A ternary metal oxide of bismuth ion doped antimony tungstate micrometer flower and a preparation method and application thereof

Abstract

The application discloses a kind of ternary metal oxides of bismuth ion doped antimony tungstate micrantha and its preparation method and application, the lamellar microsphere structure consisting of nanosheet and nanowire, the thickness of nanosheet is between 30-40 nm, the diameter of micrantha Sb2WO6 sphere is 3-5 μm;Nanosheet and nanowire are loaded and assembled mutually to form bismuth ion doped micrantha Sb2WO6 ternary metal oxide;The preparation method of the application is simple and safe, low in cost, high in practicality, fills the blank of detecting carbon dioxide gas sensitive using tungstate, and can be applied to the detection of carbon dioxide.

Description

Technical Field

[0001] This invention belongs to the field of materials processing, specifically relating to a ternary metal oxide of antimony tungstate micro-flowers doped with bismuth ions and its preparation method. Background Technology

[0002] Metal-oxide-semiconductor (MOS) materials have attracted much attention due to their excellent gas detection performance. Compared with bulk materials, micro / nanostructured materials exhibit better gas sensing performance and adsorption characteristics, and their properties mainly depend on size, shape, and structure. Due to their small size, low cost, and low power consumption, MOS has been widely studied and applied in gas sensors. Antimony tungstate (Sb₂WO₆) is an important ternary n-type semiconductor oxide and also an important functional material with good optical and electrical properties, high hardness, and a high melting point. Sb₂WO₆ has wide applications in optics, and can be used to prepare high-refractive-index materials, such as transparent ceramics and optical glasses. Furthermore, Sb₂WO₆ can also be used to prepare electronic devices, battery materials, and catalysts. Due to its excellent performance, Sb₂WO₆ has significant application prospects in materials science and engineering, and can be used in the fabrication of gas sensors. In recent years, the preparation methods of Sb₂WO₆-based materials have mainly focused on solvothermal and microwave hydrothermal methods, which can prepare Sb₂WO₆ micro / nanostructured materials with different morphologies for the degradation of some pollutants and the enhancement of photocatalytic performance. In recent years, some researchers have used Sb₂WO₆ micro / nanomaterials as gas-sensitive materials to detect gases. However, there are few reports on improving the CO₂ gas-sensing performance of Sb₂WO₆ micro / nanomaterials through ion doping. Therefore, the preparation methods of such Sb₂WO₆ materials and the improvement of their carbon dioxide detection performance still require further research and development. Summary of the Invention

[0003] The purpose of this section is to outline some aspects of embodiments of the present invention and to briefly describe some preferred embodiments. Simplifications or omissions may be made in this section, as well as in the abstract and title of this application, to avoid obscuring the purpose of these documents; however, such simplifications or omissions should not be construed as limiting the scope of the invention.

[0004] In view of the problems existing in the above and / or prior art when using Sb2WO6 micro / nano materials for carbon dioxide gas detection, the present invention is proposed.

[0005] Therefore, the purpose of this invention is to overcome the shortcomings of the prior art and provide a ternary metal oxide of antimony tungstate microflowers doped with bismuth ions.

[0006] To solve the above-mentioned technical problems, the present invention provides the following technical solution: a ternary metal oxide with bismuth ion-doped antimony tungstate micro-flowers, comprising,

[0007] The layered microsphere structure is composed of nanosheets and nanowires, with the thickness of the nanosheets between 30 and 40 nm and the diameter of the micron-flower Sb2WO6 spheres between 3 and 5 μm.

[0008] Nanosheets and nanowires are mutually loaded and assembled to form bismuth ion-doped micro-flower Sb2WO6 ternary metal oxide.

[0009] As a preferred embodiment of the antimony tungstate microflower ternary metal oxide of the present invention, wherein the bismuth ion-doped microflower Sb2WO6 ternary metal oxide has a high specific surface area and an average pore size of 180 nm.

[0010] Another objective of this invention is to overcome the shortcomings of the prior art and provide a method for preparing bismuth ion-doped antimony tungstate micro-flowers as a ternary metal oxide, comprising the following steps:

[0011] Place antimony salt and bismuth salt in a beaker, add a measured amount of anhydrous ethanol to the beaker, and stir vigorously at room temperature for 20 min to obtain an ethanol solution of antimony salt and bismuth salt;

[0012] Place tungstate in another beaker, add a measured amount of deionized water to the other beaker, and stir vigorously at room temperature for 20 minutes to obtain an aqueous solution of tungstate.

[0013] Mix the two prepared solutions in a large beaker to obtain a mixed solution. Use a dropper to slowly add an appropriate amount of alkaline solution to the mixed solution and stir continuously for 30 minutes to allow it to react fully.

[0014] The resulting mixture was transferred to a polytetrafluoroethylene-lined stainless steel high-pressure reactor, sealed, and heated to 180°C. o The reaction was carried out at C for 24 h, and then naturally cooled to room temperature after the reaction was completed.

[0015] The product was removed from the reactor and washed several times alternately with deionized water and anhydrous ethanol to ensure that there were no obvious impurities before drying, thus obtaining bismuth ion-doped micron-shaped Sb2WO6 ternary metal oxide.

[0016] In a preferred embodiment of the method for preparing the ternary metal oxide of antimony tungstate micro-flowers doped with bismuth ions in this invention, the antimony salt is SbCl3 with a molecular weight of 228.12 and the amount of antimony salt added is 3.64992 g.

[0017] In a preferred embodiment of the method for preparing bismuth ion-doped antimony tungstate micro-flowers of the present invention, the bismuth salt is BiCl3 with a molecular weight of 315.34, the amount of bismuth salt added is 0-0.96 mmol, the amount of anhydrous ethanol added is 32 mL, and the stirring speed of the antimony salt, bismuth salt and anhydrous ethanol is 800 r / min.

[0018] As a preferred embodiment of the preparation method of bismuth ion-doped antimony tungstate micro-flowers in this invention, the tungstate is Na2WO4·2H2O with a molecular weight of 329.86, the amount of tungstate added is 2.63888g, the amount of deionized water added is 32 mL, and the stirring speed of the tungstate and deionized water is 800 r / min.

[0019] In a preferred embodiment of the method for preparing bismuth ion-doped antimony tungstate micro-flowers of the present invention, the alkaline solution is a NaOH solution with a molecular weight of 40, and the stirring speed of the mixed solution and the alkaline solution is 800 r / min.

[0020] As a preferred embodiment of the method for preparing bismuth ion-doped antimony tungstate micro-flowers of the present invention, the obtained product is washed alternately with deionized water and anhydrous ethanol several times, wherein the number of washing times is 6, and the centrifugation during washing is carried out using a low-speed benchtop centrifuge with a speed of 2500 r / min.

[0021] Another objective of this invention is to overcome the shortcomings of the prior art and provide an application of bismuth ion-doped antimony tungstate microflower ternary metal oxide in the preparation of gas-sensitive materials.

[0022] As a preferred embodiment used in this invention, it includes:

[0023] The bismuth ion-doped antimony tungstate micro-flower ternary metal oxide is added to deionized water and ground to form a paste. The paste is then uniformly coated on the outer surface of the gas sensor substrate, completely covering the platinum electrode. After drying at an appropriate temperature for 24 hours, a gas-sensitive coating is formed, resulting in a gas-sensitive sensor.

[0024] The beneficial effects of this invention are as follows: The gas-sensitive material structure of this invention has a large specific surface area and high electron mobility. The preparation method is simple, safe, low-cost, and highly practical, filling the gap in the use of tungstate for carbon dioxide gas detection. The gas sensor prepared by this invention exhibits good gas-sensing performance for low concentrations of carbon dioxide gas at room temperature and can be used in greenhouse aquaculture monitoring, industrial waste gas control, and indoor air detection. Attached Figure Description

[0025] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Wherein:

[0026] Figure 1 The image shows the morphology of micron-sized flowers of Sb2WO6 (Bi:Sb=4%) produced by a solvothermal reaction.

[0027] Figure 2 The results show the dynamic response of a solvothermal bismuth-doped micro-flower Sb2WO6 gas sensor to different concentrations of carbon dioxide (2000-10000 ppm).

[0028] Figure 3 The results show the response values ​​of a solvothermal bismuth-doped micro-flower Sb2WO6 gas sensor to different concentrations of carbon dioxide.

[0029] Figure 4 The results show the repeatability of a solvothermal bismuth-doped micro-flower Sb2WO6 (Bi:Sb=4%) gas sensor at 2000ppm carbon dioxide.

[0030] Figure 5 The linearity test results of a solvothermal bismuth-doped micro-flower Sb2WO6 gas sensor for different concentrations of carbon dioxide are shown.

[0031] Figure 6 Bandgap diagram of bismuth-doped micron-sized flowers Sb2WO6 produced by solvothermal reaction. Detailed Implementation

[0032] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the examples in the specification.

[0033] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.

[0034] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The phrase "in one embodiment" appearing in different places in this specification does not necessarily refer to the same embodiment, nor is it a single or selective embodiment that is mutually exclusive with other embodiments.

[0035] The bismuth ion-doped antimony tungstate microflower ternary metal oxide of this invention has a microstructure (e.g.) Figure 1 and Figure 2 As shown, a layered microsphere structure composed of nanosheets and nanowires is formed. The thickness of the nanosheets is between 30 and 40 nm, and the diameter of the micron-flower Sb2WO6 spheres is 3-5 μm. The nanosheets and nanowires are mutually loaded and assembled to form bismuth ion-doped micron-flower Sb2WO6 ternary metal oxide. The bismuth ion-doped micron-flower Sb2WO6 ternary metal oxide has a high specific surface area and an average pore size of 180 nm.

[0036] This gas-sensitive material has a large specific surface area, high electron mobility, a simple and safe preparation method, low cost, and high practicality, filling the gap in the detection of carbon dioxide gas response under low concentration conditions.

[0037] A method for preparing bismuth ion-doped antimony tungstate microflowers in ternary metal oxides includes the following steps:

[0038] Take 3.64992 g of SbCl3 and BiCl3 and place them in a beaker. Add a quantitative amount of anhydrous ethanol to the beaker and stir vigorously at room temperature for 20 min to obtain an ethanol solution of antimony salt and bismuth salt.

[0039] Take 2.63888 g of Na2WO4·2H2O and place it in another beaker. Add a measured amount of deionized water to the other beaker and stir vigorously at room temperature for 20 min to obtain an aqueous solution of Na2WO4.

[0040] Mix the two prepared solutions in a large beaker to obtain a mixed solution. Use a dropper to slowly add an appropriate amount of NaOH solution (the molecular weight of the NaOH used is 40). Use a pH meter to control the pH value of the solution and stir continuously for 30 minutes to allow it to react completely.

[0041] The resulting mixture was transferred to a stainless steel high-pressure reactor lined with polytetrafluoroethylene (PTFE) (100 mL capacity), sealed, and incubated at 180°C. o The reaction was carried out at C for 24 h, and then naturally cooled to room temperature after the reaction was completed.

[0042] The product was removed from the reactor and washed six times alternately with deionized water and anhydrous ethanol to ensure the absence of obvious impurities. Then, it was cooled at 70°C. o Drying at C for 12 h yielded bismuth ion-doped micron-sized Sb2WO6 ternary metal oxide semiconductor material.

[0043] Example 1

[0044] (1) Take 3.64992 g of SbCl3 and place it in a beaker. Add 32 mL of anhydrous ethanol to the beaker and stir vigorously at room temperature for 20 min to obtain an ethanol solution of antimony salt and bismuth salt.

[0045] (2) Take 2.63888 g of Na2WO4·2H2O and place it in another beaker. Add 32 mL of deionized water to the other beaker and stir vigorously at room temperature for 20 min to obtain an aqueous solution of Na2WO4.

[0046] (3) Mix the two prepared solutions in a large beaker to obtain a mixed solution. Use a dropper to slowly add an appropriate amount of NaOH solution to the mixed solution. The molecular weight of the NaOH used is 40. Use a pH meter to control the pH value of the solution and stir continuously for 30 min at a stirring speed of 800 r / min to allow it to react fully.

[0047] (4) Transfer the above-obtained mixed solution to a stainless steel high-pressure reactor with a polytetrafluoroethylene liner (liner capacity of 100 mL), seal, and heat at 180°C. o The reaction was carried out at C for 24 h, and then naturally cooled to room temperature after the reaction was completed.

[0048] (5) Remove the product from the reactor and wash it 6 times alternately with deionized water and anhydrous ethanol to ensure there are no obvious impurities. Then, heat the product at 70°C. o Drying at C for 12 h yields Sb2WO6 ternary metal oxide semiconductor material;

[0049] (6) The obtained semiconductor material is added to deionized water and ground to form a paste. The paste is then uniformly coated on the outer surface of the gas sensor substrate and completely covered with the platinum electrode. The paste is dried at an appropriate temperature for 24 h to form a gas-sensitive coating, thus obtaining a gas-sensitive sensor.

[0050] from Figure 2 As can be seen, by adjusting the flow meter to introduce carbon dioxide gas at concentrations of 2000 ppm to 10000 ppm, the gas sensor prepared from Sb2WO6 ternary metal oxide semiconductor material has a response value of 20 for 10000 ppm carbon dioxide, which is a poor response.

[0051] like Figure 6 As shown, the band gap of the solvothermal reaction-induced micron-sized flowers Sb2WO6 is 2.42 eV.

[0052] Example 2

[0053] (1) Place 3.64992 g of SbCl3 and 0.32 mmol of BiCl3 in a beaker, add 32 mL of anhydrous ethanol to the beaker, and stir vigorously at room temperature to obtain an ethanol solution of SbCl3 and BiCl3;

[0054] (2) Take 2.63888 g of Na2WO4·2H2O and place it in another beaker. Add 32 mL of deionized water to the other beaker and stir vigorously at room temperature for 20 min to obtain an aqueous solution of Na2WO4.

[0055] (3) Mix the two prepared solutions in a large beaker to obtain a mixed solution. Use a dropper to slowly add an appropriate amount of NaOH solution to the mixed solution. The molecular weight of the NaOH used is 40. Use a pH meter to control the pH value of the solution and stir continuously for 30 min at a stirring speed of 800 r / min to allow it to react fully.

[0056] (4) Transfer the above-obtained mixed solution to a stainless steel high-pressure reactor with a polytetrafluoroethylene liner (liner capacity of 100 mL), seal, and heat at 180°C. o The reaction was carried out at C for 24 h, and then naturally cooled to room temperature after the reaction was completed.

[0057] (5) Remove the product from the reactor and wash it 6 times alternately with deionized water and anhydrous ethanol to ensure there are no obvious impurities. Then, heat the product at 70°C. o Drying at C for 12 h yields a 2% Bi-Sb2WO6 ternary metal oxide semiconductor material.

[0058] (6) The obtained semiconductor material is added to deionized water and ground to form a paste. The paste is then uniformly coated on the outer surface of the gas sensor substrate and completely covered with the platinum electrode. The paste is dried at an appropriate temperature for 24 h to form a gas-sensitive coating, thus obtaining a gas-sensitive sensor.

[0059] from Figure 2 As can be seen, by adjusting the flow meter to introduce carbon dioxide gas at concentrations of 2000 ppm to 10000 ppm, the gas sensor prepared from 2% Bi-Sb2WO6 ternary metal oxide semiconductor material has a response value close to 40 for 10000 ppm carbon dioxide, indicating poor response.

[0060] like Figure 6 As shown, the band gap of the solvothermal bismuth-doped microflower Sb2WO6 is 2.26 eV.

[0061] Example 3

[0062] (1) Place 3.64992 g of SbCl3 and 0.64 mmol of BiCl3 in a beaker, add 32 mL of anhydrous ethanol to the beaker, and stir vigorously at room temperature to obtain an ethanol solution of SbCl3 and BiCl3;

[0063] (2) Take 2.63888 g of Na2WO4·2H2O and place it in another beaker. Add 32 mL of deionized water to the other beaker and stir vigorously at room temperature for 20 min to obtain an aqueous solution of Na2WO4.

[0064] (3) Mix the two prepared solutions in a large beaker to obtain a mixed solution. Use a dropper to slowly add an appropriate amount of NaOH solution to the mixed solution. The molecular weight of the NaOH used is 40. Use a pH meter to control the pH value of the solution and stir continuously for 30 min at a stirring speed of 800 r / min to allow it to react fully.

[0065] (4) Transfer the above-obtained mixed solution to a stainless steel high-pressure reactor with a polytetrafluoroethylene liner (liner capacity of 100 mL), seal, and heat at 180°C. o The reaction was carried out at C for 24 h, and then naturally cooled to room temperature after the reaction was completed.

[0066] (5) Remove the product from the reactor and wash it 6 times alternately with deionized water and anhydrous ethanol to ensure there are no obvious impurities. Then, heat the product at 70°C. o Drying at C for 12 h yielded a 4% Bi-Sb2WO6 ternary metal oxide semiconductor material.

[0067] (6) The obtained semiconductor material is added to deionized water and ground to form a paste. The paste is then uniformly coated on the outer surface of the gas sensor substrate and completely covered with the platinum electrode. The paste is dried at an appropriate temperature for 24 h to form a gas-sensitive coating, thus obtaining a gas-sensitive sensor.

[0068] like Figure 1 As shown, the 4%Bi-Sb2WO6 sample is a layered microsphere structure composed of a large number of nanosheets and nanowires. The thickness of the nanosheets is between 30-40 nm, and the diameter of the micron-sized 4%Bi-Sb2WO6 spheres is 3-5 μm. The nanosheets and nanowires are mutually loaded and assembled to form a mesoporous 4%Bi-Sb2WO6 ternary metal oxide semiconductor material.

[0069] from Figure 2 As can be seen, by adjusting the flow meter to introduce 10,000 ppm of carbon dioxide gas, the gas sensor prepared from 4% Bi-Sb2WO6 ternary metal oxide semiconductor material has a response value of over 140 for 10,000 ppm of carbon dioxide at room temperature, which is a good response.

[0070] like Figure 4 As shown, 2000 ppm of carbon dioxide gas was introduced through the flow meter. The gas sensor prepared from 4% Bi-Sb2WO6 ternary metal oxide semiconductor material showed good repeatability in detecting carbon dioxide at room temperature, with a stable response value of around 15.571.

[0071] like Figure 5 As shown, the response value of the carbon dioxide gas introduced at concentrations of 2000 ppm to 10000 ppm exhibits good linearity with the concentration of carbon dioxide introduced, demonstrating excellent prospects for practical applications.

[0072] like Figure 6 As shown, the band gap of the solvothermal bismuth-doped microflower Sb2WO6 is 2.16 eV, further confirming that bismuth doping helps to improve the gas sensing performance of the gas sensor.

[0073] Example 4

[0074] (1) Place 3.64992 g of SbCl3 and 0.96 mmol of BiCl3 in a beaker, add 32 mL of anhydrous ethanol to the beaker, and stir vigorously at room temperature to obtain an ethanol solution of SbCl3 and BiCl3;

[0075] (2) Take 2.63888 g of Na2WO4·2H2O and place it in another beaker. Add 32 mL of deionized water to the other beaker and stir vigorously at room temperature for 20 min to obtain an aqueous solution of Na2WO4.

[0076] (3) Mix the two prepared solutions in a large beaker to obtain a mixed solution. Use a dropper to slowly add an appropriate amount of NaOH solution to the mixed solution. The molecular weight of the NaOH used is 40. Use a pH meter to control the pH value of the solution and stir continuously for 30 min at a stirring speed of 800 r / min to allow it to react fully.

[0077] (4) Transfer the above-obtained mixed solution to a stainless steel high-pressure reactor with a polytetrafluoroethylene liner (liner capacity of 100 mL), seal, and heat at 180°C. o The reaction was carried out at C for 24 h, and then naturally cooled to room temperature after the reaction was completed.

[0078] (5) Remove the product from the reactor and wash it 6 times alternately with deionized water and anhydrous ethanol to ensure there are no obvious impurities. Then, heat the product at 70°C. o Drying at C for 12 h yielded a 6% Bi-Sb2WO6 ternary metal oxide semiconductor material.

[0079] (6) The obtained semiconductor material is added to deionized water and ground to form a paste. The paste is then uniformly coated on the outer surface of the gas sensor substrate and completely covered with the platinum electrode. The paste is dried at an appropriate temperature for 24 h to form a gas-sensitive coating, thus obtaining a gas-sensitive sensor.

[0080] from Figure 2 As can be seen, by adjusting the flow meter to introduce carbon dioxide gas at 2000 ppm-10000 ppm, the gas sensor prepared from 6% Bi-Sb2WO6 ternary metal oxide semiconductor material achieves a response value of 60 for 10000 ppm carbon dioxide at room temperature, which is a general response.

[0081] like Figure 6 As shown, the band gap of the solvothermal bismuth-doped microflower Sb2WO6 is 2.24 eV, further confirming that bismuth doping helps to improve the gas sensing performance of the gas sensor.

[0082] like Figure 3 As shown, carbon dioxide gas of 2000 ppm-10000 ppm was introduced by adjusting the flow meter. The bismuth-doped Sb₂WO₆ ternary metal oxide semiconductor material device showed good response to carbon dioxide at room temperature. The gas-sensitive materials with response values ​​from largest to smallest were 4%Bi-Sb₂WO₆, 6%Bi-Sb₂WO₆, 2%Bi-Sb₂WO₆, and undoped Sb₂WO₆ ternary metal oxide semiconductor material.

[0083] As can be seen from the above embodiments, the gas sensor made of 4% Bi-Sb2WO6 ternary metal oxide semiconductor material has the best response to carbon dioxide gas and can effectively detect carbon dioxide at low concentrations.

[0084] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all such modifications or substitutions should be covered within the scope of the claims of the present invention.

Claims

1. The application of a bismuth ion-doped antimony tungstate microflora ternary metal oxide in the preparation of a sensor for detecting carbon dioxide, characterized in that: The bismuth ion-doped antimony tungstate microflowers are ternary metal oxides composed of layered microspheres of nanosheets and nanowires. The thickness of the nanosheets is between 30 and 40 nm, and the diameter of the Sb2WO6 microflower spheres is 3-5 μm. Nanosheets and nanowires are mutually loaded and assembled to form bismuth ion-doped micron-flower Sb2WO6 ternary metal oxide; The method for producing bismuth ion-doped antimony tungstate microflowers of ternary metal oxide includes the following steps: Place antimony salt and bismuth salt in a beaker, add a measured amount of anhydrous ethanol to the beaker, and stir vigorously at room temperature for 20 min to obtain an ethanol solution of antimony salt and bismuth salt; Place tungstate in another beaker, add a measured amount of deionized water to the other beaker, and stir vigorously at room temperature for 20 min to obtain an aqueous solution of tungstate. Mix the two prepared solutions in a large beaker to obtain a mixed solution. Use a dropper to slowly add an appropriate amount of alkaline solution to the mixed solution and stir continuously for 30 minutes to allow it to react fully. The above-obtained mixed solution was transferred to a stainless steel high-pressure reactor lined with polytetrafluoroethylene, sealed, and reacted at 180°C for 24 h. After the reaction was completed, it was allowed to cool naturally to room temperature. The product was removed from the reactor and washed several times with deionized water and anhydrous ethanol to ensure that there were no obvious impurities before drying to obtain bismuth ion-doped micron-shaped Sb2WO6 ternary metal oxide. The antimony salt is SbCl3 with a molecular weight of 228.12, and the amount of antimony salt added is 3.64992 g. The bismuth salt is BiCl3 with a molecular weight of 315.34, and the amount of bismuth salt added is 0.64 mmol. The amount of anhydrous ethanol added is 32 mL. The stirring speed of the antimony salt, bismuth salt and anhydrous ethanol is 800 r / min. The tungstate is Na2WO4·2H2O with a molecular weight of 329.86, and the amount of tungstate added is 2.63888 g. The amount of deionized water added is 32 mL. The stirring speed of the tungstate and deionized water is 800 r / min.

2. The application according to claim 1, characterized in that: The bismuth ion-doped micron-shaped Sb₂WO₆ ternary metal oxide has a high specific surface area and an average pore size of 180 nm.

3. The application as described in claim 1, characterized in that: The alkaline solution is a NaOH solution with a molecular weight of 40. The stirring speed for mixing the solution and the alkaline solution is 800 r / min.

4. The application according to claim 1, characterized in that: The obtained product was washed several times alternately with deionized water and anhydrous ethanol, with a total of 6 washing cycles. During the washing, a low-speed benchtop centrifuge was used with a speed of 2500 r / min.

5. The application as described in claim 1, characterized in that: The process includes adding the bismuth ion-doped antimony tungstate micro-flower ternary metal oxide to deionized water and grinding it to form a paste. The paste is then uniformly coated onto the outer surface of a gas sensor substrate, completely covering the platinum electrode. The paste is then dried at an appropriate temperature for 24 hours to form a gas-sensitive coating, thus obtaining a gas-sensitive sensor.

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