Method for manufacturing semiconductor device and semiconductor device

Abstract

The present application provides a method for manufacturing a semiconductor device and a semiconductor device. The method includes: providing a semiconductor substrate structure and a metal thin film structure; heating at least one of the semiconductor substrate structure and the metal thin film structure to a bonding temperature; bonding a partial surface of the semiconductor substrate structure to a partial surface of the metal thin film structure; and fixing the bonding state of the semiconductor substrate structure and the metal thin film structure. By using this method to manufacture a semiconductor device, the manufacturing difficulty of the metal thin film in the semiconductor device can be reduced, the manufacturing time can be shortened, the manufacturing efficiency can be improved, the uniformity and manufacturing purity of the metal film layer can be improved, and thus the yield rate of the semiconductor device can be improved.

Description

Technical Field

[0001] This application relates to the technical field of semiconductor devices, and particularly to a method for manufacturing semiconductor devices and semiconductor devices. Background Art

[0002] With the development and progress of semiconductor device manufacturing technology, the requirements for the capacity of semiconductor devices are gradually increasing. In practical applications, large-capacity semiconductor devices usually need to carry a relatively high current. To reduce resistance and current density, the electrode thickness of semiconductor devices is usually increased.

[0003] However, in the existing methods for manufacturing semiconductor devices, methods such as evaporation coating, magnetron sputtering, and electroplating are usually used to grow metal thin films on the surface of semiconductor devices. However, when growing a relatively thick metal film layer, the existing manufacturing methods are time-consuming, it is difficult to ensure the uniformity of the thin film, and the target needs to be replaced during the manufacturing process, which affects the manufacturing efficiency of the device. Summary of the Invention

[0004] Based on this, the embodiments of this application provide a method for manufacturing semiconductor devices and semiconductor devices, which can reduce the manufacturing difficulty of metal thin films in semiconductor devices, shorten the manufacturing time, improve the manufacturing efficiency, improve the uniformity and manufacturing purity of the metal film layer, and thus can improve the yield rate of semiconductor devices.

[0005] In the first aspect of the embodiments of this application, a method for manufacturing a semiconductor device is provided, including:

[0006] Providing a semiconductor substrate structure and a metal thin film structure;

[0007] Heating at least one of the semiconductor substrate structure and the metal thin film structure to a bonding temperature;

[0008] Bonding a partial surface of the semiconductor substrate structure with a partial surface of the metal thin film structure;

[0009] Fixing the bonding state of the semiconductor substrate structure and the metal thin film structure.

[0010] In one embodiment, heating at least one of the semiconductor substrate structure and the metal thin film structure to the bonding temperature includes:

[0011] Heating the semiconductor substrate structure to the bonding temperature so that the metal thin film structure reaches a state where it can be extended at the bonding temperature.

[0012] In one embodiment, the bonding temperature is related to the melting point of the metal thin film structure and the softening temperature of the metal thin film structure.

[0013] In one embodiment, before the step of heating at least one of the semiconductor substrate structure and the metal thin film structure to the bonding temperature, the method further includes:

[0014] Placing the semiconductor substrate structure and the metal thin film structure in a vacuum environment.

[0015] In one embodiment, providing the semiconductor substrate structure and the metal thin film structure includes:

[0016] Providing a semiconductor substrate and a metal film layer;

[0017] Etching the semiconductor substrate to obtain the semiconductor substrate structure;

[0018] Forming alignment marks on the surfaces of the semiconductor substrate structure and the metal film layer;

[0019] Performing patterning on the metal film layer to obtain the metal thin film structure;

[0020] Bonding a partial surface of the semiconductor substrate structure to a partial surface of the metal thin film structure includes:

[0021] Aligning and arranging the semiconductor substrate structure and the metal thin film structure according to the alignment marks.

[0022] In one embodiment, the method for manufacturing the semiconductor device further includes:

[0023] Performing surface cleaning on the bonded metal thin film structure;

[0024] Performing patterning on the cleaned metal thin film structure.

[0025] In one embodiment, before the step of heating at least one of the semiconductor substrate structure and the metal thin film structure to the bonding temperature, the method further includes:

[0026] Performing surface cleaning on the semiconductor substrate structure and the metal thin film structure.

[0027] In one embodiment, the method for manufacturing the semiconductor device further includes:

[0028] Performing surface cleaning on the bonded semiconductor device;

[0029] Performing annealing on the cleaned semiconductor device.

[0030] In one embodiment, fixing the bonding state of the semiconductor substrate structure and the metal thin film structure includes:

[0031] Cool the bonded semiconductor substrate structure and the metal thin film structure; and / or,

[0032] Apply pressure to the bonded semiconductor substrate structure and the metal thin film structure.

[0033] In a second aspect of the embodiments of the present application, a semiconductor device is provided, which is prepared by using the preparation method of the semiconductor device described in any one of the above first aspects.

[0034] In one embodiment, the metal thin film structure of the semiconductor device includes a single-layer metal film layer; or,

[0035] The metal thin film structure of the semiconductor device includes multiple-layer metal film layers;

[0036] Wherein, the metal film layer includes a patterned metal structure.

[0037] The preparation method of the semiconductor device provided by the embodiments of the present application can improve the uniformity and preparation purity of the metal thin film structure by pre-forming the semiconductor substrate structure and the metal thin film structure. By heating the semiconductor substrate structure and the metal thin film structure, the metal thin film structure reaches a malleable state so that the metal thin film structure can be bonded to the semiconductor substrate structure. Thus, a semiconductor device with a metal film layer is formed by fixing the bonded state of the two. Therefore, through the above method, the preparation difficulty of the metal thin film in the semiconductor device can be reduced, the preparation time can be shortened, the preparation efficiency can be improved, the uniformity and preparation purity of the metal film layer can be improved, thereby the resistive parasitic parameters of the semiconductor device can be improved, the reliability and stability of the semiconductor device can be improved, and further the yield rate of the semiconductor device can be improved. Description of the Drawings

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following will briefly introduce the drawings required to be used in the description of the embodiments of the present application or related technologies. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

[0039] Figure 1 It is a schematic flowchart of a preparation method of a semiconductor device provided by an embodiment of the present application;

[0040] Figure 2 It is a schematic flowchart of the step of providing a semiconductor substrate structure and a metal thin film structure in a preparation method of a semiconductor device provided by an embodiment of the present application;

[0041] Figure 3Schematic structural diagram of a semiconductor substrate structure formed with alignment marks obtained by a method for manufacturing a semiconductor device provided in an embodiment of the present application;

[0042] Figure 4 Schematic structural diagram of a metal film layer formed with alignment marks obtained by a method for manufacturing a semiconductor device provided in an embodiment of the present application;

[0043] Figure 5 Schematic structural diagram of a metal thin film structure formed with alignment marks obtained by a method for manufacturing a semiconductor device provided in an embodiment of the present application;

[0044] Figure 6 Schematic top view structural diagram of a semiconductor device in a bonded state obtained by a method for manufacturing a semiconductor device provided in an embodiment of the present application;

[0045] Figure 7 Schematic structural diagram of a semiconductor device obtained by a method for manufacturing a semiconductor device provided in an embodiment of the present application;

[0046] Figure 8 Schematic structural diagram of a semiconductor substrate structure and a metal thin film structure provided by a method for manufacturing a semiconductor device provided in an embodiment of the present application;

[0047] Figure 9 Schematic structural diagram of a semiconductor substrate structure and a metal thin film structure in a bonded state provided by a method for manufacturing a semiconductor device provided in an embodiment of the present application;

[0048] Figure 10 Schematic structural diagram of a structure obtained by disposing a photoresist on the surface of a metal thin film structure by a method for manufacturing a semiconductor device provided in an embodiment of the present application;

[0049] Figure 11 Schematic structural diagram of a patterned metal thin film structure obtained by a method for manufacturing a semiconductor device provided in an embodiment of the present application;

[0050] Figure 12 Schematic structural diagram of an alloy structure obtained by a method for manufacturing a semiconductor device provided in an embodiment of the present application;

[0051] Figure 13 Schematic structural diagram of a semiconductor substrate structure and a metal film layer provided by a method for manufacturing a semiconductor device provided in an embodiment of the present application;

[0052] Figure 14 Schematic structural diagram of a metal thin film structure obtained by patterning a metal film layer by a method for manufacturing a semiconductor device provided in an embodiment of the present application;

[0053] Figure 15 Another schematic structural diagram of a semiconductor substrate structure and a metal thin film structure in a bonded state provided for a method of manufacturing a semiconductor device according to an embodiment of the present application;

[0054] Figure 16 A schematic structural diagram of a semiconductor device provided for an embodiment of the present application.

[0055] Explanation of reference numerals:

[0056] 100 - semiconductor substrate structure, 101 - first alignment mark, 102 - second alignment mark, 110 - step structure, 200 - metal thin film structure, 201 - metal film layer, 202 - patterned metal thin film structure, 300 - alloy structure, 400 - photoresist. Detailed implementation manners

[0057] To facilitate the understanding of the present application, the present application will be described more comprehensively below with reference to the relevant drawings. Embodiments of the present application are shown in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.

[0058] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which the present application belongs. The terms used in the specification of the present application herein are only for the purpose of describing specific embodiments and are not intended to limit the present application.

[0059] It should be understood that when an element or layer is referred to as being "on", "adjacent to", "connected to" or "coupled to" another element or layer, it can be directly on, adjacent to, connected or coupled to the other element or layer, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on", "directly adjacent to", "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and / or portions, these elements, components, regions, layers, doping types and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or portion from another element, component, region, layer, doping type or portion. Thus, without departing from the teachings of the present invention, the first element, component, region, layer, doping type or portion discussed below may be referred to as the second element, component, region, layer or portion; for example, the first doping type may be referred to as the second doping type, and similarly, the second doping type may be referred to as the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.

[0060] Spatial relationship terms such as "under", "below", "beneath", "underneath", "above", "over", etc. may be used herein to describe the relationship of one element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientation shown in the figures, spatial relationship terms also include different orientations of the device in use and operation. For example, if the device in the figures is flipped, an element or feature described as "under" or "beneath" or "underneath" another element or feature will be oriented "above" the other element or feature. Thus, the exemplary terms "under" and "beneath" can include both an upper and a lower orientation. In addition, the device may also include additional orientations (such as, rotated 90 degrees or other orientations), and the spatial descriptors used herein are to be interpreted accordingly.

[0061] As used herein, the singular forms "a", "an" and "the" may also include the plural forms unless the context clearly dictates otherwise. It should also be understood that the terms "comprises / comprising" or "has / have" etc. specify the presence of the stated features, integers, steps, operations, components, parts or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts or combinations thereof. At the same time, in this specification, the term "and / or" includes any and all combinations of the related listed items.

[0062] It should be noted that in the existing methods for fabricating semiconductor devices, methods such as evaporation coating, magnetron sputtering, and electroplating are usually used to grow metal thin films on the surface of semiconductor devices. However, when growing a relatively thick metal film layer, the existing fabrication methods are time-consuming, it is difficult to ensure the uniformity of the thin film, and target replacement is required during the fabrication process, which affects the fabrication efficiency of the device. In addition, the metal thin film during the growth process is easily oxidized, and the long growth process will further affect the film formation quality, and even cause the failure of the semiconductor device, affecting the yield rate of the semiconductor device.

[0063] Figure 1 FIG. is a schematic flow chart of a method for fabricating a semiconductor device provided by an embodiment of the present application. As Figure 1 shown, in a first aspect of the embodiment of the present application, a method for fabricating a semiconductor device is provided, including:

[0064] Step S110, providing a semiconductor substrate structure and a metal thin film structure.

[0065] Exemplarily, the material of the semiconductor substrate structure may include silicon, silicon nitride, gallium compounds, etc. The size of the semiconductor substrate structure may be two inches, four inches, six inches, eight inches, etc. The material of the metal thin film structure may include metal materials with good electrical conductivity, for example, gold, silver, copper, aluminum, etc. The thickness range of the metal thin film structure may be from 0.5 μm to 50 μm, the percentage range of thickness uniformity may be from 0 to 5%, and the metal purity is greater than 99.99%.

[0066] Exemplarily, surface treatment of the semiconductor substrate structure and the metal thin film structure can be performed through processes such as wet etching, ultrasonic cleaning, decontamination, surface planarization, mechanochemical polishing, and polishing.

[0067] Step S120, heating at least one of the semiconductor substrate structure and the metal thin film structure to a bonding temperature.

[0068] Exemplarily, the semiconductor substrate structure and the metal thin film structure can be heated simultaneously to shorten the heating time and improve the fabrication efficiency of the semiconductor device.

[0069] Step S130, bonding a partial surface of the semiconductor substrate structure with a partial surface of the metal thin film structure.

[0070] Exemplarily, surface bonding of the semiconductor substrate structure and the metal thin film structure can be achieved through adsorption methods such as electrostatic adsorption and strong magnetic adsorption.

[0071] Step S140, fixing the bonding state of the semiconductor substrate structure and the metal thin film structure.

[0072] Exemplarily, after the fitting state is fixed, the metal thin film structure can be patterned to form metal electrodes. A photoresist can be coated on the surface of the metal thin film structure away from the semiconductor substrate structure, and then the photoresist is exposed and developed to achieve patterning of the photoresist. The metal thin film structure can be patterned by processes such as electron beam exposure, etching, ion beam cutting, and laser etching to form a corresponding pattern of the metal thin film structure according to the patterned photoresist. After the patterning of the metal thin film structure is completed, the semiconductor device can be cleaned to remove the excess products formed during the patterning process and the photoresist residue.

[0073] In the manufacturing method of the semiconductor device provided by the embodiments of the present application, by pre-forming the semiconductor substrate structure and the metal thin film structure, the uniformity and manufacturing purity of the metal thin film structure can be improved. By heating the semiconductor substrate structure and the metal thin film structure, the metal thin film structure is brought to a malleable state so that the metal thin film structure can be fitted to the semiconductor substrate structure, and thus a semiconductor device with a metal film layer is formed by fixing the fitting state of the two. Therefore, through the above method, the manufacturing difficulty of the metal thin film in the semiconductor device can be reduced, the manufacturing time can be shortened, the manufacturing efficiency can be improved, the uniformity and manufacturing purity of the metal film layer can be improved, thereby the resistive parasitic parameters of the semiconductor device can be improved, the reliability and stability of the semiconductor device can be improved, and further the yield of the semiconductor device can be improved.

[0074] In some feasible embodiments, heating at least one of the semiconductor substrate structure and the metal thin film structure to the fitting temperature includes: heating the semiconductor substrate structure to the fitting temperature so that the metal thin film structure reaches a malleable state at the fitting temperature.

[0075] It should be noted that the malleable state of the metal thin film structure means that after the metal is heated, the metal thin film can be extended in the direction parallel to the extending surface of the metal thin film. Among them, the metal thin film can be uniformly extended by applying a force perpendicular to the surface of the metal thin film, or the metal thin film can be thermally expanded only by heating the metal thin film.

[0076] It should be noted that the heated metal thin film structure has a certain ductility. However, directly heating the metal thin film structure makes the heated metal thin film structure prone to wrinkling. At the same time, during the process of transferring the metal thin film structure, the heated metal thin film structure may further form wrinkles or partial adhesion. In addition, during the fixing stage of the bonding state, cooling or pressurizing the metal thin film structure may cause further deformation of the metal thin film structure. For example, the metal thin film structure may exhibit thermal expansion and contraction phenomena, or further extend after pressurization, resulting in a deviation between the surface uniformity and the prepared thickness of the metal thin film structure and the actual situation, affecting the yield of semiconductor devices.

[0077] It should be noted that the melting point of semiconductor materials is usually higher than that of metal materials. Therefore, under the condition of heating the semiconductor material to the bonding temperature, the semiconductor material will not deform.

[0078] Exemplarily, when the metal thin film structure is an aluminum structure, the range of the bonding temperature can be from 200°C to 400°C, for example, 200°C, 300°C, 400°C, etc.

[0079] Exemplarily, the metal thin film structure can be heated to a preset temperature, where the preset temperature is lower than the bonding temperature, and the metal thin film structure will not reach a state of being extensible under the preset structure. By preheating the metal thin film structure, before the metal thin film structure is extended, wrinkles or adhesion of the metal thin film structure before the bonding step can be avoided, the heat absorbed by the metal thin film structure during bonding can be reduced, the time required for the bonding step can be further shortened, and the preparation efficiency of the preparation method of semiconductor devices can be improved.

[0080] Exemplarily, when there are defects in the bonding between the metal thin film structure and the semiconductor substrate structure, such as wrinkles, adhesion, or the generation of bonding voids, etc., the bonding effect of the semiconductor device can be improved by pressurizing one of the metal thin film structure and the semiconductor substrate structure, or the defective position can be removed after the bonding state is fixed.

[0081] The method for manufacturing a semiconductor device provided by an embodiment of the present application can, by heating a semiconductor substrate structure, while maintaining the surface topography of the semiconductor substrate structure, transfer heat from the semiconductor substrate structure to a metal thin film structure when the semiconductor substrate structure is in contact with the metal thin film structure, so that the surface of the metal thin film structure on the side close to the semiconductor substrate structure reaches a malleable state. Then, according to the positional relationship between the metal thin film structure and the semiconductor substrate structure, the metal thin film structure can be directly attached to the semiconductor substrate structure, which is convenient for positioning and aligning the metal thin film structure and the semiconductor substrate structure, improving the stability and fitting accuracy during the fitting process, and also avoiding significant polishing of the semiconductor device after fixation, thereby reducing the loss during the manufacturing process. In addition, it can also prevent wrinkles or adhesion from occurring in the metal thin film structure after heating, avoid gaps between the semiconductor substrate structure and the metal thin film structure during the fitting process, and prevent further deformation of the metal thin film structure during the fixation process. Therefore, the reliability and stability of the semiconductor device can be improved, the surface topography of the semiconductor device can be improved, and the yield rate of the semiconductor device can be increased.

[0082] In some feasible embodiments, the fitting temperature is related to the melting point of the metal thin film structure and the softening temperature of the metal thin film structure.

[0083] Exemplarily, the fitting temperature is also related to the material of the semiconductor substrate structure, the material of the metal thin film structure, the bonding strength required for the fitting of the semiconductor substrate structure and the metal thin film structure, and the manufacturing requirements of the semiconductor device.

[0084] Exemplarily, the fitting temperature can be between the melting point and the softening temperature of the metal thin film structure.

[0085] The method for manufacturing a semiconductor device provided by an embodiment of the present application can determine the fitting temperature based on the melting point and the softening temperature of the metal thin film structure, enabling the metal thin film structure to reach a malleable state while avoiding melting of the metal thin film structure and re-cooling to form a film with too low surface topography quality. Thus, the surface topography of the semiconductor device can be improved, the fitting quality between the metal thin film structure and the semiconductor substrate structure can be enhanced, the time required for the heating stage and the fixation stage can be shortened, and the manufacturing efficiency and yield rate of the semiconductor device can be increased.

[0086] In some feasible embodiments, before the step of heating at least one of the semiconductor substrate structure and the metal thin film structure to the fitting temperature, it further includes: placing the semiconductor substrate structure and the metal thin film structure in a vacuum environment.

[0087] Exemplarily, the semiconductor substrate structure to be processed can be placed on a vacuum adsorption platform, and the environment can be evacuated to a vacuum state by a vacuum pump, where the air pressure in the vacuum environment is lower than 10 -5 Pa.

[0088] The manufacturing method of the semiconductor device provided by the embodiment of the present application can utilize the environmental pressure of the vacuum environment to improve the adsorption force between the semiconductor substrate structure and the metal thin film structure by completing the manufacturing processes of heating, bonding, and fixing in a vacuum environment. Thereby, the stability of the semiconductor substrate structure and the metal thin film structure during the bonding process can be improved, avoiding relative displacement between the two during the bonding process and affecting the bonding effect. Meanwhile, the vacuum environment can further prevent other gases or external water vapor from reacting with the semiconductor substrate structure and the metal thin film structure under high-temperature conditions, and thus can improve the purity of the semiconductor substrate structure and the metal thin film structure, improving the manufacturing quality and yield rate of the semiconductor device.

[0089] Figure 2 It is a schematic flowchart of the steps of providing a semiconductor substrate structure and a metal thin film structure in a manufacturing method of a semiconductor device provided by an embodiment of the present application. As Figure 2 shown, in some feasible embodiments, providing a semiconductor substrate structure and a metal thin film structure includes:

[0090] Step S210, providing a semiconductor substrate and a metal film layer.

[0091] Exemplarily, for a semiconductor substrate structure with a certain special structure or non-planar structure formed on its surface, it is usually obtained by etching a semiconductor substrate with a certain thickness. In order to improve the bonding effect between the semiconductor substrate structure and the metal thin film structure, and to meet the manufacturing requirements, the surface topography of the bonding surface of the metal thin film structure is usually formed according to the surface topography of the bonding surface of the semiconductor substrate structure. Therefore, the metal thin film structure can be obtained by etching the metal film layer. The thickness of the semiconductor substrate is usually greater than or equal to the maximum thickness of the semiconductor substrate structure, and the thickness of the metal film layer is usually greater than or equal to the maximum thickness of the metal thin film structure.

[0092] Step S220, etching the semiconductor substrate to obtain a semiconductor substrate structure.

[0093] As Figure 3 shown, the semiconductor substrate structure 100 has a step structure 110.

[0094] Exemplarily, the semiconductor substrate can be etched by etching processes such as dry etching and wet etching to form a semiconductor substrate structure that meets the size requirements of the semiconductor device.

[0095] Step S230, forming alignment marks on the surfaces of the semiconductor substrate structure and the metal film layer.

[0096] As Figure 3 and Figure 4As shown, a first alignment mark 101 is formed on the surface of the semiconductor substrate structure 100, and a second alignment mark 102 is formed on the surface of the metal film layer 201. The first alignment marks 101 and the second alignment marks 102 correspond to each other one by one.

[0097] Exemplarily, alignment marks can be formed on the bonding surfaces of the semiconductor substrate structure and the metal thin film structure respectively through processes such as laser marking and ion beam etching.

[0098] Step S240: Pattern the metal film layer to obtain the metal thin film structure.

[0099] As Figure 5 shown, pattern the metal film layer 201 to form the metal thin film structure 200 corresponding to the step structure 110.

[0100] Exemplarily, the metal film layer can be patterned through processes such as laser cutting, dry etching, and wet etching, and the edges of the patterned metal thin film structure can be polished and cleaned, etc., to avoid introducing new impurities during the heating and bonding stages.

[0101] As Figure 6 shown, bond a partial surface of the semiconductor substrate structure to a partial surface of the metal thin film structure, including: align the semiconductor substrate structure and the metal thin film structure according to the alignment marks.

[0102] Exemplarily, the position and orientation of the semiconductor substrate structure and the metal thin film structure can be adjusted according to the correspondence between the alignment marks located on different surfaces until the alignment marks completely correspond, and then the metal thin film structure is disposed on the surface of the semiconductor substrate structure.

[0103] Exemplarily, in the case where one of the semiconductor substrate structure and the metal thin film structure has a patterning requirement, the alignment marks can be set first, and then the setting can be performed according to the alignment marks after patterning. In the case where neither the semiconductor substrate structure nor the metal thin film structure has a patterning requirement, the alignment marks can also be set first, and the positional relationship between the two can be set according to the alignment marks to maximize the bonding area, improve the bonding accuracy, reduce the polishing requirement of the finished product, and reduce the preparation loss.

[0104] Figure 7 This is a schematic structural diagram of a semiconductor device obtained by the semiconductor device preparation method provided in the embodiments of the present application. As Figure 7 shown, the semiconductor device includes a semiconductor substrate structure 100 and a metal thin film structure 200.

[0105] In the method for manufacturing a semiconductor device provided by an embodiment of the present application, when there are requirements for the shapes and installation positions of the semiconductor substrate structure 100 and the metal thin film structure 200 according to the manufacturing requirements of the semiconductor device, by first setting alignment marks and then aligning the patterned semiconductor substrate structure 100 with the metal thin film structure 200, the bonding difficulty can be reduced, the accuracy of the bonding position can be improved, and thus the manufacturing quality of the semiconductor device can be enhanced.

[0106] In some feasible embodiments, the method for manufacturing a semiconductor device further includes: performing surface cleaning on the bonded metal thin film structure; performing patterning on the cleaned metal thin film structure.

[0107] Exemplarily, holes can be drilled or other processing can be performed on the cleaned metal thin film structure to obtain metal through holes for realizing metal interconnection of the semiconductor device.

[0108] In the method for manufacturing a semiconductor device provided by an embodiment of the present application, by performing surface cleaning and patterning on the bonded metal thin film structure, the application scenarios of the semiconductor device can be increased, and thus the practicality of the semiconductor device can be improved.

[0109] In some feasible embodiments, before the step of heating at least one of the semiconductor substrate structure and the metal thin film structure to the bonding temperature, it further includes: performing surface cleaning on the semiconductor substrate structure and the metal thin film structure.

[0110] Exemplarily, the semiconductor substrate structure 100 and the metal thin film structure 200 can be surface-treated by processes such as wet etching, ultrasonic cleaning, decontamination, and chemical mechanical polishing.

[0111] In the method for manufacturing a semiconductor device provided by an embodiment of the present application, by performing surface cleaning on the semiconductor substrate structure and the metal thin film structure before the heating process, oxides on the surfaces of the semiconductor substrate structure and the metal thin film structure, as well as residues of other materials in the previous manufacturing process, such as photoresist, can be removed. The purity of the bonding surface can be improved, the adhesion ability of the bonding surface can be enhanced, the bonding effect between the semiconductor substrate structure and the metal thin film structure can be strengthened, cracking can be avoided, the reliability of the semiconductor device can be improved, the contact quality between the semiconductor substrate structure and the metal thin film structure can be enhanced, the parasitic resistance of the bonding surface can be reduced, the electrical performance of the semiconductor device can be improved, and the yield rate of the semiconductor device can be increased.

[0112] In some feasible embodiments, the method for manufacturing a semiconductor device further includes: performing surface cleaning on the bonded semiconductor device; performing annealing on the cleaned semiconductor device.

[0113] Refer to Figure 7, an anneal treatment can be performed on the cleaned metal thin film structure to obtain an alloy structure 300.

[0114] In the manufacturing method of the semiconductor device provided by the embodiment of the present application, by performing an anneal treatment on the bonded semiconductor device, the stress generated during the bonding process can be eliminated, and an alloy can be formed on the bonding surface at the annealed part to achieve ohmic contact, reduce the parasitic resistance of the bonding surface, improve the electrical performance of the semiconductor device, and increase the yield rate of the semiconductor device.

[0115] In some feasible embodiments, fixing the bonding state of the semiconductor substrate structure and the metal thin film structure includes: cooling the bonded semiconductor substrate structure and metal thin film structure.

[0116] Exemplarily, the cooling of the bonding can be achieved by natural cooling or reducing the ambient temperature. Among them, when reducing the ambient temperature, the influence of temperature on the brittleness of the semiconductor substrate structure 100 and the metal thin film structure 200 needs to be considered to avoid the disconnection of the semiconductor substrate structure 100 and the metal thin film structure 200 during the cooling process, which affects the yield rate of the semiconductor device. Also, the characteristics of thermal expansion and contraction of the metal thin film structure 200 need to be considered to avoid the metal thin film structure 200 deforming again due to too low temperature, which affects the yield rate of the semiconductor device.

[0117] In the manufacturing method of the semiconductor device provided by the embodiment of the present application, by fixing the bonding state through cooling, the risk of relative displacement between the semiconductor substrate structure 100 and the metal thin film structure 200 during the fixing process can be reduced, the surface morphology of the semiconductor substrate structure 100 and the metal thin film structure 200 will not be affected, the bonding area can be increased, the manufacturing efficiency can be improved, the fixing cost can be saved, the fixing time can be shortened, the fixing difficulty can be reduced, and the yield rate and the good product rate of the semiconductor device can be increased.

[0118] In some feasible embodiments, fixing the bonding state of the semiconductor substrate structure and the metal thin film structure includes: applying pressure to the bonded semiconductor substrate structure and metal thin film structure.

[0119] Exemplarily, the fixing of the bonding can be achieved by changing the ambient pressure in the fixing chamber or using a pressing machine, etc.

[0120] In the manufacturing method of the semiconductor device provided by the embodiment of the present application, by fixing the bonding state through pressurization, the bubbles between the bonding surfaces of the semiconductor substrate structure 100 and the metal thin film structure 200 can be further discharged, the bonding quality can be improved, the surface flatness of the semiconductor device can be increased, and thus the yield rate of the semiconductor device can be increased.

[0121] Exemplarily, provide as Figure 8The semiconductor substrate structure 100 and the metal thin film structure 200 shown can be subjected to surface cleaning treatment to improve the surface bonding ability of the semiconductor substrate structure 100 and the metal thin film structure 200. The metal thin film structure 200 can be heated to a relatively high bonding temperature, and a part of the surfaces of the semiconductor substrate structure 100 and the metal thin film structure 200 can be bonded. The bonding state of the semiconductor substrate structure 100 and the metal thin film structure 200 can be fixed by natural cooling or applying an external pressure to obtain a structure as shown in Figure 9 A structure as shown can be obtained by forming a photoresist 400 on the side of the metal thin film structure 200 away from the semiconductor substrate structure 100, to achieve patterning of the metal thin film structure 200 and obtain a patterned metal thin film structure 202 as shown in Figure 10 The semiconductor device after patterning can be annealed to form an alloy structure 300 as shown in Figure 11 Shown. Figure 12 Shown.

[0122] Exemplarily, a semiconductor substrate structure 100 with a step structure 110 and a metal film layer 201 as shown in Figure 13 are provided. According to the step structure 110, the metal film layer 201 is patterned to obtain a metal thin film structure 200 as shown in Figure 14 Shown. The semiconductor substrate structure 100 and the metal thin film structure 200 are subjected to surface cleaning treatment to improve the surface bonding ability of the semiconductor substrate structure 100 and the metal thin film structure 200. The metal thin film structure 200 can be heated to a relatively high bonding temperature, and a part of the surfaces of the semiconductor substrate structure 100 and the metal thin film structure 200 can be bonded. The bonding state of the semiconductor substrate structure 100 and the metal thin film structure 200 can be fixed by natural cooling or applying an external pressure to obtain a structure in the bonded state as shown in Figure 15 Shown. The semiconductor device can be annealed to form an alloy structure 300 as shown in Figure 7 Shown.

[0123] Figure 16 This is a schematic structural diagram of a semiconductor device provided by an embodiment of the present application. In the second aspect of the embodiment of the present application, a semiconductor device is provided, which is prepared by using the preparation method of any one of the semiconductor devices in the above first aspect.

[0124] As shown in Figure 16 Shown, the semiconductor device includes a semiconductor substrate structure 100, a metal thin film structure 200, and an alloy structure 300.

[0125] The semiconductor device provided by the embodiment of the present application can improve the uniformity and preparation purity of the metal thin film structure 200 by pre-forming the semiconductor substrate structure 100 and the metal thin film structure 200. By heating the semiconductor substrate structure 100 and the metal thin film structure 200, the metal thin film structure 200 is brought to a malleable state so that the metal thin film structure 200 can be attached to the semiconductor substrate structure 100. Thus, a semiconductor device with a metal film layer is formed by fixing the attached state of the two. Therefore, the above semiconductor device has a metal thin film structure 200 with uniformity and preparation purity, which can reduce the resistive parasitic parameters of the semiconductor device, improve the reliability and stability of the semiconductor device, and further improve the yield of the semiconductor device.

[0126] In some feasible embodiments, the metal thin film structure 200 of the semiconductor device includes a single-layer metal film layer; or, the metal thin film structure 200 of the semiconductor device includes a multi-layer metal film layer; wherein, the metal film layer includes a patterned metal structure.

[0127] Exemplarily, in the case where the metal thin film structure 200 includes a multi-layer metal film layer, the multi-layer metal film layer can be formed by different metal materials, or is formed by stacking film layers of the same material but with different patterned patterns.

[0128] The semiconductor device provided by the embodiment of the present application can be used to form the metal electrode of the semiconductor device, and can also be used for the interconnection of metal leads between different film layers in the semiconductor device, realizing metal interconnection in the horizontal and vertical directions, improving the practicability and convenience of the semiconductor device, thereby improving the electrical performance of the semiconductor device, and improving the stability and reliability of the semiconductor device.

[0129] In the description of this specification, the descriptions referring to terms such as "some embodiments", "other embodiments", "ideal embodiments", etc. mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0130] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0131] The above-described embodiments merely represent several implementation manners of the present application. The description thereof is relatively specific and detailed, but it should not be construed as a limitation to the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all fall within the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.

Claims

1. A method for preparing a semiconductor device, characterized in that: include: Providing a semiconductor substrate structure and a metal film structure; heating at least one of the semiconductor substrate structure and the metal thin film structure to a bonding temperature; Aligning a portion of the surface of the semiconductor substrate structure with a portion of the surface of the metal film structure; Fixing the bonding state between the semiconductor substrate structure and the metal film structure; Wherein, providing a semiconductor substrate structure and a metal film structure comprises: Providing a semiconductor substrate and a metal film layer; Etching the semiconductor substrate to obtain the semiconductor substrate structure; forming alignment marks on the surfaces of the semiconductor substrate structure and the metal film layer; Performing a patterning process on the metal film layer to obtain the metal film structure; Wherein, the step of laminating a portion of the surface of the semiconductor substrate structure with a portion of the surface of the metal film structure comprises: The semiconductor substrate structure and the metal film structure are aligned and arranged according to the alignment mark.

2. The method for preparing a semiconductor device according to claim 1, wherein: The step of heating at least one of the semiconductor substrate structure and the metal film structure to a bonding temperature comprises: The semiconductor substrate structure is heated to the bonding temperature so that the metal film structure reaches a ductile state at the bonding temperature.

3. The method for preparing a semiconductor device according to claim 1, characterized in that: The bonding temperature is related to the melting point of the metal film structure and the softening temperature of the metal film structure.

4. The method for preparing a semiconductor device according to claim 1, wherein: Before the step of heating at least one of the semiconductor substrate structure and the metal film structure to the bonding temperature, the method further includes: The semiconductor substrate structure and the metal film structure are placed in a vacuum environment.

5. The method for preparing a semiconductor device according to claim 1, characterized in that: Also includes: Cleaning the surface of the metal film structure after bonding; The cleaned metal film structure is patterned.

6. The method for preparing a semiconductor device according to claim 1, wherein: Before the step of heating at least one of the semiconductor substrate structure and the metal film structure to the bonding temperature, the method further includes: The semiconductor substrate structure and the metal film structure are surface cleaned.

7. The method for preparing a semiconductor device according to claim 1, characterized in that: Also includes: Cleaning the surface of the semiconductor device after bonding; The cleaned semiconductor device is annealed.

8. The method for preparing a semiconductor device according to claim 1, characterized in that: The fixing of the bonding state between the semiconductor substrate structure and the metal film structure comprises: Cooling the bonded semiconductor substrate structure and the metal film structure; and / or, Applying pressure to the bonded semiconductor substrate structure and the metal film structure.

9. A semiconductor device, characterized in that The semiconductor device is prepared by the method for preparing the semiconductor device according to any one of claims 1 to 8.

10. The semiconductor device according to claim 9, characterized in that The metal film structure includes a single metal film layer; or, The metal film structure includes multiple metal film layers; Wherein, the metal film layer includes a patterned metal structure.

Images