Horizontal internal rotation type MOCVD apparatus

Abstract

The application provides a horizontal inner rotary MOCVD device, which comprises a reaction cavity shell for providing an environment for chemical reaction of reaction gas, a gas inlet and a gas outlet for supplying reaction gas into the reaction cavity shell and discharging gas from the reaction cavity shell respectively, and a rotary inner cylinder (41) arranged in the reaction cavity shell and forming a reaction gas channel (51) with the reaction cavity shell, wherein the reaction cavity shell and the inner cylinder (41) are both substantially cylindrical, the longitudinal axis of the inner cylinder (41) is arranged in a horizontal direction, and the longitudinal axis of the reaction cavity shell is arranged in a horizontal direction; and wherein the inner cylinder (41) is configured to be rotatable around the longitudinal axis of the inner cylinder (41). The horizontal inner rotary MOCVD device has improved temperature uniformity, gas flow uniformity and / or gas concentration uniformity, can improve the deposition quality of semiconductor devices, and can increase the production capacity.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor technology, in particular to the technology of semiconductor epitaxial film vapor deposition, and more particularly to a horizontal internal rotation type MOCVD (Metal Organic Chemical Vapor Deposition) equipment. BACKGROUND

[0002] MOCVD (Metal Organic Chemical Vapor Deposition) is a key equipment for manufacturing semiconductor epitaxial wafers, and the performance and capacity of the epitaxial wafers are one of the key determinants of the performance and yield of semiconductor chips. The advantage of using MOCVD technology to prepare epitaxial films is that the composition and flow of reactants can be accurately controlled, the thickness of the film can be accurately controlled, and a relatively large area of uniform film can be prepared more easily, which is suitable for industrial production.

[0003] The commonly used MOCVD reaction chambers on the market at present mainly include planetary reaction chambers, vertical near-coupling spray reaction chambers, and vertical high-speed rotating disc type reaction chambers. The characteristics of these types of MOCVD reaction chambers are that the substrates to be deposited are horizontally placed on a horizontal disc, and the reaction gas enters the reaction chamber to deposit on the horizontally placed substrates to obtain the product. Taking the German AIXTRON planetary reaction chamber as an example, a graphite susceptor capable of rotating is arranged in the reaction chamber, the graphite susceptor is in the form of a disc, a plurality of substrates form a group, and a plurality of substrate groups are circumferentially and uniformly arranged on the graphite susceptor. The graphite susceptor can revolve, and each substrate group can rotate. Group III and group V reactants enter from the center of the upper cover, flow horizontally to the outer edge along the annular space between the graphite susceptor and the ceiling in a radial manner through the grid, and the uniform growth rate of each substrate surface is obtained by using rotation and revolution.

[0004] The currently commercialized MOCVD equipment has a small size and low capacity, and the capacity of a single reaction cavity of the MOCVD epitaxial equipment at home and abroad is about dozens of wafers, and there are very few above hundreds of wafers, which makes the cost of the MOCVD equipment and epitaxial wafers high, and the cost performance of the equipment is not high. In the MOCVD epitaxial growth process, when the radius of the susceptor increases, due to the increase of the area of the reaction chamber, the gas flow will become more complex, and an uneven flow pattern or a turbulent flow region may be formed. Uneven flow may lead to uneven distribution of gas composition, and further affect the normal growth rate and composition uniformity of the film.

[0005] Temperature uniformity is also crucial for the consistency of film growth. A larger disc-shaped susceptor will result in a larger temperature gradient and non-uniform distribution. The central part of the susceptor may have a higher temperature than the edge part, and the temperature non-uniformity may lead to non-uniformity of film deposition, making it difficult to control the quality of the epitaxial film.

[0006] Therefore, large-scale, high-capacity, high-quality MOCVD equipment is an important prerequisite for reducing the price of epitaxial production equipment, improving the quality of epitaxial wafers, and thus reducing the production cost of epitaxial wafers and solving the shortage of semiconductor chip production. SUMMARY

[0007] The present application aims to at least partially overcome the drawbacks of the prior art, and to provide a new type of MOCVD equipment. The purpose of the present application can be multiple, but is not intended to solve all problems and achieve all purposes, as long as one technical problem is solved, the purpose of the present application is achieved.

[0008] The present application also aims to provide a horizontal internal rotary MOCVD equipment with improved temperature uniformity, gas flow uniformity and / or gas concentration uniformity.

[0009] The present application also aims to provide a horizontal internal rotary MOCVD equipment that can improve the deposition quality of semiconductor devices.

[0010] The present application also aims to provide a horizontal internal rotary MOCVD equipment that can increase the capacity, or in other words, can easily increase the capacity while obtaining high-quality and high-performance deposition products.

[0011] To achieve the above-mentioned purpose or one of the purposes, the technical solution of the present application is as follows:

[0012] A horizontal internal rotary MOCVD equipment, the MOCVD equipment comprising:

[0013] A reaction cavity shell for providing an environment for chemical reaction of reaction gas;

[0014] A gas inlet and a gas outlet for supplying reaction gas into the reaction cavity shell and discharging gas from the reaction cavity shell, respectively; and

[0015] A rotary inner cylinder arranged in the reaction cavity shell, and a reaction gas passage is formed between the inner cylinder and the reaction cavity shell,

[0016] Wherein, the reaction cavity shell and the inner cylinder are both substantially cylindrical, the longitudinal axis of the inner cylinder is arranged in the horizontal direction, and the longitudinal axis of the reaction cavity shell is arranged in the horizontal direction; and

[0017] Wherein, the inner cylinder is configured to be able to rotate around the longitudinal axis of the inner cylinder.

[0018] According to one preferred embodiment of the present application, the MOCVD equipment further comprises an actuating device for driving the rotation of the inner cylinder;

[0019] The actuating device is in transmission connection with the inner cylinder through a magnetic coupling, or the actuating device is in transmission connection with the inner cylinder through a transmission shaft.

[0020] According to a preferred embodiment of the present application, the magnetic coupling comprises a driving rotary unit arranged outside the reaction cavity shell and a driven rotary unit arranged inside the reaction cavity shell, the driving rotary unit driving the driven rotary unit in a non-contact manner; the driving rotary unit is connected with the actuating device, and the driven rotary unit is connected with the inner cylinder.

[0021] According to a preferred embodiment of the present application, the outer periphery of the inner cylinder is provided with mounting positions for mounting substrates; and / or

[0022] The inner side of the reaction cavity shell is provided with mounting positions for mounting substrates.

[0023] According to a preferred embodiment of the present application, the center of the inner cylinder is penetrated by a rotating shaft, and the inner cylinder is relatively fixed with the rotating shaft so that the inner cylinder and the rotating shaft can rotate together; or

[0024] The rotating shaft is arranged on both ends of the inner cylinder along the longitudinal axis, the rotating shaft does not penetrate the center of the inner cylinder, and the inner cylinder is relatively fixed with the rotating shaft so that the inner cylinder and the rotating shaft can rotate together.

[0025] According to a preferred embodiment of the present application, the MOCVD device further comprises a heating element, which is arranged in the inner cylinder and / or the cavity wall of the reaction cavity shell.

[0026] According to a preferred embodiment of the present application, the heating element comprises:

[0027] A plurality of heating strips arranged in parallel, each of which is parallel to the longitudinal axis of the inner cylinder and distributed circumferentially relative to the longitudinal axis of the inner cylinder; or

[0028] A plurality of annular heating bands arranged in parallel, each of which is distributed axially relative to the longitudinal axis of the inner cylinder; or

[0029] A plurality of heating blocks, which are uniformly distributed on a selected circumferential surface around the longitudinal axis of the inner cylinder; or

[0030] A combination of any two of the plurality of heating strips, the plurality of annular heating bands and the plurality of heating blocks.

[0031] According to a preferred embodiment of the present application, the cavity wall of the reaction cavity shell comprises:

[0032] An outer shell;

[0033] An outer cylinder arranged in the outer shell and fixed relative to the outer shell; and

[0034] Thermal insulation material is arranged between the outer shell and the outer cylinder.

[0035] According to a preferred embodiment of the present application, the inner cylinder is a hollow inner cylinder, the center of the inner cylinder is penetrated by the rotating shaft, and thermal insulation material is arranged between the outer wall of the inner cylinder and the rotating shaft.

[0036] According to a preferred embodiment of the present application, the reaction cavity shell is provided with a gas inlet element, a gas outlet element and a partition element; the gas inlet element and the gas outlet element extend into the reaction gas passage through the cavity wall of the reaction cavity shell; the partition element is located in the reaction gas passage between the gas inlet element and the gas outlet element.

[0037] According to the horizontal inner-rotating MOCVD device of the present application, the inner cylinder is arranged in the reaction cavity shell, and the reaction gas passage is formed between the inner cylinder and the reaction cavity shell. Based on the shape of the inner wall surface of the inner cylinder and the reaction cavity shell, the reaction gas passage with a constant cross section is easily obtained. Therefore, the reaction gas supplied into the reaction gas passage through the gas inlet port can maintain a uniform velocity field and concentration field, and the rotation of the inner cylinder can make the concentration of the reaction gas contacted by the substrate more uniform. In addition, the layout of the heating element in the cavity wall of the inner cylinder or the reaction cavity shell is also easy to obtain a uniform temperature field. Therefore, the horizontal inner-rotating MOCVD device of the present application has improved temperature uniformity, gas flow uniformity and / or gas concentration uniformity, thereby improving the deposition quality of the semiconductor device. More importantly, the inner cylinder and the reaction cavity shell are coaxially arranged, and the capacity can be easily increased by increasing the axial and radial dimensions of the device (the area that can carry the substrate is increased), and the increase in the size of the device has little effect on the uniformity of the velocity field, concentration field and temperature field of the gas in the reaction cavity shell. It can well solve the problem that the large-scale production of epitaxial devices in the current semiconductor industry is limited. Therefore, the horizontal inner-rotating MOCVD device of the present application can increase the capacity, and at the same time ensure the high quality and high performance of the deposition product.

[0038] The main advantage of the horizontal inner-rotating MOCVD device of the present application is that it can provide a super-large and scalable reaction cavity shell, which can be easily expanded in size according to the capacity demand, to meet the problem of insufficient capacity of thin film deposition equipment in the current semiconductor industry. The advantage of the rotating reaction cavity shell structure is that the reaction gas passage with an annular cross section always has a constant cross-sectional area along the flow direction, thereby ensuring the uniformity of the gas velocity field. At the same time, the rotating design of the inner cylinder carrying the substrate can ensure the uniformity of the substrate surface temperature and the uniformity of the reactants on the substrate surface, solving the problem of uneven deposition on the substrate surface after the base of the MOCVD device becomes larger. BRIEF DESCRIPTION OF DRAWINGS

[0039] Figure 1 A cross-sectional view of a prior art planetary reaction chamber;

[0040] Figure 2 Fig. 2 is a top view of a graphite susceptor of the planetary reactor in Fig. 1 ; Figure 1

[0041] Figure 3 Fig. 4 is a cross-sectional view of a MOCVD apparatus according to an embodiment of the present application;

[0042] Figure 4 Fig. 5 is an A-A cross-sectional view of the MOCVD apparatus in Fig. 4; Figure 3

[0043] Fig. 6 shows a MOCVD apparatus according to another embodiment of the present application, corresponding to Fig. 4; Figure 5 Figure 4

[0044] Figure 6 Fig. 7 is a cross-sectional view of a MOCVD apparatus according to an embodiment of the present application, wherein the substrates are mounted on the outer periphery of the inner cylinder;

[0045] Figure 7 Fig. 8 is a C-C cross-sectional view of the MOCVD apparatus in Fig. 7; Figure 6

[0046] Figure 8 Fig. 9 is a cross-sectional view of a MOCVD apparatus according to an embodiment of the present application, wherein the substrates are mounted on both the outer periphery of the inner cylinder and the inner side of the reactor cavity shell;

[0047] Figure 9 Fig. 10 is a D-D cross-sectional view of the MOCVD apparatus in Fig. 9; Figure 8

[0048] Fig. 11 shows a MOCVD apparatus according to another embodiment of the present application, corresponding to Fig. 9, but with a different arrangement of the second heating element; Figure 10 Figure 9

[0049] Figure 11 Fig. 12 is a cross-sectional view of a MOCVD apparatus according to an embodiment of the present application, wherein the substrates are mounted on the inner side of the reactor cavity shell;

[0050] Figure 12 Fig. 13 is an E-E cross-sectional view of the MOCVD apparatus in Fig. 12; Figure 11

[0051] Fig. 14 shows an arrangement of mounting positions on the outer cylinder for mounting substrates; Figure 13

[0052] Fig. 15 shows a fixing means on the inner cylinder for fixing substrates; Figure 14

[0053] Figure 15 ​​​​​​​Fixing means of the fixing substrate on the inner cylinder and the outer cylinder are shown;

[0054] Figure 16 Fixing means of the fixing substrate on the outer cylinder are shown;

[0055] Figure 17 A cross-sectional view of a MOCVD apparatus according to an embodiment of the present application;

[0056] Figure 18 A cross-sectional view of a MOCVD apparatus according to an embodiment of the present application;

[0057] Figure 19 A G-G cross-sectional view of a MOCVD apparatus in Figure 18

[0058] Figure 20 A cross-sectional view of a MOCVD apparatus according to an embodiment of the present application;

[0059] Figure 21 A H-H cross-sectional view of a MOCVD apparatus in Figure 20

[0060] A cross-sectional view of a rotating shaft of a MOCVD apparatus according to an embodiment of the present application; Figure 22

[0061] A cross-sectional view of a MOCVD apparatus according to an embodiment of the present application; Figure 23

[0062] A cross-sectional view of a MOCVD apparatus according to an embodiment of the present application; Figure 24

[0063] A cross-sectional view of a MOCVD apparatus according to an embodiment of the present application. Figure 25 A list of reference numerals:

[0064]

[0065] ​​11 actuating device; 12 transmission shaft; 13 driving rotary unit; 14 driven rotary unit; 15 rotating shaft; 16 bearing; 17 support element; 31 first housing; 32 second housing; 41 inner cylinder; 42 first heat insulation material; 43 first heating element; 44 outer cylinder; 45 second heat insulation material; 46 heating element support rod; 47 annular heating belt; 48 end heat insulation material; 49 center support ring; 50 fixing assembly; 51 reaction gas passage; 52 gas inlet element; 53 gas outlet element; 54 partition element; 55 center support shaft; 56 insulation sheet; 57 support cylinder; 58 support rod; 60 rotary seal; 61 decompression cabin; 62 first vacuum pump; 63 second vacuum pump; 64 fixing groove; 65 clamp; 66 double-layer water-cooled pipe; 67 outer passage; 68 inner passage; 69 current collector ring; 70 wire; 71 first mounting position; 72 substrate; 73 second heating element; 74 heating element fixing part; 75 second mounting position; 97 base; 98 support frame; 101 lifting assembly; 102 first housing connecting element; 103 second housing connecting element. DETAILED DESCRIPTION

[0066] Exemplary embodiments of the present application are described in detail below with reference to the attached drawings. The same or similar components have the same reference numbers and markings, and thus, their explanation will not be repeated. In the following detailed description of the embodiments, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, it will be apparent to one skilled in the art that the present application can be practiced without these specific details. In other instances, well-known structures and devices are shown in block diagram form, rather than in detail, in order to avoid obscuring the present application.

[0067] Figure 3 , 4 A basic structure of an MOCVD apparatus according to an embodiment of the present application is shown, which is a rotary MOCVD apparatus. The rotary MOCVD apparatus is so called because the inner cylinder and the reaction cavity housing can rotate relative to each other, as will be described later. As shown, the MOCVD apparatus mainly includes a reaction cavity housing, a gas inlet and a gas outlet, an inner cylinder 41, an actuating device 11, and a transmission mechanism. The reaction cavity housing is used to provide an environment for the reaction gas to chemically react, which is usually a high-temperature and low-pressure environment. The inner cylinder 41 is arranged in the reaction cavity housing, and a reaction gas passage 51 is formed between the inner cylinder 41 and the reaction cavity housing. As shown, the inner cylinder 41 is substantially cylindrical, and the inner wall surface of the reaction cavity housing is also substantially cylindrical. The inner cylinder 41 and the reaction cavity housing are coaxially arranged, so that the reaction gas passage 51 is substantially annular. In addition to the above-mentioned parts, a complete MOCVD apparatus also includes a gas delivery system, a base support, a tail gas treatment system, etc. Figures 3-4

[0068] ​The reaction chamber shell is hollow, allowing the inner cylinder 41 to be inserted inside. The reaction chamber shell is primarily composed of a cavity wall, which includes: an outer shell; an outer cylinder 44 disposed within the outer shell and fixed relative to it; and a second insulating material 45 disposed between the outer shell and the outer cylinder 44. The outer shell, as the outermost layer of the reaction chamber shell, includes a first shell 31 and a second shell 32. The first shell 31 and the second shell 32 can switch between a first state where they are joined together to seal the inner cylinder 41 and a second state where they are separated to expose the inner cylinder 41. The first shell 31 and the second shell 32 ensure the airtightness of the reaction chamber shell's interior from the external environment. Since the outer shell is divided into two parts, correspondingly, the outer cylinder 44 and the second insulating material 45 between the outer shell and the outer cylinder 44 should also be composed of two parts. Optionally, end caps are installed at both ends of the outer cylinder to form a cavity, ensuring the airtightness of the reaction chamber shell's interior.

[0069] The inner cylinder 41 or the reaction chamber shell, at least the portions facing each other, comprise graphite material, tungsten material, or molybdenum material with a SiC coating. To make the inner cylinder 41 and outer cylinder 44 resistant to high temperatures, they are typically graphite cylinders coated with SiC, but high-temperature resistant metal materials such as tungsten and molybdenum can also be used. The thickness of the coating can be determined based on the mechanical properties of the material.

[0070] An inlet and an outlet are disposed on the reaction chamber shell, used to supply reactant gas into the reaction chamber shell and to discharge gas from the reaction chamber shell, respectively. In this embodiment, an inlet element 52 is disposed on the inlet, and an outlet element 53 is disposed on the outlet. The inlet element 52 and the outlet element 53 extend from outside the reaction chamber shell through the cavity wall of the reaction chamber shell into the reactant gas channel 51. The inlet element 52 is configured to guide the reactant gas into the reactant gas channel 51 and flow along the reactant gas channel 51 to the outlet. Figure 4 As shown by the middle arrow, the waste gas after reaction in the reaction gas channel 51 is discharged from the exhaust element 53. In addition to the intake element 52 and the exhaust element 53, the reaction chamber shell is also provided with a partition element 54, which is located in the reaction gas channel 51, between the intake element 52 and the exhaust element 53, to prevent the exhaust gas from flowing back to the intake side.

[0071] like Figure 4 As shown, the intake element 52 and exhaust element 53 extend radially from the outside of the reaction chamber shell through the cavity wall of the reaction chamber shell into the reaction gas channel 51. The intake element 52 and exhaust element 53 are arranged adjacent to each other in the circumferential direction of the reaction chamber shell. The adjacent intake element 52, exhaust element 53, and the separating element 54 between the intake element 52 and exhaust element 53 in the circumferential direction of the reaction chamber shell form a set of ventilation elements. Figure 4In this embodiment, the MOCVD equipment includes only one set of ventilation elements (full-circuit flow). In this set of ventilation elements, the outlet of the inlet element 52 can be a longitudinally elongated outlet, i.e., there is only one inlet element and one outlet. The outlet is located within the reaction gas channel 51 and extends along the longitudinal axis of the inner cylinder 41, preferably extending along the entire longitudinal length of the inner cylinder 41 to ensure the uniformity of the reaction gas within the reaction gas channel 51. Alternatively, in this set of ventilation elements, there can be multiple inlet elements 52, with their outlets located within the reaction gas channel 51, and these multiple inlet elements 52 are evenly distributed along the longitudinal axis of the inner cylinder 41 to ensure the uniformity of the reaction gas within the reaction gas channel 51. The exhaust element 53 can have the same form and arrangement as the inlet element 52.

[0072] Depend on Figure 4 The illustrated embodiment can be used to derive a ventilation element arrangement. Similarly, adjacent inlet elements 52, exhaust elements 53, and the separating element 54 between inlet elements 52 and exhaust elements 53 in the circumferential direction of the reaction chamber shell form a group of ventilation elements. The MOCVD equipment includes multiple groups of ventilation elements, such as two or three groups, which are evenly distributed in the circumferential direction of the reaction chamber shell. In the case of three groups, the three groups of ventilation elements are arranged on the reaction chamber shell at 120-degree angle intervals. Then, the reaction gas entering from the inlet element 52 of the first group of ventilation elements flows through the reaction gas channel 51 at a 120-degree angle and is discharged from the exhaust element 53 of the second group of ventilation elements; the reaction gas entering from the inlet element 52 of the second group of ventilation elements flows through the reaction gas channel 51 at a 120-degree angle and is discharged from the exhaust element 53 of the third group of ventilation elements; and the reaction gas entering from the inlet element 52 of the third group of ventilation elements flows through the reaction gas channel 51 at a 120-degree angle and is discharged from the exhaust element 53 of the first group of ventilation elements.

[0073] Figure 5 An embodiment of another arrangement of the intake element 52 and the exhaust element 53 (half-circular flow) is given, as shown in the figure. The intake element 52 includes a first intake element and a second intake element. Figure 5 The left and right intake elements 52 are arranged in the middle, the first intake element and the second intake element are adjacent in the circumferential direction of the reaction chamber shell, and a separator element 54 is provided between the first intake element and the second intake element; the exhaust element 53 includes a first exhaust element and a second exhaust element. Figure 5The first and second exhaust elements are adjacent in the circumferential direction of the reaction chamber shell, and a partition element 54 is arranged between the first and second exhaust elements; the gas inlet element 52 and the exhaust element 53 are arranged substantially opposite in the radial direction of the reaction chamber shell. In this way, the reaction gas entering from the first gas inlet element is discharged from the first exhaust element after flowing through an angle of 180 degrees in the reaction gas passage 51, and the reaction gas entering from the second gas inlet element is discharged from the second exhaust element after flowing through an angle of 180 degrees in the reaction gas passage 51 in the opposite direction.

[0074] The position of the gas inlet element 52 can be designed at different positions according to the working environment and specific working conditions, and in actual use, it can be arranged at a position below the outer shell of the reaction chamber shell, which is beneficial to inhibit the natural convection in the passage. The reaction gas enters the reaction gas passage through the gas inlet element, is heated and chemically reacts in the passage, and thin film deposition is carried out. Since the cross-sectional area of the passage during the flow process of the reaction gas remains unchanged, the flow uniformity of the gas is very good. It should be noted that since the inner cylinder and the reaction chamber shell can rotate relative to each other, in the case of rotation of the inner cylinder 41, the partition element 54 and the inner cylinder 41 should have a gap, which is a small gap, to prevent affecting the rotation of the inner cylinder. The partition element 54 can be a thin-walled baffle fixed on the outer cylinder, and the function of the partition element 54 is to prevent the mixing of the inlet and outlet gas. In a preferred embodiment, gas holes can be provided on both sides of the partition element 54, and a certain speed of carrier gas (nitrogen) is injected into the gas holes to form a gas barrier layer. On the one hand, the gas holes on the inlet side are used to block the flow of the inlet gas flow in the direction of the outlet gas flow, to avoid waste of organometallic sources; on the other hand, the gas holes on the outlet side are used to block the flow of the outlet gas flow in the direction of the inlet gas flow, to avoid contamination of the source gas.

[0075] Advantageously, the passage at the gas outlet of the gas inlet element 52 is curved relative to the axial direction of the gas inlet element 52, so that the flow direction of the reaction gas supplied from the gas outlet is substantially tangent to a circle with a point on the longitudinal axis of the inner cylinder 41 as the center, and in addition, the gas inlet element 52 is a gas inlet element with multiple passages, and the multiple passages exist in the form of a sleeve. The multiple passages are three passages or more, because there are multiple gases of the reaction gas, and each layer of the sleeve passes different gases.

[0076] Further, the portion of the gas inlet member 52 extending into the reaction gas passage 51 includes a radial section and a bent section bent with respect to the radial section; the bent section is provided with a first gas outlet and a second gas outlet, the flow direction of the reaction gas supplied from the first gas outlet is substantially tangential to a circle with a point on the longitudinal axis of the inner cylinder 41 as the center, and the flow direction of the reaction gas supplied from the second gas outlet is substantially directed to the longitudinal axis of the inner cylinder 41, so as to form a gas curtain. The gas curtain formed by the gas inlet side vertical downward nozzles (second gas outlet) prevents the exhaust gas from leaking into the gas inlet portion, and forms a gas curtain to block the exhaust gas from entering the gas inlet side through the gap of the partition member 54.

[0077] Advantageously, the MOCVD device is configured to enable relative rotation between the inner cylinder 41 and the reaction chamber shell. The relative rotation can be achieved in the following ways: the inner cylinder 41 is configured to be rotatable around the longitudinal axis of the inner cylinder 41, and the reaction chamber shell is configured to remain stationary during the operation of the MOCVD device; or at least a portion of the reaction chamber shell (the outer cylinder or the entire reaction chamber shell) is configured to be rotatable around the longitudinal axis of the reaction chamber shell, and the inner cylinder 41 is configured to remain stationary during the operation of the MOCVD device; or at least a portion of the reaction chamber shell (the outer cylinder or the entire reaction chamber shell) and the inner cylinder 41 are configured to be rotatable simultaneously, but the rotation direction or rotation speed of the inner cylinder 41 and the reaction chamber shell is different. In this way, the concentration of the carrier gas / reaction gas in contact with the wafer substrate is more uniform. Figure 3 In the illustrated embodiment, the inner cylinder 41 is actively rotatable, and the reaction chamber shell remains stationary.

[0078] It should be noted that the relative rotation of the inner cylinder 41 and the reaction chamber shell is not necessary, and both can remain relatively stationary, for example, they both remain absolutely stationary during the operation of the MOCVD device, which can also achieve the effect of the present application to some extent, as long as the reaction gas passage 51 has substantially the same cross section along the direction of travel of the reaction gas. In the case of an equal cross section of the reaction gas passage, the flow speed of the reaction gas in the passage remains substantially unchanged, thereby obtaining a uniform flow field along the flow direction. However, the relative rotation can make the concentration of the carrier gas / reaction gas in contact with the wafer substrate more uniform.

[0079] To achieve the working temperature of the MOCVD, the MOCVD device further includes a heating element, which can be arranged in the interior of the inner cylinder 41 and / or in the cavity wall of the reaction chamber shell. In general, the heating element can include: a plurality of heating strips arranged in parallel, each of which is parallel to the longitudinal axis of the inner cylinder 41 and distributed circumferentially with respect to the longitudinal axis of the inner cylinder 41, as shown in Figures 3-4 or a plurality of annular heating bands arranged in parallel, which are distributed axially with respect to the longitudinal axis of the inner cylinder 41, as shown in Figure 23or a plurality of heating blocks, which are uniformly distributed on a selected circumferential surface around the longitudinal axis of the inner cylinder 41, not shown in the figure, or a combination of any two of the plurality of heating strips, the plurality of annular heating bands and the plurality of heating blocks, such as Figures 18-21 The heating element can be a silicon-molybdenum rod, a tungsten wire or a molybdenum wire, and the material can be silicon-molybdenum, tungsten or molybdenum. The shape can be a block, a band or a strip, etc. The heating power can be uniform or non-uniform. The size of the heating element is designed according to the gas temperature in the reaction gas passage. The heating power can be adjusted to ensure that the temperature difference on the substrate surface is less than 1℃.

[0080] Since the reaction chamber shell and the inner cylinder 41 are both substantially cylindrical, the heating element is substantially uniformly arranged in the inner cylinder 41 and / or the cavity wall of the reaction chamber shell, so that the heat generated by the heating element is transmitted to the reaction gas passage 51 along the radial direction of the reaction chamber shell or the inner cylinder 41. The heating element is preferably a silicon-molybdenum rod, a tungsten wire or a molybdenum wire.

[0081] Thermal insulation materials are arranged in the inner cylinder 41 and the cavity wall of the reaction chamber shell, such as Figures 3-4 The center of the inner cylinder 41 is penetrated by the rotating shaft 15, and the inner cylinder 41 is relatively fixed with the rotating shaft 15 so that the inner cylinder 41 can rotate together with the rotating shaft 15. Thermal insulation materials are arranged between the outer wall of the inner cylinder 41 and the rotating shaft 15. The inner cylinder 41 is connected and fixed with the first heating element 41, the first thermal insulation material 42 and the rotating shaft 15 into a whole through the support element 17. The support element 17 should be made of a material with good rigidity and small thermal conductivity, such as a high-temperature-resistant ceramic material that does not decompose, such as zirconia. The first heating element 41 and the first thermal insulation material 42 are combined by mechanical connection, and are connected and fixed together with the high-temperature-resistant rotating inner cylinder through the support element 17. The other side of the support element 17 is mechanically connected and fixed with the rigid rotating shaft 15. The rotating shaft 15 is provided with bearings 16, which support and fix the entire inner cylinder 41. The rotating shaft 15 can be made of stainless steel or other materials, and a cooling structure is arranged inside the rotating shaft 15 to cool the rigid rotating shaft efficiently by liquid cooling or gas cooling, etc.

[0082] With reference to the embodiment of Figures 3-7 , it can be seen that the inner cylinder 41 is a hollow inner cylinder, and the heating element is arranged in the interior of the inner cylinder 41. The heating element includes a plurality of heating strips arranged in parallel, which are parallel to the longitudinal axis of the inner cylinder 41 and distributed circumferentially with respect to the longitudinal axis of the inner cylinder 41. The two ends of each heating strip are fixed on the two ends of the inner cylinder 41 along the longitudinal axis. In Figures 8-12In one embodiment, a heating element is also disposed in the cavity wall of the reaction chamber shell. The heating element is a second heating element 73. The second heating element 73 also includes a plurality of heating strips arranged in parallel. The plurality of heating strips are parallel to the longitudinal axis of the reaction chamber shell and distributed circumferentially relative to the longitudinal axis of the reaction chamber shell. Each heating strip is fixed in the cavity wall of the reaction chamber shell by a heating element fixing part 74.

[0083] The heating strips in this invention can be designed in series and parallel combinations according to process requirements. This design has two advantages: first, it can minimize energy consumption by selecting the series and parallel connection scheme with the lowest energy consumption for each working condition; second, different locations within the inner cylinder have different requirements for temperature field uniformity, and this design allows for targeted adjustment of the electric heating power. The heating element of this invention is located inside the inner cylinder supporting the substrate, providing uniform heating. Simultaneously, the double thermal insulation structure on both the inner and outer cylinders ensures that the heat from the heating element is almost entirely prevented from dissipating to the external environment, minimizing energy loss. Compared to traditional MOCVD equipment, energy consumption is reduced by at least an order of magnitude, significantly reducing equipment operating costs and substrate epitaxial deposition costs from an operational perspective.

[0084] The transmission mechanism is described below. The actuator 11 drives the inner cylinder 41 to rotate. The transmission mechanism can be a simple drive shaft or a magnetic coupler. Thus, the actuator 11 is connected to the inner cylinder 41 via the magnetic coupler. Figure 3 As shown, or the actuating device 11 is connected to the inner cylinder 41 via a drive shaft 12, such as... Figure 23 As shown, the drive shaft 12 is connected to the rotating shaft 15, and a rotating seal 60 is provided at the portion of the drive shaft 12 that passes through the reaction chamber shell. The transmission mechanism may also have other structures. The magnetic coupler includes an active rotating unit 13 disposed outside the reaction chamber shell and a driven rotating unit 14 disposed inside the reaction chamber shell. The active rotating unit 13 drives the driven rotating unit 14 in a non-contact manner. The active rotating unit 13 is connected to the actuating device 11, and the driven rotating unit 14 is connected to the inner cylinder 41.

[0085] like Figure 6 , 7 As shown, a first mounting position 71 for mounting the substrate 72 is provided on the outer periphery of the inner cylinder 41, such as... Figure 11 , 12 As shown, a second mounting position 75 for mounting the substrate 72 is provided on the inner side (outer cylinder 44) of the reaction chamber shell. Specifically, the mounting position is provided on the surface of the outer cylinder 44 facing the inner cylinder 41, as shown in the figure. Figures 8-10As shown, the outer periphery of the inner cylinder 41 is provided with a first mounting position 71 for mounting the substrate 72, and the inner side of the reaction cavity shell (the outer cylinder 44) is provided with a second mounting position 75 for mounting the substrate 72.

[0086] The number of mounting positions on the inner cylinder 41 or the reaction cavity shell is multiple, and the multiple mounting positions are uniformly distributed. Specifically, the multiple mounting positions can be arranged in a matrix type, as shown in Figure 13 As shown, or the multiple mounting positions form multiple rows, and the mounting positions of adjacent rows are arranged staggered with each other. Each mounting position can be a fixed groove 64 as shown, which can play a fixing role to keep the substrate fixed during rotation of the inner cylinder around the axis. Figure 13 As shown, or the multiple mounting positions form multiple rows, and the mounting positions of adjacent rows are arranged staggered with each other. Each mounting position can be a fixed groove 64 as shown, which can play a fixing role to keep the substrate fixed during rotation of the inner cylinder around the axis. Figures 14-16 As shown, the cross section of the inner cylinder 41 perpendicular to the longitudinal axis of the inner cylinder 41 is a regular polygon, so that the inner cylinder 41 forms a polygonal prism, the cross section of the inner wall surface of the reaction cavity shell perpendicular to the longitudinal axis of the reaction cavity shell is a regular polygon, so that the inner wall surface of the reaction cavity shell forms a polygonal prism, and the mounting positions are arranged on the prism faces of the polygonal prism, and in addition, clamps 65, clamping grooves, or grooves are arranged on the mounting positions for fixing the substrate 72 on the mounting positions. The edge length of the polygon is determined by the size of the wafer substrate, and the number N of edges of the polygon can be any number greater than or equal to 3. Generally, in order to make the flow field uniform and the cross-sectional area of the annular reaction gas passage change not obviously, N can be slightly larger, and therefore the diameter of the high-temperature-resistant inner cylinder can also be relatively large.

[0087] The structure of mounting the substrate on both sides greatly improves the productivity of the MOCVD equipment, and the outer surface of the high-temperature-resistant inner cylinder and the inner surface of the high-temperature-resistant outer cylinder are designed to have grooves, clamping grooves, or clamps for placing the wafer substrate. Each wafer substrate on the outer surface of the inner cylinder can be opposite to the wafer substrate on the inner surface of the outer cylinder, and the cross section of the reaction gas passage formed between the two is also similar to a regular polygonal passage. When the gas passes through the annular or regular polygonal passage, the epitaxial film can be deposited on both sides, the loss of reaction gas is minimized, and the efficiency of epitaxial film growth is high. This method also solves the problem that the wall surface of the reaction cavity shell is easily deposited with chemical reactants and needs to be cleaned regularly.

[0088] In the case of the inner cylinder rotation, the inner cylinder is rotated at a uniform speed during the operation, which can ensure the uniformity of the temperature of the large-size cylinder wall, thereby realizing the uniformity of the deposition on the surface of the wafer substrate. In practice, the rotation speed of the inner cylinder can be adjusted as required, or the inner cylinder can be selected to be stationary without rotation. The annular reaction gas passage of the cylindrical reaction chamber has a constant cross-sectional area along the flow direction, thereby ensuring the uniformity of the gas velocity field. Meanwhile, the inner cylinder carrying the substrate is designed to rotate, which can ensure the uniformity of the temperature of the inner cylinder and the substrate surface, as well as the uniformity of the reactants on the substrate surface, thereby solving the problem of the non-uniform deposition on the substrate surface after the MOCVD equipment is enlarged. Meanwhile, the increase in the size of the reaction chamber shell along the axial direction has little effect on the temperature field, velocity field and reactant diffusion concentration field of the film deposition reaction gas of the MOCVD equipment, thereby greatly improving the productivity of the MOCVD wafer and ensuring a very high epitaxial deposition quality, and effectively breaking through the restriction of the production capacity of the MOCVD equipment in the semiconductor industry.

[0089] Preferably, the distribution density or power density of the heating element is greater at a position close to the gas inlet or gas outlet than at a position away from the gas inlet or gas outlet. Referring to Figure 9 、 10 The distribution density of the second heating element 73 is greater near the positions of the gas inlet and gas outlet (the gas inlet element 52 and the gas outlet element 53) than at other positions, because the temperature of the substrate 72 on the outer cylinder 44 near the gas inlet is low due to the low temperature of the gas inlet in some schemes, and therefore a special heating element needs to be arranged or increased near the gas inlet of the outer cylinder 44 to increase the local temperature of the outer cylinder and ensure the uniformity of the temperature in the 360° circumferential direction of the entire outer cylinder. Since the annular reaction gas passage is small, the overall temperature difference between the inner and outer cylinders is not large, and the outer cylinder heating element can be arranged or not arranged at other positions of the outer cylinder according to the temperature requirement, or only arranged at a local position (as shown in Figure 10 The inner and outer cylinders are heated by the heating element inside the inner cylinder, and only the heating element is arranged near the gas inlet of the outer cylinder for compensation, so that the temperature difference of the entire outer cylinder is within 1℃, which meets the temperature range required for high-quality film deposition of the substrate of the outer cylinder.

[0090] Even if the substrate is not provided on the outer cylinder 44, the outer cylinder 44 can be heated to compensate for the temperature reduction of the inner cylinder caused by the low-temperature reaction gas. The heating power of the heating element of the outer cylinder can be uniformly or non-uniformly distributed along the circumferential direction. The non-uniform distribution is generally used in the position where the temperature of the reaction gas inlet is low, and a larger compensation heating power or a more dense heating wire design is used. Along the movement direction of the reaction gas in the gas passage, the gas temperature gradually increases, and the compensation heating power of the heating element of the outer cylinder gradually decreases to ensure that the temperature of the entire substrate surface is more uniform, and to create a more uniform temperature environment for the reaction chamber. Another function of the auxiliary heating element of the outer cylinder is to accelerate the system response speed of MOCVD during temperature switching. According to the surface temperature of the inner cylinder and the temperature switching requirement, the power and switching of the auxiliary heating element are controlled in advance to ensure that the system realizes the temperature rising or falling process in a shorter time.

[0091] In Figure 17 , the first shell 31 is located vertically above the second shell 32, the second shell 32 remains fixed, and the first shell 31 is configured to be movable relative to the second shell 32; two first shell combination elements 102 are provided on the first shell 31, two second shell combination elements 103 are provided on the second shell 32, and the first shell combination elements 102 are configured to be combined with the second shell combination elements 103; the MOCVD device further comprises two lifting assemblies 101 connected with the first shell combination elements 102 for lifting or lowering the first shell 31. The lifting assembly 101 can be a hydraulic rod. During loading and unloading of the substrate, the lifting assembly 101 drives the first shell 31 to rise upward, thereby opening the reaction cavity shell and leaving space for loading / unloading the wafer substrate.

[0092] Figures 17-21 , 23 shows several different forms, arrangements and support methods of the heating element, which are several embodiments of the partitioned heating element. The interior of the inner cylinder 41 or the cavity wall of the reaction cavity shell is divided into different areas, and the heating element exists in at least two areas in different forms, different distribution densities or different power densities. Specifically, the distribution density or power density of the heating element at the position close to the gas inlet or gas outlet can be greater than the distribution density or power density at the position away from the gas inlet or gas outlet, or the heating element has different distribution densities or power densities at the position close to the end of the longitudinal axis of the inner cylinder 41 and the position close to the center of the longitudinal axis of the inner cylinder 41. For example, the heating element is arranged in the interior of the inner cylinder 41, and the interior of the inner cylinder 41 includes a first area close to the center of the longitudinal axis of the inner cylinder 41 and two second areas close to both ends of the longitudinal axis of the inner cylinder 41, and the heating element has different forms and arrangements in the first area and the second area.

[0093] In Figures 17-19 embodiments, the rotation shaft 15 is arranged on both ends of the inner cylinder 41 along the longitudinal axis, the rotation shaft 15 does not penetrate the center of the inner cylinder 41, and the inner cylinder 41 is fixed relative to the rotation shaft 15 so that the inner cylinder 41 can rotate together with the rotation shaft 15. The heating element is fixedly arranged inside the inner cylinder 41, and the heating element includes a first heating element 43 and an annular heating belt 47, the first heating element 43 is in a first region, which is designed as a plurality of heating strips arranged in parallel, and the plurality of heating strips are all parallel to the longitudinal axis of the inner cylinder 41 and distributed in a circumferential direction relative to the longitudinal axis of the inner cylinder 41, and the annular heating belt 47 is arranged in a second region, and the axis of the annular heating belt is parallel to the longitudinal axis of the inner cylinder 41. An end heat insulation material 48 is arranged outside the annular heating belt 47, and two are axially installed, the end heat insulation material 48 is vertically located at both ends of the inner cylinder and tightly fits with the end cover of the inner cylinder, and can be connected together through a mechanical device. The end heat insulation material 48 can be composed of one to multiple layers of heat insulation materials or radiation heat shields, and each layer has an optimal heat insulation thickness at a resistant temperature through optimized design. The annular heating belt 47 is located between the end heat insulation material 48 and the heating strips, and is spaced apart from both of them, and the spacing can be determined according to the simulation calculation result. In addition, in the figure, the heating strips are arranged in a single row, but they can also be arranged in multiple rows.

[0094] The plurality of heating strips and the annular heating belt can be fixed in various ways inside the inner cylinder 41 and rotate together with the inner cylinder 41, for example, the plurality of heating strips are fixed on the inner circumferential surface of the inner cylinder 41, or the annular heating belt is fixed on the inner circumferential surface of the inner cylinder 41 or fixed on both ends of the inner cylinder 41 along the longitudinal axis or fixed on the end heat insulation material 48. The design of the annular heating belt is also to ensure the temperature uniformity of the reaction chamber, so that the temperature field of the two ends of the inner cylinder and the middle position is small, and the deposition of the epitaxial wafer at the two end positions also has high quality.

[0095] In Figures 20-21 embodiments, the form, combination and position of the heating element are the same as those in the previous embodiments, including a plurality of heating strips and an annular heating belt, but their support and fixation modes are different. A central support shaft 55 penetrates the center of the inner cylinder 41 and extends from both ends of the inner cylinder 41 along the longitudinal axis, and the central support shaft 55 is configured to be fixed relative to the reaction cavity shell, so that the inner cylinder 41 can rotate relative to the central support shaft 55, for example, the central support shaft 55 is directly fixed on the outer shell of the reaction cavity shell, and the central support shaft 55 is supported on the center of the rotation shaft 15 through a bearing, so that the rotation shaft 15 can rotate around the central support shaft 55; the plurality of heating strips and the annular heating belt are fixed through the central support shaft 55, so that the plurality of heating strips and the annular heating belt do not rotate with the inner cylinder 41 during the operation of the MOCVD equipment.

[0096] The center support shaft 55 is provided with a plurality of center support rings 49, each of which is provided with a plurality of heating element support rods 46 extending in the radial direction of the center support ring 49, and the plurality of heating element support rods 46 are uniformly distributed in the circumferential direction of the center support ring 49; the plurality of heating strips and the annular heating bands are respectively fixed directly or indirectly on the ends of the heating element support rods 46 away from the center support ring 49. The ends of the heating element support rods 46 away from the center support ring 49 are provided with fixing plates, and the heating strips or annular heating bands are fixed on the fixing plates by screws, and the fixing plates and screws constitute a fixing assembly 50. Insulating sheets 56 are provided between the heating strips and the ends of the heating element support rods 46 (fixing assembly 50), and insulating sheets 56 are provided between the annular heating bands and the ends of the heating element support rods 46. The material of the center support ring 49 can be selected from stainless steel or other nickel-based metals.

[0097] In Figure 23 the embodiment, unlike the embodiment shown in Figure 18 , the heating elements in the inner cylinder 41 are all composed of annular heating bands, and a certain distance is left between adjacent two annular heating bands. The size and heating power of the annular heating bands can be adjusted according to process requirements. The annular heating bands can be designed in zones according to the temperature uniformity of the inner cylinder, and can be divided into middle zone and edge zone in the axial direction. Since the heat loss is different between the edge and the middle, different powers can be loaded in different zones, and through the axial different zones, the surface temperature of the inner cylinder is more uniform, and the surface temperature difference of the substrate at both ends and in the middle is less than 1℃.

[0098] Further, the heating strips can also be designed in zones in the circumferential direction. Such design can independently adjust the electric heating power of different zones. For example, for the position of the gas inlet, since the gas temperature is low, there is a large difference between the temperature field of this area and the temperature field of the middle position of the reaction chamber. At this time, the electric heating power of the heating strip in this zone can be independently adjusted to increase, so as to ensure the uniformity of the temperature field of the entire reaction chamber.

[0099] In addition, in the case where the center of the inner cylinder 41 is penetrated by the rotating shaft 15 and the inner cylinder 41 is relatively fixed with the rotating shaft 15 so that the inner cylinder 41 and the rotating shaft 15 can rotate together, the plurality of heating strips and / or annular heating bands can also be directly fixed on the rotating shaft 15.

[0100] As Figure 22As shown, the rotating shaft 15 is provided with a water cooling channel, which is a double-layer water cooling channel, including a communicating outer channel 67 and an inner channel 68, the outer channel 67 coaxially surrounds the outer periphery of the inner channel 68, the outer channel 67 is used for water supply, and the inner channel 68 is used for water drainage. Wherein, the rotating shaft 15 is a hollow rotating shaft, the double-layer water cooling channel exists in the form of a double-layer water cooling pipe 66, and the double-layer water cooling pipe 66 is arranged in the hollow part of the rotating shaft 15.

[0101] As shown in the figure, Figure 23 As shown, the cavity wall of the reaction cavity shell further includes a support cylinder 57 arranged between the outer shell and the outer cylinder 44; a plurality of support rods 58 are arranged between the support cylinder 57 and the outer cylinder 44, the support rods 58 extend along the radial direction of the reaction cavity shell, and the plurality of support rods 58 are uniformly distributed along the circumferential direction of the reaction cavity shell.

[0102] As shown in the figure, Figure 24 As shown in the figure, the heating element of the MOCVD equipment is an electric heating mode, the heating element is connected with an external power supply, when the inner cylinder 41 rotates, the power supply of the first heating element 43 fixedly arranged on the inner cylinder 41 is realized in the following mode: a current collector ring 69 is arranged at the end of the rotating shaft 15, the current collector ring 69 is connected with the external power supply through a wire 70, and the first heating element 43 is connected with the current collector ring 69 through a wire passing through the center of the rotating shaft 15, so as to realize the dynamic and static conversion.

[0103] In the above-described embodiments, the longitudinal axis of the inner cylinder 41 is arranged along the horizontal direction, and the longitudinal axis of the reaction cavity shell is also arranged along the horizontal direction, so as to form a horizontal MOCVD equipment, however, alternatively, the longitudinal axis of the inner cylinder 41 can also be arranged along the vertical direction, and the longitudinal axis of the reaction cavity shell can also be arranged along the vertical direction, so as to form a vertical MOCVD equipment, Figure 25 That is, the embodiment of the vertical MOCVD equipment, in which a decompression cabin 61 is also shown, the decompression cabin 61 is configured to be able to provide an environment lower than atmospheric pressure, the reaction cavity shell is arranged in the decompression cabin 61, in the working process of the MOCVD equipment, the first pressure in the reaction cavity shell is higher than the second pressure in the decompression cabin 61, and both the first pressure and the second pressure are lower than atmospheric pressure. The MOCVD equipment further includes a first vacuum pump 62 and a second vacuum pump 63, the first vacuum pump 62 is in fluid communication with the decompression cabin 61, and is used to generate and maintain the second pressure in the decompression cabin 61; the second vacuum pump 63 is in fluid communication with the reaction cavity formed by the reaction cavity shell, and is used to generate and maintain the first pressure in the reaction cavity. In addition, the decompression cabin 61 is fixed on the base 97, and the support frame 98 is arranged in the decompression cabin 61, the support frame 98 has a U-shaped groove, the reaction cavity shell is fixed on the support frame 98, and the actuating device 11 and the driving rotating unit 13 of the magnetic coupler are located in the U-shaped groove. In addition,Figure 25 Other settings of the vertical MOCVD apparatus of the present application are the same as the previous embodiments.

[0104] While embodiments of the present application have been shown and described, it is to be understood that the embodiments can be varied, without departing from the spirit and scope of the present application. The scope of the present application is limited by the claims appended hereto and their equivalents.

Claims

1. A horizontal internal rotary MOCVD device, characterized in that, The MOCVD equipment includes: The reaction chamber shell is used to provide an environment for the reaction gases to undergo chemical reactions; The inlet and outlet are used to supply reactant gases into and out of the reaction chamber, respectively; and A rotary inner cylinder (41) is disposed inside the reaction chamber shell, and a reaction gas channel (51) is formed between the inner cylinder (41) and the reaction chamber shell. The reaction chamber shell and the inner cylinder (41) are both approximately cylindrical, with the longitudinal axis of the inner cylinder (41) arranged horizontally, and the longitudinal axis of the reaction chamber shell is also arranged horizontally. The inner cylinder (41) is configured to rotate about the longitudinal axis of the inner cylinder (41); The reaction chamber shell is provided with an air inlet element (52), an air outlet element (53) and a partition element (54); the partition element (54) is located in the reaction gas channel (51) and between the air inlet element (52) and the air outlet element (53); The intake element (52) and the exhaust element (53) are arranged adjacent to each other in the circumferential direction of the reaction chamber shell; There is a gap between the partition element (54) and the inner cylinder (41). Air holes are provided on both sides of the partition element (54). Carrier gas is injected into the air holes to form a gas barrier layer. The portion of the air intake element (52) extending into the reaction gas channel (51) includes a radial section and a bent section that bends relative to the radial section; the bent section is provided with a first air outlet and a second air outlet, the flow direction of the reaction gas supplied from the first air outlet is approximately tangent to a circle centered on a point on the longitudinal axis of the inner cylinder (41), and the flow direction of the reaction gas supplied from the second air outlet is approximately directed towards the longitudinal axis of the inner cylinder (41) to form an air curtain.

2. The horizontal internal rotary MOCVD equipment according to claim 1, characterized in that: The MOCVD equipment also includes an actuator (11) for driving the inner cylinder (41) to rotate; The actuation device (11) is connected to the inner cylinder (41) via a magnetic coupler, or the actuation device (11) is connected to the inner cylinder (41) via a drive shaft (12).

3. The horizontal internal rotary MOCVD equipment according to claim 2, characterized in that: The magnetic coupler includes an active rotating unit (13) disposed outside the reaction chamber shell and a driven rotating unit (14) disposed inside the reaction chamber shell. The active rotating unit (13) drives the driven rotating unit (14) in a non-contact manner. The active rotating unit (13) is connected to the actuating device (11), and the driven rotating unit (14) is connected to the inner cylinder (41).

4. The horizontal internal rotary MOCVD equipment according to claim 1, characterized in that: The center of the inner cylinder (41) is penetrated by a rotating shaft (15), and the inner cylinder (41) and the rotating shaft (15) are relatively fixed so that the inner cylinder (41) and the rotating shaft (15) can rotate together; or The rotating shaft (15) is located at both ends of the inner cylinder (41) along the longitudinal axis. The rotating shaft (15) does not pass through the center of the inner cylinder (41), and the inner cylinder (41) and the rotating shaft (15) are relatively fixed so that the inner cylinder (41) and the rotating shaft (15) can rotate together.

5. The horizontal internal rotary MOCVD equipment according to claim 1, characterized in that: The MOCVD equipment also includes a heating element disposed inside the inner cylinder (41) and / or in the cavity wall of the reaction chamber shell.

6. The horizontal internal rotary MOCVD equipment according to claim 5, characterized in that, The heating element includes: Multiple heating bars arranged in parallel, each heating bar being parallel to the longitudinal axis of the inner cylinder (41) and distributed circumferentially relative to the longitudinal axis of the inner cylinder (41); or Multiple annular heating bands arranged in parallel, the multiple annular heating bands being axially distributed relative to the longitudinal axis of the inner cylinder (41); or Multiple heating blocks, the multiple heating blocks being evenly distributed on a selected circumferential surface surrounding the longitudinal axis of the inner cylinder (41); or Any combination of two of the following: multiple heating bars, multiple annular heating belts, and multiple heating blocks.

7. The horizontal internal rotary MOCVD equipment according to claim 1, characterized in that, The cavity wall of the reaction chamber shell includes: shell; The outer cylinder (44) is disposed inside the outer casing and fixed relative to the outer casing; and Thermal insulation material is placed between the outer shell and the outer cylinder (44).

8. The horizontal internal rotary MOCVD equipment according to claim 1, characterized in that: The inner cylinder (41) is a hollow inner cylinder, and the center of the inner cylinder (41) is penetrated by the rotating shaft (15), and heat insulation material is provided between the outer wall of the inner cylinder (41) and the rotating shaft (15).

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