Improved sealed mocvd apparatus

Abstract

The application provides an improved sealing MOCVD device, which comprises a reaction cavity shell for providing an environment for chemical reaction of reaction gas, a gas inlet and a gas outlet for supplying reaction gas into the reaction cavity shell and discharging gas from the reaction cavity shell respectively, and an inner cylinder (41) arranged in the reaction cavity shell and forming a reaction gas passage (51) between the inner cylinder (41) and the reaction cavity shell, wherein the MOCVD device is configured to enable relative rotation between the inner cylinder (41) and the reaction cavity shell; wherein the reaction cavity shell comprises a first shell (31) and a second shell (32), and a sealing assembly is arranged between the first shell (31) and the second shell (32). The improved sealing MOCVD device has improved sealing performance, good temperature uniformity, gas flow uniformity and gas concentration uniformity, can improve the deposition quality of semiconductor devices, and can increase the production capacity.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, particularly semiconductor epitaxial thin film vapor deposition technology, and more specifically, to an improved sealing MOCVD apparatus. Background Technology

[0002] Semiconductor wafer fabrication typically involves two main steps: substrate preparation and epitaxial growth. Epitaxy refers to the process of growing a new single crystal layer on a single-crystal substrate. The new single crystal can be made of the same material as the substrate or a different material. The substrate with the epitaxial layer is called an epitaxial wafer. MOCVD (Metal-Organic Chemical Vapor Deposition) is a key piece of equipment for manufacturing semiconductor epitaxial wafers. This equipment integrates multiple disciplines such as precision mechanical manufacturing, semiconductor materials, microelectronics, fluid mechanics, heat transfer, and chemistry. It is a highly automated, technologically integrated, and expensive cutting-edge manufacturing equipment in the semiconductor field. It is mainly used for the epitaxial growth of third-generation semiconductor materials such as GaN (Gallium Nitride) and SiC (Silicon Carbide) and is one of the most promising specialized equipment in the microelectronics industry.

[0003] Currently, commonly used MOCVD reaction chambers on the market mainly include planetary reaction chambers, vertical near-coupled spray reaction chambers, and vertical high-speed rotating disk reaction chambers. These types of MOCVD reaction chambers are characterized by the substrates to be deposited being placed horizontally on a horizontal disk. Reactive gases enter the reaction chamber and deposit on the horizontally placed substrates to obtain the product. Taking the German AIXTRON planetary reaction chamber as an example, the reaction chamber is equipped with a rotating graphite base, which is disk-shaped. Several substrates form a group, and multiple substrate groups are evenly arranged circumferentially on the graphite base. The graphite base can revolve around a central point, while each substrate group rotates on its own axis. Group III and V reactants enter from the center of the top cover and flow horizontally outwards radially through a grid along the annular space between the graphite base and the ceiling. The combination of rotation and revolution achieves a uniform growth rate on the surface of each substrate.

[0004] Semiconductor thin film deposition places high demands on the temperature, velocity, and concentration fields of the reactant gases, and the requirements for uniformity across these fields continue to increase as semiconductor chip performance demands rise. Simultaneously, the semiconductor industry has an urgent need for large-area, high-capacity, and high-quality thin film deposition equipment. The limitation of existing reaction chamber structures lies in their difficulty in increasing throughput. This is because increasing throughput requires enlarging the reaction chamber size, but as the chamber size increases, the uniformity of the temperature, velocity, and concentration fields decreases, making it extremely difficult to achieve high throughput.

[0005] Furthermore, the entire MOCVD reaction process takes place within a sealed chamber, and the airtightness of the reaction chamber is a crucial factor affecting the deposition performance of epitaxial films. Due to the complex factors involved in high-temperature control and chamber pressure control within the reaction chamber, achieving a satisfactory seal presents certain challenges. The high-temperature gases used in MOCVD can cause deformation of the sealing material, leading to gas leakage and potentially resulting in decreased process stability, reduced reaction efficiency, and lower film quality. Moreover, the periodic temperature changes within the reaction chamber subject the sealing material to thermal cycling stress, which can cause fatigue damage, leading to cracking or leakage. Therefore, the sealing design for high-temperature MOCVD equipment is critical. Summary of the Invention

[0006] The purpose of this invention is to at least partially overcome the deficiencies of the prior art and provide a novel MOCVD device. This invention may have multiple objectives, but it is not intended to solve all problems or achieve all objectives; solving just one technical problem achieves the objective of this invention.

[0007] Another objective of this invention is to provide an improved sealing MOCVD apparatus with enhanced sealing performance.

[0008] The present invention also aims to provide an improved sealing MOCVD apparatus with improved temperature uniformity, gas flow uniformity and / or gas concentration uniformity.

[0009] Another objective of this invention is to provide an improved sealing MOCVD apparatus that can improve the deposition quality of semiconductor devices.

[0010] The present invention also aims to provide an improved sealing MOCVD equipment, which can increase production capacity, or in other words, can easily increase production capacity while obtaining high-quality, high-performance deposited products.

[0011] To achieve the above-mentioned objectives or one of them, the technical solution of the present invention is as follows:

[0012] An improved sealing MOCVD apparatus, the MOCVD apparatus comprising:

[0013] The reaction chamber shell is used to provide an environment for the reaction gases to undergo chemical reactions;

[0014] The inlet and outlet are used to supply reactant gases into and out of the reaction chamber, respectively; and

[0015] The inner cylinder is located inside the reaction chamber shell, and a reaction gas channel is formed between the inner cylinder and the reaction chamber shell.

[0016] The MOCVD equipment is configured such that the inner cylinder and the reaction chamber shell can rotate relative to each other.

[0017] The reaction chamber shell includes a first shell and a second shell, and a sealing assembly is provided between the first shell and the second shell.

[0018] According to a preferred embodiment of the present invention, at least two first housing coupling elements are provided on the first housing, and at least two second housing coupling elements are provided on the second housing, wherein the first housing coupling elements are configured to be coupled to the second housing coupling elements.

[0019] According to a preferred embodiment of the present invention, a first labyrinth sealing element is provided on the first housing connecting element, and a second labyrinth sealing element is provided on the second housing connecting element;

[0020] The first labyrinth sealing element and the second labyrinth sealing element cooperate with each other.

[0021] According to a preferred embodiment of the present invention, a sealing ring is further provided between the first housing connecting element and the second housing connecting element.

[0022] According to a preferred embodiment of the present invention, a water-cooling tank is provided in the first housing connecting element and / or the second housing connecting element.

[0023] According to a preferred embodiment of the present invention, a first outer cylinder is provided on the side of the first housing facing the second housing, and a heat insulation material is provided between the first housing and the first outer cylinder; a second outer cylinder is provided on the side of the second housing facing the first housing, and a heat insulation material is provided between the second housing and the second outer cylinder.

[0024] With the first shell and the second shell joined together, the first outer cylinder and the second outer cylinder form the outer cylinder.

[0025] According to a preferred embodiment of the present invention, the first housing connecting element is simultaneously fixed to the first housing and the first outer cylinder;

[0026] A first L-shaped element and a second L-shaped element are provided between the first housing and the first outer cylinder, and the first L-shaped element and the second L-shaped element are connected and fixed to each other;

[0027] The first L-shaped element is fixedly connected to the first outer cylinder, and the second L-shaped element is fixedly connected to the first housing connecting element.

[0028] According to a preferred embodiment of the present invention, the second housing connecting element is simultaneously fixed to the second housing and the second outer cylinder;

[0029] A first L-shaped element and a second L-shaped element are provided between the second housing and the second outer cylinder, and the first L-shaped element and the second L-shaped element are connected and fixed to each other;

[0030] The first L-shaped element is fixedly connected to the second outer cylinder, and the second L-shaped element is fixedly connected to the second housing connecting element.

[0031] According to a preferred embodiment of the present invention, the first L-shaped element and / or the second L-shaped element are provided with reinforcing ribs.

[0032] According to a preferred embodiment of the present invention, the MOCVD apparatus further includes a decompression chamber configured to provide an environment below atmospheric pressure, and the reaction chamber shell is disposed within the decompression chamber;

[0033] The decompression chamber includes a first chamber and a second chamber. An inflatable sealing bladder is provided at the junction between the first chamber and the second chamber. The inflatable sealing bladder is connected to an air pump through a gas pipeline.

[0034] The improved sealing MOCVD equipment of this invention employs multiple seals, and heat insulation and cooling are carried out near the sealing components, which effectively suppresses the deformation and fatigue damage of the sealing material, prevents gas leakage caused by seal failure, and improves process stability.

[0035] According to the improved sealed MOCVD apparatus of the present invention, an inner cylinder is provided inside the reaction chamber shell, and a reaction gas channel is formed between the inner cylinder and the reaction chamber shell. Based on the shape of the inner wall surface of the inner cylinder and the reaction chamber shell, a reaction gas channel with a constant cross-section is easily obtained. Therefore, the reaction gas supplied to the reaction gas channel through the gas inlet can maintain a uniform velocity field and concentration field. Moreover, the circumferential arrangement of the heating elements within the inner cylinder or the reaction chamber shell wall also easily achieves a uniform temperature field. Therefore, the improved sealed MOCVD apparatus of the present invention has improved temperature uniformity, gas flow uniformity, and / or gas concentration uniformity, thereby improving the deposition quality of semiconductor devices. More importantly, the coaxial arrangement of the inner cylinder and the reaction chamber shell allows for easy increase in production capacity by increasing the axial and radial dimensions of the apparatus (increasing the area that can support the substrate). This increase in apparatus size has virtually no impact on the uniformity of the velocity field, concentration field, and temperature field of the gas within the reaction chamber shell, effectively solving the problem of current limitations on the large-scale production of epitaxial equipment in the semiconductor industry. Therefore, the improved sealed MOCVD apparatus of the present invention can increase production capacity while simultaneously ensuring high quality and high performance of the deposited products. Attached Figure Description

[0036] Figure 1 This is a cross-sectional schematic diagram of a planetary reaction chamber in the prior art;

[0037] Figure 2 for Figure 1 A top view of the graphite base of the planetary reaction chamber in the image;

[0038] Figure 3 This is a cross-sectional schematic diagram of a positive differential pressure MOCVD apparatus according to an embodiment of the present invention;

[0039] Figure 4 for Figure 3 BB cross-section diagram of the positive differential pressure MOCVD equipment;

[0040] Figure 5 An MOCVD apparatus according to another embodiment of the present invention is shown, with Figure 4 Correspondingly, however, the decompression chamber was removed;

[0041] Figure 6 This is a cross-sectional schematic diagram of an MOCVD apparatus according to an embodiment of the present invention, wherein a substrate is mounted on the outer periphery of an inner cylinder;

[0042] Figure 7 for Figure 6 CC cross-section of the MOCVD equipment in the image;

[0043] Figure 8 This is a cross-sectional schematic diagram of an MOCVD apparatus according to an embodiment of the present invention, wherein the substrate is simultaneously mounted on the outer periphery of the inner cylinder and the inner side of the reaction chamber shell;

[0044] Figure 9 for Figure 8 DD cross-sectional view of the MOCVD equipment in the image;

[0045] Figure 10 An MOCVD apparatus according to another embodiment of the present invention is shown, with Figure 9 Correspondingly, the second heating element has a different configuration;

[0046] Figure 11 This is a cross-sectional schematic diagram of an MOCVD apparatus according to an embodiment of the present invention, wherein the substrate is mounted on the inner side of the reaction chamber shell;

[0047] Figure 12 for Figure 11 EE cross-sectional view of the MOCVD equipment in the diagram;

[0048] Figure 13 The sealing and joining method of the first and second housings of the reaction chamber shell according to an embodiment of the present invention is shown;

[0049] Figure 14 for Figure 13 A magnified view of a portion of the image;

[0050] Figure 15 A schematic cross-sectional view of a pull-out decompression chamber according to an embodiment of the present invention;

[0051] Figure 16 This is a cross-sectional schematic diagram of an MOCVD apparatus according to an embodiment of the present invention;

[0052] Figure 17 This is a cross-sectional schematic diagram of an MOCVD apparatus according to an embodiment of the present invention;

[0053] Figure 18 for Figure 17 GG cross-section of the MOCVD equipment in the image;

[0054] Figure 19 This is a cross-sectional schematic diagram of an MOCVD apparatus according to an embodiment of the present invention;

[0055] Figure 20 for Figure 19 HH cross-sectional view of the MOCVD equipment in the middle;

[0056] Figure 21 A schematic cross-sectional view of the shaft of an MOCVD device according to an embodiment of the present invention;

[0057] Figure 22 This is a cross-sectional schematic diagram of an MOCVD apparatus according to an embodiment of the present invention;

[0058] Figure 23 This is a cross-sectional schematic diagram of an MOCVD apparatus according to an embodiment of the present invention.

[0059] List of reference numerals in the attached diagram:

[0060] 11 Actuating device; 12 Drive shaft; 13 Active rotating unit; 14 Driven rotating unit; 15 Rotating shaft; 16 Bearing; 17 Supporting element; 31 First housing; 32 Second housing; 41 Inner cylinder; 42 First heat insulation material; 43 First heating element; 44 Outer cylinder; 45 Second heat insulation material; 46 Heating element support rod; 47 Annular heating belt; 48 End heat insulation material; 49 Central support ring; 50 Fixing assembly; 51 Reaction gas channel; 52 Inlet element; 53 Exhaust element; 54 Separating element; 55 Central support shaft; 56 Insulating sheet; 57 Support cylinder; 58 Support rod; 60 Rotary seal; 61 Decompression chamber; 62 First vacuum pump; 66 Double-layer water-cooled pipe; 67 Outer side 68. Channel; 69. Inner channel; 70. Slip ring; 71. Wire; 72. First mounting position; 73. Substrate; 74. Second heating element; 75. Heating element fixing part; 76. Second mounting position; 81. Support surface; 82. Frame; 83. Traveling wheel; 91. Horizontal wall; 92. Vertical wall; 93. Inflatable sealing bladder; 94. Inflatable pump; 95. Gas pipeline; 99. First hull; 100. Second hull; 101. Lifting assembly; 102. First hull connecting element; 103. Second hull connecting element; 104. First labyrinth sealing element; 105. Second labyrinth sealing element; 106. Sealing ring; 107. Water cooling tank; 108. First L-shaped element; 109. Second L-shaped element; 110. Reinforcing rib; 111. Fixing bolt. Detailed Implementation

[0061] Exemplary embodiments of the present invention are described in detail below with reference to the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements. Furthermore, in the following detailed description, numerous specific details are set forth for ease of explanation to provide a thorough understanding of the embodiments disclosed herein. However, it will be apparent that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and apparatuses are illustrated to simplify the drawings.

[0062] Figure 3 , 4 The basic structure of a positive pressure differential MOCVD apparatus according to an embodiment of the present invention is shown in the figure. The positive pressure differential MOCVD apparatus mainly includes a decompression chamber 61, a reaction chamber shell, an inlet and an outlet, an inner cylinder 41, an actuator 11, and a transmission mechanism. The decompression chamber 61 is configured to provide an environment below atmospheric pressure. The reaction chamber shell is disposed within the decompression chamber 61 to provide an environment for the chemical reaction of the reaction gases; typically, this environment is a high-temperature, low-pressure environment. The inner cylinder 41 is disposed within the reaction chamber shell, and a reaction gas channel 51 is formed between the inner cylinder 41 and the reaction chamber shell. Figure 3-4As shown, the inner cylinder 41 is generally cylindrical, and the inner wall of the reaction chamber shell is also generally cylindrical. The inner cylinder 41 and the reaction chamber shell are arranged coaxially, so the reaction gas channel 51 is generally annular. In addition to the above parts, the complete MOCVD equipment also includes a gas transport system, a base support, and an exhaust gas treatment system.

[0063] The reaction chamber shell is hollow, allowing the inner cylinder 41 to be inserted inside. The reaction chamber shell is primarily composed of a cavity wall, which includes: an outer shell; an outer cylinder 44, disposed within the outer shell and fixed relative to it; and a second insulating material 45, disposed between the outer shell and the outer cylinder 44. The outer shell, as the outermost layer of the reaction chamber shell, includes a first shell 31 and a second shell 32. The first shell 31 and the second shell 32 can switch between a first state where they are joined together to seal the inner cylinder 41 and a second state where they are separated to expose the inner cylinder 41. The first shell 31 and the second shell 32 ensure the airtightness of the reaction chamber shell's interior from the external environment. A sealing assembly is provided between the first shell 31 and the second shell 32. Since the outer shell is divided into two parts, correspondingly, the outer cylinder 44 and the second insulating material 45 between the outer shell and the outer cylinder 44 should also be composed of two parts. Optionally, end caps are installed at both ends of the outer cylinder to form a cavity, ensuring the airtightness of the reaction chamber shell's interior. Figure 4 As shown, both the first shell 31 and the second shell 32 are semi-cylindrical, and the two are combined to form a cylindrical shape.

[0064] The main reaction equipment of the MOCVD apparatus is entirely located within the decompression chamber 61. The decompression chamber 61 is vented externally by a vacuum pump to maintain a low internal pressure, controlling the pressure environment to the optimal level required for epitaxial processes. Specifically, the MOCVD apparatus is configured to maintain a first pressure within the reaction chamber shell higher than a second pressure within the decompression chamber 61, and both the first and second pressures are lower than atmospheric pressure. The MOCVD apparatus also includes a first vacuum pump 62, which is fluidly connected to the decompression chamber 61 and is used to generate and maintain the second pressure within the decompression chamber 61. Figure 3 As shown.

[0065] Accordingly, the present invention also provides a positive differential MOCVD method using the aforementioned positive differential MOCVD equipment. The MOCVD method includes: generating a second pressure below atmospheric pressure within a decompression chamber 61; and generating a first pressure below atmospheric pressure but above the second pressure within a reaction chamber shell. Here, the first pressure is at least 200 Pa or 300 Pa higher than the second pressure. During the operation of the MOCVD equipment, the decompression chamber 61 is continuously evacuated to maintain the second pressure within it; and a first pressure above the second pressure is maintained within the reaction chamber shell by supplying reactive gas. Using the above equipment, the MOCVD method allows the reaction chamber shell to be in an open state before generating the second pressure below atmospheric pressure within the decompression chamber 61; then, after generating the second pressure below atmospheric pressure within the decompression chamber 61, the reaction chamber shell is closed. Thus, while the decompression chamber generates operating pressure, the reaction chamber shell obtains a suitable operating pressure. When the MOCVD equipment is operating, due to the supply of reactive gas to the reaction chamber shell, a first pressure above the second pressure naturally forms within it.

[0066] The inner cylinder 41 or the reaction chamber shell, at least the portions facing each other, comprise graphite material, tungsten material, or molybdenum material with a SiC coating. To make the inner cylinder 41 and outer cylinder 44 resistant to high temperatures, they are typically graphite cylinders coated with SiC, but high-temperature resistant metal materials such as tungsten and molybdenum can also be used. The thickness of the coating can be determined based on the mechanical properties of the material.

[0067] An inlet and an outlet are disposed on the reaction chamber shell, used to supply reactant gas into the reaction chamber shell and to discharge gas from the reaction chamber shell, respectively. In this embodiment, an inlet element 52 is disposed on the inlet, and an outlet element 53 is disposed on the outlet. The inlet element 52 and the outlet element 53 extend from outside the reaction chamber shell through the cavity wall of the reaction chamber shell into the reactant gas channel 51. The inlet element 52 is configured to guide the reactant gas into the reactant gas channel 51 and flow along the reactant gas channel 51 to the outlet. Figure 4 As shown by the middle arrow, the waste gas after reaction in the reaction gas channel 51 is discharged from the exhaust element 53. In addition to the intake element 52 and the exhaust element 53, the reaction chamber shell is also provided with a partition element 54, which is located in the reaction gas channel 51, between the intake element 52 and the exhaust element 53, to prevent the exhaust gas from flowing back to the intake side.

[0068] like Figure 4As shown, the intake element 52 and exhaust element 53 extend radially from the outside of the reaction chamber shell through the cavity wall of the reaction chamber shell into the reaction gas channel 51. The intake element 52 and exhaust element 53 are arranged adjacent to each other in the circumferential direction of the reaction chamber shell. The adjacent intake element 52, exhaust element 53, and the separating element 54 between the intake element 52 and exhaust element 53 in the circumferential direction of the reaction chamber shell form a set of ventilation elements. Figure 4 In this embodiment, the MOCVD equipment includes only one set of ventilation elements (full-circuit flow). In this set of ventilation elements, the outlet of the inlet element 52 can be a longitudinally elongated outlet, i.e., there is only one inlet element and one outlet. The outlet is located within the reaction gas channel 51 and extends along the longitudinal axis of the inner cylinder 41, preferably extending along the entire longitudinal length of the inner cylinder 41 to ensure the uniformity of the reaction gas within the reaction gas channel 51. Alternatively, in this set of ventilation elements, there can be multiple inlet elements 52, with their outlets located within the reaction gas channel 51, and these multiple inlet elements 52 are evenly distributed along the longitudinal axis of the inner cylinder 41 to ensure the uniformity of the reaction gas within the reaction gas channel 51. The exhaust element 53 can have the same form and arrangement as the inlet element 52.

[0069] Depend on Figure 4 The illustrated embodiment can be used to derive a ventilation element arrangement. Similarly, adjacent inlet elements 52, exhaust elements 53, and the separating element 54 between inlet elements 52 and exhaust elements 53 in the circumferential direction of the reaction chamber shell form a group of ventilation elements. The MOCVD equipment includes multiple groups of ventilation elements, such as two or three groups, which are evenly distributed in the circumferential direction of the reaction chamber shell. In the case of three groups, the three groups of ventilation elements are arranged on the reaction chamber shell at 120-degree angle intervals. Then, the reaction gas entering from the inlet element 52 of the first group of ventilation elements flows through the reaction gas channel 51 at a 120-degree angle and is discharged from the exhaust element 53 of the second group of ventilation elements; the reaction gas entering from the inlet element 52 of the second group of ventilation elements flows through the reaction gas channel 51 at a 120-degree angle and is discharged from the exhaust element 53 of the third group of ventilation elements; and the reaction gas entering from the inlet element 52 of the third group of ventilation elements flows through the reaction gas channel 51 at a 120-degree angle and is discharged from the exhaust element 53 of the first group of ventilation elements.

[0070] Figure 5 An embodiment of another arrangement of the intake element 52 and the exhaust element 53 (semi-circular flow) is given, as shown in the figure. The intake element 52 includes a first intake element and a second intake element. Figure 5The left and right intake elements 52 are arranged in the middle, the first intake element and the second intake element are adjacent in the circumferential direction of the reaction chamber shell, and a separator element 54 is provided between the first intake element and the second intake element; the exhaust element 53 includes a first exhaust element and a second exhaust element. Figure 5 The left and right exhaust elements 53 of the reaction chamber shell are adjacent to each other in the circumferential direction, and a separator 54 is provided between the first and second exhaust elements; the intake element 52 and the exhaust element 53 are arranged approximately opposite each other in the radial direction of the reaction chamber shell. In this way, the reaction gas entering from the first intake element flows through the reaction gas channel 51 at a 180-degree angle and is discharged from the first exhaust element, and the reaction gas entering from the second intake element flows in the opposite direction through the reaction gas channel 51 at a 180-degree angle and is discharged from the second exhaust element.

[0071] The position of the inlet element 52 can be designed in different locations according to the working environment and specific operating conditions. In actual use, it can be set in the lower part of the outer shell of the reaction chamber shell, which is beneficial to suppressing natural convection in the channel. The reaction gas enters the reaction gas channel through the inlet element, is heated and undergoes a chemical reaction in the channel, and performs thin film deposition. Since the cross-sectional area of ​​the channel remains constant during the reaction gas flow process, the gas flow uniformity is very good. It should be noted that since the inner cylinder and the reaction chamber shell can rotate relative to each other, there should be a gap between the separator element 54 and the inner cylinder 41 when the inner cylinder 41 rotates. This gap should be a small gap to prevent affecting the rotation of the inner cylinder. The separator element 54 can be a thin-walled baffle fixed on the outer cylinder. The function of the separator element 54 is to prevent the mixing of intake and exhaust gases. In a preferred embodiment, air holes can be provided on both sides of the separator element 54, and a carrier gas (nitrogen) is injected into the air holes at a certain velocity to form a gas barrier layer. On the one hand, the vents on the intake side are used to block the flow of intake air towards exhaust air, thus avoiding the waste of organic metal source; on the other hand, the vents on the exhaust side are used to block the flow of exhaust air towards intake air, thus avoiding the source gas from being contaminated.

[0072] Advantageously, the channel at the outlet of the air inlet element 52 is curved relative to the axial direction of the air inlet element 52, such that the flow direction of the reaction gas supplied from the outlet is approximately tangent to a circle centered on a point on the longitudinal axis of the inner cylinder 41. Furthermore, the air inlet element 52 is a multi-channel air inlet element, the multi-channel existing in the form of a sleeve. The multi-channel has three or more channels because there are multiple types of reaction gases, and each layer of the sleeve carries a different gas.

[0073] Furthermore, the portion of the intake element 52 extending into the reaction gas channel 51 includes a radial section and a bent section relative to the radial section; the bent section is provided with a first outlet and a second outlet. The flow direction of the reaction gas supplied from the first outlet is approximately tangent to a circle centered on a point on the longitudinal axis of the inner cylinder 41, and the flow direction of the reaction gas supplied from the second outlet is approximately pointing towards the longitudinal axis of the inner cylinder 41, thus forming an air curtain. These vertically downward-facing nozzles (second outlets) on the intake side prevent exhaust gas from leaking into the intake section, forming an air curtain to block exhaust gas from entering the intake side through the gap of the separating element 54.

[0074] Advantageously, the MOCVD apparatus is configured such that the inner cylinder 41 and the reaction chamber shell are rotatable relative to each other. This relative rotation can be achieved in several ways: the inner cylinder 41 is configured to rotate about its longitudinal axis, and the reaction chamber shell is configured to remain stationary during operation of the MOCVD apparatus; or at least a portion of the reaction chamber shell (outer cylinder or the entire reaction chamber shell) is configured to rotate about its longitudinal axis, and the inner cylinder 41 is configured to remain stationary during operation of the MOCVD apparatus; or at least a portion of the reaction chamber shell (outer cylinder or the entire reaction chamber shell) and the inner cylinder 41 are configured to rotate simultaneously, but in different directions or at different speeds. Figure 3 In the example shown, the inner cylinder 41 can rotate actively, while the reaction chamber shell remains stationary.

[0075] It should be noted that the relative rotation of the inner cylinder 41 and the reaction chamber shell is not necessary; they can also remain relatively stationary. For example, they can remain absolutely stationary during the operation of the MOCVD equipment, which can also achieve the effects of the present invention to a certain extent, as long as the reaction gas channel 51 has approximately the same cross-section along the direction of reaction gas flow. When the reaction gas channel has a constant cross-section, the flow velocity of the reaction gas in the channel remains essentially constant, thereby obtaining a uniform flow field along the flow direction. However, relative rotation can make the concentration of carrier gas / reaction gas in contact with the wafer substrate more uniform.

[0076] To achieve the operating temperature of MOCVD, the MOCVD equipment also includes heating elements, which can be disposed inside the inner cylinder 41 and / or within the cavity wall of the reaction chamber shell. Generally, the heating elements can include: a plurality of parallel heating strips, all parallel to the longitudinal axis of the inner cylinder 41 and circumferentially distributed relative to the longitudinal axis of the inner cylinder 41, such as... Figure 3-4 As shown; or multiple annular heating bands arranged in parallel, wherein the multiple annular heating bands are axially distributed relative to the longitudinal axis of the inner cylinder 41, such as... Figure 22As shown; or multiple heating blocks, which are evenly distributed on a selected circumferential surface surrounding the longitudinal axis of the inner cylinder 41, not shown in the figure; or any combination of two of multiple heating strips, multiple annular heating belts, and multiple heating blocks, such as... Figure 17-20 The heating element can be a silicon molybdenum rod, tungsten wire, or molybdenum wire; the material can be silicon molybdenum, tungsten, or molybdenum; and the shape can be a block, strip, or bar, etc. The heating power can be uniform or non-uniform. The size of the heating element is designed according to the gas temperature in the reaction gas channel, and the heating power can be adjusted to ensure that the temperature difference on the substrate surface is less than 1°C.

[0077] Since both the reaction chamber shell and the inner cylinder 41 are approximately cylindrical, and the heating elements are arranged approximately evenly inside the inner cylinder 41 and / or within the cavity wall of the reaction chamber shell, the heat generated by the heating elements is transferred radially from the reaction chamber shell or the inner cylinder 41 to the reaction gas channel 51. The heating elements are preferably silicon molybdenum rods, tungsten wires, or molybdenum wires.

[0078] Both the interior of the inner cylinder 41 and the cavity wall of the reaction chamber are lined with heat-insulating materials, such as... Figure 3-4 As shown, the center of the inner cylinder 41 is penetrated by the rotating shaft 15, and the inner cylinder 41 and the rotating shaft 15 are relatively fixed so that the inner cylinder 41 and the rotating shaft 15 can rotate together. A heat-insulating material is provided between the outer wall of the inner cylinder 41 and the rotating shaft 15. The inner cylinder 41 is connected and fixed to the first heating element 41, the first heat-insulating material 42, and the rotating shaft 15 as a whole by a support element 17. The support element 17 should be made of a material with good rigidity and low thermal conductivity, such as zirconium oxide or other high-temperature resistant, non-decomposing ceramic materials. The first heating element 41 and the first heat-insulating material 42 are mechanically connected and fixed together with the high-temperature resistant rotating inner cylinder by the support element 17. Simultaneously, the other side of the support element 17 is mechanically connected and fixed to the rigid rotating shaft 15. The rotating shaft 15 is equipped with bearings 16, which support and fix the entire inner cylinder 41. The rotating shaft 15 can be made of stainless steel or other materials, and a cooling structure is provided inside, using liquid cooling or air cooling to efficiently cool the rigid rotating shaft.

[0079] by Figure 3-7 Referring to the embodiment, it can be seen that the inner cylinder 41 is a hollow inner cylinder, and the heating element is disposed inside the inner cylinder 41; the heating element includes a plurality of heating strips arranged in parallel, the plurality of heating strips being parallel to the longitudinal axis of the inner cylinder 41 and distributed circumferentially relative to the longitudinal axis of the inner cylinder 41; and the two ends of each heating strip are fixed to the two ends of the inner cylinder 41 along the longitudinal axis. Figure 8-12In one embodiment, a heating element is also disposed in the cavity wall of the reaction chamber shell. The heating element is a second heating element 73. The second heating element 73 also includes a plurality of heating strips arranged in parallel. The plurality of heating strips are parallel to the longitudinal axis of the reaction chamber shell and distributed circumferentially relative to the longitudinal axis of the reaction chamber shell. Each heating strip is fixed in the cavity wall of the reaction chamber shell by a heating element fixing part 74.

[0080] The heating strips in this invention can be designed in series and parallel combinations according to process requirements. This design has two advantages: first, it can minimize energy consumption by selecting the series and parallel connection scheme with the lowest energy consumption for each working condition; second, different locations within the inner cylinder have different requirements for temperature field uniformity, and this design allows for targeted adjustment of the electric heating power. The heating element of this invention is located inside the inner cylinder supporting the substrate, providing uniform heating. Simultaneously, the double thermal insulation structure on both the inner and outer cylinders ensures that the heat from the heating element is almost entirely prevented from dissipating to the external environment, minimizing energy loss. Compared to traditional MOCVD equipment, energy consumption is reduced by at least an order of magnitude, significantly reducing equipment operating costs and substrate epitaxial deposition costs from an operational perspective.

[0081] The transmission mechanism is described below. The actuator 11 drives the inner cylinder 41 to rotate. The transmission mechanism can be a simple drive shaft or a magnetic coupler. Thus, the actuator 11 is connected to the inner cylinder 41 via the magnetic coupler. Figure 3 As shown, or the actuating device 11 is connected to the inner cylinder 41 via a drive shaft 12, such as... Figure 22 As shown, the drive shaft 12 is connected to the rotating shaft 15, and a rotating seal 60 is provided at the portion of the drive shaft 12 that passes through the reaction chamber shell. The transmission mechanism may also have other structures. The magnetic coupler includes an active rotating unit 13 disposed outside the reaction chamber shell and a driven rotating unit 14 disposed inside the reaction chamber shell. The active rotating unit 13 drives the driven rotating unit 14 in a non-contact manner. The active rotating unit 13 is connected to the actuating device 11, and the driven rotating unit 14 is connected to the inner cylinder 41.

[0082] like Figure 6 , 7 As shown, a first mounting position 71 for mounting the substrate 72 is provided on the outer periphery of the inner cylinder 41, such as... Figure 11 , 12 As shown, a second mounting position 75 for mounting the substrate 72 is provided on the inner side (outer cylinder 44) of the reaction chamber shell. Specifically, the mounting position is provided on the surface of the outer cylinder 44 facing the inner cylinder 41, as shown in the figure. Figure 8-10As shown, a first mounting position 71 for mounting a substrate 72 is provided on the outer periphery of the inner cylinder 41, and a second mounting position 75 for mounting a substrate 72 is provided on the inner side of the reaction chamber shell (outer cylinder 44).

[0083] There are multiple mounting positions on the inner cylinder 41 or the reaction chamber shell, which are evenly distributed. Specifically, the mounting positions can be arranged in a matrix or in multiple rows, with adjacent rows staggered. Each mounting position can be a fixing groove, which serves to fix the substrate in place as the inner cylinder rotates around its axis.

[0084] Taking the inner cylinder rotation as an example, maintaining a uniform rotation speed during operation ensures the temperature uniformity of the large-size cylinder wall, thereby achieving uniform deposition on the wafer substrate surface. In practice, the inner cylinder rotation speed can be adjusted as needed, or the inner cylinder can be kept stationary. The cross-sectional area of ​​the annular reaction gas channel in the cylindrical reaction chamber remains constant along the flow direction, ensuring the uniformity of the gas velocity field. Simultaneously, the rotating design of the inner cylinder supporting the substrate ensures the uniformity of temperature between the inner cylinder and the substrate surface, as well as the uniformity of reactants on the substrate surface, solving the problem of uneven substrate deposition after the MOCVD equipment becomes larger. Furthermore, the increase in the axial dimension of the reaction chamber shell has almost no significant impact on the temperature field, velocity field, and reactant diffusion concentration field of the reaction gas in the MOCVD equipment. Therefore, it can greatly improve the production capacity of MOCVD epitaxial wafers while ensuring very high epitaxial deposition quality, effectively overcoming the limitations of MOCVD equipment production capacity in the semiconductor industry.

[0085] Preferably, the distribution density or power density of the heating element near the air inlet or exhaust port is greater than that at a location farther from the air inlet or exhaust port. (Refer to...) Figure 9 , 10 The distribution density of the second heating element 73 near the inlet and outlet (inlet element 52 and outlet element 53) is greater than that at other locations. This is because, in some designs, the outer cylinder 44 is stationary, and the lower inlet temperature leads to a lower temperature of the substrate 72 on the outer cylinder 44 near the inlet. Therefore, it is necessary to install or add dedicated heating elements near the inlet of the outer cylinder 44 to increase the local temperature of the outer cylinder and ensure temperature uniformity along the 360° circumference of the entire outer cylinder. Since the annular reaction gas channel is very small, the overall temperature difference between the inner and outer cylinders is not significant. Heating elements can be arranged at other locations on the outer cylinder according to temperature requirements, or no heating elements may be arranged, or heating elements may only be arranged locally (e.g., Figure 10As shown in the figure, both the inner and outer cylinders are heated by heating elements inside the inner cylinder, and heating elements are only arranged locally near the air inlet of the outer cylinder for compensation, so that the temperature difference of the entire outer cylinder is within 1°C, which meets the temperature range required for high-quality thin film deposition on the outer cylinder substrate.

[0086] Even without a substrate on the outer cylinder 44, it can still be heated to compensate for the cooling effect of the lower-temperature reaction gas on the inner cylinder. The heating power of the heating element in the outer cylinder can be uniform or non-uniform along the circumferential direction. Non-uniform heating is generally used in the lower-temperature part of the reaction gas inlet, employing a larger compensating heating power or a denser heating wire design. Along the direction of reaction gas movement within the gas channel, as the gas temperature gradually increases, the compensating heating power of the heating element in the outer cylinder gradually decreases to ensure a more uniform temperature across the entire substrate surface, creating a more uniform temperature environment for the reaction chamber. Another function of the auxiliary heating element in the outer cylinder is to accelerate the system response speed of MOCVD during temperature switching. Based on the inner cylinder surface temperature and temperature switching requirements, the power and switching of the auxiliary heating element can be controlled in advance to ensure that the system achieves the heating or cooling process more quickly.

[0087] exist Figure 13 In this configuration, a first housing 31 is located vertically above a second housing 32, which remains fixed. The second housing is mounted on a frame 82, which is situated on a support surface 81. The first housing 31 is configured to move relative to the second housing 32. Two first housing coupling elements 102 are provided on the first housing 31, and two second housing coupling elements 103 are provided on the second housing 32. The first housing coupling elements 102 are configured to engage with the second housing coupling elements 103. The MOCVD equipment also includes two lifting assemblies 101 connected to the first housing coupling elements 102, used to raise or lower the first housing 31. The lifting assembly 101 can be a hydraulic rod. During substrate loading / unloading, the lifting assembly 101 drives the first housing 31 upwards, thereby opening the reaction chamber shell and creating space for loading / unloading the wafer substrate.

[0088] The first housing connecting element 102 is provided with a first labyrinth sealing element 104, and the second housing connecting element 103 is provided with a second labyrinth sealing element 105. The first labyrinth sealing element 104 and the second labyrinth sealing element 105 cooperate with each other. A sealing ring 106 is also provided between the first housing connecting element 102 and the second housing connecting element 103. Advantageously, a water cooling tank 107 is provided in the first housing connecting element 102 and / or the second housing connecting element 103.

[0089] The entire sealing structure includes a first housing connecting element, a second housing connecting element, a first labyrinth sealing element, a second labyrinth sealing element, a water-cooling tank, and a sealing ring. The first and second housing connecting elements are two straight sealing edges that form a single sealing unit. These two elements (straight sealing edges) are axially continuous structures protruding from both sides, forming the sealing structure for the reaction chamber shell. The first and second housing connecting elements (straight sealing edges) are respectively machined with the first and second labyrinth sealing elements (labyrinth sealing strips), which are installed together in an alternating pattern, achieving a good multi-layered sealing effect. Simultaneously, another O-ring sealing structure is set on the outside of the labyrinth sealing structure. To prevent overheating, a water-cooling tank is designed inside the O-ring. Cooling water ensures that the rubber and other materials of the O-ring do not overheat, maintaining a good sealing effect at all times. This multi-layered sealing structure combined with water cooling effectively guarantees the sealing effect of the reaction chamber shell.

[0090] The following reference Figure 13 , 14 The connection between the first housing connecting element and the second housing connecting element is described. To enhance the connection and fixation, the first housing connecting element 102 is simultaneously fixed to both the first housing 31 and the first outer cylinder. A first L-shaped element 108 and a second L-shaped element 109 are provided between the first housing 31 and the first outer cylinder, and the first L-shaped element 108 and the second L-shaped element 109 are connected and fixed to each other by fixing bolts 111. The first L-shaped element 108 is fixedly connected to the first outer cylinder, and the second L-shaped element 109 is fixedly connected to the first housing connecting element 102. Optionally, the second housing connecting element 103 also adopts the same design (not shown in the figure). The second housing connecting element 103 is simultaneously fixed to both the second housing 32 and the second outer cylinder. A first L-shaped element 108 and a second L-shaped element 109 are provided between the second housing 32 and the second outer cylinder, and the first L-shaped element 108 and the second L-shaped element 109 are connected and fixed to each other by fixing bolts 111. The first L-shaped element 108 is fixedly connected to the second outer cylinder, and the second L-shaped element 109 is fixedly connected to the second housing connecting element 103. Preferably, the first L-shaped element 108 and / or the second L-shaped element 109 are provided with reinforcing ribs 110. The first L-shaped element 108 and the second L-shaped element 109 can be made of zirconia, which is resistant to high temperature, has high strength and low thermal conductivity. Considering that zirconia ceramic has weak bending resistance, triangular reinforcing ribs are processed at intervals to ensure the rigidity of the zirconia support structure.

[0091] To enable the epitaxial growth process of third-generation semiconductor substrates, both the high-temperature resistant inner cylinder 41 and the high-temperature resistant outer cylinder 44 are high-temperature regions. The temperature of the high-temperature resistant outer cylinder can reach over 1200℃, while the outer first and second shells are generally made of stainless steel. If the high-temperature resistant outer cylinder 44 were directly connected to the first and second shells, it would cause the first and second shells to overheat. Therefore, considering the structural strength requirements, the connection structure between the two adopts a double L-shaped axial outer edge (double L-shaped elements, running through the entire axial length) connection method. It should be noted that the second L-shaped element 109 is also fixed to the first shell 31 or the second shell 32, so that the first outer cylinder and the second outer cylinder can be fixed to the outer shell by means of the two L-shaped elements.

[0092] In the preceding embodiments, both the first and second housings are semi-cylindrical in shape. However, the first and second housings can be petal-shaped. The two-petal structure can be designed as uniformly divided petals, or based on petals at any angle on the circumference, with one petal serving as the opening area. Two 180° petal opening structures are a common method that facilitates fabrication and substrate installation and removal. Other angle combinations of petal opening areas (such as a combination of a 45° petal and a 315° petal) are also possible. The optimal combination can be selected based on the strength requirements of the cylindrical reaction chamber shell structure and the substrate process. Specifically, both the first housing 31 and the second housing 32 are fan-shaped, and they are combined to form a cylinder. The angle of the fan formed by the first housing 31 is less than 180 degrees, and the angle of the fan formed by the second housing 32 is greater than 180 degrees. In this way, the first housing 31 can be removed from the second housing 32 for substrate loading and unloading.

[0093] Once the first housing is fully opened, the substrate on the high-temperature resistant inner cylinder can be loaded and removed using either an automated robotic arm or manual methods. After the substrate is loaded or removed from the highest surface, the inner cylinder can be rotated so that the next adjacent surface moves to the highest point. This process is repeated until all surfaces have been loaded or removed.

[0094] Figure 15A schematic diagram of a pull-out decompression chamber is shown. The decompression chamber 61 includes a first chamber 99 and a second chamber 100. The first chamber 99 is approximately L-shaped and includes a horizontal wall 91 and a vertical wall 92. An inflatable sealing bladder 93 is provided at the junction of the first chamber 99 and the second chamber 100. The inflatable sealing bladder 93 is connected to an air pump 94 via a gas pipeline 95. The first chamber 99 remains fixed. The second chamber 100 is mounted on a frame 82, which has multiple wheels 83. The decompression chamber has a push-pull opening structure, and the sealing surface is a three-dimensional sealing surface. The decompression chamber 61 consists of two sealed parts: the first chamber 99 and the second chamber 100. The first chamber 99 is the fixed part, and the second chamber 100 can slide to the right via the rigid metal frame 82 below and the wheels 83. After sliding, the decompression chamber is in an open state. The two parts are sealed together by an inflatable sealing bladder 93, which has a three-dimensional structure. After the two parts of the decompression chamber are closed, an air pump inflates the inflatable sealing bladder 93 through a gas pipeline, causing the bladder to change from a flat state to a full state. A certain gas pressure is maintained inside the inflatable sealing bladder 93 to ensure a good sealing effect. Before opening the two parts of the decompression chamber, the inflatable sealing bladder 93 needs to be depressurized first.

[0095] Alternatively, the reaction chamber shell can be sealed using an inflatable sealing bladder. The first shell and the second shell are the outermost structures of the entire reaction chamber shell, and the two can be sealed together by an inflatable sealing bladder to create a sealed space for the reaction chamber shell.

[0096] Figure 16-20 Section 22 illustrates several different forms, arrangements, and support methods for the heating elements. These are several embodiments of zoned heating element placement, where the interior of the inner cylinder 41 or the interior of the reaction chamber shell is divided into different regions. The heating elements exist in at least two regions with different forms, different distribution densities, or different power densities. Specifically, the distribution density or power density of the heating elements near the air inlet or exhaust port can be greater than that at a location away from the air inlet or exhaust port. Alternatively, the heating elements may have different distribution densities or power densities at the ends of the inner cylinder 41 along its longitudinal axis and at the center of the inner cylinder 41 along its longitudinal axis. For example, the heating elements are disposed inside the inner cylinder 41, and the interior of the inner cylinder 41 includes a first region near the center of the inner cylinder 41 along its longitudinal axis and two second regions near the ends of the inner cylinder 41 along its longitudinal axis. In the first and second regions, the heating elements have different forms and arrangements.

[0097] exist Figure 16-18In this embodiment, the rotating shaft 15 is disposed at both ends of the inner cylinder 41 along its longitudinal axis. The rotating shaft 15 does not penetrate the center of the inner cylinder 41, and the inner cylinder 41 is fixed relative to the rotating shaft 15 so that the inner cylinder 41 and the rotating shaft 15 can rotate together. Heating elements are fixedly disposed inside the inner cylinder 41. The heating elements include a first heating element 43 and an annular heating band 47. The first heating element 43 is designed as multiple parallel heating strips in a first region, all parallel to the longitudinal axis of the inner cylinder 41 and circumferentially distributed relative to the longitudinal axis of the inner cylinder 41. The annular heating band 47 is disposed in a second region, and the axis of the annular heating band is parallel to the longitudinal axis of the inner cylinder 41. End insulation material 48 is disposed on the outside of the annular heating band 47, with two axially installed. The end insulation material 48 is vertically located at both ends of the inner cylinder and tightly fitted to the inner cylinder end caps, and can be connected together by a mechanical device. The end insulation material 48 can be composed of one or more layers of insulation material or radiant heat shield, with each layer optimized to achieve the optimal insulation thickness under the desired temperature resistance. The annular heating strip 47 is located between the end insulation material 48 and the heating strip, with a certain gap between them. This gap can be determined based on the simulation calculation results. Furthermore, in the figure, the heating strip is arranged in a single row, but it can also be arranged in multiple rows.

[0098] The multiple heating strips and annular heating band can be fixed inside the inner cylinder 41 in various ways and rotate together with the inner cylinder 41. For example, the multiple heating strips can be fixed on the inner circumferential surface of the inner cylinder 41, or the annular heating band can be fixed on the inner circumferential surface of the inner cylinder 41, or fixed on both ends of the inner cylinder 41 along the longitudinal axis, or fixed on the end insulation material 48. The design of the annular heating band is also to ensure the temperature uniformity of the reaction chamber, so that the temperature field difference between the two ends and the middle position of the inner cylinder is small, ensuring that the deposition of epitaxial wafers at both ends also has high quality.

[0099] exist Figures 19-20 In this embodiment, the form, combination, and position of the heating elements are the same as in the previous embodiment, including multiple heating bars and annular heating bands, but their support and fixing methods are different. A central support shaft 55 passes through the center of the inner cylinder 41 and extends from both ends of the inner cylinder 41 along its longitudinal axis. The central support shaft 55 is configured to be fixed relative to the reaction chamber shell, allowing the inner cylinder 41 to rotate relative to the central support shaft 55. For example, the central support shaft 55 is directly fixed to the outer shell of the reaction chamber shell, or the central support shaft 55 is supported at the center of the rotating shaft 15 by bearings, allowing the rotating shaft 15 to rotate around the central support shaft 55. The multiple heating bars and annular heating bands are fixed by the central support shaft 55, ensuring that the multiple heating bars and annular heating bands do not rotate with the inner cylinder 41 during the operation of the MOCVD equipment.

[0100] A plurality of central support rings 49 are provided on the central support shaft 55. Each central support ring 49 is provided with a plurality of heating element support rods 46 extending radially along the central support ring 49. The plurality of heating element support rods 46 are evenly distributed circumferentially along the central support ring 49. The plurality of heating strips and annular heating bands are respectively directly or indirectly fixed to the ends of the heating element support rods 46 away from the central support ring 49. A fixing plate is provided on the ends of the heating element support rods 46 away from the central support ring 49. The heating strips or annular heating bands are fixed to the fixing plate by screws. The fixing plate and screws constitute a fixing assembly 50. An insulating sheet 56 is provided between the ends of the heating strips and the heating element support rods 46 (fixing assembly 50), and an insulating sheet 56 is also provided between the annular heating bands and the ends of the heating element support rods 46. The material of the central support rings 49 can be stainless steel or other nickel-based metals.

[0101] exist Figure 22 In the embodiments, with Figure 17 Unlike the illustrated embodiment, the heating elements inside the inner cylinder 41 are all composed of annular heating bands, with a certain distance between adjacent annular heating bands. The size and heating power of the annular heating bands can be adjusted according to process requirements. The annular heating bands can be partitioned according to the temperature uniformity of the inner cylinder, and can be divided into a middle zone and an edge zone in the axial direction. Since the heat loss is different between the edge and the middle, different power can be applied to each zone. By partitioning the axial direction, the surface temperature of the inner cylinder is made more uniform, and the temperature difference between the substrate surface at both ends and in the middle is less than 1°C.

[0102] Furthermore, the heating strips can also be designed in circumferential zones, allowing for independent adjustment of the electric heating power of different zones. For example, at the air inlet, due to the lower air temperature, the temperature field in this area differs significantly from that in the center of the reaction chamber. In this case, the electric heating power of the heating strip in this zone can be increased independently to ensure the uniformity of the temperature field throughout the entire reaction chamber.

[0103] Furthermore, if the inner cylinder 41 is penetrated by the rotating shaft 15 and the inner cylinder 41 is fixed relative to the rotating shaft 15 so that the inner cylinder 41 and the rotating shaft 15 can rotate together, multiple heating strips and / or annular heating bands can also be directly fixed on the rotating shaft 15.

[0104] like Figure 21As shown, a water-cooling channel is provided inside the rotating shaft 15. The water-cooling channel is a double-layer water-cooling channel, including an outer channel 67 and an inner channel 68 that are connected. The outer channel 67 coaxially surrounds the outer periphery of the inner channel 68. The outer channel 67 is used for water supply, and the inner channel 68 is used for drainage. The rotating shaft 15 is a hollow rotating shaft, and the double-layer water-cooling channel exists in the form of double-layer water-cooling pipes 66, which are arranged inside the hollow portion of the rotating shaft 15.

[0105] like Figure 22 As shown, the cavity wall of the reaction chamber shell also includes a support cylinder 57, which is disposed between the outer shell and the outer cylinder 44; a plurality of support rods 58 are disposed between the support cylinder 57 and the outer cylinder 44, the support rods 58 extend radially along the reaction chamber shell, and the plurality of support rods 58 are evenly distributed circumferentially along the reaction chamber shell.

[0106] like Figure 23 As shown, the heating element of the MOCVD equipment is electrically heated and connected to an external power source. When the inner cylinder 41 rotates, the power supply of the first heating element 43, which is fixedly mounted on the inner cylinder 41, is achieved as follows: a collector ring 69 is provided at the end of the rotating shaft 15. The collector ring 69 is connected to an external power source through a wire 70. The first heating element 43 is connected to the collector ring 69 through a wire passing through the center of the rotating shaft 15, thereby realizing the conversion between dynamic and static states.

[0107] The depressurization chamber in this invention is a crucial component for controlling the pressure environment required for epitaxial processes, ensuring that the chemical reactions occurring within the reaction chamber are within an ideal pressure range. The advantages of this design are twofold: First, during operation, only continuous evacuation from the external depressurization chamber is needed to effectively maintain a low-pressure environment; there are no reactive gases inside the depressurization chamber, eliminating waste. The reaction chamber shell, through the first and second shells, forms a small sealed environment. Normal process flow can easily maintain a slightly positive pressure environment, eliminating the need for continuous gas extraction from the reaction chamber shell. Therefore, less reactive gas is wasted, reducing the operating costs of the MOCVD equipment. Second, the slightly positive pressure environment of the reaction chamber shell prevents any external gases from entering, creating the cleanest possible space for the epitaxial deposition process within the reaction chamber shell. This significantly reduces the risk of contamination of the epitaxial quality, resulting in higher-quality epitaxial deposition.

[0108] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that variations may be made to these embodiments without departing from the principles and spirit of the invention. The scope of the invention is defined by the appended claims and their equivalents.

Claims

1. An improved sealing MOCVD apparatus, characterized in that, The MOCVD equipment includes: The reaction chamber shell is used to provide an environment for the reaction gases to undergo chemical reactions; The inlet and outlet are used to supply reactant gases into and out of the reaction chamber, respectively; and An inner cylinder (41) is disposed inside the reaction chamber shell, and a reaction gas channel (51) is formed between the inner cylinder (41) and the reaction chamber shell. The MOCVD equipment is configured such that the inner cylinder (41) and the reaction chamber shell can rotate relative to each other; An air intake element (52) is provided on the air intake port, and an exhaust element (53) is provided on the exhaust port. A separation element (54) is also provided on the reaction chamber shell. The separation element (54) is located in the reaction gas channel (51) and between the air intake element (52) and the exhaust element (53). The intake element (52) and the exhaust element (53) are arranged adjacent to each other in the circumferential direction of the reaction chamber shell; There is a gap between the partition element (54) and the inner cylinder (41). Air holes are provided on both sides of the partition element (54). Carrier gas is injected into the air holes to form a gas barrier layer. The portion of the air intake element (52) extending into the reaction gas channel (51) includes a radial section and a bent section that bends relative to the radial section; the bent section is provided with a first air outlet and a second air outlet, the flow direction of the reaction gas supplied from the first air outlet is approximately tangent to a circle centered on a point on the longitudinal axis of the inner cylinder (41), and the flow direction of the reaction gas supplied from the second air outlet is approximately directed toward the longitudinal axis of the inner cylinder (41) to form an air curtain; The reaction chamber shell includes a first shell (31) and a second shell (32), and a sealing assembly is provided between the first shell (31) and the second shell (32).

2. The improved sealing MOCVD equipment according to claim 1, characterized in that: The first housing (31) is provided with at least two first housing connecting elements (102), and the second housing (32) is provided with at least two second housing connecting elements (103). The first housing connecting elements (102) are configured to be connected with the second housing connecting elements (103).

3. The improved sealing MOCVD equipment according to claim 2, characterized in that: The first housing connecting element (102) is provided with a first labyrinth sealing element (104), and the second housing connecting element (103) is provided with a second labyrinth sealing element (105); The first labyrinth sealing element (104) and the second labyrinth sealing element (105) cooperate with each other.

4. The improved sealing MOCVD equipment according to claim 3, characterized in that: A sealing ring (106) is also provided between the first housing connecting element (102) and the second housing connecting element (103).

5. The improved sealing MOCVD equipment according to claim 3, characterized in that: A water-cooling tank (107) is provided in the first housing connecting element (102) and / or the second housing connecting element (103).

6. The improved sealing MOCVD equipment according to claim 2, characterized in that: A first outer cylinder is provided on the side of the first housing (31) facing the second housing (32), and a heat insulation material is provided between the first housing (31) and the first outer cylinder; a second outer cylinder is provided on the side of the second housing (32) facing the first housing (31), and a heat insulation material is provided between the second housing (32) and the second outer cylinder. With the first shell (31) and the second shell (32) joined together, the first outer cylinder and the second outer cylinder form the outer cylinder (44).

7. The improved sealing MOCVD apparatus according to claim 6, characterized in that: The first housing connecting element (102) is simultaneously fixed to the first housing (31) and the first outer cylinder; A first L-shaped element (108) and a second L-shaped element (109) are provided between the first housing (31) and the first outer cylinder, and the first L-shaped element (108) and the second L-shaped element (109) are connected and fixed to each other; The first L-shaped element (108) is fixedly connected to the first outer cylinder, and the second L-shaped element (109) is fixedly connected to the first housing connecting element (102).

8. The improved sealing MOCVD apparatus according to claim 6, characterized in that: The second housing connecting element (103) is simultaneously fixed to the second housing (32) and the second outer cylinder; A first L-shaped element (108) and a second L-shaped element (109) are provided between the second housing (32) and the second outer cylinder, and the first L-shaped element (108) and the second L-shaped element (109) are connected and fixed to each other; The first L-shaped element (108) is fixedly connected to the second outer cylinder, and the second L-shaped element (109) is fixedly connected to the second housing connecting element (103).

9. The improved sealing MOCVD apparatus according to claim 7 or 8, characterized in that: The first L-shaped element (108) and / or the second L-shaped element (109) are provided with reinforcing ribs (110).

10. The improved sealing MOCVD apparatus according to claim 1, characterized in that: The MOCVD equipment also includes a decompression chamber (61) configured to provide an environment below atmospheric pressure, and the reaction chamber shell is disposed inside the decompression chamber (61). The decompression chamber (61) includes a first chamber (99) and a second chamber (100). An inflatable sealing bladder (93) is provided at the junction between the first chamber (99) and the second chamber (100). The inflatable sealing bladder (93) is connected to an air pump (94) through a gas pipeline (95).

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