Wafer transfer method, transfer system, vacuum coating equipment and storage medium

Abstract

The application provides a wafer transmission method, a wafer transmission system, a vacuum coating equipment and a computer readable storage medium. The wafer transmission method comprises the following steps: acquiring a first interval between two heating discs in a reaction chamber and a second interval between two fingers of a mechanical hand carrying a wafer; according to a preset standard position, controlling the mechanical hand to enter the reaction chamber from a first height, and performing first position correction of the first heating disc according to the deviation adjustment amount; controlling the mechanical hand to descend to a second height between the top end of the first needle group and the top end of the second needle group, so as to place a first wafer on the top end of the first needle group, and performing second position correction of the second heating disc according to the deviation adjustment amount; and controlling the mechanical hand to descend to a third height below the top end of the second needle group, so as to place a second wafer on the top end of the second needle group.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor device processing, and in particular, to a wafer conveying method, a wafer conveying system, a vacuum coating device, and a computer readable storage medium. BACKGROUND

[0002] The existing vacuum coating device usually uses a U-shaped manipulator to simultaneously clamp and convey two wafers to be processed, so as to improve the process efficiency. However, the U-shaped manipulator cannot adjust the wafer placing and taking positions on both sides of the reaction cavity respectively. When the center distance of the heating plates on both sides of the reaction cavity is deviated from the installation, the two wafers to be processed cannot be accurately placed on the center of the heating plates on both sides, resulting in process deviation. Therefore, the only way is to repeatedly adjust the center distance of the heating plates so that the wafers to be processed fall on the center of the heating plates. This method is not only difficult to operate, but also wastes time, greatly reducing the efficiency of the vacuum coating process.

[0003] In order to overcome the above-mentioned defects of the prior art, the present application provides an improved wafer conveying method, which can overcome the installation deviation of the centers of two heating plates and accurately place two wafers on the process positions of the two heating plates respectively. SUMMARY

[0004] The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

[0005] In order to overcome the above-mentioned defects of the prior art, the present application provides a wafer conveying method, a wafer conveying system, a vacuum coating device, and a computer readable storage medium, which can overcome the installation deviation of the centers of two heating plates and accurately place two wafers on the process positions of the two heating plates respectively by configuring a double-heating-plate structure with an adaptive high-low needle set, and adjusting the positions of the corresponding heating plates at the first height and the second height respectively before placing the wafers on the top ends of the corresponding needle sets.

[0006] Specifically, the wafer transfer method according to the first aspect of the present application comprises the following steps: obtaining a first distance between two heating plates in a reaction chamber and a second distance between two fingers of a robot carrying wafers. The first heating plate in the reaction chamber is configured with a first group of longer pins, and the second heating plate is configured with a second group of shorter pins; determining a deviation adjustment amount according to the difference between the first distance and the second distance; according to a preset standard position, controlling the robot to enter the reaction chamber from a first height higher than the top end of the first group of pins, and performing first position correction of the first heating plate according to the deviation adjustment amount; controlling the robot to descend to a second height between the top end of the first group of pins and the top end of the second group of pins to place a first wafer carried by a first finger on the top end of the first group of pins, and performing second position correction of the second heating plate according to the deviation adjustment amount; and controlling the robot to descend to a third height lower than the top end of the second group of pins to place a second wafer carried by a second finger on the top end of the second group of pins.

[0007] Further, in some embodiments of the present application, after placing the second wafer in the process position of the second heating plate, the wafer transfer method further comprises the following steps: controlling the robot to exit the reaction chamber from the third height.

[0008] Further, in some embodiments of the present application, the first heating plate and the second heating plate have a lifting function, and the wafer transfer method further comprises the following steps: before the robot enters the reaction chamber, controlling the first heating plate and the second heating plate to descend to a wafer transfer position lower than the third height to expose the first group of pins and the second group of pins; and / or after the robot exits the reaction chamber, controlling the first heating plate and the second heating plate to rise to a process position higher than the top end of the first group of pins to obtain the second wafer from the top end of the second group of pins and / or the first wafer from the top end of the first group of pins, and then performing a vacuum coating process on the obtained first wafer and / or the second wafer, and / or after completing the vacuum coating process, controlling the first heating plate and the second heating plate to descend to the wafer transfer position to place the first wafer on the top end of the first group of pins and / or the second wafer on the top end of the second group of pins.

[0009] Further, in some embodiments of the present application, the step of determining the deviation adjustment amount according to the difference between the first distance and the second distance comprises determining the deviation adjustment amount as half of the difference between the first distance and the second distance. The step of performing the first position correction for aligning the first heating plate according to the deviation adjustment amount comprises controlling the robot to translate in the direction of the first heating plate by the deviation adjustment amount so as to align the first wafer with the first heating plate. The step of performing the second position correction for aligning the second heating plate according to the deviation adjustment amount comprises controlling the robot to translate in the direction of the second heating plate by twice the deviation adjustment amount so as to align the second wafer with the second heating plate.

[0010] Further, in some embodiments of the present application, the step of performing the first position correction for aligning the first heating plate according to the deviation adjustment amount further comprises obtaining first AWC data indicative of the position deviation of the first wafer caused by lowering the first wafer from the first height to the top end of the first set of pins, and determining the control instruction of the first position correction according to the first AWC data. The step of performing the second position correction for aligning the second heating plate according to the deviation adjustment amount further comprises obtaining second AWC data indicative of the position deviation of the second wafer caused by lowering the second wafer from the second height to the top end of the second set of pins, and determining the control instruction of the second position correction according to the second AWC data.

[0011] Further, in some embodiments of the present application, after the first heating plate and the second heating plate are lowered to the wafer transfer position, the wafer transfer method further comprises the following steps: controlling the robot to enter the reaction chamber from the third height according to the standard position so as to reach below the first set of pins and the second set of pins, and performing a third position correction for aligning the second heating plate according to the deviation adjustment amount; controlling the robot to rise to the second height so as to obtain the second wafer from the top end of the second set of pins, and performing a fourth position correction for aligning the first heating plate according to the deviation adjustment amount; and controlling the robot to rise to the first height so as to obtain the first wafer from the top end of the first set of pins, and carrying the obtained first wafer and / or the second wafer out of the reaction chamber from the first height.

[0012] Further, in some embodiments of the present application, the step of performing the third position correction for aligning the second heating plate according to the deviation adjustment amount comprises determining the control instruction of the third position correction according to the deviation adjustment amount and / or the second AWC data, and determining the control instruction of the fourth position correction according to twice the deviation adjustment amount and / or the first AWC data.

[0013] Further, in some embodiments of the present application, before controlling the robot arm to enter the reaction chamber from a first height higher than the top end of the first group of pins, and after controlling the robot arm to carry the obtained first wafer and / or second wafer to exit the reaction chamber from the first height, the wafer transfer method further comprises the following steps: obtaining a first wafer and / or a second wafer to be vacuum coated from a front end module; and placing the first wafer and / or the second wafer after the vacuum coating back to the front end module. The front end module comprises an atmospheric transmission mechanism and an atmospheric-vacuum conversion load chamber, the atmospheric transmission mechanism is used to realize the transmission of the first wafer and / or the second wafer between a front open unified pod (FOUP) at the front end and the atmospheric-vacuum conversion load chamber at the back end, and the atmospheric-vacuum conversion load chamber is used to realize the pressure conversion between the vacuum environment in the reaction chamber and the atmospheric environment in the atmospheric transmission mechanism.

[0014] Further, in some embodiments of the present application, the standard position involves a first motion parameter indicating the front-rear stretching motion state of the robot arm and a second motion parameter indicating the left-right rotation motion of the robot arm.

[0015] In addition, the wafer transfer system provided by the second aspect of the present application comprises a robot arm, a memory and a processor. The robot arm comprises two fingers for carrying a wafer. The memory has computer instructions stored thereon. The processor is connected to the robot arm and the memory, and is configured to execute the computer instructions stored on the memory to implement the wafer transfer method provided by the first aspect of the present application.

[0016] In addition, the vacuum coating apparatus provided by the third aspect of the present application comprises a wafer transfer system provided by the second aspect of the present application and a reaction chamber. The reaction chamber comprises two heating discs. The first heating disc is configured with a first group of pins which is longer. The second heating disc is configured with a second group of pins which is shorter. The reaction chamber is used to perform a vacuum coating process on the first wafer and / or the second wafer transferred by the wafer transfer system.

[0017] In addition, the computer readable storage medium provided by the fourth aspect of the present application has computer instructions stored thereon. When the computer instructions are executed by a processor, the wafer transfer method provided by the first aspect of the present application is implemented. BRIEF DESCRIPTION OF DRAWINGS

[0018] The above features and advantages of the present application can be better understood by reading the detailed description of embodiments of the present application in conjunction with the following drawings, in which: in the drawings, the components are not necessarily drawn to scale, and components having similar related properties or features can have the same or similar reference numerals.

[0019] Figure 1 A structural diagram of a vacuum coating apparatus according to some embodiments of the present application is shown.

[0020] Figure 2A A top view diagram of a reaction chamber according to some embodiments of the present application is shown.

[0021] Figure 2B A front view diagram of a reaction chamber according to some embodiments of the present application is shown.

[0022] Figure 3 A flow diagram of a wafer transfer method according to some embodiments of the present application is shown.

[0023] Figures 4A-4D A diagram of a wafer releasing flow according to some embodiments of the present application is shown.

[0024] Figures 5A-5D A diagram of a wafer picking flow according to some embodiments of the present application is shown.

[0025] Reference signs:

[0026] 10 wafer transfer system

[0027] 101 robot

[0028] 11 reaction chamber

[0029] 111 first heating disc

[0030] 112 second heating disc

[0031] 113 first needle set

[0032] 114 second needle set

[0033] 12 front end module

[0034] 121 atmosphere transmission mechanism

[0035] 122 atmosphere-vacuum conversion load chamber

[0036] 13 front opening unified pods DETAILED DESCRIPTION

[0037] The advantages and features of the present application will become apparent to those skilled in the art who can gain an understanding of the application by reading the description of the embodiment and studying the accompanying drawings. The application is described, by way of non-limiting example with reference to the embodiment illustrated in the drawings attached hereto. The application is not limited in scope by the illustrative embodiment which is presented but extends or encompasses whatever falls within the scope of the appended claims. Any such changes or modifications are intended to be included within the scope of the present application. The above description is intended to be illustrative and not restrictive. Many embodiments of the application will be apparent to those of skill in the art upon reviewing the above description. The scope of the application should, therefore, be determined not with reference to the above description, but should instead be determined with reference to the appended claims, along with their full scope of equivalents.

[0038] In the description of the present application, it is necessary to point out that, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "linking" should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or the internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0039] In addition, "up", "down", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the section and the related drawings. The relative terms are only for the convenience of description, and they do not mean that the device described should be manufactured or operated in a particular orientation, so they should not be understood as a limitation on the present application.

[0040] It can be understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below can be referred to as the second component, region, layer and / or part without departing from some embodiments of the present application.

[0041] As described above, the U-shaped mechanical hand cannot adjust the positions of the film placing and taking on both sides of the reaction cavity respectively. When the center distance of the heating disc on both sides of the reaction cavity is deviated, the two wafers to be processed cannot be accurately placed on the center of the heating disc on both sides, resulting in process deviation. Therefore, only by repeatedly adjusting the center distance of the heating disc, the wafer to be processed can be placed on the center of the heating disc. This method not only is not easy to operate, but also wastes time, greatly reducing the efficiency of the vacuum coating process.

[0042] In order to overcome the above-mentioned defects in the prior art, the present application provides a wafer conveying method, a wafer conveying system, a vacuum coating device and a computer readable storage medium. By configuring a double heating disc structure suitable for high and low needle groups, and after position correction of the corresponding heating disc at the first height and the second height, the wafer is placed on the top end of the corresponding needle group, the installation deviation of the centers of the two heating discs can be overcome, and the two wafers can be accurately dropped into the process positions of the two heating discs respectively.

[0043] In some non-limiting embodiments, the above-mentioned wafer conveying method provided by the first aspect of the present application can be implemented based on the above-mentioned wafer conveying system provided by the second aspect of the present application. Further, the above-mentioned wafer conveying system provided by the second aspect of the present application can be implemented in the above-mentioned vacuum coating device provided by the third aspect of the present application. For details, please refer to Figure 1 , Figure 1 A structural schematic diagram of the above-mentioned vacuum coating device provided by some embodiments of the present application is shown.

[0044] In Figure 1 the embodiments shown, the above-mentioned vacuum coating device provided by the third aspect of the present application comprises the wafer conveying system 10 and the reaction chamber 11 provided by the second aspect of the present application.

[0045] For further details, please refer to Figure 2A and Figure 2B , Figure 2A A top view schematic diagram of the reaction chamber provided by some embodiments of the present application is shown. Figure 2B A front view schematic diagram of the reaction chamber provided by some embodiments of the present application is shown.

[0046] In Figure 2A and Figure 2B the embodiments shown, the reaction chamber 11 comprises two heating discs. Here, the first heating disc 111 is configured with a longer first needle group 113, and the second heating disc 112 is configured with a shorter second needle group 114, for performing a vacuum coating process on the first wafer and / or the second wafer conveyed by the wafer conveying system 10.

[0047] In addition, for further details, please refer to Figure 1 , in Figure 1In the embodiment shown, the third aspect of the present application provides the above-mentioned vacuum coating device further comprising a front end module 12. The front end module 12 comprises an atmospheric transmission mechanism 121 and an atmospheric-vacuum conversion load chamber 122. The atmospheric transmission mechanism 121 is configured to realize the transmission of the first wafer and / or the second wafer between a front end Front Opening Unified Pod (FOUP) 13 and the atmospheric-vacuum conversion load chamber 122 at the back end. The atmospheric-vacuum conversion load chamber 122 is configured to realize the pressure conversion between the vacuum environment in the reaction chamber 11 and the atmospheric environment in the atmospheric transmission mechanism 121.

[0048] Further, the second aspect of the present application provides the above-mentioned wafer transmission system 10 comprising a robot 101, a memory and a processor. The robot 101 comprises two fingers configured to carry wafers. The memory comprises, but is not limited to, the above-mentioned computer readable storage medium of the third aspect of the present application, on which computer instructions are stored. The processor is connected to the robot 101 and the memory, and is configured to execute the computer instructions stored on the memory to implement the wafer transmission method of the first aspect of the present application.

[0049] The working principle of the above-mentioned wafer transmission system will be described below in combination with some embodiments of wafer transmission methods. Those skilled in the art can understand that these embodiments of wafer transmission methods are only some non-limiting embodiments provided by the present application, which are intended to clearly demonstrate the main idea of the present application and provide some specific schemes for facilitating the public to implement, but not to limit the overall function or overall working mode of the wafer transmission system. Similarly, the wafer transmission system is also only a non-limiting embodiment provided by the present application, which does not limit the execution subject and execution order of each step in these wafer transmission methods.

[0050] For specific reference, please refer to Figure 3 , Figures 4A-4D . Figure 3 Fig. 1 shows a flowchart of a wafer transmission method according to some embodiments of the present application, Figures 4A-4D Fig. 2 shows a schematic diagram of a wafer loading process according to some embodiments of the present application.

[0051] As Figure 3 shown, the processor can first acquire a first interval between the two heating discs in the reaction chamber 11 and a second interval between the two fingers of the robot 101 carrying the wafer, and then determine the deviation adjustment amount as half of the difference between the first interval and the second interval according to the difference between the first interval and the second interval.

[0052] Subsequently, the wafer transfer system can first acquire the first wafer and the second wafer to be vacuum coated from the front-end module 13 via the robot arm 101. Before the robot arm 12 enters the reaction chamber 11, the processor can control the first heating plate 111 and the second heating plate 112 to descend to a transfer position below the third height, so as to expose the first ejector pin group 113 and the second ejector pin group 114.

[0053] After that, such as Figure 4A As shown, the processor can control the robot arm 101 to enter the reaction chamber 11 from a first height above the top of the first ejector pin group 113 according to a preset standard position (R, T, BTO), and perform first position correction for alignment with the first heating plate 111 according to the deviation adjustment amount. Here, BTO indicates the maximum height of the robot arm 101. The processor can first control the robot arm 101 to translate the deviation adjustment amount in the direction of the first heating plate 111 so that the first wafer is aligned with the first heating plate 111. Here, the standard position (R, T, BTO) involves a first motion parameter R indicating the forward and backward extension motion state of the robot arm 101 and a second motion parameter T indicating the left and right rotational motion of the robot arm 101.

[0054] After that, such as Figure 4B As shown, the processor can control the robotic arm 101 to descend to a second height between the top of the first ejector pin group 113 and the top of the second ejector pin group 114, to place the first wafer carried by the first finger onto the top of the first ejector pin group 113, and perform second position correction for alignment with the second heating plate 112 based on the deviation adjustment amount. Here, the processor can control the robotic arm 101 to translate in the direction relative to the second heating plate 112 by twice the deviation adjustment amount, so that the second wafer is aligned with the second heating plate 112. Afterwards, the processor can also acquire first AWC (Active Wafer Centering) data indicating the positional deviation generated when the first wafer descends from the first height to the top of the first ejector pin group 113. Subsequently, the processor can determine a first position correction control command based on this first AWC data to further correct the first position of the first heating plate 111.

[0055] After that, such as Figure 4C As shown, the processor can control the robotic arm 101 to descend to a third height below the top of the second ejector pin group 114 to place the second wafer carried by the second finger onto the top of the second ejector pin group 114. Here, the processor can acquire second AWC data indicating the positional deviation of the second wafer as it descends from the second height to the top of the second ejector pin group 114. Subsequently, the processor can determine a second position correction control command based on this second AWC data to further correct the second position of the second heating plate 112. After placing the second wafer onto the process position of the second heating plate 112, the processor can control the robotic arm 101 to exit the reaction chamber 11 from the third height.

[0056] After that, such as Figure 4D As shown, after the robotic arm 101 exits the reaction chamber 11, the processor can control the first heating plate 111 and the second heating plate 112 to rise to a process position higher than the top of the first ejector pin group 113, so as to obtain the second wafer from the top of the second ejector pin group 114 and the first wafer from the top of the first ejector pin group 113, and then perform a vacuum coating process on the obtained first wafer and second wafer.

[0057] Those skilled in the art will understand that Figures 4A-4D The embodiments shown of simultaneous placement of the first and second wafers are merely some non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are easy for the public to implement, rather than being used to limit the scope of protection of the present invention.

[0058] Alternatively, in other embodiments, the vacuum coating apparatus may control only the robotic arm 101 and the first heating plate 111 to place the first wafer onto the top of the first ejector pin group 113.

[0059] Specifically, the wafer transfer system can first obtain the first wafer to be vacuum coated from the front-end module 13 via the robot arm 101. Before the robot arm 12 enters the reaction chamber 11, the processor can control the first heating plate 111 to descend to a transfer position below the third height to expose the first ejector pin assembly 113.

[0060] Subsequently, the processor can control the robot arm 101 to enter the reaction chamber 11 from a first height above the top of the first ejector pin group 113 according to the preset standard position (R, T, BTO), and perform first position correction for alignment with the first heating plate 111 according to the deviation adjustment amount. Here, the processor can first control the robot arm 101 to translate the deviation adjustment amount in the direction of the first heating plate 111 so that the first wafer is aligned with the first heating plate 111. Here, the standard position (R, T, BTO) involves a first motion parameter R indicating the forward and backward extension motion state of the robot arm 101 and a second motion parameter T indicating the left and right rotational motion of the robot arm 101.

[0061] Next, the processor can control the robotic arm 101 to descend to a second height between the top of the first ejector pin group 113 and the top of the second ejector pin group 114, so as to place the first wafer carried by the first finger onto the top of the first ejector pin group 113. Here, the processor can also acquire first AWC data indicating the positional deviation of the first wafer as it descends from the first height to the top of the first ejector pin group 113. Then, based on this first AWC data, the processor can determine a first position correction control command to further correct the first position of the first heating plate 111.

[0062] Optionally, in some other embodiments, the vacuum coating apparatus can only control the robot 101 and the second heating plate 112 to place the second wafer onto the top ends of the second set of pins 114.

[0063] Specifically, the wafer transfer system can first acquire the second wafer to be vacuum coated from the front end module 13 via the robot 101. Before the robot 12 enters the reaction chamber 11, the processor can control the second heating plate 112 to descend to a wafer transfer position below the third height to expose the second set of pins 114.

[0064] Afterwards, the processor can control the robot 101 to enter the reaction chamber 11 from the first height above the top ends of the first set of pins 113 according to the preset standard position (R, T, BTO). Here, the standard position (R, T, BTO) involves a first motion parameter R indicating the forward and backward stretching motion state of the robot 101 and a second motion parameter T indicating the left and right rotation motion of the robot 101.

[0065] Afterwards, the processor can control the robot 101 to descend to the second height between the top ends of the first set of pins 113 and the second set of pins 114 and to adjust the second position of the second heating plate 112 according to the deviation adjustment amount. Here, the processor can control the robot 101 to translate twice the deviation adjustment amount in the direction of the second heating plate 112 to align the second wafer with the second heating plate 112.

[0066] Afterwards, the processor can control the robot 101 to descend to the third height below the top ends of the second set of pins 114 to place the second wafer carried by the second finger onto the top ends of the second set of pins 114. Here, the processor can acquire second AWC data indicating the positional deviation caused by the descent of the second wafer from the second height to the top ends of the second set of pins 114. Afterwards, the processor can determine the control instruction for the second position adjustment of the second heating plate 112 according to the second AWC data to further adjust the second position of the second heating plate 112.

[0067] Further reference is made to Figures 5A-5D , Figures 5A-5D A schematic diagram of a wafer picking process according to some embodiments of the present application is shown.

[0068] As Figures 5A-5D After the completion of the vacuum coating process, the processor can also control the robot 101, the first heating plate 111 and the second heating plate 112 to perform the reverse process of the above steps to pick the first wafer and the second wafer from the reaction chamber 11.

[0069] Specifically, as Figure 5A and 5BAs shown, after the vacuum coating process is completed, the processor can control the first heating plate 111 and the second heating plate 112 to descend to the wafer transfer position, so as to place the first wafer on the top of the first ejector pin group 113 and place the second wafer on the top of the second ejector pin group 114.

[0070] After that, as Figure 5B As shown, the processor can control the robotic arm 101 to enter the reaction chamber 11 from a third height according to the standard position, so as to reach below the first ejector pin group 113 and the second ejector pin group 114, and then perform third position correction for alignment with the second heating plate 112 according to the deviation adjustment amount. Here, the processor can determine the control command for third position correction based on the deviation adjustment amount and / or the second AWC data.

[0071] After that, such as Figure 5C As shown, the processor can control the robotic arm 101 to rise to a second height to retrieve the second wafer from the top of the second ejector pin group 114, and then perform fourth position alignment correction with the first heating plate 111 based on the deviation adjustment amount. Here, the processor can determine the control command for the fourth position alignment correction based on twice the deviation adjustment amount and / or the first AWC data.

[0072] Finally, as Figure 5D As shown, the processor can control the robotic arm 101 to rise to a first height to obtain the first wafer from the top of the first pin group 113, and then carry the obtained first wafer and second wafer out of the reaction chamber 11 from the first height, and place the first wafer and second wafer that have completed vacuum coating back into the front-end module 13.

[0073] Those skilled in the art will understand that Figures 5A-5D The embodiments shown for simultaneously picking up the first and second wafers are merely some non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concept of the invention and provide some specific solutions that are easy for the public to implement, rather than being used to limit the scope of protection of the present invention.

[0074] Alternatively, in other embodiments, the vacuum coating apparatus may control only the robotic arm 101 and the first heating plate 111 to remove the first wafer from the top of the first ejector pin group 113 from the reaction chamber 11.

[0075] Specifically, after completing the vacuum coating process, the processor can control the first heating disc 111 to descend to the wafer transfer position to place the first wafer on the top end of the first pin group 113. Then, the processor can control the robot 101 to enter the reaction chamber 11 from the third height to reach below the first pin group 113 according to the standard position, and then adjust the fourth position deviation of the first heating disc 111 according to the deviation adjustment amount. Here, the processor can determine the control instruction of the fourth position deviation according to the double deviation adjustment amount and / or the first AWC data. Finally, the processor can control the robot 101 to rise to the first height to take the first wafer from the top end of the first pin group 113, carry the taken first wafer out of the reaction chamber 11 from the first height, and place the first wafer after completing the vacuum coating back to the front end module 13.

[0076] Alternatively, in other embodiments, the vacuum coating device can only control the robot 101 and the second heating disc 112 to take the second wafer out of the reaction chamber 11 from the top end of the second pin group 114.

[0077] Specifically, after completing the vacuum coating process, the processor can control the second heating disc 112 to descend to the wafer transfer position to place the second wafer on the top end of the second pin group 114. Then, the processor can control the robot 101 to enter the reaction chamber 11 from the third height to reach below the second pin group 114 according to the standard position, and then adjust the third position deviation of the second heating disc 112 according to the deviation adjustment amount. Here, the processor can determine the control instruction of the third position deviation according to the deviation adjustment amount and / or the second AWC data. Then, the processor can control the robot 101 to rise to the second height to take the second wafer from the top end of the second pin group 114. Finally, the processor can control the robot 101 to rise to the first height to carry the taken second wafer out of the reaction chamber 11 from the first height, and place the second wafer after completing the vacuum coating back to the front end module 13.

[0078] In summary, the wafer transfer method, wafer transfer system, vacuum coating device and computer readable storage medium provided by the present application can overcome the installation deviation of the centers of the two heating discs by configuring a double heating disc structure adapted to the high and low pin groups, and then placing the wafers on the top ends of the corresponding pin groups after adjusting the position deviations of the corresponding heating discs at the first height and the second height, respectively, so that the two wafers can be accurately dropped to the process positions of the two heating discs, respectively.

[0079] While the above-described methods are illustrated and described as a series of acts for simplicity, it is to be understood that the methods are not limited by the order of acts, as some acts can occur in different orders and / or concurrently with other acts from that depicted and described herein. For example, those skilled in the art will understand and appreciate that a methodology could alternatively be represented as a series of interrelated states or events, such as in a concatenation or timeline, instead of as a list of acts.

[0080] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A wafer transfer method, comprising: The method comprises the following steps: acquiring a first distance between two heating plates in a reaction chamber and a second distance between two fingers of a robot carrying a wafer, wherein the first heating plate in the reaction chamber is configured with a first group of longer pins, and the second heating plate is configured with a second group of shorter pins; determining a deviation adjustment amount as half of a difference between the first distance and the second distance; controlling the robot to enter the reaction chamber from a first height above the top end of the first group of pins according to a preset standard position, and controlling the robot to translate the deviation adjustment amount towards the first heating plate so that a first wafer carried by the first finger is aligned with the first heating plate; controlling the robot to descend to a second height between the top end of the first group of pins and the top end of the second group of pins to place the first wafer carried by the first finger on the top end of the first group of pins, and controlling the robot to translate twice the deviation adjustment amount towards the second heating plate so that a second wafer carried by the second finger is aligned with the second heating plate; and controlling the robot to descend to a third height below the top end of the second group of pins to place the second wafer carried by the second finger on the top end of the second group of pins.

2. The wafer transfer method of claim 1, wherein, After placing the second wafer in the process position of the second heating plate, the wafer transfer method further comprises the following steps: controlling the robot to exit the reaction chamber from the third height.

3. The wafer transfer method of claim 2, wherein, The first heating plate and the second heating plate have a lifting function, and the wafer transfer method further comprises the following steps: before the robot enters the reaction chamber, controlling the first heating plate and the second heating plate to descend to a wafer transfer position below the third height to expose the first group of pins and the second group of pins; and / or after the robot exits the reaction chamber, controlling the first heating plate and the second heating plate to rise to a process position above the top end of the first group of pins to obtain the second wafer from the top end of the second group of pins and / or the first wafer from the top end of the first group of pins, and performing a vacuum coating process on the obtained first wafer and / or the second wafer, and / or after completing the vacuum coating process, controlling the first heating plate and the second heating plate to descend to the wafer transfer position to place the first wafer on the top end of the first group of pins and / or the second wafer on the top end of the second group of pins.

4. The wafer transfer method of claim 3, wherein, The step of correcting the first position deviation of the first heating plate according to the deviation adjustment amount further comprises: acquiring first AWC data indicating a position deviation generated by the first wafer descending from the first height to the top end of the first group of pins; and determining a control instruction of the first position deviation according to the first AWC data, The step of adjusting the second position deviation of the second heating plate according to the deviation adjustment amount further comprises: obtaining second AWC data indicating a position deviation generated by the second wafer falling from the second height to the top end of the second pin group; and determining a control instruction of the second position deviation according to the second AWC data.

5. The wafer transfer method of claim 3, wherein, After the first heating plate and the second heating plate fall to the wafer transfer position, the wafer transfer method further comprises the following steps: According to the standard position, controlling the robot to enter the reaction chamber from the third height to reach below the first pin group and the second pin group, and then adjusting a third position deviation of the second heating plate according to the deviation adjustment amount; Controlling the robot to rise to the second height to obtain the second wafer from the top end of the second pin group, and then adjusting a fourth position deviation of the first heating plate according to the deviation adjustment amount; and Controlling the robot to rise to the first height to obtain the first wafer from the top end of the first pin group, and then carrying the obtained first wafer and / or the second wafer to exit the reaction chamber from the first height.

6. The wafer transfer method of claim 5, wherein, The step of adjusting the third position deviation of the second heating plate according to the deviation adjustment amount comprises: According to the deviation adjustment amount and / or second AWC data, determining a control instruction of the third position deviation; and According to twice the deviation adjustment amount and / or first AWC data, determining a control instruction of the fourth position deviation.

7. The wafer transfer method of claim 1, wherein, Before controlling the robot to enter the reaction chamber from the first height above the top end of the first pin group, and after controlling the robot to carry the obtained first wafer and / or the second wafer to exit the reaction chamber from the first height, the wafer transfer method further comprises the following steps: Obtaining a first wafer and / or a second wafer to be vacuum coated from a front-end module; and Placing the first wafer and / or the second wafer after the vacuum coating back to the front-end module, wherein the front-end module comprises an atmospheric transmission mechanism and an atmospheric-vacuum conversion load chamber, the atmospheric transmission mechanism is used to realize the transmission of the first wafer and / or the second wafer between a front-end front opening wafer transfer box and a rear-end atmospheric-vacuum conversion load chamber, and the atmospheric-vacuum conversion load chamber is used to realize the pressure conversion between the vacuum environment in the reaction chamber and the atmospheric environment in the atmospheric transmission mechanism.

8. The wafer transport method of claim 1, wherein, The standard position involves a first motion parameter indicating the front-rear extension motion state of the robot and a second motion parameter indicating the left-right rotation motion of the robot.

9. A wafer transport system, characterized by, Comprise: a robot comprising two fingers for carrying wafers; a memory having computer instructions stored thereon; and a processor connected to the robot and the memory and configured to execute the computer instructions stored on the memory to implement the wafer transfer method according to any one of claims 1-8.

10. A vacuum coating apparatus, characterized by Comprise: the wafer transfer system according to claim 9; and The reaction chamber comprises two heating discs, wherein the first heating disc is configured with a first group of longer pins, and the second heating disc is configured with a second group of shorter pins, for performing a vacuum coating process on the first wafer and / or the second wafer transmitted by the wafer transmission system.

11. A computer readable storage medium having stored thereon computer instructions, wherein, The computer instructions, when executed by a processor, implement the wafer transmission method according to any one of claims 1-8.

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