A mass transfer method, a display device and a method for manufacturing the same

Abstract

This invention provides a mass transfer method, a display device, and a method for manufacturing the same. The method involves bonding the light-emitting structure to a first temporary substrate, thereby encapsulating each LED chip with a sensing material. Then, the growth substrate is removed, and a second temporary substrate with sensing material on its surface is aligned and bonded to the side of the first temporary substrate closest to the LED chip. Next, the first temporary substrate is debonded and removed, and the sensing material is removed using a peeling process to expose the surface of each LED chip. This achieves chip flipping, allowing the selective transfer of the LED chips to the display panel, thus realizing the transfer of LED chips from the wafer to the display panel.

Description

Technical Field

[0001] This invention relates to the field of light-emitting diodes, and more particularly to a mass transfer method, a display device, and a method for manufacturing the same. Background Technology

[0002] Micro-component technology refers to the high-density integration of tiny element arrays on a substrate. Currently, micro-pitch light-emitting diode (Micro LED) technology is becoming a hot research topic, and the industry anticipates high-quality micro-component products entering the market. High-quality micro-pitch LED products will have a profound impact on existing traditional display products such as LCD / OLED. Micro-LED technology, namely LED miniaturization and matrixing technology, refers to the technology of integrating a high-density, tiny LED array on a single chip to reduce the pixel pitch from millimeters to micrometers. Due to its superior performance, Micro-LED inherits the advantages of inorganic LEDs, such as high brightness, high yield, high reliability, small size, and long lifespan, and its application in the display field is becoming increasingly widespread.

[0003] In the manufacturing process of micro-components, micro-components are first formed on a donor substrate, and then transferred to a receiving substrate. The receiving substrate is, for example, a display panel. Mass transfer is a major bottleneck in the industrialization of micro-LEDs, and solving this technical challenge is crucial for reducing costs and achieving mass production of micro-LEDs.

[0004] Despite the proliferation of mass transfer technologies, stamp transfer is still the primary method used in product manufacturing. For flip-chip structures, conventional techniques involve a single bonding process to obtain a freestanding chip-on-carrier wafer with electrodes facing inwards, which requires removing residual adhesive from the electrode surfaces. This process is complex and cannot achieve direct transfer from the chip to the display panel.

[0005] In view of this, the inventor has specifically designed a mass transfer method, a display device and a method for manufacturing the same, which leads to this invention. Summary of the Invention

[0006] The purpose of this invention is to provide a mass transfer method, a display device, and a method for manufacturing the same, so as to realize the mass transfer of chips directly from the wafer end to the display panel end.

[0007] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0008] A mass transfer method, the mass transfer method comprising the following steps:

[0009] Step S01: Provide a light-emitting structure and a first temporary substrate; wherein, the light-emitting structure includes a plurality of LED chips arranged at intervals on the surface of the growth substrate, and the surface of the first temporary substrate is provided with a sensing material;

[0010] Step S02: Bond the light-emitting structure to the first temporary substrate so that the sensing material covers each of the LED chips;

[0011] Step S03: Remove the growth substrate;

[0012] Step S04: Provide a second temporary substrate, the surface of which is provided with a sensing material;

[0013] Step S05: Align and bond the second temporary substrate along the side of the first temporary substrate closest to the LED chip, so that the two are tightly bonded.

[0014] Step S06: After debonding and removing the first temporary substrate by using the sensing source corresponding to the sensing material, the sensing material is removed to expose the surface of each LED chip.

[0015] Step S07: Selectively transfer the LED chips to the display panel.

[0016] Preferably, in step S01, the thickness of the sensing material is greater than the height of the LED chip.

[0017] Preferably, the first temporary substrate and / or the second temporary substrate comprises a transparent substrate.

[0018] Preferably, the sensing material includes any one or more of the following: thermal sensing material, ultraviolet light sensing material, laser sensing material, radiation sensing material, plasma sensing material, and microwave sensing material.

[0019] Preferably, the laser sensing material includes any one or more of acrylic, polyimide, and epoxy resins.

[0020] Preferably, the transparent substrate comprises a transparent inorganic material.

[0021] Preferably, the transparent substrate comprises a glass substrate, a sapphire substrate, or a titanium oxide substrate.

[0022] Preferably, the LED chip includes an epitaxial light-emitting layer and an electrode for electrical contact, and in step S01, the electrode is disposed on the side of the LED chip facing away from the growth substrate.

[0023] Further, in step S07, the LED chip is selectively aligned to the bonding pad of the display panel, and the electrodes of the LED chip are bonded to the bonding pad by a reflow soldering process.

[0024] Preferably, in the mass transfer method described above, the LED chip includes a flip-chip LED chip; then in step S01, the LED chip includes an epitaxial light-emitting layer with a reflector on the light-emitting surface, a first electrode, and a second electrode; wherein the epitaxial light-emitting layer includes at least a first type semiconductor layer, an active layer, and a second type semiconductor layer sequentially stacked along the surface of the growth substrate, and the first electrode forms contact with the first type semiconductor layer by means of groove embedding, and the second electrode forms contact with the second type semiconductor layer; then after step S07, the sensing material remaining on the surface of the LED chip serves as an encapsulation layer.

[0025] Alternatively, in the mass transfer method described above, the LED chip includes a vertical structure LED chip; then in step S01, the epitaxial light-emitting layer includes at least a first type semiconductor layer, an active layer, and a second type semiconductor layer sequentially stacked along the surface of the growth substrate; and a second electrode is further provided on the surface of the second type semiconductor layer.

[0026] Furthermore, after removing the growth substrate in step S03, the process also includes preparing a first electrode on the side of the LED chip facing away from the second electrode;

[0027] Accordingly, after step S07, the first electrode of the LED chip on the display panel is exposed by removing the sensing material.

[0028] The present invention also provides a method for manufacturing a display device, which uses the mass transfer method described in any of the above claims to achieve mass transfer of LED chips from wafers to display panels.

[0029] The present invention also provides a display device including a plurality of pixels arranged on a display panel, wherein the pixels are formed on the display panel using the display device manufacturing method described in any of the preceding claims.

[0030] As can be seen from the above technical solution, the mass transfer method provided by the present invention involves bonding the light-emitting structure and the first temporary substrate to coat each LED chip with sensing material; then removing the growth substrate and aligning and bonding a second temporary substrate with sensing material on its surface with the side of the first temporary substrate close to the LED chip; next, after debonding and removing the first temporary substrate, removing the sensing material through a film peeling process to expose the surface of each LED chip, thus realizing chip flipping and selectively transferring the LED chips to the display panel, thereby realizing the transfer of LED chips from the wafer to the display panel.

[0031] Furthermore, the LED chip includes an epitaxial light-emitting layer and electrodes for electrical contact, and in step S01, the electrodes are disposed on the side of the LED chip facing away from the growth substrate. After steps S01 to S06, the chip is flipped so that the electrodes face outwards, thus allowing the LED chip to be selectively transferred directly to the display panel; based on this, the manufacturing process is simple and easy to mass-produce.

[0032] Based on the above scheme, further, in step S07, the LED chip is selectively aligned to the bonding pad of the display panel, and the electrodes of the LED chip are bonded to the bonding pad through a reflow soldering process. In this way, the LED chip can be directly transferred to the display panel using a mature and low-cost reflow soldering process.

[0033] Furthermore, the mass transfer method provided by this invention is compatible with both flip-chip and vertical LED chips, and has extremely high application value.

[0034] The present invention also provides a method for manufacturing a display device, which achieves the above-mentioned technical effects while being simple to operate and easy to implement.

[0035] The present invention also provides a display device formed by the above-described transfer method, which has a simple structure and is easy to operate and implement. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0037] Figures 1 to 10 This is a schematic diagram of the structure corresponding to the mass transfer method provided in Embodiment 1 of the present invention;

[0038] Figures 11 to 23 This is a schematic diagram of the structure corresponding to the mass transfer method provided in Embodiment 2 of the present invention;

[0039] Symbols in the figure: 1. Growth substrate; 2. LED chip; 3. First temporary substrate; 4. Sensing material; 5. Second temporary substrate; 6. Display panel; 7. Bonding pad; 201. Epitaxial light-emitting layer; 202. First electrode; 203. Second electrode. Detailed Implementation

[0040] To make the content of this invention clearer, the following description, in conjunction with the accompanying drawings, further illustrates the invention. This invention is not limited to this specific embodiment. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention.

[0041] Example 1

[0042] A mass transfer method, the mass transfer method comprising the following steps:

[0043] Step S01: Provide a light-emitting structure and a first temporary substrate 3; wherein, as shown in the figure... Figure 2 As shown, the light-emitting structure includes a plurality of LED chips 2 arranged at intervals on the surface of the growth substrate 1; as Figure 1 As shown, the surface of the first temporary substrate 3 is provided with a sensing material 4;

[0044] Based on the above, in this embodiment, the LED chip 2 includes an epitaxial light-emitting layer 201 and an electrode for electrical contact, and the electrode is disposed on the side of the LED chip 2 away from the growth substrate 1.

[0045] Based on the above, in the embodiments of this application, the LED chip 2 includes a flip-chip LED chip; specifically, as shown... Figure 11As shown, the LED chip 2 includes an epitaxial light-emitting layer 201 with a reflector on its light-emitting surface, a first electrode 202, and a second electrode 203. The epitaxial light-emitting layer 201 includes at least a first-type semiconductor layer, an active layer, and a second-type semiconductor layer sequentially stacked along the surface of the growth substrate 1. The first electrode 202 forms contact with the first-type semiconductor layer through a groove embedding method, and the second electrode 203 forms contact with the second-type semiconductor layer. It should be noted that the specific material types of the first-type semiconductor layer, the active region, and the second-type semiconductor layer are not limited in this embodiment. For example, the first-type semiconductor layer can be, but is not limited to, an N-GaN layer, and correspondingly, the second-type semiconductor layer can be, but is not limited to, a P-GaN layer. Furthermore, the specific positions of the first electrode 202 and the second electrode 203 are also not limited, as long as the first electrode 202 forms an ohmic contact with the first-type semiconductor layer, and the second electrode 203 forms an ohmic contact with the second-type semiconductor layer.

[0046] Based on the above, in one embodiment of this application, the sensing material 4 includes any one or more of the following: thermal sensing material 4, ultraviolet light sensing material 4, laser sensing material 4, radiation sensing material 4, plasma sensing material 4, and microwave sensing material 4.

[0047] Preferably, in one embodiment of this application, the sensing material 4 is selected from laser sensing materials that are currently technologically mature; the laser sensing material 4 includes any one or more of acrylic, polyimide, and epoxy resins.

[0048] Based on the above, in one embodiment of this application, the first temporary substrate 3 includes a transparent substrate. Preferably, the transparent substrate includes a transparent inorganic material; further, the transparent substrate includes a glass substrate, a sapphire substrate, or a titanium oxide substrate.

[0049] It is worth mentioning that the type of growth substrate 1 is not limited in this embodiment. For example, the growth substrate 1 includes any one of sapphire, silicon carbide, silicon, gallium nitride, aluminum nitride, and gallium arsenide. At the same time, the LED chip 2 only needs to meet the above basic requirements, and its specific structure and material composition are not limited in this embodiment.

[0050] Step S02, as follows Figure 3 As shown, the light-emitting structure and the first temporary substrate 3 are bonded together, so that the sensing material 4 coats each of the LED chips 2, to obtain the desired result. Figure 4 The structure shown;

[0051] It should be noted that the bonding process is not limited in this embodiment; for example, electrostatic bonding, thermal bonding, etc.

[0052] Step S03: Remove the growth substrate 1 to obtain the following... Figure 5 The structure shown;

[0053] Based on the above embodiments, in one embodiment of this application, removing the growth substrate 1 includes: removing the growth substrate 1 using a laser lift-off process. However, this application is not limited to this. In other embodiments of this application, other removal processes can also be used to remove the growth substrate 1, depending on the specific circumstances.

[0054] Step S04, as Figure 6 As shown, a second temporary substrate 5 is provided, and the surface of the second temporary substrate 5 is provided with a sensing material 4;

[0055] Based on the above, in one embodiment of this application, the second temporary substrate 5 includes a transparent substrate. Preferably, the transparent substrate includes a transparent inorganic material; further, the transparent substrate includes a glass substrate, a sapphire substrate, or a titanium oxide substrate.

[0056] Based on the above, in one embodiment of this application, the sensing material 4 includes any one or more of the following: thermal sensing material 4, ultraviolet light sensing material 4, laser sensing material 4, radiation sensing material 4, plasma sensing material 4, and microwave sensing material 4.

[0057] Preferably, in one embodiment of this application, the sensing material 4 is selected from laser sensing materials that are currently technologically mature; the laser sensing material 4 includes any one or more of acrylic, polyimide, and epoxy resins.

[0058] Step S05, as follows Figure 7 As shown, the second temporary substrate 5 is aligned and bonded along the side of the first temporary substrate 3 close to the LED chip 2, so that the two are tightly bonded.

[0059] Step S06: After debonding and removing the first temporary substrate 3 using the sensing source corresponding to the sensing material 4, the sensing material 4 is removed to expose the surface of each LED chip 2, obtaining... Figure 8 The structure shown;

[0060] Based on the above, the sensing material 4 is selected from the currently mature laser sensing material 4; then in this step, the first temporary substrate 3 can be debonded and removed by laser irradiation; the laser sensing material 4 can be removed by the film peeling process after debonding, which can ensure the cleanliness of the core surface and reduce the process time. The biggest advantage is that there are fewer restrictions on the secondary bonding material (i.e., the sensing material 4 of the second temporary substrate 5).

[0061] Step S07, as follows Figure 9As shown, the LED chip 2 is selectively transferred to the display panel 6, ultimately obtaining the following result: Figure 10 The structure shown.

[0062] Based on the above, in one embodiment of this application, the LED chip 2 is selectively aligned to the bonding pad 7 of the display panel 6, and the electrodes of the LED chip 2 are bonded to the bonding pad 7 by a reflow soldering process. After step S07, the residual sensing material 4 on the surface of the LED chip 2 serves as an encapsulation layer and does not need to be removed.

[0063] The present invention also provides a method for manufacturing a display device, which uses the mass transfer method described in any of the above claims to achieve mass transfer of LED chips from wafers to display panels.

[0064] The present invention also provides a display device including a plurality of pixels arranged on a display panel, wherein the pixels are formed on the display panel using the display device manufacturing method described in any of the preceding claims.

[0065] As can be seen from the above technical solution, the mass transfer method provided by the present invention involves bonding the light-emitting structure and the first temporary substrate 3 to cover each LED chip 2 with the sensing material 4; then removing the growth substrate 1 and aligning and bonding the second temporary substrate 5, which has the sensing material 4 on its surface, along the side of the first temporary substrate 3 close to the LED chip 2; next, after debonding and removing the first temporary substrate 3, the sensing material 4 is removed by a film peeling process to expose the surface of each LED chip 2. This achieves chip flipping, which allows the LED chip 2 to be selectively transferred to the display panel 6, thereby realizing the transfer of the LED chip 2 from the wafer to the display panel 6.

[0066] Furthermore, the LED chip 2 includes an epitaxial light-emitting layer 201 and electrodes for electrical contact, and in step S01, the electrodes are disposed on the side of the LED chip 2 facing away from the growth substrate 1. After steps S01 to S06, the chip is flipped so that the electrodes face outwards, thus allowing the LED chip 2 to be selectively transferred directly to the display panel 6; based on this, the manufacturing process is simple and easy to mass-produce.

[0067] Based on the above scheme, further, in step S07, the LED chip 2 is selectively aligned to the bonding pad 7 of the display panel 6, and the electrodes of the LED chip 2 are bonded to the bonding pad 7 through a reflow soldering process. Thus, the LED chip 2 can be directly transferred to the display panel 6 using a mature and low-cost reflow soldering process.

[0068] The present invention also provides a method for manufacturing a display device, which achieves the above-mentioned technical effects while being simple to operate and easy to implement.

[0069] The present invention also provides a display device formed by the above-described transfer method, which has a simple structure and is easy to operate and implement.

[0070] Example 2

[0071] A mass transfer method, the mass transfer method comprising the following steps:

[0072] Step S01: Provide a light-emitting structure and a first temporary substrate 3; wherein, as shown in the figure... Figure 13 As shown, the light-emitting structure includes a plurality of LED chips 2 arranged at intervals on the surface of the growth substrate 1; as Figure 12 As shown, the surface of the first temporary substrate 3 is provided with a sensing material 4;

[0073] Based on the above, in this embodiment, the LED chip 2 includes an epitaxial light-emitting layer 201 and an electrode for electrical contact, and the electrode is disposed on the side of the LED chip 2 away from the growth substrate 1.

[0074] Based on the above, in the embodiments of this application, such as Figure 23 As shown, the LED chip 2 includes a vertical structure LED chip 2; therefore, the epitaxial light-emitting layer 201 includes at least a first type semiconductor layer, an active layer, and a second type semiconductor layer sequentially stacked along the surface of the growth substrate 1; and a second electrode 203 is further provided on the surface of the second type semiconductor layer. It should be noted that the specific material types of the first type semiconductor layer, the active region, and the second type semiconductor layer are not limited in this embodiment. For example, the first type semiconductor layer can be, but is not limited to, an N-GaN layer, and correspondingly, the second type semiconductor layer can be, but is not limited to, a P-GaN layer; at the same time, the specific location of the second electrode 203 is also not limited, as long as the second electrode 203 forms an ohmic contact with the second type semiconductor layer.

[0075] Based on the above, in one embodiment of this application, the sensing material 4 includes any one or more of the following: thermal sensing material 4, ultraviolet light sensing material 4, laser sensing material 4, radiation sensing material 4, plasma sensing material 4, and microwave sensing material 4.

[0076] Preferably, in one embodiment of this application, the sensing material 4 is selected from laser sensing materials that are currently technologically mature; the laser sensing material 4 includes any one or more of acrylic, polyimide, and epoxy resins.

[0077] Based on the above, in one embodiment of this application, the first temporary substrate 3 includes a transparent substrate. Preferably, the transparent substrate includes a transparent inorganic material; further, the transparent substrate includes a glass substrate, a sapphire substrate, or a titanium oxide substrate.

[0078] It is worth mentioning that the type of growth substrate 1 is not limited in this embodiment. For example, the growth substrate 1 includes any one of sapphire, silicon carbide, silicon, gallium nitride, aluminum nitride, and gallium arsenide. At the same time, the LED chip 2 only needs to meet the above basic requirements, and its specific structure and material composition are not limited in this embodiment.

[0079] Step S02, as follows Figure 14 As shown, the light-emitting structure and the first temporary substrate 3 are bonded together, so that the sensing material 4 coats each of the LED chips 2, to obtain the desired result. Figure 15 The structure shown;

[0080] It should be noted that the bonding process is not limited in this embodiment; for example, electrostatic bonding, thermal bonding, etc.

[0081] Step S03: Remove the growth substrate 1 to obtain the following... Figure 16 The structure shown; next, a first electrode 202 is formed on the surface of the LED chip 2 facing away from the second electrode 203;

[0082] Based on the above embodiments, in one embodiment of this application, removing the growth substrate 1 includes: removing the growth substrate 1 using a laser lift-off process. However, this application is not limited to this. In other embodiments of this application, other removal processes can also be used to remove the growth substrate 1, depending on the specific circumstances.

[0083] Step S04, as Figure 17 As shown, a second temporary substrate 5 is provided, and the surface of the second temporary substrate 5 is provided with a sensing material 4;

[0084] Based on the above, in one embodiment of this application, the second temporary substrate 5 includes a transparent substrate. Preferably, the transparent substrate includes a transparent inorganic material; further, the transparent substrate includes a glass substrate, a sapphire substrate, or a titanium oxide substrate.

[0085] Based on the above, in one embodiment of this application, the sensing material 4 includes any one or more of the following: thermal sensing material 4, ultraviolet light sensing material 4, laser sensing material 4, radiation sensing material 4, plasma sensing material 4, and microwave sensing material 4.

[0086] Preferably, in one embodiment of this application, the sensing material 4 is selected from laser sensing materials that are currently technologically mature; the laser sensing material 4 includes any one or more of acrylic, polyimide, and epoxy resins.

[0087] Step S05, as follows Figure 18 As shown, the second temporary substrate 5 is aligned and bonded along the side of the first temporary substrate 3 close to the LED chip 2, so that the two are tightly bonded.

[0088] Step S06: After debonding and removing the first temporary substrate 3 using the sensing source corresponding to the sensing material 4, the sensing material 4 is removed to expose the surface of each LED chip 2, obtaining... Figure 19 The structure shown;

[0089] Based on the above, the sensing material 4 is selected from the currently mature laser sensing material 4; then in this step, the first temporary substrate 3 can be debonded and removed by laser irradiation; the laser sensing material 4 can be removed by the film peeling process after debonding, which can ensure the cleanliness of the core surface and reduce the process time. The biggest advantage is that there are fewer restrictions on the secondary bonding material (i.e., the sensing material 4 of the second temporary substrate 5).

[0090] Step S07, as follows Figure 20 As shown, the LED chip 2 is selectively transferred to the display panel 6 to obtain, as shown, Figure 21 The structure shown; then, as Figure 22 As shown, by removing the sensing material 4, the first electrode 202 of the LED chip 2 on the display panel 6 is exposed.

[0091] Based on the above, in one embodiment of this application, the second electrode 203 of the LED chip 2 is selectively aligned to the bonding pad 7 of the display panel 6, and the second electrode 203 of the LED chip 2 is bonded to the bonding pad 7 by a reflow soldering process.

[0092] Based on the above, in one embodiment of this application, removal is performed by wet cleaning and / or dry plasma process, and this application does not limit this to the above.

[0093] The present invention also provides a method for manufacturing a display device, which uses the mass transfer method described in any of the above claims to achieve mass transfer of LED chips from wafers to display panels.

[0094] The present invention also provides a display device including a plurality of pixels arranged on a display panel, wherein the pixels are formed on the display panel using the display device manufacturing method described in any of the preceding claims.

[0095] As can be seen from the above technical solution, the mass transfer method provided by the present invention involves bonding the light-emitting structure and the first temporary substrate 3 to cover each LED chip 2 with the sensing material 4; then removing the growth substrate 1 and aligning and bonding the second temporary substrate 5, which has the sensing material 4 on its surface, along the side of the first temporary substrate 3 close to the LED chip 2; next, after debonding and removing the first temporary substrate 3, the sensing material 4 is removed by a film peeling process to expose the surface of each LED chip 2. This achieves chip flipping, which allows the LED chip 2 to be selectively transferred to the display panel 6, thereby realizing the transfer of the LED chip 2 from the wafer to the display panel 6.

[0096] Furthermore, the LED chip 2 includes an epitaxial light-emitting layer 201 and electrodes for electrical contact, and in step S01, the electrodes are disposed on the side of the LED chip 2 facing away from the growth substrate 1. After steps S01 to S06, the chip is flipped so that the electrodes face outwards, thus allowing the LED chip 2 to be selectively transferred directly to the display panel 6; based on this, the manufacturing process is simple and easy to mass-produce.

[0097] Based on the above scheme, further, in step S07, the LED chip 2 is selectively aligned to the bonding pad 7 of the display panel 6, and the electrodes of the LED chip 2 are bonded to the bonding pad 7 through a reflow soldering process. Thus, the LED chip 2 can be directly transferred to the display panel 6 using a mature and low-cost reflow soldering process.

[0098] The present invention also provides a method for manufacturing a display device, which achieves the above-mentioned technical effects while being simple to operate and easy to implement.

[0099] The present invention also provides a display device formed by the above-described transfer method, which has a simple structure and is easy to operate and implement.

[0100] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0101] It should also be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or apparatus comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or apparatus that includes the aforementioned element.

[0102] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A mass transfer method, characterized in that, The mass transfer method includes the following steps: Step S01: Provide a light-emitting structure and a first temporary substrate; wherein, the light-emitting structure includes a plurality of LED chips arranged at intervals on the surface of the growth substrate, and the surface of the first temporary substrate is provided with a sensing material; Step S02: Bond the light-emitting structure to the first temporary substrate so that the sensing material covers each of the LED chips; Step S03: Remove the growth substrate; Step S04: Provide a second temporary substrate, the surface of which is provided with a sensing material; Step S05: Align and bond the second temporary substrate along the side of the first temporary substrate closest to the LED chip, so that the two are tightly bonded. Step S06: After debonding and removing the first temporary substrate by using the sensing source corresponding to the sensing material, the sensing material is removed to expose the surface of each LED chip. Step S07: Selectively transfer the LED chips to the display panel.

2. The mass transfer method according to claim 1, characterized in that, The first temporary substrate and / or the second temporary substrate includes a transparent substrate.

3. The mass transfer method according to claim 1, characterized in that, The sensing material includes any one or more of the following: thermal sensing material, ultraviolet light sensing material, laser sensing material, radiation sensing material, plasma sensing material, and microwave sensing material.

4. The mass transfer method according to claim 2, characterized in that, The transparent substrate comprises a transparent inorganic material.

5. The mass transfer method according to claim 4, characterized in that, The transparent substrate includes a glass substrate, a sapphire substrate, or a titanium oxide substrate.

6. The mass transfer method according to claim 1, characterized in that, The LED chip includes an epitaxial light-emitting layer and electrodes for electrical contact, and in step S01, the electrodes are disposed on the side of the LED chip away from the growth substrate.

7. The mass transfer method according to claim 6, characterized in that, In step S07, the LED chip is selectively aligned to the bonding pad of the display panel, and the electrodes of the LED chip are bonded to the bonding pad by a reflow soldering process.

8. The mass transfer method according to claim 6 or 7, characterized in that, The LED chip includes a flip-chip LED chip; in step S01, the LED chip includes an epitaxial light-emitting layer with a reflector on the light-emitting surface, a first electrode, and a second electrode; wherein, the epitaxial light-emitting layer includes at least a first type semiconductor layer, an active layer, and a second type semiconductor layer sequentially stacked along the surface of the growth substrate, and the first electrode forms contact with the first type semiconductor layer by means of groove embedding, and the second electrode forms contact with the second type semiconductor layer; then after step S07, the sensing material remaining on the surface of the LED chip serves as an encapsulation layer.

9. The mass transfer method according to claim 6 or 7, characterized in that, The LED chip includes a vertical structure LED chip; then in step S01, the epitaxial light-emitting layer includes at least a first type semiconductor layer, an active layer, and a second type semiconductor layer sequentially stacked along the surface of the growth substrate; and a second electrode is further provided on the surface of the second type semiconductor layer; Furthermore, after removing the growth substrate in step S03, the process also includes preparing a first electrode on the side of the LED chip facing away from the second electrode; Accordingly, after step S07, the first electrode of the LED chip on the display panel is exposed by removing the sensing material.

10. A method for manufacturing a display device, characterized in that, The mass transfer method according to any one of claims 1 to 9 is used to achieve the mass transfer of LED chips from wafers to display panels.

11. A display device comprising a plurality of pixels arranged on a display panel, characterized in that, The pixels are formed on the display panel by the display device manufacturing method of claim 10.

Images