A high work function pd electrode contacted ga2o3 solar blind ultraviolet photodetector and a preparation method thereof

Abstract

The application discloses a high work function Pd electrode contact Ga2O3 solar blind ultraviolet photodetector and a preparation method thereof, and relates to the technical field of photodetectors.The solar blind ultraviolet photodetector comprises a substrate, a Ga2O3 film and a Pd electrode.The solar blind ultraviolet photodetector with the high work function Pd electrode contact grows an inch-level large-area Ga2O3 film, and uses a high-vacuum electron beam composite thermal evaporation plating equipment to evaporate a Pd electrode on the Ga2O3 film, so that the solar blind ultraviolet photodetector has an extremely low dark current and still has excellent photoelectric response under low light power density.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of photoelectric detectors, in particular to a Ga2O3 solar blind ultraviolet photodetector with a high work function Pd electrode contact and a preparation method thereof. BACKGROUND

[0002] Solar blind ultraviolet photodetectors (SBPDs) are widely used in missile tracking, fire alarm, corona monitoring, ozone hole detection, offshore oil testing, biological detection and encrypted communication because of their low background noise, good reliability, high safety and low false alarm rate. Among wide bandgap semiconductors (GaN, AlGaN, SiC, diamond, hBN, BiOCl, Ga2O3, etc.), Ga2O3 stands out with the following great advantages. It has an ultra-wide bandgap (4.5-5.3 eV), which directly corresponds to the solar blind band; it has excellent sensitivity in the solar blind band; its large-size single crystal can be mass-produced at low cost by the melting method; it has a high breakdown voltage, an ultra-high power quality factor, a low on-voltage, an ultra-low specific on-resistance and good stability. Therefore, Ga2O3 is considered to be the most potential candidate material for the next generation of power electronics and SBPDs.

[0003] Ga2O3 has five different crystal structures: alpha, beta, gamma, delta and epsilon phases. Among them, the beta phase has a monoclinic crystal structure, and its thermodynamic properties are the most stable, and the other alpha, gamma and epsilon phases are all metastable phases, and the delta phase is an unstable phase. Because gallium oxide has a structure similar to other wide-bandgap materials (such as ZnO and AlN), it is often used to prepare gallium oxide photodetectors. However, the current gallium oxide photodetectors have the disadvantages of large device dark current, poor photoelectric response and the like.

[0004] The main growth methods of epitaxial thin films are molecular beam epitaxy (MBE), laser pulse deposition (PLD), magnetron sputtering (RFMS), hydride vapor phase epitaxy (HVPE), mist chemical vapor deposition (Mist-CVD), atomic layer deposition (ALD), and metal organic chemical vapor deposition (MOCVD). Among them, MOCVD epitaxial growth of thin films has the advantages of wide application range, almost all compounds can be grown; thin film thickness can be controlled, suitable for ultra-thin film preparation; composition and doping concentration can be controlled; high purity, good uniformity; suitable for growth of large-size thin films, etc. Suitable for growing large-area high-quality gallium oxide thin films, and the beta phase Ga2O3 can be directly grown by MOCVD method without using post-annealing process to convert it from other phases to beta phase. However, the gallium oxide solar blind ultraviolet photodetector prepared by the MOCVD method still has the disadvantages of high dark current and poor photoelectric current response.

[0005] Based on the above reasons, the present application is proposed. SUMMARY

[0006] Based on the above reasons, in view of the problems or defects in the prior art, the purpose of the present application is to provide a high work function Pd electrode contact Ga2O3 solar blind ultraviolet photodetector and a preparation method thereof, which solves or at least partially solves the above technical defects in the prior art: the present application introduces a high work function electrode Pd contact, which can solve the pinning problem of Fermi level through a clean metal-semiconductor interface, effectively reduce the dark current of the device, obtain better solar blind ultraviolet photoelectric response, and improve the photoelectric performance of the solar blind ultraviolet photodetector.

[0007] In order to achieve the above first purpose of the present application, the technical solution adopted by the present application is as follows:

[0008] A high work function Pd electrode contact Ga2O3 solar blind ultraviolet photodetector comprises:

[0009] An insulating substrate;

[0010] A large-area Ga2O3 thin film, which is located on the insulating substrate;

[0011] A high work function Pd electrode, which is located on the Ga2O3 thin film.

[0012] Further, in the above technical solution, the insulating substrate can use a c-sapphire substrate or an insulating Si substrate.

[0013] Further, in the above technical solution, in a preferred embodiment of the present application, the diameter of the Ga2O3 thin film is 2 inches.

[0014] Specifically, in the above technical solution, the work function (work function) is also called work function, escape work, which is defined in solid physics as: the minimum energy required to move an electron from the interior of a solid to the surface of the object.

[0015] A high work function will raise the energy level of the metal surface and reduce the formation of surface states, and a high work function metal electrode contact can exhibit high impedance, thereby obtaining a high-quality metal-semiconductor contact. The current mainstream literature on high work function metals mainly refers to metals with a work function greater than 5 eV, and Pd is 5.12 eV.

[0016] Further, in the above technical solution, the Pd electrode is an array composed of multiple electrodes, which can be located at both ends of the Ga2O3 thin film or uniformly distributed on the surface of the entire Ga2O3 thin film. In an embodiment of the present application, the high work function Pd electrode is an 8x8 array.

[0017] Further, in the above technical solution, the thickness of the Pd electrode is 50-80 nm.

[0018] The second object of the present application is to provide a preparation method of the high work function Pd electrode contacted Ga2O3 solar blind ultraviolet photodetector as described above, which specifically comprises the following steps:

[0019] An insulating substrate is provided and pretreated;

[0020] A large-area Ga2O3 film is prepared on the pretreated substrate surface, and the Ga2O3 film is then pretreated;

[0021] A high work function Pd electrode contact is prepared on the Ga2O3 film.

[0022] Further, in the above technical solution, the insulating substrate can be a c-sapphire substrate or an insulating Si substrate.

[0023] Further, in the above technical solution, the pretreatment method comprises the following steps:

[0024] The substrate is sequentially placed in acetone, anhydrous ethanol and deionized water, and is ultrasonically cleaned, and then dried in nitrogen for standby.

[0025] Further, in the above technical solution, the ultrasonic cleaning time is 10-30 min. In a preferred embodiment of the present application, the ultrasonic cleaning time is 20 min.

[0026] Further, in the above technical solution, the large-area Ga2O3 film is prepared by an MOCVD method.

[0027] Further, in the above technical solution, in a preferred embodiment of the present application, the preparation method of the large-area Ga2O3 film specifically comprises the following steps:

[0028] The cleaned substrate is placed in the chamber of an MOCVD device, the MOCVD growth temperature is set to 800℃, the reaction chamber pressure is 40 torr, the Mo source is triethyl gallium, the carrier gas is nitrogen 200 sccm, the oxygen is 3000 sccm, the growth rate is 180-200 nm / h, and the growth time is 1 h.

[0029] Further, in the above technical solution, the pretreatment method of the Ga2O3 film is the same as the pretreatment method of the substrate, and specifically comprises the following steps:

[0030] The Ga2O3 film is sequentially placed in acetone, anhydrous ethanol and deionized water, and is ultrasonically cleaned, and then the Ga2O3 film is placed in deionized water to isolate the air and other impurities from contaminating the surface.

[0031] Further, the ultrasonic cleaning time is 10-30 min. In a preferred embodiment of the application, the ultrasonic cleaning time is 20 min.

[0032] Specifically, the Ga2O3 thin film is pretreated to make the surface clean to obtain better electrode contact.

[0033] Further, the Ga2O3 thin film is pretreated to make the surface clean to obtain better electrode contact.

[0034] The insulating substrate loaded with the surface-cleaned gallium oxide thin film is placed in a coating machine, vacuumized, and Pd is coated on the Ga2O3 thin film by electron beam thermal evaporation coating, and the mask is removed after coating is completed.

[0035] Further, the Ga2O3 thin film is pretreated to make the surface clean to obtain better electrode contact.

[0036] The mechanism of the application is as follows:

[0037] Since Pd has a work function as high as 5.12 eV, the valence band spectrum of the gallium oxide thin film prepared by MOCVD is measured by XPS, the valence band maximum (VBM) extracted by linear extrapolation method is 1.08 eV, the band gap (E g ) of gallium oxide is 4.9 eV, the electron affinity (Χ) is 4 eV, and the Fermi level of gallium oxide is about the middle position of the band gap when undoped, that is, the surface energy band of gallium oxide and the high work function Pd electrode contact will be bent upward by 1.37 eV together with VBM and CBM, the interface contact electron potential barrier is 2.49 eV, and the large electron potential barrier makes the device have lower dark current.

[0038] The Ga2O3 solar blind ultraviolet photodetector and method with high work function Pd electrode contact of the application have the following beneficial effects compared with the prior art:

[0039] The application discloses a high work function Pd electrode contact type solar blind ultraviolet photodetector. BRIEF DESCRIPTION OF DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained from these drawings without any creative effort.

[0041] Figure 1 A structure diagram of the high work function Pd electrode contact type Ga2O3 solar blind ultraviolet photodetector of the present application;

[0042] Figure 2 A large-area (2 inches) gallium oxide film physical map of the Ga2O3 solar blind ultraviolet photodetector prepared in the embodiment 1 of the present application;

[0043] Figure 3 An optical microscope map of the high work function Pd electrode contact type solar blind ultraviolet photodetector prepared in the embodiment 1 of the present application;

[0044] Figure 4 An optical microscope map of the 8*8 high work function Pd electrode contact type solar blind ultraviolet photodetector array prepared in the embodiment 1 of the present application.

[0045] Figure 5 An XPS valence band map of the Ga2O3 prepared in the embodiment 1 of the present application;

[0046] Figure 6 A band diagram of the high work function Pd electrode contact type Ga2O3 prepared in the embodiment 1 of the present application;

[0047] Figure 7 A noise current of the high work function Pd electrode contact type Ga2O3 solar blind ultraviolet photodetector prepared in the embodiment 1 of the present application;

[0048] Figure 8The Ga2O3 solar blind ultraviolet photodetector with high work function Pd electrode contact prepared in embodiment 1 of the present application is compared in terms of light dark voltage-current characteristic curves under the condition of no 255 nm ultraviolet light and different light intensities of 255 nm ultraviolet light;

[0049] Figure 9 The Ga2O3 solar blind ultraviolet photodetector with high work function Pd electrode contact prepared in embodiment 1 of the present application is compared in terms of responsivity under different light intensities;

[0050] Figure 10 The Ga2O3 solar blind ultraviolet photodetector with high work function Pd electrode contact prepared in embodiment 1 of the present application is compared in terms of responsivity under different light intensities;

[0051] Figure 11 The Ga2O3 solar blind ultraviolet photodetector with high work function Pd electrode contact prepared in embodiment 1 of the present application is compared in terms of responsivity under different light intensities;

[0052] Figure 12 The Ga2O3 solar blind ultraviolet photodetector with high work function Pd electrode contact prepared in embodiment 1 of the present application is compared in terms of responsivity under different light intensities. DETAILED DESCRIPTION

[0053] The present application provides a Ga2O3 solar blind ultraviolet photodetector with high work function Pd electrode contact and a preparation method thereof. The solar blind ultraviolet photodetector comprises a substrate, a Ga2O3 thin film and a Pd electrode. The Ga2O3 solar blind ultraviolet photodetector with high work function Pd electrode contact grows an inch-level large-area Ga2O3 thin film, and uses a high-vacuum electron beam composite thermal evaporation plating equipment to evaporate a Pd electrode thereon, so that the Ga2O3 solar blind ultraviolet photodetector has extremely low dark current and still has excellent photoelectric response under low light power density.

[0054] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0055] The present application provides a Ga2O3 solar blind ultraviolet photodetector with high work function Pd electrode contact, as shown in Figure 1 , comprising:

[0056] an insulating substrate;

[0057] a Ga2O3 thin film;

[0058] High work function Pd electrode contact.

[0059] It should be noted that the Ga2O3 solar blind ultraviolet photodetector with high work function Pd electrode contact provided in the present application comprises an insulating substrate, a large-area Ga2O3 thin film located on the insulating substrate, and two high work function Pd electrodes located on the Ga2O3 thin film, so that the solar blind ultraviolet photodetector device has a lower dark current, a faster response speed, and a higher on-off ratio under low light intensity.

[0060] Based on the same inventive concept, the present application also provides a preparation method of a Ga2O3 solar blind ultraviolet photodetector with high work function Pd electrode contact, comprising the following steps:

[0061] S1, providing an insulating substrate;

[0062] S2, preparing a large-area Ga2O3 thin film;

[0063] S3, preparing a high work function Pd electrode contact.

[0064] It should be noted that the preparation method of the Ga2O3 solar blind ultraviolet photodetector with high work function Pd electrode contact in the present application comprises the following steps: preparing a large-area gallium oxide thin film on the insulating substrate by MOCVD, cleaning the gallium oxide thin film to obtain a clean electrode contact, and finally rapidly and batch evaporating Pd metal on the gallium oxide thin film by electron beam evaporation to obtain a clean Pd-Ga2O3 interface. The main connection relationship of the Ga2O3 solar blind ultraviolet photodetector with high work function Pd electrode contact in the present application is a two-terminal MSM structure device: Pd electrode-Ga2O3 thin film-Pd electrode.

[0065] In some embodiments, before the insulating substrate is subjected to MOCVD deposition, the insulating substrate is further subjected to ultrasonic treatment with acetone, anhydrous ethanol and deionized water for 20 minutes, respectively, to remove impurities on the insulating substrate.

[0066] In some embodiments, the insulating substrate can be a c-sapphire substrate or an insulating Si substrate.

[0067] In some embodiments, the insulating substrate is subjected to MOCVD deposition of a gallium oxide thin film. Specifically, the cleaned substrate is placed in the chamber of the MOCVD equipment, the MOCVD growth temperature is set to 800℃, the reaction chamber pressure is 40 torr, the Mo source is triethyl gallium, the carrier gas is nitrogen 200sccm, the oxygen is 3000sccm, the growth rate is 180-200nm / h, and the growth time is 1h.

[0068] In some embodiments, the method for preparing the high work function Pd electrode contacted Ga2O3 solar blind ultraviolet photodetector includes the following steps: S1, providing an insulating substrate, such as a c-plane sapphire; S2, cleaning the insulating substrate in acetone, anhydrous ethanol and deionized water for 20 minutes; S3, placing the cleaned substrate in a chamber of a MOCVD device; S4, setting the MOCVD growth temperature to 800 DEG C, the reaction chamber pressure to 40 torr, the Mo source to triethyl gallium, the carrier gas to nitrogen 200 sccm, and the oxygen to 3000 sccm; S5, growing the Ga2O3 film at a growth rate of 180-200 nm / h for 1 h to obtain a Ga2O3 film with a diameter of 2 inches and a thickness of 200 nm; S6, pre-treating the Ga2O3 film to make the surface clean to obtain better electrode contact; S7, placing the film in deionized water after cleaning to isolate the air and other impurities from polluting the surface; S8, covering a customized metal mask on the insulating substrate containing the Ga2O3 film and fixing it with a high-temperature resistant adhesive tape; S9, placing the c-plane sapphire substrate containing the Ga2O3 film with a clean surface in an electron beam composite thermal evaporation film coating machine, pre-evacuating for 4 hours, and waiting until the vacuum degree reaches 3e

[0069] In some embodiments, the c-plane sapphire substrate containing the Ga2O3 film with a clean surface is placed in an electron beam composite thermal evaporation film coating machine, pre-evacuated for 4 hours, and waited until the vacuum degree reaches 3e -5 Then, Pd is coated on the Ga2O3 film by electron beam thermal evaporation film coating, the mask is removed after the film coating is completed, and the preparation of the high work function Pd electrode contacted Ga2O3 solar blind ultraviolet photodetector is completed.

[0070] The following further illustrates the method for preparing the solar blind ultraviolet photodetector of the application with specific embodiments. In the following embodiments, the insulating substrate c-plane sapphire is purchased from the market.

[0071] Embodiment 1

[0072] The embodiment of the application provides a method for preparing a high work function Pd electrode contacted Ga2O3 solar blind ultraviolet photodetector, which comprises the following steps:

[0073] S1, providing an insulating substrate, such as a c-plane sapphire; cleaning the insulating substrate in acetone, anhydrous ethanol and deionized water for 20 minutes, and reserving;

[0074] S2, placing the cleaned substrate in a chamber of a MOCVD device; setting the MOCVD growth temperature to 800 DEG C, the reaction chamber pressure to 40 torr, the Mo source to triethyl gallium, the carrier gas to nitrogen 200 sccm, and the oxygen to 3000 sccm; growing the Ga2O3 film at a growth rate of 180-200 nm / h for 1 h to obtain a Ga2O3 film with a diameter of 2 inches and a thickness of 200 nm.

[0075] S3, pre-treating the Ga2O3 film to make the surface clean to obtain better electrode contact; placing the film in deionized water after cleaning to isolate the air and other impurities from polluting the surface.

[0076] S4, covering a customized metal mask on the insulating substrate containing the Ga2O3 film and fixing it with a high-temperature resistant adhesive tape;

[0077] S5, placing the c-plane sapphire substrate containing the Ga2O3 film with a clean surface in an electron beam composite thermal evaporation film coating machine, pre-evacuating for 4 hours, and waiting until the vacuum degree reaches 3e -5Afterwards, Pd is plated on the gallium oxide film by electron beam thermal evaporation, the mask is removed after plating, and the preparation of the Ga2O3 solar blind ultraviolet photodetector with high work function Pd electrode contact is completed. 2 .

[0078] Performance test

[0079] Figure 2 A large-area (2 inches) gallium oxide film physical map of the Ga2O3 solar blind ultraviolet photodetector prepared in Example 1 of the application.

[0080] Figure 3 An optical microscope map of the solar blind ultraviolet photodetector with high work function Pd electrode contact prepared in Example 1 of the application.

[0081] Figure 4 An optical microscope map of the 8x8 solar blind ultraviolet photodetector array with high work function Pd electrode contact prepared in Example 1 of the application.

[0082] Figure 5 An XPS valence band map of Ga2O3 prepared in Example 1 of the application, and the valence band maximum (VBM) extracted by linear extrapolation is 1.08 eV.

[0083] Figure 6 A band diagram of Ga2O3 with high work function Pd electrode contact prepared in Example 1 of the application, the band gap (E g ) of gallium oxide is 4.9 eV, the electron affinity (Χ) is 4 eV, and the Fermi level of gallium oxide is about the middle position of the band gap when undoped, that is, the surface energy band will bend upward by 1.37 eV together with VBM and CBM when gallium oxide is in contact with high work function Pd electrode, and the electron potential barrier of the interface contact is 2.49 eV, and the large electron potential barrier makes the device have lower dark current.

[0084] Figure 7 The noise current of the Ga2O3 solar blind ultraviolet photodetector with high work function Pd electrode contact prepared in Example 1 of the application. The noise of the photodetector is a crucial parameter affecting its weak light recognition ability, and the lower pink dashed line is the shot noise limit (I shot ), which is about 5.58x10 -16 A / Hz 1 / 2 , and the extremely low shot noise limit ensures the inhibition effect of the device on low dark current and ensures the solar blind ultraviolet photodetection ability of the device under weak light conditions.

[0085] Figure 8 The comparison chart of the light-dark voltage-current characteristic curves of the high work function Pd electrode contacted Ga2O3 solar blind ultraviolet photodetector prepared in Example 1 of the present application under the conditions of no 255 nm ultraviolet light and different light intensity of 255 nm ultraviolet light. The dark current of the device is 9.74 x 10 -13 A under the bias of 1.25 V. -9 A, and the on-off ratio is 3764.

[0086] Figure 9 The responsivity chart of the high work function Pd electrode contacted Ga2O3 solar blind ultraviolet photodetector prepared in Example 1 of the present application under different light intensity. The responsivity data is calculated by the light-dark data in Figure 8 , and the responsivity is still 11.77 A / W when the light intensity is as low as 300 nW / cm 2 .

[0087] Figure 10 The detectivity chart of the high work function Pd electrode contacted Ga2O3 solar blind ultraviolet photodetector prepared in Example 1 of the present application under different light intensity. The detectivity is calculated by the noise current in Figure 7 and the photocurrent in Figure 8 , and the noise equivalent power also involves the influence of the detection area and the bandwidth, which can better quantitatively represent the high and low of the signal-to-noise ratio. The detectivity is as high as 2.43 x 10 14 Jones when the light intensity is as low as 300 nW / cm 2 .

[0088] Figure 11 The linear dynamic range chart of the high work function Pd electrode contacted Ga2O3 solar blind ultraviolet photodetector prepared in Example 1 of the present application. The linear dynamic range is generally determined by the photocurrent, dark current and incident light power intensity of the photodetector, and is 60 dB, and the linear dynamic range of the front device is good.

[0089] Figure 12 The light-dark time-current characteristic curve chart of the high work function Pd electrode contacted Ga2O3 solar blind ultraviolet photodetector prepared in Example 1 of the present application under the conditions of no 255 nm ultraviolet light and 255 nm ultraviolet light, which is divided into the rise time (t r ) and the fall time (t d). Wherein the rise time is defined as the time required for the photocurrent to rise from 10% to 90% of the maximum value under the condition of applying light, and the fall time is defined as the time required for the photocurrent to fall from 90% to 10% of the maximum value after the light is removed. The response time of the ultraviolet photodetector is also a very important parameter, which describes the reaction speed of the detector to the change of light. When the response time of the detector is long, the detector will not be applicable to the fast changing ultraviolet radiation. Generally, it is difficult to have high sensitivity and high response speed of the ultraviolet photodetector at the same time. When the response degree is greatly improved, the response time will be prolonged to a certain extent. For example Figure 12 Figure 2 shows a rising and falling process in the I-t curve of the device, the rising response time is 64.95 ms, and the falling response time is 58.94 ms.

[0090] The above merely describes the preferred embodiments of the present application, and is not used to limit the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A high work function Pd electrode contacted Ga2O3 solar blind ultraviolet photodetector, characterized in that: The application relates to a Ga2O3 solar blind ultraviolet photodetector, which comprises the following components: an insulating substrate; a large-area Ga2O3 film on the insulating substrate; a high-work-function Pd electrode on the Ga2O3 film; the diameter of the Ga2O3 film is 2 inches; the Pd electrode is an array of multiple electrodes, which are uniformly distributed on the surface of the Ga2O3 film; a preparation method of the Ga2O3 solar blind ultraviolet photodetector, which comprises the following steps: providing an insulating substrate and pre-treating the same; preparing a large-area Ga2O3 film on the surface of the pre-treated substrate, and then pre-treating the Ga2O3 film; preparing a high-work-function Pd electrode contact on the Ga2O3 film; the large-area Ga2O3 film is prepared by an MOCVD method; the preparation method of the large-area Ga2O3 film is as follows: cleaned substrates are placed into a chamber of an MOCVD device, the MOCVD growth temperature is set to 800 DEG C, the reaction chamber pressure is 40 torr, the Mo source is triethyl gallium, the carrier gas is nitrogen 200 sccm, the oxygen is 3000 sccm, the growth rate is 180-200 nm / h, the growth time is 1 h, and thus a Ga2O3 film with a diameter of 2 inches and a thickness of 200 nm is prepared; the pre-treatment method of the Ga2O3 film is the same as that of the substrate, and the specific method comprises the following steps: the Ga2O3 film is sequentially placed into acetone, anhydrous ethanol and deionized water for ultrasonic cleaning, and after cleaning, the Ga2O3 film is placed into deionized water for storage; a high-work-function Pd electrode contact is prepared on the Ga2O3 film, and the specific process is as follows: the insulating substrate loaded with a clean surface gallium oxide film is placed into a coating machine, vacuum is drawn, Pd is coated on the Ga2O3 film through electron beam thermal evaporation coating, and after coating, the mask plate is removed; the area of the Pd electrode is 108 mu m*108 mu m, and the channel width between the two electrodes is 37 mu m.

2. The Ga2O3 solar blind ultraviolet photodetector of claim 1, wherein: The insulating substrate uses a c-sapphire substrate or an insulating Si substrate.

3. The method of producing a Ga2O3 solar blind ultraviolet photodetector according to any one of claims 1 to 2, characterized by: The method specifically comprises the following steps: providing an insulating substrate and pre-treating the same; preparing a large-area Ga2O3 film on the surface of the pre-treated substrate, and then pre-treating the Ga2O3 film; preparing a high-work-function Pd electrode contact on the Ga2O3 film; the large-area Ga2O3 film is prepared by an MOCVD method; the preparation method of the large-area Ga2O3 film is as follows: cleaned substrates are placed into a chamber of an MOCVD device, the MOCVD growth temperature is set to 800 DEG C, the reaction chamber pressure is 40 torr, the Mo source is triethyl gallium, the carrier gas is nitrogen 200 sccm, the oxygen is 3000 sccm, the growth rate is 180-200 nm / h, the growth time is 1 h, and thus a Ga2O3 film with a diameter of 2 inches and a thickness of 200 nm is prepared; The method for pretreating the Ga2O3 film is the same as the method for pretreating the substrate, and the specific method comprises the following steps: The Ga2O3 film is sequentially placed in acetone, anhydrous ethanol and deionized water, and is cleaned by ultrasonic cleaning, and after cleaning, the Ga2O3 film is placed in deionized water for storage for standby; A high work function Pd electrode contact is prepared on the Ga2O3 film, and the specific process is as follows: The insulating substrate loaded with the surface clean gallium oxide film is placed in a coating machine, vacuum is drawn, Pd is coated on the Ga2O3 film by electron beam thermal evaporation coating, and after coating is completed, the mask is removed. The area of the Pd electrode is 108 mu m x 108 mu m, and the channel width between the two electrodes is 37 mu m.

4. The method of claim 3, wherein: The molecular pump rotation speed of the coating machine is 20000-30000 r / min.

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