely closed. By performing the first cleaning process with the APC valve 244 completely closed, backflow of HF gas supplied to the exhaust section into the processing container can be prevented. In addition, by performing the first cleaning process with the lower opening of the manifold 209 sealed, even if HF gas supplied to the exhaust section backflows into the processing container, release (leakage) of HF gas into the processing container can be prevented. As described above, the safety of the first cleaning process can be improved by doubly controlling the opening of the lower end of the manifold 209 and the opening and closing of the APC valve 244 (safety control).

[0147] like Figure 4 As shown, in the substrate processing sequence of this embodiment, the first cleaning process begins after the post-purge and ends before the unloading of the crystal boat. That is, the first cleaning process is performed in parallel with atmospheric pressure recovery. In this case, since the first cleaning process begins quickly after the film deposition process, byproducts from the exhaust section can be easily and reliably removed. In addition, at the moment when the first cleaning process begins, i.e., when atmospheric pressure recovery begins, as described above, the APC valve 244 is in a fully closed state, and the lower opening of the manifold 219 is in a sealed state, so the first cleaning process can also be performed safely.

[0148] As a processing condition in this step, an example can be given:

[0149] HF gas supply flow rate: 4000~6000sccm

[0150] Gas supply time: 3-10 minutes

[0151] Temperature inside the exhaust section: 50~100℃

[0152] Pressure inside the exhaust section: 1330Pa (10Torr)~101300Pa (atmospheres).

[0153] (4) Second cleaning process

[0154] If the above-described substrate treatment (batch processing), i.e., film formation treatment, is repeatedly performed, deposits containing thin films such as SiON films will accumulate inside the processing container, such as on the inner wall of the reaction tube 203, the surfaces of nozzles 249a and 249b, and the surface of the crystal boat 217. That is, deposits containing the aforementioned thin films adhere to and accumulate on the surfaces of components within the heated processing chamber 201. When the amount of the deposits, i.e., the accumulated film thickness, reaches a predetermined amount (thickness) before the deposits peel off and fall off, the processing container is cleaned. In this specification, the above-described treatment of the processing container is referred to as the "second cleaning treatment." The second cleaning treatment is performed, for example, every 300 to 500 batches, at a frequency lower than the frequency of the first cleaning treatment (every few batches, preferably every 1 batch). It should be noted that the frequency of the second cleaning treatment is higher than the frequency of the maintenance work on the exhaust section (every 2000 to 2500 batches). Hereinafter, an example of the second cleaning treatment in this embodiment will be described.

[0155] (Loading Crystal Boat)

[0156] After the aforementioned batch processing, i.e., the substrate processing from wafer filling to wafer removal, is performed for example, 300 to 500 times, the gate 219s is moved by the gate opening and closing mechanism 115s, opening the lower end opening of the current collector 209 (gate open). Then, the empty wafer boat 217 without wafers 200 is lifted by the wafer boat elevator 115 and carried into the processing chamber 201. In this state, the sealing cover 219 is in a state where the lower end of the current collector 209 is sealed by the O-ring 220b.

[0157] (Pressure and temperature regulation)

[0158] Vacuum exhaust is performed by vacuum pump 246 to achieve a predetermined pressure within the processing chamber 201. Vacuum pump 246 remains continuously operating at least until the second cleaning process is completed. Additionally, heating is performed by heater 207 to achieve a predetermined temperature within the processing chamber 201. Furthermore, rotation of crystal boat 217 is initiated using rotation mechanism 267. Heating of the processing chamber 201 by heater 207 and rotation of crystal boat 217 continue at least until the cleaning steps described later are completed. Alternatively, crystal boat 217 may not rotate.

[0159] (Cleaning steps)

[0160] Next, F2 gas, serving as a second cleaning gas, is supplied to the processing container after the film-forming process described above has been repeated. In this step, with valve 243b closed, the opening and closing of valves 243a, 243c, and 243d are controlled in the same manner as in step 1 of the film-forming process. The F2 gas flow rate is regulated using MFC 241a and supplied to the processing chamber 201 via gas supply pipe 232a and nozzle 249a.

[0161] As the F2 gas supplied into the processing chamber 201 passes through the chamber and exits through the exhaust pipe 231, it comes into contact with the surfaces of components within the chamber, such as the inner wall of the reaction tube 203, the surfaces of nozzles 249a and 249b, the surface of the crystal boat 217, the inner wall of the manifold 209, and the upper surface of the sealing cap 219. At this time, a thermochemical reaction (etching reaction) occurs between the F2 gas and the deposit, resulting in the removal of the deposit from the processing chamber 201.

[0162] As a processing condition in this step, an example can be given:

[0163] F2 gas supply flow rate: 4000~6000sccm

[0164] Gas supply time: 30-40 hours

[0165] Processing temperature: 350~450℃

[0166] Processing pressure: 1330Pa (10 Torr)~101300Pa (atmospheres).

[0167] In addition to F2, other gases that can be used as the second cleaning gas include chlorine fluoride (ClF3), nitrogen fluoride (NF3), and HF.

[0168] (Post-purging and atmospheric pressure recovery steps)

[0169] After the cleaning step is completed, valve 243a is closed to stop the supply of F2 gas to the treatment chamber 201. Additionally, the treatment chamber 201 is purged using the same process as the post-purging of the film-forming treatment (post-purging). Alternatively, the treatment chamber 201 can be purged intermittently by repeating the opening and closing of valves 243c and 243d (cyclic purging). Afterward, the atmosphere in the treatment chamber 201 is replaced with N2 gas (inactive gas replacement), and the pressure in the treatment chamber 201 returns to normal atmospheric pressure (atmospheric pressure recovery).

[0170] (Jingzhou Unloading)

[0171] Next, the sealing cover 219 is lowered using the crystal boat lift 115, the lower end of the manifold 209 is opened, and the empty crystal boat 217 is moved from the lower end of the manifold 209 to the outside of the reaction tube 203 (crystal boat unloading). After the crystal boat is unloaded, the gate 219s is moved, and the opening at the lower end of the manifold 209 is sealed by the gate 219s via the O-ring 220c. After the above series of processes are completed, the above film formation process is started again.

[0172] (5) Effects of this implementation method

[0173] According to this embodiment, one or more of the following effects can be obtained.

[0174] (a) By performing the first cleaning process more frequently than the second cleaning process, byproducts adhering to the exhaust section can be etched away in a small quantity before they become fixed. Furthermore, byproducts adhering to the exhaust section can be easily and reliably removed from the exhaust section. As a result, the maintenance frequency of the exhaust section can be reduced. For example, the frequency of replacing the vacuum pump 246 and the exhaust pipe 231e can be reduced compared to the frequency of performing the second cleaning process.

[0175] Figure 5 (a) A diagram illustrating an example of the maintenance frequency of the exhaust section without performing the first cleaning process. Figure 5 (b) A graph illustrating an example of the maintenance frequency of the exhaust section when the first cleaning treatment is performed in each batch. In these graphs, respectively, "numerical-numerical" represents the number of batch treatments performed (number of times at the start - number of times at the interruption), "C" represents the second cleaning treatment performed per specified batch (in this case, every 500 batches), "E" represents the first cleaning treatment performed per batch, and "P" represents exhaust section maintenance operations (pump replacement operation and exhaust pipe replacement operation).

[0176] As described above, the first cleaning process can be performed during the implementation of batch processing (e.g., in parallel with atmospheric pressure recovery), therefore, in Figure 5 In (b), for convenience, the time for the first cleaning process performed in each batch is expressed in the same manner as the batch processing time. Furthermore, as mentioned above, it is possible to make the exhaust pipe replacement frequency lower than the pump replacement frequency, but an example where both frequencies are the same is shown here. It should be noted that... Figure 5 (a) and Figure 5 (b) shows the maintenance frequency of the exhaust section from the implementation of the first batch processing to the implementation of the 2001st batch processing.

[0177] As shown in these figures, the maintenance frequency of the exhaust system after the first cleaning treatment (1 time / 2000 batches) is lower than that without the first cleaning treatment (1 time / 300 batches). Figure 5 In the example shown in (b), with Figure 5 Compared to the example shown in (a), the maintenance of the exhaust section can be reduced by 5 times. Since a pump replacement takes about 10 to 15 hours, by reducing the maintenance frequency of the exhaust section in the above manner, the downtime of the substrate processing device can be shortened, and its operating efficiency can be improved.

[0178] (b) The above-mentioned effects can be achieved more reliably by performing a first cleaning treatment in each batch (preferably each batch) between the end of the film-forming treatment and the start of the next film-forming treatment.

[0179] (c) The above-mentioned effects can be further and more reliably obtained by performing a first cleaning process during the period after the film-forming process is completed and before the wafer 200 that has undergone film-forming process is removed from the processing container in each batch (preferably each batch).

[0180] (d) By performing the first cleaning process with the APC valve 244 fully closed and the lower opening of the manifold 209 sealed, leakage of HF gas to the outside of the treatment container can be effectively prevented. This improves the safety of the first cleaning process.

[0181] (e) The same effect can be obtained when using a Si-containing gas other than HCDS as the feed gas, a N-containing gas other than NH3 as the nitriding agent, or an O-containing gas other than O2 as the oxidizing agent. Furthermore, the same effect can be obtained when using a gas other than HF as the first cleaning gas or a gas other than F2 as the second cleaning gas.

[0182] <Other Implementation Methods>

[0183] The embodiments of the present invention have been described above in detail. However, the present invention is not limited to the above embodiments, and various modifications can be made without departing from its spirit.

[0184] For example, the order of film formation is not limited to the embodiments described above. For example, when silicon oxide film (SiO film), silicon oxide carbon nitride film (SiOCN film), silicon oxide carbide film (SiOC film), etc. are formed on wafer 200 using the film formation sequence shown below, the same effect as the embodiments described above can be obtained by performing the first cleaning process at the above frequency.

[0185]

[0186]

[0187]

[0188] It should be noted that when performing the above-mentioned film-forming process for fabricating 3D devices such as 3D NAND, there is a tendency for the supply time of raw material gases such as HCDS gas to increase, or for the supply amount to increase. In this case, there is a tendency for the amount of by-products adhering to the exhaust section to increase, and for the maintenance frequency of the exhaust section to increase. To address this problem, the present invention, which can reduce the maintenance frequency of the exhaust section, is of great significance.

[0189] In the above embodiments, the byproducts adhering to the exhaust section mainly include SiO. x Examples have been described, but the byproducts of the first cleaning treatment of the present invention are not limited to the substances described above. For example, byproducts adhering to the exhaust section include ammonium chloride (NH4ClO) containing O. x In the case of substances such as ammonium chloride (NH4Cl), by performing the first cleaning process at the above frequency, the same effect as the above embodiment can be obtained.

[0190] In the above embodiments, the first cleaning process was mainly described in the example of cleaning the exhaust pipe 231e and the vacuum pump 246, but the components to be cleaned in the first cleaning process are not limited to these. For example, byproducts attached to the exhaust duct (the duct that connects the purifying device, not shown, to the vacuum pump 246) provided downstream of the vacuum pump 246 can also be efficiently removed by performing the first cleaning process at the above frequency.

[0191] Preferably, the processes used for substrate processing and cleaning are prepared separately according to the processing requirements and pre-stored in the storage device 121c via electrical communication lines and external storage device 123. Furthermore, preferably, when starting substrate processing or cleaning, the CPU 121a appropriately selects the appropriate process from among the multiple processes stored in the storage device 121c based on the processing requirements. This allows for the reproducible formation of films of various types, compositions, qualities, and thicknesses using a single substrate processing apparatus. Moreover, appropriate cleaning can be performed based on the deposits containing various films attached to the processing chamber 201 and the exhaust section. Furthermore, it reduces the operator's workload and allows for rapid initiation of substrate processing while avoiding operational errors.

[0192] The aforementioned process is not limited to newly fabricated cases. For example, it can be prepared by modifying an existing process already installed in the substrate processing apparatus. When changing the process, the modified process can be installed in the substrate processing apparatus via an electrical communication line or a recording medium containing the process. Furthermore, the existing process already installed in the substrate processing apparatus can be directly modified by operating the input / output device 122 of the existing substrate processing apparatus.

[0193] In the above embodiments, an example of forming a film using a batch substrate processing apparatus (processing multiple substrates at a time) has been described. However, the present invention is not limited to the above embodiments. For example, it is also preferably applicable to the case of forming a film using a monolithic substrate processing apparatus (processing one or more substrates at a time). Furthermore, in the above embodiments, an example of forming a film using a substrate processing apparatus with a hot-wall type processing furnace has been described. The present invention is not limited to the above embodiments, and it is also preferably applicable to the case of forming a film using a substrate processing apparatus with a cold-wall type processing furnace.

[0194] When using these substrate processing apparatuses, film formation can be performed using the same processing steps and conditions as in the above embodiments and variations, and the same effects can be obtained.

[0195] Furthermore, the above-described embodiments and variations can be used in appropriate combinations. The processing steps and conditions can then be set to be, for example, the same as those in the above-described embodiments.

[0196] Example

[0197] The following describes the embodiments.

[0198] As an example, using Figure 1 The substrate processing apparatus shown forms SiON films with a thickness in the range of 3 to 10 nm on multiple wafers using the same processing steps as the film deposition process in the above embodiment. When performing the film deposition process in one batch, the exhaust section is cleaned using the same start time and processing steps as the first cleaning process in the above embodiment before the wafers are removed from the processing container. The processing conditions in the film deposition process and the first cleaning process are set to predetermined conditions within the range of processing conditions in the above embodiments. During the first cleaning process, an FTIR analysis device provided in the exhaust section is used to observe the reaction between byproducts adhering to the exhaust section and the HF gas supplied to the exhaust section.

[0199] Figure 6 The results of observations obtained using an FTIR analysis apparatus are shown. Specifically, Figure 6 The horizontal axis represents the elapsed time (in minutes) since the start of the observation. Figure 6The vertical axis (left) represents the HF concentration (ppm) in the exhaust section. Figure 6 The vertical axis (right) represents the concentration (ppm) of SiF4 generated by the reaction of byproducts with HF gas in the exhaust section.

[0200] according to Figure 6 It is known that after HF gas is supplied to the exhaust section, the reaction between the byproducts and HF gas begins (the concentration of SiF4 increases), and this reaction converges after about 4 to 5 minutes (the concentration of SiF4 decreases). That is, when the first cleaning process is performed for each batch of the above film formation process, the cleaning in the exhaust section is completed in a short time of about 4 to 5 minutes. In other words, it is known that the first cleaning process can be completed within, for example, the time required for atmospheric pressure recovery in the processing container (e.g., about 30 minutes). Therefore, it is known that an increase in the total time required for substrate processing can be prevented, and a decrease in substrate processing productivity can be avoided.

Claims

1. A method for manufacturing a semiconductor device, comprising the following steps: A process of processing a substrate by supplying processing gas to a substrate inside a processing container and venting the gas from an exhaust section including an exhaust pipe. The process of directly supplying a first cleaning gas into the exhaust pipe from the supply port provided in the exhaust pipe, thereby cleaning the exhaust section; and The process of supplying a second cleaning gas into the processing container to clean the interior of the processing container. Specifically, the frequency of performing the cleaning process inside the exhaust section is higher than the frequency of performing the cleaning process inside the processing container. The process of cleaning the exhaust section is performed with the opening of the processing container for the substrate to enter and exit closed, and the exhaust valve located upstream of the portion of the exhaust pipe where the supply port is located closed.

2. The method for manufacturing a semiconductor device according to claim 1, wherein, The exhaust section also includes a pump. The manufacturing method also includes a step of replacing the pump.

3. The method for manufacturing a semiconductor device according to claim 1, further comprising a step of replacing the exhaust pipe. in, The frequency of performing the process of replacing the exhaust pipe is lower than the frequency of performing the process of cleaning the inside of the treatment container.

4. The method for manufacturing a semiconductor device according to claim 2, further comprising a step of replacing the exhaust pipe. in, The frequency of performing the process of replacing the exhaust pipe is lower than the frequency of performing the process of replacing the pump.

5. The method for manufacturing a semiconductor device according to claim 1, wherein, After each step of processing the substrate, a step of cleaning the venting section is performed. After each step of processing the substrate multiple times, a step of cleaning the processing container is performed.

6. The method for manufacturing a semiconductor device according to claim 1, wherein, A cleaning process is performed inside the venting section during the period between the completion of the substrate processing and the start of the next substrate processing.

7. The method for manufacturing a semiconductor device according to claim 1, wherein, The process of cleaning the exhaust section is performed while the substrate is housed in the processing container.

8. The method for manufacturing a semiconductor device according to claim 1, wherein, After the substrate processing is completed and before the processed substrate is removed from the processing container, a cleaning process is performed inside the exhaust section.

9. The method for manufacturing a semiconductor device according to claim 1, wherein, After the substrate processing is completed and the processed substrate is removed from the processing container, a cleaning process is performed inside the processing container.

10. The method for manufacturing a semiconductor device according to claim 1, wherein, During the cleaning process of the exhaust section, the opening is sealed.

11. The method for manufacturing a semiconductor device according to claim 1, wherein, During the cleaning process inside the exhaust section, the exhaust valve is completely closed.

12. The method for manufacturing a semiconductor device according to claim 1, wherein, The first cleaning gas contains hydrogen fluoride gas. The second cleaning gas includes fluorine gas, chlorine fluoride gas, nitrogen fluoride gas, or hydrogen fluoride gas.

13. The method for manufacturing a semiconductor device according to claim 1, wherein, In the process of processing the substrate, a film is formed on the substrate.

14. The method for manufacturing a semiconductor device according to claim 1, wherein, In the process of processing the substrate, a film comprising at least silicon and oxygen is formed on the substrate.

15. The method for manufacturing a semiconductor device according to claim 1, wherein, In the process of processing the substrate, a film comprising at least silicon and nitrogen is formed on the substrate.

16. The method for manufacturing a semiconductor device according to claim 1, wherein, In the process of processing the substrate, an oxide film is formed on the substrate.

17. The method for manufacturing a semiconductor device according to claim 1, wherein, In the process of processing the substrate, a nitride film is formed on the substrate.

18. A method for operating a substrate processing apparatus, comprising the following steps: A process of processing a substrate by supplying processing gas to a substrate inside a processing container and venting the gas from an exhaust section including an exhaust pipe. The process of directly supplying a first cleaning gas into the exhaust pipe from the supply port provided in the exhaust pipe, thereby cleaning the exhaust section; and The process of supplying a second cleaning gas into the processing container to clean the interior of the processing container. Specifically, the frequency of performing the cleaning process inside the exhaust section is higher than the frequency of performing the cleaning process inside the processing container. The process of cleaning the exhaust section is performed with the opening of the processing container for the substrate to enter and exit closed, and the exhaust valve located upstream of the portion of the exhaust pipe where the supply port is located closed.

19. A substrate processing apparatus, comprising: A processing container for performing substrate processing; A process gas supply system for supplying process gas to the substrate within the processing container; An exhaust section containing an exhaust pipe that discharges the processing gas supplied to the processing container; A first clean gas supply system that directly supplies first clean gas into the exhaust pipe from the supply port provided in the exhaust pipe; A second cleaning gas supply system for supplying a second cleaning gas into the processing container; and The control unit is configured to control the processing gas supply system, the exhaust section, the first cleaning gas supply system, and the second cleaning gas supply system to perform the following steps: supplying the processing gas to the substrate in the processing container and exhausting the gas from the exhaust section, thereby processing the substrate; and directly supplying the first cleaning gas into the exhaust pipe from the supply port provided in the exhaust pipe, thereby cleaning the exhaust section. The step of cleaning the processing container by supplying the second cleaning gas into the processing container, and the step of cleaning the exhaust section is performed more frequently than the step of cleaning the processing container, and the step of cleaning the exhaust section is performed with the opening of the processing container for the substrate to enter and exit closed, and the exhaust valve located upstream of the part of the exhaust pipe where the supply port is located closed.

20. A computer-readable recording medium having a program recorded thereon that causes a substrate processing apparatus to perform the following steps via a computer: The step of processing the substrate by supplying processing gas to the substrate in the processing container of the substrate processing apparatus and venting the gas from the exhaust section including the exhaust pipe. The step of directly supplying a first cleaning gas into the exhaust pipe from the supply port provided in the exhaust pipe, thereby cleaning the exhaust section; The step of supplying a second cleaning gas into the processing container to clean the inside of the processing container; A step in which the frequency of performing the step of cleaning the exhaust section is higher than the frequency of performing the step of cleaning the processing container; and The step of cleaning the exhaust section is performed with the opening of the processing container for the substrate to enter and exit closed, and the exhaust valve located upstream of the portion of the exhaust pipe where the supply port is located closed.

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