A non-contact micrometer-level electric field measurement method and system

Abstract

The invention relates to the technical field of material electric field measurement, and relates to a non-contact micrometer-level electric field measurement method and system. The method comprises the following steps: obtaining operation instruction information and a mapping relationship, wherein the operation instruction information is used to enable laser energy to act on a first object to be measured in a measurement area, wherein the measurement area is an area between two oppositely arranged flat plate electrodes, and the first object to be measured is a voltage-equalizing hood; the mapping relationship comprises a mapping relationship between a spectral intensity variation and an electric field intensity; determining a point to be measured of the first object to be measured, emitting laser energy to the point to be measured of the first object to be measured in response to the operation instruction information and obtaining an optical signal, wherein the optical signal is a signal generated by the laser energy acting on the voltage-equalizing hood; analyzing and processing the optical signal to obtain first spectrum information; and determining the electric field intensity at the point to be measured of the voltage-equalizing hood according to the mapping relationship and the first spectrum information. The invention solves the problem in the prior art that it is difficult to determine the actual electric field of the voltage-equalizing hood under complex working conditions.

Description

Technical Field

[0001] The present invention relates to the technical field of material electric field measurement, and in particular to a non-contact micrometer-level electric field measurement method and system. Background Art

[0002] Insulators in high-voltage transmission lines play a very important role in ensuring the safe operation of power systems. As the voltage level of transmission line circuits increases, the height of pole towers and the length of insulator strings increase dramatically. The high-voltage end of the insulator is subjected to a higher voltage, which is prone to corona and even electrical breakdown, seriously affecting the safety of the power system. By installing a voltage-grading cover, the uniformity of the electric field of the insulator string can be effectively improved, thereby reducing the risk of insulator breakdown. Therefore, when designing and optimizing the voltage-grading cover, it is very necessary to perform actual verification of the maximum field strength area of ​​the insulator. At present, model simulation methods are mostly used to perform numerical analysis of the electric field of the insulator string, lacking electric field verification in the actual environment. However, the electric field measurement in high-voltage environments has high requirements on the resistance of the measuring instrument, and the existing high-voltage electric field measurement methods are mostly used for electric field measurement in a large spatial range. It is difficult to determine the maximum actual electric field in the micrometer point area at the edge of the metal surface under complex working conditions. Therefore, a non-contact, fast, and high-spatial-resolution electric field measurement method is urgently needed. Summary of the invention

[0003] The object of the present invention is to provide a non-contact micrometer-level electric field measurement method and system.

[0004] In order to achieve the above objectives, the present application provides the following technical solutions:

[0005] On the one hand, an embodiment of the present application provides a non-contact micrometer-level electric field measurement method, the method comprising:

[0006] Acquire operation instruction information and a mapping relationship, wherein the operation instruction information is used to make the laser energy act on the first object to be measured in the measurement area, the measurement area is the area between two oppositely arranged flat electrodes, the first object to be measured is a voltage equalizing cover, and the mapping relationship includes a mapping relationship between the spectral intensity change and the electric field intensity;

[0007] Determine a point to be measured of a first object to be measured, emit laser energy to the point to be measured of the first object to be measured in response to the operation instruction information and obtain an optical signal, wherein the optical signal is a signal generated by the laser energy acting on the pressure equalizing cover, and the point to be measured includes a point of micrometer order;

[0008] Analyzing and processing the optical signal to obtain first spectrum information;

[0009] The electric field intensity at the point to be measured in the voltage grading cover is determined according to the mapping relationship and the first spectrum information.

[0010] In a second aspect, an embodiment of the present application provides a non-contact micrometer-level electric field measurement system, the system comprising:

[0011] an acquisition module, used for acquiring operation instruction information and a mapping relationship, wherein the operation instruction information is used for causing laser energy to act on a first object to be measured in a measurement area, wherein the measurement area is an area between two oppositely arranged flat electrodes, and the first object to be measured is a voltage equalizing cover, and the mapping relationship includes a mapping relationship between a spectral intensity variation and an electric field intensity;

[0012] A first processing module is used to determine a point to be measured of a first object to be measured, and in response to the operation instruction information, emit laser energy to the point to be measured of the first object to be measured and obtain an optical signal, wherein the optical signal is a signal generated by the laser energy acting on the pressure equalizing cover, and the point to be measured includes a point of micrometer order;

[0013] A second processing module is used to analyze and process the optical signal to obtain first spectrum information;

[0014] The third processing module is used to determine the electric field intensity at the test point of the voltage equalizing cover according to the mapping relationship and the first spectrum information.

[0015] In a third aspect, an embodiment of the present application provides a non-contact micrometer-scale electric field measurement device, the device comprising a memory and a processor. The memory is used to store a computer program; the processor is used to implement the steps of the above-mentioned non-contact micrometer-scale electric field measurement method when executing the computer program.

[0016] In a fourth aspect, an embodiment of the present application provides a readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the steps of the above-mentioned non-contact micrometer-level electric field measurement method are implemented.

[0017] The beneficial effects of the present invention are:

[0018] The present invention characterizes the plasma spectrum information generated by laser ablation of the object surface through the electric field intensity on the object surface, and can achieve electric field measurement with ultra-high spatial resolution. It is suitable for non-contact, high-precision, and non-destructive measurement, and effectively avoids the problem in the prior art that it is difficult to determine the actual electric field of the pressure equalizing hood under complex working conditions.

[0019] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or be understood by implementing the embodiments of the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the written description, claims, and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0021] Figure 1 Schematic diagram of the flow of the non-contact micrometer-level electric field measurement method described in an embodiment of the present invention.

[0022] Figure 2 Schematic diagram of the structure of the non-contact micrometer-level electric field measurement system described in an embodiment of the present invention.

[0023] Figure 3 Schematic diagram of the structure of the non-contact micrometer-level electric field measurement device described in an embodiment of the present invention.

[0024] Figure 4 Schematic diagram of characteristic spectral lines corresponding to different electric field intensities described in an embodiment of the present invention.

[0025] Figure 5 It is a schematic diagram of numerical simulation of the test point of the pressure equalizing cover described in an embodiment of the present invention.

[0026] Labels in the figure: 901, acquisition module; 902, first processing module; 903, second processing module; 904, third processing module; 9011, acquisition unit; 9012, first processing unit; 9013, pre-processing unit; 9014, second processing unit; 90131, screening unit; 90132, ninth processing unit; 90133, tenth processing unit; 90141, third processing unit; 90142, fourth processing unit; 90143, fifth processing unit; 90144 , sixth processing unit; 90145, seventh processing unit; 901451, division unit; 901452, eighth processing unit; 901453, training unit; 901454, evaluation unit; 9041, eleventh processing unit; 9042, twelfth processing unit; 9043, thirteenth processing unit; 800, non-contact micrometer-scale electric field measurement equipment; 801, processor; 802, memory; 803, multimedia component; 804, I / O interface; 805, communication component. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. The components of the embodiments of the present invention generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0028] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings. At the same time, in the description of the present invention, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0029] Embodiment 1:

[0030] This embodiment provides a non-contact micrometer-level electric field measurement method. It can be understood that a scenario can be laid out in this embodiment, for example: a scenario of performing electric field analysis on a pressure equalizing hood under actual complex working conditions.

[0031] See also Figure 1 , the figure shows that the method includes step S1, step S2, step S3 and step S4, which are specifically:

[0032] Step S1, obtaining operation instruction information and a mapping relationship, wherein the operation instruction information is used to make laser energy act on a first object to be measured in a measurement area, wherein the measurement area is an area between two oppositely arranged flat electrodes, and the first object to be measured is a voltage equalizing cover, and the mapping relationship includes a mapping relationship between a spectral intensity change and an electric field intensity;

[0033] In this step, a pulsed nanosecond laser is used to emit laser energy to act on the first object to be measured. The laser energy output by the pulsed nanosecond laser is 50 mJ and the wavelength is 1064 nm.

[0034] The step S1 also includes steps S11, S12, S13 and S14, which are specifically:

[0035] Step S11, obtaining an electric field control instruction, wherein the electric field control instruction is used to control the flat electrode to change the electric field strength;

[0036] In this step, a uniform electric field can be generated by using a flat electrode. The intensity of the electric field generated by the flat electrode can be changed by sending an electric field control instruction to explore the change in spectral intensity under different electric field intensities.

[0037] Step S12, in response to the electric field control instruction, collecting spectral information corresponding to the test point of the second object to be tested under different electric field strengths to obtain second spectral information, wherein the second spectral information includes at least two spectral images, and the material of the second object to be tested is the same as that of the uniform cover;

[0038] In this step, in response to the electric field control instruction, the electric field strength is changed to 0kv / cm, 5kv / cm, 10kv / cm, 15kv / cm and 20kv / cm, and the spectral information corresponding to the measured point of the second object to be measured is collected at each electric field strength. It should be noted that the laser energy is unstable and prone to fluctuation. Therefore, an energy meter is used to monitor the laser energy at different positions, and the average value is taken as the standard laser energy to determine the specific laser energy of the actual measurement point, so as to reduce the error caused by the laser's own properties to the measurement result.

[0039] Step S13, preprocessing the second spectrum information to obtain preprocessed second spectrum information;

[0040] The step S13 also includes step S131, step S132 and step S133, which are specifically:

[0041] Step S131, screening the second spectral information to obtain screened second spectral information, wherein the screened second spectral information includes spectral information after invalid data is removed;

[0042] In this step, invalid data with large fluctuations in the second spectrum information needs to be screened out to avoid interference of the invalid data on the measurement result, so as to improve the accuracy of the electric field measurement.

[0043] Step S132, performing cubic spline interpolation calculation on the second screened spectral information to obtain an average benchmark of each second spectral information;

[0044] In this step, performing cubic spline interpolation calculation on the spectral information after the second screening is a technical solution well known to those skilled in the art, so it will not be described here in detail.

[0045] Step S133: removing the fitting baseline according to the average baseline of each piece of the second spectrum information to obtain the preprocessed second spectrum information.

[0046] In this step, the accuracy of electric field measurement can be effectively improved by removing the fitting baseline.

[0047] Step S14: determining the mapping relationship according to the preprocessed second spectrum information.

[0048] The step S14 also includes step S141, step S142, step S143, step S144 and step S415, which are specifically:

[0049] Step S141, performing feature extraction on the preprocessed second spectrum information to obtain feature information, wherein the feature information includes feature spectral lines corresponding to different electric field intensities;

[0050] In this step, if Figure 4 As shown, Figure 4 The corresponding characteristic spectral lines under different electric field strengths indicate that the spectral intensity changes significantly with the increase of electric field strength. The reason for this phenomenon is that the external power supply voltage is applied to the second object to be tested, so that a stable localized electric field is generated on the surface of the second object to be tested. After the energy transfer and transfer between the localized electric field and the free electrons in the second object to be tested, the second object to be tested has higher energy. When the high-energy laser reaches the surface of the second object to be tested, it is easier to excite plasma, which eventually leads to the enhancement of the spectral lines. In summary, the electric field around the object will significantly affect the spectral characteristics, especially the spectral intensity. Therefore, by establishing a mapping relationship between the spectral intensity change and the electric field strength, a basis can be provided for determining the actual electric strength of the voltage equalizing hood.

[0051] Step S142, selecting a characteristic spectrum line with an electric field intensity of 0 in the characteristic information as a reference characteristic graph;

[0052] Step S143, processing the characteristic spectrum lines in the characteristic information and the reference characteristic graph to obtain a spectrum shift image;

[0053] In this step, the characteristic spectrum line with an electric field intensity of 0 is used as the reference characteristic map, and the characteristic spectrum lines corresponding to 5kv / cm, 10kv / cm, 15kv / cm and 20kv / cm are subtracted from the reference characteristic map to obtain a spectral shift image.

[0054] Step S144, extracting the spectral shift image to obtain spectral intensity variation information;

[0055] In this step, by subtracting the characteristic spectral lines corresponding to 5kv / cm, 10kv / cm, 15kv / cm and 20kv / cm from the benchmark characteristic diagram, the spectral intensity changes of 5kv / cm, 10kv / cm, 15kv / cm and 20kv / cm compared to 0 electric field can be obtained.

[0056] Step S145: determining the mapping relationship according to the spectral intensity variation information.

[0057] In this embodiment, by taking the characteristic spectrum line with an electric field strength of 0 as the benchmark characteristic diagram, the characteristic spectrum lines corresponding to 5kv / cm, 10kv / cm, 15kv / cm and 20kv / cm are subtracted from the benchmark characteristic diagram to obtain a spectral shift image, which can effectively remove the interference of the test environment on the electric field measurement and further improve the measurement accuracy of the electric field strength of the voltage equalizing hood.

[0058] The step S145 also includes step S1451, step S1452, step S1453 and step S1454, which are specifically:

[0059] Step S1451, dividing the training set and the test set based on the spectral intensity variation information;

[0060] Step S1452, standardizing the spectral intensity variation and electric field intensity in the training set to obtain a standard set;

[0061] In this step, the spectral intensity variation and electric field intensity in the training set are standardized by adjusting the mean of the data to 0 and the variance to 1 to make the data scale consistent.

[0062] Step S1453, sending the standard set to a preset neural network model, and training the neural network model using a reverse artificial neural network algorithm to obtain a trained neural network model;

[0063] Step S1454: using the test set to evaluate the trained neural network model, wherein when the evaluation result is valid, a mapping relationship between the spectral intensity change and the electric field intensity is obtained.

[0064] Step S2, determining a point to be measured of the first object to be measured, emitting laser energy to the point to be measured of the first object to be measured in response to the operation instruction information and acquiring an optical signal, wherein the optical signal is a signal generated by the laser energy acting on the pressure equalizing cover, and the point to be measured includes a point of micrometer order;

[0065] In this step, the laser beam is focused to a point to be measured of an object to be measured by setting an optical system to ensure that the laser can accurately interact with the first object to be measured. It should be noted that the optical learning channel includes optical elements such as lenses, focusing lenses, and laser beam guides. In this application, a plano-convex lens (LA1608-YAG) is used to adjust the direction of the laser, and two collimating lenses (74-UV) and a focusing lens (OLV50) are used to focus and transmit plasma radiation.

[0066] It should be noted that for the points to be measured on the pressure equalizing cover, i.e., points at the micron level, the existing technology can only obtain the critical values ​​of corona discharge or breakdown through numerical simulation for electric field analysis, and it is difficult to determine the actual electric field under complex working conditions, such as Figure 5 As shown, Figure 5 It is the maximum value of the electric field intensity at the test point of the pressure equalizing cover measured under numerical simulation. However, in the present application, by focusing the laser energy on the test point of the pressure equalizing cover, the electric field intensity at the micron-level point on the pressure equalizing cover can be analyzed under complex working conditions. The electric field calibration in the actual environment is simple to operate and has high accuracy.

[0067] Step S3, analyzing and processing the optical signal to obtain first spectrum information;

[0068] In this step, the optical signal is transmitted to the spectrometer (IHR550) through the optical fiber (FIB-600-DUV) for analysis and processing to obtain the first spectrum information.

[0069] Step S4: determining the electric field intensity at the point to be measured of the voltage grading cover according to the mapping relationship and the first spectrum information.

[0070] The step S4 also includes step S41, step S42 and step S43, which are specifically:

[0071] Step S41, processing the first spectrum information and the reference characteristic graph to obtain a spectrum shift image at a point to be measured in the pressure equalizing cover;

[0072] In this step, the first spectrum information corresponding to the point to be tested of the pressure equalizing cover is subtracted from the reference characteristic diagram to obtain a spectrum shift image of the point to be tested of the pressure equalizing cover.

[0073] Step S42, extracting the spectrum shift image at the test point of the pressure equalizing cover to obtain the spectrum intensity change at the test point of the pressure equalizing cover;

[0074] Step S43: determining the electric field intensity at the point to be measured of the voltage equalizing cover according to the mapping relationship and the variation of the spectrum intensity at the point to be measured of the voltage equalizing cover.

[0075] In this step, the electric field intensity at the test point of the voltage grading cover can be determined by calculating according to the mapping relationship between the spectral intensity variation and the electric field intensity and the spectral intensity variation at the test point of the voltage grading cover.

[0076] Embodiment 2:

[0077] like Figure 2 As shown, this embodiment provides a non-contact micrometer-level electric field measurement system, the system includes an acquisition module 901, a first processing module 902, a second processing module 903 and a third processing module 904, wherein specifically:

[0078] An acquisition module 901 is used to acquire operation instruction information and a mapping relationship, wherein the operation instruction information is used to make the laser energy act on the first object to be measured in the measurement area, wherein the measurement area is the area between two oppositely arranged flat electrodes, and the first object to be measured is a voltage equalizing cover, and the mapping relationship includes a mapping relationship between the spectral intensity change and the electric field strength;

[0079] The first processing module 902 is used to determine the test point of the first object to be measured, and in response to the operation instruction information, emit laser energy to the test point of the first object to be measured and obtain an optical signal, wherein the optical signal is a signal generated by the laser energy acting on the pressure equalizing cover, and the test point includes a point of micrometer level;

[0080] The second processing module 903 is used to analyze and process the optical signal to obtain first spectrum information;

[0081] The third processing module 904 is used to determine the electric field intensity at the test point of the voltage equalizing cover according to the mapping relationship and the first spectrum information.

[0082] In a specific implementation of the present disclosure, the acquisition module 901 further includes an acquisition unit 9011, a first processing unit 9012, a pre-processing unit 9013 and a second processing unit 9014, which are specifically:

[0083] An acquisition unit 9011 is used to acquire an electric field control instruction, where the electric field control instruction is used to control the plate electrode to change the electric field strength;

[0084] The first processing unit 9012 is used to collect spectral information corresponding to the test point of the second object to be tested under different electric field strengths in response to the electric field control instruction to obtain second spectral information, wherein the second spectral information includes at least two spectral images, and the material of the second object to be tested is the same as that of the uniform cover;

[0085] A preprocessing unit 9013 is used to preprocess the second spectrum information to obtain preprocessed second spectrum information;

[0086] The second processing unit 9014 is used to determine the mapping relationship according to the preprocessed second spectrum information.

[0087] In a specific implementation of the present disclosure, the pre-processing unit 9013 further includes a screening unit 90131, a ninth processing unit 90132 and a tenth processing unit 90133, which are specifically:

[0088] A screening unit 90131 is used to screen the second spectral information to obtain screened second spectral information, wherein the screened second spectral information includes spectral information after invalid data is removed;

[0089] A ninth processing unit 90132 is used to perform a cubic spline interpolation calculation on the second screened spectral information to obtain an average benchmark of each second spectral information;

[0090] The tenth processing unit 90133 is used to remove the fitting baseline according to the average baseline of each piece of the second spectrum information to obtain the preprocessed second spectrum information.

[0091] In a specific embodiment of the present disclosure, the second processing unit 9014 further includes a third processing unit 90141, a fourth processing unit 90142, a fifth processing unit 90143, a sixth processing unit 90144 and a seventh processing unit 90145, wherein specifically:

[0092] The third processing unit 90141 is used to extract features from the preprocessed second spectrum information to obtain feature information, wherein the feature information includes feature spectral lines corresponding to different electric field intensities;

[0093] The fourth processing unit 90142 is used to select a characteristic spectrum line with an electric field intensity of 0 in the characteristic information as a reference characteristic graph;

[0094] A fifth processing unit 90143 is used to process the characteristic spectrum lines in the characteristic information and the reference characteristic graph to obtain a spectrum shift image;

[0095] The sixth processing unit 90144 is used to extract the spectrum shift image to obtain spectrum intensity variation information;

[0096] The seventh processing unit 90145 is used to determine the mapping relationship according to the spectral intensity change information.

[0097] In a specific implementation of the present disclosure, the seventh processing unit 90145 further includes a division unit 901451, an eighth processing unit 901452, a training unit 901453 and an evaluation unit 901454, which are specifically:

[0098] A division unit 901451 is used to divide the training set and the test set based on the spectral intensity variation information;

[0099] An eighth processing unit 901452 is used to perform standardization processing on the spectral intensity variation and the electric field intensity in the training set to obtain a standard set;

[0100] The training unit 901453 is used to send the standard set to a preset neural network model, and train the neural network model using a reverse artificial neural network algorithm to obtain a trained neural network model;

[0101] The evaluation unit 901454 is used to evaluate the trained neural network model using the test set, wherein when the evaluation result is valid, a mapping relationship between the spectral intensity change and the electric field intensity is obtained.

[0102] In a specific implementation of the present disclosure, the third processing module 904 further includes an eleventh processing unit 9041, a twelfth processing unit 9042 and a thirteenth processing unit 9043, which are specifically:

[0103] An eleventh processing unit 9041 is used to process the first spectrum information and the reference characteristic diagram to obtain a spectrum shift image at a point to be measured in the pressure equalizing cover;

[0104] The twelfth processing unit 9042 is used to extract the spectrum shift image at the test point of the pressure equalizing cover to obtain the spectrum intensity change at the test point of the pressure equalizing cover;

[0105] The thirteenth processing unit 9043 is used to determine the electric field intensity at the point to be measured in the pressure equalizing cover according to the mapping relationship and the variation of the spectrum intensity at the point to be measured in the pressure equalizing cover.

[0106] It should be noted that, regarding the system in the above embodiment, the specific manner in which each module performs operations has been described in detail in the embodiment of the method, and will not be elaborated here.

[0107] Embodiment 3:

[0108] Corresponding to the above method embodiment, this embodiment further provides a non-contact micron-level electric field measurement device. The electric field measurement device described below and the non-contact micron-level electric field measurement method described above can refer to each other.

[0109] Figure 3 FIG. 8 is a block diagram of a non-contact micrometer-level electric field measurement device 800 according to an exemplary embodiment. Figure 3 As shown, the non-contact micron-scale electric field measurement device 800 may include: a processor 801 and a memory 802. The non-contact micron-scale electric field measurement device 800 may also include one or more of a multimedia component 803, an I / O interface 804, and a communication component 805.

[0110] The processor 801 is used to control the overall operation of the non-contact micron-scale electric field measurement device 800 to complete all or part of the steps in the non-contact micron-scale electric field measurement method described above. The memory 802 is used to store various types of data to support the operation of the electric field measurement device 800, which may include, for example, instructions for any application or method used to operate on the non-contact micron-scale electric field measurement device 800, and application-related data, such as contact data, sent and received messages, pictures, audio, video, etc. The memory 802 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, disk or optical disk. The multimedia component 803 may include a screen and an audio component. The screen may be, for example, a touch screen, and the audio component is used to output and / or input audio signals. For example, the audio component may include a microphone for receiving external audio signals. The received audio signal may be further stored in the memory 802 or sent via the communication component 805. The audio component also includes at least one speaker for outputting audio signals. The I / O interface 804 provides an interface between the processor 801 and other interface modules, and the above-mentioned other interface modules can be keyboards, mice, buttons, etc. These buttons can be virtual buttons or physical buttons. The communication component 805 is used for wired or wireless communication between the non-contact micron-scale electric field measurement device 800 and other devices. Wireless communication, such as Wi-Fi, Bluetooth, Near Field Communication (NFC), 2G, 3G or 4G, or a combination of one or more of them, so the corresponding communication component 805 can include: Wi-Fi module, Bluetooth module, NFC module.

[0111] In an exemplary embodiment, the non-contact micron-scale electric field measurement device 800 can be implemented by one or more application-specific integrated circuits (ASIC), digital signal processors (DSP), digital signal processing devices (DSPD), programmable logic devices (PLD), field programmable gate arrays (FPGA), controllers, microcontrollers, microprocessors or other electronic components to perform the above-mentioned non-contact micron-scale electric field measurement method.

[0112] In another exemplary embodiment, a computer-readable storage medium including program instructions is also provided, and when the program instructions are executed by a processor, the steps of the above-mentioned non-contact micrometer-level electric field measurement method are implemented. For example, the computer-readable storage medium can be the above-mentioned memory 802 including program instructions, and the above-mentioned program instructions can be executed by the processor 801 of the non-contact micrometer-level electric field measurement device 800 to complete the above-mentioned non-contact micrometer-level electric field measurement method.

[0113] Embodiment 4:

[0114] Corresponding to the above method embodiment, a readable storage medium is also provided in this embodiment. The readable storage medium described below and the non-contact micrometer-level electric field measurement method described above can refer to each other.

[0115] A readable storage medium stores a computer program, which, when executed by a processor, implements the steps of the non-contact micrometer-level electric field measurement method of the above method embodiment.

[0116] The readable storage medium may specifically be a U disk, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, or other readable storage medium that can store program codes.

[0117] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

[0118] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A non-contact micrometer-level electric field measurement method, characterized in that: include: Acquire operation instruction information and a mapping relationship, wherein the operation instruction information is used to make the laser energy act on the first object to be measured in the measurement area, the measurement area is the area between two oppositely arranged flat electrodes, the first object to be measured is a voltage equalizing cover, and the mapping relationship includes a mapping relationship between the spectral intensity change and the electric field intensity; Determine a point to be measured of a first object to be measured, emit laser energy to the point to be measured of the first object to be measured in response to the operation instruction information and obtain an optical signal, wherein the optical signal is a signal generated by the laser energy acting on the pressure equalizing cover, and the point to be measured includes a point of micrometer order; Analyzing and processing the optical signal to obtain first spectrum information; Determine the electric field intensity at the point to be measured in the voltage grading cover according to the mapping relationship and the first spectrum information; Wherein, obtaining the mapping relationship includes: Obtaining an electric field control instruction, wherein the electric field control instruction is used to control the plate electrode to change the electric field strength; In response to the electric field control instruction, spectral information corresponding to the test point of the second object to be tested is collected under different electric field strengths to obtain second spectral information, wherein the second spectral information includes at least two spectral images, and the material of the second object to be tested is the same as that of the uniform cover; preprocessing the second spectrum information to obtain preprocessed second spectrum information; The mapping relationship is determined according to the preprocessed second spectrum information.

2. The non-contact micrometer-level electric field measurement method according to claim 1, characterized in that: Determining the mapping relationship according to the preprocessed second spectrum information includes: Extracting features from the preprocessed second spectrum information to obtain feature information, wherein the feature information includes feature spectral lines corresponding to different electric field intensities; Select the characteristic spectrum line with electric field intensity of 0 in the characteristic information as the reference characteristic graph; Processing the characteristic spectral lines in the characteristic information with the reference characteristic graph to obtain a spectral shift image; Extracting the spectral shift image to obtain spectral intensity variation information; The mapping relationship is determined according to the spectral intensity variation information.

3. The non-contact micrometer-level electric field measurement method according to claim 2, characterized in that: Determining the mapping relationship according to the spectral intensity variation includes: Dividing a training set and a test set based on the spectral intensity variation information; Standardizing the spectral intensity variation and electric field intensity in the training set to obtain a standard set; Sending the standard set to a preset neural network model, and training the neural network model using a reverse artificial neural network algorithm to obtain a trained neural network model; The trained neural network model is evaluated using the test set, wherein when the evaluation result is valid, a mapping relationship between the spectral intensity change and the electric field intensity is obtained.

4. A non-contact micrometer-level electric field measurement system, characterized in that: include: an acquisition module, used for acquiring operation instruction information and a mapping relationship, wherein the operation instruction information is used for causing laser energy to act on a first object to be measured in a measurement area, wherein the measurement area is an area between two oppositely arranged flat electrodes, and the first object to be measured is a voltage equalizing cover, and the mapping relationship includes a mapping relationship between a spectral intensity variation and an electric field intensity; A first processing module is used to determine a point to be measured of a first object to be measured, and in response to the operation instruction information, emit laser energy to the point to be measured of the first object to be measured and obtain an optical signal, wherein the optical signal is a signal generated by the laser energy acting on the pressure equalizing cover, and the point to be measured includes a point of micrometer order; A second processing module is used to analyze and process the optical signal to obtain first spectrum information; A third processing module, used to determine the electric field intensity at the test point of the pressure equalizing cover according to the mapping relationship and the first spectrum information; Wherein, the acquisition module includes: An acquisition unit, used for acquiring an electric field control instruction, wherein the electric field control instruction is used for controlling the plate electrode to change the electric field strength; a first processing unit, configured to collect spectral information corresponding to a test point of a second object to be tested under different electric field intensities in response to the electric field control instruction to obtain second spectral information, wherein the second spectral information includes at least two spectral images, and the material of the second object to be tested is the same as that of the uniform cover; A preprocessing unit, used for preprocessing the second spectrum information to obtain preprocessed second spectrum information; The second processing unit is used to determine the mapping relationship according to the preprocessed second spectrum information.

5. The non-contact micrometer-level electric field measurement system according to claim 4, characterized in that: The second processing unit comprises: A third processing unit is used to extract features from the preprocessed second spectrum information to obtain feature information, wherein the feature information includes feature spectral lines corresponding to different electric field intensities; A fourth processing unit is used to select a characteristic spectrum line with an electric field intensity of 0 in the characteristic information as a reference characteristic graph; a fifth processing unit, configured to process the characteristic spectral lines in the characteristic information and the reference characteristic graph to obtain a spectral shift image; A sixth processing unit, configured to extract the spectral shift image to obtain spectral intensity variation information; The seventh processing unit is used to determine the mapping relationship according to the spectral intensity change information.

6. The non-contact micrometer-level electric field measurement system according to claim 5, characterized in that: The seventh processing unit comprises: A division unit, used for dividing a training set and a test set based on the spectral intensity variation information; an eighth processing unit, configured to perform standardization processing on the spectral intensity variation and the electric field intensity in the training set to obtain a standard set; A training unit, used for sending the standard set to a preset neural network model, and training the neural network model using a reverse artificial neural network algorithm to obtain a trained neural network model; An evaluation unit is used to evaluate the trained neural network model using the test set, wherein when the evaluation result is valid, a mapping relationship between the spectral intensity change and the electric field intensity is obtained.

7. A non-contact micrometer-level electric field measurement device, characterized in that: include: Memory for storing computer programs; A processor is used to implement the steps of the non-contact micrometer-level electric field measurement method as claimed in any one of claims 1 to 3 when executing the computer program.

8. A readable storage medium, characterized in that: The readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the non-contact micrometer-level electric field measurement method according to any one of claims 1 to 3 are implemented.

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