Display manufacturing equipment

Abstract

The display manufacturing device includes a foreign matter removal device and an assembly device. The foreign matter removal device removes foreign matter from a plurality of semiconductor light emitting devices. The assembly device assembles the removed plurality of semiconductor light emitting devices onto a display substrate. Foreign matter includes magnetic foreign matter and non-magnetic foreign matter. The foreign matter removal device includes: a first module for filtering non-magnetic foreign matter from foreign matter in a plurality of semiconductor light emitting devices; and a second module for filtering magnetic foreign matter from foreign matter in a plurality of semiconductor light emitting devices.

Description

Technical Field

[0001] An embodiment relates to a display manufacturing apparatus. Background Art

[0002] Display devices use self-luminous devices such as light emitting diodes (LEDs) as light sources for pixels to display high-quality images. LEDs have excellent durability even in harsh environments and can achieve long life and high brightness, making them a popular light source for next-generation display devices.

[0003] In recent years, research has been conducted to manufacture ultra-small light-emitting diodes using highly reliable inorganic crystal structure materials and to arrange them in panels of display devices (hereinafter referred to as "display panels") to use them as next-generation light sources.

[0004] Such display devices go beyond flat panel displays and extend to various forms such as flexible displays, foldable displays, stretchable displays, and rollable displays.

[0005] In order to achieve high resolution, the size of pixels is gradually reduced, and since light-emitting devices need to be aligned in a large number of pixels at such a small size, research on manufacturing ultra-small light-emitting diodes at the micrometer or nanometer level is being actively conducted.

[0006] Generally, a display device includes tens of millions of pixels. Therefore, it is difficult to align at least one light emitting device in each of the tens of millions of pixels with a small size, and therefore, various studies on solutions for aligning a plurality of light emitting devices in a display panel are being actively conducted recently.

[0007] As the size of light-emitting devices decreases, it becomes a very important issue to quickly and accurately transfer these light-emitting devices to the substrate. Recently developed transfer technologies include pick and place process, laser lift-off method or self-assembly method. In particular, the self-assembly method that uses magnetic bodies (or magnets) to transfer light-emitting devices to the substrate has attracted much attention recently.

[0008] In the self-assembly method, a large number of light-emitting devices are placed in a mold containing a fluid, and the light-emitting devices placed in the fluid are moved to the pixels of the substrate as the magnetic body moves, so that the light-emitting devices are aligned to each pixel. Therefore, the self-assembly method can quickly and accurately transfer a large number of light-emitting devices to the substrate, and it has attracted attention as a new-generation transfer method.

[0009] On the other hand, various foreign matters are generated during the process of manufacturing light-emitting devices on a wafer, and such foreign matters may cause various defects when the light-emitting devices are mounted on a substrate or in subsequent subsequent processes.

[0010] For example, Figure 1 As shown, when the light emitting device 3 is assembled in the assembly hole 2 of the substrate 1, there is a problem that poor electrical connection occurs between the light emitting device 3 and the substrate 1 due to foreign matter 4, resulting in poor lighting.

[0011] In addition, depending on the position of the foreign matter 4, the light emitting device 3 assembled to each assembly hole 2 is randomly tilted, so that there is a problem that it is difficult to ensure the uniformity of brightness between each sub-pixel.

[0012] In addition, due to the foreign matter 4, the electrical contact area between the light emitting device 3 and the substrate 1 is small, so there is a problem of reduced brightness.

[0013] Although not shown in the figure, there is a problem that a metal foreign matter and an electrode wiring may be electrically short-circuited when the electrode wiring is formed in a subsequent process.

[0014] On the other hand, foreign matter can be divided into magnetic foreign matter and non-magnetic foreign matter. Non-magnetic foreign matter includes metal foreign matter, non-metal foreign matter, debris foreign matter, etc.

[0015] Therefore, it is very important to remove the above-mentioned foreign matter before the light emitting device 3 is mounted on the substrate 1, and thus research on removing such foreign matter is urgently needed. Summary of the invention

[0016] Problems to be solved by the invention

[0017] Embodiments are directed to solving the aforementioned problems and other problems.

[0018] Another object of the embodiment is to provide a display manufacturing apparatus capable of removing foreign matter.

[0019] In addition, another object of the embodiment is to provide a display manufacturing apparatus for manufacturing a display device without defects caused by foreign matter.

[0020] The technical problems of the embodiment are not limited to the contents described in this item, but include technical problems that can be grasped through the description of the invention.

[0021] Technical solutions to the problem

[0022] In order to achieve the above or other purposes, according to one aspect of the embodiment, a display manufacturing device includes: a foreign matter removal device for removing foreign matter from a plurality of semiconductor light-emitting devices; and an assembling device for assembling the removed plurality of semiconductor light-emitting devices onto a display substrate, wherein the foreign matter includes magnetic foreign matter and non-magnetic foreign matter, and the foreign matter removal device includes: a first module for filtering the non-magnetic foreign matter from the foreign matter in the plurality of semiconductor light-emitting devices; and a second module for filtering the magnetic foreign matter from the foreign matter in the plurality of semiconductor light-emitting devices.

[0023] The first module includes: a first bath containing a first fluid to accommodate the plurality of semiconductor light emitting devices; and a first separation unit to separate the non-magnetic foreign matter from the magnetic foreign matter and the plurality of semiconductor light emitting devices among the foreign matter of the plurality of semiconductor light emitting devices accommodated in the first bath.

[0024] The first separation portion can separate the foreign matter from the plurality of semiconductor light emitting devices contained in the first fluid by rotating the plurality of semiconductor light emitting devices, and can separate the magnetic foreign matter and the plurality of semiconductor light emitting devices from the non-magnetic foreign matter in the separated foreign matter by moving the magnetic foreign matter and the plurality of semiconductor light emitting devices in the separated foreign matter.

[0025] The second module includes: a second bath containing a second fluid to accommodate the moved magnetic foreign matter and the plurality of semiconductor light emitting devices; and a second separation unit to separate the magnetic foreign matter from the plurality of semiconductor light emitting devices contained in the second bath.

[0026] The second separation unit includes: a second magnetic assembly including a plurality of magnets for moving the magnetic foreign matter and the plurality of semiconductor light emitting devices; and a capture substrate for capturing the magnetic foreign matter.

[0027] A diameter of the assembling hole of the display substrate may be greater than a diameter of the semiconductor light emitting device, and a diameter of the capturing hole of the capturing substrate may be smaller than a diameter of the semiconductor light emitting device.

[0028] The first bathing tank and the second bathing tank may be in communication with each other.

[0029] The foreign matter removing device includes a transmission portion disposed between the first module and the second module.

[0030] The transfer part may include a tray that transfers the moved magnetic foreign matter and the plurality of semiconductor light emitting devices to the second bath.

[0031] Effects of the Invention

[0032] In an embodiment, Figure 8 As shown, after removing foreign matter, that is, magnetic foreign matter and non-magnetic foreign matter, attached or adsorbed to each of the plurality of semiconductor light emitting devices by using the foreign matter removal device 400, the plurality of semiconductor light emitting devices from which the foreign matter has been removed can be assembled onto the display substrate by using the assembling device 500. Thus, it is possible to prevent defects that may occur when the semiconductor light emitting devices are assembled onto the display substrate in a state where foreign matter is attached or adsorbed to the semiconductor light emitting devices, such as lighting defects, electrical short circuit defects, brightness reduction, etc.

[0033] That is, after the semiconductor light emitting device is assembled on the display substrate, it can be electrically connected to the display substrate through a bonding process.

[0034] In the case where foreign matter is attached or adsorbed to the semiconductor light emitting device, the foreign matter hinders the electrical connection between the semiconductor light emitting device and the display substrate, which may cause poor lighting or reduced brightness. However, as shown in the embodiment, by removing the foreign matter attached or adsorbed to the semiconductor light emitting device before the assembly process, the electrical connection between the semiconductor light emitting device and the display substrate is not disturbed, thereby achieving good contact, thereby preventing poor lighting and reduced brightness.

[0035] In addition, after the semiconductor light emitting device is assembled on the display substrate, the electrode wiring can be electrically connected to the semiconductor light emitting device through a subsequent process. In the case where foreign matter is attached or adsorbed to the semiconductor light emitting device, the foreign matter, especially the foreign matter attached to the side of the semiconductor light emitting device, is electrically short-circuited with the electrode wiring, and thus the semiconductor light emitting device may not emit light. However, as shown in the embodiment, by removing the foreign matter attached or adsorbed to the semiconductor light emitting device before the assembly process, the foreign matter will not be electrically short-circuited with the electrode wiring, so that the semiconductor light emitting device can emit light by the voltage applied to the electrode wiring.

[0036] Furthermore, when there is foreign matter on the lower side of the semiconductor light-emitting device, the semiconductor light-emitting device is assembled and bonded in a tilted state due to the foreign matter, so that electrical contact cannot be smoothly achieved, resulting in poor lighting or reduced brightness. However, as shown in the embodiment, by removing foreign matter attached or adsorbed to the semiconductor light-emitting device before the assembly process, the semiconductor light-emitting device is assembled and bonded to an accurate position without tilting, thereby maximizing the contact area to prevent poor lighting and improve brightness.

[0037] Furthermore, by assembling a semiconductor light emitting device from which foreign matter is removed on a display substrate, a lighting rate is improved by ensuring a high transfer rate, thereby enabling a high-resolution display to be realized.

[0038] In addition, by assembling a semiconductor light-emitting device from which foreign matter is removed on a display substrate, a high-quality display can be realized by improving electrical / optical characteristics.

[0039] The additional scope to which the embodiment can be applied can become more clear through the following detailed description. However, those skilled in the art can clearly understand the various changes and modifications within the thought and scope of the embodiment, so it should be understood that the detailed description and specific embodiments such as the preferred embodiment are only exemplary. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 Defects caused by foreign matter are shown.

[0041] Figure 2 The living room of a house in which the display device is arranged according to the embodiment is shown.

[0042] Figure 3 This is a block diagram schematically showing a display device according to the embodiment.

[0043] Figure 4 It is shown Figure 3 A circuit diagram of an example of a pixel.

[0044] Figure 5 yes Figure 2 An enlarged view of the first panel area in the display device.

[0045] Figure 6 yes Figure 5 Magnified view of the A2 area.

[0046] Figure 7 This is a diagram showing an example in which the light-emitting device according to the embodiment is assembled on a substrate by a self-assembly method.

[0047] Figure 8 : is a block diagram showing a display manufacturing apparatus according to an embodiment.

[0048] Fig. 9 It is a figure which shows the foreign matter removal apparatus of an Example.

[0049] Fig.10 1 is a plan view showing the foreign matter removal device according to the first embodiment.

[0050] Fig.11 is shown along Fig.10 Cross-sectional view taken along line AB.

[0051] Fig.12 1 is a plan view showing a display substrate according to the embodiment.

[0052] Fig.13 is along Fig.12 Cross-sectional view taken along line CD.

[0053] Fig.14 1 is a top view showing a capture substrate according to the embodiment.

[0054] Fig.15 is along Fig.14 A cross-sectional view taken along line EF.

[0055] Figures 16 to 23 A foreign matter removing process according to the embodiment is shown.

[0056] Fig.24 1 is a plan view showing a foreign matter removal device according to a second embodiment.

[0057] Fig.25 is along Fig.24 Cross-sectional view taken along line AB.

[0058] The dimensions, shapes, values, etc. of the components shown in the drawings may be different from the actual ones. In addition, even if the same components are shown in different dimensions, shapes, quantities, etc. between the drawings, this is only an example on the drawings, and the same components may have the same dimensions, shapes, values, etc. between the drawings. DETAILED DESCRIPTION

[0059] Below, the embodiments disclosed in this specification will be described in detail with reference to the accompanying drawings. Regardless of the figure numbers, the same or similar constituent elements are given the same figure numbers and their descriptions are omitted. The suffixes "module" and "unit" of the constituent elements used in the following description are given or mixed for the sake of easy writing of the specification, and they themselves do not have meanings or functions that distinguish each other. In addition, the accompanying drawings are used to make the embodiments disclosed in this specification easy to understand, and the technical ideas disclosed in this specification are not limited by the accompanying drawings. In addition, when it is mentioned that an element such as a layer, a region or a substrate exists "on" another constituent element, it should be understood that it can exist directly on another element, or there can be other intermediate elements between them.

[0060] The display device described in this specification may include a TV, a light emitter, a mobile phone, a smart phone, a head-up display (HUD) for a vehicle, a backlight unit for a laptop computer, a display for VR or AR, etc. However, even in the form of a new product developed later, the configuration of the embodiments described in this specification can be applied to a device capable of displaying.

[0061] Hereinafter, a light emitting device according to an embodiment and a display device including the light emitting device will be described.

[0062] Figure 2 The living room of a house in which the display device according to the embodiment is installed is shown.

[0063] Reference Figure 2 The display device 100 of the embodiment can display the status of various electronic products such as a washing machine 101, a sweeping robot 102, and an air purifier 103, can communicate with each electronic product based on IOT, and can also control each electronic product based on user setting data.

[0064] The display device 100 of the embodiment may include a flexible display manufactured on a thin and soft substrate. The flexible display maintains the characteristics of an existing flat panel display and can be bent or rolled like paper.

[0065] In a flexible display, visual information can be realized by independently controlling the light emission of unit pixels configured in a matrix form. A unit pixel refers to the smallest unit for realizing a color. The unit pixel of a flexible display can be realized by a light-emitting device. In an embodiment, the light-emitting device can be a Micro-LED or a Nano-LED, but is not limited thereto.

[0066] Figure 3 is a block diagram schematically showing a display device of an embodiment, Figure 4 It is shown Figure 3 A circuit diagram of an example of a pixel.

[0067] Reference Figure 3 and Figure 4 The display device of the embodiment may include a display panel 10 , a driving circuit 20 , a scan driving unit 30 , and a power supply circuit 50 .

[0068] The display device 100 of the embodiment may drive the light emitting devices in an active matrix (AM) manner or a passive matrix (PM) manner.

[0069] The driving circuit 20 may include a data driving section 21 and a timing control section 22 .

[0070] The display panel 10 may be formed in a rectangular shape, but is not limited thereto. That is, the display panel 10 may be formed in a circular or oval shape. At least one side of the display panel 10 may be formed to be curved with a prescribed curvature.

[0071] The display panel 10 can be divided into a display area DA and a non-display area NDA arranged around the display area DA. The display area DA is an area where a plurality of pixels PX are formed to display an image. The display panel 10 may include a plurality of data lines D1 to Dm (m is an integer greater than 2), a plurality of scanning lines S1 to Sn (n is an integer greater than 2) intersecting the plurality of data lines D1 to Dm, a high potential voltage line VDDL supplied with a high potential voltage, a low potential voltage line VSSL supplied with a low potential voltage, and a plurality of pixels PX connected to the plurality of data lines D1 to Dm and the plurality of scanning lines S1 to Sn.

[0072] Each of the plurality of pixels PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 may emit a first color light of a first main wavelength, the second sub-pixel PX2 may emit a second color light of a second main wavelength, and the third sub-pixel PX3 may emit a third color light of a third main wavelength. The first color light may be red light, the second color light may be green light, and the third color light may be blue light, but are not limited thereto. In addition, Figure 3 It is illustrated that each of the plurality of pixels PX includes three sub-pixels, but the present invention is not limited thereto. That is, each of the plurality of pixels PX may include more than four sub-pixels.

[0073] Each of the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may be connected to at least one of the plurality of data lines D1-Dm, at least one of the plurality of scan lines S1-Sn, and a high potential voltage line VDDL. Figure 4 As shown, the first subpixel PX1 may include a plurality of light emitting devices LD, a plurality of transistors for supplying current to the plurality of light emitting devices LD, and at least one capacitor Cst.

[0074] Although not shown, each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may include only one light emitting device LD and at least one capacitor Cst.

[0075] Each of the plurality of light emitting devices LD may be a semiconductor light emitting diode including a first electrode, a plurality of conductive semiconductor layers and a second electrode. Here, the first electrode may be an anode electrode, and the second electrode may be a cathode electrode, but is not limited thereto.

[0076] The light emitting device LD may be one of a horizontal type light emitting device, a flip-chip type light emitting device, and a vertical type light emitting device.

[0077] like Figure 4As shown, the plurality of transistors may include: a driving transistor DT, supplying current to the plurality of light emitting devices LD; and a scanning transistor ST, supplying a data voltage to the gate electrode of the driving transistor DT. The driving transistor DT may include: a gate electrode connected to the source electrode of the scanning transistor ST; a source electrode connected to a high potential voltage line VDDL to which a high potential voltage is applied; and a drain electrode connected to the plurality of first electrodes of the plurality of light emitting devices LD. The scanning transistor ST may include: a gate electrode connected to the scanning line Sk (k is an integer satisfying 1≤k≤n); a source electrode connected to the gate electrode of the driving transistor DT; and a drain electrode connected to the data line Dj (j is an integer satisfying 1≤j≤m).

[0078] The capacitor Cst is formed between the gate electrode and the source electrode of the driving transistor DT. The storage capacitor Cst stores a difference between a gate voltage and a source voltage of the driving transistor DT.

[0079] The driving transistor DT and the scanning transistor ST may be formed by thin film transistors. Figure 4 In the embodiment, the driving transistor DT and the scanning transistor ST are described with the driving transistor DT and the scanning transistor ST being formed by a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor), but the present invention is not limited thereto. The driving transistor DT and the scanning transistor ST may also be formed by an N-type MOSFET. In this case, the positions of the source electrode and the drain electrode of each of the driving transistor DT and the scanning transistor ST may be changed.

[0080] In addition, Figure 4 In the embodiment, each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 is illustrated as including a 2T1C (2Transistor-1capacitor) having a driving transistor DT, a scanning transistor ST, and a capacitor Cst, but the present invention is not limited thereto. Each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 may include a plurality of scanning transistors ST and a plurality of capacitors Cst.

[0081] The second sub-pixel PX2 and the third sub-pixel PX3 may be represented by substantially the same circuit diagram as the first sub-pixel PX1 , and thus detailed description thereof will be omitted.

[0082] The driving circuit 20 outputs a plurality of signals and a plurality of voltages for driving the display panel 10. To this end, the driving circuit 20 may include a data driving part 21 and a timing control part 22.

[0083] The data driving part 21 receives the digital video data DATA and the source control signal DCS from the timing control part 22. The data driving part 21 converts the digital video data DATA into a plurality of analog data voltages according to the source control signal DCS and supplies the analog data voltages to the plurality of data lines D1Dm of the display panel 10.

[0084] The timing control unit 22 receives digital video data DATA and a plurality of timing signals from a host system. The plurality of timing signals may include a vertical sync signal, a horizontal sync signal, a data enable signal, and a dot clock. The host system may be an application processor of a smart phone or a tablet PC, a display, a system-on-chip of a TV, etc.

[0085] The timing control unit 22 generates a plurality of control signals for controlling the operation time of the data driving unit 21 and the scan driving unit 30. The plurality of control signals may include a source control signal DCS for controlling the operation time of the data driving unit 21 and a scan control signal SCS for controlling the operation time of the scan driving unit 30.

[0086] The driving circuit 20 may be disposed in a non-display area NDA provided on one side of the display panel 10. The driving circuit 20 is formed by an integrated circuit (IC) and may be mounted on the display panel 10 in a COG (chip on glass) manner, a COP (chip on plastic) manner, or an ultrasonic bonding manner, but the present invention is not limited thereto. For example, the driving circuit 20 may be mounted on a circuit board (not shown) instead of the display panel 10.

[0087] The data driving unit 21 may be mounted on the display panel 10 by a COG (chip on glass) method, a COP (chip on plastic) method, or an ultrasonic bonding method, and the timing control unit 22 may be mounted on a circuit board.

[0088] The scan driving unit 30 receives a scan control signal SCS from the timing control unit 22. The scan driving unit 30 generates a plurality of scan signals according to the scan control signal SCS and supplies the scan signals to the plurality of scan lines S1 to Sn of the display panel 10. The scan driving unit 30 includes a plurality of transistors and may be formed in the non-display area NDA of the display panel 10. Alternatively, the scan driving unit 30 may be formed by an integrated circuit, in which case, it may be mounted on a gate flexible film attached to the other side of the display panel 10.

[0089] The circuit board can be attached to a plurality of pads disposed on one side edge of the display panel 10 using an anisotropic conductive film. Therefore, a plurality of leads of the circuit board can be electrically connected to the plurality of pads. The circuit board can be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip on film. The circuit board can be bent toward the lower portion of the display panel 10. Therefore, one side of the circuit board can be attached to one side edge of the display panel 10, and the other side can be configured at the lower portion of the display panel 10, and can be connected to a system board on which a host system is installed.

[0090] The power supply circuit 50 may generate a plurality of voltages required for driving the display panel 10 from the main power applied from the system board and supply the voltages to the display panel 10. For example, the power supply circuit 50 may generate a high potential voltage VDD and a low potential voltage VSS for driving the plurality of light emitting devices LD of the display panel 10 from the main power, and supply the voltages to the high potential voltage line VDDL and the low potential voltage line VSSL of the display panel 10. In addition, the power supply circuit 50 generates and supplies a driving voltage for driving the driving circuit 20 and the scanning driving section 30 from the main power.

[0091] Figure 5 yes Figure 3 An enlarged view of the first panel area in the display device.

[0092] Reference Figure 5 In the display device 100 of the embodiment, a plurality of panel regions such as the first panel region A1 may be mechanically and electrically connected by tiling.

[0093] The first panel area A1 may include each unit pixel ( Figure 3 A plurality of light emitting devices 150 configured with PX).

[0094] For example, the unit pixel PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. For example, a plurality of red semiconductor light emitting devices 150R may be configured in the first sub-pixel PX1, a plurality of green semiconductor light emitting devices 150G may be configured in the second sub-pixel PX2, and a plurality of blue semiconductor light emitting devices 150B may be configured in the third sub-pixel PX3. The unit pixel PX may also include a fourth sub-pixel not configured with a semiconductor light emitting device, but is not limited thereto.

[0095] Figure 6 yes Figure 5 Magnified view of the A2 area.

[0096] Reference Figure 6 The display device 100 of the embodiment may include a substrate 200, assembly lines 201 and 202, an insulating layer 206, and a plurality of semiconductor light emitting devices 150. More components may be included.

[0097] The group assembly line may include a first group assembly line 201 and a second group assembly line 202 that are separated from each other. The first group assembly line 201 and the second group assembly line 202 may generate a dielectrophoretic force for assembling the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 may be one of a horizontal semiconductor light emitting device, a flip-chip semiconductor light emitting device, and a vertical semiconductor light emitting device.

[0098] In order to realize each unit pixel (sub-pixel), the semiconductor light emitting device 150 may include a red semiconductor light emitting device 150, a green semiconductor light emitting device 150G and a blue semiconductor light emitting device 150B0, but is not limited thereto and may also have a red phosphor and a green phosphor, etc., to realize red and green respectively.

[0099] The substrate 200 may be a supporting member that supports components disposed on the substrate 200 or a protecting member that protects the components.

[0100] The substrate 200 may be a rigid substrate or a flexible substrate. The substrate 200 may be formed of sapphire, glass, silicon or polyimide. In addition, the substrate 200 may include a flexible material such as PEN (Polyethylene Naphthalate), PET (Polyethylene Terephthalate), etc. In addition, the substrate 200 may be a transparent material, but is not limited thereto.

[0101] The substrate 200 may be Figure 3 and Figure 4 Although a backplane of circuits such as transistors ST, DT, capacitor Cst, and signal wiring is provided in the sub-pixels PX1, PX2, and PX3, the present invention is not limited thereto.

[0102] The insulating layer 206 may include an organic material having insulation and flexibility such as polyimide, PAC, PEN, PET, polymer, or an inorganic material such as silicon oxide (SiO2) or silicon nitride series (SiNx), and may also be formed integrally with the substrate 200 to form a single substrate.

[0103] The insulating layer 206 may be a conductive adhesive layer having adhesiveness and conductivity, and the conductive adhesive layer is flexible, thereby realizing the flexible function of the display device. For example, the insulating layer 206 may be a conductive adhesive layer such as an anisotropic conductive film (ACF) or an anisotropic conductive medium, a solution containing conductive particles, etc. The conductive adhesive layer may be a layer having conductivity in a direction perpendicular to the thickness and electrical insulation in a direction horizontal to the thickness.

[0104] The insulating layer 206 may include an assembly hole 203 for inserting the semiconductor light emitting device 150. Therefore, during self-assembly, the semiconductor light emitting device 150 may be easily inserted into the assembly hole 203 of the insulating layer 206. The assembly hole 203 may be referred to as an insertion hole, a fixing hole, an alignment hole, or the like.

[0105] The assembly hole 203 may be different according to the shape of the semiconductor light emitting device 150. For example, the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device may have different shapes, respectively, and may include an assembly hole 203 having a shape corresponding to the shape of each of these semiconductor light emitting devices. For example, the assembly hole 203 may include a first assembly hole for assembling a red semiconductor light emitting device, a second assembly hole for assembling a green semiconductor light emitting device, and a third assembly hole for assembling a blue semiconductor light emitting device. For example, the red semiconductor light emitting device may have a circular shape, the green semiconductor light emitting device may have a first elliptical shape including a first short axis and a second long axis, and the blue semiconductor light emitting device may have a second elliptical shape including a second short axis and a second long axis, but is not limited thereto. The second long axis of the ellipse of the blue semiconductor light emitting device may be greater than the second long axis of the ellipse of the green semiconductor light emitting device, and the second short axis of the ellipse of the blue semiconductor light emitting device may be smaller than the first short axis of the ellipse of the green semiconductor light emitting device.

[0106] On the other hand, the semiconductor light emitting device 150 may be mounted on the substrate 200 by, for example, a self-assembly method ( Figure 7 ) and transfer methods, etc.

[0107] Figure 7 This is a diagram showing an example in which the semiconductor light emitting device according to the embodiment is assembled onto a substrate by a self-assembly method.

[0108] Reference Figure 6 and Figure 7 , explaining the self-assembly method of semiconductor light-emitting devices.

[0109] The substrate 200 may be a panel substrate of a display device. In the following description, the substrate 200 is described as a panel substrate of a display device, but the embodiment is not limited thereto.

[0110] The substrate 200 may be formed of glass or polyimide. In addition, the substrate 200 may include a flexible material, such as PEN (Polyethylene Naphthalate), PET (Polyethylene Terephthalate), etc. In addition, the substrate 200 may be a transparent material, but is not limited thereto.

[0111] Reference Figure 7 , the semiconductor light emitting device 150 can be put into a chamber 1300 filled with a fluid 1200. The fluid 1200 can be water such as ultrapure water, but is not limited thereto. The chamber can be called a water tank, a container, a vessel, etc.

[0112] Next, the substrate 200 may be disposed on the chamber 1300. According to an embodiment, the substrate 200 may also be loaded into the chamber 1300.

[0113] like Figure 6 As shown, a pair of assembly lines 201 and 202 corresponding to the semiconductor light emitting devices 150 to be assembled can be arranged on the substrate 200.

[0114] The assembly wires 201 and 202 may be formed of transparent electrode ITO, or may include a metal substance with excellent conductivity. For example, the assembly wires 201 and 202 may be formed of at least one of titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), molybdenum (Mo), or an alloy thereof.

[0115] The assembly lines 201 and 202 may form an electric field by a voltage supplied from the outside, and a dielectrophoretic force may be formed between the assembly lines 201 and 202 by the electric field. The light emitting device 150 may be fixed to the assembly hole 203 on the substrate 200 by the dielectrophoretic force.

[0116] The interval between the assembly lines 201 and 202 is formed to be smaller than the width of the semiconductor light emitting device 150 and the width of the assembly hole 203, so that the assembly position of the semiconductor light emitting device 150 using the electric field can be fixed more accurately.

[0117] An insulating layer 206 is formed on the assembly wires 201 and 202 to protect the assembly wires 201 and 202 from the fluid 1200 and prevent leakage of current flowing in the assembly wires 201 and 202. The insulating layer 206 can be formed of an inorganic insulator such as silicon dioxide or aluminum oxide or an organic insulator in a single layer or multiple layers.

[0118] In addition, the insulating layer 206 may include a material with insulating properties and flexibility, such as polyimide, PEN, PET, etc., and may also be formed integrally with the substrate 200 to form a single substrate.

[0119] The insulating layer 206 may be an insulating layer having adhesiveness or a conductive adhesive layer having conductivity. The insulating layer 206 has flexibility, so as to realize the flexible function of the display device.

[0120] The insulating layer 206 may have a partition wall, which forms the assembly hole 203. For example, when forming the substrate 200, a portion of the insulating layer 206 is removed so that each of the plurality of semiconductor light emitting devices 150 can be assembled to the assembly hole 203 of the insulating layer 206.

[0121] The substrate 200 is formed with an assembly hole 203 for combining a plurality of semiconductor light emitting devices 150, and the surface formed with the assembly hole 203 can be in contact with the fluid 1200. The assembly hole 203 can guide the accurate assembly position of the semiconductor light emitting device 150.

[0122] On the other hand, the assembly hole 203 may have a shape and size corresponding to the shape of the semiconductor light emitting device 150 assembled to the corresponding position, thereby preventing other semiconductor light emitting devices or a plurality of semiconductor light emitting devices from being assembled to the assembly hole 203 .

[0123] Refer again Figure 7 , after configuring the substrate 200, the assembly device 1100 including the magnetic body can be moved along the substrate 200. As the magnetic body, for example, a magnet or an electromagnet can be used. In order to maximize the area affected by the magnetic field in the fluid 1200, the assembly device 1100 can move in a state of contact with the substrate 200. According to an embodiment, the assembly device 1100 may include a plurality of magnetic bodies, or may also include a magnetic body of a size corresponding to the substrate 200. In this case, the moving distance of the assembly device 1100 may also be limited within a specified range.

[0124] The semiconductor light emitting device 150 within the chamber 1300 may move toward the assembling apparatus 1100 using the magnetic field generated by the assembling apparatus 1100 .

[0125] The semiconductor light emitting device 150 may enter the assembly hole 203 and contact the substrate 200 while moving toward the assembly apparatus 1100 .

[0126] At this time, the semiconductor light emitting device 150 in contact with the substrate 200 can be prevented from being detached due to the movement of the assembling apparatus 1100 by the electric field applied by the assembly lines 201 and 202 formed on the substrate 200 .

[0127] That is, by utilizing the electromagnetic field self-assembly method, the time required to assemble each of the plurality of semiconductor light emitting devices 150 to the substrate 200 can be greatly shortened, thereby realizing a large-area high-pixel display more quickly and economically.

[0128] A predetermined solder layer (not shown) is further formed between the semiconductor light emitting device 150 assembled on the assembly hole 203 of the substrate 200 and the substrate 200 , thereby improving the bonding strength of the semiconductor light emitting device 150 .

[0129] Next, electrode wiring (not shown) is connected to the semiconductor light emitting device 150, and power may be applied.

[0130] Then, although not shown in the figure, at least one insulating layer may be formed through a subsequent process. The at least one insulating layer may be a transparent resin or a resin containing a reflective material or a scattering material.

[0131] On the other hand, in an embodiment, foreign matter attached or adsorbed to the semiconductor light emitting device is removed in advance before the semiconductor light emitting device is assembled onto the display substrate, thereby preventing the semiconductor light emitting device to which the foreign matter is attached or adsorbed from being assembled onto the display substrate or various defects occurring after assembly, thereby preventing poor lighting, electrical short circuit, reduced brightness, etc.

[0132] The following omitted description can be obtained from Figures 2 to 5 The above description can be easily understood from the corresponding drawings.

[0133] Figure 8 : is a block diagram showing a display manufacturing apparatus according to an embodiment.

[0134] Reference Figure 8 The display manufacturing apparatus of the embodiment may include a foreign matter removing apparatus 400 and an assembling apparatus 500 .

[0135] The assembly device 500 of the embodiment is as follows Figure 7 As shown in FIG. 1 , a semiconductor light emitting device 150 placed in a fluid 1200 in a chamber 1300 is assembled onto a display substrate 200, and the device includes Figure 7 The assembly device 1100 of the magnetic body shown in FIG. Figure 7 The detailed description is omitted here.

[0136] like Fig.12 and Fig.13 As shown, the display substrate 300 may include a substrate 310 , a first group of assembly lines 321 and a second group of assembly lines 322 , an insulating layer 330 , and a partition wall 340 .

[0137] The substrate 310, the first group of assembly lines 321, the second group of assembly lines 322, and the partition wall 340 are respectively Figure 6 The illustrated substrate 200, assembly lines 201, 202, and partition walls 206 are identical. The insulating layer 330 may be formed of an organic substance or an inorganic substance.

[0138] The partition wall 340 may have a plurality of assembly holes 345. For example, Fig.12 As shown, a plurality of assembly holes 345 may be formed on the first group of assembly lines 321 and the second group of assembly lines 322 along the first direction x.

[0139] The semiconductor light emitting device 150 may be assembled (or inserted) into the assembly hole 345. For example, the plurality of semiconductor light emitting devices 150 are moved by the movement of the magnet, and a voltage is applied to the first assembly line 321 and the second assembly line 322, so that a dielectrophoretic force may be formed between the first assembly line 321 and the second assembly line 322. Due to the dielectrophoretic force, the semiconductor light emitting device 150 located near the assembly hole 345 is inserted into the assembly hole 345, so that the semiconductor light emitting device 150 may be assembled onto the substrate 310.

[0140] For example, the diameter D1 of the assembly hole 345 is greater than the diameter D11 of the semiconductor light emitting device 150 , and thus the semiconductor light emitting device 150 may be easily inserted into the assembly hole 345 .

[0141] The plurality of semiconductor light emitting devices 150 may include, for example, a red semiconductor light emitting device, a green semiconductor light emitting device, and a blue semiconductor light emitting device. The red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device may have shapes different from each other. For example, the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device may have a circular shape, an elliptical shape, a quadrilateral shape, and the like. For example, one of the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device may have a circular shape, and the other semiconductor light emitting devices may have an elliptical shape different from each other. The semiconductor light emitting device having an elliptical shape may have a short axis and a long axis having lengths different from each other. For example, the length of the long axis may be greater than the length of the short axis.

[0142] For example, in the case where the semiconductor light emitting device 150 is an ellipse having a short axis and a long axis, the diameter D1 of the assembly hole 345 may be greater than the length of the long axis of the semiconductor light emitting device 150, and the capture hole ( Fig.14 and Fig.15 The diameter D2 of 545) may be smaller than the length of the short axis of the semiconductor light emitting device 150.

[0143] As described above, after assembling a plurality of semiconductor light emitting devices 150 on the substrate 310, through subsequent processes, the electrode wiring is electrically connected to each of the plurality of semiconductor light emitting devices 150, thereby manufacturing a display device in which each of the plurality of semiconductor light emitting devices 150 emits light and displays a color image.

[0144] The foreign matter removing apparatus 400 of the embodiment may be an apparatus for removing foreign matter from the semiconductor light emitting device 150 .

[0145] Foreign matter is foreign matter generated during the manufacturing, transportation and / or transfer process, storage and circulation process or subsequent process of the semiconductor light-emitting device 150, and the foreign matter can be divided into magnetic foreign matter and non-magnetic foreign matter. The process of manufacturing the semiconductor light-emitting device 150 may include many processes such as a deposition process, an etching process, a photolithography process, and a grinding process. During the execution of these many processes, many substances are added or removed, etched or cut into a specified size, thereby generating a lot of fragments. On the other hand, during the transportation, storage, and circulation process of the semiconductor light-emitting device 150, foreign matter may flow in from the outside, and such foreign matter may be referred to as a pollution source flowing in from the external environment.

[0146] Many foreign matters generated through this series of processes may be attached or adsorbed to the semiconductor light emitting device 150 without being removed. In the case where the semiconductor light emitting device 150 to which foreign matters are attached or adsorbed is mounted on the display substrate 300, various defects may occur due to these foreign matters. For example, due to foreign matters, the semiconductor light emitting device 150 may not be bonded to the display substrate 300. For example, due to foreign matters, the semiconductor light emitting device 150 cannot be electrically connected to the display substrate 300, and lighting failure may occur. For example, due to foreign matters, the semiconductor light emitting device 150 is assembled obliquely to the assembly hole 345 of the display substrate 300, and it may be difficult to ensure brightness uniformity or difficult to bond. For example, due to foreign matters, other defects may occur in subsequent processes performed after assembling the semiconductor light emitting device 150, such as electrical short circuit failures between foreign matters and electrode wiring.

[0147] Therefore, before the semiconductor light emitting device 150 is assembled onto the display substrate 300, foreign matter attached to or adsorbed onto the semiconductor light emitting device 150 is removed in advance, thereby preventing the semiconductor light emitting device 150 to which foreign matter is attached or adsorbed from being assembled onto the display substrate 300 or various defects from occurring after assembly, thereby preventing poor lighting, electrical short circuit, reduced brightness, etc.

[0148] On the other hand, the magnetic material may be included in the semiconductor light emitting device 150 as a magnetic layer, for example, so that the semiconductor light emitting device 150 is pulled by the magnetic body during self-assembly. In the etching process for forming the semiconductor light emitting device 150, the magnetic layer may be attached or adsorbed to the semiconductor light emitting device 150 as magnetic foreign matter in the form of fragments.

[0149] Non-magnetic foreign matter may refer to all foreign matter except magnetic foreign matter. Non-magnetic foreign matter may include, for example, metal foreign matter, non-metal foreign matter, debris foreign matter, etc. Metal foreign matter may be foreign matter generated when forming the electrode of the semiconductor light-emitting device 150 or foreign matter generated in a sacrificial layer used for transferring the semiconductor light-emitting device 150 to another substrate, such as a donor substrate, and then separating it again. Non-metallic foreign matter is foreign matter generated in a wafer, a passivation layer, etc., such as PV series, silicon series, Carbon series, etc. Debris foreign matter may be foreign matter generated by the breakage of the semiconductor light-emitting device 150 or the wafer.

[0150] In an embodiment, a foreign matter removal device 400 is used to pre-remove foreign matter attached or adsorbed to the semiconductor light-emitting device 150, and an assembling device 500 is used to assemble the semiconductor light-emitting device 150 with these foreign matter removed onto a display substrate 300, thereby preventing poor lighting, electrical short circuit, reduced brightness, etc.

[0151] Fig. 9 It is a figure which shows the foreign matter removal apparatus of an Example.

[0152] Reference Figure 8 and Fig. 9 The foreign matter removal device 400 may include a supply part 413, a first module 410, and a second module 420. The supply part 413 is a member that allows the plurality of semiconductor light emitting devices 150 to be easily supplied to the first module 410, and may be omitted when the plurality of semiconductor light emitting devices 150 are directly and easily supplied to the first module 410.

[0153] For example, the plurality of semiconductor light emitting devices 150 filled in the container 411 may be supplied to the supply unit 413 (S1). That is, the plurality of semiconductor light emitting devices 150 filled in the container 411 may be placed on one side of the rotator 415. The plurality of first magnets 407 may be arranged along the outer circumference of the rotator 415. For example, the plurality of first magnets 407 are fastened to the outer circumference of the rotator 415 and can be attached and detached.

[0154] The plurality of semiconductor light emitting devices 150 placed in the container 411 may be distributed by the rotator 415 (S2). That is, by the rotation of the rotator 415, the plurality of semiconductor light emitting devices 150 may be distributed by the plurality of first magnets 407 disposed on the outer circumference of the rotator 415. For example, the plurality of semiconductor light emitting devices 150 placed in the container 411 are pulled by the first magnets 407 located at the placement position, and thus may be fixed by the first magnets 407.

[0155] For example, the positions of the plurality of semiconductors to be placed are the same, and the plurality of first magnets 407 can be moved to the corresponding placement positions in sequence by the rotation of the rotator 415. For example, if a plurality of semiconductor light emitting devices 150 that can be managed by the first magnets 407 are placed, then by the rotation of the rotator 415, the other first magnets 407 are moved to the corresponding placement positions, and the plurality of semiconductor light emitting devices 150 can be placed, and thus fixed by the corresponding first magnets 407. In the manner described above, each of the plurality of first magnets 407 configured on the rotator 415 can fix the plurality of semiconductor light emitting devices 150 in sequence. The plurality of first magnets 407 are also rotated by the rotator 415, and as the plurality of first magnets 407 rotate, the plurality of semiconductor light emitting devices 150 managed by the corresponding first magnets 407 can rotate and move along the corresponding first magnets 407 along the rotation direction of the corresponding first magnets 407.

[0156] Each of the plurality of first magnets 407 rotated by the rotator 415 may be separated from the rotator 415 and transferred to the first module 410 (S3). That is, the plurality of first magnets 407 separated from the rotator 415 move to the first module 410 and may be arranged, for example, in a row in the first module 410. At this time, the plurality of first magnets 407 may be spaced at the same intervals from each other within the first module 410, but are not limited thereto.

[0157] For example, the supply part 413 and the first module 410 are in communication with each other, and the first magnet 407 of the supply part 413 may be freely moved to the first module 410 without interference, but is not limited thereto.

[0158] Each of the plurality of first magnets 407 moved from the supply unit 413 to the first module 410 moves in a prescribed form so that foreign matter can be separated from the semiconductor light emitting device 150 (S4). For example, each of the plurality of first magnets 407 can be rotated and moved in a circular form or in a zigzag form. For example, each of the plurality of first magnets 407 can be rotated and moved alternately in a clockwise direction and a counterclockwise direction according to a prescribed period. That is, as long as as much foreign matter as possible can be separated from the semiconductor light emitting device 150, there is no limitation on the movement form of the first magnet 407.

[0159] As described above, as each of the multiple first magnets 407 moves in a prescribed form, the multiple semiconductor light emitting devices 150 managed by each of the multiple first magnets 407 collide with each other, so that foreign matter including magnetic foreign matter and non-magnetic foreign matter can be separated from each of the multiple semiconductor light emitting devices 407 150.

[0160] When the foreign matter is separated from the semiconductor light emitting device 150, each of the plurality of first magnets 407 moves at a high speed in one direction, thereby separating the non-magnetic foreign matter from the magnetic foreign matter and the semiconductor light emitting device 150 (S5).

[0161] As each of the plurality of first magnets 407 moves in a predetermined form, the plurality of semiconductor light emitting devices 150 managed by each of the plurality of first magnets 407 can also move in a predetermined form. In the case where the plurality of first magnets 407 move at high speed in one direction while the plurality of semiconductor light emitting devices 150 are moving in a predetermined form, the magnetic foreign matter or the semiconductor light emitting device 150 can move at high speed in the moving direction of the first magnet 407. However, non-magnetic foreign matter is not pulled by the first magnet 407, and therefore can stay in place without moving in the moving direction of the first magnet 407.

[0162] For example, each of the plurality of first magnets 407 may be moved at high speed in a straight line direction from the first module 410 toward the second module 420. Here, high speed may refer to a speed at which the magnetic foreign matter or the semiconductor light emitting device 150 is affected by the magnetic force of the first magnet 407 even when the first magnet 407 moves at high speed and can move along the moving direction of the first magnet 407. In addition, high-speed movement may refer to a speed at which the non-magnetic foreign matter does not have time to catch up with the first magnet 407, considering the possibility that the non-magnetic foreign matter moves along the first magnet 407.

[0163] The semiconductor light emitting device 150 may include a magnetic layer formed of a magnetic substance, but is not limited thereto. Therefore, even if the first magnet 407 moves at a high speed, the semiconductor light emitting device 150 may move along the first magnet 407 .

[0164] The magnetic foreign matter and the plurality of semiconductor light emitting devices 150 moved along with the first magnet 407 moving at a high speed may move to the second module 420 .

[0165] In the second module 420, the magnetic foreign matter and the plurality of semiconductor light emitting devices 150 can be managed by the plurality of second magnets 428. That is, the magnetic foreign matter and the plurality of semiconductor light emitting devices 150 can be moved by the plurality of second magnets 428. To this end, the plurality of first magnets 407 move in a manner that is separated from the magnetic foreign matter and the plurality of semiconductor light emitting devices 150 by a predetermined distance or more, so that the magnetic foreign matter and the plurality of semiconductor light emitting devices 150 can be not affected by the magnetic force of the plurality of first magnets 407. The plurality of second magnets 428 move in a manner that is within a predetermined distance from the magnetic foreign matter and the plurality of semiconductor light emitting devices 150, so that the magnetic foreign matter and the plurality of semiconductor light emitting devices 150 can be affected by the magnetic force of the plurality of second magnets 428.

[0166] The non-magnetic foreign matter remaining in the first module 410 can be removed by the removal unit. For example, the removal unit can be the lower substrate 403 or the first fluid, but is not limited thereto. For example, the non-magnetic substance can be removed by the discharge of the first fluid. Therefore, the first module 410 can be a member for filtering the non-magnetic foreign matter among the foreign matter of the plurality of semiconductor light emitting devices 150.

[0167] On the other hand, the second module 420 may be a member that filters magnetic foreign matter among foreign matter of the plurality of semiconductor light emitting devices 150 .

[0168] The second module 420 may be provided with a capture substrate ( Fig.11 For example, the capture substrate 427 may capture magnetic foreign matter without capturing the semiconductor light emitting device 150.

[0169] For example, as the plurality of second magnets 428 move, the magnetic foreign matter and the plurality of semiconductor light emitting devices 150 may move in the second module 420. As described above, among the moving magnetic foreign matter and the plurality of semiconductor light emitting devices 150, the magnetic foreign matter may be captured by the capture substrate 427.

[0170] The plurality of semiconductor light emitting devices 150 not captured by the capture substrate 427 may be recovered (S7). Therefore, foreign matter including magnetic foreign matter and non-magnetic foreign matter may not be present in the semiconductor light emitting devices 150 recovered as described above. For example, the semiconductor light emitting devices 150 recovered as described above may be cleaned using at least one cleaning process, but are not limited thereto.

[0171] The semiconductor light emitting device 150 for removing foreign matter can be used as follows: Figure 8 The illustrated assembly device 500 is assembled to a display, thereby preventing lighting failure, electrical short circuit failure, brightness reduction, and the like.

[0172] On the other hand, the magnetic foreign matter captured in the capture substrate 427 can be removed. The capture substrate 427 from which the magnetic foreign matter is removed can be used again after performing a cleaning process. The capture substrate 427 can be attached to and detached from the second module 420. Therefore, in order to capture the magnetic foreign matter, it can be attached to the second module 420, and in order to remove the captured magnetic foreign matter, the capture substrate 427 can be separated from the second module 420.

[0173] Fig.10 1 is a plan view showing the foreign matter removal device according to the first embodiment. Fig.11 is along Fig.10 Cross-sectional view taken along line AB.

[0174] Reference Fig.10 and Fig.11 The foreign matter removal device 400A of the first embodiment may include a first module 410 and a second module 420. The foreign matter removal device 400A of the first embodiment may be as follows Fig. 9 The foreign matter removing device 400A of the first embodiment may include a transfer portion 430 .

[0175] The first module 410 may include a first bath 401 and a first separation portion 406. The first module 410 may include more components than this. The first bath 401 may be referred to as a chamber, a container, or the like.

[0176] The first bath 401 may contain a first fluid 405 containing a plurality of semiconductor light emitting devices 150. The first fluid 405 may be water such as ultrapure water, but is not limited thereto.

[0177] The first separation unit 406 may separate non-magnetic foreign matter from magnetic foreign matter and the plurality of semiconductor light emitting devices 150 among the foreign matter of the plurality of semiconductor light emitting devices 150 accommodated in the first bath 401. For example, the first separation unit 406 may include a first magnetic assembly including a plurality of first magnets 407. The first magnets 407 may be permanent magnets, but are not limited thereto.

[0178] The first separation unit 406 may be disposed on the first bath 401 , that is, on the upper substrate 404 , so as to be capable of x-axis, y-axis, and z-axis driving.

[0179] The first bath 401 may include a cover 402 and substrates 403 and 404. For example, the cover 402 may constitute a side portion of the first bath 401. For example, the substrate may include a lower substrate 403 disposed on the lower side of the cover 402 and an upper substrate 404 disposed on the upper side of the cover 402. Each of the lower substrate 403 and the upper substrate 404 can be loaded and unloaded. A sealing member such as an O-ring may be provided on the cover 402 to prevent leakage of the first fluid 405.

[0180] The lower substrate 403 may be a substrate for removing or recovering non-magnetic foreign matter from foreign matter attached or adsorbed to the semiconductor light emitting device 150. For example, in the case where the first fluid 405 is discharged from the first bath 401, non-magnetic foreign matter separated from the plurality of semiconductors may be disposed on the lower substrate 403. In this case, the non-magnetic foreign matter disposed on the lower substrate 403 may be removed by separating the lower substrate 403 from the cover 402.

[0181] The upper substrate 404 can prevent the plurality of first magnets 407 from contacting the first fluid 405. In addition, the upper substrate 404 can prevent the plurality of semiconductor light emitting devices 150 or magnetic foreign matter from being attached to the plurality of first magnets 407 from the plurality of first magnets 407. That is, the plurality of semiconductor light emitting devices 150 or magnetic foreign matter can move from the first fluid 405 toward the plurality of first magnets 407 and be located on the bottom surface of the upper substrate 404.

[0182] The first separation unit 406 can separate the foreign matter from the plurality of semiconductor light emitting devices 150 for the first time by rotating the plurality of semiconductor light emitting devices 150 contained in the first fluid 405. For example, the first separation unit 406 can move the magnetic foreign matter and the plurality of semiconductor light emitting devices 150 among the separated foreign matter in one direction, thereby separating the magnetic foreign matter and the plurality of semiconductor light emitting devices 150 from the non-magnetic foreign matter among the separated foreign matter for the second time.

[0183] For example, each of the plurality of first magnets 407 of the first separation portion 406 can separate the plurality of semiconductor light emitting devices 150 from the supply portion ( Figure 8 413) moves toward the first module 410.

[0184] In the first module 410, each of the plurality of first magnets 407 is first rotated and moved in a predetermined form, so that the plurality of semiconductor light emitting devices 150 affected by the magnetic force of each of the plurality of first magnets 407 can collide with each other. Through this collision, foreign matter, that is, magnetic foreign matter and non-magnetic foreign matter, can be separated from each of the semiconductor light emitting devices 150. This separation can be the first separation.

[0185] Among the foreign matter separated as described above, the non-magnetic foreign matter is not affected by the magnetic force of each of the multiple first magnets 407, and therefore moves randomly in the first fluid 405, while the multiple semiconductor light-emitting devices 150 and the magnetic foreign matter among the separated foreign matter are affected by the magnetic force of each of the multiple first magnets 407, and thus can move toward the upward direction and be located on the bottom surface of the upper substrate 404.

[0186] If the foreign matter is separated from the semiconductor light emitting device 150 for the first time by the collision with the plurality of semiconductor light emitting devices 150, each of the plurality of first magnets 407 can move at high speed in one direction. For example, each of the plurality of first magnets 407 can move at high speed toward the transfer part 430, but is not limited thereto. Thus, the non-magnetic foreign matter that is not affected by the magnetic force of each of the plurality of first magnets 407 moves randomly in the first fluid 405 regardless of the high-speed movement of each of the plurality of first magnets 407, but the plurality of semiconductor light emitting devices 150 and the magnetic foreign matter that are located on the bottom surface of the upper substrate 404 under the influence of the magnetic force of each of the plurality of first magnets 407 can move along the respective moving directions of the plurality of first magnets 407.

[0187] The transfer part 430 may be disposed between the first module 410 and the second module 420. For example, the transfer part 430 may be disposed inside the first module 410. The transfer part 430 may separate the first fluid 405 and the second fluid 422.

[0188] The transfer part 430 may include a cover body 431 and a tray 432. The cover body 431 may constitute a lower side and a side of the transfer part 430.

[0189] For example, the cover 431 may be included in the first bath 401 to constitute a part of the first bath 401. That is, the first bath 401 may be constituted by the cover 402 and the lower substrate 403 of the first bath 401 and the cover 431 of the transfer unit 430.

[0190] The figure shows that there is no partition between the lower substrate 403 of the first bath 401 and the cover 431 of the transfer part 430, but a partition may be provided. In the case where there is no partition, the first fluid 405 of the first bath 401 may also be filled on the tray 432 of the transfer part 430. In the case where there is a partition, due to the partition, the first fluid 405 may be filled only in the first bath 401, and not on the tray 432 of the transfer part 430. In this case, in order to move the tray 432 to the lower substrate 403 of the first bath 401, an opening and closing port may be provided on the partition. In the case where the opening and closing port is open, the tray 432 may be moved from the cover 431 of the transfer part 430 to the lower substrate 403 of the first bath 401 through the opening and closing port, and the opening and closing port may be closed when the tray 432 is located on the cover 431 of the transfer part 430.

[0191] The tray 432 may be disposed on the cover 431 located at the lower side. The tray 432 is usually disposed on the cover 431, and when the plurality of first magnets 407 move at a high speed, the tray 432 may move from the cover 431 to the lower substrate 403. For example, the tray 432 may reciprocate between the cover 431 and the lower substrate 403. The magnetic foreign matter and the plurality of semiconductor light emitting devices 150 moved by the plurality of first magnets 407 moving at a high speed may be recovered by the tray 432 moved to the lower substrate 403.

[0192] To this end, a placement portion 433 may be formed on the tray 432. The placement portion 433 may have an arc shape that is recessed inwardly, but is not limited thereto. The magnetic foreign matter and the plurality of semiconductor light emitting devices 150 are placed in the placement portion 433 of the tray 432, so that the magnetic foreign matter and the plurality of semiconductor light emitting devices 150 can be recovered. The magnetic foreign matter and the plurality of semiconductor light emitting devices 150 recovered by the tray 432 can be transferred to the second module 420. That is, after the tray 432 is lifted, the second module 420 is rotated 180 degrees, so that the magnetic foreign matter and the plurality of semiconductor light emitting devices 150 recovered to the placement portion 433 of the tray 432 can be put into the second fluid 422 of the second module 420.

[0193] On the other hand, although not shown, the second module 420 may be omitted when a magnet is coated on the surface of the seating portion 433 of the tray 432. In this case, the magnetic field strength of the magnet may be such that when the tray 432 is turned over, i.e., rotated 180 degrees, the magnetic foreign matter is fixed so as not to fall downward, and the semiconductor light emitting device 150 is not fixed so as not to fall downward.

[0194] In this case, the tray 432 for recovering the magnetic foreign matter and the plurality of semiconductor light emitting devices 150 is moved to a recovery box (not shown) and rotated 180 degrees, so that the magnetic foreign matter can be fixed to the placement portion 433 of the tray 432, and only the plurality of semiconductor light emitting devices 150 falls and is recovered to the recovery box.

[0195] At this time, in the case where a portion of the magnetic foreign matter is recovered to the recovery box, the magnetic foreign matter recovered to the recovery box and the plurality of semiconductor light emitting devices 150 are put into the second module 420, so that the magnetic foreign matter can be filtered.

[0196] On the other hand, the second module 420 may include a second bath 421 and a second separation part 425 .

[0197] The second bath 421 may be composed of a cover 423. The cover 431 disposed on the side of the transfer unit 430 may be a part of the cover 423 of the second bath 421, but is not limited thereto.

[0198] The cover 423 may be filled with a second fluid 422 . The magnetic foreign matter and the plurality of semiconductor light emitting devices 150 collected by the tray 432 may be accommodated in the second fluid 422 .

[0199] The second separation unit 425 may thirdly separate the magnetic foreign matter from the plurality of semiconductor light emitting devices 150 among the magnetic foreign matter and the plurality of semiconductor light emitting devices 150 accommodated in the second bath 421 .

[0200] The second separation part 425 may include a magnetic assembly 426 and a capture substrate 427. The magnetic assembly 426 may include a plurality of second magnets 428.

[0201] The magnetic assembly 426 can reciprocate along the first direction x at the lower part of the first module 410 and the second module 420. In particular, the magnetic assembly 426 can be operated when filtering non-magnetic foreign matter in the second module 420. For example, generally, the magnetic assembly 426 can be located at the lower part of the first module 410. For example, when filtering non-magnetic foreign matter in the second module 420, the magnetic assembly 426 can move from the lower part of the first module 410 to the lower part of the second module 420, i.e., the lower part of the capture substrate 427.

[0202] The magnetic foreign matter and the plurality of semiconductor light emitting devices 150 dropped into the second fluid 422 of the second bath 421 may be managed by the plurality of second magnets 428 of the magnetic assembly 426. That is, as the plurality of second magnets 428 of the magnetic assembly 426 move, the plurality of semiconductor light emitting devices 150 may move.

[0203] The capture substrate 427 may be a member for capturing magnetic foreign matter.

[0204] The capture substrate 427 can be loaded and unloaded on the lower side of the second bath 421, that is, the cover 423 and reused. For example, after the capture substrate 427 is set on the lower side of the cover 423, the second fluid 422 can be filled into the second bath 421. A sealing member such as an O-ring can be provided on the cover 423 to prevent the second fluid 422 from leaking.

[0205] like Fig.14 and Fig.15 As shown, the capture substrate 427 may include a substrate 510 , first and second capture wirings 521 and 522 , a first insulating layer 530 , a partition wall 540 , and a second insulating layer 550 .

[0206] For example, the substrate 510, the first trap wiring 521 and the second trap wiring 522, and the partition wall 540 are Figure 6 The illustrated substrate 200, assembly lines 201, 202 and partition walls 206 are identical.

[0207] For example, the first insulating layer 530 may be made of an organic substance or an inorganic substance.

[0208] For example, the second insulating layer 550 may be made of an inorganic substance. For example, the second insulating layer 550 may include SiOx, SiNx, SiCx, Al2Ox, etc. The second insulating layer 550 may be a protective layer or a capping layer for preventing the partition wall 540 from being etched by an organic cleaning solution.

[0209] On the other hand, the partition wall 540 may include a plurality of capture holes 545. The plurality of capture holes 545 may be formed on the first capture wiring 521 and the second capture wiring 522 along the first direction x. For example, the diameter D2 of the capture hole 545 may be smaller than the diameter of the semiconductor light emitting device 150 ( Fig.13 For example, the assembly hole ( Fig.12 and Fig.13 The capture hole 345) can be named as the first hole, and the capture hole 545 can be named as the second hole, but they can also be named vice versa.

[0210] The capture hole 545 may have various shapes such as a circle and an ellipse.

[0211] The magnetic foreign matter and the plurality of semiconductor light emitting devices 150 placed in the second module 420 may move along with the movement of the plurality of second magnets 428 of the magnetic assembly 426. For example, the plurality of second magnets 428 may move in a zigzag pattern, but is not limited thereto.

[0212] On the other hand, voltage is applied to the first capture wiring 521 and the second capture wiring 522 of the capture substrate 427, thereby forming a dielectrophoretic force between the first capture wiring 521 and the second capture wiring 522. Due to the dielectrophoretic force, the magnetic foreign matter and the semiconductor light emitting device 150 near the capture hole 545 can be pulled. In this case, since the diameter D2 of the capture hole 545 is smaller than the diameter of the semiconductor light emitting device 150 ( Fig.13 Therefore, the semiconductor light emitting device 150 cannot be captured in the capture hole 545, and only magnetic foreign matter can be captured. That is, the magnetic foreign matter can be attached to the bottom, inner side, etc. of the capture hole 545. In the case where there are many magnetic foreign matter in the second fluid 422, the magnetic foreign matter may accumulate in the capture hole 545.

[0213] The voltage applied to the first capture wiring 521 and the second capture wiring 522 may be different from the voltage applied to the first group of assembly wires 321 and the second group of assembly wires 322. The voltage applied to the first capture wiring 521 and the second capture wiring 521, 522 and the voltage applied to the first group of assembly wires 321 and the second group of assembly wires 322 may be an AC voltage. For example, the voltage applied to the first capture wiring 521 and the second capture wiring 522 may be different in frequency and amplitude from the voltage applied to the first group of assembly wires 321 and the second group of assembly wires 322.

[0214] In the case where the magnetic foreign matter is captured by the capture substrate 427, the capture substrate 427 can be separated after the second fluid 422 is discharged from the second bath 421. The magnetic foreign matter captured by the separated capture substrate 427 can be removed by an additional process. Then, after the capture substrate 427 is cleaned with an organic cleaning solution, the capture substrate 427 can be set again to the lower side of the second module 420, i.e., the second bath 421, and used again.

[0215] Figures 16 to 23 A foreign matter removing process according to the embodiment is shown.

[0216] like Fig.16 As shown, a plurality of semiconductor light emitting devices 150 may be supplied to a first fluid 405 of a first bath 401 of a first module 410 .

[0217] As an example, Fig. 9 As shown, each of the plurality of first magnets 407 of the supply part 413 may move the plurality of semiconductor light emitting devices 150 toward the first fluid 405 of the first bath 401 of the first module 410 .

[0218] As another example, the plurality of semiconductor light emitting devices 150 may be directly placed into the first fluid 405 of the first bath 401 of the first module 410 .

[0219] For example, as the plurality of semiconductor light emitting devices 150 move within the first fluid 405 , foreign matter attached or adsorbed to the plurality of semiconductor light emitting devices 150 is separated from the plurality of semiconductor light emitting devices 150 and may be dispersed within the first fluid 405 .

[0220] Although not shown, foreign matter firmly attached or adsorbed to the plurality of semiconductor light emitting devices 150 may remain attached or adsorbed to the plurality of semiconductor light emitting devices 150 .

[0221] like Fig.17 As shown, each of the plurality of first magnets 407 moves in a prescribed form, thereby managing each of the plurality of first magnets 407, that is, the plurality of semiconductor light emitting devices 150 affected by the magnetic force of each of the plurality of first magnets 407 can also move in a prescribed form. For example, each of the plurality of first magnets 407 can periodically rotate and move in a clockwise direction and a counterclockwise direction, but is not limited thereto. As a result, the plurality of semiconductor light emitting devices 150 can collide with each other. By shortening the rotation movement period in the clockwise direction and the counterclockwise direction, the semiconductor light emitting devices 150 can collide with each other more forcefully.

[0222] As the plurality of semiconductor light emitting devices 150 collide with each other, foreign matter including the non-magnetic foreign matter 501 and the magnetic foreign matter 502 may be separated from each of the plurality of semiconductor light emitting devices 150 and dispersed in the first fluid 405. At this time, the non-magnetic foreign matter 501 moves randomly in the first fluid 405 because it is not affected by the magnetic force of each of the plurality of first magnets 407, but the magnetic foreign matter 502 is affected by the magnetic force of each of the plurality of first magnets 407, and thus may move along the moving direction of each of the plurality of first magnets 407 together with the plurality of semiconductor light emitting devices 150. That is, as each of the plurality of first magnets 407 moves in a prescribed form, the magnetic foreign matter 502 may also move along the prescribed form together with the plurality of semiconductor light emitting devices 150. For example, when each of the plurality of first magnets 407 is rotationally moved, the plurality of semiconductor light emitting devices 150 and the magnetic foreign matter 502 may also be rotationally moved.

[0223] On the other hand, when the plurality of semiconductor light emitting devices 150 are directly placed in the first fluid 405 of the first bath 401 of the first module 410, the plurality of first magnets 407 arranged in a row along the second direction y in advance on the first bath 401 move downward, so that they can be located near the top surface of the upper substrate 404. For example, when the plurality of first magnets 407 do not move downward, the magnetic force of the plurality of first magnets 407 does not affect the plurality of semiconductor light emitting devices 150 in the first fluid 405. For example, when the plurality of first magnets 407 move downward and are located near the top surface of the upper substrate 404, the plurality of semiconductor light emitting devices 150 are affected by each of the plurality of first magnets 407 and move toward the plurality of first magnets 407, so that they can be located on the bottom surface of the upper substrate 404 or near it. In this state, when each of the multiple first magnets 407 moves in a specified form, the multiple semiconductor light-emitting devices 150 located on the bottom surface of the upper substrate 404 or in the vicinity thereof also move in a specified form, so that the multiple semiconductor light-emitting devices 150 collide with each other, and foreign objects 501, 502 can be separated from each of the multiple semiconductor light-emitting devices 407 150.

[0224] like Fig.18a and Fig.18b As shown, when the non-magnetic foreign matter 501 and the magnetic foreign matter 502 are separated from the plurality of semiconductor light emitting devices 150, each of the plurality of first magnets 407 can move along the first direction x. In this case, the plurality of semiconductor light emitting devices 150 and the magnetic foreign matter 502 affected by the magnetic force of each of the plurality of first magnets 407 move along the respective moving directions x of the plurality of first magnets 407, and the non-magnetic foreign matter 501 not affected by the magnetic force of each of the plurality of first magnets 407 can be dispersed in the first fluid 405.

[0225] Each of the plurality of first magnets 407 can move from the first location of the first fluid 405 to the second location. The first location of the first fluid 405 can be a location where each of the plurality of magnets moves in a predetermined form and the non-magnetic foreign matter 501 and the magnetic foreign matter 502 are separated from the plurality of semiconductor light emitting devices 150. The second location of the first fluid 405 can be a location where only the first fluid 405 exists, and the plurality of semiconductor light emitting devices 150, the non-magnetic foreign matter 501, and the magnetic foreign matter 502 do not exist. Therefore, as each of the plurality of magnets moves from the first location of the first fluid 405 to the second location, the magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 move to the second location, and can be separated from the non-magnetic foreign matter 501 located at the first location.

[0226] On the other hand, the tray 432 of the transfer part 430 may be moved to the second location of the first fluid 405 when or before each of the plurality of magnets moves from the first location of the first fluid 405 to the second location. That is, the tray 432 of the transfer part 430 may be moved from the cover 431 to the lower substrate 403 of the first module 410. At this time, the tray 432 may stop at the lower substrate 403 of the first module 410 corresponding to the second location of the first fluid 405. In this case, as each of the plurality of magnets moves from the first location of the first fluid 405 to the second location, the magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 moved to the second location may be located on the tray 432.

[0227] like Fig.18b As shown, as the multiple second magnets 428 move upward from the bottom of the lower substrate 403 corresponding to the second location of the first fluid 405 and are located on the bottom surface or near it of the lower substrate 403, the magnetic force of each of the multiple second magnets 428 can affect the second location of the first fluid 405 on the tray 432.

[0228] like Fig.19 As shown, as the plurality of first magnets 407 move upward, the magnetic force of the plurality of first magnets 407 may no longer affect the magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150. However, the magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 are affected by the magnetic force of the plurality of second magnets 428 located on the bottom surface of the lower substrate 403 or in the vicinity thereof and move downward and are placed in the placement portion 433 of the tray 432, so that the magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 can be recovered.

[0229] like Fig. 20As shown, when the magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 are recovered, the tray 432 can be moved again to the initial position, that is, the cover 431 of the transfer unit 430 .

[0230] The plurality of second magnets 428 may move to the second module 420 after moving in the lower direction.

[0231] like Fig.21 As shown, when the tray 432 moves to the cover 431 of the transfer part 430, the tray 432 is transferred to the second module 420, and the magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 placed in the placement part 433 of the tray 432 can be placed in the second fluid 422 of the first bath 401 of the second module 420. For example, while the tray 432 reciprocates along the second direction y of the second fluid 422, the magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 are placed in the second fluid 422, so that the magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 can be placed uniformly along the second direction y.

[0232] For example, the plurality of magnets moved to the second module 420 may be arranged in a row along the second direction y below the capture substrate 427 in the second module 420 .

[0233] like Fig.22a and Figure 22b As shown, each of the plurality of magnets may be moved in an upward direction and positioned at or near the bottom surface of the capture substrate 427. In this case, the magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 may be affected by the magnetic force of each of the plurality of magnets.

[0234] On the other hand, a voltage is applied to the first trapping wiring 521 and the second trapping wiring 522 of the trapping substrate 427 , so that a dielectrophoretic force may be formed between the first trapping wiring 521 and the second trapping wiring 522 .

[0235] As each of the plurality of magnets moves, for example, in a zigzag pattern below the capture substrate 427, the magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 can move in a zigzag pattern on the capture substrate 427 within the second fluid 422. As described above, the moving magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 are pulled by the dielectrophoretic force formed on the capture substrate 427, and can be captured in the capture hole 545.

[0236] like Fig.14 and Fig.15As shown, since the diameter D2 of the capture hole 545 is smaller than the diameter D11 of the semiconductor light emitting device 150, the magnetic foreign matter 502 having a smaller diameter than the diameter D11 of the semiconductor light emitting device 150 is captured in the capture hole 545, but the semiconductor light emitting device 150 may not be captured in (or inserted into) the capture hole 545. Therefore, only the magnetic foreign matter 502 is captured in the capture substrate 427, and the plurality of semiconductor light emitting devices 150 may be moved on the capture substrate 427 by the plurality of second magnets 428. That is, the magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 may be separated by the capture substrate 427.

[0237] like Fig.23 As shown, each of the plurality of second magnets 428 moves downward, so that the plurality of semiconductor light emitting devices 150 moving on the capture substrate 427 are no longer affected by the magnetic force of each of the plurality of magnets, and can be dispersed in the second fluid 422. The magnetic foreign matter 502 captured on the capture substrate 427 can be continuously kept in a captured state by the dielectrophoretic force.

[0238] Then, an additional recovery device such as a mesh grid can be used to recover the plurality of semiconductor light emitting devices 150 dispersed in the second fluid 422. Then, after the second fluid 422 is discharged, the capture substrate 427 is separated from the cover 423, so that the magnetic foreign matter 502 captured by the capture substrate 427 can be removed. The capture substrate 427 with the magnetic foreign matter 502 removed can be reused after being cleaned through a cleaning process.

[0239] On the other hand, the non-magnetic foreign matter 501 remaining in the first fluid 405 can be removed when the first fluid 405 is discharged. In addition, after the first fluid 405 is discharged and the lower substrate 403 is separated from the cover 402, the non-magnetic foreign matter 501 remaining on the lower substrate 403 can be removed. The lower substrate 403 can be reused after being cleaned through a cleaning process.

[0240] Fig.24 1 is a plan view showing a foreign matter removal device according to a second embodiment. Fig.25 is along Fig.24 Cross-sectional view taken along line AB.

[0241] The second embodiment is the same as the first embodiment except that the transmitting portion 430 is omitted.

[0242] Reference Fig.24 and Fig.25 The display manufacturing apparatus 400B of the second embodiment may include a first module 410 and a second module 420. The foreign matter removal apparatus 400B of the second embodiment may be as follows Fig. 9A supply portion 413 is included as shown, but it may be omitted.

[0243] Unlike the first embodiment, the second embodiment may omit the transfer part 430. In this case, the first bath 401 of the first module 410 and the second bath 421 of the second module 420 may be integrated. That is, the first bath 401 of the first module 410 and the second bath 421 of the second module 420 may be connected to each other. The first fluid 405 of the first module 410 and the second fluid 422 of the second module 420 may be integrated. That is, the first fluid 405 of the first module 410 and the second fluid 422 of the second module 420 are the same. That is, the first fluid 405 flowing into the first bath 401 may move to the second bath 421 and become the second fluid 422.

[0244] The display manufacturing device 400B of the second embodiment may include: a side portion consisting of a cover body 402 of a first module 410 and a cover body 423 of a second module 420 , a lower portion consisting of a lower substrate 403 of the first module 410 and a capture substrate 427 of the second module 420 , and an upper side consisting of an upper substrate 404 of the first module 410 .

[0245] For example, the lower substrate 403 and the capture substrate 427 are attachable and detachable.

[0246] When the lower side is formed, the side of the capture substrate 427 may be sealed by being inserted into the side of the lower substrate 403 of the first module 410 and the side of the cover 423 of the second module 420, but the invention is not limited thereto. Alternatively, it may be sealed by an O-ring.

[0247] The first magnetic assembly 406 including a plurality of first magnets 407 is located on the upper substrate 404 and can reciprocate along a first direction x. The plurality of first magnets 407 can move in a predetermined shape, such as a linear shape.

[0248] The second magnetic assembly 426 is located below the lower substrate 403 of the first module 410 and the capture substrate 427 of the second module 420, and can reciprocate along the first direction x. For example, the second magnetic assembly 426 can include a plurality of second magnets 428. The plurality of second magnets 428 can move in a zigzag pattern in the second module 420.

[0249] The following is a description of the foreign matter removal process. Figures 16 to 23 It is easy to understand from the relevant instructions.

[0250] The plurality of semiconductor light emitting devices 150 are supplied to the first fluid 405, and the plurality of first magnets 407 move in the downward direction, so that each of the plurality of first magnets 407 can manage the plurality of semiconductor light emitting devices 150. That is, the plurality of semiconductor light emitting devices 150 can move along the movement direction of each of the plurality of first magnets 407.

[0251] First, each of the plurality of first magnets 407 can be linearly moved, for example. That is, each of the plurality of first magnets 407 periodically moves linearly in a clockwise direction and a counterclockwise direction, whereby the plurality of semiconductor light emitting devices 150 collide with each other, so that the non-magnetic foreign matter 501 and the magnetic foreign matter 502 can be separated from the plurality of semiconductor light emitting devices 150.

[0252] Next, as each of the plurality of first magnets 407 moves from the first location to the second location of the first fluid 405, the magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 affected by the magnetic force of each of the plurality of first magnets 407 can move to the second location of the first fluid 405. The non-magnetic foreign matter 501 is not affected by the magnetic force of each of the plurality of first magnets 407, and thus remains in the first location of the first fluid 405.

[0253] Then, each of the multiple second magnets 428 moves to the second location of the first fluid 405 and moves upward toward the lower substrate 403, and each of the multiple first magnets 407 moves upward from the upper substrate 404, so that the magnetic foreign matter 502 and the multiple semiconductor light-emitting devices 150 moved to the second location of the first fluid 405 can be affected by the magnetic force of each of the multiple second magnets 428.

[0254] Next, each of the plurality of second magnets 428 moves to the second module 420 and moves in a zigzag direction, and a dielectrophoretic force may be formed between the first capture wiring 521 and the second capture wiring 522 due to the voltage applied to the capture substrate 427 provided on the second module 420. The magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 may move on the capture substrate 427 of the second module 420 along the respective moving directions of the plurality of second magnets 428. Among the moving magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150, the magnetic foreign matter 502 is captured by the dielectrophoretic force to the capture hole 545 of the capture substrate 427, but since the diameter D11 of the plurality of semiconductor light emitting devices 150 is larger than the diameter D2 of the capture hole 545, the magnetic foreign matter 502 may move on the capture substrate 427 without being captured by the capture hole 545. Therefore, through the capture substrate 427, the magnetic foreign matter 502 and the plurality of semiconductor light emitting devices 150 can be separated.

[0255] Next, the plurality of semiconductor light emitting devices 150 dispersed in the second fluid 422 are recovered, and the capture substrate 427 is separated after the second fluid 422 is discharged, so that the magnetic foreign matter 502 captured in the capture substrate 427 can be removed. The capture substrate 427 with the magnetic foreign matter 502 removed can be reused after cleaning.

[0256] On the other hand, the non-magnetic foreign matter 501 dispersed in the first fluid 405 can be removed by draining the first fluid 405. In the case where a part of the non-magnetic foreign matter 501 remains on the lower substrate 403, after separating the lower substrate 403, the non-magnetic foreign matter 501 remaining on the lower substrate 403 can be removed. The lower substrate 403 from which the non-magnetic foreign matter 501 has been removed can be reused after cleaning.

[0257] According to the second embodiment, the transfer part 430 of the first embodiment is omitted, so that the structure is simple and the process time can be shortened.

[0258] The above detailed description should be understood as exemplary and should not be interpreted as limiting in all aspects. The scope of the embodiment should be determined by reasonable interpretation of the attached claims, and all changes within the equivalent scope of the embodiment are included in the scope of the embodiment.

[0259] Industrial Applicability

[0260] The embodiments may be applied to the display field for displaying images or information.

[0261] The embodiment can be applied to the display field that uses a semiconductor light emitting device to display images or information. The semiconductor light emitting device can be a micron-scale semiconductor light emitting device or a nano-scale semiconductor light emitting device.

Claims

1. A display manufacturing device, wherein: include: A foreign matter removal device for removing foreign matter from a plurality of semiconductor light emitting devices; as well as An assembling device is used to assemble the plurality of semiconductor light emitting devices with foreign matter removed onto a display substrate. The foreign matter includes magnetic foreign matter and non-magnetic foreign matter. The foreign body removal device comprises: A first module filters the non-magnetic foreign matter among the foreign matter in the plurality of semiconductor light emitting devices; and The second module filters the magnetic foreign matter from the foreign matter in the plurality of semiconductor light emitting devices. The first module includes: A first bath tank containing a first fluid to accommodate a plurality of the semiconductor light emitting devices; and a first separation unit for separating the non-magnetic foreign matter from the magnetic foreign matter and the plurality of semiconductor light emitting devices among the foreign matter of the plurality of semiconductor light emitting devices contained in the first bath; The first separation unit includes a first magnetic assembly having a plurality of magnets, The second module includes: a second bath containing a second fluid to accommodate the moved magnetic foreign matter and the plurality of semiconductor light emitting devices; and a second separation unit for separating the magnetic foreign matter from the plurality of semiconductor light emitting devices contained in the second bath, The second separation unit comprises: A second magnetic assembly includes a plurality of magnets for moving the magnetic foreign matter and the plurality of semiconductor light emitting devices; and A capture substrate is used to capture the magnetic foreign matter.

2. The display manufacturing apparatus according to claim 1, wherein: The first separation unit separates the foreign matter from the plurality of semiconductor light emitting devices by rotating the plurality of semiconductor light emitting devices contained in the first fluid. The magnetic foreign matter and the plurality of semiconductor light emitting devices are separated from the non-magnetic foreign matter among the separated foreign matter by moving the magnetic foreign matter and the plurality of semiconductor light emitting devices among the separated foreign matter.

3. The display manufacturing apparatus according to claim 1, wherein: The capture substrate is disposed on the lower side of the second bath.

4. The display manufacturing apparatus according to claim 1, wherein: The capturing substrate is attached to and detached from the second bath and is reused to capture the magnetic foreign matter.

5. The display manufacturing apparatus according to claim 1, wherein: The display substrate comprises: A first set of assembly lines and a second set of assembly lines for forming a first dielectrophoretic force; and A plurality of assembly holes are arranged on the first assembly line group and the second assembly line group, and are used for assembling a plurality of the semiconductor light emitting devices.

6. The display manufacturing apparatus according to claim 5, wherein: The capture substrate comprises: a first trapping wiring and a second trapping wiring for forming a second dielectrophoretic force; and A plurality of capture holes are arranged on the first capture wiring and the second capture wiring, and are used to capture the magnetic foreign matter.

7. The display manufacturing apparatus according to claim 6, wherein: The diameter of the assembly hole is larger than the diameter of the semiconductor light emitting device. The diameter of the capture hole is smaller than the diameter of the semiconductor light emitting device.

8. The display manufacturing apparatus according to claim 7, wherein: The plurality of semiconductor light emitting devices include elliptical semiconductor light emitting devices having a major axis and a minor axis, The diameter of the assembly hole is greater than the length of the long axis of the semiconductor light emitting device. The diameter of the capture hole is smaller than the length of the short axis of the semiconductor light emitting device.

9. The display manufacturing apparatus according to claim 1, wherein: The first bathing tank and the second bathing tank are in communication with each other.

10. The display manufacturing apparatus according to claim 1, wherein: The foreign matter removing device includes a transmission portion disposed between the first module and the second module.

11. The display manufacturing apparatus according to claim 10, wherein: The transmission portion separates the first fluid from the second fluid.

12. The display manufacturing apparatus according to claim 10, wherein: The transfer unit includes a tray that transfers the moved magnetic foreign matter and the plurality of semiconductor light emitting devices to the second bath.

13. The display manufacturing apparatus according to claim 1, wherein: A removing unit for removing the non-magnetic foreign matter is included.

14. The display manufacturing apparatus according to claim 1, wherein: The foreign matter is generated during the process of manufacturing, transporting or transferring the semiconductor light emitting device.

15. The display manufacturing apparatus according to claim 1, wherein: The non-magnetic foreign matter includes metallic foreign matter and non-metallic foreign matter.

16. The display manufacturing apparatus according to claim 1, wherein: The non-magnetic foreign matter includes fragment foreign matter.

17. The display manufacturing apparatus according to claim 1, wherein: The non-magnetic foreign matter includes a pollution source flowing into the external environment.

Images