Digital metasurface infrared spectrum chip integrating photoelectric detection and sensing and preparation method

Abstract

The application relates to the technical field of trace molecule detection, in particular to a photoelectric detection and sensing integrated digital metasurface infrared spectrum chip and a preparation method thereof. The chip comprises, from bottom to top, a substrate, a metal reflection layer, a metal nanoparticle layer, a pyroelectric photosensitive layer and a digital metasurface structure layer; the digital metasurface structure layer is in a discrete pattern composed of a pixel array in the transverse direction of the device, the digital metasurface structure layer can excite surface plasmon resonance under the irradiation of preset light waves, the light field energy is localized in the target molecules and the pyroelectric photosensitive layer, so that the responsivity and sensing sensitivity of the infrared spectrum chip are improved; and the array coding of the discrete pattern of the digital metasurface structure layer is designed through a preset algorithm, so that the electric field intensity at the preset spatial position is enhanced. The chip has the advantages of high responsivity, high sensing sensitivity and high signal-to-noise ratio.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of trace molecule detection, and in particular to a photoelectric detection and sensing integrated digital metasurface infrared spectrum chip and a preparation method thereof. BACKGROUND

[0002] With the rapid development of human society, the national major fields such as biological medicine, food safety and environmental monitoring urgently need high-precision trace molecule detection technology. Since biomolecules carry rich biological information, ultra-high sensitivity trace biomolecule detection technology has special significance in the field of biomedicine. Infrared spectrum technology can directly detect molecular vibration modes, has unique advantages such as high "fingerprint" characteristics, no need for sample labeling, non-destructive in-situ detection, qualitative and quantitative analysis, and is a very potential on-site rapid spectrum detection technology, which has extremely important strategic significance for solving the common problems in the above-mentioned major fields. However, the traditional infrared spectrum technology has the problem of low sensitivity, and it cannot detect low-concentration biomolecules. The main reason is that the mid-infrared light wavelength (6~16 μm) is three orders of magnitude larger than the molecular size (<10 nm), which leads to extremely weak interaction between light and molecules, and it is extremely difficult to detect infrared spectrum signals.

[0003] The surface-enhanced infrared absorption spectrum technology uses the metal surface plasmon effect to localize the infrared light around the detector photosensitive layer and the measured molecules, enhances the interaction between the light and the molecules, and provides a new idea for breaking through the technical bottleneck of low detection sensitivity of the infrared spectrum system. However, the physical mapping relationship between the metasurface geometry structure and the electric field intensity distribution is high-dimensional and nonlinear, and it is difficult to directly obtain the direct function relationship between them. Therefore, the design of metasurface structure often relies on the experience of researchers, and the current technology still has the problem of insufficient sensing sensitivity, which seriously hinders the on-site rapid detection application of the technology. SUMMARY

[0004] The purpose of the present application is to provide a photoelectric detection and sensing integrated digital metasurface infrared spectrum chip and a preparation method thereof, which has the advantages of high response, high sensing sensitivity and high signal-to-noise ratio, and can be used in the fields of biological medicine, food safety and environmental monitoring.

[0005] In order to achieve the above-mentioned purpose, the technical solutions adopted by the present application are as follows:

[0006] In a first aspect, the present application provides a photoelectric detection and sensing integrated digital metasurface infrared spectrum chip, which comprises, from bottom to top, a substrate, a metal reflection layer, a metal nanoparticle layer, a pyroelectric photosensitive layer and a digital metasurface structure layer.

[0007] The metal reflection layer forms a resonant cavity structure with the pyroelectric photosensitive layer and the digital metasurface structure layer to improve the local electric field strength.

[0008] The metal nanoparticle layer is used to provide additional carrier injection for the pyroelectric photosensitive layer to improve the photoresponse performance.

[0009] The carriers inside the pyroelectric photosensitive layer can move directionally under the drive of the potential difference to form a photocurrent.

[0010] The digital metasurface structure layer forms a discretized pattern composed of a pixel array in the transverse direction of the device, and the specific pattern is determined by the array coding of a binary number, where "1" represents the presence of metal material and "0" represents the absence of metal material.

[0011] The digital metasurface structure layer can excite surface plasmon resonance under the irradiation of a preset light wave, localize the light field energy in the target molecules and the pyroelectric photosensitive layer, and improve the responsivity and sensing sensitivity of the infrared spectrum chip; and the array coding of the discretized pattern of the digital metasurface structure layer is designed by a preset algorithm to enhance the electric field strength at a preset spatial position.

[0012] In some embodiments, the size of a single pattern metasurface of the digital metasurface structure layer is 100-300 nm, the period ranges from 2000-4000 nm, and the thickness is 50-100 nm; the manufacturing material of the digital metasurface structure layer is selected from Au, Ag, or Cu.

[0013] In some embodiments, the preset algorithm is a genetic algorithm.

[0014] In some embodiments, the particle size of the metal nanoparticles in the metal nanoparticle layer is 50-100 nm, and the manufacturing material is selected from Au, Ag, or Pt.

[0015] In some embodiments, the thickness of the metal reflection layer is 50-200 nm, and the manufacturing material is selected from Au, Ag, Cu, or Al.

[0016] In some embodiments, the thickness of the pyroelectric photosensitive layer is 500-1000 nm, and the manufacturing material is selected from lithium niobate crystal, lithium tantalate crystal, barium strontium niobate crystal, or a tripeptide sulfate crystal.

[0017] In some embodiments, an adsorption layer is provided between the pyroelectric photosensitive layer and the digital metasurface structure layer, which can adsorb the digital metasurface structure layer to prevent it from falling off.

[0018] In a second aspect, the present application provides a preparation method of a digital metasurface infrared spectrum chip integrating photoelectric detection and sensing, which comprises the following steps:

[0019] S1, depositing a metal reflective layer on a substrate surface;

[0020] S2, laying metal nanoparticles on the metal reflective layer to form a metal nanoparticle layer;

[0021] S3, depositing a pyroelectric photosensitive material on the metal nanoparticle layer to form a pyroelectric photosensitive layer;

[0022] S4, using a preset algorithm to design an array code of the discretized pattern of the digital metasurface structure layer, spin-coating photoresist on the pyroelectric photosensitive layer, exposing and developing to obtain a reverse structure photoresist pattern of the digital metasurface structure layer;

[0023] S5, plating a metal film layer on the reverse structure photoresist pattern;

[0024] S6, removing the photoresist to form a digital metasurface structure layer, to obtain the photoelectric detection and sensing integrated digital metasurface infrared spectrum chip according to any one of claims 1-7.

[0025] In some embodiments, the array code of the discretized pattern of the digital metasurface structure layer designed by the preset algorithm specifically comprises:

[0026] Collecting sample data and iteratively updating the neural network model using the sample data, the sample data including pattern distribution data of the digital metasurface structure layer and electric field intensity distribution data corresponding to the pattern distribution of the digital metasurface structure layer calculated by simulation analysis software;

[0027] The genetic algorithm randomly generates a population code composed of a plurality of binary numbers, which corresponds to a random geometric structure of the digital metasurface structure layer;

[0028] Inputting the plurality of population codes into the neural network model to calculate the electric field intensity distribution of the photoelectric detection and sensing integrated digital metasurface infrared spectrum chip;

[0029] Selecting individual codes that meet the preset electric field intensity requirement from the population codes and deleting individual codes that do not meet the preset electric field intensity requirement;

[0030] Optimizing the selected individual codes by using a crossover operator and a mutation operator to form a new generation of population codes, inputting the new generation of population codes into the neural network model for the next iteration optimization until convergence, and obtaining the array code of the discretized pattern of the digital metasurface structure layer.

[0031] The beneficial effects of the present application are:

[0032] 1. The digital metasurface structure layer and the pyroelectric photosensitive layer are directly integrated longitudinally, the digital metasurface structure layer localizes the light field energy in the pyroelectric photosensitive layer and further converts the light-generated carriers, photoelectric detection and spectral sensing can be realized at the same time, thereby reducing the chip dark current and improving the signal-to-noise ratio.

[0033] 2. The application can design the corresponding digital metasurface structure layer for the target molecular vibration frequency through the preset algorithm, accurately control the light wave band that needs to be enhanced, thereby improving the detection sensitivity of the target molecule. The genetic algorithm is used to realize the control of the electric field intensity distribution of the digital metasurface structure layer, the electric field intensity near the pyroelectric photosensitive layer and the target molecule to be measured is improved, and the responsivity of the infrared spectrum chip and the detection sensitivity of the target molecule can be improved.

[0034] 3. The application adopts the metal reflection layer, the pyroelectric photosensitive layer and the digital metasurface structure layer to form a Fabry-Perot resonant cavity structure, which can further enhance the electric field intensity at the pyroelectric photosensitive layer, thereby improving the responsivity of the infrared spectrum chip.

[0035] 4. The photoelectric detection and sensing integrated digital metasurface infrared spectrum chip of the application adopts a bottom-up processing method, and the preparation method of the digital micro-nano structure is compatible with the standard photolithography process, and is easy to mass produce.

[0036] 5. The application can improve the photoelectric response and sensing performance of the device at the same time, has high signal-to-noise ratio, can be mass produced and has wide application prospect. BRIEF DESCRIPTION OF DRAWINGS

[0037] Figure 1 It is a cross-sectional schematic view of the photoelectric detection and sensing integrated digital metasurface infrared spectrum chip in the embodiment of the application;

[0038] Figure 2 It is a three-dimensional structure schematic view of the photoelectric detection and sensing integrated digital metasurface infrared spectrum chip in the embodiment of the application;

[0039] Figure 3 It is an array coding and corresponding structure schematic view of the digital metasurface structure layer in the embodiment of the application;

[0040] Figure 4 It is a preparation method flow chart of the photoelectric detection and sensing integrated digital metasurface infrared spectrum chip in the embodiment of the application;

[0041] Figure 5 It is a neural network model iteration update flow chart;

[0042] Figure 6 It is a neural network analysis of digital metasurface electric field intensity distribution schematic view;

[0043] Figure 7 This is a schematic diagram of the iterative optimization process of a genetic algorithm.

[0044] Figure 8 The absorption spectrum of the optimal digital metasurface structure in each iteration of the genetic algorithm.

[0045] Figure 9 SEM characterization images of digital metasurface structure layers;

[0046] Figure 10 The images show the detection spectra of protein molecules using spectral chips with and without digital metasurface structures.

[0047] In the figure, 10—metal reflective layer, 20—metal nanoparticle layer, 30—pyroelectric photosensitive layer, 40—digital metasurface structure layer, 50—adsorption layer, 60—target molecule to be measured, and 70—readout circuit. Detailed Implementation

[0048] The embodiments of the present invention will be described below with reference to the accompanying drawings and preferred embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be understood that the preferred embodiments are only for illustrating the present invention and not for limiting the scope of protection of the present invention.

[0049] It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. The drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0050] Example 1, see Figure 1 and Figure 2 As shown, a digital metasurface infrared spectroscopy chip integrating photoelectric detection and sensing includes a substrate, a metal reflective layer 10, a metal nanoparticle layer 20, a pyroelectric photosensitive layer 30, and a digital metasurface structure layer 40 arranged sequentially from bottom to top.

[0051] The metal reflective layer 10, together with the pyroelectric photosensitive layer 30 and the digital metasurface structure layer 40, forms a Fabry-Perot-like resonant cavity structure, which can further enhance the electric field intensity at the pyroelectric photosensitive layer 30, thereby improving the responsivity of the infrared spectral chip.

[0052] The metal nanoparticle layer 20 is used to provide additional carrier injection for the pyroelectric photosensitive layer to improve the light response performance. That is, when the energy of the hot electrons generated by the metal nanoparticles is higher than the Schottky barrier formed between the metal nanoparticle layer 20 and the pyroelectric photosensitive layer 30, the hot electrons will cross the barrier and inject into the pyroelectric photosensitive layer 30, providing additional carrier injection for the pyroelectric photosensitive layer 30, thereby improving the light response performance of the photodetector.

[0053] The carriers inside the pyroelectric photosensitive layer 30 can move directionally under the driving of the potential difference to form a photocurrent. That is, when infrared light waves are incident on the pyroelectric photosensitive layer 30, it will cause a change in the temperature of different surface positions of the material, thereby causing a rapid change in the spontaneous polarization inside the material, which macroscopically manifests as a potential difference between the upper and lower ends of the pyroelectric photosensitive layer 30. Under the driving of the potential difference, the photo-generated carriers inside the pyroelectric photosensitive layer 30 and the additional carriers provided by the metal nanoparticle layer 20 all move directionally to form a photocurrent.

[0054] Referring to FIGS. 1 and 2, Figure 2 and Figure 3 As shown, the digital metasurface structure layer 40 is in a discretized pattern composed of a pixel array in the transverse direction of the device, and the specific pattern is determined by the array coding of a binary number, where "1" represents the presence of metal material and "0" represents the absence of metal material. The digital metasurface structure layer 40 can excite surface plasmon resonance under the irradiation of a preset light wave, localize the light field energy in the target molecule and the pyroelectric photosensitive layer 30, to improve the responsivity and sensing sensitivity of the infrared spectral chip; and the array coding of the discretized pattern of the digital metasurface structure layer 40 is designed by a preset algorithm to enhance the electric field strength at a preset spatial position.

[0055] The present application designs a corresponding digital metasurface structure layer 40 for the target molecule vibration frequency by a preset algorithm, accurately controls the light wave band that needs to be enhanced, and thereby improves the detection sensitivity of the target molecule.

[0056] In some embodiments, the thickness of the metal reflection layer 10 is 50-200 nm, and the manufacturing material is selected from Au, Ag, Cu or Al. The particle size of the metal nanoparticles in the metal nanoparticle layer 20 is 50-100 nm, and the manufacturing material is selected from Au, Ag or Pt. The thickness of the pyroelectric photosensitive layer 30 is 500-1000 nm, and the manufacturing material is selected from lithium niobate crystal, lithium tantalate crystal, barium strontium niobate crystal or tripeptide sulfate crystal. The size of a single pattern metasurface of the digital metasurface structure layer 40 is 100-300 nm, the period ranges from 2000 to 4000 nm, and the thickness is 50-100 nm; and the manufacturing material of the digital metasurface structure layer is selected from Au, Ag or Cu.

[0057] For example, in this embodiment, the metal reflective layer 10 has a thickness of 100 nm and is made of Au. The metal nanoparticle layer 20 has a particle size of 65 nm and is also made of Au. The pyroelectric photosensitive layer 30 has a thickness of 700 nm and is made of niobium lithium oxide crystal. The digital metasurface structure layer 40 has a single patterned metasurface size of 100 nm, a period of 2200 nm, a thickness of 50 nm, and is made of Au.

[0058] In some embodiments, the preset algorithm is a genetic algorithm. This application uses a genetic algorithm to control the electric field intensity distribution of the digital metasurface structure layer 40, which improves the electric field intensity near the pyroelectric photosensitive layer 30 and the target molecule, thereby improving the responsivity of the infrared spectroscopy chip and the detection sensitivity of the target molecule.

[0059] In some embodiments, an adsorption layer 50 is provided between the pyroelectric photosensitive layer 30 and the digital metasurface structure layer 40. The adsorption layer 50 can adsorb the digital metasurface structure layer 40 to solve the problem of poor adhesion between the digital metasurface structure layer 40 and the pyroelectric photosensitive layer 30, and prevent the metal metasurface from falling off during subsequent device fabrication and use.

[0060] In some embodiments, the digital metasurface infrared spectroscopy chip integrating photoelectric detection and sensing further includes a readout circuit 70. The readout circuit 70 converts weak current, voltage, or resistance changes in the chip into electrical signals that can be processed by subsequent signal processing circuits.

[0061] Example 2, as Figure 4 As shown, this application provides a method for fabricating a digital metasurface infrared spectral chip integrating photoelectric detection and sensing, which includes the following steps:

[0062] S1, deposit a metal reflective layer 10 on the substrate surface. A metal reflective layer is deposited on the silicon substrate surface using methods such as atomic layer deposition, magnetron sputtering, and vacuum evaporation. For example, in this embodiment, a gold reflective layer is deposited on a clean silicon substrate surface using magnetron sputtering.

[0063] S2, metal nanoparticles are deposited on the metal reflective layer 10 to form a metal nanoparticle layer 20. Exemplarily, gold nanoparticles are prepared on the gold reflective layer using a thermal annealing process, and the prepared gold nanoparticles are uniformly deposited on the gold reflective layer.

[0064] S3, deposit pyroelectric photosensitive material on metal nanoparticle layer 20 and ensure high surface flatness to form pyroelectric photosensitive layer 30.

[0065] S4. The array encoding of the discrete pattern of the digital metasurface structure layer 40 is designed using a preset algorithm. Photoresist is spin-coated on the pyroelectric photosensitive layer 30 and exposed and developed by electron beam lithography to obtain the reverse structure photoresist pattern of the digital metasurface structure layer 40.

[0066] S5, deposit a gold film layer on the reverse structure photoresist pattern using a vacuum evaporation method;

[0067] S6, the photoresist is removed by liquid phase stripping to form a digital metasurface structure layer, and the readout circuit 70 is integrated to obtain the digital metasurface infrared spectroscopy chip integrating photoelectric detection and sensing as described in Example 1.

[0068] In some embodiments, before performing S5, a chromium layer is deposited on the reverse structure photoresist pattern using a vacuum evaporation method as an adsorption layer 50.

[0069] In some implementations, the array encoding of the discretized pattern of the digital metasurface structure layer using a preset algorithm specifically includes:

[0070] First, construct a neural network model that meets the accuracy requirements, collect sample data, and use the sample data to iteratively update the neural network model. See [link to documentation]. Figure 6 As shown, the sample data includes the pattern distribution data of the digital metasurface structure layer, and the electric field intensity distribution data corresponding to the pattern distribution of the digital metasurface structure layer, calculated by simulation analysis software. The electric field intensity distribution data includes electric field intensity distribution data in different directions, for example... Figure 6 The electric field intensity distributions of the xy and xz sections are shown below; see also... Figure 5 As shown, it includes the following steps:

[0071] 1) Establish a neural network model and build a database using the FDTD finite element method. This database includes the graphic distribution data of the digital metasurface structure layer and the electric field intensity distribution data corresponding to the graphic distribution of the digital metasurface structure layer, which are calculated by simulation analysis software.

[0072] 2) Set the training parameters for the neural network model.

[0073] 3) Input sample data from the database into the neural network model, select ReLU function as the activation function for the output layer of the neural network model, select Adam as the optimizer, and solve for the parameters of the neural network model.

[0074] 4) Identify the number of iterations. If the number of iterations reaches the preset value, proceed to step 6. If the number of iterations is less than the preset value, proceed to step 5. For example, the preset value is 10,000 times.

[0075] 5) Calculate the neuron error in the neural network model, solve the gradient difference, update the weight value, and then select sample data from the database and input it into the neural network model.

[0076] 6) The training is completed, the neural network model is verified, and a neural network model that meets the accuracy requirements is obtained. The neural network model is used to analyze the electric field intensity distribution of the digital metasurface structure layer with different pattern distributions.

[0077] Secondly, the array coding of the digital metasurface structure layer is obtained by iterative updating using a genetic algorithm, as shown in Figure 7 as shown, comprising the following steps:

[0078] 1) Determine the structure parameters and the fitness function, and randomly generate a group of binary numbers to form a population coding, i.e. initialize the population coding. The population coding corresponds to a random geometric structure of the digital metasurface structure layer.

[0079] 2) Obtain the electric field distribution corresponding to the population coding using a deep learning algorithm. Input several population codings into a neural network model that meets the accuracy requirements, and calculate the electric field intensity distribution corresponding to the array coding.

[0080] 3) Select individual codings that meet the preset electric field intensity requirements from the population coding according to the fitness function, and delete individual codings that do not meet the preset electric field intensity requirements.

[0081] 4) Optimize the selected individual codings through crossover and mutation operators to form a new generation of population codings, and input the new generation of population codings into the neural network model for the next iteration optimization until convergence, obtaining the array coding of the digital metasurface structure layer.

[0082] In this embodiment, the antibody IgG protein molecule is taken as the target molecule, and the neural network and genetic algorithm are combined to realize the design of the digital metasurface structure layer 2. Specifically, first, the algorithm randomly generates 30 initial population codings, which correspond to the random geometric structure of the metasurface. These population codings are sequentially transmitted to the neural network model that meets the accuracy requirements to calculate the electric field intensity distribution of the chip. Next, the genetic algorithm selects high-quality individual codings from the population codings and deletes low-quality individual codings. The protein molecule amide I resonance wavelength is 6 μm, and the high-quality individual coding refers to the digital metasurface with a higher electric field intensity value at 6 μm. Then the individual codings are optimized through crossover and mutation operators. After running the crossover and mutation operators, the new generation of population is transmitted to the deep learning neural network model for the next iteration optimization, and the optimization process continues until convergence.

[0083] Figure 8The absorption spectrum of the optimal digital metasurface structure in each iteration of the genetic algorithm. The genetic algorithm is run with the electric field intensity of the protein molecule at 6 pm as the objective function. As the iteration increases, the fitness function value rises continuously, and converges when the calculation reaches the 5th generation. As the absorption rate converges, the genetic algorithm iteration is automatically stopped. With the increase of the number of iterations, the absorption rate of the digital metasurface shows an upward trend, and the absorption rate of the 5th generation digital metasurface at 6 pm is about 375% higher than that of the 1st generation. This shows that the genetic optimization algorithm has good convergence in the multivariate optimization problem, has high efficiency and accuracy, and can effectively optimize the performance of the metasurface structure. In this example, the digital metasurface structure designed by the genetic algorithm is processed, Figure 9 The SEM characterization figure of the metasurface result is shown.

[0084] In this example, the antibody IgG protein molecule is used as a probe molecule, and its aqueous solution is sprayed onto the sample, and then physically adsorbed on the surface of the infrared spectrum chip, Figure 10 The detection spectrum of the protein molecule by the spectrum chip with the digital metasurface structure and the spectrum chip without the metasurface structure. When the surface plasmon resonance frequency is consistent with the vibration mode frequency of the biological molecule, due to the coupling effect of plasmons and molecules, a recess or protrusion is generated in the device transmission spectrum at the molecular vibration mode frequency. As can be seen from the extracted molecular signal, due to the digital metasurface taking the electric field intensity at the amide I vibration mode as the fitness function, the detection signal intensity of amide I by the infrared spectrum chip is higher than that of amide II. In addition, when the protein molecule is adsorbed on the control chip without the metasurface, the absorption peaks of amide I and II are submerged in the background noise. It shows that the designed and prepared digital metasurface spectrum chip has the advantages of high responsivity and high sensing sensitivity, and can realize photoelectric detection and spectral sensing at the same time.

[0085] The above examples are only preferred embodiments for fully illustrating the present application, and the protection scope of the present application is not limited thereto. Any equivalent replacement or transformation of the present application made by those skilled in the art on the basis of the present application is within the protection scope of the present application.

Claims

1. A digital metasurface infrared spectroscopy chip integrating photoelectric detection and sensing, characterized in that: It includes, from bottom to top, a substrate, a metal reflective layer, a metal nanoparticle layer, a pyroelectric photosensitive layer, and a digital metasurface structure layer; The metal reflective layer, together with the pyroelectric photosensitive layer and the digital metasurface structure layer, forms a resonant cavity structure to improve the local electric field strength. The metal nanoparticle layer is used to provide additional carrier injection to the pyroelectric photosensitive layer to improve photoresponse performance; The charge carriers inside the pyroelectric photosensitive layer can move directionally under the drive of the potential difference to form a photocurrent. The digital metasurface structure layer is a discrete pattern composed of pixel arrays in the transverse direction of the device. The specific pattern is determined by an array encoding composed of binary numbers, where "1" represents the presence of metal material and "0" represents the absence of metal material. The digital metasurface structure layer can excite surface plasmon resonance under preset light wave irradiation, localizing the light field energy within the target molecule and the pyroelectric photosensitive layer to improve the responsivity and sensing sensitivity of the infrared spectroscopy chip; and by designing the array encoding of the discretized pattern of the digital metasurface structure layer through a preset algorithm, the electric field intensity at the preset spatial location is enhanced.

2. The digital metasurface infrared spectroscopy chip integrating photoelectric detection and sensing according to claim 1, characterized in that: The digital metasurface structure layer has a single patterned metasurface size of 100~300nm, a period range of 2000~4000nm, and a thickness of 50~100nm; The material used to manufacture the digital metasurface structure layer is selected from Au, Ag, or Cu.

3. The digital metasurface infrared spectroscopy chip integrating photoelectric detection and sensing according to claim 1, characterized in that: The preset algorithm is a genetic algorithm.

4. The digital metasurface infrared spectroscopy chip integrating photoelectric detection and sensing according to claim 1, characterized in that: The metal nanoparticles in the metal nanoparticle layer have a particle size of 50~100nm, and the manufacturing material is selected from Au, Ag or Pt.

5. The digital metasurface infrared spectroscopy chip integrating photoelectric detection and sensing according to claim 1, characterized in that: The thickness of the metal reflective layer is 50~200nm, and the manufacturing material is selected from Au, Ag, Cu or Al.

6. The digital metasurface infrared spectroscopy chip integrating photoelectric detection and sensing according to claim 1, characterized in that: The thickness of the pyroelectric photosensitive layer is 500~1000nm, and the manufacturing material is selected from: niobium lithium oxide crystal, lithium tantalate crystal, barium strontium niobate crystal or triglycine sulfate crystal.

7. The digital metasurface infrared spectroscopy chip integrating photoelectric detection and sensing according to claim 1, characterized in that: An adsorption layer is provided between the pyroelectric photosensitive layer and the digital metasurface structure layer. This adsorption layer can adsorb the digital metasurface structure layer and prevent it from falling off.

8. A method for fabricating a digital metasurface infrared spectral chip integrating photoelectric detection and sensing, characterized in that, Includes the following steps: S1, deposit a metal reflective layer on the substrate surface; S2, metal nanoparticles are laid on the metal reflective layer to form a metal nanoparticle layer; S3, deposit pyroelectric photosensitive material on the metal nanoparticle layer to form a pyroelectric photosensitive layer; S4. The array encoding of the discrete pattern of the digital metasurface structure layer is designed using a preset algorithm. Photoresist is spin-coated on the pyroelectric photosensitive layer, exposed and developed to obtain the reverse structure photoresist pattern of the digital metasurface structure layer. S5, deposit a metal film layer on the reverse structure photoresist pattern; S6, remove the photoresist to form a digital metasurface structure layer, and obtain the digital metasurface infrared spectral chip integrating photoelectric detection and sensing as described in any one of claims 1 to 7.

9. The method for fabricating a digital metasurface infrared spectral chip integrating photoelectric detection and sensing according to claim 8, characterized in that, The array encoding of discretized patterns for digital metasurface structure layers, designed using a pre-defined algorithm, specifically includes: Collect sample data and use the sample data to iteratively update the neural network model. The sample data includes the graphic distribution data of the digital metasurface structure layer and the electric field intensity distribution data corresponding to the graphic distribution of the digital metasurface structure layer, which is calculated by simulation analysis software. A genetic algorithm randomly generates a population code consisting of several binary numbers, which corresponds to the random geometric structure of the digital metasurface structure layer. Several group codes are input into a neural network model to calculate the electric field intensity distribution of a digital metasurface infrared spectroscopy chip that integrates photoelectric detection and sensing. Select individual codes that meet the preset electric field strength requirements from the group codes, and delete individual codes that do not meet the preset electric field strength requirements; The selected individual codes are optimized by using crossover and mutation operators to form a new generation of population codes. The new generation of population codes is then input into the neural network model for the next iteration of optimization until convergence, resulting in an array code of the discretized pattern of the digital metasurface structure layer.

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