A self-cleaning optimization method and system for ion beam deposition device

By setting up monitoring, diagnosis, solution design, execution control and verification evaluation modules in the ion beam deposition device, an automated self-cleaning process is realized, which solves the problem of accumulation of impurities and sediments within the device and improves the performance and stability of the device.

CN118703965BActive Publication Date: 2025-02-25BEIJING SCI & TECH PATENT OFFICE
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Patent Information

Application Number
CN202410760389.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-06-13
Publication Date
2025-02-25
Estimated Expiration
2044-06-13

AI Technical Summary

Technical Problem

As the usage time increases, impurities and sediments will be generated inside the ion beam deposition device, affecting the quality of the deposition layer and the performance of the device.

Method used

An automated self-cleaning process is realized by setting up a monitoring module, a diagnostic module, a solution design module, an execution control module and a verification evaluation module in the ion beam deposition device. The system monitors the device status in real time, diagnoses cleaning requirements, and performs an optimized cleaning process.

Benefits of technology

Through the automated self-cleaning process, the performance and stability of the ion beam deposition device are improved, ensuring the continuous and efficient operation of the device.

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Abstract

The present invention discloses a self-cleaning optimization method and system for an ion beam deposition device, which relates to the technical field of thin film deposition and material modification, and aims to perform regular or real-time cleaning of the ion beam deposition device through automated and intelligent means to remove impurities and pollutants generated during the deposition process; through sensors integrated in the ion beam deposition device, real-time monitoring of key parameters such as temperature, pressure, ion beam intensity in the deposition chamber, and the surface state of the deposited layer; using advanced data analysis algorithms, processing and analyzing real-time monitoring data to predict the trend and location of impurity accumulation, and automatically formulating personalized self-cleaning strategies based on data analysis results, and automatically executing self-cleaning strategies through a control system without manual intervention. At the same time, the system can also record data during the cleaning process for subsequent analysis and optimization. Ion beam deposition devices are widely used in semiconductor manufacturing, material science and other fields.
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Description

Technical Field

[0001] The invention relates to the technical field of thin film deposition and material modification, and in particular to a self-cleaning optimization method and system for an ion beam deposition device. Background Art

[0002] Ion beam deposition is a technology used for material surface modification and thin film deposition. During the ion beam deposition process, due to various reasons (such as gas leakage, impurity contamination, chemical reaction, etc.), some pollutants may accumulate in the deposition chamber, which may affect the quality and uniformity of the deposited layer and may even cause equipment failure.

[0003] Ion beam deposition device self-cleaning refers to a function or technology that the device has that can automatically remove contaminants in the deposition chamber. The ion beam deposition device itself can generate high-energy ion beams. During the deposition process or within a specific period of time, the device can adjust the parameters of the ion beam (such as beam intensity, energy, scanning mode, etc.) to bombard the inner wall or specific area of ​​the deposition chamber, thereby removing attached contaminants;

[0004] However, in the application of ion beam deposition technology, as the use time of existing ion beam deposition devices increases, impurities and deposits are often generated inside the device, thereby affecting the quality of the deposited layer and the performance of the device. Therefore, an effective self-cleaning optimization method and system are needed to ensure that the ion beam deposition device can operate continuously and efficiently. Summary of the invention

[0005] The purpose of the present invention is to provide a self-cleaning optimization method and system for an ion beam deposition device to solve the problem raised in the above background technology that as the use time increases, impurities and deposits tend to be generated inside the device, thereby affecting the quality of the deposited layer and the performance of the device.

[0006] To achieve the above object, the present invention provides the following technical solution: a self-cleaning optimization method for an ion beam deposition device, comprising the following steps:

[0007] S1. First, check the working status of the ion beam deposition device, including the thickness of the deposited layer, the impurity content, and the surface quality;

[0008] S2. Perform a self-cleaning operation according to the cleaning plan to remove impurities and contaminants in the deposited layer, and further observe the self-cleaning process of the ion beam deposition device;

[0009] S3. Based on the observation of the self-cleaning process of the ion beam deposition device in step S2, a performance evaluation is performed, and improvements are made to the design scheme for the problems that arise therein, including adding a control module to automatically adjust the device parameters and start the self-cleaning process; when an abnormal situation occurs during the cleaning process, emergency measures are taken in a timely manner to ensure the safety of equipment and personnel;

[0010] S4. Evaluate the cleaning effect and adjust the best cleaning solution parameters to current settings.

[0011] As a further description of the above technical solution:

[0012] In the process of checking the working status of the ion beam deposition device, a detection module is used to continuously monitor the thickness of the deposited layer, the impurity content, and the surface quality; collect and analyze the monitored data to identify potential problems or signs of performance degradation; based on data analysis, identify possible contamination or cleaning problems in the deposition device; in steps S2 and S3, the urgency and need for cleaning are evaluated based on the results of monitoring and diagnosis; then, based on the structure, materials, and process requirements of the device, a targeted self-cleaning plan is formulated. The feasibility and effectiveness of the cleaning plan are verified through simulation or experiment. After the cleaning is completed, the practical results are evaluated and the evaluation results are fed back to the plan steps S2 and S3 for subsequent optimization and improvement.

[0013] As a further description of the above technical solution:

[0014] A self-cleaning optimization system for an ion beam deposition device includes the following modules:

[0015] a. A monitoring module, used to monitor the working status of the ion beam deposition device in real time;

[0016] b. Diagnostic module, used to process and analyze monitoring data, identify cleaning needs and determine cleaning priorities;

[0017] c. Scheme design module, used to formulate self-cleaning schemes according to cleaning requirements and device characteristics;

[0018] d. An execution control module, which is used to automatically adjust the device parameters according to the cleaning scheme, start the self-cleaning process, and continuously monitor the device status during the cleaning process;

[0019] e. Verification and evaluation module, used to evaluate the cleaning effect and feed back the evaluation results to the program design module and execution control module.

[0020] As a further description of the above technical solution:

[0021] It also includes a data storage module for storing monitoring data, cleaning solutions, cleaning process records, and evaluation results. The execution control module is the core component of the system, responsible for real-time monitoring and control of the deposition process. The execution control module also includes a real-time monitoring algorithm, a deposition process control algorithm, a self-cleaning algorithm, and a fault diagnosis and recovery algorithm.

[0022] As a further description of the above technical solution:

[0023] The execution control module self-cleaning algorithm includes:

[0024] Pollution detection: By monitoring the gas composition and deposition rate parameters in the deposition chamber, determine whether there is pollution, connect the fan control system electrically to the execution module, and use the fan control system to collect and discharge the polluted gas components separately into the designated storage chamber;

[0025] Cleaning strategy selection: Select an appropriate cleaning strategy based on the type and degree of contamination, including increasing the ion beam intensity, changing the deposition angle, and introducing a cleaning gas;

[0026] Cleaning process control: During the cleaning process, the cleaning effect is monitored in real time, and the cleaning strategy is adjusted as needed to ensure the efficiency and safety of the cleaning process.

[0027] Compared with the prior art, the present invention has the following beneficial effects:

[0028] The present invention implements the self-cleaning process in the ion beam deposition device according to the specific steps of the self-cleaning optimization method of the ion beam deposition device by setting a monitoring module, a diagnosis module, a scheme design module, an execution control module, and a verification and evaluation module program in the system, so as to monitor the device status in an automated manner, diagnose the cleaning requirements, and execute the optimized cleaning process, thereby improving the performance and stability of the ion beam deposition device. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A schematic diagram of the structure of the steps of a self-cleaning optimization system for an ion beam deposition device according to the present invention;

[0030] Figure 2 This is a module diagram of a self-cleaning optimization system for an ion beam deposition device of the present invention. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] A self-cleaning optimization method for an ion beam deposition device comprises the following steps:

[0033] S1. First, check the working status of the ion beam deposition device, including the thickness of the deposited layer, the impurity content, and the surface quality;

[0034] S2. Perform a self-cleaning operation according to the cleaning plan to remove impurities and contaminants in the deposited layer, and further observe the self-cleaning process of the ion beam deposition device;

[0035] S3. Based on the observation of the self-cleaning process of the ion beam deposition device in step S2, a performance evaluation is performed, and improvements are made to the design scheme for the problems that arise therein, including adding a control module to automatically adjust the device parameters and start the self-cleaning process; when an abnormal situation occurs during the cleaning process, emergency measures are taken in a timely manner to ensure the safety of equipment and personnel;

[0036] S4. Evaluate the cleaning effect and adjust the best cleaning solution parameters to current settings.

[0037] The self-cleaning process in S2 refers to the self-cleaning operation according to the cleaning plan to remove impurities and pollutants in the deposited layer. The self-cleaning program is started to monitor various parameters during the cleaning process to ensure that the cleaning effect reaches the expected level.

[0038] The performance evaluation in S3 refers to verifying whether the performance of the ion beam deposition device has been improved after self-cleaning; re-testing the thickness of the deposited layer, impurity content, surface roughness and other indicators, and comparing and analyzing them with those before cleaning. Based on the results of performance verification, the self-cleaning scheme is further optimized and adjusted. Adjust the cleaning parameters, such as increasing the cleaning time and increasing the ion beam energy, to obtain better cleaning results.

[0039] In more detail, learn to maintain and service the ion beam deposition device when using it, including ensuring that the ion beam deposition device maintains good self-cleaning performance during long-term operation. It is also necessary to regularly maintain and service the device, such as replacing wearing parts and checking sealing performance.

[0040] In further detail, a cleaning file should be established when the ion beam deposition device is used; the cleaning history and maintenance records of the ion beam deposition device should be recorded to provide a reference for future cleaning and maintenance.

[0041] By recording in detail the various parameters of the cleaning process, cleaning effects, and maintenance and care.

[0042] Further details, continuous improvement and innovation in the use of ion beam deposition equipment; through continuous technological innovation and improvement, improve the self-cleaning performance of ion beam deposition equipment. Research new cleaning methods and technologies, explore more efficient self-cleaning solutions to adapt to changing process requirements.

[0043] In the process of checking the working status of the ion beam deposition device, the detection module is used to continuously monitor the thickness of the deposited layer, the impurity content, and the surface quality; collect and analyze the monitored data to identify potential problems or signs of performance degradation; based on data analysis, identify possible contamination or cleaning problems in the deposition device; in steps S2 and S3, the urgency and need for cleaning are evaluated based on the results of monitoring and diagnosis; then, based on the structure, materials, and process requirements of the device, a targeted self-cleaning plan is formulated. Finally, the feasibility and effectiveness of the cleaning plan are verified through simulation or experiment.

[0044] After cleaning is completed, the practice results are evaluated and the evaluation results are fed back to the program steps S2 and S3 for subsequent optimization and improvement. This includes evaluating the cleaning effect of the device after cleaning is completed, including indicators such as deposition layer thickness, impurity content, and surface quality; data analysis: in-depth analysis of the evaluation data to compare performance changes before and after cleaning; result feedback: feedback the evaluation results to the program design module and execution control module for subsequent optimization and improvement.

[0045] An ion beam deposition device self-cleaning optimization system includes the following modules:

[0046] a. A monitoring module, used to monitor the working status of the ion beam deposition device in real time;

[0047] b. Diagnostic module, used to process and analyze monitoring data, identify cleaning needs and determine cleaning priorities;

[0048] c. Scheme design module, used to formulate self-cleaning schemes according to cleaning requirements and device characteristics;

[0049] d. An execution control module, which is used to automatically adjust the device parameters according to the cleaning scheme, start the self-cleaning process, and continuously monitor the device status during the cleaning process;

[0050] e. Verification and evaluation module, used to evaluate the cleaning effect and feed back the evaluation results to the program design module and execution control module.

[0051] It also includes a data storage module for storing monitoring data, cleaning plans, cleaning process records and evaluation results.

[0052] In further detail, the execution control module is the core component of the system, responsible for real-time monitoring and control of the deposition process. The execution control module also includes a real-time monitoring algorithm, a deposition process control algorithm, a self-cleaning algorithm, and a fault diagnosis and recovery algorithm. Among them, the real-time monitoring algorithm is responsible for receiving sensor data, performing data verification and anomaly detection to ensure the accuracy and reliability of the data. The deposition process control algorithm controls the operating status of components such as the ion beam source, vacuum system, and temperature control system based on the requirements of the deposition process to maintain a stable deposition environment and quality. This usually includes ion beam intensity control, vacuum control, and temperature control.

[0053] The execution control module self-cleaning algorithm includes:

[0054] Pollution detection: By monitoring the gas composition and deposition rate parameters in the deposition chamber, determine whether there is pollution, connect the fan control system electrically to the execution module, and use the fan control system to collect and discharge the polluted gas components separately into the designated storage chamber;

[0055] Cleaning strategy selection: Select an appropriate cleaning strategy based on the type and degree of contamination, including increasing the ion beam intensity, changing the deposition angle, and introducing a cleaning gas;

[0056] Cleaning process control: During the cleaning process, the cleaning effect is monitored in real time, and the cleaning strategy is adjusted as needed to ensure the efficiency and safety of the cleaning process.

[0057] Working principle: The present invention implements the self-cleaning process in the ion beam deposition device according to the specific steps of the self-cleaning optimization method of the ion beam deposition device by setting a monitoring module, a diagnosis module, a scheme design module, an execution control module, and a verification and evaluation module program in the system, aiming to monitor the device status in an automated manner, diagnose the cleaning requirements, and execute the optimized cleaning process, thereby improving the performance and stability of the ion beam deposition device;

[0058] The pollution detection program in the execution control module is used to monitor the gas composition and deposition rate parameters in the deposition chamber to determine whether there is pollution. The execution module is electrically connected to the fan control system, and the polluted gas components are separately collected and discharged into the designated storage chamber by the fan control system, thereby playing a role in protecting the environment.

[0059] The system can also record data from the cleaning process for subsequent analysis and optimization. Ion beam deposition devices are widely used in semiconductor manufacturing, material science and other fields.

[0060] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A self-cleaning optimization method for an ion beam deposition device, characterized in that: The steps include: S1. First, check the working status of the ion beam deposition device, including the thickness of the deposited layer, the impurity content, and the surface quality; S2. Implement a self-cleaning operation, perform a self-cleaning operation according to a cleaning plan, remove impurities and contaminants in the deposited layer, and further observe the self-cleaning process of the ion beam deposition device; S3, based on the observation of the self-cleaning process of the ion beam deposition device in step S2, a performance evaluation is performed, and a solution is designed to improve the problems that arise therein, including adding a control module to automatically adjust device parameters and start the self-cleaning process; When abnormal situations occur during the cleaning process, take emergency measures in time to ensure the safety of equipment and personnel; S4, evaluating the cleaning effect and adjusting the best cleaning solution parameters to the current setting; During the working status inspection of the ion beam deposition device, the detection module is used to continuously monitor the thickness of the deposited layer, the impurity content, and the surface quality; Collect and analyze monitored data to identify potential problems or signs of performance degradation; Identify possible contamination or cleaning issues in the deposition equipment based on data analysis; In step S2 and step S3, the urgency and need of cleaning are evaluated according to the monitoring and diagnosis results; then, a targeted self-cleaning plan is formulated based on the structure, material and process requirements of the device; Verify the feasibility and effectiveness of cleaning solutions through simulation or experiment; After the cleaning is completed, the practice results are evaluated and fed back to the scheme steps S2 and S3 for subsequent optimization and improvement.

2. The self-cleaning optimization system for an ion beam deposition device according to claim 1, characterized in that: Includes the following modules: a. A monitoring module, used to monitor the working status of the ion beam deposition device in real time; b. Diagnostic module, used to process and analyze monitoring data, identify cleaning needs and determine cleaning priorities; c. Scheme design module, used to formulate self-cleaning schemes according to cleaning requirements and device characteristics; d. An execution control module, which is used to automatically adjust the device parameters according to the cleaning scheme, start the self-cleaning process, and continuously monitor the device status during the cleaning process; e. Verification and evaluation module, used to evaluate the cleaning effect and feed back the evaluation results to the program design module and execution control module.

3. The self-cleaning optimization system for an ion beam deposition device according to claim 2, characterized in that: It also includes a data storage module for storing monitoring data, cleaning plans, cleaning process records and evaluation results.

4. The self-cleaning optimization system for an ion beam deposition device according to claim 3, characterized in that: The execution control module is the core component of the system and is responsible for real-time monitoring and control of the deposition process. The execution control module also includes a real-time monitoring algorithm, a deposition process control algorithm, a self-cleaning algorithm, and a fault diagnosis and recovery algorithm.

5. The self-cleaning optimization system for an ion beam deposition device according to claim 4, characterized in that: The execution control module self-cleaning algorithm includes: Pollution detection: By monitoring the gas composition and deposition rate parameters in the deposition chamber, determine whether there is pollution, connect the fan control system electrically to the execution module, and use the fan control system to collect and discharge the polluted gas components separately into the designated storage chamber; Cleaning strategy selection: Select an appropriate cleaning strategy based on the type and degree of contamination, including increasing the ion beam intensity, changing the deposition angle, and introducing a cleaning gas; Cleaning process control: During the cleaning process, the cleaning effect is monitored in real time, and the cleaning strategy is adjusted as needed to ensure the efficiency and safety of the cleaning process.

Citation Information

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