Apparatus and method for improving the ohmic contact between the front contact and the doped layer of a crystalline solar cell.

Abstract

The invention relates to a device for improving the ohmic contact between the front contact (14) and the doped layer of a wafer solar cell (1) having a front side (11), a back side (12), a front contact (14), a doped layer and a back contact (15), wherein the front contact (14) and / or the back contact (15) is in the form of a strip or a grid, said device comprising: - a contact device (2) for electrical contact with the front or back contact (14, 15), - a further contact device (6) for electrical contact with the back or front contact (15, 14), - a voltage source (7) having one pole for electrical connection with the contact device (2) and another pole for electrical connection with the further contact device (6), - a point light source (4) for illuminating the front side (11) or the back side (12) of the wafer solar cell (1), wherein the further contact device (6) has: • an optically transparent material coated with an optically transparent conductive layer, or • an optically transparent material (62) whose surface is integrated with a plurality of electrically conductive lines (61), or • an optically transparent conductive material whose surface is integrated with a plurality of fine electrically conductive lines, or • a woven or mesh structure composed of a plurality of fine electrically conductive lines (61). Furthermore, the invention also relates to a method for improving the ohmic contact between the front contact (14) and the doped layer of a wafer solar cell (1) using said device.

Description

Technical Field

[0001] This invention relates to an apparatus and method for improving the ohmic contact between the front contact and the doped layer of a crystalline solar cell. The front side of the crystalline solar cell refers to the side facing the sun when the crystalline solar cell is operating, while the back side of the crystalline solar cell refers to the side facing away from the sun when the crystalline solar cell is operating. Background Technology

[0002] In the production of crystalline solar cells with a doped emitter layer and a front contact grid, high contact resistance may occur at the transition between the metal paste provided for producing the front contact grid and the doped layer, depending on the process control. This excessively high contact resistance typically leads to a reduction in the efficiency of the crystalline solar cell.

[0003] DE102016009560A1 and DE102018001057A1 disclose methods for improving the ohmic contact between a front contact grid and a doped layer designed as an emitter layer. First, a crystalline solar cell is provided, comprising a doped layer serving as an emitter, a front contact grid, and a back contact grid. Then, the front contact grid is electrically connected to one pole of a voltage source, and a contact device electrically connected to the other pole of the voltage source is connected to the back contact. The voltage source is used to apply a voltage opposite to that of the crystalline solar cell, the magnitude of which is lower than the breakdown voltage of the crystalline solar cell. When the voltage is applied, a point light source is directed to the sun-facing side of the crystalline solar cell. A segment of a localized region on the sun-facing side is irradiated, and a current is generated within this localized region. The current density is 200 A / cm². 2 Up to 20,000 A / cm 2 The duration of action in this region is 10ns to 10ms.

[0004] This method achieves localized and subsequent improvements in the contact resistance of crystalline solar cells by applying a reverse voltage and localized illumination. In this process, a large current flows through a very small area, improving the metal-semiconductor contact. To apply a voltage, the crystalline solar cell must be in contact on both sides. Furthermore, the contact device is often located in the optical path of a point light source, and in areas where the contact device is located, for example, in an opaque strip shape, it can only be partially or completely treated.

[0005] Figure 1 A cross-sectional view of a device known from the prior art according to DE102016009560A1 is shown. The crystalline solar cell 1 has a front side 11 and a back side 12. A front contact 14 is disposed on the front side 11, and a back contact 15 is disposed on the back side 12. The front contact 14 and the back contact 15 are respectively in the form of strips or grids. The device also includes:

[0006] - A contact device 3 for electrical contact with the front contact 14, wherein the contact device 3 is configured with four parallel wires, one of which has a cross-sectional view shown in the figure. Figure 1 ,

[0007] - Another contact device 2 for electrical contact with the back contact 15, wherein the other contact device 2 has a conductive material that covers the entire surface of the back contact 12 during electrical contact and is optically opaque.

[0008] - Voltage source 7, one pole of which is used for electrical connection with contact device 3, and the other pole of which is used for electrical connection with another contact device 2, and

[0009] - Point light source 4, used to illuminate the front side 11 of the crystalline solar cell 1.

[0010] In known methods of the prior art, the front contact 14 is in electrical contact with the contact device 3, and the back contact 15 is in electrical contact with another contact device 2. Furthermore, a voltage is applied by the voltage source 7 to generate a reverse current, and the point light source 4 is directed to the front surface 11, causing the beam 5 to partially illuminate a portion of the front surface 11.

[0011] However, in this method, the induced current through the front contact 14 results in a significant voltage drop along the path. Furthermore, the contact device 3, which consists of four wires, obstructs the point light source 4 and damages the crystalline solar cell 1 due to mechanical interactions. Additionally, the very large local current generated in the so-called shunt may burn out the wires.

[0012] Figures 2a to 2c A cross-sectional view of another prior art device is shown, which employs a method to improve the ohmic contact between the front contact grid and the doped layer of a crystalline solar cell. Figure 2a A cross-sectional view of the device is shown, and Figure 1 The corresponding device is shown, except that contact device 3 does not have four wires, but rather two opposing conductive strips, and for clarity, the voltage source is not shown. Figure 2a As shown, one of the two conductive strips is in contact with the front contact 14, while the other conductive strip is not in contact with the front contact 14. The point light source 4 is guided to a portion of the front contact 14 and moves on the front of the crystalline solar cell 1. This prevents the illuminated area from being blocked. Next, when the point light source 4 is guided to a portion of the central area of ​​the crystalline solar cell 1, the other conductive strip opposite the first conductive strip is turned on. Then, one conductive strip is removed, thus... Figure 2c In the middle, point light source 4 can also be processed in Figure 2aThe section of the epitaxial solar cell 1 that is shaded. This type of electrical contact causes a significant voltage drop as the induced current flows from the front contact 14 to the irradiated operating point. The current at the edge of the epitaxial solar cell 1 must flow through the entire front contact 14 to the conductive strip on the opposite side. Thus, the voltage applied to the irradiated operating point is unevenly distributed across the surface of the epitaxial solar cell 1, preventing it from acting uniformly on the front side. Furthermore, the conductive strip is not redundant. If the conductive strip fails to make proper contact with the front contact 14, the cell will not function.

[0013] It is evident that shading of the crystalline solar cell by the contact device can cause problems. Due to the contact of the solar cell, a portion of the voltage drops due to resistance. Consequently, the effective processing parameters of the contacts closer to the contact device differ from those farther away. This results in an uneven distribution of the applied reverse voltage across the entire front surface of the crystalline solar cell, severely impacting its proper operation and leading to a reduction in the cell's efficiency. Summary of the Invention

[0014] The objective of this invention is to provide an apparatus and method for improving the ohmic contact between the front contact and the doped layer of a crystalline solar cell. This apparatus and method can prevent or at least reduce shading and achieve more homogeneous process control, thereby improving the efficiency of the crystalline solar cell.

[0015] The aforementioned problem is solved by an apparatus having the technical features of claim 1 and a method having the technical features of claim 6. Advantageous improvements and modifications of the present invention are specifically described in the dependent claims and are set forth below.

[0016] According to the present invention, another contact device includes:

[0017] • Optically transparent materials coated with an optically transparent conductive layer, or

[0018] • Optically transparent material, wherein multiple fine conductive lines are integrated on the surface of the optically transparent material, or

[0019] • Optically transparent conductive material, wherein the surface of the optically transparent conductive material is integrated with multiple fine conductive lines, or

[0020] • A braided or mesh structure composed of multiple fine conductive wires.

[0021] Another option for the contact device is one whose entire surface is optically transparent and conductive, thus completely or minimally reducing the negative impacts caused by light shielding and voltage losses during the flow to the irradiated working point. The design and configuration of the other contact device is aimed at electrical contact between the front or back contact. In this invention, optically transparent material refers to a material with a transmittance of at least 90% in a wavelength range of 400 to 1,500 nm.

[0022] Another construction option for this contact device includes the use of fine conductive wires. These fine conductive wires are characterized by a diameter of less than 1 millimeter. Preferably, the diameter of these conductive wires is less than 500 micrometers, and more preferably less than 200 micrometers. For conductive wires of these diameters, the illumination area of ​​the point light source is much larger than the diameter of the conductive wire. Due to the use of such fine conductive wires, the corresponding contact device is macroscopically optically transparent.

[0023] The aforementioned apparatus and method provide an optically transparent, or at least macroscopically optically transparent, all-conductive pressure plate for the contact components on the irradiated side of a crystalline solar cell. Therefore, while the front or back contacts of the crystalline solar cell are in electrical contact, the corresponding solar cell surface, which is shielded by the contact device, can also be irradiated. This ensures that the reverse current, which is crucial for LECO (Laser Enhanced Contact Optimization) effects, always has a shorter path, thus minimizing voltage loss. Consequently, each contact of the corresponding contact grid can be optimized under very similar operating parameters. Furthermore, since the crystalline solar cell is already in electrical contact with the contact device before irradiation, the interlayer consisting of the crystalline solar cell and the two contact devices can be irradiated immediately without delay, thus saving production time.

[0024] In a preferred embodiment, the optically transparent material coated with the optically transparent conductive layer is designed as an optically transparent material in the form of glass or plastic coated with an optically transparent conductive oxide coating. The conductive oxide can be a TCO (transparent conductive oxide), such as ITO (indium tin oxide) or ZnO:Al. In this way, full-surface electrical contact of the front or back contacts can be achieved while ensuring that the side of the crystalline solar cell that is in electrical contact with another contact device is also illuminated.

[0025] Optically transparent materials are preferably glass or transparent plastics. Optically transparent conductive materials are preferably made of TCO, such as ITO or ZnO:Al.

[0026] The multiple conductive wires are preferably arranged in parallel to each other and embedded in the surface of the transparent material in a grid or mesh form. In this way, while ensuring sufficient transparency required for point light source illumination, full-surface electrical contact of the front or back contact can be achieved.

[0027] In a preferred embodiment, the plurality of fine conductive wires are made of metal and / or metal alloys. The plurality of fine conductive wires are preferably made of semi-noble metals and / or noble metals, such as silver wire, gold wire, or copper wire.

[0028] Preferably, both the front and back contacts have parallel-arranged fingers, the width of which is parallel to the surface of the solar cell and perpendicular to its extension direction. The width of the fine conductive lines among the multiple conductive lines is preferably smaller than the width of the fingers. This further ensures minimal shading.

[0029] For example, a point light source can be a focused beam from a laser, a light-emitting diode (LED), or a flash lamp. The wavelength of the beam emitted by the point light source is preferably between 400 nm and 1500 nm. The point light source is preferably a laser, particularly a laser diode.

[0030] The present invention also relates to a method for improving the ohmic contact between the front contact and the doped layer of a crystalline solar cell using the apparatus of one or more of the above embodiments, comprising the following steps:

[0031] a) The front contact body makes electrical contact with the contact device or another contact device.

[0032] b) The back contact is in electrical contact with another contact device or contact device.

[0033] c) Apply a voltage opposite to that of the crystalline solar cell to the front and back contacts using a voltage source. The applied voltage is lower than the breakdown voltage of the crystalline solar cell.

[0034] d) During the application of voltage, when another contact device makes electrical contact with the front contact of the crystalline solar cell, the point light source is directed to the side facing the sun; when another contact device makes electrical contact with the back contact of the crystalline solar cell, the point light source is directed to the side facing away from the sun. Thus, a section of the front facing the sun or the back facing away from the sun is illuminated, thereby generating a current in that section and acting on that section.

[0035] In a preferred embodiment, steps a) through d) are performed statically in the apparatus. The method is applicable to both static implementation and processing of individual crystalline solar cells.

[0036] Preferably, the means for improving the ohmic contact between the front contact and the doped layer of the crystalline solar cell is incorporated as a component of the crystalline solar cell inline production facility. Steps a) and b) include loading the crystalline solar cell into a contact device and another contact device, for example, from a loading conveyor belt.

[0037] Between steps b) and d), using a contact device and / or another contact device as a transport unit for the crystalline solar cell, the crystalline solar cell is transferred from the loading / contacting area (where steps a) and b)) of a device configured as an inline production facility for improving the ohmic contact between the front contact and the doped layer of the crystalline solar cell to the irradiation area (where steps c) and d)), and then to the unloading area, where the contact device, the other contact device, and the crystalline solar cell are spatially separated. For example, the crystalline solar cell may be unloaded onto an unloading conveyor belt.

[0038] The cycle time of this method has been shortened.

[0039] Preferably, a contact device and another contact device, configured as a component of the inline production facility for improving the ohmic contact between the front contact and the doped layer of the crystalline solar cell, together with the electrically contacted crystalline solar cell, move in an inline transport cycle from the loading / contact area through the irradiation area to the unloading area, and then back to the loading / contact area via a return loop. This means that the two contact devices are guided in one cycle system or process. After unloading, they are sent back outside the operating area for reloading. This further greatly reduces the cycle time. The contacting, handling, and unloading of the crystalline solar cell are not completed in one cycle, but are performed separately. Each step is executed within one cycle.

[0040] The method is preferably performed with the following parameters:

[0041] A reverse voltage, ranging from 1 to 40V, is applied to the front and back contact gates by a voltage source. The power density of the localized irradiation is preferably between 200 and 500,000 W / cm². Preferably, a current of 0.1 to 10A flows between the front and back contacts during this process.

[0042] Preferably, prior to implementing the method of the present invention, the contact resistance of the provided crystalline solar cell, measured using the TLM method (transfer length method), is >50 mΩ·cm². In a preferred embodiment, the contact area of ​​the provided crystalline solar cell prior to implementing the method of the present invention is less than 0.1%. In other words, the metallized area of ​​the metal semiconductor contact is less than 0.1% of the surface on which the metal semiconductor contact is located. The provided crystalline solar cell preferably has one or more passivation layers and / or antireflective layers. The thickness of the antireflective layer is preferably greater than 100 nm. For example, the antireflective layer is made of SiN x (Silicon nitride) is formed. The antireflective layer can also be made of SiN. x (Silicon nitride) / SiO x N y (Silicon oxynitride) double layer, or SiN x (Silicon Nitride) / SiOx N y The silicon oxynitride (SiO2) / SiO2 (silicon dioxide) three-layer structure is formed, with a thickness greater than 100 or 110 nm. Preferably, the sheet resistance of the front doped layer of the provided crystalline solar cell is higher than that of the back doped layer.

[0043] The crystalline solar cell using the method described above can be a single solar cell, a multi-junction solar cell, or a sub-cell of a multi-junction solar cell. Attached Figure Description

[0044] Other advantages and features of the method will be described through the preferred embodiments described below. The accompanying drawings are not to scale and are for illustrative purposes only.

[0045] In a illustrative manner rather than to scale:

[0046] Figure 1 It is a cross-sectional diagram of a device based on existing technology;

[0047] Figures 2a-2c These are cross-sectional views of another apparatus for implementing the existing technical method;

[0048] Figure 3 This is a cross-sectional view of the apparatus described in the first embodiment of implementing one step of the method of the present invention;

[0049] Figure 4 This is a cross-sectional view of the apparatus described in the second embodiment of implementing one step of the method of the present invention;

[0050] Figure 5 This is a cross-sectional view of the apparatus described in the third embodiment of implementing one step of the method of the present invention;

[0051] Figure 6 This is a cross-sectional view of the apparatus described in the fourth embodiment of implementing one step of the method of the present invention;

[0052] Figure 7 This is a perspective view of the apparatus described in the fifth embodiment of the method of the present invention.

[0053] List of reference numerals

[0054] T conveying direction

[0055] Z1 Loading / Contact Area

[0056] Z2 irradiation area

[0057] Z3 Uninstallation Area

[0058] Z4 return loop

[0059] 1. Epistar Solar Cells

[0060] 11 front

[0061] 12 Back

[0062] 14 frontal contact bodies

[0063] 15 Backside Contacts

[0064] 2. Contact device

[0065] 3. Contact device

[0066] 4 point light sources

[0067] 5 beams

[0068] 6. Another contact device

[0069] 61 Conductive wire

[0070] 62 Transparent materials

[0071] 7. Voltage source Detailed Implementation

[0072] Figure 1 A cross-sectional view of an apparatus according to the prior art is shown; Figures 2a-2c Cross-sectional views of another apparatus according to the prior art are shown, implementing a method known in the prior art. Please refer to the description of these figures above.

[0073] Figure 3 A cross-sectional view of the apparatus described in a first embodiment of implementing one step of the method of the present invention is shown. Figure 3 The device shown is Figure 1 The device shown corresponds to the one shown, except that, Figure 3 The device shown does not have contact device 3, but rather another contact device 6, which is made of optically transparent material and coated with an optically transparent conductive layer. Point light source 4 partially illuminates the front side 11 with a beam of light 5, and simultaneously applies a voltage opposite to that of the crystalline solar cell 14 to the front contact 14 and the back contact 15 through voltage source 7, contact device 2 and the other contact device 6. The applied voltage is lower than the breakdown voltage of the crystalline solar cell 1.

[0074] Figure 4 A cross-sectional view of the apparatus described in a second embodiment of implementing one step of the method of the present invention is shown. Figure 4 The device shown is Figure 3 The device shown is the same, except that contact device 2 makes electrical contact with the front contact 14, while another contact device 6 makes electrical contact with the back contact 15. The point light source 4 is configured and designed to partially illuminate the back 12 with a beam of light 5.

[0075] Figure 5A cross-sectional view of the apparatus described in a third embodiment of implementing one step of the method of the present invention is shown. Figure 5 The device shown is Figure 3 Corresponding to the illustrated device, the difference lies in that another contact device 6 is composed of an optically transparent material 62 with multiple fine conductive lines 61 integrated on the surface of the optically transparent material 62. During the generation of reverse current, the point light source 4 moves above the front surface 11 in the direction of the arrow. In a variation, the optically transparent material 62 can also be an optically transparent conductive material.

[0076] Figure 6 A cross-sectional view of the apparatus described in the fourth embodiment, which implements one step of the method of the present invention, is shown. Figure 6 The device shown is Figure 4 Corresponding to the illustrated device, the difference lies in that another contact device 6 comprises a braided or mesh structure consisting of multiple fine conductive wires 61. For clarity, the voltage source is not shown. During the generation of reverse current, the point light source 4 moves above the back surface 12 in the direction of the arrow.

[0077] Figure 7 A perspective view of the apparatus described in the fifth embodiment of the method of the present invention is shown. The apparatus for improving the ohmic contact between the front contact and the doped layer of the crystalline solar cell is configured as a component of the inline production facility of the crystalline solar cell 1, for improving the front contact of the crystalline solar cell 1 (…). Figure 7 The device has a front contact, a doped layer, and a back contact (not shown) between a doped layer (not shown) and an ohmic contact designed as, for example, an emitter layer. Figure 7 (Not shown in the image), the front contact is strip-shaped or grid-shaped. The device has a contact device 2 that makes electrical contact with the back contact, and another contact device 6 that makes electrical contact with the front contact. The device also has a voltage source ( Figure 7 (Not shown in the image), one pole of which is used for electrical connection with contact device 2, and the other pole for electrical connection with another contact device 6. There is also a point light source 4, which is configured and designed to illuminate the front side of the crystalline solar cell 1 with a beam of light 5. The other contact device 6 is made of an optically transparent material, the surface of which is coated with an optically transparent conductive layer or an optically transparent material (not shown) with multiple micro-conductive lines (not shown) integrated on its surface, or a braided or mesh structure composed of multiple micro-conductive lines (not shown). The device for improving the ohmic contact between the front contact and the doped layer of the crystalline solar cell, which is set as a component of the inline production facility, also has a loading / contact area Z1, an irradiation area Z2, an unloading area Z3, and a return loop Z4.

[0078] In the loading / contact zone Z1, the crystalline solar cell is loaded into contact device 2 and another contact device 6. The front contact is electrically connected to the other contact device 6, and the back contact is electrically connected to contact device 2. Then, using contact device 2 and / or the other contact device 6 as a transport device for the crystalline solar cell 1, the interlayer consisting of the crystalline solar cell 1 and the two contact devices 2 and 6 is transported from the loading / contact zone Z1 to the irradiation zone Z2. In the irradiation zone Z2, a voltage opposite to that of the crystalline solar cell 1 is applied to the front and back contacts by a voltage source. The applied voltage is lower than the breakdown voltage of the crystalline solar cell 1. Simultaneously, a point light source 4 is guided above the front side. During this process, a portion of the local area of ​​the front side is irradiated, thereby generating a current in that portion and acting on that portion. Next, the interlayer is transported to the unloading zone Z3, where contact device 2, the other contact device 6, and the crystalline solar cell 1 are spatially separated. Then, contact device 2 and another contact device 6 are sent back to loading / contact area Z1 in return loop Z4 for reloading.

[0079] Contact devices 2 and 6, together with the electrically contacted crystalline solar cell 1, move together in an inline transport loop from loading / contact area Z1 through irradiation area Z2 to unloading area Z3, and then through return loop Z4 back to loading / contact area Z1, thereby forming a loop system suitable for inline mass production.

Claims

1. Device for improving the ohmic contact between the front contact (14) and the doped layer of a wafer solar cell (1), the wafer solar cell (1) having: - a front side (11), a back side (12), a front contact (14), a doped layer and a back contact (15), wherein the front contact (14) and / or the back contact (15) is / are strip-shaped or grid-shaped, the device comprising: - a contact device (2) for electrical contact with the front or back contact (14, 15), - a further contact device (6) for electrical contact with the back or front contact (15, 14) - a voltage source (7) having one pole for electrical connection with the contact device (2) and one pole for electrical connection with the further contact device (6), characterized in that the device comprises: - a point light source (4) for irradiating the front side (11) or the back side (12) of the wafer solar cell (1), the further contact device (6) having: • an optically transparent material coated with an optically transparent conductive layer, or • an optically transparent material (62) whose surface is integrated with a plurality of electrically conductive lines (61), or • an optically transparent conductive material whose surface is integrated with a plurality of electrically conductive lines, or • a woven or mesh structure consisting of a plurality of electrically conductive lines (61).

2. The apparatus of claim 1, wherein, The optically transparent material coated with an optically transparent conductive layer is an optically transparent material in the form of glass or plastic coated with an optically transparent conductive oxide.

3. The apparatus of claim 1, wherein, The plurality of electrically conductive lines (61) are arranged parallel to each other and embedded as a grid or woven structure in the surface of the optically transparent material (62).

4. The apparatus of one of claims 1 or 3, characterized in that The plurality of electrically conductive lines (61) are made of metal and / or metal alloy.

5. The device of the preceding claim 4, characterized in that, The front contact (14) and the back contact (15) have parallel to each other contact fingers whose width is parallel to the surface of the wafer solar cell and perpendicular to the direction of extension of the contact fingers, and the width of each of the plurality of electrically conductive lines (61) is smaller than the width of the contact fingers.

6. The apparatus of one of claims 1 or 3, characterized by The plurality of electrically conductive lines (61) are made of semi-noble metal and / or noble metal.

7. The device according to the preceding claim 6, characterized in that, The front contact (14) and the back contact (15) have parallel to each other contact fingers whose width is parallel to the surface of the wafer solar cell and perpendicular to the direction of extension of the contact fingers, and the width of each of the plurality of electrically conductive lines (61) is smaller than the width of the contact fingers.

8. The device according to one of the preceding claims 1 or 3, characterized in that, The front contact (14) and the back contact (15) have parallel to each other contact fingers whose width is parallel to the surface of the wafer solar cell and perpendicular to the direction of extension of the contact fingers, and the width of each of the plurality of electrically conductive lines (61) is smaller than the width of the contact fingers.

9. Method for improving the ohmic contact between the front contact (14) and the doped layer of a wafer solar cell (1) using the device according to any one of claims 1 to 8, comprising the following steps: a) electrical contact of the front contact (14) with the contact device (2) or the further contact device (6), b) electrical contact of the back contact (15) with the further contact device (6) or the contact device (2), c) the voltage source (7) applies a voltage to the front contact (14) and to the back contact (15) which is opposite to the voltage of the solar cell (1), the applied voltage being lower than the breakdown voltage of the solar cell (1), d) during the application of the voltage, the point light source (4) is directed to the front side (11) of the solar cell (1) facing the sun when the further contact device (6) is in electrical contact with the front contact (14) and to the back side (12) of the solar cell (1) facing away from the sun when the further contact device (6) is in electrical contact with the back contact (15), whereby a section of the local area of the front side (11) facing the sun or of the back side (12) facing away from the sun is illuminated, so that an electrical current is generated in this section and acts on this section.

10. The method of claim 9, wherein, Steps a) to d) are carried out in a static manner.

11. The method of claim 9, wherein, The device is designed as a component of an inline production facility for solar cells (1), steps a) and b) comprising the loading of the solar cell (1) into the contact device (2) and the further contact device (6), between steps b) and d) the contact device (2) and / or the further contact device (6) acting as a transport unit for the solar cell (1) transporting the solar cell (1) from a loading / contacting zone (Z1) for the device for improving the ohmic contact between the front contact (14) and the doped layer of the solar cell (1) to an illumination zone (Z2), wherein steps a) and b) are carried out in the loading / contacting zone (Z1) and steps c) and d) are carried out in the illumination zone (Z2), and then to an unloading zone (Z3), in which the contact device (2), the further contact device (6) and the solar cell (1) are spatially separated.

12. The method of claim 11, wherein, The device is designed as a component of an inline production facility, the contact device (2) and the further contact device (6) moving together with the electrically contacted solar cell (1) in an inline transport cycle from the loading / contacting zone (Z1) via the illumination zone (Z2) to the unloading zone (Z3) and back to the loading / contacting zone (Z1) via a return loop (Z4).

Images