A device and method for adjusting the uniformity of an ion beam etch

Abstract

The application provides a kind of ion beam etching uniformity adjusting device and method, by uniformity adjusting capacitor component and the uniformity adjusting coil component of installation in the preset position of discharge cavity, the power adjustment of plane coil and / or cylindrical coil in the uniformity adjusting coil component is realized, finally realizes the adjustment of plasma density distribution in the discharge cavity, and further optimization (for example, make plane coil and / or cylindrical coil to be non-centrosymmetric arrangement or to be centrosymmetric arrangement) to the arrangement of plane coil and / or cylindrical coil in installation position can also be carried out, further accurate re-optimization adjustment to the plasma density distribution in the discharge cavity can also be carried out, to achieve the expected plasma density distribution in the discharge cavity, so as to realize the uniformity adjustment of ion beam etching.

Description

Technical Field

[0001] This invention relates to the field of semiconductor process technology, and more specifically, to a device and method for adjusting the uniformity of ion beam etching. Background Technology

[0002] A lenticular lens is a precision optical element with a spatial periodic structure. It can be freely colored, is odorless, tasteless, and non-toxic, and has advantages such as rigidity, insulation, and good printability. By utilizing the principle of light diffraction to decompose polychromatic light, it realizes the conversion of the phase and amplitude of the photographed object. The human brain processes several images from different angles through the visual difference between the two eyes to form an image with depth. It is widely used in indoor advertising light boxes in hotels, shopping malls, stadiums, airport terminals, waiting halls, etc., as well as in wedding photography studios, portrait photography, and decorative paintings.

[0003] In existing technologies, in the manufacturing of integrated circuit chips, symmetrical toothed gratings can be fabricated by photoresist lithography, which exposes the photoresist and then etches away the parts to be removed. These gratings can be shaped into right-angled, chamfered, or beveled types. However, symmetrical gratings produce poor 3D imaging. To improve the 3D imaging effect, a beveled toothed grating has been developed. The structure of the beveled toothed grating is as follows: Figure 1 As shown, Figure 1 This is a schematic diagram of the oblique tooth grating.

[0004] Further reference Figure 2 , Figure 2 for Figure 1 A schematic diagram of the etching process of a helical tooth grating. The helical tooth grating is mainly achieved by reactive ion beam etching based on a mask. That is, reactive gases such as CHF3 / CHF4 are introduced into the discharge cavity. The reactive gases are ionized to generate plasma. After the plasma is extracted through the optical grating, it forms an ion beam with a certain direction and energy. This ion beam has the functions of physical bombardment and chemical reaction. On the one hand, the directional movement of ions and the physical sputtering effect make the etched pattern have the highest resolution and anisotropy. On the other hand, the chemical reaction of ions can ensure a large selectivity.

[0005] First, a mask is pre-prepared on the material surface. This mask creates local open and closed regions for the ion beam. When the ion beam is perpendicular to the grating substrate, the etched grating cross-section is rectangular or trapezoidal; when the ion beam is oblique to the grating substrate, the etched grating is... Figure 2 The oblique tooth grating shown.

[0006] However, since the fabrication process of the oblique tooth grating requires that the ion beam and the grating substrate be at a certain angle, and the stage supporting the grating substrate cannot rotate, the area near the ion beam is etched faster, while the area away from the ion beam is etched slower, resulting in an overall strip-like distribution. This is especially important when the area of ​​the grating substrate to be etched increases, as the control of etching uniformity becomes particularly crucial.

[0007] Therefore, how to provide a technique that can adjust the uniformity of ion beam etching is a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0008] In view of this, to solve the above problems, the present invention provides a device and method for adjusting the uniformity of ion beam etching, the technical solution of which is as follows:

[0009] A uniformity adjustment device for ion beam etching, the uniformity adjustment device comprising: an RF power supply, a power matching network, a uniformity adjustment capacitor assembly, a uniformity adjustment coil assembly, and a discharge cavity, wherein the uniformity adjustment coil assembly includes a planar coil and a cylindrical coil, a first end of the cylindrical coil being connected to a first output terminal of the uniformity adjustment capacitor assembly, and a first end of the planar coil being connected to a second output terminal of the uniformity adjustment capacitor assembly; the planar coil is located at the bottom of the discharge cavity, and the cylindrical coil is wound around the outer wall of the discharge cavity;

[0010] The radio frequency power supply is used to generate a first operating voltage to control the generation of plasma in the discharge cavity;

[0011] The power matching network is used to regulate the output of the radio frequency power supply;

[0012] The uniformity adjustment capacitor assembly is used to adjust the power on the planar coil and / or the cylindrical coil by adjusting its own capacitance value, so as to adjust the plasma density distribution in the discharge cavity.

[0013] Preferably, in the above-mentioned uniformity adjustment device, the power matching network includes: a first adjustable capacitor, a first inductor coil, and a first capacitor;

[0014] The first end of the first inductor coil is connected to the first end of the first adjustable capacitor, and the connection node is connected to the output terminal of the radio frequency power supply.

[0015] The second terminal of the first adjustable capacitor is grounded;

[0016] The second end of the first inductor is connected to the first end of the first capacitor, and the second end of the first capacitor serves as the output terminal of the power matching network.

[0017] Preferably, in the above-mentioned uniformity adjustment device, the uniformity adjustment capacitor assembly includes: a second adjustable capacitor and a third adjustable capacitor;

[0018] The first end of the second adjustable capacitor and the first end of the third adjustable capacitor are connected, and the connection node is connected to the output terminal of the power matching network.

[0019] The second terminal of the second adjustable capacitor serves as the first output terminal of the uniformity adjustment capacitor assembly.

[0020] The second terminal of the third adjustable capacitor serves as the second output terminal of the uniformity adjustment capacitor assembly.

[0021] Preferably, in the above-mentioned uniformity adjustment device, the capacitance value of the second adjustable capacitor is in the range of 0pF-250pF.

[0022] Preferably, in the above-mentioned uniformity adjustment device, the capacitance value of the third adjustable capacitor is in the range of 0pF-250pF.

[0023] Preferably, in the above-mentioned uniformity adjustment device, the uniformity adjustment device further includes: a second capacitor and a third capacitor;

[0024] The second end of the planar coil is grounded through the second capacitor;

[0025] The second end of the cylindrical coil is grounded through the third capacitor.

[0026] Preferably, in the above-mentioned uniformity adjustment device, the planar coils are arranged in a non-centrally symmetrical manner at the bottom of the discharge cavity.

[0027] Preferably, in the above-mentioned uniformity adjustment device, the planar coils are arranged in a centrally symmetrical manner at the bottom of the discharge cavity.

[0028] Preferably, in the above-mentioned uniformity adjustment device, the cylindrical coils are arranged in a non-centrally symmetrical manner on the outer wall of the discharge cavity.

[0029] Preferably, in the above-mentioned uniformity adjustment device, the cylindrical coils are arranged in a centrally symmetrical manner on the outer wall of the discharge cavity.

[0030] Preferably, in the above-described uniformity adjustment device, the uniformity adjustment device further includes: an optical grating system;

[0031] The optical grating system is used to extract the plasma generated in the discharge cavity.

[0032] Preferably, in the above-described uniformity adjustment device, the optical grating system includes: a grating;

[0033] The grid is located at the outlet of the discharge cavity. The grid includes a screen grid and an acceleration grid, with the screen grid located between the acceleration grid and the outlet of the discharge cavity.

[0034] Preferably, in the above-mentioned uniformity adjustment device, the optical grating system further includes: a first power supply and a second power supply;

[0035] The first power supply is connected to the screen grid;

[0036] The second power supply is connected to the acceleration grid.

[0037] Preferably, in the above-mentioned uniformity adjustment device, the optical grating system further includes: a first filter and a second filter;

[0038] The first power supply is connected to the screen grid through the first filter;

[0039] The second power supply is connected to the acceleration grid through the second filter.

[0040] Preferably, in the above-mentioned uniformity adjustment device, the first filter includes: a fourth capacitor and a second inductor coil;

[0041] The first end of the fourth capacitor is connected to the first end of the second inductor coil, and the connection node is connected to the output terminal of the first power supply.

[0042] The second end of the second inductor coil is connected to the screen grid.

[0043] The second terminal of the fourth capacitor is grounded.

[0044] Preferably, in the above-mentioned uniformity adjustment device, the second filter includes: a fifth capacitor and a third inductor coil;

[0045] The first end of the fifth capacitor is connected to the first end of the third inductor, and the connection node is connected to the output terminal of the second power supply.

[0046] The second end of the third inductor coil is connected to the acceleration grid.

[0047] The second terminal of the fifth capacitor is grounded.

[0048] A method for adjusting the uniformity of ion beam etching, the method being based on the uniformity adjustment device described in any one of the preceding claims, the method comprising:

[0049] The radio frequency power supply is controlled to generate a first operating voltage, which is used to control the generation of plasma in the discharge cavity;

[0050] The power matching network is used to regulate the output of the radio frequency power supply.

[0051] The capacitance value of the uniformity adjustment capacitor assembly is adjusted to regulate the power on the planar coil and / or the cylindrical coil, thereby adjusting the plasma density distribution within the discharge cavity.

[0052] Preferably, in the above-described uniformity adjustment method, the uniformity adjustment capacitor assembly includes: a second adjustable capacitor and a third adjustable capacitor;

[0053] The first terminal of the second adjustable capacitor and the first terminal of the third adjustable capacitor are connected, and the connection node is connected to the output terminal of the power matching network; the second terminal of the second adjustable capacitor serves as the first output terminal of the uniformity adjustment capacitor assembly; the second terminal of the third adjustable capacitor serves as the second output terminal of the uniformity adjustment capacitor assembly.

[0054] The adjustment of the capacitance value of the uniformity adjustment capacitor assembly to adjust the power on the planar coil and / or the cylindrical coil, thereby adjusting the plasma density distribution within the discharge cavity, includes:

[0055] Adjusting the capacitance value of the second adjustable capacitor and / or adjusting the capacitance value of the third adjustable capacitor respectively adjusts the power on the planar coil and / or the cylindrical coil, thereby adjusting the plasma density distribution in the discharge cavity.

[0056] Preferably, in the above uniformity adjustment method, the capacitance value of the second adjustable capacitor is in the range of 0pF-250pF.

[0057] Preferably, in the above uniformity adjustment method, the capacitance value of the third adjustable capacitor is in the range of 0pF-250pF.

[0058] Compared with the prior art, the beneficial effects achieved by the present invention are as follows:

[0059] The present invention provides a uniformity adjustment device for ion beam etching, comprising: a radio frequency power supply, a power matching network, a uniformity adjustment capacitor assembly, a uniformity adjustment coil assembly, and a discharge cavity. The uniformity adjustment coil assembly includes a planar coil and a cylindrical coil. A first end of the cylindrical coil is connected to a first output end of the uniformity adjustment capacitor assembly, and a first end of the planar coil is connected to a second output end of the uniformity adjustment capacitor assembly. The planar coil is located at the bottom of the discharge cavity, and the cylindrical coil is wound around the outer wall of the discharge cavity. The radio frequency power supply is used to generate a first operating voltage to control the generation of plasma within the discharge cavity. The power matching network is used to adjust the output of the radio frequency power supply. The uniformity adjustment capacitor assembly is used to adjust the power on the planar coil and / or the cylindrical coil by adjusting its own capacitance value, thereby adjusting the plasma density distribution within the discharge cavity.

[0060] This ion beam etching uniformity adjustment device, through a uniformity adjustment capacitor assembly and a uniformity adjustment coil assembly installed at a preset position in the discharge cavity, adjusts the power of the planar coils and / or cylindrical coils in the uniformity adjustment coil assembly, ultimately adjusting the plasma density distribution within the discharge cavity. Furthermore, it can further optimize the arrangement of the planar coils and / or cylindrical coils at their installation positions (e.g., arranging them non-centrosymmetric or centrosymmetrically), and can further precisely optimize and adjust the plasma density distribution within the discharge cavity to achieve the desired plasma density distribution, thereby realizing uniformity adjustment in ion beam etching, especially effective for etching oblique tooth gratings. Attached Figure Description

[0061] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0062] Figure 1 This is a schematic diagram of the structure of a helical toothed grating;

[0063] Figure 2 for Figure 1 Schematic diagram of the etching process of a helical toothed grating;

[0064] Figure 3 A schematic diagram of the principle structure of an ion beam etching uniformity adjustment device provided in an embodiment of the present invention;

[0065] Figure 4This is a schematic diagram of the structure of a cylindrical coil provided in an embodiment of the present invention;

[0066] Figure 5 A schematic diagram of a planar coil provided in an embodiment of the present invention;

[0067] Figure 6 A schematic diagram of the arrangement of planar coils and cylindrical coils on a discharge cavity is provided for an embodiment of the present invention;

[0068] Figure 7 This is a schematic diagram illustrating another arrangement of planar coils and cylindrical coils on a discharge cavity, provided as an embodiment of the present invention.

[0069] Figure 8 This is a schematic diagram illustrating the arrangement of planar coils and cylindrical coils on a discharge cavity, as provided in an embodiment of the present invention.

[0070] Figure 9 This is a schematic diagram illustrating the arrangement of planar coils and cylindrical coils on a discharge cavity, as provided in an embodiment of the present invention.

[0071] Figure 10 This is a schematic diagram illustrating the arrangement of planar coils and cylindrical coils on a discharge cavity, as provided in an embodiment of the present invention.

[0072] Figure 11 This is a flowchart illustrating a method for adjusting the uniformity of ion beam etching, as provided in an embodiment of the present invention. Detailed Implementation

[0073] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0074] Based on the background art, this invention provides an ion beam etching uniformity adjustment device and method. Through a uniformity adjustment capacitor assembly and a uniformity adjustment coil assembly installed at a preset position in the discharge cavity, the power on the planar coil and / or cylindrical coil in the uniformity adjustment coil assembly is adjusted, ultimately achieving adjustment of the plasma density distribution within the discharge cavity. Furthermore, the arrangement of the planar coil and / or cylindrical coil at the installation position can be further optimized (e.g., making the planar coil and / or cylindrical coil arranged non-centrosymmetrically or centrosymmetrically). The plasma density distribution within the discharge cavity can be further precisely optimized and adjusted to achieve the desired plasma density distribution within the discharge cavity. The plasma is then extracted through an optical grating system, thereby achieving uniformity adjustment of the ion beam etching, with particularly significant effects on the etching of oblique tooth gratings.

[0075] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0076] refer to Figure 3 , Figure 3 This is a schematic diagram of the principle structure of an ion beam etching uniformity adjustment device provided in an embodiment of the present invention; see reference. Figure 4 , Figure 4 This is a schematic diagram of a cylindrical coil provided in an embodiment of the present invention; see reference. Figure 5 , Figure 5 This is a schematic diagram of a planar coil structure provided in an embodiment of the present invention. The uniformity adjustment device for ion beam etching includes: a radio frequency power supply RF1, a power matching network 11, a uniformity adjustment capacitor assembly 12, a uniformity adjustment coil assembly, and a discharge cavity 15. The uniformity adjustment coil assembly includes a planar coil 13 and a cylindrical coil 14. The first end of the cylindrical coil 14 is connected to the first output end of the uniformity adjustment capacitor assembly 12, and the first end of the planar coil 13 is connected to the second output end of the uniformity adjustment capacitor assembly 12. The planar coil 13 is located at the bottom of the discharge cavity 15, and the cylindrical coil 14 is wound around the outer wall of the discharge cavity 15.

[0077] The radio frequency power supply RF1 is used to generate a first operating voltage to control the generation of plasma in the discharge cavity 15.

[0078] The power matching network 11 is used to regulate the output of the radio frequency power supply RF1.

[0079] The uniformity adjustment capacitor assembly 12 is used to adjust the power on the planar coil 13 and / or the cylindrical coil 14 by adjusting its own capacitance value, so as to adjust the plasma density distribution in the discharge cavity 15.

[0080] Specifically, in this embodiment of the invention, the radio frequency power supply RF1, the power matching network 11, the uniformity adjustment capacitor assembly 12, the uniformity adjustment coil assembly, and the discharge cavity 15 together are used to excite ionization within the discharge cavity 15 to generate the required plasma.

[0081] The uniformity adjustment device for ion beam etching, through the uniformity adjustment capacitor assembly 12 and the uniformity adjustment coil assembly installed at a preset position in the discharge cavity 15, achieves the adjustment of the power on the planar coil 13 and / or the cylindrical coil 14 in the uniformity adjustment coil assembly, and ultimately achieves the adjustment of the plasma density distribution in the discharge cavity 15. Furthermore, it can further optimize the arrangement of the planar coil 13 and / or the cylindrical coil 14 in the installation position (for example, to make the planar coil 13 and / or the cylindrical coil 14 arranged non-centrally symmetrically or centrally symmetrically), and can further precisely optimize and adjust the plasma density distribution in the discharge cavity 15 to achieve the expected plasma density distribution in the discharge cavity 15, thereby achieving uniformity adjustment of ion beam etching, which is particularly effective for etching oblique tooth gratings.

[0082] Optionally, in another embodiment of the invention, such as Figure 3 As shown, the power matching network 11 includes: a first adjustable capacitor VC1, a first inductor L1, and a first capacitor C1.

[0083] The first end of the first inductor L1 is connected to the first end of the first adjustable capacitor VC1, and the connection node is connected to the output terminal of the radio frequency power supply RF1.

[0084] The second terminal of the first adjustable capacitor VC1 is grounded.

[0085] The second end of the first inductor L1 is connected to the first end of the first capacitor C1, and the second end of the first capacitor C1 serves as the output end of the power matching network 11.

[0086] Specifically, in this embodiment of the invention, the first adjustable capacitor VC1 can also be replaced with a capacitor with an adjustable capacitance value, such as a motor capacitor. The power matching network 11 adjusts its own capacitance and inductance to meet the matching working state of the radio frequency power supply RF1.

[0087] Optionally, in another embodiment of the invention, such as Figure 3 As shown, the uniformity adjustment capacitor assembly 12 includes a second adjustable capacitor VC2 and a third adjustable capacitor VC3.

[0088] The first end of the second adjustable capacitor VC2 and the first end of the third adjustable capacitor VC3 are connected, and the connection node is connected to the output of the power matching network 11.

[0089] The second terminal of the second adjustable capacitor VC2 serves as the first output terminal of the uniformity adjustment capacitor assembly 12.

[0090] The second terminal of the third adjustable capacitor VC3 serves as the second output terminal of the uniformity adjustment capacitor assembly 12.

[0091] Optionally, the capacitance value of the second adjustable capacitor VC2 is in the range of 0pF-250pF.

[0092] The capacitance value of the third adjustable capacitor VC3 ranges from 0pF to 250pF.

[0093] Optional, such as Figure 3 As shown, the uniformity adjustment device further includes a second capacitor C2 and a third capacitor C3.

[0094] The second end of the planar coil 13 is grounded through the second capacitor C2.

[0095] The second end of the cylindrical coil 14 is grounded through the third capacitor C3.

[0096] Specifically, in this embodiment of the invention, the second adjustable capacitor VC2 can also be replaced with a capacitor with an adjustable capacitance value, such as a motor capacitor. Similarly, the third adjustable capacitor VC3 can also be replaced with a capacitor with an adjustable capacitance value, such as a motor capacitor. Since the RF power output through the power matching network 11 is constant, the impedance on these two branches can be changed by adjusting the capacitance values ​​of the second adjustable capacitor VC2 and / or the third adjustable capacitor VC3 on the two branches. This achieves the adjustment of the power on the planar coil 13 and / or the cylindrical coil 14 in the uniformity adjustment coil assembly, and ultimately achieves the adjustment of the plasma density distribution in the discharge cavity 15.

[0097] Optionally, in another embodiment of the present invention, the planar coil 13 is arranged in a non-centrally symmetrical manner at the bottom of the discharge cavity 15, or the planar coil 13 is arranged in a centrally symmetrical manner at the bottom of the discharge cavity 15.

[0098] The cylindrical coil 14 is arranged in a non-centrally symmetrical manner on the outer wall of the discharge cavity 15, or the cylindrical coil 14 is arranged in a centrally symmetrical manner on the outer wall of the discharge cavity 15.

[0099] Specifically, in this embodiment of the invention, the planar coil 13 and the cylindrical coil 14 are arranged in the following four forms: First, the planar coil 13 is arranged non-centrally symmetrically at the bottom of the discharge cavity 15, and the cylindrical coil 14 is arranged non-centrally symmetrically on the outer wall of the discharge cavity 15; Second, the planar coil 13 is arranged non-centrally symmetrically at the bottom of the discharge cavity 15, and the cylindrical coil 14 is arranged centrally symmetrically on the outer wall of the discharge cavity 15; Third, the planar coil 13 is arranged centrally symmetrically at the bottom of the discharge cavity 15, and the cylindrical coil 14 is arranged non-centrally symmetrically on the outer wall of the discharge cavity 15; Fourth, the planar coil 13 is arranged centrally symmetrically at the bottom of the discharge cavity 15, and the cylindrical coil 14 is arranged centrally symmetrically on the outer wall of the discharge cavity 15. The specific arrangement method can be determined according to the actual situation and is not limited in this embodiment of the invention.

[0100] Specifically, in the embodiments of the present invention, the desired plasma density distribution can be achieved based on different arrangements of planar coils 13 and cylindrical coils 14, thereby achieving uniformity adjustment of etching.

[0101] The following details several different arrangements and combinations of planar coil 13 and cylindrical coil 14:

[0102] First type: Reference Figure 6 , Figure 6 A schematic diagram of the arrangement of planar coils and cylindrical coils on a discharge cavity is provided for an embodiment of the present invention; as shown. Figure 6 As shown, the cylindrical coil 14 is non-centrally symmetrically designed and wound around the outer wall of the discharge cavity 15, while the planar coil 13 is centrally symmetrically designed and placed at the bottom of the discharge cavity 15. The upper half of the discharge cavity 15 has half a turn of the radio frequency coil more than the lower half, which obviously results in a stronger induced electric field, used to achieve the desired non-uniform distribution of plasma with more at the top and less at the bottom. At the same time, by adjusting the capacitance values ​​of the second adjustable capacitor VC2 and the third adjustable capacitor VC3, the power distribution of the planar coil 13 and the cylindrical coil 14 can be adjusted, allowing for more precise uniformity adjustment.

[0103] The second type: Reference Figure 7 , Figure 7 This is a schematic diagram illustrating another arrangement of planar coils and cylindrical coils in a discharge cavity, provided by an embodiment of the present invention; as shown. Figure 7As shown, the cylindrical coil 14 is non-centrally symmetrically designed and wound around the outer wall of the discharge cavity 15, while the planar coil 13 is centrally symmetrically designed and placed at the bottom of the discharge cavity 15. The upper half of the discharge cavity 15 has half a turn of the radio frequency coil less than the lower half, which obviously results in a weaker induced electric field, thus achieving the desired non-uniform distribution of plasma with less at the top and more at the bottom. At the same time, by adjusting the capacitance values ​​of the second adjustable capacitor VC2 and the third adjustable capacitor VC3, the power distribution of the planar coil 13 and the cylindrical coil 14 can be adjusted, allowing for more precise uniformity adjustment.

[0104] The third type: Reference Figure 8 , Figure 8 This is a schematic diagram illustrating the arrangement of planar coils and cylindrical coils in a discharge cavity, as provided in an embodiment of the present invention; for example... Figure 8 As shown, the cylindrical coil 14 is designed with central symmetry and is wound around the outer wall of the discharge cavity 15, while the planar coil 13 is designed with central symmetry and is placed at the bottom of the discharge cavity 15 to achieve the desired uniform distribution of plasma density from top to bottom. At the same time, by adjusting the capacitance values ​​of the second adjustable capacitor VC2 and the third adjustable capacitor VC3, the power distribution of the planar coil 13 and the cylindrical coil 14 can be adjusted, allowing for more precise adjustment of uniformity.

[0105] The fourth type: Reference Figure 9 , Figure 9 This is a schematic diagram illustrating the arrangement of planar coils and cylindrical coils in a discharge cavity, as provided in an embodiment of the present invention; for example... Figure 9 As shown, the cylindrical coil 14 is designed with central symmetry and wound around the outer wall of the discharge cavity 15, while the planar coil 13 is designed with central symmetry and placed on the inner side of the bottom of the discharge cavity 15. The inner side of the bottom of the discharge cavity 15 is affected by the planar coil 13, so the induced electric field here will obviously be stronger, which is used to achieve the desired non-uniform distribution of plasma with more in the middle and less at the edges. At the same time, by adjusting the capacitance values ​​of the second adjustable capacitor VC2 and the third adjustable capacitor VC3, the power distribution of the planar coil 13 and the cylindrical coil 14 can be adjusted, and the uniformity can be adjusted more precisely.

[0106] Fifth type: Reference Figure 10 , Figure 10 This is a schematic diagram illustrating the arrangement of planar coils and cylindrical coils in a discharge cavity, as provided in an embodiment of the present invention; for example... Figure 10As shown, the cylindrical coil 14 is designed with central symmetry and wound around the outer wall of the discharge cavity 15, while the planar coil 13 is designed with central symmetry and placed on the outer side of the bottom of the discharge cavity 15. The outer side of the bottom of the discharge cavity 15 is affected by the planar coil 13, so the induced electric field here will obviously be stronger, which is used to achieve the desired non-uniform distribution of plasma with fewer particles in the middle and more particles at the edges. At the same time, by adjusting the capacitance values ​​of the second adjustable capacitor VC2 and the third adjustable capacitor VC3, the power distribution of the planar coil 13 and the cylindrical coil 14 can be adjusted, and the uniformity can be adjusted more precisely.

[0107] As described above, in the embodiments of the present invention, based on different arrangements and combinations of planar coils 13 and cylindrical coils 14, the desired plasma density distribution can be achieved, thereby realizing the adjustment of etching uniformity.

[0108] Optionally, in another embodiment of the invention, such as Figure 3 As shown, the uniformity adjustment device further includes an optical grating system.

[0109] The optical grating system is used to extract the plasma generated in the discharge cavity 15.

[0110] The optical grating system includes a grating 16, a first power supply Beam-V, a second power supply Accelerate-V, a first filter, and a second filter.

[0111] The grid 16 is located at the outlet of the discharge cavity 15. The grid 16 includes a screen grid and an acceleration grid. The screen grid is located between the acceleration grid and the outlet of the discharge cavity 15.

[0112] The first power supply Beam-V is connected to the screen grid, and optionally the first power supply Beam-V is connected to the screen grid through the first filter.

[0113] The second power supply Accelerate-V is connected to the acceleration grid, and optionally the second power supply Accelerate-V is connected to the acceleration grid through the second filter.

[0114] The first filter includes: a fourth capacitor C4 and a second inductor L2.

[0115] The first end of the fourth capacitor C4 is connected to the first end of the second inductor L2, and the connection node is connected to the output terminal of the first power supply Beam-V.

[0116] The second end of the second inductor L2 is connected to the screen grid.

[0117] The second terminal of the fourth capacitor C4 is grounded.

[0118] The second filter includes a fifth capacitor C5 and a third inductor L3.

[0119] The first end of the fifth capacitor C5 is connected to the first end of the third inductor L3, and the connection node is connected to the output terminal of the second power supply Accelerate-V.

[0120] The second end of the third inductor L3 is connected to the acceleration grid.

[0121] The second terminal of the fifth capacitor C5 is grounded.

[0122] Specifically, in this embodiment of the invention, the optical grating system is used for beam extraction of ions. As described above, the uniformity adjustment device for ion beam etching, through the uniformity adjustment capacitor assembly 12 and the uniformity adjustment coil assembly installed at a preset position in the discharge cavity 15, achieves the adjustment of the power on the planar coil 13 and / or the cylindrical coil 14 in the uniformity adjustment coil assembly, and ultimately achieves the adjustment of the plasma density distribution in the discharge cavity 15. Furthermore, the arrangement of the planar coil 13 and / or the cylindrical coil 14 at the installation position can be further optimized (for example, the planar coil 13 and / or the cylindrical coil 14 can be arranged in a non-centrally symmetrical or centrally symmetrical manner). The plasma density distribution in the discharge cavity 15 can be further optimized and adjusted more precisely to achieve the expected plasma density distribution in the discharge cavity 15. After that, the plasma is extracted through the optical grating system, thereby achieving uniformity adjustment of ion beam etching, which is particularly effective for etching oblique tooth gratings.

[0123] It should be noted that, Figure 3 The full name of FT is Feed Through, which is a sealed connector. The space where the discharge chamber 15 is located is a vacuum environment. The space where the RF power supply RF1, power matching network 11, uniformity adjustment capacitor assembly 12, uniformity adjustment coil assembly, second capacitor C2, third capacitor C3, first power supply Beam-V, second power supply Accelerate-V, first filter and second filter are located is an atmospheric environment. The devices are connected through the sealed connector FT.

[0124] Optionally, based on all the above embodiments of the present invention, another embodiment of the present invention also provides a method for adjusting the uniformity of ion beam etching, wherein the uniformity adjustment method is based on the uniformity adjustment device described in any of the above embodiments, with reference to... Figure 11 , Figure 11 This is a schematic flowchart of a method for adjusting the uniformity of ion beam etching according to an embodiment of the present invention. The uniformity adjustment method includes:

[0125] S101: Control the radio frequency power supply to generate a first operating voltage, the first operating voltage being used to control the generation of plasma in the discharge cavity.

[0126] S102: Control the power matching network to regulate the output of the radio frequency power supply.

[0127] S103: Adjust the capacitance value of the uniformity adjustment capacitor assembly to adjust the power on the planar coil and / or the cylindrical coil respectively, so as to adjust the plasma density distribution in the discharge cavity.

[0128] Optionally, in another embodiment of the present invention, the uniformity adjustment capacitor assembly includes: a second adjustable capacitor and a third adjustable capacitor.

[0129] The first end of the second adjustable capacitor and the first end of the third adjustable capacitor are connected, and the connection node is connected to the output end of the power matching network; the second end of the second adjustable capacitor serves as the first output end of the uniformity adjustment capacitor assembly; the second end of the third adjustable capacitor serves as the second output end of the uniformity adjustment capacitor assembly.

[0130] The adjustment of the capacitance value of the uniformity adjustment capacitor assembly to adjust the power on the planar coil and / or the cylindrical coil, thereby adjusting the plasma density distribution within the discharge cavity, includes:

[0131] Adjusting the capacitance value of the second adjustable capacitor and / or adjusting the capacitance value of the third adjustable capacitor respectively adjusts the power on the planar coil and / or the cylindrical coil, thereby adjusting the plasma density distribution in the discharge cavity.

[0132] Optionally, in another embodiment of the present invention, the capacitance value range of the second adjustable capacitor is 0pF-250pF; the capacitance value range of the third adjustable capacitor is 0pF-250pF.

[0133] It should be noted that the ion beam etching uniformity adjustment method provided in the embodiments of the present invention is based on the same principle as the ion beam etching uniformity adjustment device provided in the above embodiments of the present invention, and will not be described again here.

[0134] The foregoing has provided a detailed description of the uniformity adjustment device and method for ion beam etching provided by the present invention. Specific examples have been used to illustrate the principle and implementation of the present invention. The description of the above embodiments is only for the purpose of helping to understand the method and core idea of ​​the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation and application scope based on the idea of ​​the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

[0135] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to the method section.

[0136] It should also be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that elements inherent to a process, method, article, or apparatus that comprises a list of elements, or elements inherent to such processes, methods, articles, or apparatus, are also included. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0137] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A device for adjusting the uniformity of ion beam etching, characterized in that, The uniformity adjustment device includes: a radio frequency power supply, a power matching network, a uniformity adjustment capacitor assembly, a uniformity adjustment coil assembly, and a discharge cavity. The uniformity adjustment coil assembly includes a planar coil and a cylindrical coil. The first end of the cylindrical coil is connected to the first output end of the uniformity adjustment capacitor assembly, and the first end of the planar coil is connected to the second output end of the uniformity adjustment capacitor assembly. The planar coil is located at the bottom of the discharge cavity, and the cylindrical coil is wound around the outer wall of the discharge cavity. The planar coil is arranged in a non-centrosymmetric manner at the bottom of the discharge cavity, and the cylindrical coil is arranged in a non-centrosymmetric manner on the outer wall of the discharge cavity; or, the planar coil is arranged in a non-centrosymmetric manner at the bottom of the discharge cavity, and the cylindrical coil is arranged in a centrosymmetric manner on the outer wall of the discharge cavity; or, the planar coil is arranged in a centrosymmetric manner at the bottom of the discharge cavity, and the cylindrical coil is arranged in a non-centrosymmetric manner on the outer wall of the discharge cavity. The radio frequency power supply is used to generate a first operating voltage to control the generation of plasma in the discharge cavity; The power matching network is used to regulate the output of the radio frequency power supply; The uniformity adjustment capacitor assembly is used to adjust the power on the planar coil and / or the cylindrical coil by adjusting its own capacitance value, so as to adjust the plasma density distribution in the discharge cavity.

2. The uniformity adjustment device according to claim 1, characterized in that, The power matching network includes: a first adjustable capacitor, a first inductor coil, and a first capacitor; The first end of the first inductor coil is connected to the first end of the first adjustable capacitor, and the connection node is connected to the output terminal of the radio frequency power supply. The second terminal of the first adjustable capacitor is grounded; The second end of the first inductor is connected to the first end of the first capacitor, and the second end of the first capacitor serves as the output terminal of the power matching network.

3. The uniformity adjustment device according to claim 1, characterized in that, The uniformity adjustment capacitor assembly includes: a second adjustable capacitor and a third adjustable capacitor; The first end of the second adjustable capacitor and the first end of the third adjustable capacitor are connected, and the connection node is connected to the output terminal of the power matching network. The second terminal of the second adjustable capacitor serves as the first output terminal of the uniformity adjustment capacitor assembly. The second terminal of the third adjustable capacitor serves as the second output terminal of the uniformity adjustment capacitor assembly.

4. The uniformity adjustment device according to claim 3, characterized in that, The capacitance value of the second adjustable capacitor ranges from 0pF to 250pF.

5. The uniformity adjustment device according to claim 3, characterized in that, The capacitance value of the third adjustable capacitor ranges from 0pF to 250pF.

6. The uniformity adjustment device according to claim 1, characterized in that, The uniformity adjustment device further includes: a second capacitor and a third capacitor; The second end of the planar coil is grounded through the second capacitor; The second end of the cylindrical coil is grounded through the third capacitor.

7. The uniformity adjustment device according to claim 1, characterized in that, The uniformity adjustment device further includes: an optical grating system; The optical grating system is used to extract the plasma generated in the discharge cavity.

8. The uniformity adjustment device according to claim 7, characterized in that, The optical grating system includes: a grating; The grid is located at the outlet of the discharge cavity. The grid includes a screen grid and an acceleration grid, with the screen grid located between the acceleration grid and the outlet of the discharge cavity.

9. The uniformity adjustment device according to claim 8, characterized in that, The optical grating system further includes: a first power supply and a second power supply; The first power supply is connected to the screen grid; The second power supply is connected to the acceleration grid.

10. The uniformity adjustment device according to claim 9, characterized in that, The optical grating system further includes: a first filter and a second filter; The first power supply is connected to the screen grid through the first filter; The second power supply is connected to the acceleration grid through the second filter.

11. The uniformity adjustment device according to claim 10, characterized in that, The first filter includes: a fourth capacitor and a second inductor coil; The first end of the fourth capacitor is connected to the first end of the second inductor coil, and the connection node is connected to the output terminal of the first power supply. The second end of the second inductor coil is connected to the screen grid. The second terminal of the fourth capacitor is grounded.

12. The uniformity adjustment device according to claim 10, characterized in that, The second filter includes: a fifth capacitor and a third inductor coil; The first end of the fifth capacitor is connected to the first end of the third inductor, and the connection node is connected to the output terminal of the second power supply. The second end of the third inductor coil is connected to the acceleration grid. The second terminal of the fifth capacitor is grounded.

13. A method for adjusting the uniformity of ion beam etching, characterized in that, The uniformity adjustment method is based on the uniformity adjustment device according to any one of claims 1-12, and the uniformity adjustment method includes: The radio frequency power supply is controlled to generate a first operating voltage, which is used to control the generation of plasma in the discharge cavity; The power matching network is used to regulate the output of the radio frequency power supply. The capacitance value of the uniformity adjustment capacitor assembly is adjusted to regulate the power on the planar coil and / or the cylindrical coil, thereby adjusting the plasma density distribution within the discharge cavity.

14. The uniformity adjustment method according to claim 13, characterized in that, The uniformity adjustment capacitor assembly includes: a second adjustable capacitor and a third adjustable capacitor; The first terminal of the second adjustable capacitor and the first terminal of the third adjustable capacitor are connected, and the connection node is connected to the output terminal of the power matching network; the second terminal of the second adjustable capacitor serves as the first output terminal of the uniformity adjustment capacitor assembly; the second terminal of the third adjustable capacitor serves as the second output terminal of the uniformity adjustment capacitor assembly. The adjustment of the capacitance value of the uniformity adjustment capacitor assembly to adjust the power on the planar coil and / or the cylindrical coil, thereby adjusting the plasma density distribution within the discharge cavity, includes: Adjusting the capacitance value of the second adjustable capacitor and / or adjusting the capacitance value of the third adjustable capacitor respectively adjusts the power on the planar coil and / or the cylindrical coil, thereby adjusting the plasma density distribution in the discharge cavity.

15. The uniformity adjustment method according to claim 14, characterized in that, The capacitance value of the second adjustable capacitor ranges from 0pF to 250pF.

16. The uniformity adjustment method according to claim 14, characterized in that, The capacitance value of the third adjustable capacitor ranges from 0pF to 250pF.

Images