Display panel, method for manufacturing the same, and display device

Abstract

The present application provides a display panel, a preparation method thereof, and a display device. The preparation method includes: providing a prefabricated board; sequentially depositing a light-emitting layer and a cathode on the prefabricated board. The prefabricated board includes a driving substrate, an anode, a pixel definition layer, and a conductive isolation structure, and a sub-pixel unit is formed by sequentially laminating the anode, the light-emitting layer, and the cathode within a pixel opening. Before depositing the cathode, the preparation method further includes: through a mask plate, evaporating and depositing a barrier layer on the light-emitting layer except for the target pixel opening area; the barrier layer is mutually exclusive with the cathode material to prevent the cathode material from being deposited on the non-target pixel opening area. After depositing the cathode, it further includes: removing the barrier layer and the light-emitting layer except for the target pixel opening area. The preparation method of the display panel can reduce the process difficulty and improve the product yield.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and particularly to a display panel, a method for manufacturing the same, and a display device. Background Art

[0002] With the continuous development of display technologies, the eLEAP technology is most likely to become one of the new technologies for mass production in the future because it can perform evaporation without using a high-precision fine metal mask (FMM), and can improve the pixel aperture ratio and pixel density, significantly enhancing the brightness and service life of display products.

[0003] However, since the manufacturing process of this technology is relatively complex, when preparing each sub-pixel unit, after evaporation is completed, the cathode and the light-emitting layer within non-target pixel apertures need to be removed, leaving only the anode. This requires etching the cathode and the organic light-emitting layer separately, resulting in a complex process and the problem that incomplete cathode etching may cause local residues, affecting the product yield. Summary of the Invention

[0004] The present application provides a method for manufacturing a display panel, aiming to solve the problems in the prior art that the manufacturing process is complex and incomplete cathode etching may cause local residues, affecting the product yield.

[0005] To solve the above technical problems, the first technical solution provided by the present application is: providing a method for manufacturing a display panel. The manufacturing method includes:

[0006] Providing a prefabricated board; the prefabricated board includes a driving substrate, an anode, a pixel definition layer, and a conductive isolation structure; wherein, the anode and the pixel definition layer are disposed on the driving substrate, the pixel definition layer has a plurality of pixel apertures, and the anode is located within the pixel apertures; the conductive isolation structure protrudes from the pixel definition layer and surrounds the pixel apertures;

[0007] Sequentially depositing and forming a light-emitting layer and a cathode on the prefabricated board; the anode, the light-emitting layer, and the cathode stacked in sequence within the pixel apertures constitute a sub-pixel unit, and the cathode is in contact with and conducts with the conductive isolation structure;

[0008] Wherein, in the step of sequentially depositing and forming the light-emitting layer and the cathode on the prefabricated board,

[0009] Before depositing and forming the cathode, it further includes:

[0010] Evaporating and forming a barrier layer on the light-emitting layer except for the target pixel aperture region through a mask; the barrier layer is mutually exclusive with the cathode material to prevent the cathode material from depositing on the non-target pixel aperture region;

[0011] After depositing and forming the cathode, it further includes:

[0012] Remove the barrier layer and the light-emitting layer except for the opening area of the target pixel.

[0013] In some embodiments, the manufacturing method further includes: repeating the steps of sequentially depositing and forming a light-emitting layer and a cathode on a prefabricated board to respectively fabricate at least two first sub-pixel units and second sub-pixel units with different light-emitting colors;

[0014] Among them, when fabricating the first sub-pixel unit, the pixel opening corresponding to the first sub-pixel unit serves as the target pixel opening; when fabricating the second sub-pixel unit, the pixel opening corresponding to the second sub-pixel unit serves as the target pixel opening.

[0015] In some embodiments, the mask includes at least two first masks and second masks corresponding to the types of sub-pixel units;

[0016] When fabricating the corresponding sub-pixel unit, the step of evaporating and depositing a barrier layer on the light-emitting layer except for the target pixel opening area through the mask includes:

[0017] Align the corresponding first mask or second mask with the prefabricated board so that the first mask or second mask blocks the target pixel opening in the direction perpendicular to the prefabricated board, exposing other pixel openings;

[0018] Evaporate and deposit a barrier layer material to form a barrier layer on the light-emitting layer except for the target pixel opening area, so as to make the cathode only formed on the light-emitting layer within the target pixel opening.

[0019] In some embodiments, the step of removing the barrier layer and the light-emitting layer except for the target pixel opening includes:

[0020] Fabricate a protective layer on the side of the cathode away from the driving substrate;

[0021] Fabricate an anti-etching layer within the target pixel opening;

[0022] Remove the protective layer, the barrier layer, and the light-emitting layer except for the target pixel opening by etching;

[0023] Remove the anti-etching layer by etching.

[0024] In some embodiments, in the step of evaporating and depositing a barrier layer on the light-emitting layer except for the target pixel opening area through the mask, the barrier layer is formed in both the non-target pixel opening and on the side of the conductive isolation structure away from the driving substrate.

[0025] In some embodiments, in the step of removing the barrier layer and the light-emitting layer except for the target pixel opening area, a part of the barrier layer located on the conductive isolation structure is retained.

[0026] In some embodiments, the step of removing the barrier layer and the light-emitting layer except for the target pixel opening includes:

[0027] Fabricate a protective layer on the side of the cathode away from the driving substrate; the protective layer covers the pixel opening and the conductive isolation structure;

[0028] Fabricate an anti-etching layer within the target pixel opening; the anti-etching layer covers the target pixel opening and the conductive isolation structure surrounding the target pixel opening;

[0029] Remove the protective layer, the barrier layer, and the light-emitting layer except for the area of the anti-etching layer by etching;

[0030] Remove the anti-etching layer by etching.

[0031] In some embodiments, the material of the barrier layer includes a cathode patterning material, and the cathode material includes a metal material.

[0032] To solve the above technical problems, the second technical solution provided by this application is: to provide a display panel. The display panel is fabricated by the fabrication method as described in the above technical solution; the display panel includes:

[0033] A driving substrate;

[0034] A pixel definition layer, disposed on the driving substrate and having a plurality of pixel openings;

[0035] A conductive isolation structure, protruding from the pixel definition layer and surrounding the pixel opening;

[0036] A sub-pixel unit, including an anode, a light-emitting layer, and a cathode stacked within the pixel opening; the cathode is in contact with and electrically connected to the conductive isolation structure;

[0037] Among them, the sub-pixel unit includes at least two first sub-pixel units and second sub-pixel units with different light-emitting colors;

[0038] A barrier layer is provided on the side of the conductive isolation structure away from the driving substrate, and the barrier layer is mutually repulsive with the cathode material, and is used to prevent the cathode material from depositing on the surface of the side of the conductive isolation structure away from the driving substrate.

[0039] To solve the above technical problems, the third technical solution provided by this application is: to provide a display device. The display device includes a circuit board and the display panel as described in the above technical solution, and the circuit board is electrically coupled to the display panel.

[0040] Advantages of the present application: Different from the prior art, the present application provides a display panel, a manufacturing method thereof, and a display device. In the manufacturing method of the display panel provided by the embodiment of the present application, when forming a light-emitting layer and a cathode sequentially on a prefabricated board to manufacture a sub-pixel unit, before depositing and forming the cathode, a barrier layer is vapor-deposited on the light-emitting layer except for the target pixel opening area through a mask plate, and the barrier layer is mutually exclusive with the cathode material, so that in the process of depositing and forming the cathode, the cathode material cannot adhere to the barrier layer, that is, the barrier layer can prevent the cathode material from being deposited on the non-target pixel opening area, and the cathode material can only be deposited on the light-emitting layer within the target pixel opening to form a cathode. Therefore, the cathode cannot form a film in the area other than the target pixel opening area. When removing the film layer deposited outside the target pixel opening area, it is not necessary to etch the cathode anymore, and only one etching process for the barrier layer and the light-emitting layer outside the target pixel opening area is required, saving the cathode etching process, reducing the process difficulty, and avoiding the problem of local residue caused by incomplete cathode etching, thereby improving the product brightness. Description of the Drawings

[0041] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those of ordinary skill in the art, without any creative effort, other drawings can be obtained according to these drawings.

[0042] Figure 1 It is a schematic flow chart of the manufacturing method of the display panel provided by the first embodiment of the present application;

[0043] Figure 2 It is a schematic structural diagram of the prefabricated board provided by an embodiment of the present application;

[0044] Figure 3 is Figure 1 A schematic flow chart of step S2 in the manufacturing method provided by the embodiment;

[0045] Figures 4a - 4g is Figure 3 The corresponding process flow schematic diagrams of each step in the embodiment;

[0046] Figure 5 It is a schematic flow chart of the manufacturing method of the display panel provided by the second embodiment of the present application;

[0047] Figures 6a - 6g is Figure 5 The corresponding process flow schematic diagram of step S4;

[0048] Figure 7It is a schematic flowchart of a method for manufacturing a display panel provided in the third embodiment of the present application;

[0049] Figures 8a - 8g is Figure 7 a schematic process flow diagram corresponding to step S4 in

[0050] Figure 9 It is a schematic flowchart of step S24 provided in an embodiment of the present application;

[0051] Figures 10a - 10g is Figure 7 a schematic process flow diagram of another embodiment of the first sub-pixel unit in the provided manufacturing method;

[0052] Figures 11a - 11g is Figure 7 a schematic process flow diagram of another embodiment of the second sub-pixel unit in the provided manufacturing method;

[0053] Figures 12a - 12g is Figure 7 a schematic process flow diagram of another embodiment of the third sub-pixel unit in the provided manufacturing method;

[0054] Figure 13 It is a schematic structural diagram of a display device provided in an embodiment of the present application.

[0055] Reference numerals:

[0056] 100 - prefabricated board; 10 - driving substrate; 11 - anode; 20 - pixel definition layer; 21 - pixel opening; T - target pixel opening; non-target pixel opening - NT; 30 - conductive isolation structure; 31 - conductive structure; 32 - top structure; 40 - light-emitting layer; 41 - first light-emitting layer; 42 - second light-emitting layer; 43 - third light-emitting layer; 44 - cathode; 45 - protective layer; 46 - anti-etching layer; 50 - barrier layer; P - sub-pixel unit; P1 - first sub-pixel unit; P2 - second sub-pixel unit; P3 - third sub-pixel unit; 200 - display panel. Detailed implementation manners

[0057] The following will describe the solutions of the embodiments of the present application in detail with reference to the accompanying drawings of the specification.

[0058] In the following description, specific details such as specific system structures, interfaces, and technologies are presented for the purpose of illustration rather than limitation, so as to understand the present application thoroughly.

[0059] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts shall fall within the protection scope of the present application.

[0060] The terms "first", "second", and "third" in the present application are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first", "second", and "third" may explicitly or implicitly include at least one of such features. In the description of the present application, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined. All directional indications (such as up, down, left, right, front, back...) in the embodiments of the present application are only used to explain the relative positional relationship and movement conditions between components in a specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indications will also change accordingly. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but optionally further includes steps or units not listed, or optionally further includes other steps or units inherent to these processes, methods, products, or devices.

[0061] Referring to "embodiments" herein means that the specific features, structures, or characteristics described in connection with the embodiments can be included in at least one embodiment of the present application. The phrase appears in various places in the specification and does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0062] The present application will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0063] Please refer to Figure 1 , Figure 1 which is a schematic flow chart of a method for manufacturing a display panel provided by an embodiment of the present application. In this embodiment, a schematic flow chart of a method for manufacturing a display panel is provided. In this embodiment, a method for manufacturing a display panel is provided, and the manufacturing method includes:

[0064] S1: Provide a prefabricated board 100;

[0065] S2: Sequentially deposit a light-emitting layer 40 and a cathode 44 on the prefabricated board 100.

[0066] Please refer to Figure 2 , Figure 2 which is a schematic structural diagram of a prefabricated board provided by an embodiment of the present application. Specifically, in step S1, the prefabricated board 100 includes a driving substrate 10, an anode 11, a pixel definition layer 20, and a conductive isolation structure 30. Among them, the anode 11 and the pixel definition layer 20 are disposed on the driving substrate 10. The pixel definition layer 20 has a plurality of pixel openings 21, and the anode 11 is located within the pixel openings 21. The conductive isolation structure 30 protrudes from the pixel definition layer 20 and surrounds the pixel openings 21.

[0067] In step S2, a light-emitting layer 40 and a cathode 44 are sequentially deposited on the prefabricated board 100 to fabricate a sub-pixel unit P for light emission. Specifically, the anode 11, the light-emitting layer 40, and the cathode 44 stacked in sequence within the pixel openings 21 constitute the sub-pixel unit P, and the cathode 44 is in contact with and electrically connected to the conductive isolation structure 30.

[0068] As Figure 2 shown, the driving substrate 10 includes a driving circuit (not shown in the figure), and the driving circuit is electrically connected to the anode 11 and is used to drive the sub-pixel unit P to emit light. The driving substrate 10 can specifically be a rigid substrate or a flexible substrate, which can be specifically set according to the usage scenario and usage requirements.

[0069] The pixel definition layer 20 protrudes from the driving substrate 10 to form pixel openings 21 for accommodating the sub-pixel units P. The pixel openings 21 are arranged in an array, and can be specifically arranged according to the arrangement design of the sub-pixel units P. The pixel definition layer 20 can specifically be formed by patterning through a photolithography process, or can also be prepared by other patterning processes.

[0070] The conductive isolation structure 30 is used to isolate each sub-pixel unit P. Specifically, the conductive isolation structure 30 separates the light-emitting layers 40 of each sub-pixel unit P from each other, and also separates the cathodes 44 of sub-pixels of different colors, avoiding pixel crosstalk problems. At the same time, the cathodes 44 of each sub-pixel unit P are in contact with and electrically connected to the conductive isolation structure 30, so as to electrically connect the cathodes 44 of each sub-pixel unit P through the conductive isolation structure 30, achieving a mesh connection between different sub-pixel units P and realizing the uniformity of the entire surface signal of the cathode 44.

[0071] Specifically, the conductive isolation structure 30 includes a conductive structure 31 and a top structure 32 that are sequentially stacked. Among them, the conductive structure 31 protrudes on the pixel definition layer 20 and surrounds the pixel opening 21; the top structure 32 is located on the upper surface of the conductive isolation structure 30, covers the conductive structure 31, and extends out of the conductive structure 31 in a direction parallel to the pixel definition layer 20. That is, the top structure 32 is in contact with the conductive structure 31, and the orthographic projection of the top structure 32 on the driving substrate 10 completely covers the orthographic projection of the conductive isolation structure 30 on the driving substrate 10. Specifically, the part of the top structure 32 extending out of the conductive structure 31 is suspended relative to the conductive structure 31.

[0072] In step S2, the light-emitting layer 40 and the cathode 44 can be sequentially deposited on the prefabricated board 100 by evaporation. At the same time, the conductive isolation structure 30 on the prefabricated board 100 can replace the mask plate for evaporating the light-emitting layer 40 and the cathode 44; and when the light-emitting layer 40 and the cathode 44 are formed by evaporation, the evaporation angle can be adjusted through the suspended part of the top structure 32 to adjust the edge range of each film layer in the light-emitting layer 40. There are multiple conductive isolation structures 30, and two adjacent conductive isolation structures 30 share the same side of the conductive isolation structure 30 to ensure that the distances between the sub-pixel units P are equal, which is beneficial to the uniformity of display. Specifically, the conductive isolation structure 30 is a ring structure and matches the shape of the sub-pixel unit P to be used for preparing the sub-pixel unit P with a preset shape.

[0073] In the direction perpendicular to the driving substrate 10, the longitudinal section of the side wall of the conductive structure 31 is trapezoidal, and the cross section of the side wall of the conductive structure 31 gradually decreases in the direction close to the top structure 32 to facilitate the contact setting of the cathode 44 and the conductive structure 31.

[0074] Please refer to Figure 3 、 Figures 4a - 4g , Figure 3 is Figure 1 a schematic flow chart of step S2 in the preparation method provided by the embodiment, Figures 4a - 4g is Figure 3 a schematic process flow chart corresponding to each step in the embodiment. Specifically, step S2 includes:

[0075] S21: Deposit and form the light-emitting layer 40 on the prefabricated board 100;

[0076] S22: Through the mask plate, evaporate and form the barrier layer 50 on the light-emitting layer 40 except in the target pixel opening T area;

[0077] S23: Deposit and form the cathode 44 on the light-emitting layer 40;

[0078] S24: Remove the barrier layer 50 and the light-emitting layer 40 except in the target pixel opening T area.

[0079] In this embodiment, step S2 is used to prepare the sub-pixel light-emitting unit. The pixel opening 21 corresponding to the sub-pixel unit P formed in this step serves as the target pixel opening T. For example, in step S2, when preparing to form a red sub-pixel unit P, the pixel opening 21 for accommodating the red sub-pixel unit P serves as the target pixel opening T in this process, and the other pixel openings 21 serve as non-target pixel openings NT in this process.

[0080] In step S21, through the conductive isolation structure 30, the light-emitting layer 40 material is evaporated and deposited to form the light-emitting layer 40 by deposition in each pixel opening 21. For example, in this process, when it is necessary to prepare a red sub-pixel unit P, the material of the red light-emitting layer 40 is evaporated and deposited to form the red light-emitting layer 40 by deposition in each pixel opening 21.

[0081] Then, in step S22, through the corresponding mask plate, a barrier layer 50 is evaporated and formed on the light-emitting layer 40 except in the area of the target pixel opening T. Specifically, the corresponding mask plate is aligned with the prefabricated plate 100 so that the mask plate blocks the target pixel opening T in the direction perpendicular to the prefabricated plate 100, exposing the other pixel openings 21, and then the barrier layer material is evaporated and deposited to form the barrier layer 50 by deposition on the light-emitting layer 40 except in the area of the target pixel opening T. Specifically, the barrier layer 50 repels the cathode material to prevent the cathode material from being deposited in the non-target pixel opening NT area, so that the cathode material cannot adhere to the barrier layer 50 and can only be deposited on the light-emitting layer 40 within the target pixel opening T to form the corresponding cathode 44.

[0082] In step S23, through the conductive isolation structure 30, the cathode material is evaporated and deposited to form the cathode 44 by deposition on the light-emitting layer 40. Specifically, since the barrier layer 50 is located on the light-emitting layer 40 except in the area of the target pixel opening T, during the process of evaporating and depositing the cathode material, the cathode material can only be deposited on the light-emitting layer 40 within the target pixel opening T to form the cathode 44. Therefore, the cathode 44 cannot be formed into a film in the area except the area of the target pixel opening T.

[0083] Afterwards, it is necessary to remove the deposited film layers in the non-target pixel opening NT, and only the anode 11 is retained to support the preparation of other sub-pixel units P in the subsequent process. Then, in step S24, when removing the film layers deposited except in the area of the target pixel opening T, there is no need to etch the cathode 44 anymore, and only the barrier layer 50 and the light-emitting layer 40 outside the area of the target pixel opening T need to be etched once, saving the cathode 44 etching process, reducing the process difficulty, and avoiding the problem of local residue caused by incomplete etching of the cathode 44, thereby improving the product brightness.

[0084] It should be noted that in the specific manufacturing process, in the process of removing the film layer outside the pixel opening 21 area, usually the cathode 44 needs to be etched by wet etching, while the light-emitting layer 40 and other film layers, such as the protective layer 45, are usually etched by dry etching. Therefore, the process is relatively complex and usually requires three etching processes to remove the film layer that needs to be removed.

[0085] To solve the above technical problems, in this embodiment, before depositing and forming the cathode 44, in the non-target pixel opening NT area, that is, the area that needs to be etched, a barrier layer 50 that repels the cathode material is deposited on the light-emitting layer 40 by using a corresponding mask plate, so that the cathode material cannot adhere to the etched area. Thus, there is no need for an additional cathode 44 etching process, and only one etching is required for the light-emitting layer 40, the barrier layer 50, and other film layers that need to be etched, reducing the process difficulty and avoiding the problem of local residue caused by incomplete etching of the cathode 44, and improving the product brightness.

[0086] Please refer to Figure 5 , Figure 5 which is a schematic flow chart of the method for manufacturing a display panel provided in the second embodiment of the present application. In this embodiment, a method for manufacturing a display panel 200 is provided, and the manufacturing method includes:

[0087] S1: Provide a prefabricated board 100;

[0088] S2: Sequentially deposit and form a light-emitting layer 40 and a cathode 44 on the prefabricated board 100;

[0089] S3: Repeat step S2 to separately fabricate and form a first sub-pixel unit P1 and a second sub-pixel unit P2 with different emission colors.

[0090] In this embodiment, step S1 and step S2 are the same as step S1 and step S2 involved in the above embodiment, and the specific structure and function of the prefabricated board 100 provided in step S1 are the same as Figure 2 the specific structure and function of the prefabricated board 100 provided in the embodiment, and the same technical effects can be achieved, and specific details can be referred to the above detailed description.

[0091] Among them, the specific step process corresponding to step S2 and the corresponding process flow are as Figure 3 and Figures 4a - 4g shown. In this step, a first light-emitting layer 41 is deposited and formed through step S21. In this embodiment, step S2 is used to fabricate and form the first sub-pixel unit P1; step S3 is used to fabricate and form the second sub-pixel unit P2. The first sub-pixel unit P1 is used to emit light of a first color, and the second sub-pixel unit P2 is used to emit light of a second color.

[0092] Specifically, please refer to Figures 6a - 6g , Figures 6a - 6g which is Figure 5 the process flow schematic diagram corresponding to step S4 in . In step S3, that is, in the process of fabricating the second sub-pixel unit P2, it is basically the same as the process of fabricating the first sub-pixel unit P1. In this process, the pixel opening 21 corresponding to the second sub-pixel unit P2 serves as the target pixel opening T, and the other pixel openings 21 serve as non-target pixel openings NT. It can be understood that in the process of fabricating different sub-pixel units P, the target pixel opening T is different, and the target pixel opening T changes with the fabricated sub-pixel unit P; that is, for which sub-pixel unit P is fabricated, the pixel opening 21 for accommodating that sub-pixel unit P serves as the target pixel opening T, and all other pixel openings 21 serve as non-target pixel openings NT.

[0093] In the process of fabricating the second sub-pixel unit P2, first, using the conductive isolation structure 30, the material of the second light-emitting layer 42 is evaporated and deposited to form the second light-emitting layer 42 by deposition in each pixel opening 21. Then, through the corresponding second mask plate, a barrier layer 50 is evaporated and deposited on the light-emitting layer 40 except in the area of the target pixel opening T. Specifically, the corresponding second mask plate is aligned with the prefabricated plate 100 on which the first sub-pixel unit P1 has been fabricated, so that the second mask plate blocks the target pixel opening T in the direction perpendicular to the prefabricated plate 100, exposing the other pixel openings 21, and the barrier layer material is evaporated and deposited using the second mask plate to form the barrier layer 50 by deposition on the second light-emitting layer 42 except in the area of the target pixel opening T. Specifically, the barrier layer 50 is mutually exclusive with the cathode material to prevent the cathode material from being deposited in the area outside the target pixel opening T, so that the cathode material cannot adhere to the barrier layer 50 and can only be deposited on the light-emitting layer 40 within the target pixel opening T to form the corresponding cathode 44.

[0094] Then, using the conductive isolation structure 30 and the above-mentioned barrier layer 50, the cathode material is evaporated and deposited to form the cathode 44 on the second light-emitting layer 42 within the target pixel opening T. In this step, since the barrier layer 50 is located in the area outside the target pixel opening T area, during the process of evaporating and depositing the cathode material, the cathode material can only be deposited on the second light-emitting layer 42 within the target pixel opening T to form the cathode 44. Therefore, the cathode 44 cannot form a film in the area outside the target pixel opening T.

[0095] When removing the film layer deposited outside the target pixel opening T region, since the cathode 44 is not deposited in the region to be etched, there is no need to etch the cathode 44 anymore. Instead, only the barrier layer 50 and the second light-emitting layer 42 outside the target pixel opening T region need to be etched once, saving the cathode 44 etching process, reducing the process difficulty, and avoiding the problem of local residue caused by incomplete etching of the cathode 44, thereby improving the product brightness.

[0096] Please refer to Figure 7 , Figure 7 which is a schematic flowchart of a method for manufacturing a display panel provided by the third embodiment of the present application. In this embodiment, a method for manufacturing a display panel 200 is provided, and the manufacturing method includes:

[0097] S1: Provide a prefabricated board 100;

[0098] S2: Sequentially deposit and form a light-emitting layer 40 and a cathode 44 on the prefabricated board 100;

[0099] S3: Repeat step S2 to respectively fabricate and form a first sub-pixel unit P1 and a second sub-pixel unit P2 with different emission colors;

[0100] S4: Repeat step S2 again to fabricate and form a third sub-pixel unit P3 with an emission color different from those of the first sub-pixel unit P1 and the second sub-pixel unit P2.

[0101] In this embodiment, steps S1 to S3 are the same as steps S1 to S3 involved in the above embodiment, and the specific structure and function of the prefabricated board 100 provided in step S1 are the same as Figure 2 the specific structure and function of the prefabricated board 100 provided in the embodiment, and the same technical effects can be achieved, and specific details can be referred to the above detailed description.

[0102] Please refer to Figures 8a - 8g , Figures 8a - 8g is Figure 7Schematic process flow diagram corresponding to step S4. Similarly to the process of fabricating the first sub-pixel unit P1 and the second sub-pixel unit P2, in step S4, by repeating step S2, it is used to fabricate the third sub-pixel unit P3. Similarly, step S4 is used to fabricate the third sub-pixel unit P3. In this process, the pixel opening 21 corresponding to the third sub-pixel unit P3 serves as the target pixel opening T, and the other pixel openings 21 serve as non-target pixel openings NT. In this process, using the corresponding third mask plate, the third mask plate is aligned with the prefabricated plate 100 so that the third mask plate blocks the target pixel opening T in the direction perpendicular to the prefabricated plate 100, exposing the other pixel openings 21, and using the third mask plate to evaporate the barrier layer material to deposit and form the barrier layer 50 on the third light-emitting layer 43 except in the area of the target pixel opening T. Thus, in the subsequent step of evaporating the cathode material, the cathode 44 can only be deposited and formed on the third light-emitting layer 43 within the target pixel opening T. Furthermore, when removing the film layers deposited outside the area of the target pixel opening T, it is no longer necessary to etch the cathode 44, and only the barrier layer 50 and the third light-emitting layer 43 outside the area of the target pixel opening T need to be etched once, saving the cathode 44 etching process, reducing the process difficulty, and avoiding the problem of local residue caused by incomplete etching of the cathode 44, improving the product brightness.

[0103] Please refer to Figure 9 , Figure 9 is a schematic process flow diagram of step S24 provided by an embodiment of the present application. Specifically, in the above embodiment, regarding removing the barrier layer 50 and the light-emitting layer 40 outside the area of the target pixel opening T in step S24, it specifically includes the following steps:

[0104] S241: Fabricate a protective layer 45 on the side of the cathode 44 away from the driving substrate 10;

[0105] S242: Fabricate an anti-etching layer 46 within the target pixel opening T;

[0106] S243: Remove the protective layer 45, the barrier layer 50, and the light-emitting layer 40 outside the target pixel opening T by etching;

[0107] S244: Remove the anti-etching layer 46 by etching.

[0108] Specifically, please refer to Figures 4d - 4g , Figures 6d - 6g , Figures 8d - 8g, before etching the barrier layer 50 and the light-emitting layer 40, a protective layer 45 is first formed on the side of the cathode 44 away from the driving substrate 10 to protect the first sub-pixel unit P1, the second sub-pixel unit P2, or the third sub-pixel unit P3 formed in this process, preventing the sub-pixel unit P that has been formed from being damaged during the subsequent etching process. An anti-etching layer 46 is formed within the target pixel opening T, that is, the anti-etching layer 46 is filled within the target pixel opening T, so that the anti-etching layer 46 fills the concave region of the target pixel opening T and covers the exposed surfaces of the protective layer 45 on the conductive isolation structures 30 on both sides of the target pixel opening T.

[0109] Then, in step S243, the protective layer 45 outside the target pixel opening T is removed by a suitable etching method to expose the anode 11 within the non-target pixel opening NT, facilitating the subsequent formation of other sub-pixel units P. Specifically, in this embodiment, the etching method can adopt a wet etching process or a dry etching process, which can be specifically selected according to specific preparation requirements.

[0110] In the embodiment of the present application, the material of the above-mentioned barrier layer 50 may specifically include a cathode patterning material (CPM). In some embodiments, the CPM material is a fluorine-containing organic material, such as a perfluorinated cyclotriphosphazene compound. The CPM material can be deposited on the driving substrate 10 by a low-temperature vacuum evaporation method to form the above-mentioned barrier layer 50. In other embodiments, the CPM material may not be a fluorine-containing organic material, as long as the CPM material is incompatible with the metal material and mutually repulsive. The cathode material may specifically include a metal material. Among them, the film layer formed by the CPM material is mutually repulsive with the metal material, so that the above-mentioned barrier layer 50 is formed by utilizing this property of the CPM material to prevent the cathode material from being deposited in the non-target pixel opening NT region, so that the cathode 44 can only be deposited on the light-emitting layer 40 within the target pixel opening T.

[0111] Specifically, the cathode material may include magnesium (Mg), silver (Ag), aluminum (Al), lithium (Li), calcium (Ca), indium (In), or a magnesium-silver alloy (Mg:Ag), a lithium-aluminum alloy (Li:Al). It can be specifically selected according to actual preparation requirements. Among them, the material of the anode 11 may be the same as that of the cathode material, or the material of the anode 11 may also include metal oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), etc., or the anode 11 may also be a laminated structure of different materials.

[0112] Specifically, the display panel 200 prepared by the preparation method provided by the above embodiments can be a top-emission mode or a bottom-emission mode. For the display panel 200 in the top-emission mode, the light emitted by the light-emitting layer 40 in the sub-pixel unit P is emitted through the cathode 44. The thickness of the cathode 44 in the direction perpendicular to the driving substrate 10 is between 5 nm and 50 nm, such as 10 nm, 15 nm, 20 nm or 30 nm, and can be specifically set according to actual needs; the thickness of the anode 11 in the direction perpendicular to the driving substrate 10 is not less than 100 nm to enhance the reflection effect of the anode 11, thereby improving the light utilization rate of the display panel 200. For the display panel 200 in the bottom-emission mode, the light emitted by the light-emitting layer 40 in the sub-pixel unit P is emitted through the anode 11. The thickness of the anode 11 in the direction perpendicular to the driving substrate 10 is between 5 nm and 50 nm, such as 10 nm, 15 nm, 20 nm or 30 nm; the thickness of the cathode 44 in the direction perpendicular to the driving substrate 10 is not less than 100 nm to enhance the reflection effect of the cathode 44, thereby improving the light utilization rate of the display panel 200.

[0113] Please refer to FIG. Figures 10a - 10g , Figures 10a - 10g is Figure 7 A schematic process flow diagram of another embodiment of the first sub-pixel unit in the provided preparation method. In this embodiment, in step S22 of depositing and forming the barrier layer 50 on the light-emitting layer 40 except for the area of the target pixel opening T through a mask, the barrier layer 50 is formed in both the non-target pixel opening NT and the side of the conductive isolation structure away from the driving substrate 10.

[0114] As Figure 10b shown, in step S22, the target pixel opening T is blocked by a corresponding mask to enable the barrier layer material to be deposited on other areas of the prefabricated plate 100 except for the target pixel opening T during the evaporation process, including the non-target pixel opening NT and the area of the conductive isolation structure 30, so that the barrier layer 50 is formed on both the non-target pixel opening NT and the conductive isolation structure 30.

[0115] As Figure 10c shown, since the barrier layer 50 repels the cathode material, during the evaporation process of the cathode material, the cathode material is only deposited within the target pixel opening T and cannot be deposited on the conductive isolation structure 30 and within the non-target pixel opening NT.

[0116] Through the above preparation method, there is no cathode 44 on the side of the conductive isolation structure 30 away from the driving substrate 10. Therefore, when etching the barrier layer 50 and the light-emitting layer 40 except for the target pixel opening T area subsequently, it is possible to avoid the problem that particles of the cathode 44 remaining at the edge of the top structure 32 of the conductive isolation 30 structure fall into the adjacent pixel opening 21 during the etching of the cathode 44 on the conductive isolation structure 30, resulting in display anomalies.

[0117] Specifically, in this embodiment, the sub-pixel unit P includes a first sub-pixel unit P1, a second sub-pixel unit P2, and a third sub-pixel unit P3 with different emission colors, and the emission colors can be red, green, and blue respectively. Through Figures 10a - 10g the process, the first sub-pixel unit P1 is formed.

[0118] Furthermore, as Figures 10d - 10g shown, in this embodiment, regarding the removal of the barrier layer 50 and the light-emitting layer 40 except for the target pixel opening T area in step S24, the specific steps are similar to Figure 9 However, the difference is that in step S242 of fabricating the anti-etching layer 46 within the target pixel opening T, the anti-etching layer 46 covers the target pixel opening T and the conductive isolation structure 30 surrounding the target pixel opening T.

[0119] It can be understood that by making the anti-etching layer 46 cover the target pixel opening T and the conductive isolation structure 30 surrounding the target pixel opening T, in the process of step S243 of etching away the protective layer 45, the barrier layer 50, and the light-emitting layer 40 except for the target pixel opening T, the barrier layer 50 on the conductive isolation structure 30 surrounding the target pixel opening T is not etched away and remains.

[0120] Please refer to Figures 11a - 11g , Figures 11a - 11g is Figure 7 a schematic process flow diagram of another embodiment of the second sub-pixel unit in the provided preparation method. Similarly, taking the pixel opening 21 corresponding to the second sub-pixel unit P2 as the target pixel opening T, the above steps S21 - S24 are repeated to form the second sub-pixel unit P2.

[0121] As Figure 11b shown, in step S22, the target pixel opening T is blocked by the corresponding mask plate, so that during the evaporation process, the barrier layer material is deposited on other areas of the prefabricated plate 100 except for the target pixel opening T, including the non-target pixel opening NT and the area of the conductive isolation structure 30, and a barrier layer 50 is formed both in the non-target pixel opening NT and on the conductive isolation structure 30. Thus, in step S23, the corresponding process flow diagram is as Figure 11cAs shown, the cathode 44 is only deposited within the target pixel opening, thereby avoiding the problem that the deposition of the cathode 44 on the conductive isolation structure 30 causes particles of the locally remaining cathode 44 to fall into the adjacent pixel opening 21 during the subsequent etching process, resulting in display anomalies.

[0122] Further, as Figure 11e shown, during the process of fabricating the second sub-pixel unit P2, in step S242, the anti-etching layer 46 covers the target pixel opening T and the conductive isolation structure 30 surrounding the target pixel opening T, so that in step 243 of etching away the protective layer 45, the barrier layer 50, and the light-emitting layer 40 other than the target pixel opening T, the barrier layer 50 on the conductive isolation structure 30 surrounding the target pixel opening T is not etched away and remains.

[0123] Please refer to Figures 12a - 12g , Figures 12a - 12g is Figure 7 a schematic diagram of the manufacturing process flow of another embodiment of the third sub-pixel unit in the provided manufacturing method. In this process, it is used to fabricate the third sub-pixel unit P3. Therefore, taking the pixel opening 21 corresponding to the third sub-pixel unit P3 as the target pixel opening T, the above steps S21 - S24 are repeated to form the third sub-pixel unit P3.

[0124] As Figure 12b shown, in step S22, the barrier layer material is deposited on other regions of the prefabricated board 100 except for the target pixel opening T, that is, the barrier layer material is deposited on the third light-emitting layer 43 within the non-surface pixel opening NT and on the top structure 32 of the conductive isolation structure 30. Thus, when preparing the cathode 44 in the next step, as Figure 12c shown, the cathode 44 is only deposited on the third light-emitting layer 43 within the target pixel opening T. Thus, in the subsequent etching process, there is no need to etch the cathode, reducing the etching steps.

[0125] It should be noted that if the cathode material is deposited in regions other than the target pixel opening T, it needs to be etched. Since the cathode material is different from the materials of the protective layer 45 and the light-emitting layer 40, three etching steps of wet etching - dry etching - wet etching are required during the etching process. In the embodiment of the present application, the cathode material is only deposited within the target pixel opening T and does not need to be etched. Therefore, only one etching is required, effectively simplifying the etching process steps; moreover, it can also avoid the problem that particles of the cathode 44 fall into the adjacent pixel opening 21 during the etching of the cathode 44.

[0126] As Figures 12e - 12gAs shown, in the etching process, the anti-etching layer 46 also covers the target pixel opening T and the conductive isolation structure 30 surrounding the target pixel opening T, so that after etching, the barrier layer 50 on the conductive isolation structure 30 surrounding the target pixel opening T is retained.

[0127] Therefore, in the above processes of preparing the first sub-pixel unit P1, the second sub-pixel unit P2, and the third sub-pixel unit P3, by covering the anti-etching layer 46 on the target pixel opening T and the conductive isolation structure 30 surrounding the target pixel opening T in the corresponding processes respectively, the barrier layer 50 on the conductive isolation structure 30 surrounding the target pixel opening T is covered, so that it is not etched away in the etching step, and in the process of each sub-pixel unit P, the barrier layer 50 on the conductive isolation structure 30 surrounding the target pixel opening T is retained. That is, in the step S24 of removing the barrier layer 50 and the light-emitting layer 40 except for the area of the target pixel opening T, a part of the barrier layer 50 located on the conductive isolation structure 30 is retained to further prevent the cathode 44 from depositing on the conductive isolation structure 30, avoid affecting the etching of the light-emitting layer 40 in the etching step, and avoid the cathode particles at the upper side edge of the conductive isolation structure 30 falling into the adjacent pixel opening 21, causing problems of abnormal display.

[0128] In an embodiment of the present application, a display panel 200 is provided. The display panel 200 can be manufactured by the manufacturing method provided in the above embodiments. The specific structure of the display panel 200 is as Figure 8g or Figure 12g shown. The display panel 200 includes a driving substrate 10, a pixel definition layer 20, a conductive isolation structure 30, and a sub-pixel unit P.

[0129] Specifically, the specific structures and functions of the driving substrate 10, the pixel definition layer 20, the conductive isolation structure 30, and the sub-pixel unit P are the same as those of the driving substrate 10, the pixel definition layer 20, the conductive isolation structure 30, and the sub-pixel unit P involved in the above embodiments, and the same technical effects can be achieved.

[0130] Wherein, a barrier layer 50 is provided on the side of the conductive isolation structure 30 away from the driving substrate 10. The barrier layer 50 is mutually exclusive with the cathode material and is used to prevent the cathode material from depositing on the surface of the side of the conductive isolation structure 30 away from the driving substrate 10, so that in the process of manufacturing the sub-pixel unit P, the cathode 44 is only deposited in the pixel opening 21, and there is no need to etch the cathode 44 again, simplifying the process, and avoiding affecting the etching of the light-emitting layer 40 due to the deposition of the cathode material on the conductive isolation structure 30 in the etching step, and avoiding the cathode particles at the upper side edge of the conductive isolation structure 30 falling into the adjacent pixel opening 21, causing problems of abnormal display.

[0131] In this embodiment, the cathode 44 is fabricated by using the conductive isolation structure 30 and the barrier layer 50. This can not only improve the pixel aperture ratio 21 and pixel density, simplify the process, but also avoid the problem of local residue caused by incomplete etching of the cathode 44 during the preparation process, thereby improving the product yield of the display panel 200.

[0132] Further, on the display panel 200, after preparing the corresponding sub-pixel unit P, a part of the barrier layer 50 corresponding to the pixel aperture 21 is removed, and a part of the barrier layer 50 located on the side of the conductive isolation structure 30 away from the driving substrate 10 is retained. That is, a part of the barrier layer 50 is retained on the side of the conductive isolation structure 30 away from the driving substrate 10. The material of the barrier layer 50 includes CPM material, making the barrier layer 50 in a transparent state with a relatively high transmittance. By retaining a part of the barrier layer 50 on the side of the conductive isolation structure 30 away from the driving substrate 10, the transmittance of the display panel 200 can be improved.

[0133] Further, to improve the transmittance of the display panel 200, a light extraction layer (CPL layer, not shown in the figure) can also be provided between the cathode 44 and the protective layer 45 in the sub-pixel unit P of the display panel 200 to reduce the light loss caused by reflection from nearby electrodes during light emission, improve the light efficiency of the display panel 200, that is, improve the light refractive index generated by the display panel 200, and improve the optical characteristics of the display panel 200 through light absorption suppression.

[0134] Please refer to Figure 13 , Figure 13 which is a schematic structural diagram of a display device provided by an embodiment of the present application. In this embodiment, a display device is provided, and this display device can be used in fields such as tablets, mobile phones, vehicles, and lighting.

[0135] The display device includes a circuit board (not shown in the figure) and a display panel 200. The circuit board is electrically coupled to the display panel 200 and is used to provide various driving signals, power supply signals, and other display signals required by the display panel 200. Among them, the specific structure and function of the display panel 200 are the same as or similar to those of the display panel 200 in the above embodiment, and the same technical effects can be achieved. Specifically, reference can be made to the above introduction. Specifically, the display panel 200 can be fabricated by the fabrication method provided by the above embodiment. The display device can effectively simplify the etching process, avoid incomplete etching of the cathode resulting in local residue, and improve the product yield.

[0136] The above are only the embodiments of the present application, and do not limit the patent protection scope of the present application. Any equivalent structural or equivalent process transformation made by using the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be similarly included in the patent protection scope of the present application.

Claims

1. A method for preparing a display panel, comprising: Provide prefabricated panels; The prefabricated board includes a driving substrate, an anode, a pixel definition layer and a conductive isolation structure; wherein the anode and the pixel definition layer are arranged on the driving substrate, the pixel definition layer has a plurality of pixel openings, and the anode is located in the pixel openings; the conductive isolation structure protrudes from the pixel definition layer and surrounds the pixel openings; A light-emitting layer and a cathode are sequentially deposited on the prefabricated plate; the anode, the light-emitting layer and the cathode sequentially stacked in the pixel opening constitute a sub-pixel unit, and the cathode is arranged in contact with and conductive to the conductive isolation structure; It is characterized in that in the step of sequentially depositing the light-emitting layer and the cathode on the prefabricated plate, Before depositing to form the cathode, the method further comprises: By means of a mask, a barrier layer is formed by evaporation on the light-emitting layer except for the target pixel opening area; the material of the barrier layer includes a cathode patterned material, and the cathode material includes a metal material, so that the barrier layer and the cathode material repel each other, so as to prevent the cathode material from being deposited in the non-target pixel opening area; After depositing and forming the cathode, the method further comprises: The blocking layer and the light emitting layer are removed except for the target pixel opening area.

2. The method for preparing a display panel according to claim 1, characterized in that: The preparation method further comprises: repeating the steps of sequentially depositing a light-emitting layer and a cathode on the prefabricated plate to respectively produce at least two first sub-pixel units and second sub-pixel units with different light-emitting colors; When manufacturing the first sub-pixel unit, the pixel opening corresponding to the first sub-pixel unit is used as the target pixel opening; when manufacturing the second sub-pixel unit, the pixel opening corresponding to the second sub-pixel unit is used as the target pixel opening.

3. The method for preparing a display panel according to claim 2, characterized in that: The mask plate includes at least two types of a first mask plate and a second mask plate corresponding to the types of the sub-pixel units; When manufacturing the corresponding sub-pixel unit, the step of forming a barrier layer by evaporating on the light-emitting layer except for the target pixel opening area through a mask plate includes: Aligning the corresponding first mask or the second mask with the prefabricated plate so that the first mask or the second mask blocks the target pixel opening in a direction perpendicular to the prefabricated plate and exposes other pixel openings; The barrier layer material is evaporated to form the barrier layer on the light emitting layer except the target pixel opening area, so that the cathode is formed only on the light emitting layer in the target pixel opening.

4. The method for preparing a display panel according to claim 1, characterized in that: The step of removing the barrier layer and the light emitting layer except for the target pixel opening comprises: Making a protective layer on a side of the cathode away from the driving substrate; forming an anti-etching layer in the target pixel opening; Removing the protective layer, the barrier layer and the light-emitting layer except the target pixel opening by etching; The anti-etching layer is removed by etching.

5. The method for preparing a display panel according to claim 1, characterized in that: In the step of forming a barrier layer by evaporating on the light-emitting layer except for the target pixel opening area through a mask, the barrier layer is formed in the non-target pixel opening and on the side of the conductive isolation structure away from the driving substrate.

6. The method for preparing a display panel according to claim 5, characterized in that: In the step of removing the barrier layer and the light emitting layer except the target pixel opening region, a portion of the barrier layer located on the conductive isolation structure is retained.

7. The method for preparing a display panel according to claim 6, characterized in that: The step of removing the barrier layer and the light emitting layer except for the target pixel opening comprises: A protective layer is formed on a side of the cathode away from the driving substrate; the protective layer covers the pixel opening and the conductive isolation structure; An anti-etching layer is formed in the target pixel opening; the anti-etching layer covers the target pixel opening and the conductive isolation structure surrounding the target pixel opening; Removing the protective layer, the barrier layer and the light-emitting layer except the area of ​​the anti-etching layer by etching; The anti-etching layer is removed by etching.

8. The method for preparing a display panel according to claim 1, characterized in that: The material of the barrier layer includes a cathode patterning material, and the cathode material includes a metal material.

9. A display panel, characterized in that: The display panel is manufactured by the method for manufacturing a display panel according to any one of claims 1 to 8; the display panel comprises: Driver substrate; A pixel definition layer, disposed on the driving substrate and having a plurality of pixel openings; A conductive isolation structure protrudes from the pixel definition layer and surrounds the pixel opening; The sub-pixel unit comprises an anode, a light-emitting layer and a cathode stacked and arranged in the pixel opening; the cathode is arranged in contact with and conductive to the conductive isolation structure; Wherein, the sub-pixel unit includes at least two first sub-pixel units and second sub-pixel units with different luminous colors; A barrier layer is provided on a side of the conductive isolation structure away from the drive substrate. The barrier layer and the cathode material repel each other to prevent the cathode material from being deposited on the surface of the side of the conductive isolation structure away from the drive substrate.

10. A display device, characterized in that: The device comprises a circuit board and the display panel as claimed in claim 9, wherein the circuit board is electrically coupled to the display panel.

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