Gate Insulation Base, Its Usage Method, Gate Assembly, and Semiconductor Device

Abstract

The present disclosure relates to a gate insulating base, a method for using the same, a gate assembly, and a semiconductor device. The gate insulating base includes an insulating base and a spoke guiding and assembling channel. The insulating base includes a base and an inner wall and an outer wall provided on the top surface of the base. The spoke guiding and assembling channel includes a spoke entry notch, a spoke screwing slot, and a rotation guiding slot. The spoke entry notch extends upward and outward from the bottom surface of the base. The spoke screwing slot extends downward and outward from the top surface of the outer wall. The orthographic projection of the spoke screwing slot and the spoke entry notch in the vertical direction has a gap. The rotation guiding slot communicates between the spoke entry notch and the spoke screwing slot. The present disclosure optimizes the structural cooperation between the gate insulating base and the gate lead-out spoke, can simplify the assembly process of the gate assembly, and effectively improves the connection stability and reliability of the gate assembly, thereby improving the performance and reliability of the semiconductor device.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor devices, and particularly to a gate insulating seat, a method for using the same, a gate assembly, and a semiconductor device. Background Art

[0002] As a fully controlled power device with the largest single-tube capacity, the Integrated Gate-Commutated Thyristor (IGCT) device can be widely applied to fields such as DC power transmission, smart grid, power converters, and power inverters due to its superior performance such as large capacity, fast switching speed, low switching loss, and high tolerance to current change rate (di / dt), and has broad prospects and huge development space.

[0003] However, the IGCT device mainly consists of a GCT element and a drive circuit board connected to its lead electrodes. Among them, the gate insulating seat is the core component of the gate assembly in the GCT element, and the design of other related components needs to be carried out around the gate insulating seat. Therefore, the structure and performance of the gate insulating seat are crucial for the entire IGCT device. Summary of the Invention

[0004] Based on this, some embodiments of the present disclosure provide a gate insulating seat, a method for using the same, a gate assembly, and a semiconductor device, which can optimize the structural cooperation between the gate insulating seat and the gate lead spoke while being compatible with the packaging structure of the integrated gate-commutated thyristor device, thereby simplifying the assembly process of the gate assembly, effectively improving the connection stability and reliability of the gate assembly, and further improving the performance and reliability of the semiconductor device.

[0005] To achieve the above object, in a first aspect, some embodiments of the present disclosure provide a gate insulating seat, including: an insulating base and a plurality of spoke guiding and assembling channels provided on the insulating base. The insulating base includes: a base and an inner wall and an outer wall provided on the top surface of the base. The spoke guiding and assembling channels include: a spoke entry notch, a spoke screwing slot, and a rotation guiding slot; the spoke entry notch extends upward and outward from the bottom surface of the base; the spoke screwing slot extends downward and outward from the top surface of the outer wall; the spoke screwing slot and the spoke entry notch have a gap in the positive projection along the vertical direction; the rotation guiding slot communicates between the spoke entry notch and the spoke screwing slot.

[0006] In some embodiments of the present disclosure, the surface of the rotation guiding slot close to the bottom surface of the base includes an inclined guiding surface; wherein, an included angle is formed between the inclined guiding surface and the bottom surface of the base.

[0007] In some embodiments of the present disclosure, the angle between the inclined guide surface and the bottom surface of the base toward the spoke screw-on groove is no more than 30°.

[0008] In some embodiments of the present disclosure, the bottom surface of the spoke screw-on slot is lower than the top surface of the base. The upper edge of the inclined guide surface is flush with the top surface of the base and connected to the corresponding side wall of the spoke screw-on slot through a portion of the top surface of the base.

[0009] In some embodiments of the present disclosure, the distance from the bottom surface of the spoke screw-on slot to the bottom surface of the base is not less than 0.5 mm.

[0010] In some embodiments of the present disclosure, the groove depth of the spoke screw-on slot along the vertical direction is not greater than the thickness of the gate lead spoke along the vertical direction. The width of the spoke entry notch and the spoke screw-on slot along the horizontal direction are not less than the width of the gate lead spoke along the horizontal direction.

[0011] In a second aspect, some embodiments of the present disclosure further provide a gate assembly, comprising: a gate insulating seat as described in some of the above embodiments, and a gate connection ring. The gate connection ring comprises: an annular ring and a plurality of contact pieces. The annular ring is located on the top surface of the base between the inner wall and the outer wall. A plurality of contact pieces are distributed at intervals around the annular ring and are respectively located on the bottom surface of the groove corresponding to the spoke screw-on groove.

[0012] In some embodiments of the present disclosure, the top surface of the contact piece is an arc surface, and the center of curvature of the arc surface is located on a side of the base away from the spoke screw-on groove.

[0013] In some embodiments of the present disclosure, the gate connecting ring and the gate insulating seat are integrally formed.

[0014] In a third aspect, some embodiments of the present disclosure further provide a method for using a gate insulating seat, comprising the following steps.

[0015] A gate insulating seat as described in some embodiments above is provided.

[0016] A plurality of gate lead-out spokes are installed one by one into the spoke entry notches of the gate insulating seat.

[0017] The gate insulating seat is rotated to allow the gate lead spoke to pass through the rotation guide groove and engage in the spoke rotation engagement groove.

[0018] In a fourth aspect, some embodiments of the present disclosure further provide a semiconductor device, comprising a gate insulating seat or a gate assembly as described in some of the above embodiments.

[0019] The embodiments of the present disclosure may or at least have the following advantages:

[0020] In the embodiments of the present disclosure, a plurality of spoke guiding assembly channels are provided on the insulating base of the gate insulating seat. The spokes in each spoke guiding assembly channel can effectively guide the assembly path of the gate lead spokes through the notches, rotation guiding grooves and spoke screwing slots, and ensure that the gate lead spokes are clamped into the spoke screwing slots. Therefore, while being compatible with the integrated gate commutated thyristor device packaging structure, the structural cooperation between the gate insulating seat and the gate lead spokes can be optimized, so as to simplify the assembly process of the gate assembly, effectively improve the connection stability and reliability of the gate assembly, and further facilitate the improvement of the performance and reliability of semiconductor devices.

[0021] The details of one or more embodiments of the present disclosure are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the present disclosure will become apparent from the specification, the drawings, and the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or in the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0023] Figure 1 Schematic exploded view of a GCT element provided in some embodiments;

[0024] Figure 2 Schematic cross-sectional view of a GCT element provided in some embodiments;

[0025] Figure 3 Schematic cross-sectional view of a part of a GCT element provided in some embodiments;

[0026] Figure 4 Schematic structural view of a gate insulating seat provided in some embodiments;

[0027] Figure 5 For Figure 4 A side view of the shown gate insulating seat;

[0028] Figure 6 Schematic flow chart of a method for using a gate insulating seat provided in some embodiments;

[0029] Figure 7 Schematic structural view of a gate connection ring provided in some embodiments;

[0030] Figure 8 For Figure 7Schematic diagram of the structure of a contact piece in the shown gate connection ring;

[0031] Figure 9 Schematic diagram of the structure of another gate insulating seat provided in some embodiments.

[0032] Explanation of reference numerals:

[0033] 1 - Gate spoke sleeve, 11 - Tube shell base, 12 - Gate lead spoke, 13 - Disc spring assembly, 14 - Lining tape, 2 - Gate assembly, 21 - Gate insulating seat, 210 - Insulating base, 211 - Base, 212 - Inner wall, 213 - Outer wall, G - Spoke guiding assembly channel, G1 - Spoke entry notch, G2 - Spoke screwing slot, G3 - Rotation guiding slot, 22 - Gate connection ring, 221 - Ring, 222 - Contact piece, 3 - Cathode, 31 - Inner cathode, 32 - Outer cathode, 4 - GCT chip, 5 - Anode, 6 - Tube shell upper cover. Detailed implementation manners

[0034] For ease of understanding the present disclosure, the present disclosure will be described more comprehensively below with reference to the relevant drawings. Preferred embodiments of the present disclosure are shown in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of the present disclosure more thorough and comprehensive.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this disclosure belongs. The terms used in the description of the present disclosure herein are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure.

[0036] It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer, or part discussed below may be referred to as the second element, component, region, layer, or part.

[0037] It should be understood that when an element is considered to be "connected" to another element, it may be directly connected to the other element or connected to the other element through an intermediate element. In addition, in the following embodiments, "connection", if there is a transfer of electrical signals or data between the connected objects, should be understood as "electrical connection", "communication connection", etc.

[0038] It should be understood that the singular forms "a", "an", and "the" may also include the plural forms unless the context clearly dictates otherwise. It should also be understood that terms such as "comprising" or "having" specify the presence of the stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, as used herein, the term "and / or" includes any and all combinations of the associated listed items.

[0039] Embodiments of the invention are described herein with reference to cross-sectional views that are schematic illustrations of ideal embodiments (and intermediate structures) of the present disclosure, and variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are to be expected. Embodiments of the present disclosure should not be limited to the specific shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing techniques. Thus, the regions shown in the figures are substantially schematic, and their shapes do not represent the actual shapes of the regions of the device and do not limit the scope of the present disclosure.

[0040] Currently, the IGCT device mainly consists of a GCT element and a drive circuit board connected to its lead electrodes, where the GCT element is the core component of the IGCT device.

[0041] In some embodiments of the present disclosure, refer to Figure 1 、 Figure 2 and Figure 3 , the GCT element mainly consists of a semiconductor chip (i.e., GCT chip 4) and a package housing. The package housing includes, for example, a gate spoke sleeve 1, a gate assembly 2, a cathode plate 3, an anode plate 5, and a housing top cover 6, etc. Exemplarily, the gate spoke sleeve 1 includes a housing base 11 and a plurality of gate lead spokes 12, disc spring assemblies 13 distributed in the grooves of the housing base 11, and a lining strip 14 provided on the inner side wall of the housing base 11. Optionally, an insulating sleeve (not shown in the figure) may be sleeved on the outer side wall of the gate lead spoke 12. Exemplarily, the cathode plate 3 may include a separately provided inner cathode plate 31 and an outer cathode plate 32.

[0042] In some embodiments of the present disclosure, the gate assembly 2 includes a gate insulating seat and a gate lead ring, etc. The gate insulating seat is the core component in the gate assembly 2, and the design of other related components needs to be centered around the gate insulating seat. Therefore, the structure and performance of the gate insulating seat are crucial for the entire IGCT device. Here, it can be understood that the gate insulating seat is mainly used to ensure electrical insulation between the gate of the GCT chip 4 and the cathode plate 3. Therefore, in the structure of the package housing, the gate insulating seat must effectively isolate the electrical contact between the housing base 11, the cathode plate 3, and the gate lead ring in the gate assembly 2.

[0043] However, in the related art, when installing the gate assembly, it is usually necessary to lift the gate lead spoke upward to install the gate insulating seat into the groove of the shell base, and then restore the gate lead spoke to the horizontal position. In this way, it is easy to reduce the assembly efficiency and break the gate lead spoke after multiple bends, resulting in device failure. Moreover, for the gate insulating seat adopting the foregoing assembly process in the related art, there is also a problem of poor positioning firmness in the groove of the shell base, so that the position of the cathode plate cooperating with it cannot be fixed. Once the cathode plate has a small amount of crosstalk, it may cause the gate insulating seat to be extruded and deformed, leading to a short circuit between the gate and the cathode plate of the device.

[0044] Based on this, the embodiments of the present disclosure provide a gate insulating seat, its use method, and a gate assembly, which can optimize the structural cooperation between the gate insulating seat and the gate lead spoke while being compatible with the integrated gate commutated thyristor device packaging structure, that is, consider the installation cooperation problem between the gate insulating seat and the gate lead spoke, so as to simplify the assembly process of the gate assembly, effectively improve the connection stability and reliability of the gate assembly, and further facilitate the improvement of the performance and reliability of semiconductor devices. The gate insulating seat provided by the embodiments of the present disclosure is of great significance for optimizing the assembly process of the gate assembly in GCT components and improving the device packaging qualification rate.

[0045] Please refer to Figure 4 and Figure 5 In some embodiments of the present disclosure, the gate assembly 2 includes a gate insulating seat 21. The gate insulating seat 21 includes: an insulating base 210 and a plurality of spoke guiding and assembling channels G provided on the insulating base 210.

[0046] Exemplarily, the number of the spoke guiding and assembling channels G is the same as the number of the gate lead spokes 12.

[0047] Exemplarily, the spoke guiding and assembling channels G are arranged along the circumferential direction of the insulating base 210 and match the arrangement positions of the gate lead spokes 12. For example, the spoke guiding and assembling channels G can be evenly arranged along the circumferential direction of the insulating base 210.

[0048] Please continue to refer to Figure 4 and Figure 5 In some embodiments of the present disclosure, the insulating base 210 includes: a base 211 and an inner wall 212 and an outer wall 213 provided on the top surface of the base 211.

[0049] Optionally, the base 211 includes but is not limited to an annular seat; the inner wall 212 and the outer wall 213 are respectively located at the inner and outer edges on the same side of the base 211.

[0050] Optionally, the shape of the orthographic projection of the annular seat along its axial direction includes: a circular ring, a square ring, a special-shaped ring, etc.

[0051] Optionally, at least one step may be provided on the inner surface of the inner wall 212 and / or the outer surface of the outer wall 213, so that the inner cathode sheet 31 disposed in cooperation with the gate insulating seat 21 can be placed on the inner surface step of the inner wall 212, and the outer cathode sheet 32 disposed in cooperation with the gate insulating seat 21 can be placed on the outer surface step of the outer wall 213, thereby facilitating reducing the gap between the gate insulating seat 21 and the inner cathode sheet 31 and / or between the gate insulating seat 21 and the outer cathode sheet 32 to define the lateral deflection of the cathode sheet 3.

[0052] Please continue to refer to Figure 4 and Figure 5 , in some embodiments of the present disclosure, the spoke guiding assembly channel G includes: a spoke entry notch G1, a spoke screwing slot G2, and a rotation guiding slot G3. The spoke entry notch G1 extends upward and outward from the bottom surface of the base 211. The spoke screwing slot G2 extends downward and outward from the top surface of the outer wall 213. The vertical projection of the spoke screwing slot G2 and the spoke entry notch G1 has a gap. The rotation guiding slot G3 communicates between the spoke entry notch G1 and the spoke screwing slot G2. The rotation guiding slot G3 is used to guide the movement path of the gate lead spoke 12 after it is inserted into the spoke entry notch G1, so that the gate lead spoke 12 is engaged into the spoke screwing slot G2.

[0053] Here, the spoke entry notch G1 extends upward and outward from the bottom surface of the base 211 means that: the spoke entry notch G1 has both a groove extending from the bottom surface of the base 211 towards the outer wall 213 and an opening towards the outer side wall of the base 211. Among them, the depth of the groove of the spoke entry notch G1 extending from the bottom surface of the base 211 towards the outer wall 213 in the vertical direction can be selected and set according to requirements, and the embodiments of the present disclosure do not limit this. Optionally, the depth of the groove of the spoke entry notch G1 extending from the bottom surface of the base 211 towards the outer wall 213 in the vertical direction is less than the thickness of the base 211 in its axial direction. Optionally, the depth of the groove of the spoke entry notch G1 extending from the bottom surface of the base 211 towards the outer wall 213 in the vertical direction is not less than the thickness of the gate lead spoke 12 in the vertical direction.

[0054] Here, the spoke screwing slot G2 extends downward and outward from the top surface of the outer wall 213, which means that the spoke screwing slot G2 has both a groove extending from the top surface of the outer wall 213 towards the base 211 and an opening towards the outer side wall of the outer wall 213. Among them, the depth of the groove of the spoke screwing slot G2 extending from the top surface of the outer wall 213 towards the base 211 in the vertical direction can be set according to requirements. And, the ability of the spoke screwing slot G2 to engage with the gate lead spoke 12 means that after guiding and assembling the gate lead spoke 12 into the spoke screwing slot G2, the gate lead spoke 12 can be effectively positioned by the spoke screwing slot G2, thereby preventing relative movement between the gate lead spoke 12 and the gate insulating seat 21.

[0055] Optionally, the base 211 is an annular seat, and the positive projections of the spoke screwing slot G2 and the spoke entry notch G1 along the circumferential direction of the base 211 (i.e., the horizontal direction extending along the edge of the base) overlap. In other words, there may be a part at the same horizontal height in the vertical extension part of the spoke screwing slot G2 and the vertical extension part of the spoke entry notch G1. In this way, it is beneficial to save space and make the gate insulating seat thinner and lighter.

[0056] The structure of the gate insulating seat provided by the embodiments of the present disclosure is as described above. Correspondingly, some embodiments of the present disclosure also provide a method for using the gate insulating seat to achieve the assembly of the above-mentioned gate insulating seat.

[0057] Please refer to Figure 6 , in some embodiments of the present disclosure, the method for using the gate insulating seat includes the following steps S100 to S300.

[0058] S100, provide a gate insulating seat.

[0059] S200, respectively install a plurality of gate lead spokes into the spoke entry notches of the gate insulating seat.

[0060] S300, rotate the gate insulating seat so that the gate lead spokes are engaged into the spoke screwing slots through the rotation guiding grooves.

[0061] As can be seen, in the embodiments of the present disclosure, by optimizing the structure of the gate insulating seat 21, multiple bends (including installation, disassembly, and reassembly, etc.) of the gate lead spoke 12 can be avoided during the assembly process of the GCT element. Moreover, in the embodiments of the present disclosure, through the design of the spoke guiding assembly channel G, the gate insulating seat 21 can be directly installed in place without any adjustment to the gate lead spoke 12, greatly simplifying the assembly process and being conducive to improving the assembly efficiency. Further, in the embodiments of the present disclosure, after the gate insulating seat 21 is installed in place, the gate lead spoke 12 can naturally exert a downward pressure on the gate insulating seat 21 and at the same time is laterally limited by the spoke screwing slot G2 to ensure the firm installation of the gate insulating seat 21, thereby effectively avoiding the short circuit between the gate and the cathode plate of the device caused by the shaking and extrusion deformation of the gate insulating seat 21.

[0062] As described above, in the embodiments of the present disclosure, the structure of the gate insulating seat 2 is simple. By providing a plurality of spoke guiding assembly channels G on the insulating base 210 of the gate insulating seat 21, the assembly path of the gate lead spoke 12 can be effectively guided through the spokes in each spoke guiding assembly channel G into the notch G1, the rotation guiding groove G3, and the spoke screwing slot G2, and it is ensured that the gate lead spoke 12 is engaged into the spoke screwing slot G2, so that while being compatible with the integrated gate commutated thyristor device packaging structure, the structural cooperation between the gate insulating seat 21 and the gate lead spoke 12 can be optimized to simplify the assembly process of the gate assembly 2 and effectively improve the connection stability and reliability of the gate assembly 2.

[0063] It is worth mentioning that in some embodiments of the present disclosure, please continue to refer to Figure 4 and Figure 5 , the surface of the rotation guiding groove G3 close to the bottom surface of the base 211 includes an inclined guiding surface Sa; wherein, there is an included angle α between the inclined guiding surface Sa and the bottom surface of the base 211. Exemplarily, the included angle α between the inclined guiding surface Sa and the bottom surface of the base 211 towards the spoke screwing slot G2 is not greater than 30°. For example, the included angle α between the inclined guiding surface Sa and the bottom surface of the base 211 towards the spoke screwing slot G2 can be 10°, 15°, 20°, 25°, or 30°. Thus, the rotation guiding groove G3 is formed based on the aforementioned inclined guiding surface Sa, with a simple structure, and can provide path guidance for the gate lead spoke 12 to accurately fall into the spoke screwing slot G2 through the inclined guiding surface Sa, avoiding the assembly action of manually lifting and dropping the gate lead spoke 12, thereby further simplifying the structure of the gate insulating seat 21 and its assembly process.

[0064] In some embodiments of the present disclosure, please continue to refer to Figure 4 and Figure 5, the bottom surface of the spoke screwing slot G2 is lower than the top surface of the base 211. The upper edge of the inclined guide surface Sa corresponding to the rotation guide slot G3 can be flush with the top surface of the base 211 and connect to the corresponding side wall of the spoke screwing slot G2 through a part of the top surface of the base 211. In this way, an equivalent planar step is formed between the side wall of the spoke screwing slot G2 close to the spoke entry notch G1 and the inclined guide surface Sa, which is convenient for laterally limiting the gate lead spoke 12 after the gate lead spoke 12 is engaged into the spoke screwing slot G2.

[0065] In some embodiments of the present disclosure, please continue to refer to Figure 4 and Figure 5 , the distance from the bottom surface of the spoke screwing slot G2 to the bottom surface of the base 211 is not less than 0.5 mm. For example, the distance from the bottom surface of the spoke screwing slot G2 to the bottom surface of the base 211 can be 0.5 mm, 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, etc. In this way, it is beneficial to ensure the electrical insulation between the gate lead spoke 12 and the bottom surface of the cathode plate. In addition, in order to reduce the distance between the gate lead spoke 12 and the bottom surface of the cathode plate to reduce the parasitic inductance between the gate and the cathode, the distance from the bottom surface of the spoke screwing slot G2 to the bottom surface of the base 211 should not be too large and can be selected according to requirements.

[0066] In some embodiments of the present disclosure, please continue to refer to Figure 4 and Figure 5 , the slot depth of the spoke screwing slot G2 in the vertical direction is not greater than the thickness of the gate lead spoke 12 in the vertical direction. In this way, it is beneficial to ensure that the gate lead spoke 12 can still make good contact with the gate lead ring after being engaged into the spoke screwing slot G2.

[0067] In some embodiments of the present disclosure, please continue to refer to Figure 4 and Figure 5 , the widths of the spoke entry notch G1 and the spoke screwing slot G2 in the horizontal direction are both not less than the width of the gate lead spoke 12 in the horizontal direction. In this way, it is beneficial to ensure that the gate lead spoke 12 can be smoothly loaded from the spoke entry notch G1 and simultaneously be smoothly engaged into the spoke screwing slot G2.

[0068] Optionally, the dimensional difference between the width of the spoke screwing slot G2 in the horizontal direction and the width of the gate lead spoke 12 in the horizontal direction meets the lateral limiting requirements of the spoke screwing slot G2 for the gate lead spoke 12. For example, the aforementioned difference is not greater than 0.2 mm.

[0069] It should be added that, in some embodiments of the present disclosure, the gate insulating seat 21 can be prepared from an organic material that is resistant to high temperatures and high voltages. Optionally, the spoke guiding assembly channel G is formed by forming a groove or an opening in the insulating base 210, and the base 211, the inner wall 212, and the outer wall 213 in the insulating base 210 can be integrally formed. Therefore, it is sufficient that the insulating base 210 is prepared from an organic insulating material that is resistant to high temperatures and high voltages.

[0070] Exemplarily, the material of the insulating base 210 includes insulating materials such as polyimide resin (PI), polyphenylene sulfide resin (PPS), or polyether ether ketone resin (PEEK).

[0071] Exemplarily, glass fibers are also doped in the material of the insulating base 210 to effectively improve the mechanical toughness of the insulating base 210. Here, the doping degree of the glass fibers can be set according to requirements, and the embodiments of the present disclosure do not limit this.

[0072] Please refer to Figure 4 、 Figure 5 、 Figure 7 and Figure 8 Understand that some embodiments of the present disclosure also provide a gate assembly 2, including: the gate insulating seat 21 as described in the above embodiments, and a gate connection ring 22. The gate connection ring 22 is used for pressure connection with the gate lead spokes 12 to achieve electrical connection of all the gate lead spokes 12, which is beneficial to improving the current sharing characteristics of the device gate.

[0073] Exemplarily, the gate connection ring 22 includes: an annular ring 221 and a plurality of contact pieces 222. The annular ring 221 is located on the top surface of the base 211 between the inner wall 212 and the outer wall 213. The plurality of contact pieces 222 are spaced apart and distributed on the circumferential side of the annular ring 221 and are respectively located on the bottom surface of the corresponding spoke screwing slot G2.

[0074] Exemplarily, the base 211 is an annular seat, and the shape of the annular ring 221 is set to match the shape of the base 211.

[0075] Exemplarily, the contact piece 222 includes but is not limited to a metal sheet, as long as it has a good electrical contact function.

[0076] Exemplarily, the annular ring 221 and the contact pieces 222 in the gate connection ring 22 can be die-cast, for example, they can be die-cast from a metal material with excellent electrical conductivity and thermal conductivity, and the metal material includes but is not limited to copper or gold, etc.

[0077] In some embodiments of the present disclosure, please refer to Figure 8, the top surface of the contact piece 222 in the gate connection ring 22 is an arc surface. The center of curvature R of the arc surface is located on the side of the base 211 away from the spoke screwing slot G2. The aforementioned arc surface of the contact piece 222 can make the gate lead spoke 12 receive an upward preloading force, so as to further ensure the reliable connection between the gate lead spoke 12 and the gate lead ring, thereby facilitating the improvement of the connection reliability of the device gate. Moreover, the distance from the highest point of the arc surface to the bottom surface of the spoke screwing slot G2 is not greater than the target value, so as to ensure that the contact piece 222 has a certain elasticity without affecting the screwing installation of the gate lead spoke 12. The aforementioned target value can be selected and set according to requirements, for example, it can be 0.05 mm or 0.1 mm, etc.

[0078] In some embodiments of the present disclosure, please refer to Figure 9 , the gate connection ring 22 and the gate insulating seat 21 are integrally formed. For example, the gate insulating seat 21 is formed by an injection molding process, so that the gate connection ring 22 can be pre-embedded when the gate insulating seat 21 is injection-molded, thereby realizing the integral formation of the gate connection ring 22 and the gate insulating seat 21. Thus, the gate connection ring 22 can also be equivalently regarded as a component of the gate insulating seat 21.

[0079] It should be added that, in some embodiments of the present disclosure, the gate assembly 2 may further include other components, such as gaskets, elastic supports, and gate lead rings, etc. The embodiments of the present disclosure do not limit this.

[0080] As above, matching the different structures of the gate insulating seat 21 and the gate connection ring 22 in the gate assembly 2, the embodiments of the present disclosure also provide some possible assembly methods for the gate assembly to detail the assembly process of the aforementioned gate assembly in the GCT element, but this content does not limit the structure of the GCT element in the embodiments of the present disclosure, that is: the GCT element can also have more embodiments.

[0081] In some embodiments, the gate insulating seat 21 and the gate connection ring 22 are of a split structure. The annular ring 221 of the gate connection ring 22 can be embedded between the inner wall 212 and the outer wall 213 of the gate insulating seat 21, and its contact piece 222 can fall into the spoke screwing slot G2 (i.e., the screwing position of the gate lead spoke 12). Correspondingly, the assembly method of the gate assembly 2 in the GCT element includes, for example, the following steps S10 to S40.

[0082] S10, bend the gate lead spoke 12 upward, and after installing the insulating sleeve and the disc spring assembly 13, embed the gate lead spoke 12 into the corresponding groove position of the shell base 11.

[0083] S20, install the gate connection ring 22 onto the gate insulating seat 21.

[0084] S30. Insert the multiple gate lead spokes 12 into the spoke entry notches G1 of the gate insulating base 21 one by one, and then rotate the gate insulating base 21 to engage the gate lead spokes 12 into the spoke screwing slots G3 through the rotation guiding slots G2. Specifically, the gate lead spokes 12 are pressure-connected to the contact pieces 222 of the gate connection ring 22.

[0085] S40. Install the gate lead ring gasket and the gate lead ring to complete the installation of some components of the gate assembly 2.

[0086] In some other embodiments, the gate insulating base 21 and the gate connection ring 22 are of an integral structure. Correspondingly, the assembly method of the gate assembly 2 in the GCT element includes, for example, the following steps S10' to S30'.

[0087] S10. Bend the gate lead spokes 12 upward, and after installing the insulating sleeve and the disc spring assembly 13, embed the gate lead spokes 12 into the corresponding groove positions of the shell base 11.

[0088] S20. Insert the multiple gate lead spokes 12 into the spoke entry notches G1 of the gate insulating base 21 one by one, and then rotate the gate insulating base 21 to engage the gate lead spokes 12 into the spoke screwing slots G3 through the rotation guiding slots G2. Specifically, the gate lead spokes 12 are pressure-connected to the contact pieces 222 of the gate connection ring 22.

[0089] S30. Install the gate lead ring gasket and the gate lead ring to complete the installation of some components of the gate assembly 2.

[0090] Some embodiments of the present disclosure also provide a semiconductor device, which may include the gate insulating base or the gate assembly described in any of the above embodiments. The semiconductor device also has the technical advantages possessed by the aforementioned gate insulating base or gate assembly, which will not be elaborated herein.

[0091] Exemplarily, the semiconductor device includes, but is not limited to, an integrated gate commutated thyristor device.

[0092] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0093] The above-described embodiments merely represent several implementation manners of the present disclosure. The description thereof is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present disclosure, several modifications and improvements can still be made, and these all fall within the protection scope of the present disclosure. Therefore, the protection scope of the patent of the present disclosure shall be subject to the appended claims.

Claims

1. A gate insulator, characterized in that: include: An insulating base and a plurality of spoke guide assembly channels arranged on the insulating base; wherein, The insulating base comprises: a base and an inner wall and an outer wall arranged on the top surface of the base; The spoke guide assembly channel comprises: The spokes enter the notches and extend upward and outward from the bottom surface of the base; A spoke screw-in slot extends downward and outward from the top surface of the outer wall; there is a gap between the spoke screw-in slot and the orthographic projection of the spoke entry notch in the vertical direction; The rotation guide groove is connected between the spoke entry notch and the spoke screw-on groove.

2. The gate insulating seat according to claim 1, characterized in that: The surface of the rotation guide groove close to the bottom surface of the base includes an inclined guide surface; Wherein, an angle is formed between the inclined guide surface and the bottom surface of the base.

3. The gate insulating seat according to claim 2, characterized in that: The angle between the inclined guide surface and the bottom surface of the base toward the spoke screw-on groove is no greater than 30°.

4. The gate insulating seat according to claim 2, characterized in that: The bottom surface of the spoke screw-on slot is lower than the top surface of the base; the upper edge of the inclined guide surface is flush with the top surface of the base and is connected to the corresponding side wall of the spoke screw-on slot through a portion of the top surface of the base.

5. The gate insulating seat according to any one of claims 1 to 4, characterized in that: The distance between the bottom surface of the spoke screwing slot and the bottom surface of the base is not less than 0.5 mm; And / or, the groove depth of the spoke screw-on groove along the vertical direction is not greater than the thickness of the gate lead-out spoke along the vertical direction; the width of the spoke entry notch and the spoke screw-on groove along the horizontal direction are not less than the width of the gate lead-out spoke along the horizontal direction.

6. A gate assembly, characterized in that: include: A gate insulating seat as claimed in any one of claims 1 to 5; Gate connection ring, including: an annular ring located on the top surface of the base between the inner wall and the outer wall; A plurality of contact pieces are distributed at intervals on the circumference of the annular ring and are respectively located on the bottom surfaces of the grooves corresponding to the spoke screw-on grooves.

7. The gate assembly according to claim 6, characterized in that: The top surface of the contact piece is an arc surface; the center of curvature of the arc surface is located on the side of the base away from the spoke screw-on groove.

8. The gate assembly according to claim 7, characterized in that: The gate connection ring and the gate insulating seat are integrally formed.

9. A method for using a gate insulating seat, characterized in that: include: Providing a gate insulating seat as claimed in any one of claims 1 to 5; Installing a plurality of gate lead-out spokes into the spoke entry notches of the gate insulating seat one by one; The gate insulating seat is rotated to allow the gate lead spoke to pass through the rotation guide groove and engage in the spoke rotation engagement groove.

10. A semiconductor device, characterized in that: The invention comprises a gate insulating seat as claimed in any one of claims 1 to 5; or comprises a gate assembly as claimed in any one of claims 6 to 8.

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