Device and method for measuring package spurious parameters

Abstract

The present application relates to a device for measuring package spurious parameters, comprising: a signal generator for modulating the amplitude and frequency required for measurement; the signal generator having a first end and a second end opposite each other; a first resistor having one end connected to the first end of the signal generator; an equivalent filter having one end connected to the end of the first resistor remote from the signal generator and the other end connected to the second end of the signal generator; and an oscilloscope connected to the signal generator, the first resistor, and the equivalent filter, for obtaining the cutoff frequency of the equivalent filter and, based on the cutoff frequency, obtaining internal parasitic parameters. In the present application, package spurious parameters can be measured using only the signal generator and the oscilloscope, eliminating the need for an expensive LCR source meter. This device has the advantages of being inexpensive, easy to implement, and widely applicable.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a device and method for measuring package stray parameters. Background Art

[0002] The packaging process not only positions, secures, seals, and protects the chip during the manufacture of semiconductor integrated circuits, but also connects the chip's contacts to the package's pins with wires. These pins, in turn, connect to other components via wires on the printed circuit board. Therefore, packaging technology is a crucial step for many integrated circuit products.

[0003] However, the voltage spike problem caused by stray inductance is particularly prominent in packaging technology. The LCR source meter that directly tests stray inductance and parasitic capacitance is expensive and has poor versatility. This method cannot be used to directly measure package parasitic parameters in all cases. A more flexible and variable parasitic parameter testing method is needed. Therefore, a feasible method for evaluating package stray inductance is urgently needed to evaluate and improve packaging technology. Summary of the Invention

[0004] The purpose of this application is to provide a measurement device and method for package stray parameters, which solves the problem that LCR meters for directly testing stray inductance and parasitic capacitance are expensive and have poor versatility, and cannot be used to directly measure package parasitic parameters in all cases. This application realizes a more flexible and variable parasitic parameter testing method to evaluate and improve packaging technology.

[0005] To achieve the purpose of this application, the present application provides the following technical solutions: In a first aspect, the present application provides a device for measuring packaged stray parameters, the device comprising:

[0006] A signal generator for modulating the amplitude and frequency required for measurement; the signal generator has a first end and a second end opposite to each other;

[0007] a first resistor, one end of which is connected to the first end of the signal generator;

[0008] an equivalent filter, one end of which is connected to the end of the first resistor away from the signal generator, and the other end of which is connected to the second end of the signal generator;

[0009] An oscilloscope is connected to the signal generator, the first resistor, and the equivalent filter, and is used to obtain a cutoff frequency of the equivalent filter and obtain internal parasitic parameters based on the cutoff frequency.

[0010] In the package spurious parameter measurement device of the present application, the package spurious parameters can be measured using only a signal generator and an oscilloscope, without the need for an expensive LCR source meter. It has the advantages of low price, easy implementation and wide versatility.

[0011] In one embodiment, the equivalent filter includes:

[0012] a second resistor, one end of which is connected to an end of the first resistor away from the signal generator;

[0013] The structure to be measured has one end connected to the end of the second resistor away from the first resistor, and the other end connected to the second end of the signal generator.

[0014] In one embodiment, the resistance value of the structure to be measured is smaller than the resistance value of the second resistor.

[0015] In one embodiment, the oscilloscope is further used to obtain a first voltage waveform of the first voltage between the first end of the signal generator and the second end of the signal generator and a second voltage waveform of the second voltage of the equivalent filter, and perform FFT operation on the first voltage and the second voltage to obtain an amplitude-frequency characteristic curve of the first voltage waveform and an amplitude-frequency characteristic curve of the second voltage waveform; the oscilloscope obtains the cutoff frequency of the equivalent filter based on the amplitude-frequency characteristic curve of the first voltage waveform and the amplitude-frequency characteristic curve of the second voltage waveform.

[0016] In one embodiment, the oscilloscope includes a voltage differential probe, wherein one end of the positive clamping point of the voltage differential probe is connected between the first resistor and the signal generator, and the other end is connected between the signal generator and the structure to be measured; one end of the negative clamping point of the voltage differential probe is connected between the first resistor and the second resistor, and the other end is connected between the signal generator and the structure to be measured.

[0017] In a second aspect, the present application further provides a method for measuring package stray parameters, which is performed using the package stray parameter measurement device as described in any one of the above embodiments; the method for measuring package stray parameters includes:

[0018] Turn on the signal generator to modulate the amplitude and frequency required for measurement;

[0019] Obtaining the cutoff frequency of the equivalent filter through an oscilloscope;

[0020] The internal parasitic parameters are obtained based on the cutoff frequency through the oscilloscope.

[0021] In the package spurious parameter measurement method of the present application, the package spurious parameters can be measured using only a signal generator and an oscilloscope, without the need for an expensive LCR source meter. This method has the advantages of being low-cost, easy to implement, and widely applicable.

[0022] In one embodiment, obtaining the cutoff frequency of the equivalent filter through an oscilloscope includes:

[0023] Acquire a first voltage waveform of a first voltage between a first terminal of the signal generator and a second terminal of the signal generator and a second voltage waveform of a second voltage of the equivalent filter;

[0024] The oscilloscope performs an FFT operation on the first voltage and the second voltage to obtain an amplitude-frequency characteristic curve of the first voltage waveform and an amplitude-frequency characteristic curve of the second voltage waveform;

[0025] The oscilloscope obtains a cutoff frequency of the equivalent filter based on an amplitude-frequency characteristic curve of the first voltage waveform and an amplitude-frequency characteristic curve of the second voltage waveform.

[0026] In one embodiment, after obtaining a first voltage waveform of the first voltage between the first terminal of the signal generator and the second terminal of the signal generator and a second voltage waveform of the second voltage of the equivalent filter, the oscilloscope performs an FFT operation on the first voltage and the second voltage to obtain an amplitude-frequency characteristic curve of the first voltage waveform and the amplitude-frequency characteristic curve of the second voltage waveform, and before obtaining the first voltage waveform and the second voltage waveform, the method further includes:

[0027] comparing the first voltage and the second voltage to obtain a phase difference between the first voltage waveform and the second voltage waveform;

[0028] It is determined whether the structure to be measured presents inductive reactance or capacitive reactance at the frequency by using the phase difference.

[0029] In one embodiment, when the structure to be measured exhibits inductive reactance at the frequency, the internal parasitic parameter includes inductance; the internal parasitic parameter is calculated using the following formula:

[0030]

[0031] Where, represents the cutoff frequency, represents the resistance value of the second resistor, represents inductance;

[0032] When the structure to be measured exhibits capacitive reactance at the frequency, the internal parasitic parameters include capacitance; the internal parasitic parameters are calculated using the following formula:

[0033]

[0034] Where, represents the cutoff frequency, represents the second resistor, Indicates capacitance.

[0035] In one embodiment, the oscilloscope obtains the cutoff frequency of the equivalent filter based on the amplitude-frequency characteristic curve of the first voltage waveform and the amplitude-frequency characteristic curve of the second voltage waveform, including:

[0036] The oscilloscope compares the amplitude-frequency characteristic curve of the first voltage waveform and the amplitude-frequency characteristic curve of the second voltage waveform;

[0037] The frequency range in which the amplitude-frequency characteristic curve of the second voltage waveform is lower than the amplitude-frequency characteristic curve of the first voltage waveform by a preset decibel is the cut-off frequency of the equivalent filter. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the traditional technology, the following briefly introduces the drawings required for use in the embodiments or the description of the traditional technology. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0039] Figure 1 This is a schematic diagram of the circuit structure of a device for measuring package stray parameters provided in one embodiment;

[0040] Figure 2 is a flow chart of a method for measuring package spurious parameters provided in another embodiment;

[0041] Figure 3 is a flowchart of step S12 in a method for measuring package spurious parameters provided in another embodiment;

[0042] Figure 4 is a flow chart of steps S123 and S124 in a method for measuring package spurious parameters provided in another embodiment;

[0043] Figure 5 4 is a flowchart of step S125 in a method for measuring package spurious parameters provided in another embodiment.

[0044] Description of Reference Numerals

[0045] 10. Device for measuring package spurious parameters; 101. Signal generator. DETAILED DESCRIPTION

[0046] To facilitate understanding of the present application, a more comprehensive description of the present application will be provided below with reference to the accompanying drawings. The drawings illustrate preferred embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the present disclosure.

[0047] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0048] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or there can be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer, doping type or portion discussed below may be represented as a second element, component, region, layer or portion; for example, the first doping type may be referred to as the second doping type, and similarly, the second doping type may be referred to as the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.

[0049] Spatially relative terms such as "under," "beneath," "beneath," "under," "above," "above," etc., may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the drawings is turned over, the element or feature described as "under" or "beneath" or "beneath" the other elements will be oriented as "above" the other elements or features. Thus, the exemplary terms "under" and "under" can include both upper and lower orientations. In addition, the device can also include alternative orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0050] As used herein, the singular forms "a," "an," and "the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "comprising" and / or "including" are used in this specification, they may specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0051] Embodiments of the invention are described herein with reference to cross-sectional views which are schematic illustrations of idealized embodiments (and intermediate structures) of the invention, such that variations in the shapes shown due to, for example, manufacturing techniques and / or tolerances are anticipated. Accordingly, embodiments of the invention should not be limited to the specific shapes of the regions shown herein, but rather include deviations in shapes due to, for example, manufacturing techniques. For example, an implanted region shown as a rectangle typically has rounded or curved features and / or an implant concentration gradient at its edges rather than a binary change from an implanted region to a non-implanted region. Similarly, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation occurs. Accordingly, the regions shown in the figures are schematic in nature, their shapes do not represent the actual shape of the region of the device, and do not limit the scope of the invention.

[0052] Silicon carbide, a representative of third-generation semiconductor materials, is one of the wide-bandgap semiconductor materials with the most mature crystal production technology and device manufacturing capabilities, and is widely used. A global industry chain for materials, devices, and applications has emerged. Silicon carbide is an ideal semiconductor material for high-temperature, high-frequency, radiation-resistant, and high-power applications. The packaging process in the fabrication of silicon carbide semiconductor integrated circuits not only positions, secures, seals, protects the chip, and enhances thermal conductivity, but also bridges the gap between the chip's internal world and external circuitry, connecting the chip's contacts to the package's pins with wires. These pins, in turn, connect to other components via wires on the printed circuit board. Therefore, packaging technology is a crucial component for many integrated circuit products.

[0053] However, due to the fast switching speed of silicon carbide devices, the voltage spike problem caused by stray inductance in the packaging technology is particularly prominent. The LCR source meter that directly tests stray inductance and parasitic capacitance is expensive and has poor versatility. This method cannot be used to directly measure package parasitic parameters in all cases. A more flexible and variable parasitic parameter testing method is needed. Therefore, a feasible method for evaluating package stray inductance is urgently needed to evaluate and improve packaging technology.

[0054] See also Figure 1 , an embodiment of the present application provides a device for measuring package stray parameters, and the device 10 for measuring package stray parameters may include:

[0055] A signal generator 101 is configured to modulate the amplitude and frequency required for measurement. The signal generator 101 has a first end and a second end opposite to each other. A first resistor R1 has one end connected to the first end of the signal generator 101. An equivalent filter has one end connected to the end of the first resistor R1 remote from the signal generator, and the other end connected to the second end of the signal generator 101. An oscilloscope (not shown) is connected to the signal generator 101, the first resistor R1, and the equivalent filter 102, and is configured to obtain a cutoff frequency of the equivalent filter and, based on the cutoff frequency, derive internal parasitic parameters.

[0056] In the embodiment of the present application, the package spurious parameters can be measured using only the signal generator 101 and an oscilloscope, without the need for an expensive LCR source meter. This has the advantages of being low-cost, easy to implement, and widely applicable.

[0057] As an example, the signal generator 101 can generate a low-frequency sinusoidal oscillation signal through the main oscillator stage, which is amplified by the voltage amplifier to meet the amplitude and frequency requirements of the voltage required for measurement. The voltage can be directly output through the output attenuator, and the output voltage can be adjusted using the main oscillator output adjustment potentiometer.

[0058] In some embodiments, please refer to Figure 1The equivalent filter may include a second resistor R2, one end of which is connected to the end of the first resistor R1 away from the signal generator 101; a structure under test (DUT), one end of which is connected to the end of the second resistor R2 away from the first resistor R1, and the other end of which is connected to the second end of the signal generator 101. The equivalent filter allows specific frequency components in the signal to pass through while significantly attenuating other frequency components. This frequency-selective function of the equivalent filter can be used to filter out interference noise or perform spectrum analysis. Specifically, in this embodiment, the equivalent filter allows the amplitude and frequency required for measurement modulated by the signal generator 101 to pass through while significantly attenuating other frequency components. The frequency-selective function of the equivalent filter can better perform spectrum analysis in subsequent operations.

[0059] As an example, in order to eliminate interference, the structure DUT under test may be tested after removing internal transistors; the resistance value of the structure DUT under test may be smaller than the resistance value of the second resistor R2.

[0060] In some embodiments, the oscilloscope may include but is not limited to an oscilloscope with a fast Fourier transform (FFT) digital signal processing function; the oscilloscope may include a voltage differential probe, wherein one end of the positive clamp measuring point of the voltage differential probe is connected between the first resistor R1 and the signal generator 101, and the other end is connected between the signal generator 101 and the structure under test DUT; one end of the negative clamp measuring point of the voltage differential probe is connected between the first resistor R1 and the second resistor R2, and the other end is connected between the signal generator 101 and the structure under test DUT.

[0061] In some embodiments, the oscilloscope can also be used to obtain a first voltage waveform of the first voltage V1 between the first end of the signal generator 101 and the second end of the signal generator 101 and a second voltage waveform of the second voltage V2 of the equivalent filter, and perform FFT operation on the first voltage V1 and the second voltage V2 to obtain an amplitude-frequency characteristic curve of the first voltage waveform and an amplitude-frequency characteristic curve of the second voltage waveform; the oscilloscope obtains the cutoff frequency of the equivalent filter based on the amplitude-frequency characteristic curve of the first voltage waveform and the amplitude-frequency characteristic curve of the second voltage waveform.

[0062] It should be noted that the cutoff frequency refers to the boundary frequency (usually -3dB) at which the output signal energy of a system begins to drop sharply or rise sharply in a band-stop filter.

[0063] Please combine Figure 1 See Figure 2 The present application also provides a method for measuring package stray parameters, which is performed using the package stray parameter measuring device of any one of the above embodiments. The method for measuring package stray parameters may include the following steps:

[0064] S11: Turn on the signal generator to modulate the amplitude and frequency required for measurement;

[0065] S12: Obtain the cutoff frequency of the equivalent filter through an oscilloscope;

[0066] S13: Obtain internal parasitic parameters based on the cutoff frequency using an oscilloscope.

[0067] In the embodiment of the present application, the package spurious parameters can be measured using only a signal generator and an oscilloscope, without the need for an expensive LCR source meter. This has the advantages of being low-cost, easy to implement, and widely applicable.

[0068] In some embodiments, as Figure 3 As shown, step S12 of obtaining the cutoff frequency of the equivalent filter through an oscilloscope may include the following steps: step S121 to step S125.

[0069] S121: Acquire a first voltage waveform of a first voltage between a first terminal of a signal generator and a second terminal of a signal generator and a second voltage waveform of a second voltage of an equivalent filter;

[0070] S124: The oscilloscope performs an FFT operation on the first voltage and the second voltage to obtain an amplitude-frequency characteristic curve of the first voltage waveform and an amplitude-frequency characteristic curve of the second voltage waveform;

[0071] S125: The oscilloscope obtains a cutoff frequency of the equivalent filter based on the amplitude-frequency characteristic curve of the first voltage waveform and the amplitude-frequency characteristic curve of the second voltage waveform.

[0072] In some embodiments, as Figure 4 As shown, after obtaining the first voltage waveform of the first voltage between the first end of the signal generator and the second end of the signal generator and the second voltage waveform of the second voltage of the equivalent filter in step S121, and before the oscilloscope performs FFT operation on the first voltage and the second voltage in step S122 to obtain the amplitude-frequency characteristic curve of the first voltage waveform and the amplitude-frequency characteristic curve of the second voltage waveform, the following steps may also be included: step S122 to step S123.

[0073] S122: Compare the first voltage and the second voltage to obtain a phase difference between the first voltage waveform and the second voltage waveform;

[0074] S123: Determine whether the structure to be measured presents inductive reactance or capacitive reactance at the frequency based on the phase difference.

[0075] In some embodiments, as Figure 5As shown, step S125 in which the oscilloscope obtains the cutoff frequency of the equivalent filter based on the amplitude-frequency characteristic curve of the first voltage waveform and the amplitude-frequency characteristic curve of the second voltage waveform may include the following steps: step S1251 to step S1252.

[0076] S1251: The oscilloscope compares the amplitude-frequency characteristic curve of the first voltage waveform and the amplitude-frequency characteristic curve of the second voltage waveform;

[0077] S1252: The frequency range in which the amplitude-frequency characteristic curve of the second voltage waveform is lower than the amplitude-frequency characteristic curve of the first voltage waveform by a preset decibel is the cutoff frequency of the equivalent filter.

[0078] It should be understood that although Figures 2 to 5 The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. In addition, Figures 2 to 5 At least part of the steps may include multiple steps or multiple stages. These steps or stages do not necessarily have to be performed at the same time, but can be performed at different times. The order of execution of these steps or stages does not have to be sequential, but can be performed in turn or alternately with other steps or at least part of the steps or stages in other steps.

[0079] In order to more clearly illustrate the measurement method of the package stray parameters in some of the above embodiments, the following embodiments are combined with Figures 1 to 5 Understand.

[0080] In step S11 , the signal generator 101 is turned on to modulate the amplitude and frequency required for measurement.

[0081] As an example, the signal generator 101 can generate a low-frequency sinusoidal oscillation signal through the main oscillator stage, which is amplified by the voltage amplifier to meet the amplitude and frequency requirements of the voltage required for measurement. The voltage can be directly output through the output attenuator, and the output voltage can be adjusted using the main oscillator output adjustment potentiometer.

[0082] In step S12, the cutoff frequency of the equivalent filter is obtained through an oscilloscope.

[0083] As an example, the oscilloscope may include but is not limited to a fast Fourier transform (FFT) digital signal processing function; the oscilloscope may include but is not limited to a voltage differential probe, wherein one end of the positive clamp measuring point of the voltage differential probe is connected between the first resistor R1 and the signal generator 101, and the other end is connected between the signal generator 101 and the structure under test DUT; one end of the negative clamp measuring point of the voltage differential probe is connected between the first resistor R1 and the second resistor R2, and the other end is connected between the signal generator 101 and the structure under test DUT.

[0084] As an example, the equivalent filter may include a second resistor R2, one end of which is connected to the end of the first resistor R1 away from the signal generator 101; a structure to be tested DUT, one end of which is connected to the end of the second resistor R2 away from the first resistor R1, and the other end of which is connected to the second end of the signal generator 101; the equivalent filter can allow specific frequency components in the signal to pass through, while greatly attenuating other frequency components. By utilizing this frequency selection effect of the equivalent filter, interference noise can be filtered out or spectrum analysis can be performed. Specifically, in this embodiment, the equivalent filter can allow the amplitude and frequency required for measurement modulated by the signal generator 101 to pass through, while greatly attenuating other frequency components. By utilizing the frequency selection effect of the equivalent filter, spectrum analysis in subsequent operations can be better performed.

[0085] In step S121 , a first voltage waveform of a first voltage between a first terminal of the signal generator 101 and a second terminal of the signal generator and a second voltage waveform of a second voltage of the equivalent filter 102 are acquired.

[0086] As an example, obtaining a first voltage waveform of the first voltage V1 between the first terminal of the signal generator 101 and the second terminal of the signal generator 101 and obtaining a second voltage waveform of the second voltage V2 of the equivalent filter may be obtained simultaneously.

[0087] In step S122 , the first voltage V1 and the second voltage V2 are compared to obtain a phase difference between the first voltage waveform and the second voltage waveform.

[0088] In step S123 , it is determined whether the structure under test DUT presents inductive reactance or capacitive reactance at a certain frequency by using the phase difference.

[0089] As an example, when the structure under test (DUT) exhibits inductive reactance at a certain frequency, the internal parasitic parameters may include inductance. The internal parasitic parameters are calculated using the following formula:

[0090]

[0091] Where, represents the cutoff frequency, represents the resistance of the second resistor R2, represents inductance;

[0092] In another example, when the structure under test (DUT) exhibits capacitive reactance at a frequency, the internal parasitic parameters may include capacitance; the internal parasitic parameters are calculated using the following formula:

[0093]

[0094] Where, represents the cutoff frequency, represents the second resistor R2, Indicates capacitance.

[0095] In step S124 , the oscilloscope performs FFT operation on the first voltage V1 and the second voltage V2 to obtain an amplitude-frequency characteristic curve of the first voltage waveform and an amplitude-frequency characteristic curve of the second voltage waveform.

[0096] As an example, the oscilloscope may include a mathematical calculation and analysis function to perform FFT operations on the first voltage and the second voltage to obtain an amplitude-frequency characteristic curve of the first voltage waveform and an amplitude-frequency characteristic curve of the second voltage waveform.

[0097] In step S125 , the oscilloscope obtains the cutoff frequency of the equivalent filter based on the amplitude-frequency characteristic curve of the first voltage waveform and the amplitude-frequency characteristic curve of the second voltage waveform.

[0098] In step S1251 , the oscilloscope compares the amplitude-frequency characteristic curve of the first voltage waveform with the amplitude-frequency characteristic curve of the second voltage waveform.

[0099] In step S1252, the frequency range in which the amplitude-frequency characteristic curve of the second voltage waveform is lower than the amplitude-frequency characteristic curve of the first voltage waveform by a preset decibel is the cutoff frequency of the equivalent filter.

[0100] It should be noted that the cutoff frequency refers to the boundary frequency (usually -3dB) at which the output signal energy of a system begins to drop sharply or rise sharply in a band-stop filter.

[0101] As an example, the frequency range in which the amplitude-frequency characteristic curve of the second voltage waveform is lower than the amplitude-frequency characteristic curve of the first voltage waveform by a preset decibel may include but is not limited to 3 dB.

[0102] The technical features of the above-mentioned embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0103] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A device for measuring package spurious parameters, characterized in that: include: A signal generator for modulating the amplitude and frequency required for measurement; the signal generator has a first end and a second end opposite to each other; a first resistor, one end of which is connected to the first end of the signal generator; an equivalent filter, one end of which is connected to the end of the first resistor away from the signal generator, and the other end of which is connected to the second end of the signal generator; an oscilloscope, connected to the signal generator, the first resistor, and the equivalent filter, and configured to obtain a cutoff frequency of the equivalent filter and obtain internal parasitic parameters based on the cutoff frequency; Wherein, the equivalent filter includes: a second resistor, one end of which is connected to an end of the first resistor away from the signal generator; a structure to be measured, one end of which is connected to an end of the second resistor away from the first resistor, and the other end of which is connected to the second end of the signal generator; The oscilloscope is further used to obtain a first voltage waveform of the first voltage between the first end of the signal generator and the second end of the signal generator and a second voltage waveform of the second voltage of the equivalent filter, and perform FFT operation on the first voltage and the second voltage to obtain an amplitude-frequency characteristic curve of the first voltage waveform and an amplitude-frequency characteristic curve of the second voltage waveform; the oscilloscope obtains the cutoff frequency of the equivalent filter based on the amplitude-frequency characteristic curve of the first voltage waveform and the amplitude-frequency characteristic curve of the second voltage waveform.

2. The device for measuring package stray parameters according to claim 1, characterized in that: The resistance value of the structure to be measured is smaller than the resistance value of the second resistor.

3. The device for measuring package stray parameters according to claim 1, wherein: The oscilloscope includes a voltage differential probe, wherein one end of a positive clamping point of the voltage differential probe is connected between the first resistor and the signal generator, and the other end is connected between the signal generator and the structure to be measured; one end of a negative clamping point of the voltage differential probe is connected between the first resistor and the second resistor, and the other end is connected between the signal generator and the structure to be measured.

4. A method for measuring package spurious parameters, characterized in that: The method is performed using the package stray parameter measurement device according to any one of claims 1 to 3; the package stray parameter measurement method comprises: Turn on the signal generator to modulate the amplitude and frequency required for measurement; Obtaining the cutoff frequency of the equivalent filter through an oscilloscope; The internal parasitic parameters are obtained based on the cutoff frequency through the oscilloscope.

5. The method for measuring package stray parameters according to claim 4, characterized in that: The obtaining the cutoff frequency of the equivalent filter by using an oscilloscope includes: Acquire a first voltage waveform of a first voltage between a first terminal of the signal generator and a second terminal of the signal generator and a second voltage waveform of a second voltage of the equivalent filter; The oscilloscope performs an FFT operation on the first voltage and the second voltage to obtain an amplitude-frequency characteristic curve of the first voltage waveform and an amplitude-frequency characteristic curve of the second voltage waveform; The oscilloscope obtains a cutoff frequency of the equivalent filter based on an amplitude-frequency characteristic curve of the first voltage waveform and an amplitude-frequency characteristic curve of the second voltage waveform.

6. The method for measuring package stray parameters according to claim 5, characterized in that: After obtaining a first voltage waveform of a first voltage between the first terminal of the signal generator and the second terminal of the signal generator and a second voltage waveform of a second voltage of the equivalent filter, the oscilloscope performs an FFT operation on the first voltage and the second voltage to obtain an amplitude-frequency characteristic curve of the first voltage waveform and an amplitude-frequency characteristic curve of the second voltage waveform, and further includes: comparing the first voltage and the second voltage to obtain a phase difference between the first voltage waveform and the second voltage waveform; It is determined whether the structure to be measured presents inductive reactance or capacitive reactance at the frequency by using the phase difference.

7. The method for measuring package stray parameters according to claim 6, characterized in that: When the structure to be measured exhibits inductive reactance at the frequency, the internal parasitic parameters include inductance; the internal parasitic parameters are calculated using the following formula: ； Where, represents the cutoff frequency, represents the resistance value of the second resistor, represents inductance; When the structure to be measured exhibits capacitive reactance at the frequency, the internal parasitic parameters include capacitance; the internal parasitic parameters are calculated using the following formula: ； Where, represents the cutoff frequency, represents the second resistor, Indicates capacitance.

8. The method for measuring package stray parameters according to claim 5, characterized in that: The oscilloscope obtains the cutoff frequency of the equivalent filter based on the amplitude-frequency characteristic curve of the first voltage waveform and the amplitude-frequency characteristic curve of the second voltage waveform, including: The oscilloscope compares the amplitude-frequency characteristic curve of the first voltage waveform and the amplitude-frequency characteristic curve of the second voltage waveform; The frequency range in which the amplitude-frequency characteristic curve of the second voltage waveform is lower than the amplitude-frequency characteristic curve of the first voltage waveform by a preset decibel is the cut-off frequency of the equivalent filter.

9. The method for measuring package stray parameters according to claim 8, characterized in that: The cut-off frequency comprises 3dB.

10. The method for measuring package stray parameters according to claim 5, characterized in that: The oscilloscope performs an FFT operation on the first voltage and the second voltage to obtain an amplitude-frequency characteristic curve of the first voltage waveform and an amplitude-frequency characteristic curve of the second voltage waveform, including: The mathematical calculation and analysis function of the oscilloscope performs FFT operation on the first voltage and the second voltage to obtain an amplitude-frequency characteristic curve of the first voltage waveform and an amplitude-frequency characteristic curve of the second voltage waveform.

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