A bonding process for copper indium gallium selenide quaternary target

Abstract

The present invention relates to the technical field of target material production and processing. The present invention provides a binding process for a copper indium gallium selenide quaternary target material. The copper indium gallium selenide quaternary target material binding process provided by the present invention uses a low-melting-point indium tin alloy and a high-melting-point indium double-layer material to bind a copper backplane and a quaternary material target CIGS, effectively avoiding the influence of the residual stress generated by the high-melting-point metal on the target material during the heating process, greatly improving the stability and accuracy of the target material binding process, and effectively eliminating the possibility of the target material cracking during use; at the same time, it avoids the problem of low-melting-point metal melting during the sputtering process, which has an adverse effect on the use of the target material.

Description

Technical Field

[0001] The present invention relates to the technical field of target material production and processing, and in particular to a binding process for a copper indium gallium selenide quaternary target material. Background Art

[0002] In the field of magnetron sputtering coating, high-performance target materials are essential. The most common preparation method for target materials is to weld the required coating material to a metal backing plate using indium or indium-tin alloy, and then place the target material in the coating equipment for use.

[0003] The prior art discloses a target binding process using an indium-tin mixed material. By adopting an indium-tin mixed material with tin as the main component, the amount of indium used is reduced and the production cost is lowered. However, indium-tin alloy is a low-melting-point substance. For most sputtering conditions, when the target reaches a relatively high temperature, the indium-tin alloy will melt and flow out from between the target and the copper backing plate, which can easily cause off-target phenomenon.

[0004] Prior art discloses a method for bonding ITO targets or other ceramic targets. By using indium to bond the ITO target blank to the copper backing, the resulting ITO target or other ceramic target exhibits excellent cooling, electrical contact, and thermal conductivity. However, indium, a high-melting-point substance, generates residual stress at high temperatures during the target bonding process to the copper backing. This can lead to cracking during subsequent use, impacting the target's usability.

[0005] Based on the defects of the current target material binding, it is necessary to improve it. Summary of the Invention

[0006] In view of this, it is necessary to address the defects of current target material binding and provide a copper indium gallium selenide (CIGS) quaternary target material binding process using a low-melting-point indium tin alloy and a high-melting-point indium double-layer material. By using a low-melting-point indium tin alloy and a high-melting-point indium double-layer material to bind the copper backplane and the CIGS quaternary material target, the cracking and melting problems during the use of the target are solved. The target material binding process is simple, the raw materials are easily available, and it has a very broad development prospect.

[0007] To solve the above problems, this application adopts the following technical solutions:

[0008] The present application provides a binding process for a copper indium gallium selenide quaternary target, comprising the following steps:

[0009] heating the copper indium gallium selenide quaternary target;

[0010] Heating the copper back plate;

[0011] heating and melting the indium tin alloy, and coating the melted indium tin alloy on the surface of the heated copper indium gallium selenide quaternary target;

[0012] Heat and melt indium, and coat the melted indium on the surface of the heated copper back plate;

[0013] The indium-coated copper back plate and the indium-tin alloy-coated copper indium gallium selenide quaternary target are laminated so that the indium and the indium tin alloy are in contact, and then cooled.

[0014] In some embodiments, the heating temperature in the step of heating the CIGS quaternary target is 250-300°C.

[0015] In some embodiments, the heating temperature in the step of heating the copper back plate is 250-300°C.

[0016] In some embodiments, the heating temperature in the step of heating and melting the indium tin alloy is 230-250°C.

[0017] In some embodiments, the heating temperature in the step of heating and melting indium is 150-180°C.

[0018] In some embodiments, the chemical formula of the indium tin alloy is InSn 1-x , where x ranges from 0.1 to 0.9.

[0019] In some embodiments, the copper indium gallium selenide quaternary target is heated to 250-300° C. at a heating rate of 1-3° C. / min and kept at this temperature for 10-30 minutes.

[0020] In some embodiments, the copper back plate is heated to 250-300° C. at a heating rate of 2-4° C. / min and kept at this temperature for 15-35 minutes.

[0021] In some embodiments, the indium tin alloy is heated to 230-250° C. at a rate of 3-5° C. / min to melt the indium tin alloy.

[0022] In some embodiments, the indium is heated to 150-180° C. at a rate of 1-5° C. / min to melt the indium.

[0023] This application adopts the above technical solution, and its beneficial effects are as follows:

[0024] The binding process of the copper indium gallium selenide quaternary target provided in this application uses a double layer of low-melting-point indium tin alloy and high-melting-point indium to bind the copper backplane and the quaternary material target CIGS, effectively avoiding the influence of the residual stress generated by the high-melting-point metal on the target during the heating process, greatly improving the stability and accuracy of the target binding process, and effectively eliminating the possibility of the target cracking during use; at the same time, it avoids the problem of low-melting-point metal melting during the sputtering process, which has an adverse effect on the use of the target. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments of the present application or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0026] Figure 1 Schematic diagram of the process of binding the copper indium gallium selenide quaternary target of the present invention;

[0027] Figure 2 This is a schematic structural diagram of the copper indium gallium selenide quaternary target of the present invention. DETAILED DESCRIPTION

[0028] The following describes in detail embodiments of the present application, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be construed as limiting the present application.

[0029] In the description of this application, it should be understood that the terms "upper", "lower", "horizontal", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on this application.

[0030] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. Throughout the description of this application, "plurality" means two or more, unless otherwise specifically defined.

[0031] In order to make the objectives, technical solutions and advantages of this application more clear, this application is further described in detail with reference to the accompanying drawings and embodiments.

[0032] The present invention provides a bonding process for a copper indium gallium selenide quaternary target, such as Figure 1 As shown, the following steps are included:

[0033] S1. heating the copper indium gallium selenide quaternary target;

[0034] S2, heating the copper back plate;

[0035] S3, heating and melting the indium tin alloy, and coating the melted indium tin alloy on the surface of the heated copper indium gallium selenide quaternary target;

[0036] S4, heating and melting indium, and coating the melted indium on the surface of the heated copper back plate;

[0037] S5. Laminating the indium-coated copper back plate and the indium-tin alloy-coated copper indium gallium selenide quaternary target material so that the indium and the indium tin alloy are in contact, and cooling the target.

[0038] The binding process of the copper indium gallium selenide quaternary target of the present invention comprises the following steps: S1, placing the copper indium gallium selenide quaternary target on a heating plate for heating; S2, placing a copper back plate on a heating plate for heating; S3, placing an indium tin alloy in a heating furnace for heating and melting, and coating the melted indium tin alloy on the surface of the copper indium gallium selenide quaternary target heated in S1; S4, placing indium in a heating furnace for heating and melting, and coating the melted indium on the surface of the copper back plate heated in S2; S5, coating the copper back plate coated with indium in S4. The plate and the indium-tin alloy-coated copper-indium-gallium-selenide quaternary target in S3 are bonded together, allowing indium and indium-tin alloy to contact each other, and then cooled to complete the bonding of the copper-indium-gallium-selenide quaternary target. The indium-tin alloy coated on the surface of the copper-indium-gallium-selenide quaternary target is a low-melting-point layer, which acts as a barrier layer to prevent the residual stress generated by the high-melting-point indium at high temperatures during heating from causing cracking in the target. The indium coated on the surface of the copper backing plate is a high-melting-point layer, which prevents the low-melting-point indium-tin alloy from melting at high temperatures and flowing out from between the target and the copper backing plate, causing off-target phenomena. This invention effectively solves the problems of cracking and melting of the target during use, is suitable for target bonding, and has a simple bonding process and readily available raw materials, showing a very broad development prospect.

[0039] Specifically, refer to Figure 2As shown, melted indium 2 is coated on the surface of the copper backplate 1, and melted indium tin alloy 3 is coated on the surface of the copper indium gallium selenide quaternary target 4. Then the indium-coated copper backplate and the indium-tin alloy-coated copper indium gallium selenide quaternary target are bonded together so that indium and indium tin alloy are in contact. At this time, the indium-coated copper backplate and the indium-tin alloy-coated copper indium gallium selenide quaternary target still maintain a relatively high temperature (the temperature of the indium-coated copper backplate is basically consistent with that of the copper backplate during heating, and the temperature of the indium-tin alloy-coated copper indium gallium selenide quaternary target is basically consistent with that of the copper indium gallium selenide quaternary target during heating). After cooling, the target binding welding process is completed.

[0040] In some embodiments, the heating temperature in the step of heating the CIGS quaternary target is 250-300°C.

[0041] In some embodiments, the heating temperature in the step of heating the copper back plate is 250-300°C.

[0042] In some embodiments, the heating temperature in the step of heating and melting the indium tin alloy is 230-250°C.

[0043] In some embodiments, the heating temperature in the step of heating and melting indium is 150-180°C.

[0044] In some embodiments, the chemical formula of the indium tin alloy is InSn 1-x , where x ranges from 0.1 to 0.9.

[0045] Specifically, the molar ratio of In to Sn in the indium tin alloy used in the present invention is 1:(1-x), where x=0.1 to 0.9. The indium tin alloy is placed in a heating furnace to heat and melt, specifically: In and Sn are placed in a heating furnace to heat and melt according to a molar ratio and stirred.

[0046] In some embodiments, the copper indium gallium selenide quaternary target is heated from room temperature to 250-300° C. at a heating rate of 1-3° C. / min and kept at this temperature for 10-30 minutes.

[0047] In some embodiments, the copper back plate is heated from room temperature to 250-300° C. at a heating rate of 2-4° C. / min and kept at this temperature for 15-35 minutes.

[0048] In some embodiments, the indium tin alloy is heated from room temperature to 230-250° C. at a rate of 3-5° C. / min to melt the indium tin alloy.

[0049] In some embodiments, the indium is heated from room temperature to 150-180° C. at a rate of 1-5° C. / min to melt the indium.

[0050] The above technical solutions of the present application are described in detail below with reference to specific embodiments.

[0051] Example 1

[0052] This embodiment provides a bonding process for a copper indium gallium selenide quaternary target, comprising the following steps:

[0053] S1. Place the copper indium gallium selenide quaternary target on a heating plate, heat the copper indium gallium selenide quaternary target from room temperature to 280°C at a heating rate of 2°C / min, and keep it at this temperature for 20 minutes.

[0054] S2. Place the copper backing plate on a heating plate, heat the copper backing plate from room temperature to 280°C at a heating rate of 3°C / min, and keep it at this temperature for 20 minutes;

[0055] S3, placing the indium tin alloy in a heating furnace, heating the indium tin alloy from room temperature to 240°C at 4°C / min, and melting the indium tin alloy, and coating the melted indium tin alloy on the surface of the copper indium gallium selenide quaternary target heated in S1; wherein the chemical formula of the indium tin alloy is InSn 0.5 (i.e. the molar ratio of In to Sn in the indium tin alloy is 1:0.5);

[0056] S4, placing indium in a heating furnace, heating the indium from room temperature to 160°C at a rate of 3°C / min, and melting the indium, and coating the melted indium on the surface of the copper back plate heated in S2;

[0057] S5. Laminating the indium-coated copper back plate in S4 and the indium-tin alloy-coated copper indium gallium selenide quaternary target in S3 so that the indium and the indium tin alloy are in contact, cooling, and completing the bonding of the copper indium gallium selenide quaternary target.

[0058] It can be understood that the various technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the various technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0059] The above are merely preferred embodiments of the present application and only specifically describe the technical principles of the present application. These descriptions are intended only to explain the principles of the present application and should not be construed in any way as limiting the scope of protection of the present application. Based on the explanations herein, any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present application, as well as other specific implementations of the present application that can be conceived by those skilled in the art without inventive effort, shall be included within the scope of protection of the present application.

Claims

1. A binding process for a copper indium gallium selenide quaternary target, characterized in that: The following steps are involved: heating the copper indium gallium selenide quaternary target; Heating the copper back plate; heating and melting the indium tin alloy, and coating the melted indium tin alloy on the surface of the heated copper indium gallium selenide quaternary target; Heat and melt indium, and coat the melted indium on the surface of the heated copper back plate; The indium-coated copper back plate and the indium-tin alloy-coated copper indium gallium selenide quaternary target are laminated so that the indium and the indium tin alloy are in contact, and then cooled.

2. The bonding process of the copper indium gallium selenide quaternary target according to claim 1, characterized in that: In the step of heating the copper indium gallium selenide quaternary target, the heating temperature is 250-300°C.

3. The bonding process of the copper indium gallium selenide quaternary target according to claim 1, characterized in that: The heating temperature in the step of heating the copper back plate is 250-300°C.

4. The bonding process of the copper indium gallium selenide quaternary target according to claim 1, characterized in that: The heating temperature in the step of heating and melting the indium tin alloy is 230 to 250°C.

5. The bonding process of the copper indium gallium selenide quaternary target according to claim 1, characterized in that: The heating temperature in the step of heating and melting indium is 150 to 180°C.

6. The bonding process of the copper indium gallium selenide quaternary target according to any one of claims 1 to 5, characterized in that: The chemical formula of the indium tin alloy is InSn 1-x , where x ranges from 0.1 to 0.

9.

7. The bonding process of the copper indium gallium selenide quaternary target according to claim 2, characterized in that: The copper indium gallium selenide quaternary target is heated to 250-300° C. at a heating rate of 1-3° C. / min and kept warm for 10-30 minutes.

8. The bonding process of the copper indium gallium selenide quaternary target according to claim 3, characterized in that: The copper back plate is heated to 250-300°C at a heating rate of 2-4°C / min and kept at this temperature for 15-35 minutes.

9. The bonding process of the copper indium gallium selenide quaternary target according to claim 4, characterized in that: The indium tin alloy is heated to 230-250° C. at a rate of 3-5° C. / min and melted.

10. The bonding process of the copper indium gallium selenide quaternary target according to claim 5, characterized in that: The indium is heated to 150-180° C. at a rate of 1-5° C. / min and melted.

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