A non-sintered laminated sheet device and a method for manufacturing the same, a light emitting semiconductor device and a method for packaging the same

Abstract

This invention belongs to the field of light-emitting semiconductor technology, specifically relating to a non-sintered multilayer device and its fabrication method, and a light-emitting semiconductor device and its fabrication method. The invention involves mixing a first silicone rubber, a first inhibitor, and a first fluoride phosphor to obtain a base layer mixture; mixing a second silicone rubber, a second inhibitor, a second phosphor, and a fluoride phosphor to obtain a multilayer mixture; and then layering several unit preforms onto the surface of a substrate to obtain a shaped preform; the shaped preform is then cured to obtain a non-sintered multilayer device; the curing temperature is 150–250°C. This invention employs a non-sintering method, requiring less equipment, simplifying the process, and shortening the cycle time. It also effectively solves the problem of fluorides being susceptible to moisture; simultaneously, it addresses the shrinkage and non-forming characteristics of the adhesive during sintering, achieving mutual excitation of each layer while protecting the phosphor's luminescence. Since sintering is not required, the process can be completed independently within a packaging company.

Description

Technical Field

[0001] This invention belongs to the field of light-emitting semiconductor technology, specifically relating to a non-sintering stacked wafer device and its preparation method, and a light-emitting semiconductor device and its packaging method. Background Technology

[0002] In light-emitting semiconductor packaging, silicate phosphors, YAG (yttrium aluminum garnet), and nitride phosphors are commonly used. With increasing demands for high luminous efficacy and high color rendering index (CRI), the application of fluoride phosphors has become crucial. The addition of fluoride phosphors improves the CRI to above R95 and increases brightness by 10-20%. However, while fluoride phosphors offer advantages in increasing brightness and narrowing half-wavelength, they also have significant drawbacks, such as susceptibility to moisture. Therefore, moisture resistance has become a critical technical challenge in packaging technology.

[0003] Chinese patent CN106219990A, entitled "Microcrystalline Glass for Double-Layer Phosphor Substrates and Preparation Method Thereof," discloses a process for producing microcrystalline glass for double-layer phosphor substrates, including sintering, slicing, and fabrication steps. Specifically, the process includes: Step 1, accurately weighing the raw materials according to the glass matrix ratio and placing them in an agate mortar, mixing and grinding them evenly, then placing them in a crucible and heating the raw material powder to melt it; Step 2, removing the glass melt and quickly pouring it into a mold to form a block-shaped precursor glass; Step 3, breaking the obtained precursor glass, grinding it evenly in an agate mortar, adding phosphor powder, grinding it further, placing it in a crucible, heating the glass powder to melt it, removing the glass melt and quickly pouring it into a mold to form a block-shaped microcrystalline glass; Step 4, annealing the microcrystalline glass obtained in Step 3 in a resistance furnace to eliminate internal stress, and then cutting and polishing it to obtain microcrystalline glass of the required size. In Step 1, the melting temperature of the raw material powder is 1200-1300℃, and the holding time is 1-3 hours. In step 3, the melting temperature of the glass powder is 650-700℃, and the holding time is 1-3 hours. Although the above technical solution can solve the moisture resistance problem of fluoride phosphors, the use of sintered phosphors, whether single-layer, double-layer, or multi-layer films, all require a high-temperature sintering process, which involves high equipment temperatures and a high risk factor.

[0004] Most importantly, microcrystalline glass is sintered in glass sintering plants, while semiconductor packaging is done in semiconductor packaging companies. Since microcrystalline glass emits a variety of colors and temperatures, semiconductor packaging companies and sintering manufacturers need to communicate and adjust multiple times to obtain the desired color. Furthermore, due to the low sintering efficiency, the packaging process of light-emitting semiconductors cannot be completed independently by semiconductor packaging companies, thus preventing them from being quickly adopted by packaging plants and severely impacting the production efficiency of semiconductor packaging companies. Summary of the Invention

[0005] The purpose of this invention is to provide a non-sintering multilayer device and its preparation method, and a light-emitting semiconductor device and its packaging method. The non-sintering multilayer device prepared by this invention adopts a non-sintering method, which not only requires less equipment, has simpler processes and shorter cycles, but also effectively solves the problem of fluorides being susceptible to moisture. At the same time, it solves the problems of adhesive shrinkage and non-forming properties, achieving the effect of mutual excitation of each layer and protection of the product, and can be completed independently in packaging companies.

[0006] To achieve the above objectives, the present invention provides the following technical solution:

[0007] This invention provides a method for fabricating a non-sintering stacked layer device, comprising the following steps:

[0008] A base layer composite material is obtained by mixing a first silica gel, a first inhibitor, and a first fluoride phosphor. The base layer composite material comprises the following components in parts by weight: 1-35 parts of the first silica gel, 1-3 parts of the first inhibitor, and 1-62 parts of the first fluoride phosphor. The temperature resistance of the first silica gel is ≥260℃, and the volatilization point of the first inhibitor is ≤150℃.

[0009] A second silica gel, a second inhibitor, and a second phosphor are mixed, wherein the second phosphor includes one or more of silicate phosphor, nitride phosphor, aluminate phosphor, and second fluoride phosphor to obtain a superimposed layer composite material. The superimposed layer composite material comprises the following components in parts by weight: 1-25 parts of the second silica gel, 1-3 parts of the second inhibitor, and 1-72 parts of the second phosphor; the temperature resistance of the second silica gel is ≥260℃, and the volatilization point of the second inhibitor is ≤150℃.

[0010] Several unit blanks are laminated on the surface of a carrier to obtain a shaped blank; the preparation method of each unit blank includes: sequentially coating the base layer mixed material and the superimposed layer mixed material to form the base layer and the superimposed layer respectively, thereby obtaining one unit blank;

[0011] The molded preform is cured to obtain a non-sintered stacked layer device; the curing temperature is 150-250℃.

[0012] Preferably, the wavelength of the first fluoride phosphor is 625–635 nm;

[0013] The thickness of a single layer of base mixed material in a single unit blank is 10–200 μm.

[0014] Preferably, the wavelengths of the silicate phosphor and the aluminate phosphor are independently 490–590 nm; the wavelengths of the second fluoride phosphor and the nitride phosphor are independently 600–675 nm.

[0015] Preferably, the thickness of a single layer of the composite material in a single unit blank is 10–300 μm.

[0016] Preferably, the preparation method further includes: mixing a third silica gel and a light-diffusing powder to obtain a protective layer mixture material, wherein the temperature resistance of the third silica gel is ≥260℃ and the temperature resistance of the light-diffusing powder is ≥260℃;

[0017] The preparation method for each unit blank is replaced by: sequentially coating the base layer mixture material, the superimposed layer mixture material, and the protective layer mixture material to form the base layer, superimposed layer, and protective layer, respectively, to obtain one unit blank.

[0018] Preferably, the mass ratio of the third silica gel to the diffuser powder is (90-95):(2-5);

[0019] The thickness of a single layer of protective layer mixed material in a single unit preform is 5–500 μm.

[0020] The present invention provides a non-sintering stacked wafer device obtained by the preparation method described above, comprising a plurality of light-emitting units stacked on a carrier wafer, each light-emitting unit comprising a base layer 11 and a stacked layer 10 disposed on a surface of the base layer 11.

[0021] Preferably, the light-emitting unit further includes a protective layer 9 disposed on the outer surface of the superimposed layer 11.

[0022] This invention provides a light-emitting semiconductor device, comprising a carrier substrate 1; a plurality of semiconductor wafers 2 disposed on the surface of the carrier substrate 1; a non-sintered stacked wafer device 3 disposed on the surface of the plurality of semiconductor wafers 2; a reflective wall 4 disposed on the surface of the carrier substrate 1 and surrounding the periphery of the plurality of semiconductor wafers 2; a powder layer disposed within a closed space formed by the reflective wall; the height of the powder layer being greater than or equal to the total height of the non-sintered stacked wafer device 3 and the semiconductor wafers 2; the non-sintered stacked wafer device 3 being the non-sintered stacked wafer device described in the above technical solution.

[0023] This invention provides a packaging method for the light-emitting semiconductor device described above, comprising the following steps:

[0024] The non-sintering stacked wafer device described in the above technical solution is bonded to the surface of a plurality of semiconductor wafers 2; the semiconductor wafers 2 are bonded to the surface of the carrier substrate 1;

[0025] A reflective wall 4 is provided on the surface of the carrier substrate 1 along the periphery of several semiconductor wafers 2 using a reflective wall material;

[0026] Powder is filled into the closed space formed by the reflective wall 4 to obtain a powder layer; the height of the powder layer is greater than or equal to the total height of the non-sintered stacked wafer device 3 and the semiconductor wafer 2 to obtain the light-emitting semiconductor device.

[0027] This invention provides a method for fabricating a non-sintered multilayer device, comprising the following steps: mixing a first silicone rubber, a first inhibitor, and a first fluoride phosphor to obtain a base layer mixture material; the base layer mixture material comprises the following components in parts by weight: 1-35 parts of the first silicone rubber, 1-3 parts of the first inhibitor, and 1-62 parts of the first fluoride phosphor; the temperature resistance of the first silicone rubber is ≥260℃, and the volatilization point of the first inhibitor is ≤150℃; mixing a second silicone rubber, a second inhibitor, and a second phosphor, wherein the second phosphor comprises one or more of silicate phosphor, nitride phosphor, aluminate phosphor, and second fluoride phosphor. A composite material is obtained, comprising the following components in parts by mass: 1-25 parts of second silicone, 1-3 parts of second inhibitor, and 1-72 parts of second phosphor; the second silicone has a temperature resistance ≥260℃, and the second inhibitor has a volatilization point ≤150℃; several unit preforms are laminated on the surface of a substrate to obtain a shaped preform; the preparation method of each unit preform includes: sequentially coating the base layer composite material and the composite material to form a base layer and a composite layer respectively, to obtain one unit preform; the shaped preform is cured to obtain a non-sintered composite device; the curing temperature is 150-250℃. The preparation method provided by this invention uses an adhesive (including a first silicone and a second silicone) with good temperature resistance. When using a non-sintering method, the adhesive will not decompose or volatilize during the curing process. The first and second inhibitors can prevent the silicone components from binding during the coating process, thus achieving good adhesion and molding properties. After the coating process is completed and cured, the inhibitors can also prevent the silicone from shrinking due to force release. At the same time, the inhibitors volatilize during the curing process. Thus, through curing, the phosphor in the base layer and the silicate phosphor in the overlay layer are cured into an integral structure using the first and second silicone. The second phosphor in the overlay layer protects the fluoride phosphor in the base layer and can also mutually excite the fluoride phosphor in the base layer. This not only effectively solves the problem of fluorides being susceptible to moisture, but also ensures that the color concentration of the device prepared by this invention meets the requirements after light irradiation. In summary, this invention employs a non-sintering method, effectively solving the problem of fluorides' susceptibility to moisture. It not only requires less equipment, simplifies the process, and shortens the cycle time, but also effectively addresses the moisture sensitivity of fluorides. Simultaneously, it overcomes the shrinkage and non-formation characteristics of the adhesive during sintering, achieving mutual excitation between each layer of the stacked structure and protecting the phosphor's luminescence. Furthermore, since sintering is not required, the process can be independently completed within packaging companies. The results of the embodiments show that the cost of a single stacked layer device prepared by the method provided by this invention is 80-90% lower than that of commercially available finished products, effectively reducing material waste and production costs. Moreover, the debugging and fabrication cycle time for the light-emitting semiconductor device is reduced from 45 days to within 3 days.

[0028] Furthermore, in this invention, the wavelength of the first fluoride phosphor is 625–635 nm; the single-layer coating thickness of the base layer mixture material in one unit blank is 10–200 μm, and the wavelengths of the silicate phosphor and the aluminate phosphor are independently 490–590 nm; the wavelengths of the second fluoride phosphor and the nitride phosphor are independently 600–675 nm; and the single-layer coating thickness of the superimposed layer mixture material in one unit blank is 10–300 μm. Since the transmittance of light is affected by the thickness of the base layer and the superimposed layers, as well as the mass ratio of the components in each layer, when light irradiates the superimposed layer device, this invention, by controlling the luminescent characteristics, mass ratio, and single-layer thickness of the raw materials in the base layer mixture material and the superimposed layer mixture material, can achieve a superimposed layer device with the required color concentration without sintering. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of the non-sintering stacked layer device prepared according to the present invention;

[0030] Figure 2 This is a schematic diagram of the structure of the light-emitting semiconductor device prepared according to the present invention;

[0031] Figure 1 and Figure 2 In the diagram: 1 is the carrier substrate, 2 is the semiconductor wafer, 3 is the non-sintered stacked layer device, 4 is the reflective wall, 5 is the protective layer, 6 is the light-shielding layer, 7 is the first adhesive, 8 is the second adhesive, 9 is the protective layer, 10 is the stacked layer, and 11 is the base layer. Detailed Implementation

[0032] This invention provides a method for fabricating a non-sintering stacked layer device, comprising the following steps:

[0033] A base layer composite material is obtained by mixing a first silica gel, a first inhibitor, and a first fluoride phosphor. The base layer composite material comprises the following components in parts by weight: 1-35 parts of the first silica gel, 1-3 parts of the first inhibitor, and 1-62 parts of the first fluoride phosphor. The temperature resistance of the first silica gel is ≥260℃, and the volatilization point of the first inhibitor is ≤150℃.

[0034] A second silica gel, a second inhibitor, and a second phosphor are mixed, wherein the second phosphor includes one or more of silicate phosphor, nitride phosphor, aluminate phosphor, and second fluoride phosphor to obtain a superimposed layer composite material. The superimposed layer composite material comprises the following components in parts by weight: 1-25 parts of the second silica gel, 1-3 parts of the second inhibitor, and 1-72 parts of the second phosphor; the temperature resistance of the second silica gel is ≥260℃, and the volatilization point of the second inhibitor is ≤150℃.

[0035] Several unit blanks are laminated on the surface of a carrier to obtain a shaped blank; the preparation method of each unit blank includes: sequentially coating the base layer mixed material and the superimposed layer mixed material to form the base layer and the superimposed layer respectively, thereby obtaining one unit blank;

[0036] The molded preform is cured to obtain a non-sintered stacked layer device; the curing temperature is 150-250℃.

[0037] In this invention, unless otherwise specified, all raw materials / components used in the preparation are commercially available products well known to those skilled in the art.

[0038] This invention mixes a first silica gel, a first inhibitor, and a first fluoride phosphor to obtain a base layer composite material. The base layer composite material comprises the following components in parts by weight: 1-35 parts of the first silica gel, 1-3 parts of the first inhibitor, and 1-62 parts of the first fluoride phosphor. The first silica gel has a temperature resistance ≥260℃, and the first inhibitor has a volatilization point ≤150℃. In this invention, the temperature resistance of the first silica gel is preferably 260-300℃. The volatilization point of the first inhibitor is preferably 100-150℃. The first silica gel is preferably purchased from Shin-Etsu Chemical Co., Ltd. or DuPont, and the product model is KER series or OE series. The first inhibitor is preferably purchased from DuPont, and the product model is O series. The wavelength of the first fluoride phosphor is preferably 625-635nm. The base layer composite material preferably comprises the following components in parts by weight: 2-30 parts of first silica gel, 1-2 parts of first inhibitor, and 5-60 parts of first fluoride phosphor; more preferably, it comprises the following components in parts by weight: 5-25 parts of first silica gel, 1-1.5 parts of first inhibitor, and 10-60 parts of first fluoride phosphor. The present invention does not impose special requirements on the specific implementation process of the mixing.

[0039] This invention mixes a second silica gel, a second inhibitor, and a second phosphor. The second phosphor includes one or more of silicate phosphors, nitride phosphors, aluminate phosphors, and second fluoride phosphors to obtain a superimposed layer composite material. The superimposed layer composite material comprises the following components in parts by weight: 1-25 parts of the second silica gel, 1-3 parts of the second inhibitor, and 1-72 parts of the second phosphor. The second silica gel has a temperature resistance ≥260℃, and the first inhibitor has a volatilization point ≤150℃. In this invention, the temperature resistance of the second silica gel is preferably 260-300℃. The volatilization point of the second inhibitor is preferably 100-150℃. The second silica gel is preferably purchased from Shin-Etsu Chemical Co., Ltd. or DuPont, and the product model is KER series or OE series. The second inhibitor is preferably purchased from DuPont, and the product model is O series. The wavelengths of the silicate phosphor and the aluminate phosphor are independently preferably 490-590nm, more preferably 500-550nm. The wavelengths of the second fluoride phosphor and the nitride phosphor are preferably independently between 600 and 675 nm, more preferably between 620 and 670 nm. In this invention, the second phosphor preferably includes one or more of silicate phosphor, nitride phosphor, and aluminate phosphor, specifically preferably silicate phosphor. In a specific embodiment of this invention, when the second phosphor is preferably a second fluoride phosphor, the structure of the non-sintered stacked layer device further includes a protective layer 9 disposed on the outer surface of the stacked layer 11.

[0040] In this invention, the composite material preferably comprises the following components in parts by weight: 1-23 parts of second silica gel, 1-2.5 parts of second inhibitor, and 1-72 parts of second phosphor; more preferably, it comprises the following components in parts by weight: 2-20 parts of second silica gel, 1-2 parts of second inhibitor, and 5-72 parts of second phosphor. This invention does not impose any special requirements on the specific implementation process of the mixing.

[0041] In this invention, the first silicone and the second silicone are preferably made of the same material.

[0042] After obtaining the base layer composite material and the superimposed layer composite material, the present invention laminates several unit blanks on the surface of a substrate to obtain a shaped blank. The preparation method of each unit blank includes: sequentially coating the base layer composite material and the superimposed layer composite material to form a base layer and a superimposed layer, respectively, to obtain one unit blank. In a specific embodiment of the present invention, when the present invention preferably laminates one unit blank on the surface of a substrate, the obtained non-sintered superimposed layer device includes one light-emitting unit. The present invention preferably laminates the base layer composite material and the superimposed layer composite material sequentially on the surface of a substrate to obtain a shaped blank. When the present invention preferably laminates two or more unit blanks stacked on the surface of a substrate, the obtained non-sintered superimposed layer device includes two or more light-emitting units stacked. The present invention preferably laminates the base layer composite material and the superimposed layer composite material sequentially on the surface of a substrate to obtain one unit blank, and then repeats the preparation method of the unit blank on the surface of one unit blank to obtain a shaped blank. In this invention, the thickness of a single layer of the base layer mixed material in a single unit preform is preferably 10–200 μm, more preferably 50–180 μm, and even more preferably 60–150 μm. The thickness of a single layer of the superimposed layer mixed material in a single unit preform is preferably 10–300 μm, more preferably 50–250 μm, and even more preferably 100–200 μm. This invention does not specify any particular embodiment for the coating process.

[0043] The preparation method provided by this invention preferably further includes: mixing a third silica gel and a light-diffusing powder to obtain a protective layer mixture material, wherein the temperature resistance of the third silica gel is ≥260℃, and the temperature resistance of the light-diffusing powder is ≥260℃. In this invention, the temperature resistance of the third silica gel is preferably 1300℃, and the temperature resistance of the light-diffusing powder is preferably 260~300℃. In a specific embodiment of this invention, the third silica gel is preferably purchased from Shin-Etsu Chemical Industry Co., Ltd. or DuPont, and the product model is KER series or OE series. The light-diffusing powder is preferably purchased from DuPont, and the product model is C series. The function of the light-diffusing powder is to disperse the light emitted by the phosphor in the base layer and the laminate. The mass ratio of the second silica gel and the light-diffusing powder is preferably (90~95):(2~5), more preferably (92~94):(2.5~4). This invention does not have special requirements for the specific implementation process of the mixing.

[0044] In this invention, the first silicone, the second silicone, and the third silicone are preferably made of the same material.

[0045] In this invention, when the preparation method further includes preparing the protective layer mixture material, the method for preparing each unit blank is preferably replaced by: sequentially coating the base layer mixture material, the superimposed layer mixture material, and the protective layer mixture material to form a base layer, a superimposed layer, and a protective layer, respectively, to obtain one unit blank. When this invention preferably coats one unit blank on the surface of a substrate, the resulting non-sintered superimposed layer device includes one light-emitting unit. This invention preferably coats the base layer mixture material, the superimposed layer mixture material, and the protective layer mixture material sequentially on the surface of the substrate to obtain a shaped blank. When this invention preferably coats two or more unit blanks stacked on the surface of a substrate, the resulting non-sintered superimposed layer device includes two or more light-emitting units stacked. This invention preferably coats the base layer mixture material, the superimposed layer mixture material, and the protective layer mixture material sequentially on the surface of the substrate to obtain one unit blank, and then repeats the preparation method of the unit blank on the surface of one unit blank to obtain a shaped blank. The thickness of a single layer of protective coating material in a single unit preform is preferably 5–500 μm, more preferably 50–450 μm, and even more preferably 100–400 μm. The present invention does not specify any particular embodiment for the coating process.

[0046] After obtaining the preform, the present invention cures the preform to obtain a non-sintered stacked wafer device. In the present invention, the curing temperature is 150–250°C, preferably 160–200°C, and more preferably 170–190°C. The curing time is preferably 5–60 min, more preferably 10–50 min, and even more preferably 20–40 min. A preferred method for curing is to place the preform and a carrier wafer together on glass and heat them for curing. The curing is preferably carried out in an oven, where the airflow from the oven should not directly blow onto the preform.

[0047] After the curing process is completed, the present invention preferably performs product testing on the cured product (non-sintered multilayer device). The product testing includes performing uniformity testing sequentially. The uniformity testing is preferably performed by using a planimeter to test the uniformity of the cured product (non-sintered multilayer device), and the uniformity of the non-sintered multilayer device is 1-5 μm, indicating that the product has passed acceptance.

[0048] In this invention, the product testing preferably further includes a blue light illumination test. Preferably, the blue light illumination test is performed after the uniformity test. The blue light illumination test is preferably performed by attaching the prepared non-sintered laminate device to glass and placing it on a blue light source instrument for X and Y testing to check if it meets the debugging requirements.

[0049] In this invention, after the uniformity test is completed, the invention can select finished packaged products, semi-finished products, or other instruments for measurement according to different packaging requirements and product requirements, and is not limited to blue light illumination test.

[0050] In this invention, after the product testing is completed, a transparent sheet is preferably placed over the non-sintered multilayer wafer device that meets the requirements to avoid contamination; at the same time, the manufacturing date, product information, QR code, etc. are affixed to the lower left corner of the wafer before it is put into storage, and the packaging plant can perform matching operations according to the requirements of the products to be put into the market.

[0051] The above-mentioned method for preparing non-sintered multilayer wafer devices provided by the present invention requires equipment such as an oven, a coating machine, a blue light tester, and a thickness tester (uniformity detection). These are all easily completed by packaging companies. Compared with sintered multilayer wafers, it requires more equipment, more processes, and has a longer cycle.

[0052] This invention achieves a non-sintering laminated wafer with excellent light-emitting performance and moisture resistance by controlling the types and mass ratios of raw materials in each layer, the melting point of the inhibitor, and the temperature resistance of the silicone in the non-sintering process. In this invention, the size of the laminated wafer can be cut to fit the product. The laminated wafer prepared by this invention is suitable for all types of semiconductor visible and invisible light applications, and is not limited to being attached to the light-emitting surface of chips or devices.

[0053] like Figure 1 As shown: The present invention provides a non-sintering stacked wafer device obtained by the preparation method described above, comprising a plurality of light-emitting units stacked on a carrier, each light-emitting unit comprising a base layer 11 and a stacked layer 10 disposed on a surface of the base layer 11.

[0054] In this invention, the light-emitting unit further includes a protective layer 9 disposed on the outer surface of the superimposed layer 11.

[0055] In this invention, the function of the superposition layer 10 is to mutually excite the phosphor in the base layer 11, thereby increasing brightness and effectively protecting the base phosphor from moisture. The protective layer 9 is provided on the surface of the superposition layer 10, which can protect the fluorides in the superposition layer 10 and the base layer 11 from moisture, improving the moisture resistance of the fluorides in the superposition layer 10 and the base layer 11. The function of the base layer 11 is to preferentially excite and protect the fluorides, which are difficult to penetrate and lose light efficiency due to moisture, with the chip. The strongest light and temperature of the chip can preferentially excite and protect the fluorides.

[0056] like Figure 2As shown: This invention provides a light-emitting semiconductor device, including a carrier substrate 1; a plurality of semiconductor wafers 2 disposed on the surface of the carrier substrate 1; a non-sintered stacked wafer device 3 disposed on the surface of the plurality of semiconductor wafers 2; a reflective wall 4 disposed on the surface of the carrier substrate 1 and surrounding the periphery of the plurality of semiconductor wafers 2; a powder layer disposed within the closed space formed by the reflective wall; the height of the powder layer is greater than or equal to the total height of the non-sintered stacked wafer device and the semiconductor wafers; the non-sintered stacked wafer device 3 is the non-sintered stacked wafer device described in the above technical solution.

[0057] The light-emitting semiconductor device provided by the present invention includes a carrier substrate 1. The carrier substrate 1 is preferably made of a material with good heat dissipation, such as aluminum nitride, aluminum oxide, or resin.

[0058] The light-emitting semiconductor device provided by the present invention includes a plurality of semiconductor wafers 2 disposed on the surface of the carrier substrate 1. In the present invention, the number of semiconductor wafers 2 on the surface of the carrier substrate 1 is 1 to 100,000, more preferably 1 to 1,000.

[0059] The light-emitting semiconductor device provided by this invention includes a non-sintered stacked layer device 3 disposed on the surface of a plurality of semiconductor wafers 2. The non-sintered stacked layer device 3 is the non-sintered stacked layer device described in the above-described technical solution. Preferably, the non-sintered stacked layer device 3 is disposed on the surface of each semiconductor wafer 2, or preferably on the surface of a portion of the semiconductor wafers 2. The number of the non-sintered stacked layer devices 3 is less than or equal to the number of semiconductor wafers 2.

[0060] The light-emitting semiconductor device provided by the present invention includes a reflective wall 4 disposed on the surface of the carrier substrate 1 and surrounding the periphery of a plurality of semiconductor wafers 2. In the present invention, the reflective wall 4 can be a multi-layered reflective wall in the height direction to form multi-layer reflection, or the bottom reflective wall can be short and the second layer can be high to achieve different reflection and light-concentrating effects.

[0061] The reflective wall 4 is preferably made of white reflective material. In a specific embodiment of the present invention, the material of the reflective wall is preferably white silicone. The height of the reflective wall is preferably 0.1mm to 1cm, more preferably 0.2mm to 0.5cm. The reflective wall 4 serves to protect, reflect, focus light, and reduce the size of the light-emitting surface.

[0062] The light-emitting semiconductor device provided by this invention includes a powder layer disposed within the closed space formed by the reflective wall; the height of the powder layer is greater than or equal to the total height of the non-sintered stacked wafer device and the semiconductor wafer. In this invention, when the powder is a mixture of light-shielding powder and protective powder, the powder layer is a mixture layer of light-shielding powder and protective powder. When the powder is an independent light-shielding powder or protective powder, the powder layer is a light-shielding powder layer 6 and a protective powder layer 5 disposed on the upper surface of the light-shielding powder layer. The thickness of the light-shielding powder layer 6 is preferably 5 μm to 1 cm, more preferably 10 μm to 1 mm. In this invention, the light-shielding powder is preferably phosphor or white powder; the phosphor is preferably made of nitride. The white powder is preferably made of high-temperature resistant titanium dioxide. The protective layer 5 is preferably made of high-temperature resistant silicone. The function of the powder layer is preferably to protect the sintered stacked wafer device 3.

[0063] In this invention, the height of the powder layer is greater than or equal to the total height of the non-sintered stacked wafer device and the semiconductor wafer. The height of the reflective wall is greater than or equal to the height of the powder layer.

[0064] This invention provides a packaging method for the light-emitting semiconductor device described above, comprising the following steps:

[0065] The non-sintering stacked wafer device described in the above technical solution is bonded to the surface of a plurality of semiconductor wafers 2; the semiconductor wafers 2 are bonded to the surface of the carrier substrate 1;

[0066] A reflective wall 4 is provided on the surface of the carrier substrate 1 along the periphery of several semiconductor wafers 2 using a reflective wall material;

[0067] Powder is filled into the closed space formed by the reflective wall 4 to obtain a powder layer; the height of the powder layer is greater than or equal to the total height of the non-sintered stacked wafer device 3 and the semiconductor wafer 2 to obtain the light-emitting semiconductor device.

[0068] This invention bonds the non-sintered multilayer device described in the above technical solution to the surface of several semiconductor wafers; the semiconductor wafers are bonded to the surface of a carrier substrate. Preferably, the semiconductor wafers are bonded to the carrier substrate surface using a first adhesive. The first adhesive is made of the same material as the first and second silicone rubbers, and has the same shrinkage properties, avoiding the problem of different shrinkage properties caused by different materials. Preferably, the non-sintered multilayer device is bonded to the surface of several semiconductor wafers using a second adhesive. The second adhesive is made of the same material as the first and second silicone rubbers, and has the same shrinkage properties, avoiding the problem of different shrinkage properties caused by different materials. In a specific embodiment of this invention, one non-sintered multilayer device is bonded to each semiconductor wafer.

[0069] A reflective wall is formed on the surface of the carrier substrate along the periphery of the semiconductor wafer using a reflective wall material. The present invention does not specify the particular method for setting up the reflective wall.

[0070] Powder is filled into the closed space formed by the reflective wall to obtain a powder layer; the height of the powder layer is greater than or equal to the total height of the non-sintered stacked wafer device and the semiconductor wafer to obtain the light-emitting semiconductor device.

[0071] To further illustrate the present invention, the technical solutions provided by the present invention will be described in detail below with reference to the embodiments, but they should not be construed as limiting the scope of protection of the present invention.

[0072] Example 1

[0073] according to Figure 1 The fabrication of the non-sintered multilayer device shown in the schematic diagram includes the following steps:

[0074] 35 parts of silicone (DuPont, OE series), 3 parts of inhibitor (DuPont, O series), and 62 parts of fluoride phosphor (wavelength 625-635nm) were mixed in a glue cup to obtain the base layer mixture.

[0075] 25 parts of silica gel (DuPont, OE series), 3 parts of inhibitor (DuPont, O series), and 72 parts of one or more of silicates, aluminates (wavelength 490-590nm), fluorides, and nitrides phosphors (wavelength 600-675nm) are mixed in a gel cup to obtain a composite material.

[0076] Pour 95g of silicone (DuPont, OE series) and 5g of diffuser powder (DuPont, C series) into a glue cup and mix to obtain the protective layer mixture.

[0077] Place the substrate flat on the coating equipment and coat the base layer mixture, overlay mixture, and protective layer mixture in sequence. The coating thickness of the base layer mixture is 200 μm, the coating thickness of the overlay mixture is 300 μm, and the coating thickness of the protective layer is 500 μm.

[0078] After coating, place the slide on a glass plate and bake it in an oven. During baking, the oven air should not blow directly on the slide. The baking temperature is 200℃ and the time is 60 minutes.

[0079] After baking, the product is tested on a flatness tester to determine the uniformity (thickness test) of the laminated device. A uniformity within the range of 1 to 5 μm is considered a qualified product.

[0080] After the thickness test is completed, the laminated device is attached to the glass and placed on a light source instrument that emits blue light for X and Y tests.

[0081] After the test meets the requirements, a transparent sheet is placed over the prepared multilayer chip device to prevent contamination. At the same time, the manufacturing date, product information, QR code, etc. are affixed to the lower left corner of the multilayer chip device before it is put into storage. The packaging plant can then perform matching operations according to the requirements of the products to be put into the market.

[0082] Example 2

[0083] according to Figure 2 The schematic diagram of the light-emitting semiconductor device shown is used to fabricate the device, and the specific steps include:

[0084] The non-sintered stacked wafer device prepared in Example 1 was bonded to the surface of a semiconductor wafer using silicone (DuPont, OE series). The number of semiconductor wafers was 1 to 1000, and the number of non-sintered stacked wafer devices was 1 to 1000.

[0085] The assembled individual semiconductor wafers are bonded to the surface of a carrier substrate using silicone (DuPont, OE series). The carrier substrate is made of aluminum nitride, and the semiconductor wafers can be freely distributed in series or parallel on the carrier substrate.

[0086] After the carrier substrate is bonded, a reflective wall material is used to build up corresponding reflective walls around the semiconductor wafer on the surface of the carrier substrate, with a height of 1cm.

[0087] After the reflective wall is completed, add it inside the reflective wall, according to... Figure 2 The structure shown first involves adding a 0.5cm thick layer of phosphor (made of high-temperature resistant phosphor material and adhesive with a temperature resistance of ≥260℃), followed by a 0.5cm thick layer of protective powder (made of SiO2, Al2O3, titanium dioxide, high-reflectivity white powder, white adhesive, or other protective materials or mixtures thereof), resulting in the structure shown. Figure 2 The light-emitting semiconductor device shown has the following structure.

[0088] Test Example 1

[0089] The waterproof performance of the non-sintered laminate device prepared in Example 1 was tested using MSLa2, and the test results met 2a (≤30℃ / 60%RH).

[0090] Test Example 2

[0091] The luminescence performance of the non-sintered stacked layer device prepared in Example 1 was tested. The test method was as follows: spatial spectral distribution value: dx value ≤ 0.012, dy ≤ 0.015, COA test value: du'v' ≤ 0.008, COS test value: du'v' ≤ 0.008 (COA refers to color of angle; COS refers to color of surface).

[0092] Test Example 3

[0093] The light-emitting semiconductor device prepared in Example 2 was subjected to various tests: high temperature aging: 3000H, light decay ≤10%; high temperature and high humidity aging: 3000H, light decay ≤10%; 1000 drops, no damage; red ink test: 48H, no red ink leakage into the functional area of ​​the product; thermal shock test: -45℃~+125℃, 1000 cycles, no dead lamps.

[0094] As can be seen from the above embodiments, the present invention solves the critical bottleneck problem of outsourcing diaphragms, eliminating the need for semiconductor chip packaging plants to purchase diaphragms. The cost of a single non-sintered laminated device prepared by the present invention is 80-90% lower than that of outsourced products, effectively reducing material waste and production costs. Furthermore, the debugging and manufacturing cycle time is reduced from 45 days to within 3 days. Unlike sintering methods, it does not require investment in manufacturing equipment, environmental assessment equipment, or manpower. By selectively attaching non-sintered devices of different colors within semiconductor products, various different or identical light emission patterns can be achieved.

[0095] Although the above embodiments have provided a detailed description of the present invention, they are only some embodiments of the present invention, and not all embodiments. Other embodiments can be obtained based on these embodiments without creative effort, and these embodiments all fall within the protection scope of the present invention.

Claims

1. A method of making a green laminated layer device, characterized in that, The method comprises the following steps: The first silica gel, the first barrier agent and the first fluoride fluorescent powder are mixed to obtain a base layer mixed material; the base layer mixed material comprises the following components in mass fraction: 1-35 parts of the first silica gel, 1-3 parts of the first barrier agent and 1-62 parts of the first fluoride fluorescent powder; the temperature resistance of the first silica gel is greater than or equal to 260 DEG C, the volatile point of the first barrier agent is less than or equal to 150 DEG C, and the wavelength of the first fluoride fluorescent powder is 625-635 nm; The second silica gel, the second barrier agent and the second fluorescent powder are mixed to obtain a superimposed layer mixed material, wherein the second fluorescent powder comprises one or more of silicate fluorescent powder, nitride fluorescent powder, aluminate fluorescent powder and second fluoride fluorescent powder; the superimposed layer mixed material comprises the following components in mass fraction: 1-25 parts of the second silica gel, 1-3 parts of the second barrier agent and 1-72 parts of the second fluorescent powder; the temperature resistance of the second silica gel is greater than or equal to 260 DEG C, the volatile point of the second barrier agent is less than or equal to 150 DEG C, the wavelength of the silicate fluorescent powder and the aluminate fluorescent powder is independently 490-590 nm, and the wavelength of the second fluoride fluorescent powder and the nitride fluorescent powder is independently 600-675 nm; The third silica gel and the light scattering powder are mixed to obtain a protective layer mixed material; the temperature resistance of the third silica gel is greater than or equal to 260 DEG C, and the temperature resistance of the light scattering powder is greater than or equal to 260 DEG C; the mass ratio of the third silica gel to the light scattering powder is (90-95):(2-5); A plurality of unit blanks are laminated and coated on a carrier sheet to obtain a formed blank; the preparation method of each unit blank comprises the following steps: sequentially coating the base layer mixed material, the superimposed layer mixed material and the protective layer mixed material to form a base layer, a superimposed layer and a protective layer respectively, thereby obtaining a unit blank; the coating thickness of the base layer mixed material in the unit blank is 10-200 microns, the coating thickness of the superimposed layer mixed material in the unit blank is 10-300 microns, and the coating thickness of the protective layer mixed material in the unit blank is 5-500 microns; The formed blank is cured to obtain a non-sintered superimposed layer sheet device; the curing temperature is 150-250 DEG C.

2. The unfired build-up layer sheet device produced by the production method of claim 1, characterized by The device comprises a plurality of light emitting units arranged in layers on a carrier sheet; each light emitting unit comprises a base layer (11) and a superimposed layer (10) arranged on one surface of the base layer (11); the light emitting unit further comprises a protective layer (9) arranged on the outer surface of the superimposed layer (10).

3. A light emitting semiconductor device, characterized by, The device comprises a carrier substrate (1), a plurality of semiconductor wafers (2) arranged on the surface of the carrier substrate (1), a non-sintered superimposed layer sheet device (3) arranged on the surface of the carrier substrate (1) and surrounding the periphery of the semiconductor wafers (2), a reflective wall (4) arranged on the surface of the carrier substrate (1) and surrounding the periphery of the semiconductor wafers (2), and a powder layer arranged in the closed space formed by the reflective wall; the height of the powder layer is greater than the total height of the non-sintered superimposed layer sheet device (3) and the semiconductor wafers (2); the non-sintered superimposed layer sheet device (3) is the non-sintered superimposed layer sheet device of claim 2.

4. The packaging method of a light emitting semiconductor device according to claim 3, wherein The method comprises the following steps: The unsintered laminated layer sheet device of claim 2 is bonded on the surface of a plurality of semiconductor wafers (2); the semiconductor wafers (2) are bonded on the surface of the carrier substrate (1); A reflecting wall (4) is arranged by using reflecting wall material along the periphery of the semiconductor wafers (2) on the surface of the carrier substrate (1); A powder layer is obtained by filling powder in the closed space formed by the reflecting wall (4); the height of the powder layer is greater than the total height of the unsintered laminated layer sheet device (3) and the semiconductor wafers (2), thereby obtaining the light emitting semiconductor device.

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