AC and DC electric field measurement device and method based on microelectronic devices

Abstract

The present application relates to an AC and DC electric field measurement device and method based on microelectronic devices. The device includes a sensing unit, a bridge circuit, a modulation signal source and a signal processing circuit connected in sequence; one end of the bridge circuit is connected to the sensing unit, and the other end is connected to the modulation signal source; the sensing unit is used to sense the change in the electric field strength of the AC and DC electric field to be measured, and output the sensing signal; the modulation signal source is used to provide an AC signal source for the bridge circuit when the sensing signal is a DC signal, so as to modulate the DC signal that is difficult to collect by the bridge circuit into an AC signal; the bridge circuit is used to amplify the sensing signal to obtain a modulation signal; the signal processing circuit is used to process the modulation signal to obtain a target signal, wherein the target signal corresponds to the electric field strength of the AC and DC electric field to be measured. The present device can improve the measurement accuracy of the DC electric field.

Description

Technical Field

[0001] The present application relates to the technical field of electric field intelligent sensing, and in particular to an AC and DC electric field measurement device and method based on microelectronic devices. Background Art

[0002] In recent years, with the increasing depletion of fossil fuels, the transition to clean and low-carbon energy is urgently required. The access of large-scale distributed clean energy and nonlinear power electronic devices in new power systems has led to a significant increase in the range and frequency band of the system's electrical measurement signals, and there is an urgent need for real-time measurement feedback and dynamic adjustment of the power grid state. Electric field information is one of the basic physical quantities of the power system. It contains a large amount of information on the operating status of power grid equipment. Through edge computing, deep learning, artificial intelligence and other methods, it can quickly realize intelligent perception of equipment status and intelligent self-healing of faults. Therefore, as the nerve endings of the digital power grid, intelligent electric field sensors are the basic support for realizing intelligent perception of the status of each link of the source, grid, load and storage, deep information fusion and resource optimization allocation. It is urgent to develop new electric field sensors suitable for wide-area distributed broadband monitoring of new power systems.

[0003] In response to the development needs of digitalization of new power systems, sensors need to take into account many performance requirements such as miniaturization, wide bandwidth, wide range, strong stability, and easy integration. The electric field is mainly measured using electro-optical electric field sensors and mechanical electric field sensors. Among them, electro-optical electric field sensors modulate electric field signals into optical signals for perception based on the electro-optical effect; mechanical electric field sensors mainly include field grinding sensors and micro-electromechanical system (MEMS) sensors.

[0004] However, since the electro-optical electric field sensor is affected by the charge accumulation in the electro-optical crystal material under the action of DC or extremely low frequency electric field and produces an electric field in the opposite direction to the external direction, it is impossible to accurately measure the DC electric field; the mechanical electric field sensor has low measurement accuracy for the DC electric field due to mechanical fatigue. Summary of the invention

[0005] Based on this, it is necessary to provide an AC and DC electric field measurement device and method based on microelectronic devices that can improve the DC electric field measurement accuracy in order to address the above technical problems.

[0006] In a first aspect, the present application provides an AC and DC electric field measuring device based on a microelectronic device, comprising:

[0007] A sensing unit, a bridge circuit, a modulation signal source and a signal processing circuit connected in sequence; one end of the bridge circuit is connected to the sensing unit, and the other end is connected to the modulation signal source;

[0008] The sensing unit is used to sense the change in the electric field strength of the AC and DC electric fields to be measured and output a sensing signal;

[0009] The modulation signal source is used to provide an AC signal source for the bridge circuit when the induction signal is a DC signal, so as to modulate the DC signal that is difficult to be collected by the bridge circuit into an AC signal;

[0010] The bridge circuit is used to amplify the sensing signal to obtain a modulated signal;

[0011] The signal processing circuit is used to process the modulated signal to obtain a target signal, wherein there is a corresponding relationship between the target signal and the electric field strength of the AC and DC electric fields to be measured.

[0012] In one embodiment, the bridge circuit comprises four microelectronic devices connected in series and in parallel in reverse order.

[0013] In one embodiment, the microelectronic device is a field effect transistor, and the bridge circuit includes a first bridge arm and a second bridge arm;

[0014] The first bridge arm includes a first field effect tube and a second field effect tube; the source and drain of the first field effect tube are short-circuited, the source and drain of the second field effect tube are short-circuited, and the short-circuited end is connected to the signal processing circuit; the gate of the first field effect tube is connected to the sensing unit; the gate of the second field effect tube is connected to the modulation signal source;

[0015] The second bridge arm includes a third field effect transistor and a fourth field effect transistor; the gate of the third field effect transistor and the gate of the fourth field effect transistor are short-circuited, and the short-circuited end is connected to the signal processing circuit; the source and drain of the third field effect transistor are short-circuited and connected to the sensing unit; the source and drain of the fourth field effect transistor are short-circuited and connected to the modulation signal source.

[0016] In one of the embodiments, the device further includes a DC blocking capacitor; the DC blocking capacitor is arranged between the bridge circuit and the signal processing circuit.

[0017] In one embodiment, the device further comprises a resistor; the resistor is connected to the DC blocking capacitor.

[0018] In one of the embodiments, the device further includes an adjusting capacitor; the adjusting capacitor is connected in parallel with the resistor.

[0019] In one embodiment, the signal processing circuit comprises an amplifier circuit and a microcontroller, one end of the amplifier circuit is connected to the microcontroller, and the other end is connected to the bridge circuit;

[0020] The amplifier circuit is used to amplify the modulated signal, and the microcontroller is used to process the modulated signal to obtain the target signal.

[0021] In a second aspect, the present application also provides an AC and DC electric field measurement method based on a microelectronic device, comprising:

[0022] Inducing the change of the electric field strength of the AC and DC electric fields to be measured and outputting the induced signals;

[0023] When the induced signal is a DC signal, an AC signal source is provided for the bridge circuit to modulate the DC signal which is difficult to be collected by the bridge circuit into an AC signal;

[0024] amplifying the sensing signal to obtain a modulated signal;

[0025] The modulated signal is processed to obtain a target signal, wherein the target signal corresponds to the electric field strength of the AC and DC electric fields to be measured.

[0026] In a third aspect, the present application also provides an AC and DC electric field measuring device based on a microelectronic device, comprising:

[0027] The sensing module is used to sense the change of the electric field strength of the AC and DC electric fields to be measured and output a sensing signal;

[0028] A modulation module, used for providing an AC signal source for the bridge circuit when the induction signal is a DC signal, so as to modulate the DC signal which is difficult to be collected by the bridge circuit into an AC signal;

[0029] an amplification module, used to amplify the sensing signal to obtain a modulated signal;

[0030] A processing module is used to process the modulated signal to obtain a target signal, wherein there is a corresponding relationship between the target signal and the electric field strength of the AC and DC electric fields to be measured.

[0031] In a fourth aspect, the present application further provides a computer device, comprising a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the following steps are implemented:

[0032] Inducing the change of the electric field strength of the AC and DC electric fields to be measured and outputting the induced signals;

[0033] When the induced signal is a DC signal, an AC signal source is provided for the bridge circuit to modulate the DC signal which is difficult to be collected by the bridge circuit into an AC signal;

[0034] amplifying the sensing signal to obtain a modulated signal;

[0035] The modulated signal is processed to obtain a target signal, wherein the target signal corresponds to the electric field strength of the AC and DC electric fields to be measured.

[0036] In a fifth aspect, the present application further provides a computer-readable storage medium having a computer program stored thereon, wherein when the computer program is executed by a processor, the following steps are implemented:

[0037] Inducing the change of the electric field strength of the AC and DC electric fields to be measured and outputting the induced signals;

[0038] When the induced signal is a DC signal, an AC signal source is provided for the bridge circuit to modulate the DC signal which is difficult to be collected by the bridge circuit into an AC signal;

[0039] amplifying the sensing signal to obtain a modulated signal;

[0040] The modulated signal is processed to obtain a target signal, wherein the target signal corresponds to the electric field strength of the AC and DC electric fields to be measured.

[0041] In a sixth aspect, the present application further provides a computer program product, including a computer program, which implements the following steps when executed by a processor:

[0042] Inducing the change of the electric field strength of the AC and DC electric fields to be measured and outputting the induced signals;

[0043] When the induced signal is a DC signal, an AC signal source is provided for the bridge circuit to modulate the DC signal which is difficult to be collected by the bridge circuit into an AC signal;

[0044] amplifying the sensing signal to obtain a modulated signal;

[0045] The modulated signal is processed to obtain a target signal, wherein the target signal corresponds to the electric field strength of the AC and DC electric fields to be measured.

[0046] The above-mentioned AC and DC electric field measurement device and method based on microelectronic devices include a sensing unit, a bridge circuit, a modulation signal source and a signal processing circuit connected in sequence; one end of the bridge circuit is connected to the sensing unit, and the other end is connected to the modulation signal source; the sensing unit is used to sense the change in the electric field strength of the AC and DC electric fields to be measured and output the induced signal; the modulation signal source is used to provide an AC signal source for the bridge circuit when the induced signal is a DC signal, so as to modulate the DC signal that is difficult to collect by the bridge circuit into an AC signal; the bridge circuit is used to amplify the induced signal to obtain a modulation signal; the signal processing circuit is used to process the modulation signal to obtain a target signal, wherein the target signal corresponds to the electric field strength of the AC and DC electric fields to be measured; compared with traditional electro-optical electric field sensors and mechanical electric field sensors, the device can accurately measure the DC electric field; and can also measure the AC electric field. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the drawings required for use in the embodiments of the present application or related technical descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0048] Figure 1 is a structural block diagram of an AC and DC electric field measuring device based on a microelectronic device in one embodiment;

[0049] Figure 2 The variable capacitance characteristics of the acquisition circuit of the AC and DC electric field measurement device based on microelectronic devices according to the electric field strength in one embodiment;

[0050] Figure 3 is the DC electric field response linearity of an AC and DC electric field measurement device based on a microelectronic device in one embodiment;

[0051] Figure 4 is the AC electric field response linearity of an AC and DC electric field measurement device based on a microelectronic device in one embodiment;

[0052] Figure 5 is a structural block diagram of an AC and DC electric field measuring device based on a microelectronic device in another embodiment;

[0053] Figure 6 is a structural block diagram of an AC and DC electric field measuring device based on a microelectronic device in another embodiment;

[0054] Figure 7 is a structural block diagram of an AC and DC electric field measuring device based on a microelectronic device in another embodiment;

[0055] Figure 8 is a structural block diagram of an AC and DC electric field measuring device based on a microelectronic device in another embodiment;

[0056] Fig. 9 is a schematic flow chart of an AC and DC electric field measurement method based on a microelectronic device in another embodiment;

[0057] Fig.10 is a structural block diagram of an AC and DC electric field measuring device based on a microelectronic device in another embodiment;

[0058] Description of reference numerals:

[0059] Sensing unit 10; bridge circuit 20; microelectronic device 201;

[0060] First bridge arm 202; first field effect transistor 2021; second field effect transistor 2022;

[0061] The second bridge arm 203; the third field effect transistor 2031; the fourth field effect transistor 2032;

[0062] Modulation signal source 30; signal processing circuit 40; amplifier circuit 401;

[0063] Microcontroller 402; processor 403; DC blocking capacitor 50;

[0064] Resistor 60; Adjustment capacitor 70. DETAILED DESCRIPTION

[0065] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0066] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned figure descriptions and any variations thereof are intended to cover non-exclusive inclusions.

[0067] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

[0068] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0069] In recent years, with the increasing depletion of fossil fuels, the transition to clean and low-carbon energy is urgently required. The access of large-scale distributed clean energy and nonlinear power electronic devices in new power systems has led to a significant increase in the range and frequency band of the system's electrical measurement signals, and there is an urgent need for real-time measurement feedback and dynamic adjustment of the power grid state. Electric field information is one of the basic physical quantities of the power system. It contains a large amount of information on the operating status of power grid equipment. Through edge computing, deep learning, artificial intelligence and other methods, intelligent perception of equipment status and intelligent self-healing of faults can be quickly realized. Therefore, as the nerve endings of the digital power grid, the intelligent electric field sensor unit is the basic support for realizing the intelligent perception of the status of each link of the source, grid, load and storage, deep information fusion and resource optimization allocation. It is urgent to develop a new electric field sensor unit suitable for wide-area distributed broadband monitoring of the new power system.

[0070] In response to the digital development needs of new power systems, sensor units must take into account many performance requirements such as miniaturization, wide bandwidth, wide range, strong stability, and easy integration. Electro-optical electric field sensing units modulate electric field signals into optical signals for sensing based on the electro-optic effect. However, under the action of DC or extremely low frequency electric fields, electro-optical crystal materials are affected by charge accumulation to produce an electric field in the opposite direction to the external direction, making it impossible to accurately measure the DC electric field. In addition, optical sensitive elements are large in size and difficult to integrate with light sources and optical detectors. Mechanical electric field sensing units modulate difficult-to-observe DC signals into easy-to-measure AC signals, mainly including field grinding sensing units and microelectromechanical systems (MEMS) sensing units. However, their mechanical components are easily damaged, which seriously affects their service life. The driving circuit of MEMS electric field sensing units is complex and difficult to miniaturize, resulting in unstable signals and susceptibility to external noise interference. In recent years, with the continuous improvement of the performance of third-generation power semiconductor devices, researchers have found that solid-state electronic devices including varactor diodes, microelectronic devices, multilayer ceramic capacitors, etc. have good linearity for electric fields through reasonable design. Since electronic electric field sensing units have no moving parts, the interference caused by movable parts to electric field measurement can be fundamentally solved. The electronic electric field sensing unit has a simple structure, can be miniaturized, is easy to integrate, and has strong stability. It can be used to measure AC / DC mixed broadband signals and is the most likely solution to meet the requirements of AC / DC and harmonic micro broadband sensing in new power systems. The output response linear range of the electronic sensing unit is narrow and easy to saturate. There is a lack of feasible linear range control methods, and new technological breakthroughs are urgently needed.

[0071] The present application provides an AC and DC electric field measuring device and method based on microelectronic devices, aiming to solve the above technical problems. The following embodiments will specifically illustrate the AC and DC electric field measuring device and method based on microelectronic devices of the present application.

[0072] In one embodiment, Figure 1 As shown, an AC and DC electric field measuring device based on microelectronic devices is provided, and the device includes a sensing unit 10, a bridge circuit 20, a modulation signal source 30 and a signal processing circuit 40 connected in sequence; one end of the bridge circuit 20 is connected to the sensing unit 10, and the other end is connected to the modulation signal source 30; the sensing unit 10 is used to sense the change of the electric field strength of the AC and DC electric fields to be measured, and output the induced signal; the modulation signal source 30 is used to provide an AC signal source for the bridge circuit 20 when the induced signal is a DC signal, so as to modulate the DC signal that is difficult to collect by the bridge circuit 20 into an AC signal; the bridge circuit 20 is used to amplify the induced signal to obtain a modulation signal; the signal processing circuit 40 is used to process the modulation signal to obtain a target signal, wherein the target signal corresponds to the electric field strength of the AC and DC electric fields to be measured.

[0073] The sensing unit 10 is used to sense the changes in the electric field strength of the AC and DC electric fields to be measured, and convert these changes into corresponding induced signals for output. The induced signals can be voltage, current or other forms of signals. It should be noted that the sensing unit 10 can simultaneously measure DC, AC, harmonic and transient signals, and has a wideband characteristic.

[0074] Since it is usually difficult for the bridge circuit 20 to collect a DC signal, the task of the modulation signal source 30 is to modulate the DC signal into an AC signal so that the bridge circuit 20 can perform effective measurements. Usually, the modulation signal source 30 generates a stable AC signal and mixes or modulates it with the DC signal to be measured. In this way, even when the input of the bridge circuit 20 is a DC signal, an AC signal containing the required information will be generated at the output end. This AC signal can be amplified and processed by the bridge circuit 20, thereby achieving the measurement of the DC electric field to be measured.

[0075] The bridge circuit 20 amplifies the sensing signal to generate a modulation signal for further processing by the subsequent signal processing circuit 40. The bridge circuit 20 receives the sensing signal from the sensor unit 10, amplifies it, and generates a modulation signal.

[0076] The signal processing circuit 40 processes the modulated signal to obtain the final target signal. There is a corresponding relationship between the target signal and the electric field strength of the AC and DC electric field to be measured. The signal processing circuit 40 may include multiple parts, such as filters, amplifiers, analog-to-digital converters, digital signal processors 403, etc. These parts work together to filter, amplify, sample and digitally process the modulated signal to finally obtain the target signal. Specifically, the signal processing circuit 40 filters the modulated signal to remove stray signals or noise; then amplifies the filtered signal to increase the amplitude and dynamic range of the signal; then, an analog-to-digital converter is used to convert the analog signal into a digital signal, and digital signal processing technology is used to further process it, such as digital filtering, data correction, data compression, etc., to finally obtain the target signal. In the entire signal processing process, factors such as signal accuracy, stability, and dynamic range need to be considered to ensure that the target signal can accurately reflect the changes in the electric field strength of the electric field to be measured, thereby meeting the requirements for accurate measurement.

[0077] The corresponding relationship between the target signal and the electric field strength of the electric field to be measured is as follows: Figure 2 As shown. In actual DC electric field measurement, within the range, it is also hoped that the output change is monotonic, so the B2-C2 segment is used to measure the external DC electric field. The range can be adjusted to the monotonic linear interval by adjusting the parameters. Among them, the target signal corresponds to Figure 2 The sensing unit 10 outputs.

[0078] Figure 3 is the linearity of DC electric field response. From the test results, it can be seen that the sensor unit 10 has a high linearity and measurement range. The DC electric field response range is -10kV / cm to 10kV / cm, the resolution is 178V / m, and the linearity R square (COD) is 0.999.

[0079] Figure 4 It responds to 50Hz AC electric field, with a range of 0~10kV / cm, a linearity of 0.999, and a resolution of From the test results, it can be seen that the sensing unit 10 has a high linearity and measurement range.

[0080] The AC and DC electric field measuring device based on microelectronic devices provided in this embodiment includes a sensing unit, a bridge circuit, a modulation signal source and a signal processing circuit connected in sequence; one end of the bridge circuit is connected to the sensing unit, and the other end is connected to the modulation signal source; the sensing unit is used to sense the change in the electric field strength of the AC and DC electric fields to be measured and output the sensing signal; the modulation signal source is used to provide an AC signal source for the bridge circuit when the sensing signal is a DC signal, so as to modulate the DC signal that is difficult to collect by the bridge circuit into an AC signal; the bridge circuit is used to amplify the sensing signal to obtain a modulation signal; the signal processing circuit is used to process the modulation signal to obtain a target signal, wherein the target signal corresponds to the electric field strength of the AC and DC electric fields to be measured; compared with traditional electro-optical electric field sensors and mechanical electric field sensors, the device can accurately measure the DC electric field; and can also measure the AC electric field.

[0081] In one embodiment, an AC and DC electric field measuring device based on a microelectronic device is also provided. Figure 5 The bridge circuit 20 includes four microelectronic devices 201 connected in series and in parallel in reverse order.

[0082] The microelectronic device 201 refers to an electronic device with a size of micrometers, which is usually manufactured by microelectronic processing technology. Common microelectronic devices 201 include micro transistors (such as field effect transistors), MEMS sensors, optoelectronic devices (such as photodiodes, lasers, etc.), etc.

[0083] The bridge circuit 20 composed of four microelectronic devices 201 connected in series and parallel in opposite directions is often used to measure small signals or detect small changes, and has advantages including high sensitivity, high anti-interference ability and high accuracy. The four microelectronic devices 201 are connected in series and parallel in a certain connection mode to form a bridge structure. Two of the devices are connected in series, and then connected in parallel with the other two devices in series. This connection mode can maximize the unbalanced signal generated by the bridge when it is affected by the outside world, thereby improving sensitivity and stability.

[0084] The working principle of the bridge circuit 20 is based on its balance condition. When the bridge circuit 20 is in a balanced state, the output signal is zero; when the bridge circuit 20 is affected by the outside world or the signal to be measured, the bridge will lose balance, thereby generating a non-zero output signal. By measuring the size of this output signal, information about the signal to be measured can be obtained.

[0085] In one embodiment, an AC and DC electric field measuring device based on a microelectronic device is also provided. Figure 6 and Figure 7 As shown, the microelectronic device 201 is a field effect tube, and the bridge circuit 20 includes a first bridge arm 202 and a second bridge arm 203;

[0086] The first bridge arm 202 includes a first field effect tube 2021 and a second field effect tube 2022; the source and drain of the first field effect tube 2021 are short-circuited, the source and drain of the second field effect tube 2022 are short-circuited, and the short-circuited end is connected to the signal processing circuit 40; the gate of the first field effect tube 2021 is connected to the sensor unit 10; the gate of the second field effect tube 2022 is connected to the modulation signal source 30;

[0087] The second bridge arm 203 includes a third field effect transistor 2031 and a fourth field effect transistor 2032; the gate of the third field effect transistor 2031 and the gate of the fourth field effect transistor 2032 are short-circuited, and the short-circuited end is connected to the signal processing circuit 40; the source and drain of the third field effect transistor 2031 are short-circuited and connected to the sensing unit 10; the source and drain of the fourth field effect transistor 2032 are short-circuited and connected to the modulation signal source 30.

[0088] In this embodiment, an AC and DC electric field measuring device based on a microelectronic device is also provided. Figure 7 As shown, the above device further includes a DC blocking capacitor 50 ; the DC blocking capacitor 50 is arranged between the bridge circuit 20 and the signal processing circuit 40 .

[0089] The function of the DC blocking capacitor 50 is to prevent the HVDC voltage on the MOS varactor from being divided to zero when the MOS varactor is grounded with high impedance. The DC blocking capacitor 50 is arranged between the bridge circuit 20 and the modulation signal source 30. Its main function is to prevent the MOS varactor from being grounded with high impedance, causing the high voltage direct current (HVDC) voltage on the MOS varactor to be divided to zero.

[0090] In the AC / DC electric field measuring device based on microelectronic devices, the collected signals may have various interferences, including interference from the DC power supply. This interference may have a negative impact on the normal operation of the bridge circuit 20, especially when the impedance of the MOS varactor is high. The presence of the DC blocking capacitor 50 can effectively block this DC interference, ensuring that the bridge circuit 20 operates in a stable state, thereby ensuring accurate signal collection and processing. Therefore, the role of the DC blocking capacitor 50 in the AC / DC electric field measuring device based on microelectronic devices is to ensure signal quality and system stability, thereby improving the accuracy and reliability of the measurement.

[0091] In one embodiment, an AC and DC electric field measuring device based on a microelectronic device is also provided. Figure 7 The device further includes a resistor 60 ; the resistor 60 is connected to the DC blocking capacitor 50 .

[0092] Among them, the appropriate selection of resistor 60 can make the DC blocking capacitor 50 not affect the symmetry of the bridge. This is crucial for the accuracy of the AC and DC electric field measurement device based on microelectronic devices, because any factor affecting the symmetry of the bridge will lead to an increase in measurement errors. Resistor 60 can limit the input signal of the amplifier circuit 401 to a suitable range. By selecting an appropriate resistance value, such as 10MΩ, it can be ensured that the input signal is not too large or too small, thereby protecting the amplifier circuit 401 from damage.

[0093] In one embodiment, an AC and DC electric field measuring device based on a microelectronic device is also provided. Figure 7 The above device further includes an adjustment capacitor 70; the adjustment capacitor 70 is connected in parallel with the resistor 60. The adjustment capacitor 70 is used to adjust the frequency response characteristics of the entire system.

[0094] In one embodiment, an AC and DC electric field measuring device based on a microelectronic device is also provided. Figure 7 and Figure 8 The signal processing circuit 40 includes an amplifier circuit 401 and a microcontroller 402. One end of the amplifier circuit 401 is connected to the microcontroller 402, and the other end is connected to the bridge circuit 20. The amplifier circuit 401 is used to amplify the collected signal, and the microcontroller 402 is used to process the collected signal to obtain the target signal. The microcontroller 402 can also transmit the target signal to the processor 403 for further processing.

[0095] Based on any of the AC and DC electric field measurement devices based on microelectronic devices provided in the above embodiments, the present application also provides an AC and DC electric field measurement method based on microelectronic devices, such as Fig. 9 As shown, the AC and DC electric field measurement method based on microelectronic devices is applied to an AC and DC electric field measurement device based on microelectronic devices as an example for explanation, and the method includes:

[0096] S902, sensing the change of the electric field strength of the AC and DC electric fields to be measured, and outputting a sensing signal.

[0097] S904, when the induced signal is a DC signal, provide an AC signal source for the bridge circuit to modulate the DC signal that is difficult for the bridge circuit to collect into an AC signal.

[0098] S906, amplify the sensing signal to obtain a modulated signal.

[0099] S908, processing the modulated signal to obtain a target signal, wherein the target signal corresponds to the electric field strength of the AC and DC electric fields to be measured.

[0100] The above steps have been explained in the previous content. Please refer to the previous instructions for details and will not be repeated here.

[0101] Based on the same inventive concept, the embodiment of the present application also provides an AC / DC electric field measuring device based on a microelectronic device for implementing the AC / DC electric field measuring method based on a microelectronic device involved above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above method, so the specific limitations in the embodiments of one or more AC / DC electric field measuring devices based on microelectronic devices provided below can refer to the limitations of the AC / DC electric field measuring method based on microelectronic devices above, and will not be repeated here.

[0102] In an exemplary embodiment, Fig.10 As shown, an AC and DC electric field measuring device based on microelectronic devices is provided, comprising: a sensing module 11, a modulation module 12, an amplification module 13 and a processing module 14, wherein:

[0103] The sensing module 11 is used to sense the change of the electric field strength of the AC and DC electric fields to be measured and output a sensing signal;

[0104] The modulation module 12 is used to provide an AC signal source for the bridge circuit when the sensing signal is a DC signal, so as to modulate the DC signal that is difficult to be collected by the bridge circuit into an AC signal;

[0105] The amplification module 13 is used to amplify the sensing signal to obtain a modulated signal;

[0106] The processing module 14 is used to process the modulated signal to obtain a target signal, wherein the target signal corresponds to the electric field strength of the AC and DC electric fields to be measured.

[0107] Each module in the above-mentioned AC and DC electric field measurement device based on microelectronic devices can be implemented in whole or in part by software, hardware and a combination thereof. Each of the above-mentioned modules can be embedded in or independent of a processor in a computer device in the form of hardware, or can be stored in a memory in a computer device in the form of software, so that the processor can call and execute the operations corresponding to each of the above modules.

[0108] In an exemplary embodiment, a computer device is provided, which may be a server. The computer device includes a processor, a memory, an input / output interface (I / O for short) and a communication interface. The processor, the memory and the input / output interface are connected via a system bus, and the communication interface is connected to the system bus via the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the computer device is used to store AC and DC electric field measurement data. The input / output interface of the computer device is used to exchange information between the processor and an external device. The communication interface of the computer device is used to communicate with an external terminal via a network connection. When the computer program is executed by the processor, an AC and DC electric field measurement method based on a microelectronic device is implemented.

[0109] In an exemplary embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the following steps are implemented:

[0110] Inducing the change of the electric field strength of the AC and DC electric fields to be measured and outputting the induced signals;

[0111] When the induced signal is a DC signal, an AC signal source is provided to the bridge circuit to modulate the DC signal which is difficult to be collected by the bridge circuit into an AC signal;

[0112] Amplifying the induced signal to obtain a modulated signal;

[0113] The modulated signal is processed to obtain a target signal, wherein the target signal corresponds to the electric field strength of the AC and DC electric fields to be measured.

[0114] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processor, the following steps are implemented:

[0115] Inducing the change of the electric field strength of the AC and DC electric fields to be measured and outputting the induced signals;

[0116] When the induced signal is a DC signal, an AC signal source is provided to the bridge circuit to modulate the DC signal which is difficult to be collected by the bridge circuit into an AC signal;

[0117] Amplifying the induced signal to obtain a modulated signal;

[0118] The modulated signal is processed to obtain a target signal, wherein the target signal corresponds to the electric field strength of the AC and DC electric fields to be measured.

[0119] In one embodiment, a computer program product is provided, comprising a computer program, which, when executed by a processor, implements the following steps:

[0120] Inducing the change of the electric field strength of the AC and DC electric fields to be measured and outputting the induced signals;

[0121] When the induced signal is a DC signal, an AC signal source is provided to the bridge circuit to modulate the DC signal which is difficult to be collected by the bridge circuit into an AC signal;

[0122] Amplifying the induced signal to obtain a modulated signal;

[0123] The modulated signal is processed to obtain a target signal, wherein the target signal corresponds to the electric field strength of the AC and DC electric fields to be measured.

[0124] A person of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment method can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in the present application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, an artificial intelligence (AI) processor, etc., but are not limited to this.

[0125] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.

[0126] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. An AC and DC electric field measuring device based on microelectronic devices, characterized in that: The device comprises a sensing unit, a bridge circuit, a modulation signal source and a signal processing circuit connected in sequence; one end of the bridge circuit is connected to the sensing unit, and the other end is connected to the modulation signal source; the bridge circuit comprises four microelectronic devices connected in series and parallel in reverse order; the microelectronic device is a field effect transistor, and the bridge circuit comprises a first bridge arm and a second bridge arm; The first bridge arm includes a first field effect tube and a second field effect tube; the source and drain of the first field effect tube are short-circuited, the source and drain of the second field effect tube are short-circuited, and the short-circuited end is connected to the signal processing circuit; the gate of the first field effect tube is connected to the sensing unit; the gate of the second field effect tube is connected to the modulation signal source; The second bridge arm includes a third field effect tube and a fourth field effect tube; the gate of the third field effect tube and the gate of the fourth field effect tube are short-circuited, and the short-circuited end is connected to the signal processing circuit; the source and drain of the third field effect tube are short-circuited and connected to the sensing unit; the source and drain of the fourth field effect tube are short-circuited and connected to the modulation signal source; The sensing unit is used to sense the change in the electric field strength of the AC and DC electric fields to be measured and output a sensing signal; The modulation signal source is used to provide an AC signal source for the bridge circuit when the induction signal is a DC signal, so as to modulate the DC signal that is difficult to be collected by the bridge circuit into an AC signal; The bridge circuit is used to amplify the sensing signal to obtain a modulated signal; The signal processing circuit is used to process the modulated signal to obtain a target signal, wherein there is a corresponding relationship between the target signal and the electric field strength of the AC and DC electric fields to be measured.

2. The AC and DC electric field measuring device based on microelectronic devices according to claim 1, characterized in that: The device further comprises a DC blocking capacitor, which is arranged between the bridge circuit and the signal processing circuit.

3. The AC and DC electric field measuring device based on microelectronic devices according to claim 2, characterized in that: The device also includes a resistor; the resistor is connected to the DC blocking capacitor.

4. The AC and DC electric field measuring device based on microelectronic devices according to claim 3, characterized in that: The device also includes an adjusting capacitor; the adjusting capacitor is connected in parallel with the resistor.

5. The AC and DC electric field measuring device based on microelectronic devices according to claim 1, characterized in that: The signal processing circuit comprises an amplifier circuit and a microcontroller, one end of the amplifier circuit is connected to the microcontroller, and the other end is connected to the bridge circuit; The amplifier circuit is used to amplify the modulated signal, and the microcontroller is used to process the modulated signal to obtain the target signal.

6. A method for measuring AC and DC electric fields based on microelectronic devices, characterized in that: The method comprises: The sensor unit senses the change in the electric field strength of the AC and DC electric fields to be measured and outputs a sensing signal; In the case where the induction signal is a DC signal, an AC signal source is provided to the bridge circuit through a modulation signal source to modulate the DC signal that is difficult to collect by the bridge circuit into an AC signal; the bridge circuit includes four microelectronic devices connected in series and parallel in reverse order; the microelectronic device is a field effect tube, and the bridge circuit includes a first bridge arm and a second bridge arm; the first bridge arm includes a first field effect tube and a second field effect tube; the source and drain of the first field effect tube are short-circuited, the source and drain of the second field effect tube are short-circuited, and the short-circuited end is connected to a signal processing circuit; the gate of the first field effect tube is connected to a sensing unit; the gate of the second field effect tube is connected to the modulation signal source; the second bridge arm includes a third field effect tube and a fourth field effect tube; the gate of the third field effect tube is short-circuited with the gate of the fourth field effect tube, and the short-circuited end is connected to the signal processing circuit; the source and drain of the third field effect tube are short-circuited and connected to the sensing unit; the source and drain of the fourth field effect tube are short-circuited and connected to the modulation signal source; amplifying the sensing signal to obtain a modulated signal; The modulated signal is processed to obtain a target signal, wherein the target signal corresponds to the electric field strength of the AC and DC electric fields to be measured.

7. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that: When the processor executes the computer program, the steps of the method according to claim 6 are implemented.

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