Perovskite solar cells and their fabrication methods

Abstract

This invention discloses a perovskite solar cell and its fabrication method. The fabrication method includes the following steps: fabricating a first functional layer on a conductive glass; fabricating a perovskite photoactive layer on the first functional layer, wherein the perovskite precursor solution contains a first passivating agent during the fabrication of the perovskite photoactive layer; fabricating a second functional layer on the perovskite photoactive layer, wherein the functional layer solution contains a second passivating agent during the fabrication of the second functional layer; and fabricating a metal electrode on the second functional layer. The fabrication method of the perovskite solar cell of this invention can effectively improve the interfacial bonding ability between perovskite and the electron transport layer, effectively passivate perovskite interface defects, reduce carrier loss between perovskite and the electron transport layer, and is beneficial to promoting C 60 Application of materials in the commercialization of perovskite solar cells.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and in particular to a perovskite solar cell and its preparation method. Background Technology

[0002] In the field of photovoltaic technology, perovskite crystals have demonstrated strong competitiveness due to their excellent photoelectric properties and ease of solution preparation. Since their initial report, the photoelectric conversion efficiency of metal halide perovskite solar cells has increased rapidly. In inverted perovskite single-junction or tandem cells, C0 is typically used. 60 As an electron transport layer, this is mainly due to C 60 It possesses high electron mobility and charge extraction capability, and can be deposited on the perovskite surface via thermal evaporation without damaging the perovskite. However, C 60 The weak interfacial bonding between the device and the perovskite results in high carrier loss, which leads to poor device performance and stability. Summary of the Invention

[0003] Therefore, it is necessary to provide a method for fabricating perovskite solar cells. The method for fabricating perovskite solar cells of the present invention can effectively improve the interfacial bonding ability between perovskite and the electron transport layer, effectively passivate perovskite interface defects, reduce carrier loss between perovskite and the electron transport layer, and is beneficial to promoting C… 60 Application of materials in the commercialization of perovskite solar cells.

[0004] One embodiment of this application provides a method for fabricating a perovskite solar cell.

[0005] A method for fabricating a perovskite solar cell includes the following steps:

[0006] A first functional layer is fabricated on conductive glass;

[0007] A perovskite photoactive layer is prepared on the first functional layer, wherein the perovskite precursor solution contains a first passivating agent when preparing the perovskite photoactive layer.

[0008] A second functional layer is prepared on the perovskite photoactive layer, wherein the functional layer solution contains a second passivating agent during the preparation of the second functional layer.

[0009] A metal electrode is fabricated on the second functional layer.

[0010] In some embodiments, before fabricating the first functional layer on the conductive glass, the conductive glass is cleaned. The cleaning process specifically includes the following steps:

[0011] The conductive glass was cleaned by ultrasonic cleaning with ITO cleaner, deionized water, acetone and isopropanol in sequence for at least 15 minutes.

[0012] In some embodiments, the second passivating agent is an organic ammonium salt passivating agent, and the second passivating agent includes, but is not limited to, PDAI2 and EDAI2.

[0013] In some embodiments, the first functional layer is a hole transport layer, comprising [2-(9H-carbazole-9-yl)ethyl]phosphonic acid and its derivatives, [2-(9H-carbazole-9-yl)butyl]phosphonic acid and its derivatives, 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, polyethylene terephthalate, a polymer of 3-hexylthiophene, PEDOT:PSS, and NiO. x And one or more of CuSCN.

[0014] In some embodiments, the second functional layer is an electron transport layer, and the second functional layer includes PCBM, SnO2, ZnO2, Al2O3, and C. 60 And one or more of ICBA.

[0015] In some embodiments, the method for preparing the first functional layer includes at least one of a one-step spin coating method and a coating method.

[0016] In some embodiments, the thickness of the first functional layer is 0.1 nm to 5 nm.

[0017] In some embodiments, the method for preparing the second functional layer includes at least one of spin coating, slot coating, blade coating, and evaporation.

[0018] In some embodiments, the total thickness of the second functional layer is 5nm to 20nm.

[0019] In some embodiments, the perovskite photoactive layer comprises a formal single-junction perovskite solar cell, an inverted single-junction perovskite solar cell, a perovskite / perovskite tandem solar cell, a perovskite / crystalline silicon tandem solar cell, or a perovskite / CIGS tandem solar cell.

[0020] In some embodiments, the perovskite material composition of the perovskite precursor solution is ABX3, wherein A is a monovalent cation, including but not limited to one or a mixture of several monovalent cations such as cesium (Cs), rubidium (Rb), methylamino (CH3NH3), and formamidinyl (CH2(NH2)2); B is a divalent cation, including but not limited to one or a mixture of several divalent cations such as lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca); and X is a monovalent anion, including but not limited to one or a mixture of several monovalent anions such as iodine (I), bromine (Br), chloride (Cl), fluorine (F), and thiocyanate (SCN).

[0021] In some embodiments, the preparation method for the perovskite photoactive layer includes one or more of spin coating, blade coating, vapor deposition, printing, spraying, spray pyrolysis, and slot coating.

[0022] In some embodiments, the thickness of the perovskite photoactive layer is 10 nm to 100 μm, and the band gap of the perovskite photoactive layer is 0.9 eV to 3.0 eV.

[0023] In some embodiments, the metal electrode is prepared by thermal evaporation, and / or the thickness of the metal electrode is 130 nm to 200 nm.

[0024] In some embodiments, the method for fabricating the perovskite solar cell further includes the following steps: after fabricating the second functional layer, fabricating a hole blocking layer on the fabricated second functional layer, and fabricating the metal electrode on the hole blocking layer.

[0025] In some embodiments, the barrier layer is prepared by thermal evaporation, and / or the thickness of the barrier layer is 6 nm to 8 nm.

[0026] In some embodiments, the method for fabricating the perovskite solar cell further includes the following step: preparing NiO on the conductive glass before preparing the first functional layer. x Nanoparticle layer, then in the NiO x The first functional layer is prepared on the nanoparticle layer, wherein the NiO x The nanoparticle layer is combined with the first functional layer.

[0027] In some embodiments, NiO is prepared on conductive glass. x The nanoparticle layer is formed using magnetron sputtering, and / or, the NiO... x The thickness of the nanoparticle layer is 10nm~18nm.

[0028] An embodiment of this application also provides a perovskite solar cell.

[0029] A perovskite solar cell is obtained using the above-described method for preparing perovskite solar cells.

[0030] The perovskite solar cell fabrication method of the present invention can effectively improve the interfacial bonding ability between perovskite and the electron transport layer, effectively passivate perovskite interface defects, reduce carrier loss between perovskite and the electron transport layer, and is beneficial to promoting C 60 The material has applications in the commercialization of perovskite solar cells. Specifically, the method for preparing a perovskite solar cell of the present invention involves dissolving a highly efficient second passivating agent in a ZnO / IPA solution to perform a one-step treatment of the perovskite, simultaneously preparing an electron transport layer such as a ZnO thin film. The second passivating agent dissolved in the solution also passivates defects in the perovskite, effectively passivating perovskite interface defects and reducing the interaction between the perovskite and electron transport layers such as C. 60 This invention reduces carrier loss between cells and, simultaneously, decreases the fabrication process of solar cells, lowers their manufacturing cost, and promotes the development of C... 60 Commercialization of materials in solar cells. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings. In the following description, the same reference numerals denote the same parts.

[0033] Figure 1 This is a schematic diagram of a method for preparing a perovskite solar cell according to an embodiment of the present invention;

[0034] Figure 2 This is a schematic diagram of a perovskite solar cell structure according to an embodiment of the present invention.

[0035] Explanation of reference numerals in the attached figures

[0036] 10. Perovskite solar cells; 100. Conductive glass; 200. NiO x Nanoparticle layer; 300, first functional layer; 400, perovskite photoactive layer; 500, second functional layer; 510, C 60 Electron transport layer; 520, ZnO electron transport layer; 600, barrier layer; 700, metal electrode. Detailed Implementation

[0037] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of the present invention. However, the present invention can be practiced in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0038] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0039] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0040] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0041] In the description of this invention, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0042] In this invention, unless otherwise stated, the sum of the parts of each component in the composition may be 100 parts by weight. Unless otherwise specified, the percentages (including weight percentages) in this invention are based on the total weight of the composition. Furthermore, "wt%" in this document represents mass percentage, and "at%" represents atomic percentage.

[0043] In this document, unless otherwise stated, the reaction steps may be performed in the order described herein or not. For example, other steps may be included between reaction steps, and the order of reaction steps may be appropriately interchanged. This is something that those skilled in the art can determine based on conventional knowledge and experience. Preferably, the reaction methods described herein are performed sequentially.

[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0045] This application provides a method for fabricating a perovskite solar cell to address the problem in conventional inverted perovskite single-junction or tandem cells where the interfacial bonding between the electron transport layer and the perovskite is weak, resulting in high carrier loss and deteriorating device performance and stability. The fabrication method for the perovskite solar cell will be described below with reference to the accompanying drawings.

[0046] The fabrication method of the perovskite solar cell provided in this application is exemplary; please refer to [link to example]. Figure 1 As shown, Figure 1 This diagram illustrates a method for fabricating a perovskite solar cell according to an embodiment of this application. The method for fabricating a perovskite solar cell according to this application can be used for the fabrication of perovskite solar cells.

[0047] To more clearly illustrate the structure of the perovskite solar cell fabrication method, the following description, in conjunction with the accompanying drawings, will explain the fabrication method of the perovskite solar cell. For an example, please refer to... Figure 1 and Figure 2 As shown, Figure 1This is a schematic diagram illustrating the fabrication method of the perovskite solar cell provided in the embodiments of this application. Figure 2 This is a schematic diagram of the perovskite solar cell structure provided in the embodiments of this application.

[0048] A method for fabricating a perovskite solar cell includes the following steps:

[0049] (1) A first functional layer is prepared on conductive glass.

[0050] (2) A perovskite photoactive layer is prepared on the first functional layer, wherein the perovskite precursor solution contains a first passivating agent when preparing the perovskite photoactive layer.

[0051] (3) A second functional layer is prepared on the perovskite photoactive layer, wherein the functional layer solution contains a second passivating agent when the second functional layer is prepared.

[0052] (4) Prepare a metal electrode on the second functional layer.

[0053] In some embodiments, before fabricating the first functional layer on the conductive glass, the conductive glass is cleaned. The cleaning process specifically includes the following steps:

[0054] The conductive glass was cleaned by ultrasonic cleaning with ITO cleaner, deionized water, acetone and isopropanol in sequence for at least 15 minutes.

[0055] In some embodiments, the first passivating agent is one or more of PEAI (phenylethyl iodide ammonium chloride) and 4F-PEACl (4-fluoro-phenylethyl iodide ammonium chloride).

[0056] In some embodiments, the second passivating agent is an organic ammonium salt passivating agent, and the second passivating agent includes, but is not limited to, PDAI2 and EDAI2.

[0057] In some embodiments, the first functional layer is a hole transport layer, and the material used to prepare the first functional layer is SAM. The SAM includes [2-(9H-carbazole-9-yl)ethyl]phosphonic acid and its derivatives, [2-(9H-carbazole-9-yl)butyl]phosphonic acid and its derivatives, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, polyethylene terephthalate, a polymer of 3-hexylthiophene, PEDOT:PSS, and NiO. x And one or more of CuSCN.

[0058] In some embodiments, the second functional layer is an electron transport layer, and the second functional layer includes PCBM, SnO2, ZnO2, Al2O3, and C. 60And one or more of ICBA.

[0059] In some embodiments, the method for preparing the first functional layer includes at least one of a one-step spin coating method and a coating method.

[0060] In some embodiments, the thickness of the first functional layer is 0.1 nm to 5 nm.

[0061] In some embodiments, the method for preparing the second functional layer includes at least one of spin coating, slot coating, blade coating, and evaporation.

[0062] In some embodiments, the total thickness of the second functional layer is 5nm to 20nm.

[0063] In some embodiments, the second functional layer includes C 60 An electron transport layer and a ZnO electron transport layer, wherein the ZnO electron transport layer contains a second passivating agent. C 60 The thickness of the electron transport layer is 5nm~15nm. The thickness of the ZnO electron transport layer is 0.1nm~5nm.

[0064] In some embodiments, the perovskite photoactive layer comprises a formal single-junction perovskite solar cell, an inverted single-junction perovskite solar cell, a perovskite / perovskite tandem solar cell, a perovskite / crystalline silicon tandem solar cell, or a perovskite / CIGS tandem solar cell.

[0065] In some embodiments, the perovskite material composition of the perovskite precursor solution is ABX3, wherein A is a monovalent cation, including but not limited to one or a mixture of several monovalent cations such as cesium (Cs), rubidium (Rb), methylamino (CH3NH3), and formamidinyl (CH2(NH2)2); B is a divalent cation, including but not limited to one or a mixture of several divalent cations such as lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca); and X is a monovalent anion, including but not limited to one or a mixture of several monovalent anions such as iodine (I), bromine (Br), chloride (Cl), fluorine (F), and thiocyanate (SCN).

[0066] In some embodiments, the preparation method for the perovskite photoactive layer includes one or more of spin coating, blade coating, vapor deposition, printing, spraying, spray pyrolysis, and slot coating.

[0067] In some embodiments, the thickness of the perovskite photoactive layer is 10 nm to 100 μm, and the band gap of the perovskite photoactive layer is 0.9 eV to 3.0 eV.

[0068] In some embodiments, the metal electrode is prepared by thermal evaporation, and / or the thickness of the metal electrode is 130 nm to 200 nm.

[0069] In some embodiments, the method for fabricating the perovskite solar cell further includes the following steps: after fabricating the second functional layer, fabricating a hole-blocking layer on the second functional layer, and fabricating the metal electrode on the hole-blocking layer. The hole-blocking layer may be a hole-blocking plate (BCP).

[0070] In some embodiments, the barrier layer is prepared by thermal evaporation, and / or the thickness of the barrier layer is 6 nm to 8 nm.

[0071] In some embodiments, the method for fabricating the perovskite solar cell further includes the following step: preparing NiO on the conductive glass before preparing the first functional layer. x Nanoparticle layer, then in the NiO x The first functional layer is prepared on the nanoparticle layer, wherein the NiO x The nanoparticle layer is composited with the first functional layer. In this application, NiO prepared by solution method is introduced between the conductive glass and the hole transport layer prepared by SAM hole material. x The nanoparticle layer significantly enhances the self-assembly capability of SAM hole materials, enabling the assembly of SAM hole materials in NiO. x A large-area, uniform, and controllable hole transport layer is prepared on the nanoparticle layer, which effectively solves the problems of defect recombination and charge transport loss caused by the imperfect assembly of molecules directly on a transparent conductive substrate.

[0072] In some embodiments, NiO is prepared on conductive glass. x The nanoparticle layer is formed using magnetron sputtering, and / or, the NiO... x The thickness of the nanoparticle layer is 10nm~18nm.

[0073] In some embodiments, the conductive glass may be FTO conductive glass, ITO conductive glass, etc.

[0074] An embodiment of this application also provides a perovskite solar cell.

[0075] A perovskite solar cell is obtained using the above-described method for preparing perovskite solar cells.

[0076] Example 1

[0077] This embodiment provides a perovskite solar cell.

[0078] The perovskite solar cell in this embodiment was obtained using the perovskite solar cell fabrication method described below.

[0079] A method for fabricating a perovskite solar cell includes the following steps:

[0080] (1) Provide ITO conductive glass. Clean the ITO conductive glass by ultrasonic cleaning with ITO cleaning agent, deionized water, acetone and isopropanol for at least 15 minutes in sequence.

[0081] (2) NiO was prepared on ITO conductive glass by magnetron sputtering. x Nanoparticle layer, the NiO x The thickness of the nanoparticle layer is 10 nm to 18 nm.

[0082] (3) The NiO is coated using a one-step spin coating method. x A first functional layer is prepared on the nanoparticle layer. The thickness of the first functional layer is 0.1 nm to 5 nm. The material used to prepare the first functional layer is SAM. SAM includes [2-(9H-carbazole-9-yl)ethyl]phosphonic acid and its derivatives, [2-(9H-carbazole-9-yl)butyl]phosphonic acid and its derivatives, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, polyethylene terephthalate, polymers of 3-hexylthiophene, PEDOT:PSS, and NiO. x And one of CuSCN.

[0083] (4) A perovskite photoactive layer is prepared on the first functional layer using a one-step spin-coating method. Specifically, when preparing the perovskite photoactive layer, the perovskite material in the perovskite precursor solution has a composition of Cs. 0.05 MA 0.15 FA 0.8 Pb(I 0.75 Br 0.25 3. The perovskite precursor solution contains a first passivating agent, which is PEAI. The thickness of the perovskite photoactive layer is 10 nm to 100 μm, and the band gap of the perovskite photoactive layer is 0.9 eV to 3.0 eV.

[0084] (5) A second functional layer is prepared on the perovskite photoactive layer using a spin-coating method. The thickness of the second functional layer is 20 nm. The second functional layer includes C 60 Electron transport layer and ZnO electron transport layer.

[0085] Specifically, a ZnO electron transport layer is prepared on the perovskite photoactive layer using a spin-coating method. In preparing the ZnO electron transport layer, a ZnO / IPA solution containing the second passivating agents PDAI2 and EDAI2 is coated onto the perovskite photoactive layer to obtain the ZnO electron transport layer, which has a thickness of 5 nm.

[0086] C is then prepared on the ZnO electron transport layer using a thermal evaporation method. 60 Electron transport layer, C 60 The electron transport layer is 15 nm thick.

[0087] (6) A barrier layer BCP is prepared on the second functional layer by thermal evaporation. The thickness of the barrier layer is 6 nm to 8 nm.

[0088] (7) The metal electrode is prepared on the interface modification layer by thermal evaporation, and the thickness of the metal electrode is 130 nm to 200 nm.

[0089] Comparative Example 1

[0090] This comparative example provides a perovskite solar cell.

[0091] The perovskite solar cell in this comparative example was obtained using the perovskite solar cell fabrication method described below.

[0092] A method for preparing a perovskite solar cell is basically the same as that in Example 1, except that in step (5) of Comparative Example 1, the ZnO / IPA solution does not contain the second passivating agents PDAI2 and EDAI2 when preparing the ZnO electron transport layer of the second functional layer.

[0093] The performance of the perovskite solar cells in Example 1 and Comparative Example 1 was tested, and the test results are shown in Table 1.

[0094] Table 1

[0095]

[0096] As shown in Table 1, Example 1 contains the second passivating agents PDAI2 and EDAI2. The second passivating agents dissolved in the solution passivate the perovskite defects, effectively passivating the perovskite interface defects and reducing the perovskite-C interface defects. 60 Carrier loss between electron transport layers. In Comparative Example 1, the ZnO / IPA solution did not contain the second passivating agents PDAI2 and EDAI2 when preparing the second functional layer of the ZnO electron transport layer. Therefore, Comparative Example 1 could not effectively passivate perovskite interface defects, resulting in its fill factor FF (%) being lower than that of Example 1. Correspondingly, the battery efficiency of Comparative Example 1 was also lower than that of Example 1.

[0097] The perovskite solar cell fabrication method of the present invention can effectively improve the interfacial bonding ability between perovskite and the electron transport layer, effectively passivate perovskite interface defects, reduce carrier loss between perovskite and the electron transport layer, and is beneficial to promoting C 60The material has applications in the commercialization of perovskite solar cells. Specifically, the method for preparing a perovskite solar cell of the present invention involves dissolving a highly efficient second passivating agent in a ZnO / IPA solution to perform a one-step treatment of the perovskite. While preparing the ZnO electron transport layer, the second passivating agent dissolved in the solution simultaneously passivates defects in the perovskite, effectively passivating perovskite interface defects and reducing the adhesion between the perovskite and C. 60 This invention reduces carrier losses between electron transport layers and also decreases the fabrication process and cost of solar cells, thus promoting the development of C... 60 Commercialization of materials in solar cells.

[0098] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0099] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0100] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. A method for preparing a perovskite solar cell, characterized in that, Includes the following steps: A first functional layer is fabricated on conductive glass; A perovskite photoactive layer is prepared on the first functional layer, wherein the perovskite precursor solution contains a first passivating agent when preparing the perovskite photoactive layer. A second functional layer is prepared on the perovskite photoactive layer, wherein the functional layer solution contains a second passivating agent during the preparation of the second functional layer. A metal electrode is fabricated on the second functional layer; The first passivating agent includes one or two of PEAI and 4F-PEACl, and the second passivating agent includes one or two of PDAI2 and EDAI2. The second functional layer includes C 60 An electron transport layer and a ZnO electron transport layer, wherein the ZnO electron transport layer contains the second passivating agent, and the ZnO electron transport layer is disposed in the C 60 Between the electron transport layer and the perovskite photoactive layer, the thickness of the ZnO electron transport layer is 0.1 nm to 5 nm.

2. The method for preparing a perovskite solar cell according to claim 1, characterized in that, Before fabricating the first functional layer on the conductive glass, the conductive glass is cleaned. The cleaning process specifically includes the following steps: The conductive glass was cleaned by ultrasonic cleaning with ITO cleaner, deionized water, acetone and isopropanol in sequence for at least 15 minutes.

3. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The first functional layer is a hole transport layer, comprising [2-(9H-carbazole-9-yl)ethyl]phosphonic acid and its derivatives, [2-(9H-carbazole-9-yl)butyl]phosphonic acid and its derivatives, 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, polyethylene terephthalate, a polymer of 3-hexylthiophene, PEDOT:PSS, and NiO. x And one or more of CuSCN.

4. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The conductive glass is FTO conductive glass or ITO conductive glass.

5. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The C 60 The thickness of the electron transport layer is 5nm~15nm.

6. The method for preparing a perovskite solar cell according to any one of claims 1 to 5, characterized in that, The preparation method of the first functional layer includes at least one of spin coating and coating method.

7. The method for preparing a perovskite solar cell according to any one of claims 1 to 5, characterized in that, The thickness of the first functional layer is 0.1 nm to 5 nm.

8. The method for preparing a perovskite solar cell according to any one of claims 1 to 5, characterized in that, The preparation method of the second functional layer includes at least one of spin coating, slot coating, blade coating, and evaporation.

9. The method for preparing a perovskite solar cell according to any one of claims 1 to 5, characterized in that, The thickness of the second functional layer is 5nm~20nm.

10. The method for preparing a perovskite solar cell according to any one of claims 1 to 5, characterized in that, The perovskite photoactive layer includes an inverted single-junction perovskite solar cell, a perovskite / perovskite tandem solar cell, a perovskite / crystalline silicon tandem solar cell, or a perovskite / CIGS tandem solar cell.

11. The method for preparing a perovskite solar cell according to any one of claims 1 to 5, characterized in that, The perovskite precursor solution has the following composition: ABX3, wherein A is a monovalent cation, including one or more monovalent cation mixtures of cesium, rubidium, methylamino, and formamidinium; B is a divalent cation, including one or more divalent cation mixtures of lead, copper, zinc, gallium, tin, and calcium; and X is a monovalent anion, including one or more monovalent anion mixtures of iodine, bromine, chloride, fluorine, and thiocyanate ions.

12. The method for preparing a perovskite solar cell according to any one of claims 1 to 5, characterized in that, The preparation methods for perovskite photoactive layers include one or more of the following: spin coating, blade coating, vapor deposition, printing, spraying, spray pyrolysis, and slot coating.

13. The method for preparing a perovskite solar cell according to any one of claims 1 to 5, characterized in that, The thickness of the perovskite photoactive layer is 10 nm to 100 μm, and the band gap of the perovskite photoactive layer is 0.9 eV to 3.0 eV.

14. The method for preparing a perovskite solar cell according to any one of claims 1 to 5, characterized in that, The metal electrode is prepared by thermal evaporation, and / or the thickness of the metal electrode is 130 nm to 200 nm.

15. The method for preparing a perovskite solar cell according to any one of claims 1 to 5, characterized in that, The method for fabricating the perovskite solar cell further includes the following steps: after fabricating the second functional layer, a hole blocking layer is fabricated on the second functional layer, and the metal electrode is fabricated on the hole blocking layer.

16. The method for preparing a perovskite solar cell according to claim 15, characterized in that, The barrier layer is prepared by thermal evaporation, and / or the thickness of the barrier layer is 6 nm to 8 nm.

17. The method for preparing a perovskite solar cell according to any one of claims 1 to 5 and 16, characterized in that, The method for fabricating the perovskite solar cell further includes the following steps: before fabricating the first functional layer, NiO is prepared on the conductive glass. x Nanoparticle layer, then in the NiO x The first functional layer is prepared on the nanoparticle layer, wherein the NiO x The nanoparticle layer is combined with the first functional layer.

18. The method for preparing a perovskite solar cell according to claim 17, characterized in that, NiO prepared on conductive glass x The nanoparticle layer is formed using magnetron sputtering, and / or, the NiO... x The thickness of the nanoparticle layer is 10nm~18nm.

19. A perovskite solar cell, characterized in that, The perovskite solar cell is obtained by the preparation method according to any one of claims 1 to 18.

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