Preparation method and application of a multi-color perovskite quantum dot patterned film

Abstract

The application discloses a kind of multicolor perovskite quantum dot patterning film preparation method and application.The method is prepared by mixing halogen perovskite precursor in-situ perovskite quantum dot / PVDF composite film of pure red light in PVDF polymer, and its luminous efficiency and stability are improved by heat annealing process.Selective ultraviolet exposure is carried out on the film using mask, and the exposed area is changed from red light to green light using the light-induced phase separation phenomenon of mixed halogen perovskite quantum dots, so that multicolor perovskite quantum dot / PVDF composite film is obtained.The preparation method of the application is simple and efficient, and can be widely used in optoelectronic devices, display devices and other fields.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of quantum dot materials, and in particular to a preparation method of a multi-color perovskite quantum dot patterned film and application thereof. The application is application of the multi-color perovskite quantum dot patterned film in the fields of photoelectric devices and display devices. The application prepares a perovskite quantum dot / PVDF composite film with pure red light in advance, and realizes the color conversion of the film from single red light to multi-color (red light and green light) through specific heat annealing treatment and patterned exposure, thereby providing a new solution for multifunctionalization and customization of photoelectric devices and display devices. BACKGROUND

[0002] Perovskite quantum dots, as a new type of nanomaterial, have attracted extensive attention due to their unique photoelectric properties. The high quantum yield, tunable band gap and convenient preparation method endow them with broad application prospects in the fields of photoelectric devices, display technology and the like. However, the current preparation technology of perovskite quantum dots still faces many bottlenecks, such as complex process, low output efficiency and poor stability, and the like, which need to be solved urgently. In addition, how to innovatively realize the precise patterned deposition of multi-color perovskite quantum dots to meet the increasingly diversified and customized requirements of photoelectric devices constitutes another technical challenge. Therefore, it is of great significance to develop a simple and efficient multi-color perovskite quantum dot patterning technology for promoting the in-depth application of perovskite quantum dots in the field of photoelectric devices.

[0003] The synthesis paths of perovskite quantum dots are various, mainly including solution method, gas phase method and mechanical method. Among them, the solution method has become the preferred preparation method for many researchers due to its obvious advantages of simple operation and economical cost. The method usually takes organic metal halide and organic halide as raw materials to generate perovskite quantum dots under specific conditions. By accurately controlling the proportion of raw materials, reaction conditions and the like, the particle size, morphology and optical properties of perovskite quantum dots can be flexibly controlled. Although the solution method has many advantages, there are also problems that cannot be ignored, such as the possible introduction of impurities in the synthesis process and the relatively weak stability of quantum dots. In addition, the perovskite quantum dots prepared by the solution method often need to be subjected to a series of subsequent treatments to improve the quality, which undoubtedly increases the complexity and cost of the process.

[0004] Currently, the mainstream methods of perovskite quantum dot patterning technology include inkjet printing, micro-contact printing and photolithography technology. As a non-contact printing technology, inkjet printing can directly spray perovskite quantum dot solution onto the substrate surface to construct the required pattern. This method is simple to operate and has high positioning accuracy, but the stability of the ink and the possible agglomeration of quantum dots during printing need to be properly addressed. Micro-contact printing relies on the principle of mechanical contact to accurately transfer perovskite quantum dots to the substrate to form a pattern. Although this method has high precision and good repeatability, it requires high precision equipment and operation skills. Photolithography technology uses photosensitive materials for patterning and can achieve precise positioning of perovskite quantum dots at the nanoscale. However, photolithography technology relies on expensive photolithography equipment and photoresist, and the process is relatively complex.

[0005] In summary, the background technology of multi-color perovskite quantum dot patterning covers two major core blocks: perovskite quantum dot synthesis process and patterning technology. Although existing methods can achieve the preparation and patterning of perovskite quantum dots to some extent, many problems still need to be further studied and technological innovation. Therefore, developing a simple and efficient multi-color perovskite quantum dot patterning technology has great theoretical value and practical significance for promoting the widespread application of perovskite quantum dots in the field of optoelectronic devices. SUMMARY

[0006] The present application relates to a multi-color perovskite quantum dot patterned film preparation method and application, in particular to a method for realizing multi-color patterning of CsPb(Br / I)3 / PVDF composite film by accurately controlling the composition of perovskite precursor solution, heat treatment conditions and light-induced mixed halogen phase separation reaction, to meet the demand for customized color distribution of high-performance perovskite quantum dot composite film materials in the field of optoelectronic devices, display devices and the like.

[0007] The present application adopts the following technical solutions:

[0008] A multi-color perovskite quantum dot patterned film preparation method, comprising the following steps:

[0009] Step 1: Preparation of perovskite precursor solution

[0010] Dissolve CsI, DMAPbBr3 and DMAPbI3 perovskite precursors and PVDF powder in a mixed solvent composed of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), and add a ligand to the mixed solvent to obtain a perovskite precursor solution;

[0011] Step 2: Synthesis of CsPb(Br / I)3 / PVDF composite film

[0012] The perovskite precursor solution prepared in step 1 is uniformly coated on the surface of a glass substrate by a doctor blade, spin coating or inkjet printing method to form a transparent and uniform-thickness thin film; then, in an air environment at 10-80 ℃, the CsPb(Br / I)3 quantum dots are grown in situ by solvent evaporation and treated for 3-480 minutes to obtain an orange-yellow CsPb(Br / I)3 / PVDF composite film;

[0013] Step 3: thermal annealing treatment

[0014] The composite film obtained in step 2 is placed on a heating table together with the glass substrate, and thermal annealing treatment is performed according to the preset heating temperature and heating time to form a red CsPb(Br / I)3 / PVDF composite thin film, which is then peeled off from the glass substrate;

[0015] Step 4: multi-color patterning

[0016] The composite thin film is selectively exposed to light using a photomask technique, and by alignment and exposure control, the composite thin film is exposed to monochromatic light or continuous visible light sources with a power density of 1-10000 mW cm -3 , a wavelength of 254-405 nm, and an exposure time of 1-1000 hours to meet the needs of different pattern resolutions and color depths; through a light-induced mixed halogen phase separation reaction, the structure evolution inside the thin film is triggered to precisely construct a perovskite quantum dot pattern with multiple colors on the composite film.

[0017] Specifically, the preparation method comprises the following steps:

[0018] 1. Preparation of perovskite precursor solution

[0019] (1) Preparation of multi-component PVDF solution: PVDF powders with different molecular weights (Mw = 70000, 400000 and 1000000) are dissolved in a mixed solvent of N, N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) in different volume ratios (DMF:DMSO = 1:0, 5:1, 4:1, 3:1, 2:1, 3:2, 1:1 and 0:1) at 80 ℃ until completely transparent and uniform.

[0020] (2) Dissolution of perovskite components: set the CsI content to 0.03 mmol, and dissolve the DMAPbI3 / DMAPbBr3 mixture with different molar ratios (3:1, 2:1, 1:1, 1:2 and 1:3, respectively) in the PVDF solution prepared above to ensure uniform dispersion of the CsPb(I / Br)3 perovskite components in the polymer matrix.

[0021] (3) Optimization of precursor solution preparation: In the preferred scheme, 0.03 mmol of CsI, 0.012 mmol of DMAPbI3, 0.018 mmol of DMAPbBr3, and 0.75 g of PVDF powder with Mw=1000000 were added to a mixed solvent of 5 mL of DMF and 2.5 mL of DMSO. On this basis, different concentrations of imidazole iodide ligands (0.0002 mmol, 0.0005 mmol, 0.0008 mmol, 0.001 mmol, 0.002 mmol) were added to optimize the performance of the precursor solution and effectively promote the generation of high-quality CsPb(I / Br)3 quantum dots. The resulting precursor solution was stored in a refrigerator for subsequent use.

[0022] 2. Synthesis of CsPb(Br / I)3 / PVDF composite film

[0023] The precursor solution prepared above was uniformly coated on the surface of a glass substrate to form a transparent and uniform-thickness thin film. Subsequently, the substrate coated with the precursor solution was placed in a blast furnace and treated for 15 minutes by evaporating the DMF / DMSO solvent and growing CsPb(I / Br)3 quantum dots in situ in an air environment of 65 o C, to finally obtain an orange-yellow CsPb(Br / I)3 / PVDF composite film.

[0024] 3. Thermal annealing treatment

[0025] The resulting composite film was placed on a heating stage together with the glass substrate, and precise thermal annealing treatment was performed according to a series of preset heating temperatures (100 o C, 120 o C, 140 o C, 160 o C, 180 o C, and 200 o C) and heating times (20 s, 40 s, 60 s, 80 s, and 100 s). After the annealing was completed, the red CsPb(Br / I)3 / PVDF composite thin film formed was peeled off from the glass substrate.

[0026] 4. Multicolor patterning

[0027] The composite thin film was selectively exposed to a specific power density (200 mW / cm²) and wavelength (365 nm) of ultraviolet light source for an exposure time in the range of 1-1000 hours by means of a photomask technique. Through a light-induced mixed halide phase separation reaction, structural evolution was induced inside the thin film, thereby precisely constructing a regular multicolor perovskite quantum dot pattern on the composite film.

[0028] Further, in step 1, the PVDF powder used in the PVDF solution configuration has a molecular weight Mw of 70,000-1,000,000, for example, Mw = 70,000, 400,000, or 1,000,000, and the volume ratio of DMF:DMSO is 1-5:0-3, for example, the volume ratio of DMF:DMSO is 1:0, 5:1, 4:1, 3:1, 2:1, 3:2, 1:1, or 0:1.

[0029] Further, in step 1, in the perovskite precursor solution, the molar ratio of CsI to DMAPbI3+DMAPbBr3 is 3-1:1-3, for example, 3:1, 2:1, 1:1, 1:2, or 1:3; the molar ratio of DMAPbI3 to DMAPbBr3 is 1:0.1-0.1:1; and the concentration of CsI in the perovskite precursor solution is 0.001-0.2 mmol / mL.

[0030] Further, in step 1, the ligand can be selected from at least one of oleic acid, oleylamine, imidazole iodide, alkyl thiols, tri-n-octyl phosphine, and tri-n-butyl phosphine, and the concentration of the ligand in the perovskite precursor solution is 0.0002-0.002 mmol / mL.

[0031] Further, in step 3, the preset heating temperature range in the thermal annealing process is 100-200°C, and the heating time can be selected from 20 s-100 s.

[0032] Further, in step 4, in the multi-color patterning process, the exposure wavelength can be selected from monochromatic light (for example, ultraviolet light) of 254, 365, and 405 nm or continuous visible light sources such as xenon lamps and mercury lamps, and the exposure time can be adjusted according to requirements.

[0033] Further, in step 4, in the multi-color patterning process, the mask plate material is photoresist or a metal mask plate.

[0034] Further, the color of the multi-color perovskite quantum dot patterned film can be adjusted in the range of red light to green light.

[0035] The multi-color perovskite quantum dot patterned film prepared by the preparation method according to any one of the above has applications in Micro-LED, quantum dot light-emitting diode (QLED) displays, solar cells, or photodetectors.

[0036] Advantages of the present application:

[0037] In order to solve the problems in the prior art, the application provides a preparation method and application of a multi-color perovskite quantum dot patterned film. BRIEF DESCRIPTION OF DRAWINGS

[0038] Figure 1 A preparation schematic diagram of the multi-color perovskite quantum dot patterned composite film in Example 1 of the application.

[0039] Figure 2 A photo of the red CsPb(Br / I)3 / PVDF composite film under ultraviolet lamp irradiation in Example 1 of the application.

[0040] Figure 3 A fluorescence spectrum of the multi-color perovskite quantum dot patterned composite film in Example 1 of the application.

[0041] Figure 4 A fluorescence spectrum of the multi-color perovskite quantum dot patterned composite film in Example 2 of the application.

[0042] Figure 5 A fluorescence spectrum of the multi-color perovskite quantum dot patterned composite film in Example 3 of the application.

[0043] Figure 6 A fluorescence spectrum of the multi-color perovskite quantum dot patterned composite film in Example 4 of the application.

[0044] Figure 7 A fluorescence spectrum of the multi-color perovskite quantum dot patterned composite film in Example 5 of the application. DETAILED DESCRIPTION

[0045] The technical solutions of the application will be further described in detail below with reference to specific examples. It should be understood that the following examples are only used to illustrate and explain the application, and should not be interpreted as limiting the scope of protection of the application. Any technology realized based on the above description of the application is covered within the scope of protection intended by the application.

[0046] Unless otherwise specified, the raw materials and reagents used in the following examples are commercially available or can be prepared by known methods.

[0047] Example 1

[0048] 0.03 mmol CsI, 0.012 mmol DMAPbI3, 0.018 mmol DMAPbBr3, and 0.75 g PVDF powder (Mw = 1,000,000) were added to 5 mL DMF and 2.5 mL DMSO solvents, respectively. 0.002 mmol imidazole iodide ligand was added to prepare a CsPb(I / Br)3 precursor solution. The precursor solution was coated onto a glass substrate to form a uniformly thick transparent film. The film was then placed in a blast furnace and heated at 65°C. o At C100°C for 15 min, DMF / DMSO solvent was evaporated in air and CsPb(I / Br)3 quantum dots were grown in situ to obtain an orange-yellow thin film. The thin film, along with a glass substrate, was placed on a heating stage and heated to 160°C. o Annealing was performed at C for 60 s, followed by peeling from the glass substrate to obtain a red CsPb(Br / I)3 / PVDF composite film with a thickness of 8 micrometers. The composite film was then selectively exposed to a power density of 200 mW / cm² using a metal photomask. 2 Irradiation with a 365 nm ultraviolet lamp for 7 hours induces a photo-induced mixed halogen phase separation reaction, thereby obtaining a regular multicolor perovskite quantum dot pattern. Figure 1 ).

[0049] The red CsPb(Br / I)3 / PVDF composite film obtained in Example 1, as Figure 2 The visualization evidence reveals that when the composite film is excited by ultraviolet radiation, it exhibits uniform and significant pure red fluorescence emission, with a bright color and no obvious mottles, confirming excellent fluorescence performance and good film uniformity. To achieve more precise spatial color control and multicolor fluorescence display, a photomask-assisted selective ultraviolet exposure technique was employed. By subjecting the CsPb(Br / I)3 / PVDF composite film to patterned ultraviolet irradiation, photoinduced halogen migration in localized areas was successfully induced, thereby constructing regularly distributed multicolor regions on a single film substrate. Figure 3 Fluorescence spectroscopy clearly revealed the multicolor emission characteristics of this composite film after exposure treatment. The results showed that there were two sets of significant fluorescence peaks in the film: one set was located in the red region at a wavelength of 630 nm, and its spectral position matched the fluorescence characteristics of pure red CsPb(Br / I)3 quantum dots, indicating that the luminescence properties of the original red quantum dots were retained in a specific region; the other set was located in the green region at a wavelength of 514 nm, indicating that under ultraviolet exposure, some quantum dots underwent halide ion migration to form new bromide-rich perovskite quantum dots, thus transforming into a form that emits green light.

[0050] Example 2

[0051] CsPb(I / Br)3 precursor solution was prepared by adding 0.03 mmol of CsI, 0.012 mmol of DMAPbI3, 0.018 mmol of DMAPbBr3, and 0.75 g of PVDF powder (Mw = 1000000) into 5 mL of DMF and 2.5 mL of DMSO solvent, respectively, and adding 0.0004 mmol of an imidazole iodide ligand. The precursor solution was coated on the surface of a glass substrate to form a transparent thin film with uniform thickness. Then, the thin film was placed in a blast furnace at 65 o C for 15 min, and the DMF / DMSO solvent was evaporated in air and CsPb(I / Br)3 quantum dots were grown in situ to obtain an orange-yellow thin film. The thin film was placed on a heating stage together with the glass substrate, and annealed at a heating temperature of 160 o C for 100 s, and then peeled off from the glass substrate to obtain a red CsPb(Br / I)3 / PVDF composite thin film with a thickness of 8 microns. The composite thin film was selectively exposed to a 200 mW / cm 2 2 ultraviolet lamp with a wavelength of 365 nm for 7 hours to perform a light-induced mixed halogen phase separation reaction, thereby obtaining a regular multi-color perovskite quantum dot pattern. Figure 4 The fluorescence spectrum clearly reveals that red and green emission peaks at 645 nm and 513 nm, respectively, are coexisting and orderly distributed on the single CsPb(Br / I)3 / PVDF composite film of Example 2, confirming the efficient preparation of the multi-color perovskite quantum dot / PVDF composite film.

[0052] Example 3

[0053] CsPb(I / Br)3 precursor solution was prepared by adding 0.03 mmol of CsI, 0.012 mmol of DMAPbI3, 0.018 mmol of DMAPbBr3, and 0.75 g of PVDF powder (Mw = 1000000) into 5 mL of DMF and 2.5 mL of DMSO solvent, respectively, and adding 0.0004 mmol of an imidazole iodide ligand. The precursor solution was coated on the surface of a glass substrate to form a transparent thin film with uniform thickness. Then, the thin film was placed in a blast furnace at 65 o C for 15 min, and the DMF / DMSO solvent was evaporated in air and CsPb(I / Br)3 quantum dots were grown in situ to obtain an orange-yellow thin film. The thin film was placed on a heating stage together with the glass substrate, and annealed at a heating temperature of 160 oCannealed for 60 s and then peeled off from the glass substrate to obtain a red CsPb(Br / I)3 / PVDF composite film with a thickness of 7 microns. The composite film was selectively exposed to a 200 mW / cm2ultraviolet lamp with a wavelength of 365 nm for 4 hours to perform a photo-induced mixed halogen phase separation reaction, thereby obtaining a regular multicolor perovskite quantum dot pattern. 2 The fluorescence spectrum clearly reveals that the coexistence and ordered distribution of red and green emission peaks at 625 nm and 528 nm are achieved on the single CsPb(Br / I)3 / PVDF composite film of Example 3, confirming the efficient preparation of the multicolor perovskite quantum dot / PVDF composite film. Figure 5 The fluorescence spectrum clearly reveals that the coexistence and ordered distribution of red and green emission peaks at 625 nm and 528 nm are achieved on the single CsPb(Br / I)3 / PVDF composite film of Example 3, confirming the efficient preparation of the multicolor perovskite quantum dot / PVDF composite film.

[0054] Example 4

[0055] CsPb(I / Br)3 precursor solution was prepared by adding 0.03 mmol of CsI, 0.012 mmol of DMAPbI3, 0.018 mmol of DMAPbBr3, and 0.75 g of PVDF powder (Mw = 1000000) into 5 mL of DMF and 2.5 mL of DMSO solvents, respectively, and adding 0.001 mmol of an imidazole iodide ligand. The precursor solution was coated on the surface of a glass substrate to form a transparent film with uniform thickness. Then, the film was placed in a blast furnace at 65 o Cfor 15 min, and the DMF / DMSO solvents and in-situ grown CsPb(I / Br)3quantum dots were evaporated in air to obtain an orange-yellow film. The film together with the glass substrate was placed on a heating stage, annealed at a heating temperature of 140 o Cannealed for 60 s and then peeled off from the glass substrate to obtain a red CsPb(Br / I)3 / PVDF composite film with a thickness of 7 microns. The composite film was selectively exposed to a 200 mW / cm2ultraviolet lamp with a wavelength of 365 nm for 4 hours to perform a photo-induced mixed halogen phase separation reaction, thereby obtaining a regular multicolor perovskite quantum dot pattern. 2 The fluorescence spectrum clearly reveals that the coexistence and ordered distribution of red and green emission peaks at 625 nm and 528 nm are achieved on the single CsPb(Br / I)3 / PVDF composite film of Example 3, confirming the efficient preparation of the multicolor perovskite quantum dot / PVDF composite film. Figure 6 The fluorescence spectrum clearly reveals that the coexistence and ordered distribution of red and green emission peaks at 625 nm and 528 nm are achieved on the single CsPb(Br / I)3 / PVDF composite film of Example 3, confirming the efficient preparation of the multicolor perovskite quantum dot / PVDF composite film.

[0056] Example 5

[0057] CsPb(I / Br)3 precursor solution was prepared by adding 0.03 mmol of CsI, 0.012 mmol of DMAPbI3, 0.018 mmol of DMAPbBr3 and 0.75 g of PVDF powder (Mw = 1000000) into 5 mL of DMF and 2.5 mL of DMSO solvent, respectively, and adding 0.002 mmol of an imidazole iodide ligand. The precursor solution was coated on the surface of a glass substrate to form a transparent thin film with uniform thickness. Then, the thin film was placed in a blast furnace at 65 o C for 15 min, and the DMF / DMSO solvent was evaporated in air and CsPb(I / Br)3 quantum dots were grown in situ to obtain an orange-yellow thin film. The thin film was placed on a heating stage together with the glass substrate, and annealed at a heating temperature of 160 o C for 60 s, and then peeled off from the glass substrate to obtain a red CsPb(Br / I)3 / PVDF composite thin film with a thickness of 8 microns. The composite thin film was selectively exposed to a UV lamp with a power density of 200 mW / cm 2 , a wavelength of 365 nm for 48 hours to perform a light-induced mixed halogen phase separation reaction, thereby obtaining a regular multi-color perovskite quantum dot pattern. Figure 7 The fluorescence spectrum clearly reveals the coexistence and ordered distribution of red and green emission peaks at 632 nm and 524 nm, respectively, on the single CsPb(Br / I)3 / PVDF composite film of Example 5, confirming the efficient preparation of the multi-color perovskite quantum dot / PVDF composite film.

[0058] The above describes the embodiments of the present application. However, the present application is not limited to the above-described embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A method for preparing a multi-color perovskite quantum dot patterned thin film, characterized in that, The method comprises the following steps: Step 1: preparation of perovskite precursor solution CsI, DMAPbBr3 and DMAPbI3 perovskite precursor and PVDF powder are dissolved in a mixed solvent composed of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), and an imidazole iodide ligand is added to the mixed solvent to obtain a perovskite precursor solution; Cs The molar ratio of CsI:DMAPbI3:DMAPbBr3 is 0.03:0.012:0.018; The molar ratio of CsI:DMAPbI3:DMAPbBr3 is 0.03:0.012:0.018; The volume ratio of DMF:DMSO is 5:2.5; the ratio of CsI:DMF is 0.03 mmol:5 mL, and the molar ratio of CsI:imidazole iodide ligand is 0.03:0.0002; Step 2: synthesis of CsPb(Br / I)3 / PVDF composite film The perovskite precursor solution prepared in step 1 is uniformly coated on the surface of a glass substrate by a scraping, spin coating or inkjet printing method to form a transparent and uniform thin film; then, in an air environment at 10-80 ℃, the CsPb(Br / I)3 quantum dots are grown in situ by evaporating the solvent and treated for 3-480 minutes to obtain an orange-yellow CsPb(Br / I)3 / PVDF composite film; Step 3: heat annealing treatment The composite film obtained in step 2 is placed on a heating table together with the glass substrate, and precise heat annealing treatment is carried out according to the preset heating temperature and heating time to form a red CsPb(Br / I)3 / PVDF composite film, which is then peeled off from the glass substrate; the thickness of the CsPb(Br / I)3 / PVDF composite film is 2-10 microns; Step 4: multi-color patterning The composite film is selectively exposed by using a photomask technology, and through alignment and exposure control, the composite film is exposed to monochromatic light with a power density of 1-10000 mW cm -3 2, or a continuous visible light source with a wavelength of 365 nm, and the exposure time is adjustable within 1-1000 hours to meet the needs of different pattern resolutions and color depths; through the light-induced mixed halogen phase separation reaction, the structure evolution in the film is triggered, so as to precisely construct a perovskite quantum dot pattern with multiple colors on the composite film. The molecular weight Mw of the PVDF powder is 70000-1000000, and the volume ratio of DMF:DMSO is 1-5:0-3; in the perovskite precursor solution, the molar ratio of CsI to DMAPbI3+DMAPbBr3 is 3-1:1-3; the molar ratio of DMAPbI3 to DMAPbBr3 is 1:0.1-0.1:1; and in the perovskite precursor solution, the concentration of CsI is 0.001-0.2 mmol / mL.

2. The production method according to claim 1, characterized by, The concentration of the imidazole iodide ligand in the perovskite precursor solution is 0.0002-0.002 mmol / mL.

3. The preparation method according to claim 1, characterized in that, In step 3, the preset heating temperature in the heat annealing treatment ranges from 100 ℃ to 200 ℃, and the heating time is selected from 20 s to 100 s.

4. The preparation method according to claim 1, characterized in that, In step 4, in the multi-color patterning process, the mask material is photoresist or a metal mask.

5. The preparation method according to claim 1, characterized in that, The color of the multi-color perovskite quantum dot patterned film can be adjusted from red light to green light.

6. Use of a polychromatic perovskite quantum dot patterned thin film, characterized in that: The multi-color perovskite quantum dot patterned film prepared by the preparation method of claim 1 is applied in Micro-LED, quantum dot light-emitting diode display, solar cell or photodetector.

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