A cesium deposition diagnostic device and method based on temperature-controlled micro-quartz balance

Abstract

The invention discloses a cesium deposition diagnosis device and method based on a temperature-controlled micro-quartz balance, belonging to the field of negative ion sources and cesium deposition diagnosis. The device is plated with nickel or molybdenum on the surface of an original gold wafer of QMB to simulate the deposition of cesium in the negative ion source on a plasma grid, thereby realizing the deposition diagnosis of cesium on the plasma grid, and thereby the deposition effect of cesium on the nickel- or molybdenum-plated crystal surface can be compared and analyzed; a movable cesium baffle is designed, and in the unstable stage of cesium current, the cesium baffle covers the cesium surface of the wafer to prevent cesium in the cavity from adhering to the wafer, and after the cesium current is stable, the cesium baffle is removed to allow cesium to be deposited on the wafer, thereby improving the measurement accuracy and extending the service life of the wafer; the temperature control of the wafer is realized by a temperature control system, thereby carrying out experiments on multiple wafers such as molybdenum, and more comprehensively studying the adsorption and dissociation process of cesium, which is helpful for studying and analyzing the influence of temperature and base metal types on the deposition effect of cesium adsorption and dissociation.

Description

Technical Field

[0001] The invention belongs to the field of negative ion sources and cesium deposition diagnosis, and more specifically, relates to a cesium deposition diagnosis device and method based on a temperature-controlled micro-quartz balance. Background Art

[0002] In the negative ion source part of the neutral beam injection system, most of the introduced negative hydrogen ions are generated on the plasma grid plate in the extraction area. This is because the cesium layer deposited on the surface of the grid plate can significantly reduce the metal surface work function, thereby greatly increasing the yield of negative hydrogen ions. Since there is a certain relationship between the thickness of the cesium layer deposited on the grid plate surface and the yield of negative hydrogen ions, studying the surface deposition of cesium on the plasma grid is of great significance for improving the yield of negative hydrogen ions.

[0003] The Quartz Microbalance (QMB) mainly utilizes the piezoelectric effect and mass load effect of quartz crystals. By establishing the relationship between the mass of the thin film material deposited by the crystal and the frequency obtained on the thin film controller, the angstrom can be detected. The film thickness change of the order of magnitude can be used to monitor the thickness and quality of the deposited layer.

[0004] The existing technology usually directly uses typical crystal gold from QMB manufacturers for cesium diagnosis. However, due to the different materials of the gold wafer and the plasma grid plate, the obtained cesium deposition data cannot be fed back to the deposition control of the plasma grid plate of the negative ion source. In addition, the existing experimental equipment cannot provide multi-temperature and long-term stable detection to meet the needs of comparative experiments, and the influence of the unstable stage of the cesium flow on the cesium deposition effect is not ruled out. Summary of the invention

[0005] In view of the above defects or improvement needs of the prior art, the present invention provides a cesium deposition diagnostic device and method based on a temperature-controlled micro-quartz balance, which can achieve accurate measurement of cesium deposition on the surface of a plasma grid plate.

[0006] To achieve the above-mentioned object, according to a first aspect of the present invention, a cesium deposition diagnostic device based on a temperature-controlled micro-quartz balance is provided, comprising: an experimental chamber, a QMB, a first SID, a second SID, a cesium baffle, a temperature control module, a controller and a data acquisition device;

[0007] One end of the experimental cavity is connected to the cesium furnace nozzle, and the other end is connected to the vacuum pump; the QMB, the first SID, the second SID and the cesium baffle are all located inside the experimental cavity; the vacuum pump is used to keep the experimental cavity in a vacuum state;

[0008] The first SID is used to measure the SID current I1 at the nozzle of the cesium furnace, and the second SID is used to detect the SID current I2 at other positions in the experimental chamber;

[0009] The wafer of the QMB is plated with nickel or molybdenum, and the QMB is used to measure the deposition thickness of cesium on the surface of the wafer;

[0010] The temperature control module is used to control the temperature T of the wafer;

[0011] The cesium-coated baffle is used to cover the cesium-coated surface of the wafer in an initial state;

[0012] The controller is used to determine the cesium flux a at the cesium furnace nozzle according to I1 when the cesium furnace nozzle injects cesium into the experimental chamber, and to determine the cesium flux b at other positions in the experimental chamber according to I2, and to remove the cesium baffle when a and b are both stable and T meets the measurement temperature, and to control the data collector to collect the QMB data to obtain the deposition thickness of cesium on the surface of the QMB wafer in the adsorption stage;

[0013] The controller is also used to move the cesium-impacting baffle to cover the cesium-impacting surface when the cesium furnace nozzle stops injecting cesium into the experimental chamber, remove the cesium-impacting baffle when a and b are both stable at zero and T meets the measurement temperature, and control the data collector to collect the QMB data to obtain the deposition thickness of cesium on the QMB wafer surface during the dissociation stage.

[0014] According to a second aspect of the present invention, there is provided a cesium deposition diagnostic method based on a temperature-controlled micro-quartz balance, which is applied to the device as described in the first aspect, comprising:

[0015] S1, evacuate the experimental chamber, and when the air pressure in the experimental chamber reaches a preset value, inject cesium into the experimental chamber. When a and b are both stable at zero and T meets the measurement temperature, remove the cesium baffle, and collect the data of the QMB measurement to obtain the deposition thickness of cesium on the QMB wafer surface during the adsorption stage.

[0016] In general, the above technical solutions conceived by the present invention can achieve the following beneficial effects compared with the prior art:

[0017] The device provided by the present invention has nickel or molybdenum plated on the surface of the original gold wafer of QMB to simulate the deposition of cesium in the negative ion source on the plasma grid, thereby realizing the deposition diagnosis of cesium on the plasma grid, and thereby the deposition effect of cesium on the nickel or molybdenum plated crystal surface can be compared and analyzed; a movable cesium baffle is designed, and in the unstable stage of cesium current, the cesium baffle covers the cesium surface of the wafer to prevent cesium in the experimental cavity from adhering to the wafer, and after the cesium current is stable, the cesium baffle is removed to allow cesium to be deposited on the wafer, thereby improving the measurement accuracy and extending the service life of the wafer; the temperature control module is used to realize the temperature control of the wafer, thereby carrying out experiments on multiple wafers such as molybdenum, and more comprehensively studying the adsorption and dissociation process of cesium, which is helpful for studying and analyzing the influence of temperature and base metal type on the deposition effect of cesium adsorption and dissociation.

[0018] Furthermore, the temperature control module used in the device provided by the present invention includes a temperature measurement circuit, a water cooling module, a heating module and a control module. The temperature measurement circuit, the water cooling module and the heating module are arranged on the non-cesium contacting surface of the chip. The structure is compact and can realize fast and accurate control of the chip temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A structural diagram of a cesium deposition diagnostic device based on a temperature-controlled micro-quartz balance provided in an embodiment of the present invention;

[0020] Figure 2 A flow chart of a cesium deposition diagnostic method based on a temperature-controlled micro-quartz balance provided in an embodiment of the present invention.

[0021] Figure 3 The figure is a schematic diagram of cesium adsorption at different QMB temperatures under a certain cesium furnace spraying rate using the device provided by an embodiment of the present invention.

[0022] Figure 4 A schematic diagram of cesium dissociation at different QMB temperatures using the device provided by an embodiment of the present invention with the cesium furnace closed. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0024] The embodiment of the present invention provides a cesium deposition diagnostic device based on a temperature-controlled micro-quartz balance, such as Figure 1 As shown, it includes: an experimental chamber, a QMB, a first SID, a second SID, a cesium baffle, a temperature control module, a controller and a data collector;

[0025] One end of the experimental cavity is connected to the cesium furnace nozzle, and the other end is connected to the vacuum pump;

[0026] The vacuum pump is used to keep the experimental chamber in a vacuum state for about 10 -3 Pa high vacuum state;

[0027] The first SID is used to measure the SID current I1 at the nozzle of the cesium furnace, and the second SID is used to detect the SID current I2 at other positions in the experimental chamber;

[0028] The wafer of the QMB is plated with nickel or molybdenum, and the QMB is used to measure the deposition thickness of cesium on the surface of the wafer;

[0029] The temperature control module is used to control the temperature T of the wafer;

[0030] In an initial state, the cesium-coated baffle covers the cesium-coated surface of the wafer;

[0031] The controller is used to determine the cesium flux a at the cesium furnace nozzle according to I1 when the cesium furnace nozzle injects cesium into the experimental chamber, and to determine the cesium flux b at other positions in the experimental chamber according to I2, and to remove the cesium baffle when a and b are both stable and T meets the measurement temperature, and to control the data collector to collect the QMB data, so as to obtain the deposition thickness of cesium on the surface of the QMB wafer in the adsorption stage, so as to characterize the adsorption of cesium on the surface of the QMB wafer;

[0032] The controller is also used to move the cesium-impacting baffle to cover the cesium-impacting surface when the cesium furnace nozzle stops injecting cesium into the experimental chamber, remove the cesium-impacting baffle when a and b are both stable at zero and T meets the measurement temperature (the baffle covering the cesium-impacting surface will affect the cesium dissociation), control the data collector to collect the QMB data, and obtain the deposition thickness of cesium on the QMB wafer surface during the dissociation stage to characterize the dissociation of cesium on the QMB wafer surface.

[0033] like Figure 1As shown, the device provided by the present invention includes: an experimental chamber, a cesium furnace, a QMB, a wafer 2 of the QMB plated with nickel or molybdenum, a first SID 7, a second SID 8, a cesium baffle 1, a temperature control module, a vacuum pump, a controller and a data acquisition device. Cesium deposition diagnosis needs to be performed in a vacuum environment, so the vacuum pump is used to evacuate the experimental chamber; preferably, the vacuum pump includes a mechanical pump and a molecular pump connected in sequence. The experimental chamber is injected with cesium by the cesium furnace through the nozzle 4; the QMB is used to monitor the coverage of cesium on the surface of the crystal 2 plated with nickel or molybdenum; the first SID is used to monitor the SID current I1 at the nozzle, and the second SID is used to monitor the SID current I2 at other positions in the experimental chamber; the controller can calculate the cesium flux a at the nozzle of the cesium furnace according to I1, and the cesium flux b at other positions in the experimental chamber according to I2; the controller controls the cesium baffle to cover the QMB in the unstable stage of the cesium flow; the temperature control module is used to stabilize the QMB temperature at a preset value to realize the diagnosis of the cesium deposition effect at different temperatures.

[0034] In the initial state, the cesium-coated baffle 1 is used to cover the cesium-coated surface of the wafer 2 of the QMB ( Figure 1 The cesium-affected surface shown in the figure is the left side of the wafer). Except for the cesium-affected surface, the rest of the wafer is surrounded by a ceramic heater 5 and a water-cooling pipe, wherein the connecting pipe 6 includes a water-cooling pipe, a heating circuit and a temperature measuring circuit. The rear of the cavity is connected in sequence with a mechanical pump and a molecular pump 3 for vacuuming. The cesium furnace nozzle 4 is inserted into the cavity for cesium injection. The first SID (Surface Ionization Detector) 7 is used to detect the SID current I1 at the cesium furnace nozzle, and the second SID is used to detect the SID current I2 at other positions in the experimental cavity.

[0035] The wafer used in the device provided by the present invention is plated with nickel or molybdenum on the surface of the original gold wafer to simulate the deposition of cesium in the negative ion source on the plasma grid, and the deposition effect of cesium on the nickel- or molybdenum-plated crystal surface can be compared and analyzed. In addition, since the vibration frequency of QBM is linearly correlated with the thickness change when the deposited film layer is within a certain thickness range, and it is extremely insensitive to temperature changes, the QMB temperature can be changed before cesium is deposited to a certain thickness, and the deposition of cesium on the corresponding metal substrate at different temperatures can be collected.

[0036] The device provided by the present invention is designed with a movable cesium baffle to avoid interference of unstable cesium flow on experimental data measurement during the experimental startup stage and during the transformation stage of studying the cesium deposition, dissociation and adsorption process. The cesium baffle can cover the cesium surface of the wafer to prevent cesium in the cavity from adhering to the wafer during the unstable stage of the cesium flow. After the cesium flow is stable, the cesium baffle is removed to deposit cesium on the wafer. The first and second SIDs set in the cavity can respectively monitor the SID currents I1 and I2 at the cesium furnace nozzle and other positions in the cavity in real time. The cesium flux a at the cesium furnace nozzle can be calculated based on I1, and the cesium flux at other positions in the experimental cavity can be calculated based on I2, thereby judging whether the cesium flow in the experimental cavity is in a stable state. In addition, using the cesium baffle to cover the cesium surface of the wafer during the unstable stage of the cesium flow can reduce the attachment of excess cesium to the wafer surface, thereby indirectly extending the service life of the wafer.

[0037] The second SID may be disposed at other locations in the cavity other than the nozzle, preferably, as Figure 1 As shown, the cesium furnace nozzle is arranged on the front side of the wafer, and the second SID is arranged on the back side of the wafer.

[0038] Preferably, the temperature control module includes a temperature measurement circuit, a water cooling module, a heating module and a control module. The temperature measurement circuit, the water cooling module and the heating module are arranged on the non-cesium contacting surface of the chip. The control module is used to control the water cooling module or the heating module to cool or heat the chip according to the measurement result of the temperature measurement circuit so that the temperature of the chip meets the measured temperature.

[0039] Preferably, the heating module is a ceramic heater, and the water cooling module is a water cooling pipe.

[0040] It is understandable that the structure of the above-mentioned temperature control module is only a preferred method, and other modules or devices that can achieve corresponding temperature control functions can also be used as the temperature control module of the present application, and the present invention does not make a unique limitation on this.

[0041] The device provided by the present invention designs a temperature control system for QMB. The temperature of the plasma grid plate in the negative ion source is often required to be maintained at about 150°C. At this temperature, the cesium deposition effect is better and the yield of hydrogen anions can be maximized. In order to study the influence of different temperatures on the cesium deposition within a certain temperature range, a ceramic heater is used as a heating module to surround the other parts of the wafer except the cesium surface to heat it, and cooperate with a water cooling system (i.e., a water cooling module) so that the temperature of the wafer can be adjusted and stabilized within a large range.

[0042] The device provided by the present invention adopts a QMB cesium baffle and a SID in combination. During the process of starting and shutting down the cesium furnace, the baffle covers the cesium surface of the wafer to avoid interference with the experimental data measurement during the unstable stage of the cesium flow. The first and second SIDs can respectively monitor the cesium flux size at the corresponding positions in the cesium furnace nozzle and the cavity in real time, thereby determining the timing of moving the baffle.

[0043] Before the experiment begins, the QMB cesium baffle is placed on the wafer. The experimental chamber is then evacuated. The wafer is heated to a preset temperature using a heating system, and the temperature is stabilized at the preset temperature using a water cooling system. The cesium ampoule is smashed to allow the cesium furnace to erupt and begin injecting cesium. After the two surface ionization detectors (SIDs) in the chamber detect that the cesium injection has entered a stable phase, the cesium baffle is removed to begin collecting the adsorption of cesium on the wafer. After the cesium deposition thickness reaches a certain value, the cesium furnace is stopped from erupting, and the QMB cesium baffle is moved to cover the wafer. Similarly, after the SID detects that the cesium flow is stable, the baffle is removed to collect the dissociation of cesium on the wafer.

[0044] It is understandable that the cesium flow will only stabilize after the cesium furnace injection speed has changed for a certain period of time. Therefore, the cesium injection entering a stable stage means that the cesium flow fluctuation amplitude is within a certain small range. The specific fluctuation range can be set according to actual conditions.

[0045] The process of measuring cesium deposition using the device provided by the present invention is as follows: first, diagnose the adsorption of cesium on a certain metal substrate (nickel or molybdenum). At the beginning of the experiment, the cesium furnace is turned on and the temperature is increased. The wafer needs to be covered with a cesium baffle to eliminate the influence of the unstable stage of the cesium current on the cesium deposition effect and indirectly extend the service life of the wafer; after the SID current measured by the first and second SIDs determines that the cesium current is stable and the temperature measured by the temperature control system is stable and meets the requirements, the baffle is removed for measurement; when the cesium layer increases to a certain specified thickness during the measurement stage, the QMB measurement data at the temperature is terminated. After the adsorption phase experimental data collection is completed, the baffle is covered again, the cesium furnace is closed, and the dissociation of cesium on a certain metal substrate is measured; similarly, the baffle is moved according to whether the cesium flow and temperature are stable; during the dissociation process, when the cesium layer thickness dissociates back to the original specified thickness, the QMB measurement data collection at this temperature is terminated; the temperature is changed to prepare for the dissociation data of the cesium deposition process at the next set of temperatures; when the adsorption and dissociation of a certain metal substrate at each temperature are collected, the experiment is stopped, and after a period of time, the wafer of another metal substrate is replaced for measurement, and the experiment is carried out in the same steps. In this way, the cesium deposition on the wafer surface can be diagnosed, and the influence of temperature and metal substrate type on the cesium deposition effect can be analyzed.

[0046] It can be understood that the QMB measurement data is the vibration frequency of the wafer at each acquisition time, and the cesium deposition thickness at each acquisition time can be calculated based on the data.

[0047] The device provided by the embodiment of the present invention studies the adsorption and dissociation processes of cesium separately, and analyzes the adsorption rate of cesium on the corresponding temperature and metal substrate under the cesium furnace eruption rate by collecting cesium adsorption experimental data when the cesium furnace is stably erupted; when the cesium furnace is closed and the cesium flux is stable, collect experimental data to analyze the dissociation of cesium on the corresponding temperature and metal substrate. The deposition data of the cesium adsorption and dissociation stages can be collected in sequence, or the deposition data of the cesium adsorption stage can be collected separately.

[0048] In summary, the device provided by the embodiment of the present invention designs a temperature-controlled micro-quartz balance experimental platform, equips the QMB with a temperature control system, and adopts a ceramic heater in combination with a water cooling system to enable the chip to be adjusted and stabilized within a certain temperature range; uses SID to monitor the stability of the cavity cesium current in real time, and allows the baffle to cover the cesium surface of the chip during the unstable stage of the cavity cesium current, so as to avoid the unstable cesium current interfering with the experimental data and indirectly extend the service life of the chip; in order to consider the influence of the metal substrate on the cesium deposition, nickel or other metals are plated on the original metal surface of the chip to simulate the deposition of cesium on the plasma gate surface in the negative ion source. Based on the reflection of the QMB vibration frequency on the coating condition of the wafer surface, cesium deposition diagnosis experiments were carried out at different temperatures and on different metal substrates. The adsorption and dissociation processes of cesium were studied step by step, the adsorption of cesium was treated when the cesium furnace was stably erupting, and the dissociation of cesium was treated after the cesium furnace was closed and the cesium flow in the cavity was stable. The influence of the cesium flow on cesium deposition in the unstable stage can be eliminated, and the diagnosis of cesium surface deposition can be accurately realized.

[0049] An embodiment of the present invention provides a cesium deposition diagnosis method based on a temperature-controlled micro-quartz balance, which is applied to the device as described in any of the above embodiments, and is characterized by comprising:

[0050] S1, evacuate the experimental chamber, and when the air pressure in the experimental chamber reaches a preset value, inject cesium into the experimental chamber. When a and b are both stable at zero and T meets the measurement temperature, remove the cesium baffle, and collect the data of the QMB measurement to obtain the deposition thickness of cesium on the QMB wafer surface during the adsorption stage.

[0051] Preferably, the method further comprises:

[0052] S2, when the injection of cesium into the experimental chamber is stopped, the cesium-impacting baffle is moved to cover the cesium-impacting surface. When a and b are both stable at zero and T meets the measurement temperature, the cesium-impacting baffle is removed, and the data of the QMB measurement is collected to obtain the deposition thickness of cesium on the QMB wafer surface during the dissociation stage.

[0053] The method provided by the present invention can collect deposition data in the cesium adsorption and dissociation stages in sequence, and can also collect deposition data in the cesium adsorption stage alone.

[0054] When the method provided in the embodiment of the present invention is used to collect the deposition data of the cesium adsorption and dissociation stages in sequence, such as Figure 2 As shown, the specific steps include:

[0055] 1) After completing the pre-experimental steps, adjust the position of the cesium baffle 1 so that it covers the QMB wafer 2 to prevent the initial unstable stage of the subsequent cesium flow eruption from interfering with the experimental data; then use the vacuum pump connected to the back of the chamber to evacuate the experimental chamber, and after the air pressure in the experimental chamber drops to a certain value, let the cesium furnace erupt and start injecting cesium through the nozzle 4;

[0056] 2) The QMB chip is surrounded by a ceramic heater, a water cooling pipe and a temperature measuring device. The temperature of the QMB chip can be stabilized at a set reference value through temperature acquisition and the upper computer control heating system. The QMB chip 2 is heated to the lowest temperature to be measured using the ceramic heater 5, and is stabilized at the preset temperature value by cooperating with the water cooling pipe in the connecting pipe 6;

[0057] 3) After the QMB temperature control system measures that the chip temperature is stable at the preset value, and the first SID7 and the second SID8 set in the cavity detect that the cesium injection has entered the stable stage, the cesium baffle is removed and the adsorption of cesium on the chip surface at the current set temperature is collected;

[0058] 4) After the cesium deposition thickness reaches a certain value, the cesium baffle 1 is moved again to cover the QMB wafer 2 to prevent the cesium flow in the temperature rising stage from interfering with the experimental data;

[0059] 5) Increase the preset temperature to the next temperature value to be measured in the upper computer control interface of the temperature control system;

[0060] 6) Before completing the measurement of cesium adsorption on a certain metal substrate at various temperatures, cyclically execute steps 2) to 5);

[0061] 7) Turn off the cesium furnace and stop injecting cesium, and measure the dissociation of cesium on a certain metal substrate in the same way as steps 2) to 6);

[0062] However, it should be noted that: the QMB chip 2 must still be covered and protected by the cesium baffle 1 during the stage when the cesium flow and temperature are unstable; and the initial moment of the dissociation process at the preset temperature must be collected to ensure that the cesium deposition thickness corresponds to the cesium deposition thickness at the end of the cesium adsorption process at the previous corresponding temperature.

[0063] 8) When the adsorption and dissociation conditions of the metal substrate at each preset temperature are collected, the experiment is stopped. After a period of time, other metal substrate chips are replaced and the measurement experiment is carried out in the same steps of 1) to 7) to compare and analyze the influence of different metal substrates on the deposition effect of cesium.

[0064] Figure 3The figure shows the adsorption of cesium on the nickel metal substrate at different QMB temperatures under a certain cesium furnace spray rate. It can be seen that as the QMB temperature increases, the adsorption rate of cesium decreases.

[0065] Figure 4 The figure shows the adsorption of cesium on the nickel metal substrate at different QMB temperatures under a certain cesium furnace spray rate. It can be seen that as the QMB temperature increases, the dissociation rate of cesium increases accordingly.

[0066] An embodiment of the present invention provides a cesium deposition diagnostic system based on a temperature-controlled micro-quartz balance, comprising: a computer-readable storage medium and a processor;

[0067] The computer-readable storage medium is used to store executable instructions;

[0068] The processor is used to read the executable instructions stored in the computer-readable storage medium and execute the method described in any of the above embodiments.

[0069] It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A cesium deposition diagnostic device based on a temperature-controlled micro-quartz balance, characterized in that: include: Experimental chamber, QMB, first SID, second SID, cesium baffle, temperature control module, controller and data acquisition device; One end of the experimental cavity is connected to the cesium furnace nozzle, and the other end is connected to the vacuum pump; the QMB, the first SID, the second SID and the cesium baffle are all located inside the experimental cavity; the vacuum pump is used to keep the experimental cavity in a vacuum state; The first SID is used to measure the SID current I1 at the nozzle of the cesium furnace, and the second SID is used to detect the SID current I2 at other positions in the experimental chamber; The wafer of the QMB is plated with nickel or molybdenum, and the QMB is used to measure the deposition thickness of cesium on the surface of the wafer; The temperature control module is used to control the temperature T of the wafer; The cesium-coated baffle is used to cover the cesium-coated surface of the wafer in an initial state; The controller is used to determine the cesium flux a at the cesium furnace nozzle according to I1 when the cesium furnace nozzle injects cesium into the experimental chamber, and to determine the cesium flux b at other positions in the experimental chamber according to I2, and to remove the cesium baffle when a and b are both stable and T meets the measurement temperature, and to control the data collector to collect the QMB data to obtain the deposition thickness of cesium on the surface of the QMB wafer in the adsorption stage; The controller is also used to move the cesium baffle to cover the cesium surface when the cesium furnace nozzle stops injecting cesium into the experimental chamber, remove the cesium baffle when a and b are both stable to zero and T meets the measurement temperature, and control the data collector to collect the QMB data to obtain the deposition thickness of cesium on the QMB wafer surface during the dissociation stage; The temperature control module includes a temperature measurement circuit, a water cooling module, a heating module and a control module. The temperature measurement circuit, the water cooling module and the heating module are arranged on the non-cesium contacting surface of the chip. The control module is used to control the water cooling module or the heating module to cool or heat the chip according to the measurement result of the temperature measurement circuit, so that the temperature of the chip is stabilized at the measurement temperature.

2. The device according to claim 1, characterized in that The heating module is a ceramic heater, and the water cooling module is a water cooling pipe.

3. The device according to claim 1, characterized in that The vacuum pump comprises a mechanical pump and a molecular pump which are connected in sequence.

4. The device according to claim 1, characterized in that The second SID is disposed on the back side of the wafer.

5. A cesium deposition diagnostic method based on a temperature-controlled micro-quartz balance, applied to the device according to any one of claims 1 to 4, characterized in that: include: S1, evacuate the experimental chamber, and when the air pressure in the experimental chamber reaches a preset value, inject cesium into the experimental chamber. When a and b are both stable at zero and T meets the measurement temperature, remove the cesium baffle, and collect the data of the QMB measurement to obtain the deposition thickness of cesium on the QMB wafer surface during the adsorption stage.

6. The method according to claim 5, characterized in that Also includes: S2, when the injection of cesium into the experimental chamber is stopped, the cesium baffle is moved to cover the cesium surface. When a and b are both stable at zero and T meets the measurement temperature, the cesium baffle is removed, and the data of the QMB measurement is collected to obtain the deposition thickness of cesium on the QMB wafer surface during the dissociation stage.

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