A radio frequency power amplifier circuit and control method thereof

Abstract

The present invention discloses a radio frequency power amplifier circuit and a control method thereof, and relates to the technical field of chip design. The circuit comprises: a preset number of sub-amplifier units; wherein the preset number is greater than or equal to 2; each sub-amplifier unit comprises a controllable switch and a power amplifier, and is used to control the conduction state of the controllable switch and switch the working state of the power amplifier according to an input switch control signal, so as to use the power amplifier in the working state to power amplify the input radio frequency signal and output a corresponding power amplification signal; the present invention divides the radio frequency power amplifier into a plurality of sub-amplifier units, and uses each sub-amplifier unit to provide an independent radio frequency power amplification function, and the power output of all the sub-amplifier units is synthesized to obtain the final circuit output power; the working state of the power amplifier in each sub-amplifier unit is controlled by the switch, so that the circuit output power can be conveniently adjusted, and the low power consumption of the radio frequency power amplifier is achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of chip design, and in particular to a radio frequency power amplifier circuit and a control method thereof. Background Art

[0002] At present, the traditional RF power amplifier circuit has fixed gain and fixed output power, and the gain and power are not adjustable. However, in wireless communication applications, as the business scenario changes, such as factors such as distance, the output power needs to be adjusted. The existing method is to use linear backoff of the RF power amplifier circuit to reduce the output power; but linear backoff will deteriorate the efficiency of the RF power amplifier circuit and increase system power consumption.

[0003] Therefore, how to conveniently adjust the output power of the RF power amplifier circuit, ensure circuit efficiency, and achieve low power consumption of the RF power amplifier is a problem that needs to be solved urgently. Summary of the invention

[0004] The object of the present invention is to provide a radio frequency power amplifier circuit and a control method thereof, which can conveniently adjust the output power of the radio frequency power amplifier circuit, ensure circuit efficiency, and achieve low power consumption of the radio frequency power amplifier.

[0005] In order to solve the above technical problems, the present invention provides a radio frequency power amplifier circuit, comprising: a preset number of sub-power amplifier units; wherein the preset number is greater than or equal to 2;

[0006] Each of the sub-power amplifier units includes a controllable switch and a power amplifier, which is used to control the conduction state of the controllable switch and switch the working state of the power amplifier according to the input switch control signal, so as to use the power amplifier in the working state to power amplify the input radio frequency signal and output the corresponding power amplification signal; the working state includes the working state and the non-working state.

[0007] On the other hand, the power amplifier is specifically a MOS tube.

[0008] On the other hand, the radio frequency signal is a single-ended signal; the sub-power amplifier unit includes a first controllable switch and a first PMOS tube;

[0009] Among them, the gate of the first PMOS tube is used to be connected to the input end of the radio frequency signal, and the source of the first PMOS tube is used to be connected to the output end of the power supply; the drain of the first PMOS tube is connected to the first end of the first controllable switch, and the common end thereof serves as the power amplifier output end of the sub-power amplifier unit; the second end of the first controllable switch is grounded; the control end of the first controllable switch is used to be connected to the output end of the switch control signal, and is used to control the conduction and shutdown of the first controllable switch according to the switch control signal, and switch the working condition of the first PMOS tube.

[0010] On the other hand, the first controllable switch is specifically a second PMOS tube;

[0011] Among them, the source of the second PMOS tube is connected to the drain of the first PMOS tube, and their common end serves as the power amplifier output end of the sub-power amplifier unit; the drain of the second PMOS tube is grounded, and the gate of the second PMOS tube is used to be connected to the output end of the switch control signal.

[0012] On the other hand, each of the sub-power amplifier units includes at least two power amplifiers; the sub-power amplifier unit is used to control the conduction state of the controllable switch according to the input switch control signal, switch the working state of the power amplifier, so as to switch the working mode of the sub-power amplifier unit, power amplify the input radio frequency signal, and output a corresponding power amplification signal; the power amplifier in the working state of the sub-power amplifier unit is different in different working modes; the power amplification factor of the sub-power amplifier unit in at least two working modes is different.

[0013] On the other hand, each of the sub-power amplifier units includes two of the power amplifiers.

[0014] On the other hand, the radio frequency signal is a differential pair signal; the sub-power amplifier unit includes: an NMOS tube, a third PMOS tube, a second controllable switch and a third controllable switch;

[0015] The gate of the third PMOS tube is connected to the source of the third PMOS tube through the second controllable switch, the common end of the gate of the third PMOS tube connected to the second controllable switch is used to be connected to the first differential signal input end of the radio frequency signal, and the common end of the source of the third PMOS tube connected to the second controllable switch is used to be connected to the power supply output end; the drain of the third PMOS tube is connected to the drain of the NMOS tube, and the common end thereof serves as the power amplifier output end of the sub-power amplifier unit;

[0016] The gate of the NMOS tube is connected to the source of the NMOS tube through the third controllable switch, the common end of the gate of the NMOS tube connected to the third controllable switch is used to be connected to the second differential signal input end of the radio frequency signal, and the common end of the source of the NMOS tube connected to the third controllable switch is grounded.

[0017] On the other hand, the second controllable switch and the third controllable switch are both single-pole double-throw controllable switches;

[0018] The moving end of the second controllable switch is connected to the gate of the third PMOS tube, and the common end thereof is used to be connected to the first differential signal input end, and the first fixed end of the second controllable switch is used to be connected to the first bias voltage output end; the second fixed end of the second controllable switch is connected to the source of the third PMOS tube, and the common end thereof is used to be connected to the power supply output end; the control end of the second controllable switch is connected to the output end of the first control signal, and is used to control the moving end of the second controllable switch to be connected to the first fixed end or the second fixed end according to the first control signal, so as to switch the working condition of the third PMOS tube;

[0019] The moving end of the third controllable switch is connected to the drain of the NMOS tube, and its common end is used to be connected to the second differential signal input end; the first fixed end of the third controllable switch is used to be connected to the second bias voltage output end; the second fixed end of the third controllable switch is connected to the source of the NMOS tube, and its common end is grounded; the control end of the third controllable switch is connected to the output end of the second control signal, and is used to control the moving end of the third controllable switch to be connected to the first fixed end or the second fixed end according to the second control signal, so as to switch the working condition of the NMOS tube; the switch control signal includes the first control signal and the second control signal.

[0020] In another aspect, the RF power amplifier circuit further includes a first capacitor and a second capacitor;

[0021] Among them, the common end of the moving end of the second controllable switch connected to the gate of the third PMOS tube is connected to the first end of the first capacitor, and the second end of the first capacitor is used to be connected to the first differential signal input end; the common end of the moving end of the third controllable switch connected to the drain of the NMOS tube is connected to the first end of the second capacitor, and the second end of the second capacitor is used to be connected to the second differential signal input end.

[0022] In addition, the present invention also provides a control method for a radio frequency power amplifier circuit, which is applied to the radio frequency power amplifier circuit as described above, comprising:

[0023] Obtaining target output power and RF input power of the RF power amplifier circuit;

[0024] Determining a subunit output power of the subpower amplifier unit according to the RF input power and the power gain of the subpower amplifier unit;

[0025] Determine the target operating condition of the power amplifier in each of the sub-power amplifier units according to the sub-unit output power and the target output power; wherein the target operating condition is that the sum of the output powers corresponding to all power amplifiers in the working state is greater than or equal to the target output power;

[0026] According to the target working condition, a corresponding switch control signal is output to the controllable switch in each of the sub-power amplifier units.

[0027] A radio frequency power amplifier circuit provided by the present invention comprises: a preset number of sub-power amplifier units; wherein the preset number is greater than or equal to 2; each sub-power amplifier unit comprises a controllable switch and a power amplifier, and is used to control the conduction state of the controllable switch according to an input switch control signal, and switch the working state of the power amplifier, so as to use the power amplifier in the working state to amplify the power of the input radio frequency signal and output a corresponding power amplification signal; the working state includes a working state and a non-working state;

[0028] It can be seen that the present invention divides the RF power amplifier into multiple sub-amplifier units by setting a preset number of sub-amplifier units, and uses each sub-amplifier unit to provide an independent RF power amplification function. After the power output of all sub-amplifier units is synthesized, the final circuit output power of the RF power amplifier circuit can be obtained; by controlling the working condition of the power amplifier in each sub-amplifier unit through switches, the circuit output power can be conveniently adjusted, the circuit efficiency is guaranteed, and the low power consumption of the RF power amplifier is achieved. In addition, the present invention also provides a control method for an RF power amplifier circuit, which also has the above-mentioned beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0030] Figure 1 A structural block diagram of a radio frequency power amplifier circuit provided by an embodiment of the present invention;

[0031] Figure 2 A circuit diagram of another radio frequency power amplifier circuit provided by an embodiment of the present invention;

[0032] Figure 3 A circuit diagram of another radio frequency power amplifier circuit provided by an embodiment of the present invention;

[0033] Figure 4 The present invention provides a flow chart of a method for controlling a radio frequency power amplifier circuit. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] Please refer to Figure 1 , Figure 1 The structure block diagram of a radio frequency power amplifier circuit provided by an embodiment of the present invention. The circuit may include: a preset number of sub-power amplifier units 10; wherein the preset number is greater than or equal to 2;

[0036] Each sub-power amplifier unit 10 includes a controllable switch and a power amplifier, which is used to control the conduction state of the controllable switch and switch the working state of the power amplifier according to the input switch control signal, so as to use the power amplifier in the working state to amplify the power of the input radio frequency signal and output the corresponding power amplification signal; the working state includes the working state and the non-working state.

[0037] It can be understood that in the present embodiment, each sub-power amplifier unit 10 can utilize its own working power amplifier to power amplify the RF signal (such as a single-ended signal or a differential pair signal) input by the RF power amplifier circuit, and output a corresponding power amplified signal, so that the RF power amplifier circuit can utilize the power amplified signals output by all the working sub-power amplifier units 10 to output the final power amplified signal, such as synthesizing the power amplified signals output by all the sub-power amplifier units 10 and then outputting them; thereby, by controlling the working conditions of the power amplifiers in each sub-power amplifier unit 10, the output power of the RF power amplifier circuit can be adjusted, thereby avoiding the problems of efficiency deterioration and increased power consumption caused by the use of linear back-off in related technologies.

[0038] Correspondingly, the present embodiment does not limit the specific device type of the power amplifier in the sub-power amplifier unit 10 for power amplifying the input RF signal. For example, the power amplifier in the sub-power amplifier unit 10 may use a MOS tube (such as an NMOS tube and a PMOS tube), or a triode or other power amplifier devices.

[0039] Accordingly, the specific circuit structure of each sub-power amplifier unit 10 in this embodiment can be set by the designer according to practical scenarios and user needs. For example, in some embodiments, the number of power amplifiers controlled by the controllable switch in each sub-power amplifier unit 10 can be 1; for example, when the RF signal is a single-ended signal and the power amplifier uses a PMOS tube, Figure 2 As shown, each sub-power amplifier unit 10 includes a first controllable switch (S1_1 to S1_N) and a first PMOS tube (M1_1 to M1_N); wherein the gate of the first PMOS tube is used to be connected to the input end of the radio frequency signal, and the source of the first PMOS tube is used to be connected to the output end (Vcc) of the power supply; the drain of the first PMOS tube is connected to the first end of the first controllable switch, and the common end thereof serves as the power amplifier output end of the sub-power amplifier unit 10; the second end of the first controllable switch is grounded; the control end of the first controllable switch is used to be connected to the output end of the switch control signal (SW_1 to SW_N), and is used to control the conduction and cutoff of the first controllable switch according to the switch control signal, and switch the working condition of the first PMOS tube. That is to say, when the first controllable switch in the sub-power amplifier unit 10 is turned on, the first PMOS tube is in a working state, and the first PMOS tube can be used to amplify the input RF signal (UMIXEROUT) to obtain and output the corresponding power amplification signal (PA_OUT); when the second controllable switch in the sub-power amplifier unit 10 is turned on, the first PMOS tube is in a non-working state, and the sub-power amplifier unit 10 does not contribute power to the outside, nor does it have additional impact on other sub-power amplifier units 10; thereby, the power adjustment of the final power amplification signal is achieved by controlling the first controllable switches in a preset number (N) of sub-power amplifier units 10.

[0040] Correspondingly, the present embodiment does not limit the specific switch type of the first controllable switch. For example, the first controllable switch may be a MOS tube, or a triode or other controllable switches, such as Figure 2 As shown, the first controllable switch can be specifically a second PMOS tube, wherein the source of the second PMOS tube is connected to the drain of the first PMOS tube, and the common end thereof serves as the power amplifier output end of the sub-power amplifier unit 10; the drain of the second PMOS tube is grounded, and the gate of the second PMOS tube is used to be connected to the output end of the switch control signal.

[0041] In some embodiments, the number of power amplifiers controlled by the controllable switch in each sub-power amplifier unit 10 may also be greater than or equal to 2. For example, when the number of controllable switches used to control the working condition of the power amplifier in each sub-power amplifier unit 10 is 1, the conduction condition of the controllable switch can simultaneously control the working condition of all power amplifiers. For example, when the controllable switch is turned on, all power amplifiers are in a working state, and when the controllable switch is turned off, all power amplifiers are in a non-working state; or, when the controllable switch is turned on and connected to a certain power amplifier, the power amplifier is in a working state, and other power amplifiers are in a non-working state. For example, in Figure 2 In the RF power amplifier circuit shown, a PMOS tube having a gate connected to the input end of the RF signal can be further connected in series in each sub-power amplifier unit 10, so that the on and off of the first controllable switch can simultaneously control the working conditions of the two PMOS tubes serving as power amplifiers.

[0042] Correspondingly, when each sub-amplifier unit 10 includes at least two power amplifiers, the sub-amplifier unit 10 can be used to control the conduction of the controllable switch according to the input switch control signal, switch the working condition of the power amplifier, switch the working mode of the sub-amplifier unit 10, power amplify the input RF signal, and output the corresponding power amplified signal; the sub-amplifier unit 10 has different power amplifiers in different working modes; the power amplification factor of the sub-amplifier unit 10 is different in at least two working modes. For example, when the number of controllable switches used to control the working condition of the power amplifier in the sub-amplifier unit 10 is 1, the controllable switch can switch the connection with each power amplifier, switch the working mode of the sub-amplifier unit 10, and the power amplification factor of each power amplifier is different.

[0043] The number of controllable switches used to control the working condition of the power amplifier in the sub-power amplifier unit 10 can be the same as the number of the power amplifiers, so that each controllable switch can be used to control the working condition of the corresponding power amplifier. For example, when each sub-power amplifier unit 10 includes two power amplifiers, Figure 3 As shown, the RF signal input to the RF power amplifier circuit is a differential pair signal (UMIXEROUT_P and UMIXEROUT_N); the sub-power amplifier unit 10 may include: an NMOS tube (M2_1 to M2_N), a third PMOS tube (M1_1 to M1_N), a second controllable switch (S1_1 to S1_N) and a third controllable switch (S2_1 to S2_N).

[0044] Among them, the gate of the third PMOS tube is connected to the source of the third PMOS tube through the second controllable switch, the common end of the gate of the third PMOS tube connected to the second controllable switch is used to be connected to the first differential signal (UMIXEROUT_P) input end of the RF signal, and the common end of the source of the third PMOS tube connected to the second controllable switch is used to be connected to the power supply output end; the drain of the third PMOS tube is connected to the drain of the NMOS tube, and its common end serves as the power amplifier output end of the sub-amplifier unit 10; the gate of the NMOS tube is connected to the source of the NMOS tube through the third controllable switch, and the common end of the gate of the NMOS tube connected to the third controllable switch is used to be connected to the second differential signal (UMIXEROUT_N) input end of the RF signal, and the common end of the source of the NMOS tube connected to the third controllable switch is grounded.

[0045] That is to say, when the second controllable switch in the sub-power amplifier unit 10 is turned off, the third PMOS tube is in a working state, and the third PMOS tube can be used to power amplify the input first differential signal (UMIXEROUT_P); when the second controllable switch in the sub-power amplifier unit 10 is turned on, the third PMOS tube is in a non-working state; when the third controllable switch in the sub-power amplifier unit 10 is turned off, the NMOS tube is in a working state, and the NMOS tube can be used to power amplify the input second differential signal (UMIXEROUT_N); when the third controllable switch in the sub-power amplifier unit 10 is turned on, the NMOS tube is in a non-working state; the outputs of the third PMOS tube and the NMOS tube are synthesized to obtain the power amplification signal (PA_OUT) output by the sub-power amplifier unit 10; thereby, by controlling the second controllable switches and the third controllable switches in the preset number (N) of sub-power amplifier units 10, the power adjustment of the final power amplification signal of the RF power amplifier circuit is realized.

[0046] Correspondingly, the working modes of the sub-power amplifier unit 10 may include a third PMOS tube single working mode, an NMOS tube single working mode, and a third PMOS tube and NMOS tube joint working mode. The power amplification factor of the third PMOS tube and NMOS tube joint working mode may be greater than the power amplification factor of the third PMOS tube single working mode and the power amplification factor of the NMOS tube single working mode. For example, the power amplification factor of the NMOS tube single working mode may be the same as the power amplification factor of the third PMOS tube single working mode. The power amplification factor of the third PMOS tube and NMOS tube joint working mode may be twice the power amplification factor of the NMOS tube single working mode.

[0047] Correspondingly, in order to ensure that the third PMOS transistor and the NMOS transistor can work normally, when the third PMOS transistor and the NMOS transistor are in working state, the gates can be connected to corresponding bias voltages. Figure 3As shown, the second controllable switch (S1_1 to S1_N) and the third controllable switch (S2_1 to S2_N) in the sub-amplifier unit 10 can all be single-pole double-throw controllable switches; wherein the moving end of the second controllable switch is connected to the gate of the third PMOS tube, and its common end is used to be connected to the first differential signal input end, and the first fixed end of the second controllable switch is used to be connected to the first bias voltage (bias1) output end; the second fixed end of the second controllable switch is connected to the source of the third PMOS tube, and its common end is used to be connected to the power supply output end; the control end of the second controllable switch is connected to the output end of the first control signal, and is used to control the moving end of the second controllable switch to the first fixed end or The second fixed end is turned on to switch the working condition of the third PMOS tube; the moving end of the third controllable switch is connected to the drain of the NMOS tube, and its common end is used to connect to the second differential signal (bias2) input end; the first fixed end of the third controllable switch is used to connect to the second bias voltage output end; the second fixed end of the third controllable switch is connected to the source of the NMOS tube, and its common end is grounded; the control end of the third controllable switch is connected to the output end of the second control signal, and is used to control the moving end of the third controllable switch to be turned on with the first fixed end or the second fixed end according to the second control signal, so as to switch the working condition of the NMOS tube; the switch control signal input by the sub-amplifier unit 10 may include the first control signal and the second control signal.

[0048] Furthermore, in order to avoid the influence of the sub-amplifier unit 10 on the front-end circuit, such as avoiding the influence of the bias voltage of the gate connection when the third PMOS tube and the NMOS tube work on the front-end circuit, Figure 3 As shown, the sub-amplifier unit 10 also includes a first capacitor (C1_1 to C1_N) and a second capacitor (C2_1 to C2_N); wherein, the common end of the moving end of the second controllable switch connected to the gate of the third PMOS tube is connected to the first end of the first capacitor, and the second end of the first capacitor is used to be connected to the first differential signal input end; the common end of the moving end of the third controllable switch connected to the drain of the NMOS tube is connected to the first end of the second capacitor, and the second end of the second capacitor is used to be connected to the second differential signal input end.

[0049] It should be noted that the present embodiment does not limit the specific location of the RF power amplifier circuit. For example, the RF power amplifier circuit may be disposed in a wireless communication chip to conveniently adjust the RF output power.

[0050] Among them, the processor set inside or outside the RF power amplifier circuit in this embodiment can send corresponding switch control signals to each sub-amplifier unit 10 according to the power of the power amplified signal output by the RF power amplifier circuit (i.e., the target output power) to achieve the power adjustment of the power amplified signal finally output by the RF power amplifier circuit. For example, the processor can obtain the target output power and RF input power of the RF power amplifier circuit; determine the sub-unit output power of the sub-amplifier unit 10 according to the RF input power and the power amplification factor of the sub-amplifier unit 10; determine the target working condition of the power amplifier in each sub-amplifier unit 10 according to the sub-unit output power and the target output power; wherein the target working condition is that the sum of the output powers corresponding to all power amplifiers in the working state is greater than or equal to the target output power; according to the target working condition, output the corresponding switch control signal to the controllable switch in each sub-amplifier unit 10.

[0051] In this embodiment, the embodiment of the present invention divides the RF power amplifier into multiple sub-power amplifier units 10 by setting a preset number of sub-power amplifier units 10, and each sub-power amplifier unit 10 is used to provide an independent RF power amplification function. The power output of all sub-power amplifier units 10 is synthesized to obtain the final circuit output power of the RF power amplifier circuit; by controlling the working condition of the power amplifier in each sub-power amplifier unit 10 through switches, the circuit output power can be conveniently adjusted, thereby ensuring circuit efficiency and achieving low power consumption of the RF power amplifier.

[0052] Corresponding to the above circuit embodiment, an embodiment of the present invention further provides a control method for a radio frequency power amplifier circuit. The radio frequency power amplifier circuit described below and the control method for a radio frequency power amplifier circuit described above can refer to each other.

[0053] Please refer to Figure 4 , Figure 4 This is a flow chart of a control method of a radio frequency power amplifier circuit provided by an embodiment of the present invention. The method is applied to the radio frequency power amplifier circuit provided by the above embodiment and may include:

[0054] Step 101: Obtain target output power and RF input power of a RF power amplifier circuit.

[0055] The RF input power in this embodiment may be the power of the RF signal input to the RF power amplifier circuit, that is, the power of the RF signal that needs to be amplified by the RF power amplifier circuit. The target output power in this embodiment may be the target power of the power amplified signal output by the RF power amplifier circuit corresponding to the RF input power, that is, the power that the RF signal needs to reach after passing through the RF power amplifier circuit.

[0056] It should be noted that the control method of the RF power amplifier circuit provided in this embodiment can be applied to a processor connected to the controllable switches of each sub-power amplifier unit in the RF power amplifier circuit, such as a processor in the chip where the RF power amplifier circuit is located (such as a wireless communication chip).

[0057] Step 102: Determine the sub-unit output power of the sub-power amplifier unit according to the RF input power and the power gain factor of the sub-power amplifier unit.

[0058] In this embodiment, the processor can determine the power of the power amplified signal output by each sub-power amplifier unit when the sub-power amplifier unit performs power amplification on the input RF signal (i.e., the sub-unit output power) according to the RF input power and the power amplification factor of each sub-power amplifier unit in the RF power amplifier circuit. For example, when each sub-power amplifier unit includes multiple working modes, the processor can determine the sub-unit output power of the sub-power amplifier unit in each working mode according to the RF input power and the power amplification factor of the sub-power amplifier unit in each working mode.

[0059] Step 103: Determine the target operating condition of the power amplifier in each sub-power amplifier unit according to the sub-unit output power and the target output power; wherein the target operating condition is that the sum of the output powers corresponding to all power amplifiers in the working state is greater than or equal to the target output power.

[0060] It can be understood that the target working condition of the power amplifier in this step can be the working condition (such as working state or non-working state) to which the power amplifier needs to be adjusted. In this step, the processor can determine the target working condition of each power amplifier in each sub-amplifier unit according to the sub-unit output power corresponding to the RF input power and the target output power, so that the sum of the output powers corresponding to all power amplifiers in the working state is greater than or equal to the target output power, so that after adjusting the working conditions of each power amplifier in each sub-amplifier unit in the RF power amplification circuit according to the target working condition, the power of the power amplification signal output by the RF power amplification circuit can be greater than or equal to the target output power, meeting the power requirement of the RF output.

[0061] Correspondingly, the specific manner in which the processor determines the target working condition of the power amplifier in each sub-amplifier unit according to the sub-unit output power and the target output power in this step can be set by the designer according to the practical scenario and user needs. For example, in this step, the target working condition of the power amplifier in each sub-amplifier unit can be determined according to the sub-unit output power and the target output power according to the minimum sub-amplifier unit startup rule; that is, on the basis of ensuring that the sum of the output powers corresponding to all power amplifiers in the working state of the target working condition is greater than or equal to the target output power, the number of sub-amplifier units started is as small as possible, such as all or most of the sub-amplifier units started can adopt the working mode of the maximum power gain. In this step, the target working condition of the power amplifier in each sub-amplifier unit can also be determined according to the sub-unit output power and the target output power according to the maximum sub-amplifier unit startup rule; that is, on the basis of ensuring that the sum of the output powers corresponding to all power amplifiers in the working state of the target working condition is greater than or equal to the target output power, the number of sub-amplifier units started is as large as possible, such as all sub-amplifier units started can adopt the working mode of the minimum power gain. This embodiment does not impose any restrictions on this.

[0062] Correspondingly, in some embodiments, the target working condition is that the sum of the output powers corresponding to all power amplifiers in the working state may be greater than the target output power, and less than the sum of the target output power and the preset power.

[0063] Step 104: Outputting corresponding switch control signals to the controllable switches in each sub-power amplifier unit according to the target working condition.

[0064] Among them, in this step, the processor can output a corresponding switch control signal to the controllable switch in each sub-power amplifier unit according to the determined target operating conditions of each power amplifier in each sub-power amplifier unit, so as to adjust the operating conditions of each power amplifier in each sub-power amplifier unit to their corresponding target operating conditions, so that the power of the power amplification signal finally output by the RF power amplifier circuit can meet the target output power requirement.

[0065] In this embodiment, the present invention divides the RF power amplifier into multiple sub-amplifier units by setting a preset number of sub-amplifier units, and utilizes each sub-amplifier unit to provide an independent RF power amplification function. The power output by all the sub-amplifier units is synthesized to obtain the final circuit output power of the RF power amplifier circuit; by outputting a corresponding switch control signal to the controllable switch in each sub-amplifier unit, the working condition of the power amplifier in each sub-amplifier unit can be controlled, and the circuit output power can be conveniently adjusted to meet the use requirements, thereby ensuring circuit efficiency and achieving low power consumption of the RF power amplifier.

[0066] Corresponding to the above method embodiment, an embodiment of the present invention further provides a computer-readable storage medium. The computer-readable storage medium described below and the control method of the radio frequency power amplifier circuit described above can refer to each other.

[0067] A computer-readable storage medium stores a computer program, which, when executed by a processor, implements the steps of the control method of the radio frequency power amplifier circuit of the above method embodiment.

[0068] The computer-readable storage medium may be a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, or any other readable storage medium that can store program codes.

[0069] Corresponding to the above circuit embodiment, an embodiment of the present invention further provides a wireless communication chip. The wireless communication chip described below and the radio frequency power amplifier circuit described above can refer to each other.

[0070] A wireless communication chip includes a radio frequency power amplifier circuit as provided for implementing the above circuit embodiment.

[0071] The various embodiments in the specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other. As for the method, computer-readable storage medium, and wireless communication chip disclosed in the embodiment, since they correspond to the circuit disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part description.

[0072] The above is a detailed introduction to a radio frequency power amplifier circuit and a control method thereof provided by the present invention. This article uses specific examples to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also fall within the scope of protection of the present invention.

Claims

1. A radio frequency power amplifier circuit, characterized in that: include: A preset number of sub-power amplifier units; wherein the preset number is greater than or equal to 2; Each of the sub-power amplifier units includes a controllable switch and at least two power amplifiers. The sub-power amplifier unit is used to control the conduction of the controllable switch according to the input switch control signal, switch the working condition of the power amplifier, so as to switch the working mode of the sub-power amplifier unit, power amplify the input radio frequency signal, and output a corresponding power amplification signal; the working condition includes a working state and a non-working state; the power amplifier in the working state of the sub-power amplifier unit is different in different working modes; the power amplification factor of the sub-power amplifier unit in at least two working modes is different; The radio frequency signal is a differential pair signal; the sub-power amplifier unit includes: an NMOS tube, a third PMOS tube, a second controllable switch and a third controllable switch; The gate of the third PMOS tube is connected to the source of the third PMOS tube through the second controllable switch, the common end of the gate of the third PMOS tube connected to the second controllable switch is used to be connected to the first differential signal input end of the radio frequency signal, and the common end of the source of the third PMOS tube connected to the second controllable switch is used to be connected to the power supply output end; the drain of the third PMOS tube is connected to the drain of the NMOS tube, and the common end thereof serves as the power amplifier output end of the sub-power amplifier unit; The gate of the NMOS tube is connected to the source of the NMOS tube through the third controllable switch, the common end of the gate of the NMOS tube connected to the third controllable switch is used to be connected to the second differential signal input end of the radio frequency signal, and the common end of the source of the NMOS tube connected to the third controllable switch is grounded.

2. The radio frequency power amplifier circuit according to claim 1, characterized in that: The second controllable switch and the third controllable switch are both single-pole double-throw controllable switches; The moving end of the second controllable switch is connected to the gate of the third PMOS tube, and the common end thereof is used to be connected to the first differential signal input end, and the first fixed end of the second controllable switch is used to be connected to the first bias voltage output end; the second fixed end of the second controllable switch is connected to the source of the third PMOS tube, and the common end thereof is used to be connected to the power supply output end; the control end of the second controllable switch is connected to the output end of the first control signal, and is used to control the moving end of the second controllable switch to be connected to the first fixed end or the second fixed end according to the first control signal, so as to switch the working condition of the third PMOS tube; The moving end of the third controllable switch is connected to the gate of the NMOS tube, and its common end is used to be connected to the second differential signal input end; the first fixed end of the third controllable switch is used to be connected to the second bias voltage output end; the second fixed end of the third controllable switch is connected to the source of the NMOS tube, and its common end is grounded; the control end of the third controllable switch is connected to the output end of the second control signal, and is used to control the moving end of the third controllable switch to be connected to the first fixed end or the second fixed end according to the second control signal, so as to switch the working condition of the NMOS tube; the switch control signal includes the first control signal and the second control signal.

3. The radio frequency power amplifier circuit according to claim 2, characterized in that: The radio frequency power amplification circuit further includes a first capacitor and a second capacitor; Among them, the common end of the moving end of the second controllable switch connected to the gate of the third PMOS tube is connected to the first end of the first capacitor, and the second end of the first capacitor is used to be connected to the first differential signal input end; the common end of the moving end of the third controllable switch connected to the gate of the NMOS tube is connected to the first end of the second capacitor, and the second end of the second capacitor is used to be connected to the second differential signal input end.

4. A control method for a radio frequency power amplifier circuit, characterized in that: The radio frequency power amplifier circuit as claimed in any one of claims 1 to 3 comprises: Obtaining target output power and RF input power of the RF power amplifier circuit; Determining a subunit output power of the subpower amplifier unit according to the RF input power and the power gain of the subpower amplifier unit; Determine the target operating condition of the power amplifier in each of the sub-power amplifier units according to the sub-unit output power and the target output power; wherein the target operating condition is that the sum of the output powers corresponding to all power amplifiers in the working state is greater than or equal to the target output power; According to the target working condition, a corresponding switch control signal is output to the controllable switch in each of the sub-power amplifier units.

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