Wafer-level two-dimensional graphite phase carbon nitride and preparation method thereof

By using plasma-assisted molecular beam epitaxy to grow two-dimensional graphitic carbon nitride films on substrates, the problem of uneven powder coating in existing technologies has been solved, and high-quality wafer-level two-dimensional graphitic carbon nitride films have been prepared to meet the needs of electronics research.

CN117865079BActive Publication Date: 2026-06-02SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF 1 Cites 0 Cited by

Patent Information

Application Number
CN202410120210.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-01-29
Publication Date
2026-06-02
Estimated Expiration
2044-01-29

AI Technical Summary

Technical Problem

In existing technologies, the graphitic carbon nitride products prepared by solvothermal or thermal polymerization methods are powders, and the surface morphology and crystallinity of the coating cannot be guaranteed to be uniform, which is not conducive to electronics research.

Method used

Two-dimensional graphitic carbon nitride films were directly grown on a substrate using plasma-assisted molecular beam epitaxy. By controlling growth parameters such as temperature, gas flow rate, and plasma power, the ratio of nitrogen and carbon atoms and the uniformity of deposition were ensured.

Benefits of technology

A wafer-level two-dimensional graphitic carbon nitride film with high crystal quality and good uniformity was prepared, which is suitable for different research or working conditions.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN117865079B_ABST
    Figure CN117865079B_ABST
Patent Text Reader

Abstract

The application discloses wafer-level two-dimensional graphite-phase carbon nitride and a preparation method thereof. The preparation method comprises the following steps: placing a substrate in a pretreatment cavity after cleaning and drying; performing degassing and vacuum annealing on the substrate until an atomic level step appears on the surface of the substrate, and then cooling to a first temperature; controlling a growth table to be heated to the first temperature, transferring the substrate to the growth table, and heating to a second temperature; controlling the growth table to rotate, introducing nitrogen into the growth cavity, and controlling a nitrogen plasma generating device and an electron beam device to start working; synchronously opening a nitrogen plasma generating device shutter and an electron beam device shutter; and cooling to room temperature after growth is completed. The wafer-level two-dimensional graphite-phase carbon nitride film is directly prepared based on a method of plasma-assisted molecular beam epitaxy, the prepared two-dimensional graphite-phase carbon nitride has good uniformity and high crystallization quality, the size and thickness of the prepared graphite-phase carbon nitride film can be adjusted based on actual requirements, and different research or working condition requirements can be met.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Method for producing transition metal nitride single crystal and transition metal nitride single crystal

    CN117166060A