A semiconductor laser control method and semiconductor laser

Abstract

The present invention discloses a semiconductor laser control method and a semiconductor laser, and relates to the field of lasers. The semiconductor laser control method comprises: upon receiving a start-up instruction, obtaining the initial ambient temperature; if the initial ambient temperature falls within a non-overlapping range, controlling the laser module corresponding to the non-overlapping range to start; if the initial ambient temperature falls within an overlapping range, obtaining the change trend of the ambient temperature within a first preset time length; and selecting and controlling one of the two laser modules corresponding to the overlapping range to start according to the change trend of the ambient temperature within the first preset time length. The semiconductor laser control method provided by the present invention has the characteristics of a wider applicable ambient temperature range and a more stable laser output.

Description

Technical Field

[0001] The present invention relates to the field of lasers, and in particular to a semiconductor laser control method and a semiconductor laser. Background Art

[0002] At present, some semiconductor lasers on the market are equipped with multiple laser modules with different operating temperatures, and the output wavelengths of the multiple laser modules are the same. By selecting laser modules with different operating temperatures to emit light at different ambient temperatures, the locked wave output at different ambient temperatures can be achieved.

[0003] The operating temperatures of each laser module of this type of semiconductor laser are different, and the ambient temperature needs to correspond to the operating temperature point-to-point, resulting in a narrow applicable ambient temperature range. In addition, the selection of the laser module depends entirely on the current ambient temperature, without considering the fluctuation of the ambient temperature, resulting in the need to switch the laser module within a short period of time after starting with a specific laser module. Even when the selected laser module has not yet been started, it is necessary to switch to another laser module, resulting in frequent fluctuations in laser output. Summary of the invention

[0004] The object of the present invention is to provide a semiconductor laser control method, which has the characteristics of wider applicable ambient temperature range and more stable laser output.

[0005] Another object of the present invention is to provide a semiconductor laser having the characteristics of wider applicable ambient temperature range and more stable laser output.

[0006] The embodiment of the present invention provides a technical solution:

[0007] A semiconductor laser control method is applied to a semiconductor laser, wherein the semiconductor laser outputs laser light of a constant wavelength within a set temperature range, and the semiconductor laser has a plurality of laser modules, wherein a plurality of operating temperature ranges corresponding to the plurality of laser modules divide the set temperature range in sequence; any of the operating temperature ranges includes an overlapping range that partially overlaps with an adjacent operating temperature range, and a non-overlapping range that does not overlap with the remaining operating temperature ranges; the semiconductor laser control method comprises:

[0008] When receiving a start command, obtaining the initial ambient temperature;

[0009] If the initial ambient temperature falls within one of the non-overlapping ranges, controlling the laser module corresponding to the non-overlapping range to start;

[0010] If the initial ambient temperature falls within one of the overlapping ranges, obtaining a change trend of the ambient temperature within a first preset time period;

[0011] According to the change trend of the ambient temperature within the first preset time period, one of the two laser modules corresponding to the overlapping range is selected and controlled to start.

[0012] In an optional embodiment, the step of selecting and controlling one of the two laser modules corresponding to the overlapping range to start according to the change trend of the ambient temperature within the first preset time period includes:

[0013] If the ambient temperature shows an upward trend within the first preset time period, the laser module corresponding to the higher one of the two operating temperature ranges to which the overlapping range belongs is controlled to start;

[0014] If the ambient temperature shows a downward trend within the first preset time period, the laser module corresponding to the lower one of the two operating temperature ranges to which the overlapping range belongs is controlled to start;

[0015] If the ambient temperature maintains the initial ambient temperature unchanged within the first preset time period, one of the two laser modules corresponding to the overlapping range is selected and controlled to start according to the comparison result between the initial ambient temperature and the middle value of the overlapping range in which it falls.

[0016] In an optional embodiment, the step of selecting and controlling one of the two laser modules corresponding to the overlapping range to start according to the comparison result between the initial ambient temperature and the middle value of the overlapping range in which the initial ambient temperature falls comprises:

[0017] If the initial ambient temperature is greater than the intermediate value, the laser module corresponding to the higher one of the two operating temperature ranges to which the overlapping range belongs is controlled to start;

[0018] If the initial ambient temperature is lower than the middle value, the laser module corresponding to the lower one of the two operating temperature ranges to which the overlapping range belongs is controlled to start.

[0019] In an optional implementation, the semiconductor laser control method further includes:

[0020] If the ambient temperature changes from the initial ambient temperature to fall within one of the non-overlapping ranges within the first preset time period, the laser module corresponding to the non-overlapping range is controlled to start.

[0021] In an optional embodiment, the semiconductor laser further comprises a power monitoring system for monitoring the power of the plurality of laser modules, and the semiconductor laser control method further comprises:

[0022] After controlling the laser module to start, continuously acquiring the real-time ambient temperature, and controlling the power monitoring system to monitor the real-time power of the currently running laser module;

[0023] According to the real-time ambient temperature or the real-time power, the currently running laser module is selectively controlled to be switched.

[0024] In an optional embodiment, the semiconductor laser further comprises a temperature control system for respectively adjusting the temperature of the plurality of laser modules; the step of selectively controlling the switching of the currently running laser module according to the real-time power comprises:

[0025] If the real-time power is abnormal, select one of the laser modules that can operate normally and whose operating temperature range is closest to the real-time ambient temperature to obtain a spare module;

[0026] Controlling the temperature adjustment system to adjust the temperature of the standby module to a range corresponding to the operating temperature;

[0027] The currently running laser module is switched to the standby module.

[0028] In an optional implementation, the step of selectively controlling the switching of the currently running laser module according to the real-time ambient temperature further includes:

[0029] When the real-time ambient temperature is equal to a middle value of one of the overlapping ranges corresponding to the currently running laser module, obtaining a change trend of the ambient temperature within a second preset time period;

[0030] If the overlapping range where the real-time ambient temperature is located includes the lower limit value of the operating temperature range corresponding to the currently running laser module, and the ambient temperature shows a downward trend within the second preset time period, the currently running laser module is switched to the laser module corresponding to the lower one of the two operating temperature ranges to which the overlapping range belongs;

[0031] If the overlapping range in which the real-time ambient temperature is located contains the upper limit value of the operating temperature range corresponding to the currently running laser module, and the ambient temperature shows an upward trend within the second preset time period, the currently running laser module is switched to the laser module corresponding to the higher one of the two operating temperature ranges to which the overlapping range belongs.

[0032] In an optional implementation, the step of selectively controlling the switching of the currently running laser module according to the real-time ambient temperature or the real-time power further includes:

[0033] When the currently running laser module needs to be switched, the input power of the currently running laser module is controlled to gradually decrease to zero, and the input power of another laser module is controlled to gradually increase from zero.

[0034] In an optional embodiment, the semiconductor laser outputs laser light with a wavelength of 976 nm, and / or,

[0035] The set temperature range is -40°C to 105°C, and / or,

[0036] The difference between the upper limit and the lower limit of any of the overlapping ranges is 5°C.

[0037] An embodiment of the present invention further provides a semiconductor laser having a controller, wherein the controller is used to execute the semiconductor laser control method described above.

[0038] Compared with the prior art, the semiconductor laser control method provided by the present invention has an overlapping range between the operating temperature ranges of the multiple laser modules of the semiconductor laser used therein, and the initial ambient temperature before startup falls within a non-overlapping range of an operating temperature range, indicating that the ambient temperature in a short period of time will not cause the switching of the laser module, so the laser module corresponding to the non-overlapping range is directly controlled to start. If the initial ambient temperature falls into an overlapping range, it indicates that the fluctuation of the ambient temperature in a short period of time may cause the switching of the laser module. Therefore, according to the rising or falling trend of the ambient temperature within the first preset time, one of the two laser modules corresponding to the overlapping range is controlled to start respectively. Thereby, the operating temperature requirements of the currently started laser module are met, and the situation in which the laser module switching is caused by the ambient temperature fluctuation in a short period of time is avoided. Therefore, the semiconductor laser control method provided by the present invention has the characteristics of a wider applicable ambient temperature range and a smoother laser output. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only illustrate certain embodiments of the present invention and should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can also be obtained based on these drawings without creative work.

[0040] Figure 1 A schematic diagram of the structure of a semiconductor laser provided by an embodiment of the present invention;

[0041] Figure 2 A flowchart of a semiconductor laser control method provided by an embodiment of the present invention;

[0042] Figure 3 for Figure 2 A sub-step flow chart of step S104;

[0043] Figure 4 for Figure 3 A sub-step flow chart of sub-step S1043;

[0044] Figure 5 for Figure 2 A sub-step flow chart of step S107;

[0045] Figure 6 for Figure 2 Another sub-step flow chart of step S107 in FIG.

[0046] Icons: 100-semiconductor laser; 110-laser module; 120-controller; 130-temperature sensor; 140-power circuit; 150-wave locking device; 160-fast and slow axis collimator; 170-reflector; 180-focusing lens. DETAILED DESCRIPTION

[0047] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0048] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0049] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0050] In the description of the present invention, it should be understood that the terms "upper", "lower", "inside", "outside", "left", "right", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, or are directions or positional relationships in which the product of the invention is usually placed when in use, or are directions or positional relationships commonly understood by those skilled in the art. These directions or positional relationships are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as a limitation on the present invention.

[0051] Furthermore, the terms “first”, “second”, etc. are merely used for distinguishing descriptions and should not be understood as indicating or implying relative importance.

[0052] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms such as "setting" and "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0053] The specific implementation modes of the present invention are described in detail below in conjunction with the accompanying drawings.

[0054] Example

[0055] See also Figure 1 , Figure 1 FIG. 1 is a schematic structural diagram of a semiconductor laser 100 provided in this embodiment.

[0056] The semiconductor laser 100 provided in this embodiment has a plurality of laser modules 110, a controller 120, a temperature sensor 130, a power circuit 140, a wave-locking device 150, a plurality of fast and slow axis collimating mirrors 160, a plurality of reflectors 170, and a focusing lens 180. The controller 120 is electrically connected to the temperature sensor 130 and the power circuit 140 respectively, and the power circuit 140 is used to control the start and stop of the plurality of laser modules 110. The plurality of fast and slow axis collimating mirrors 160 are respectively arranged at the output ends of the plurality of laser modules 110, and the plurality of reflectors 170 correspond to the plurality of fast and slow axis collimating mirrors 160 respectively, and are used to reflect the light passing through the plurality of fast and slow axis collimating mirrors 160 to the wave-locking device 150, and the wave-locking device 150 is used to limit the wavelength of the multi-path light. Before the light passing through the wave-locking device 150 is emitted from the semiconductor laser 100, it also passes through the focusing lens 180, and the focusing lens 180 focuses or shapes the light to meet the actual application requirements.

[0057] It can be seen that in this embodiment, the semiconductor laser 100 outputs a laser of a constant wavelength when any laser module 110 emits light. In fact, the semiconductor laser 100 provided in this embodiment outputs a laser of a constant wavelength within a set temperature range, and the plurality of laser modules 110 respectively have different operating temperature ranges, and the plurality of operating temperature ranges corresponding to the plurality of laser modules 110 divide the set temperature range in sequence, that is, they are arranged in sequence from the lower limit value of the set temperature range to its upper limit value. Any operating temperature range includes an overlapping range that partially overlaps with an adjacent operating temperature range, and a non-overlapping range that does not overlap with the remaining operating temperature ranges. In other words, there is an overlapping range between any two adjacent operating temperature ranges.

[0058] Preferably, in the present embodiment, the set temperature range of the semiconductor laser 100 is -40°C~105°C, the number of laser modules is four, the operating temperature ranges of the four laser modules 110 are -40°C~5°C, 0°C~45°C, 40°C~85°C and 80°C~105°C, respectively, and the difference between the upper limit and the lower limit of the overlapping range between any two adjacent operating temperature ranges is 5°C.

[0059] Moreover, in this embodiment, the free wavelengths output by the four laser modules 110 within their respective operating temperature ranges are all 969nm~983nm, and the wavelength locked by the wave-locking device 150 is 976nm, that is, when any laser module 110 emits light, the semiconductor laser 100 outputs laser light with a wavelength of 976nm.

[0060] The temperature sensor 130 is used to detect the ambient temperature. In practical applications, the controller 120 receives the detection data of the temperature sensor 130 upon receiving the start instruction, thereby obtaining the initial ambient temperature. After obtaining the initial ambient temperature, the controller 120 compares the initial ambient temperature with a plurality of operating temperature ranges. If the initial ambient temperature falls within a non-overlapping range, the power supply circuit 140 controls the laser module 110 corresponding to the non-overlapping range to start.

[0061] For example, the initial ambient temperature is 30°C, which falls within the non-overlapping range of the operating temperature range of 0°C to 45°C. In this case, the controller 120 controls the laser module 110 corresponding to the operating temperature range of 0°C to 45°C to start. In this case, the initial ambient temperature is within the non-overlapping range of the corresponding operating temperature range, indicating that the ambient temperature is unlikely to fluctuate beyond the operating temperature range in a short period of time. Therefore, the corresponding laser module 110 is directly controlled to start, and the laser module 110 will not be switched in a short period of time, ensuring stable laser output.

[0062] If the initial ambient temperature falls within an overlapping range, the change trend of the ambient temperature within the first preset time period is obtained. It can be understood that obtaining the change trend of the ambient temperature within the first preset time period may specifically be obtaining the ambient temperature detected by the temperature sensor 130 at least once within the first preset time period, and comparing the obtained at least one ambient temperature with the initial ambient temperature, so as to obtain a change trend of the ambient temperature within the first preset time period, specifically an increase or decrease.

[0063] If the ambient temperature shows an upward trend within the first preset time, the controller 120 controls the laser module 110 corresponding to the higher one of the two operating temperature ranges to which the overlapping range belongs to start through the power supply circuit 140. If the ambient temperature shows a downward trend within the first preset time, the laser module 110 corresponding to the lower one of the two operating temperature ranges to which the overlapping range belongs to start is controlled.

[0064] For example, the initial ambient temperature is 42°C, which falls within the overlapping range between the two operating temperature ranges of 0°C~45°C and 40°C~85°C. In this case, if the ambient temperature shows an upward trend within the first preset time period, it indicates that the ambient temperature has a tendency to move away from the non-overlapping range of 0°C~45°C. Therefore, the controller 120 controls the laser module 110 corresponding to the operating temperature range of 40°C~85°C to start, which can avoid switching the laser module 110 in a short period of time thereafter. If the ambient temperature shows a downward trend within the first preset time period, it indicates that the ambient temperature has a tendency to move away from the non-overlapping range of 40°C~85°C. Therefore, the controller 120 controls the laser module 110 corresponding to the operating temperature range of 0°C~45°C to start, which can avoid switching the laser module 110 in a short period of time thereafter.

[0065] In fact, the semiconductor laser 100 provided in this embodiment also has a power monitoring system for monitoring the power of multiple laser modules 110, and a temperature control system for respectively adjusting the temperature of multiple laser modules 110, and the controller 120 is electrically connected to the power detection system and the temperature control system respectively.

[0066] After the controller 120 controls the laser module 110 to start, the ambient temperature is obtained in real time through the temperature sensor 130 to obtain the real-time ambient temperature, and the real-time power of the laser module 110 in operation is monitored through the power monitoring system. The controller 120 selectively switches the laser module 110 according to the real-time ambient temperature or the real-time power to ensure the continuous and stable output of the semiconductor laser 100. In addition, after the real-time power indicates that the currently operating laser module 110 is abnormal, the controller 120 can also control the temperature control system to heat or cool one of the remaining multiple laser modules 110 to meet its operating temperature range, thereby replacing the currently abnormal laser module 110 for operation.

[0067] This embodiment also provides a semiconductor laser control method, which is applied to the aforementioned semiconductor laser 100. In other words, the controller 120 of the aforementioned semiconductor laser 100 is used to execute the semiconductor laser control method. Figure 2 , Figure 2 FIG. 1 is a flowchart of a semiconductor laser control method provided in this embodiment. The semiconductor laser control method may include:

[0068] Step S101, when a start instruction is received, obtaining the initial ambient temperature.

[0069] When receiving the start-up instruction, the controller 120 receives the detection data of the temperature sensor 130 to obtain the initial ambient temperature.

[0070] Step S102 , if the initial ambient temperature falls within a non-overlapping range, the laser module 110 corresponding to the non-overlapping range is controlled to start.

[0071] The initial ambient temperature falls within a non-overlapping range, indicating that the ambient temperature cannot fluctuate to a temperature beyond the operating temperature range corresponding to the non-overlapping range in a short period of time. Therefore, the controller 120 directly controls the corresponding laser module 110 to start. The laser module 110 will not switch in a short period of time, and the laser output can be stable.

[0072] Step S103: if the initial ambient temperature falls into an overlapping range, then obtaining a change trend of the ambient temperature within a first preset time period.

[0073] Obtaining the changing trend of the ambient temperature within the first preset time period can specifically be to obtain the ambient temperature detected by the temperature sensor 130 at least once within the first preset time period, and compare the obtained at least one ambient temperature with the initial ambient temperature, so as to obtain the changing trend of the ambient temperature within the first preset time period, specifically an increase or decrease.

[0074] Step S104 , according to the change trend of the ambient temperature within the first preset time period, one of the two laser modules 110 corresponding to the overlapping range is selected and controlled to be started.

[0075] If the initial ambient temperature falls into an overlapping range, it indicates that the ambient temperature is more likely to fluctuate from one operating temperature range to another operating temperature range. Therefore, in order to avoid frequent and unstable laser output fluctuations caused by switching within a short period of time after one of the laser modules 110 is started, in this embodiment, one of the two laser modules 110 corresponding to the overlapping range is selected and controlled to start according to the change trend of the ambient temperature.

[0076] Please refer to Figure 3 , Figure 3The figure shows a sub-step flow chart of step S104. Step S104 may include the following sub-steps:

[0077] Sub-step S1041 , if the ambient temperature shows an upward trend within the first preset time period, the laser module 110 corresponding to the higher one of the two operating temperature ranges to which the overlapping range belongs is controlled to start.

[0078] If the ambient temperature shows an upward trend within the first preset time period, it indicates that the ambient temperature has a tendency to move away from the lower one of the two overlapping operating temperature ranges. Therefore, controlling the laser module 110 corresponding to the higher operating temperature range to start can avoid switching the laser module 110 in a short period of time thereafter.

[0079] Sub-step S1042 , if the ambient temperature shows a downward trend within the first preset time period, the laser module 110 corresponding to the lower one of the two operating temperature ranges to which the overlapping range belongs is controlled to start.

[0080] If the ambient temperature shows a downward trend within the first preset time period, it indicates that the ambient temperature has a tendency to move away from the higher of the two overlapping operating temperature ranges. Therefore, controlling the laser module 110 corresponding to the lower operating temperature range to start can avoid switching the laser module 110 in a short period of time thereafter.

[0081] Sub-step S1043, if the ambient temperature maintains the initial ambient temperature unchanged within the first preset time, then according to the comparison result between the initial ambient temperature and the middle value of the overlapping range it falls into, one of the two laser modules 110 corresponding to the overlapping range is selected to start.

[0082] If the ambient temperature maintains the initial ambient temperature unchanged within the first preset time, it indicates that the possibility of the ambient temperature fluctuating in a short time is extremely small. In this case, according to the comparison result between the initial ambient temperature and the middle value of the overlapping range it falls into, it is determined which non-overlapping range of the operating temperature range the initial ambient temperature is closer to, so as to select the laser module 110 corresponding to the operating temperature range to start, thereby minimizing the probability of switching the laser module 110 in a short time.

[0083] Please refer to Figure 4 , Figure 4 The figure shows a sub-step flow chart of sub-step S1043. Sub-step S1043 may also include the following sub-steps:

[0084] Sub-step S1043a, if the initial ambient temperature is greater than the middle value, the laser module 110 corresponding to the higher one of the two operating temperature ranges to which the overlapping range belongs is controlled to start.

[0085] If the initial ambient temperature is greater than the middle value, it indicates that the ambient temperature is closer to the non-overlapping range of the higher operating temperature range, so the controller 120 controls the laser module 110 corresponding to the higher operating temperature range to start.

[0086] Sub-step S1043b: if the initial ambient temperature is less than the middle value, the laser module 110 corresponding to the lower one of the two operating temperature ranges to which the overlapping range belongs is controlled to start.

[0087] If the initial ambient temperature is less than the middle value, it indicates that the ambient temperature is closer to the non-overlapping range of the lower operating temperature range, so the controller 120 controls the laser module 110 corresponding to the lower operating temperature range to start.

[0088] Please continue reading Figure 2 , the semiconductor laser control method may further include:

[0089] Step S105 , if the ambient temperature changes from the initial ambient temperature to fall within a non-overlapping range within the first preset time period, the laser module 110 corresponding to the non-overlapping range is controlled to start.

[0090] It can be understood that in the process of judging the changing trend of the ambient temperature within the first preset time period, if the ambient temperature directly fluctuates to fall into a non-overlapping range, then the possibility that the ambient temperature will subsequently fluctuate to leave the operating temperature range corresponding to the non-overlapping range in a short period of time is extremely low. Therefore, it is sufficient to directly control the laser module 110 corresponding to the non-overlapping range to start.

[0091] Step S106 , after controlling the laser module 110 to start, continuously acquiring the real-time ambient temperature, and controlling the power monitoring system to monitor the real-time power of the currently running laser module 110 .

[0092] Step S107 , selectively controlling the switching of the currently running laser module 110 according to the real-time ambient temperature or the real-time power.

[0093] It is understandable that after starting with a certain laser module 110, the ambient temperature may fluctuate to exceed the operating temperature range corresponding to the laser module 110. In this case, the current laser module 110 will not be able to operate normally, so it is necessary to switch to another laser module 110. Similarly, when the power monitoring system detects that the real-time power of the currently operating laser module 110 is abnormal, it is also necessary to switch the laser module 110 in time to ensure the normal output of the laser.

[0094] Please refer to Figure 5 , Figure 5 The figure shows a sub-step flow chart of step S107. Step S107 may include the following sub-steps:

[0095] Sub-step S1071a, if the real-time power is abnormal, select one of the laser modules 110 that can operate normally and whose operating temperature range is closest to the real-time ambient temperature to obtain a spare module.

[0096] When the real-time power of the currently running laser module 110 is abnormal, after excluding the operating temperature range corresponding to the laser module 110, the operating temperature range closest to the current real-time ambient temperature can be selected from the two adjacent operating temperature ranges.

[0097] It is understandable that the operating temperature range is closest to the real-time ambient temperature, which means that the absolute value of the difference between the upper and lower limits of the operating temperature range and the real-time ambient temperature is the smallest. For example, if the real-time ambient temperature is 60°C, the operating temperature range of the currently running laser module 110 is 40°C~85°C, and the two previous and next operating temperature ranges are 0°C~45°C and 80°C~105°C, respectively. In this case, if the real-time power of the currently running laser module 110 is abnormal, the previous operating temperature range is 15°C away from the real-time ambient temperature, and the next operating temperature range is 20°C away from the real-time ambient temperature. Therefore, the laser module 110 with an operating temperature range of 0°C~45°C is selected as the backup module.

[0098] Sub-step S1072a, controlling the temperature control system to adjust the temperature of the standby module to within its corresponding operating temperature range.

[0099] After the standby module is selected, the real-time ambient temperature has not yet reached the operating temperature range of the standby module. To ensure the normal operation of the standby module, the controller 120 controls the temperature control system to adjust the temperature of the standby module so that the temperature of the standby module reaches its operating temperature range.

[0100] Sub-step S1073a, switching the currently operating laser module 110 to a standby module.

[0101] After the temperature of the standby module reaches its operating temperature range, the currently operating laser module 110 with abnormal real-time power is switched to the standby module.

[0102] Please refer to Figure 6 , Figure 6 The figure shows another sub-step flow chart of step S107. Step S107 may also include the following sub-steps:

[0103] Sub-step S1071b, when the real-time ambient temperature is equal to the middle value of one of the overlapping ranges corresponding to the currently running laser module 110, obtaining the change trend of the ambient temperature within a second preset time period.

[0104] Similarly, obtaining the changing trend of the ambient temperature within the second preset time period may be obtaining the ambient temperature detected by the temperature sensor 130 at least once within the second preset time period, thereby obtaining a specific increasing or decreasing changing trend of the ambient temperature within the second preset time period.

[0105] Sub-step S1072b, if the overlapping range of the real-time ambient temperature includes the lower limit value of the operating temperature range corresponding to the currently running laser module 110, and the ambient temperature shows a downward trend within the second preset time period, the currently running laser module 110 is switched to the laser module 110 corresponding to the lower one of the two operating temperature ranges belonging to the overlapping range.

[0106] The overlapping range where the real-time ambient temperature is located includes the lower limit value of the working temperature range corresponding to the currently running laser module 110, indicating that the overlapping range is in the lowest area of ​​the corresponding working temperature range. In this case, if the ambient temperature shows a downward trend within the second preset time, it means that the ambient temperature has a tendency to move away from the non-overlapping range of the working temperature range corresponding to the currently running laser module 110, and the currently running laser module 110 is switched to the laser module 110 corresponding to the lower one of the two working temperature ranges to which the overlapping range belongs. The switching action of the laser module 110 is executed in advance to avoid drastic fluctuations in the laser output.

[0107] Sub-step S1073b, if the overlapping range of the real-time ambient temperature includes the upper limit value of the working temperature range corresponding to the currently running laser module 110, and the ambient temperature shows an upward trend within the second preset time period, the currently running laser module 110 is switched to the laser module 110 corresponding to the higher one of the two working temperature ranges belonging to the overlapping range.

[0108] The overlapping range where the real-time ambient temperature is located includes the upper limit value of the operating temperature range corresponding to the currently running laser module 110, indicating that the overlapping range is in the highest area of ​​the corresponding operating temperature range. In this case, if the ambient temperature shows an upward trend within the second preset time period, it indicates that the ambient temperature has a tendency to move away from the non-overlapping range of the operating temperature range corresponding to the currently running laser module 110, and the currently running laser module 110 is switched to the laser module 110 corresponding to the higher of the two operating temperature ranges to which the overlapping range belongs.

[0109] Sub-step S1074b, if the overlapping range where the real-time ambient temperature is located includes the upper limit value of the operating temperature range corresponding to the currently running laser module 110, and the ambient temperature shows a downward trend within the second preset time period, or the overlapping range where the real-time ambient temperature is located includes the lower limit value of the operating temperature range corresponding to the currently running laser module 110, and the ambient temperature shows an upward trend within the second preset time period, then the currently running laser module 110 is controlled to continue running.

[0110] The overlapping range of the real-time ambient temperature includes the upper limit value of the operating temperature range corresponding to the currently running laser module 110. In this case, if the ambient temperature shows a downward trend within the second preset time period, it indicates that the ambient temperature has a tendency to approach the non-overlapping range of the operating temperature range corresponding to the currently running laser module 110, thereby maintaining the currently running laser module 110 to continue operating.

[0111] Similarly, the overlapping range of the real-time ambient temperature includes the lower limit value of the operating temperature range corresponding to the currently running laser module 110. In this case, if the ambient temperature shows an upward trend within the second preset time period, it indicates that the ambient temperature has a tendency to approach the non-overlapping range of the operating temperature range corresponding to the currently running laser module 110, thereby maintaining the current running laser module 110 to continue operating.

[0112] In order to ensure that the output wavelength is stable and continuous during the process of switching the laser module 110, in this embodiment, when it is necessary to switch the currently running laser module 110, the current laser module 110 is not immediately shut down, but the input power of the currently running laser module 110 is controlled to gradually decrease to zero, and the input power of the other laser module 110 is controlled to gradually increase from zero.

[0113] The first preset time length and the second preset time length can be set according to actual application conditions. It should be noted that the second preset time length cannot exceed the time length from startup to stabilization of the laser module 110, that is, it cannot exceed the time length for the input power to increase from zero to the maximum value, so as to further ensure that the laser output is continuous and uninterrupted.

[0114] In addition, in this embodiment, in order to ensure the accuracy of the detection result of the temperature sensor 130, the acquired detection data of the temperature sensor 130 is filtered to eliminate the influence of noise and short-term fluctuation on the detection result.

[0115] In summary, the semiconductor laser control method and the semiconductor laser 100 provided in this embodiment have the characteristics of wider applicable ambient temperature range and more stable laser output.

[0116] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A semiconductor laser control method, applied to a semiconductor laser (100), It is characterized in that The semiconductor laser (100) outputs laser light of a constant wavelength within a set temperature range, the semiconductor laser (100) having a plurality of laser modules (110), the set temperature range being divided in sequence by a plurality of operating temperature ranges corresponding to the plurality of laser modules (110); any of the operating temperature ranges comprising an overlapping range partially overlapping with an adjacent operating temperature range, and a non-overlapping range that does not overlap with the remaining operating temperature ranges; The semiconductor laser control method comprises: When receiving a start command, obtaining the initial ambient temperature; If the initial ambient temperature falls within one of the non-overlapping ranges, controlling the laser module (110) corresponding to the non-overlapping range to start; If the initial ambient temperature falls within one of the overlapping ranges, obtaining a change trend of the ambient temperature within a first preset time period; According to the change trend of the ambient temperature within the first preset time period, one of the two laser modules (110) corresponding to the overlapping range is selected and controlled to start; The step of selecting and controlling one of the two laser modules (110) corresponding to the overlapping range to start according to the change trend of the ambient temperature within the first preset time period comprises: If the ambient temperature shows an upward trend within the first preset time period, controlling the laser module (110) corresponding to the higher one of the two operating temperature ranges to which the overlapping range belongs to start; If the ambient temperature shows a downward trend within the first preset time period, controlling the laser module (110) corresponding to the lower one of the two operating temperature ranges to which the overlapping range belongs to start; If the ambient temperature maintains the initial ambient temperature unchanged within the first preset time period, one of the two laser modules (110) corresponding to the overlapping range is selected and controlled to start according to a comparison result between the initial ambient temperature and the middle value of the overlapping range in which it falls.

2. The semiconductor laser control method according to claim 1, It is characterized in that The step of selecting and controlling one of the two laser modules (110) corresponding to the overlapping range to start according to a comparison result between the initial ambient temperature and the middle value of the overlapping range in which the initial ambient temperature falls comprises: If the initial ambient temperature is greater than the intermediate value, controlling the laser module (110) corresponding to the higher one of the two operating temperature ranges to which the overlapping range belongs to start; If the initial ambient temperature is lower than the intermediate value, the laser module (110) corresponding to the lower one of the two operating temperature ranges to which the overlapping range belongs is controlled to start.

3. The semiconductor laser control method according to claim 1, It is characterized in that The semiconductor laser control method further comprises: If the ambient temperature changes from the initial ambient temperature to fall within the non-overlapping range within the first preset time period, the laser module (110) corresponding to the non-overlapping range is controlled to start.

4. The semiconductor laser control method according to claim 1, It is characterized in that The semiconductor laser (100) further comprises a power monitoring system for monitoring the power of the plurality of laser modules (110), and the semiconductor laser control method further comprises: After controlling the laser module (110) to start, continuously acquiring the real-time ambient temperature, and controlling the power monitoring system to monitor the real-time power of the currently running laser module (110); According to the real-time ambient temperature or the real-time power, the currently operating laser module (110) is selectively controlled to be switched.

5. The semiconductor laser control method according to claim 4, It is characterized in that The semiconductor laser (100) further comprises a temperature adjustment system for adjusting the temperature of the plurality of laser modules (110) respectively; the step of selectively controlling the switching of the currently operating laser module (110) according to the real-time power comprises: If the real-time power is abnormal, selecting one of the laser modules (110) that can operate normally and whose operating temperature range is closest to the real-time ambient temperature to obtain a spare module; Controlling the temperature adjustment system to adjust the temperature of the standby module to a range corresponding to the operating temperature; The currently operating laser module (110) is switched to the standby module.

6. The semiconductor laser control method according to claim 4, It is characterized in that The step of selectively controlling the switching of the currently operating laser module (110) according to the real-time ambient temperature comprises: When the real-time ambient temperature is equal to a middle value of one of the overlapping ranges corresponding to the currently operating laser module (110), obtaining a change trend of the ambient temperature within a second preset time period; If the overlapping range in which the real-time ambient temperature is located includes the lower limit value of the operating temperature range corresponding to the currently operating laser module (110), and the ambient temperature shows a decreasing trend within the second preset time period, the currently operating laser module (110) is switched to the laser module (110) corresponding to the lower one of the two operating temperature ranges to which the overlapping range belongs; If the overlapping range in which the real-time ambient temperature is located contains an upper limit value of the operating temperature range corresponding to the currently operating laser module (110), and the ambient temperature shows an upward trend within the second preset time period, the currently operating laser module (110) is switched to the laser module (110) corresponding to the higher one of the two operating temperature ranges to which the overlapping range belongs.

7. The semiconductor laser control method according to claim 4, It is characterized in that The step of selectively controlling the switching of the currently operating laser module (110) according to the real-time ambient temperature or the real-time power comprises: When it is necessary to switch the currently operating laser module (110), the input power of the currently operating laser module (110) is controlled to gradually decrease to zero, and the input power of another laser module (110) is controlled to gradually increase from zero.

8. The semiconductor laser control method according to claim 1, It is characterized in that The semiconductor laser (100) outputs laser light with a wavelength of 976 nm, and / or, The set temperature range is -40°C to 105°C, and / or, The difference between the upper limit and the lower limit of any of the overlapping ranges is 5°C.

9. A semiconductor laser, It is characterized in that The semiconductor laser (100) has a controller (120), and the controller (120) is used to execute the semiconductor laser control method according to any one of claims 1 to 8.

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