Chemical vapor deposition apparatus

Abstract

The application relates to a chemical vapor deposition device. The application comprises a spraying chamber, an adjusting assembly and a driving device. The spraying chamber comprises a bottom plate provided with a plurality of spraying openings. The adjusting assembly is arranged in correspondence with the spraying openings. The driving device is magnetically attracted to the adjusting assembly to drive the adjusting assembly to switch between a first state and a second state. When the adjusting assembly is in the first state, the adjusting assembly is separated from the bottom plate, and substances in the spraying chamber pass through the adjusting assembly and the spraying openings in sequence. When the adjusting assembly is in the second state, the adjusting assembly abuts against the bottom plate, and the adjusting assembly blocks part of the spraying openings on the bottom plate to control the flow of substances at the spraying openings. The application cooperates the driving device with the adjusting assembly to change the arrangement of effective spraying openings, thereby regulating the subsequent distribution of substances, and improving the uniformity of deposited films. Meanwhile, the cooperation mode of the driving device and the adjusting assembly can also reduce the pollution degree and leakage risk of the spraying chamber.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of chemical vapor deposition, in particular to a chemical vapor deposition device. BACKGROUND

[0002] Plasma Enhanced Chemical Vapor Deposition (PECVD) is a kind of chemical vapor thin film deposition process assisted by plasma, which has the advantages of low film forming temperature, good film quality, fast film forming rate, controllable film forming stress, etc., and is commonly used in integrated circuit process, compound semiconductor process, display panel process, photovoltaic cell process, LED, semiconductor laser, etc.

[0003] In the commonly used single-cavity single-piece configuration PECVD equipment, the spray head, vacuum cavity, object table, vacuum exhaust port design, etc. are generally designed in a circular / cylindrical symmetry. Due to the asymmetry in the radial direction, the deposited thin film is prone to form radial asymmetry in film thickness, refractive index and stress, resulting in poor film uniformity. SUMMARY

[0004] The present application provides a chemical vapor deposition device, which can solve the problem of poor uniformity of the deposited film. The technical solution is as follows:

[0005] A chemical vapor deposition device, comprising:

[0006] A spray chamber, the spray chamber comprising a bottom plate provided with a plurality of spray openings;

[0007] An adjusting assembly, the adjusting assembly being located inside the spray chamber, and the adjusting assembly being provided corresponding to the spray openings;

[0008] A driving device, the driving device being located outside the spray chamber, and the driving device being magnetically attracted to the adjusting assembly to drive the adjusting assembly to switch between a first state and a second state; wherein,

[0009] When the adjusting assembly is in the first state, the adjusting assembly is separated from the bottom plate, and the substances in the spray chamber pass through the adjusting assembly and the spray openings in sequence;

[0010] When the adjusting assembly is in the second state, the adjusting assembly abuts against the bottom plate, and the adjusting assembly blocks part of the spray openings on the bottom plate to control the flow of substances at the spray openings.

[0011] In one embodiment, the adjusting assembly comprises a plurality of blocking pieces, and the blocking pieces are arranged at intervals.

[0012] In one of the embodiments, the adjusting assembly further comprises a first magnetic member, which is located on the blocking member and magnetically attracted to the driving device.

[0013] In one of the embodiments, the driving device comprises a lifting rod member and a second magnetic member, one end of the lifting rod member is connected to the second magnetic member, and the second magnetic member is magnetically attracted to the first magnetic member.

[0014] The lifting rod member moves back and forth in a direction away from the bottom plate to drive the blocking member to switch between the first state and the second state.

[0015] In one of the embodiments, the first magnetic member and the second magnetic member are both configured as permanent magnets.

[0016] In one of the embodiments, the magnetic induction direction of the first magnetic member is the same as the first direction.

[0017] The magnetic induction direction of the second magnetic member is opposite to the first direction; wherein,

[0018] The first direction is parallel to the side wall of the spraying chamber.

[0019] In one of the embodiments, the magnetic induction direction of the first magnetic member and the second magnetic member are both the same as the second direction; wherein,

[0020] The second direction is perpendicular to the side wall of the spraying chamber.

[0021] In one of the embodiments, it further comprises a deposition chamber, and the spraying chamber and the driving device are located in the deposition chamber.

[0022] One end of the lifting rod member away from the second magnetic member is fixed to the top wall of the deposition chamber.

[0023] In one of the embodiments, the adjusting assembly further comprises a connecting part, which is used to connect two adjacent blocking members.

[0024] In one of the embodiments, the normal projection of the blocking member on the bottom plate corresponds to the number of the spray ports, which first increases and then decreases in the direction of outward diffusion along the center of the blocking member.

[0025] In one of the embodiments, the bottom plate is configured as a circular member, and the blocking member is configured as a ring-shaped member.

[0026] The diameter of the ring-shaped member is the same as the diameter of the bottom plate.

[0027] In one of the embodiments, the adjusting assembly includes a first annular blocking plate, and an inner diameter of the first annular blocking plate is greater than or equal to one third of a diameter of the bottom plate.

[0028] In one of the embodiments, the adjusting assembly further includes a second annular blocking plate, the second annular blocking plate is arranged around the first annular blocking plate, and an inner diameter of the second annular blocking plate is greater than an outer diameter of the first annular blocking plate, so that the second annular blocking plate and the first annular blocking plate generate a first spacing.

[0029] In one of the embodiments, a width of the second annular blocking plate is greater than a width of the first annular blocking plate.

[0030] In one of the embodiments, the adjusting assembly further includes a third annular blocking plate, the third annular blocking plate is arranged around the second annular blocking plate, and an inner diameter of the third annular blocking plate is greater than an outer diameter of the second annular blocking plate, so that the third annular blocking plate and the second annular blocking plate generate a second spacing.

[0031] In one of the embodiments, a width of the third annular blocking plate is greater than a width of the second annular blocking plate.

[0032] In one of the embodiments, the second spacing is smaller than the first spacing.

[0033] In one of the embodiments, the adjusting assembly further includes a fourth annular blocking plate, the fourth annular blocking plate is arranged around the third annular blocking plate, and an inner diameter of the fourth annular blocking plate is greater than an outer diameter of the third annular blocking plate, so that the fourth annular blocking plate and the third annular blocking plate generate a third spacing.

[0034] In one of the embodiments, a width of the fourth annular blocking plate is smaller than a width of the third annular blocking plate; and / or

[0035] the width of the fourth annular blocking plate is equal to the width of the second annular blocking plate.

[0036] In one of the embodiments, the third spacing is greater than the second spacing; and / or

[0037] the third spacing is the same as the first spacing.

[0038] The technical scheme provided by the embodiment of the present application can have the following beneficial effects: As can be known from the above embodiment, the present application comprises a spraying chamber, an adjusting assembly and a driving device. The spraying chamber comprises a bottom plate provided with a plurality of spraying openings. The adjusting assembly is arranged correspondingly to the spraying openings. The driving device is magnetically attracted to the adjusting assembly, and drives the adjusting assembly to switch between a first state and a second state. When the adjusting assembly is in the first state, the adjusting assembly is separated from the bottom plate, and substances in the spraying chamber pass through the adjusting assembly and the spraying openings in sequence.

[0039] When the adjusting assembly is in the second state, the adjusting assembly abuts against the bottom plate, and the adjusting assembly blocks part of the spraying openings on the bottom plate to control the flow of substances at the spraying openings. The present application changes the arrangement of the effective spraying openings by cooperation of the driving device and the adjusting assembly, so as to regulate and control the subsequent distribution of substances, thereby improving the uniformity of the deposited film. Meanwhile, the cooperation mode of the driving device and the adjusting assembly can also reduce the pollution degree and the leakage risk of the spraying chamber.

[0040] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present application. BRIEF DESCRIPTION OF DRAWINGS

[0041] In order to more clearly illustrate the technical scheme in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0042] Figure 1 Structure schematic diagram of a chemical vapor deposition device in an embodiment of the present application in one perspective.

[0043] Figure 2 Structure schematic diagram of magnetic attraction cooperation between a first magnetic member and a second magnetic member in an embodiment of the present application in one perspective.

[0044] Figure 3 Structure schematic diagram of magnetic attraction cooperation between a first magnetic member and a second magnetic member in an embodiment of the present application in another perspective.

[0045] Figure 4 Structure schematic diagram of a blocking member in an embodiment of the present application in one perspective.

[0046] Figure 5 Structure schematic diagram of a blocking member in an embodiment of the present application in one perspective.

[0047] Figure 6 Structure schematic diagram of cooperation between a blocking member and a bottom plate in an embodiment of the present application.

[0048] Figure 7 A structural schematic view of a blocking piece and a first magnetic piece according to an embodiment of the present application.

[0049] Figure 8 A structural schematic view of a bottom plate according to an embodiment of the present application.

[0050] Legend of reference signs:

[0051] 1, spray chamber; 10, bottom plate; 101, spray port; 2, adjusting assembly; 20, blocking piece; 201, first annular blocking plate; 202, second annular blocking plate; 203, third annular blocking plate; 204, fourth annular blocking plate; 21, first magnetic piece; 22, connecting part; 3, driving device; 31, second magnetic piece; 32, lifting rod piece; 33, control mechanism; 4, deposition chamber; 41, air inlet; 42, air outlet; 43, wafer pedestal.

[0052] W1, first width; W2, second width; W3, third width; W4, fourth width; S1, first spacing; S2, second spacing; S3, third spacing; X, first direction; Y, second direction; S, south pole; N, north pole. DETAILED DESCRIPTION

[0053] A PECVD device is a device for preparing a thin film material, wherein PECVD represents Plasma Enhanced Chemical Vapor Deposition. Such a device utilizes a plasma-excited chemical vapor reaction to deposit a thin film material, and is usually used to prepare semiconductor materials, optical thin films, conductive thin films, etc.

[0054] From the number of wafers processed by the chamber, the PECVD device has a single-chip machine, a multi-chip machine, and a large-batch tube machine. For integrated circuit and semiconductor processes, the requirements are relatively high, and single-chip machines, multi-chip machines are generally used, and as the wafer size in advanced processes becomes larger and larger, single-chip machines become the mainstream equipment.

[0055] However, in the commonly used single-cavity single-chip configuration PECVD device, the spray head, vacuum chamber, object table, vacuum air outlet, etc. are generally designed in a circular / cylindrical symmetric design. Due to the asymmetry in the radial direction, the deposited thin film is prone to form radial asymmetry in film thickness, refractive index, and stress, resulting in poor thin film uniformity.

[0056] The present application aims at the above problems, and provides a chemical vapor deposition device, which can effectively improve the uniformity of the deposited thin film by specifically designing the spray head.

[0057] ReferenceFigure 1 、 Figure 6 and Figure 8 The chemical vapor deposition device comprises a spraying chamber 1, an adjusting assembly 2 and a driving device 3. The spraying chamber 1 comprises a bottom plate 10 provided with a plurality of spraying openings 101. The adjusting assembly 2 is located inside the spraying chamber 1 and is arranged in correspondence with the spraying openings 101. The driving device 3 is located outside the spraying chamber 1 and is magnetically attracted to the adjusting assembly 2 to drive the adjusting assembly 2 to switch between a first state and a second state. Wherein,

[0058] When the adjusting assembly 2 is in the first state, the adjusting assembly 2 is separated from the bottom plate 10, and the substances in the spraying chamber 1 pass through the adjusting assembly 2 and the spraying openings 101 in sequence. When the adjusting assembly 2 is in the second state, the adjusting assembly 2 abuts against the bottom plate 10, and the adjusting assembly 2 blocks part of the spraying openings 101 on the bottom plate 10 to control the flow of substances at the spraying openings 101.

[0059] It should be particularly pointed out that the substances in this embodiment generally refer to process gases provided by a gas supply system in communication with the spraying chamber 1. The following content is referred to as process gases.

[0060] In this embodiment, the user can switch the state of the chemical vapor deposition device according to the process requirements.

[0061] When the user does not need to regulate the distribution of process gases, the chemical vapor deposition device is set to the first state. That is, the driving device 3 outside the spraying chamber 1 and the adjusting assembly 2 inside the spraying chamber 1 are magnetically attracted through the side wall of the spraying chamber 1, the driving device 3 moves away from the bottom plate 10 to drive the adjusting assembly 2 to move until the adjusting assembly 2 is in a suitable position. At this time, the adjusting assembly 2 is independent of the bottom plate 10, and the process gases enter the spraying chamber and then flow through the adjusting assembly 2 and then normally flow out from the spraying openings 101. The adjusting assembly 2 does not affect the flow state of the spraying openings 101, and the adjusting assembly 2 also does not affect the flow of process gases in the spraying chamber.

[0062] When the user needs to regulate the distribution of process gases, the chemical vapor deposition device is switched to the second state. That is, the driving device 3 moves towards the bottom plate 10 to drive the adjusting assembly 2 to move in the same direction until the adjusting assembly 2 inside the spraying chamber 1 abuts against the bottom plate 10. The adjusting assembly 2 blocks part of the spraying openings 101 on the bottom plate 10 to change the arrangement of the spraying openings 101, thereby changing the distribution of process gases flowing out from the spraying openings 101 to achieve the uniformity of the deposited film.

[0063] Specifically, in the embodiment, the side wall of the shower chamber 1 is made of a non-magnetic material. Preferably, the shower chamber 1 is made of an aluminum alloy, quartz, ceramic or the like. The non-magnetic material can reduce the driving stability of the driving device 3 to the adjusting assembly 2.

[0064] The present application can control the distribution of the process gas by setting the distribution of the position connected between the adjusting assembly 2 and the shower head 101, and finally realize the uniformity of the deposited film.

[0065] Further, the cooperation mode of the adjusting assembly 2 and the shower head 101 not only includes the above mode, as long as the adjusting assembly 2 can change the arrangement of the shower head 101, it is within the protection scope of the present application.

[0066] The beneficial effects of the present technical solution are as follows:

[0067] Firstly, in the present application, since the driving device 3 and the adjusting assembly 2 adopt magnetic attraction cooperation, only the adjusting assembly 2 is arranged in the shower chamber 1, and the driving device 3 is arranged outside the shower chamber 1, which can avoid the particles or oil stains generated by the driving device 3 in the shower chamber 1, thereby avoiding the pollution in the shower chamber 1 and affecting the quality and performance of the deposited film. At the same time, it can also ensure the sealing of the shower chamber 1 and reduce the risk of process gas leakage in the shower chamber 1.

[0068] Secondly, the chemical vapor deposition device in the present application has high flexibility. The adjusting assembly 2 can change its up-down position according to the process needs, thereby changing the number and distribution of the effective shower heads 101 and realizing the accurate regulation of the process gas distribution. This design can be quickly adjusted and maintained according to the needs in actual production, thereby improving the production efficiency.

[0069] Thirdly, when the chemical vapor deposition device in the present application is in the first state, the adjusting assembly 2 can avoid the additional influence of itself on the flow of the process gas, thereby further ensuring the quality and uniformity of the film.

[0070] Finally, the present application can also realize the adaptive regulation of the number and distribution of the effective shower heads 101 by the targeted design of the structure of the adjusting assembly 2, so as to meet the requirements of different wafers for deposited films, thereby effectively improving the uniformity and quality of the film.

[0071] In some embodiments, the adjusting assembly 2 includes a plurality of blocking pieces 20, and the blocking pieces 20 are arranged at intervals.

[0072] In the process of regulating the distribution of process gas, when the blocking piece 20 abuts against the bottom plate 10, the blocking piece 20 itself can block the flow of process gas at the spray port 101 on the bottom plate 10, thereby changing the arrangement of the effective spray port 101. The gap between the blocking pieces 20 allows the flow of process gas, ensuring the deposition of process gas.

[0073] In some embodiments, the adjusting assembly 2 further comprises a first magnetic piece 21. The first magnetic piece 21 is located on the blocking piece 20 and is magnetically attracted to the driving device 3.

[0074] Further, with reference to Figure 4 In an optional embodiment, the blocking piece 20 is circular in shape. The first magnetic piece 21 is semicircular in shape and is arranged at the circumference of the blocking piece 20, fitting the edge of the blocking piece 20.

[0075] Further, with reference to Figure 4 The number of first magnetic pieces 21 is three, and they are evenly spaced at the edge of the blocking piece 20.

[0076] In an embodiment, the blocking piece 20 and the first magnetic piece 21 are magnetically connected.

[0077] Specifically, the blocking piece 20 is made of metal, and the first magnetic piece 21 is a permanent magnet. Preferably, the permanent magnet can be one of neodymium iron boron magnet, aluminum nickel cobalt magnet, samarium cobalt magnet, and ferrite magnet.

[0078] In an embodiment, the blocking piece 20 is made of stainless steel, and the blocking piece 20 and the first magnetic piece 21 are connected by welding, clamping, inserting, or bonding.

[0079] In some embodiments, the driving device 3 comprises a lifting rod 32 and a second magnetic piece 31. One end of the lifting rod 32 is connected to the second magnetic piece 31, and the second magnetic piece 31 is magnetically attracted to the first magnetic piece 21. The lifting rod 32 moves back and forth in a direction away from the bottom plate 10 to drive the blocking piece 20 to switch between the first state and the second state.

[0080] In an embodiment, with reference to Figure 7 The lifting rod 32 and the second magnetic piece 31 are magnetically connected.

[0081] Specifically, the lifting rod 32 is made of metal, and the second magnetic piece 31 is a permanent magnet. Preferably, the permanent magnet can be one of neodymium iron boron magnet, aluminum nickel cobalt magnet, samarium cobalt magnet, and ferrite magnet.

[0082] Further, the end of the lifting rod 32 connected with the second magnetic member 31 is provided with a connecting piece. Preferably, the connecting piece is made of metal. The lifting rod 32 and the second magnetic member 31 are magnetically connected through the connecting piece.

[0083] In one embodiment, the lifting rod 32 and the second magnetic member 31 are connected by welding, clamping, inserting, bonding or the like.

[0084] In one embodiment, the lifting rod 32 and the second magnetic member 31 are both provided as three. And are evenly distributed around the spray chamber 1.

[0085] In one embodiment, the first magnetic member 21 and the second magnetic member 31 have the same shape. Preferably, when the spray chamber 1 and the blocking member 20 both adopt a cylindrical / circular shape, the first magnetic member 21 adopts a semicircular arc shape, and the center of the circle coincides with the center of the blocking member 20. The second magnetic member 31 also adopts a semicircular arc shape, and the center of the circle is located on the circular axis of the spray chamber 1.

[0086] Further, the volume of the second magnetic member 31 is greater than the volume of the first magnetic member 21. The second magnetic member 31 is located outside the spray chamber 1, and increasing the volume of the second magnetic member 31 can increase the magnetic attraction force between the first magnetic member 21 and the second magnetic member 31, and improve the stability of the blocking member 20 during movement.

[0087] In some embodiments, the magnetic induction line direction of the first magnetic member 21 is the same as the first direction X. The magnetic induction line direction of the second magnetic member 31 is opposite to the first direction X. Wherein, the first direction X is parallel to the side wall of the spray chamber 1.

[0088] It should be noted that the magnetic induction line direction involved in the present application refers to the direction from the north pole N to the south pole S outside the first magnetic member 21 and the second magnetic member 31.

[0089] Specifically, referring to Figure 2 , the polarities of the first magnetic member 21 and the second magnetic member 31 are placed in opposite directions.

[0090] When the driving device 3 drives the blocking member 20 to move, the north pole N located at one end of the first magnetic member 21 and the south pole S located at one end of the second magnetic member 31 correspond and attract each other. The south pole S located at the other end of the first magnetic member 21 and the north pole N located at the other end of the second magnetic member 31 correspond and attract each other.

[0091] Through the mutual attraction of the two ends of the first magnetic member 21 and the second magnetic member 31, this arrangement can effectively increase the magnetic attraction force between the first magnetic member 21 and the second magnetic member 31, and further increase the stability of the blocking member 20 during movement.

[0092] In some embodiments, the magnetic field lines of the first magnetic member 21 and the second magnetic member 31 are in the same direction as the second direction Y. The second direction Y is perpendicular to the side wall of the shower chamber 1.

[0093] Specifically, referring to Figure 3 , the polarities of the first magnetic member 21 and the second magnetic member 31 are arranged in the same direction.

[0094] The south pole S of the first magnetic member 21 corresponds to the north pole N of the second magnetic member 31 and is attracted to each other. In this way, the entire side of the first magnetic member 21 and the entire side of the second magnetic member 31 are attracted to each other, thereby increasing the attractive area of the first magnetic member 21 and the second magnetic member 31, increasing the attractive force between the first magnetic member 21 and the second magnetic member 31, and improving the stability of the blocking member 20 during movement.

[0095] In some embodiments, the chemical vapor deposition device further comprises a deposition chamber 4, and the shower chamber 1 and the driving device 3 are located in the deposition chamber 4. The end of the lifting rod member 32 away from the second magnetic member 31 is fixed to the top wall of the deposition chamber 4.

[0096] Referring to Figure 1 , the driving device 3 is arranged in the deposition chamber 4 and outside the shower chamber 1, which can avoid the particles or oil stains generated by the driving device 3 in the shower chamber 1, causing pollution in the shower chamber 1, and further affecting the quality and performance of the deposited film. At the same time, it can also ensure the sealing of the shower chamber 1 and reduce the risk of process gas leakage in the shower chamber 1

[0097] In some embodiments, the driving device 3 further comprises a control mechanism 33. Preferably, the control mechanism 33 is a stepper motor.

[0098] Firstly, by changing the lifting and falling of the blocking member 20 through the menu parameter setting of the control mechanism 33, the distribution state of the process gas entering the deposition chamber is changed, which provides a new degree of freedom for process control, is more conducive to process development, and provides flexibility for process debugging.

[0099] Secondly, the lifting rod member 32 is arranged on the blocking member 20, and the lifting rod member 32 penetrates the top of the deposition chamber and is connected to the control mechanism, so that the control mechanism controls the lifting and falling of the blocking member. This design avoids complex control devices and reduces the manufacturing and maintenance costs of the equipment.

[0100] In some embodiments, the number of the blocking pieces 20 corresponding to the number of the spray ports 101 at the orthographic projection of the bottom plate 10 increases first and then decreases in the direction spreading outwards from the center of the blocking piece 20. That is to say, the blocking pieces 20 form a blocking structure with the inner part sparse and the outer part dense. This arrangement can effectively solve the problem of uneven thickness of the thin film deposited on the wafer due to the deposition rate of the outer ring area being faster than that of the center position. It can be understood that when the chemical vapor deposition device is in the adjusting state, the blocking piece 20 can block more flow of the spray ports 101 due to the dense structure of the outer ring part, so that the deposition rate of the process gas in the outer ring part is reduced, and the thickness of the thin film in the outer ring part of the wafer is also reduced. The uniformity of the deposited thin film is achieved.

[0101] In some embodiments, the adjusting assembly 2 further comprises a connecting part 22 for connecting two adjacent blocking pieces 20.

[0102] In one embodiment, referring to Figure 4 , the connecting part 22 can be provided as a connecting bridge. The number of the connecting parts 22 between the two blocking pieces 20 is greater than or equal to 3. And the distance between the connecting parts 22 is equal. This arrangement can improve the stability of the connection between the blocking pieces 20.

[0103] In some embodiments, referring to Figure 1 , the adjusting assembly 2 comprises a first annular blocking plate 201, and the inner diameter of the first annular blocking plate 201 is greater than or equal to one third of the diameter of the bottom plate 10.

[0104] In some embodiments, referring to Figure 4 and Figure 5 , the adjusting assembly 2 further comprises a second annular blocking plate 202, the second annular blocking plate 202 is arranged around the first annular blocking plate 201, and the inner diameter of the second annular blocking plate 202 is greater than the outer diameter of the first annular blocking plate 201, so that the second annular blocking plate 202 and the first annular blocking plate 201 generate a first spacing S1.

[0105] Continuing to refer to Figure 4 , the first annular blocking plate 201 and the second annular blocking plate 202 are connected and fixed by three connecting parts 22.

[0106] Specifically, when the chemical vapor deposition device is switched to the adjusting state, the first annular blocking plate 201 and the second annular blocking plate 202 are in contact with the bottom plate 10, and the first annular blocking plate 201 and the second annular blocking plate 202 block the spray ports 101 passing through the blocking bottom plate 10, so as to adjust the arrangement of the spray ports 101, and then control the distribution of the process gas, so as to adjust the thickness uniformity of the deposited thin film.

[0107] In some embodiments, referring to Figure 4 and Figure 5 , the width of the second annular blocking plate 202 is greater than the width of the first annular blocking plate 201. For the sake of readability, the width of the first annular blocking plate 201 referred to in the subsequent content is referred to as the first width W1. The width of the second annular blocking plate 202 is referred to as the second width W2.

[0108] In the single wafer thin film deposition process, the film thickness deposition rate of the outer annular region of the wafer is greater than the film thickness deposition rate at the center position of the wafer. Therefore, the second width W2 is set to be greater than the first width W1. Reflected on the bottom plate 10 is that the wider second annular blocking plate 202 blocks more shower nozzles 101, reduces the outflow of process gas, and thus reduces the film thickness deposition rate of the outside of the wafer, reduces the film thickness deposited on the outside of the wafer, and realizes the uniformity of the deposited thin film on the wafer.

[0109] In some embodiments, the second width W2 is equal to the first width W1.

[0110] In some embodiments, referring to Figure 4 and Figure 5 , the adjusting assembly 2 further comprises a third annular blocking plate 203, the third annular blocking plate 203 is arranged around the second annular blocking plate 202, and the inner diameter of the third annular blocking plate 203 is greater than the outer diameter of the second annular blocking plate 202, so that the second spacing S2 is generated between the third annular blocking plate 203 and the second annular blocking plate 202.

[0111] Continuing to refer to Figure 4 and Figure 5 , the second annular blocking plate 202 and the third annular blocking plate 203 are connected and fixed by 3 connecting parts 22.

[0112] Specifically, when the chemical vapor deposition device is switched to the adjusting state, the first annular blocking plate 201, the second annular blocking plate 202 and the third annular blocking plate 203 are in contact with the bottom plate 10, the first annular blocking plate 201, the second annular blocking plate 202 and the third annular blocking plate 203 block part of the shower nozzles 101 of the bottom plate 10, so as to realize the adjustment of the arrangement of the shower nozzles 101, and then control the distribution of the process gas, so as to realize the uniform adjustment of the thickness of the deposited thin film.

[0113] In some embodiments, referring to Figure 2 , the width of the third annular blocking plate 203 is greater than the width of the second annular blocking plate 202. Also for the sake of readability, the width of the third annular blocking plate 203 referred to in the subsequent content is referred to as the third width W3.

[0114] The third width W3 is set to be greater than the second width W2, in combination with the first width W1, the blocker 20 forms an inner sparse and outer dense structure. Reflected on the base plate 10, the wider third annular blocker 203 and the second annular blocker 202 block more shower nozzles 101, reduce the outflow of process gas, and further reduce the deposition rate of film thickness on the outside of the wafer, reduce the deposition of film thickness on the outside of the wafer, to achieve the uniformity of the deposited film on the wafer.

[0115] Further, the second spacing S2 is smaller than the first spacing S1. It needs to be particularly pointed out that the smaller the spacing between the blockers 20, the fewer the shower nozzles 101 through which the process gas can pass, reflected on the base plate 10. The smaller the second spacing S2 on the outside means that the number of peripheral shower nozzles 101 is smaller, to further regulate the distribution of process gas and improve the uniformity of the deposited film.

[0116] In some embodiments, referring to Figure 1 , the adjusting assembly 2 further comprises a fourth annular blocker 204, the fourth annular blocker 204 is arranged around the third annular blocker 203, and the inner diameter of the fourth annular blocker 204 is greater than the outer diameter of the third annular blocker 203, so that the third spacing S3 is generated between the fourth annular blocker 204 and the third annular blocker 203.

[0117] Continuing to refer to Figure 4 and Figure 5 , the fourth annular blocker 204 and the third annular blocker 203 are connected and fixed by 3 connecting parts 22.

[0118] Specifically, when the chemical vapor deposition device is switched to the adjusting state, the first annular blocker 201, the second annular blocker 202, the third annular blocker 203 and the fourth annular blocker 204 form an integrated whole, for the sake of understanding, which can be called integrated blocker 20.

[0119] The integrated blocker 20 is in contact with the base plate 10, and blocks part of the shower nozzles 101 of the base plate 10, to realize the adjustment of the arrangement of the shower nozzles 101, and further regulate the distribution of process gas, to realize the uniformity of the thickness of the deposited film.

[0120] In some embodiments, referring to Figure 4 and Figure 5 , the width of the fourth annular blocker 204 is smaller than the width of the third annular blocker 203. For the sake of readability, the width of the fourth annular blocker 204 involved in the subsequent content is referred to as the fourth width W4.

[0121] Specifically, the fourth width W4 is smaller than the third width W3. In this way, the first ring-shaped blocking plate 201, the second ring-shaped blocking plate 202, the third ring-shaped blocking plate 203 and the fourth ring-shaped blocking plate 204 form a structure in which the inner ring to the outer ring first increases and then decreases. A blocking member 20 with a sparse-dense-sparse structure from the inside to the outside is formed. On the bottom plate 10, the wider third ring-shaped blocking plate 203 blocks more shower nozzles 101, reduces the outflow of process gas, and in turn reduces the deposition rate of the film thickness outside the wafer, thereby reducing the deposition film thickness outside the wafer to achieve the uniformity of the deposited film on the wafer.

[0122] In some embodiments, the fourth width W4 is equal to the second width W2.

[0123] In some embodiments, the third spacing S3 is greater than the second spacing S2.

[0124] In some embodiments, the third spacing S3 is the same as the first spacing S1.

[0125] In one embodiment, the width of the first ring-shaped blocking plate 201, the width of the second ring-shaped blocking plate 202, and the width of the fourth ring-shaped blocking plate 204 are all 1 / 15 in the proportion of the blocked shower nozzles 101, and the width of the third ring-shaped blocking plate 203 is 2 / 15.

[0126] Further, the first spacing S1 and the third spacing S3 are both 2 / 15. The second spacing S2 is 1 / 15.

[0127] In some embodiments, referring to Figure 1 , the deposition chamber 4 further comprises a gas inlet 41 and a gas outlet 42. The gas inlet 41 is connected to the chemical vapor deposition device to deliver process gas to the chemical vapor deposition device.

[0128] In some embodiments, the adjusting assembly 2 can comprise a blocking member 20. By opening flow-through holes arranged at intervals on the blocking member 20, the other parts of the blocking member 20 are used to regulate the distribution of the effective shower nozzles 101, and the flow-through holes are used for the flow-through of process gas.

[0129] In an alternative embodiment, a circular through hole with a diameter greater than or equal to one-third of the diameter of the blocking plate member is opened at the center of the blocking member 20, and then a plurality of circular arc-shaped through holes with widths of S1, S2 and S3 and spacings of W1, W2 and W3 are sequentially opened from the inside to the outside around the circular through hole.

[0130] In some embodiments, referring to Figure 1 , the chemical vapor deposition device further comprises a wafer pedestal 43. The wafer pedestal 43 is located in the deposition chamber 4, and the wafer pedestal 43 is located directly below the shower chamber 1.

[0131] In some embodiments, the wafer base 43 comprises a tray. The wafer is placed on the tray for depositing a thin film.

[0132] In some embodiments, step one: set up a blocking piece and a driving device in a PECVD device.

[0133] The blocking piece 20 is adjustable in height, and its initial position is in contact with the top wall of the shower chamber 1. In this embodiment, the blocking piece 20 is made of metal, and the base plate 10 is made of stainless steel. The diameter of the blocking piece 20 is 30 cm, and the thickness is 5 mm.

[0134] Step two: adjust the position of the blocking piece 20 through the driving device 3 according to the process requirements. For example, when it is needed to increase the distribution range of the process gas, the blocking piece 20 can be lifted to a position 10 cm away from the shower head; when it is needed to reduce the distribution range of the process gas, the blocking piece 20 can be lowered to a position 2 cm away from the shower head or in contact with the base plate 10.

[0135] Step three: during the process, the process gas enters the deposition chamber 4 through the shower port 101 after entering the shower chamber 1 from the gas inlet 41. In this embodiment, nitrogen is used as the process gas, and the flow rate is set to 1.5 L / min.

[0136] Step four: when the blocking piece 20 is lowered to be in direct contact with the shower head, the gas distribution into the deposition chamber 4 will be regulated due to the change of the effective shower port 101 arrangement caused by the blocking piece 20. In this embodiment, when the blocking piece 20 is in direct contact with the base plate 10, the distribution range of the process gas can be reduced to 70% of the original, thereby improving the quality and uniformity of the thin film.

[0137] Step five: the lifting and lowering of the blocking piece 20 is controlled through the control mechanism 33. In this embodiment, the control mechanism 33 is configured as a stepper motor, and the rotation speed is set to 100 rpm, which can accurately control the lifting and lowering position of the blocking piece 20 through programming.

[0138] In this embodiment, the position of the blocking piece 20 is flexibly adjusted according to the process requirements, thereby regulating the distribution of the process gas and improving the process efficiency and the quality of the thin film.

[0139] The terms "first", "second", and similar terms used in the specification and claims of the present application do not represent any order, number, or importance, but are only used to distinguish different components.

[0140] Also, the use of "a" or "an" or "the" are not intended to be limiting in that there is at least one, but there can be more than one. "Plural" or "a plurality" means two or more. Unless otherwise indicated, the terms "front," "back," "up," "down," and the like in reference to a structure that can be understood as a relative position or as spatial orientation.

Claims

1. A chemical vapor deposition apparatus characterized by comprising: The utility model relates to a spray chamber, which comprises a bottom plate with a plurality of spray openings; an adjusting assembly located inside the spray chamber and corresponding to the spray openings; and a driving device located outside the spray chamber and magnetically coupled with the adjusting assembly without contact to drive the adjusting assembly to switch between a first state and a second state. When the adjusting assembly is in the first state, the adjusting assembly is separated from the bottom plate, and substances in the spray chamber pass through the adjusting assembly and the spray openings in sequence. When the adjusting assembly is in the second state, the adjusting assembly abuts against the bottom plate, and the adjusting assembly blocks part of the spray openings on the bottom plate to control the flow of substances at the spray openings. The adjusting assembly comprises a plurality of blocking pieces arranged at intervals, and the blocking pieces correspond to the number of spray openings in the orthographic projection on the bottom plate, and the number of blocking pieces increases first and then decreases in the outward diffusion direction of the center of the blocking pieces. The adjusting assembly further comprises a first magnetic piece located on the blocking piece and magnetically coupled with the driving device. The driving device comprises a lifting rod and a second magnetic piece, one end of the lifting rod is connected with the second magnetic piece, the second magnetic piece is magnetically coupled with the first magnetic piece without contact, and the lifting rod moves back and forth in the direction away from the bottom plate to drive the blocking piece to switch between the first state and the second state. The first magnetic piece and the second magnetic piece are both configured as permanent magnets.

2. The chemical vapor deposition apparatus according to claim 1, wherein The magnetic induction line direction of the first magnetic piece is the same as the first direction.

3. The chemical vapor deposition apparatus according to claim 2, wherein The magnetic induction line direction of the second magnetic piece is opposite to the first direction. The first direction is parallel to the side wall of the spray chamber. The magnetic induction line directions of the first magnetic piece and the second magnetic piece are both the same as the second direction.

4. The chemical vapor deposition apparatus according to claim 2, wherein The second direction is perpendicular to the side wall of the spray chamber. The spray chamber and the driving device are located in a deposition chamber.

5. The chemical vapor deposition apparatus according to claim 1, wherein The adjusting assembly further comprises a connecting part for connecting adjacent two blocking pieces.

6. The chemical vapor deposition apparatus according to claim 1, wherein The bottom plate is configured as a circular piece, and the blocking piece is configured as a ring-shaped piece.

7. The chemical vapor deposition apparatus according to claim 6, wherein The diameter of the ring-shaped piece is the same as the diameter of the bottom plate. The adjusting assembly comprises a first ring-shaped blocking plate, and the inner diameter of the first ring-shaped blocking plate is greater than or equal to one third of the diameter of the bottom plate.

8. The chemical vapor deposition apparatus according to claim 7, wherein The adjusting assembly further comprises a second ring-shaped blocking plate arranged around the first ring-shaped blocking plate, and the inner diameter of the second ring-shaped blocking plate is greater than the outer diameter of the first ring-shaped blocking plate to generate a first spacing between the second ring-shaped blocking plate and the first ring-shaped blocking plate.

9. The chemical vapor deposition apparatus according to claim 8, wherein The width of the second ring-shaped blocking plate is greater than the width of the first ring-shaped blocking plate.

10. The chemical vapor deposition apparatus according to claim 9, wherein ​ 11. The chemical vapor deposition apparatus according to claim 9, wherein The adjusting assembly further comprises a third annular blocking plate, which is arranged around the second annular blocking plate, and an inner diameter of the third annular blocking plate is greater than an outer diameter of the second annular blocking plate, so that a second spacing is generated between the third annular blocking plate and the second annular blocking plate.

12. The chemical vapor deposition apparatus according to claim 11, wherein A width of the third annular blocking plate is greater than a width of the second annular blocking plate.

13. The chemical vapor deposition apparatus of claim 11, wherein The second spacing is smaller than the first spacing.

14. The chemical vapor deposition apparatus of claim 11, wherein The adjusting assembly further comprises a fourth annular blocking plate, which is arranged around the third annular blocking plate, and an inner diameter of the fourth annular blocking plate is greater than an outer diameter of the third annular blocking plate, so that a third spacing is generated between the fourth annular blocking plate and the third annular blocking plate.

15. The chemical vapor deposition apparatus according to claim 14, wherein A width of the fourth annular blocking plate is smaller than a width of the third annular blocking plate; and / or The width of the fourth annular blocking plate is equal to the width of the second annular blocking plate.

16. The chemical vapor deposition apparatus of claim 15, wherein The third spacing is greater than the second spacing; and / or The third spacing is the same as the first spacing.

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