A sintering method of a yellow tungsten-titanium oxide target and a yellow tungsten-titanium oxide target

Abstract

This invention belongs to the field of target material preparation technology, and discloses a sintering method for a yellow tungsten oxide titanium target and the yellow tungsten oxide titanium target itself. The sintering method for the yellow tungsten oxide titanium target includes the following steps: Step 1: Heating the tungsten oxide titanium target blank to 800℃ at a heating rate of 0.5-1℃ / min, with continuous oxygen flow during the process at an oxygen flow rate of 15-20L / min; Step 2: Heating from 800℃ to 1150℃-1200℃ at a heating rate of 2-3℃ / min, holding at this temperature for 1-3 hours, with continuous oxygen flow during the process at an oxygen flow rate of 40-60L / min. This invention discloses a sintering method for a yellow tungsten oxide titanium target, employing a two-stage heating approach. In the first stage of heating, a lower heating rate and lower oxygen flow rate are used to improve the density of the target material; in the second stage of heating, a higher heating rate and higher oxygen flow rate are used to avoid deactivation of tungsten trioxide, which could lead to a change in the valence of tungsten.

Description

Technical Field

[0001] This invention relates to the field of target preparation technology, specifically to a sintering method for a yellow tungsten oxide titanium target and the yellow tungsten oxide titanium target itself. Background Technology

[0002] Sputtering targets are fundamental consumables in the magnetron sputtering process. They are used in large quantities, and their quality plays a crucial role in determining the performance of the thin film. Sputtering targets have a wide range of applications, including optical targets, display thin film targets, semiconductor targets, recording media targets, and superconducting targets. Among these, semiconductor targets, display targets, and recording media targets are currently the three most widely used.

[0003] To improve the thin film preparation rate and ensure the growth quality of the thin film, the sputtering target must meet certain performance requirements. In recent years, flat panel display technologies such as liquid crystal displays, active organic light-emitting diode displays, and flexible displays have developed rapidly, and the importance of thin film transistors (TFTs) as core components is self-evident. Among them, TFTs based on oxide semiconductors have attracted widespread attention due to their advantages such as high mobility, good electrical uniformity, high visible light transmittance, low preparation temperature, and low cost.

[0004] Tungsten oxide has attracted widespread attention for its applications in chemistry, mechanical sensors, selective catalysis, electrochemical industry, and environmental engineering. Tungsten trioxide (WO3) is an n-type semiconductor with a wide direct band gap (3.2 eV), exhibiting very high chemical stability, high electrical conductivity, and high temperature resistance. Studies have shown that crystalline WO3 has high chemical stability against dissolution during anodic oxidation, making it a promising electrode material for wastewater treatment. Furthermore, the photoactive crystal structure of WO3 thin films makes it suitable for ultraviolet photodetector applications.

[0005] Currently, in order to prepare high-quality WO3 thin films, existing technologies generally use tungsten oxide titanium targets for sputtering. One of the key technical points in preparing thin films is the quality of the target material.

[0006] Prior art 1: Chinese patent application 201710218606.6 discloses a preparation process for high-purity, low-density tungsten oxide target material and the tungsten oxide target material itself. The preparation steps include: 1) pressing: pressing tungsten oxide raw material powder into plate-shaped blocks using a molding press or a cold isostatic press; 2) calcination: placing the blocks obtained in step 1) into an oxygen atmosphere furnace for calcination treatment; 3) crushing: crushing the blocks after calcination in step 2), and passing the crushed powder through a 50-200 mesh sieve; 4) granulation and compaction: adding a molding agent to the powder after crushing in step 3), mixing evenly, and then pressing it into a mold using a molding press to obtain a blank; 5) sintering: placing the blank obtained in step 4) into an oxygen atmosphere sintering furnace for sintering treatment to obtain the tungsten oxide target material.

[0007] Existing technology 1 involves preparing a high-purity but low-density tungsten oxide target for the fabrication of high-quality tungsten oxide electrochromic films, which is a relatively good technical solution. Paragraph 0028 of its specification describes the sintering process: "5) Sintering: The green blank obtained in step 4) is placed in an oxygen atmosphere sintering furnace and sintered at 800-1200℃ and an oxygen flow rate of 30L / min for 1-5 hours to obtain the high-purity, low-density tungsten oxide target described in this invention." However, when using this technical solution to prepare a high-density tungsten oxide titanium target, it was found that the tungsten oxide in the prepared tungsten oxide titanium target was not yellow tungsten oxide, indicating that not all the tungsten oxide in the prepared target was converted into tungsten trioxide.

[0008] Therefore, the technical problem to be solved by the present invention is: how to prepare a yellow tungsten oxide titanium target for preparing WO3 thin films. Summary of the Invention

[0009] One of the objectives of this invention is to provide a sintering method for yellow tungsten titanium oxide targets. The tungsten titanium oxide targets sintered using this method are all yellow in appearance and have a uniform color, low electrical resistance, and effectively ensure the quality of the produced tungsten titanium oxide targets.

[0010] Another objective of this invention is to provide a yellow tungsten oxide titanium target material, wherein the target material is yellow and uniform in color, which can meet the downstream quality requirements for tungsten oxide titanium target materials.

[0011] To achieve the above objectives, the present invention provides a sintering method for a yellow tungsten oxide titanium target, comprising the following steps:

[0012] Step 1: Heat the tungsten oxide titanium target blank to 800℃ at a heating rate of 0.5-1℃ / min, and continuously purge oxygen during the process at a flow rate of 15-20L / min.

[0013] Step 2: Increase the temperature from 800℃ to 1150℃-1200℃ at a heating rate of 2-3℃ / min, hold for 1-3 hours, and continuously purge oxygen at a flow rate of 40-60L / min.

[0014] In the technical solution of the present invention, the tungsten oxide titanium target blank can be prepared by existing technology, such as cold isostatic pressing, hot isostatic pressing and other existing processes. The tungsten oxide titanium target blank prepared by the present invention can be sintered into yellow tungsten oxide titanium target material using the sintering method of the yellow tungsten oxide titanium target material of the present invention.

[0015] Preferably, the tungsten oxide titanium target blank is prepared by the following steps:

[0016] Step a: Prepare tungsten oxide-doped titanium oxide powder;

[0017] Step b: Tungsten oxide-doped titanium oxide powder is pressed and cold isostatically pressed to obtain tungsten oxide titanium target blank.

[0018] Specifically, the steps of cold isostatic pressing are as follows: after the molding is completed, the mold is placed in a soft sleeve and sealed. The sealed soft sleeve is then placed in a cold isostatic press and immersed in a liquid pressure medium. The mold is then pressed by high-pressure liquid injected by a high-pressure pump at a pressure of 360MPa-400MPa to obtain the target blank.

[0019] Furthermore, step a specifically includes the following steps:

[0020] Step a1: Weigh tungsten oxide powder and titanium oxide powder at a molar ratio of 90-94.8:10-5.2;

[0021] Step a2: Mix titanium dioxide powder with pure water and the first dispersant for pre-dispersion, and then grind to obtain the first slurry;

[0022] Step a3: Add tungsten oxide powder and a second dispersant to the first slurry for pre-dispersion, and then grind to obtain the second slurry;

[0023] Step a4: Add binder to the second slurry for pre-dispersion, and then grind to obtain the third slurry;

[0024] Step a5: Spray granulation of the third slurry to obtain tungsten oxide-doped titanium oxide powder.

[0025] Furthermore, the specific operation of step a2 is as follows: titanium oxide powder, pure water, and the first dispersant are added to a mixing tank and pre-dispersed at a speed of 60-200 r / min for 20-40 min, and then fed into a grinding mill and ground at a grinding speed of 1200-1800 r / min for 10-22 h to obtain a first slurry with a solid content of 60-70%; wherein, the first dispersant accounts for 1-5% of the total mass of the added titanium oxide powder, pure water, and the first dispersant.

[0026] Furthermore, the specific operation of step a3 is as follows: tungsten oxide powder and a second dispersant are added to the first slurry and pre-dispersed at a speed of 60-200 r / min for 20-40 min, and then ground in a grinding mill at a grinding speed of 1200-1800 r / min for 8-15 h to obtain a second slurry with a solid content of 60-70%; wherein, the second dispersant accounts for 1-15% of the total mass of the added tungsten oxide powder and the second dispersant.

[0027] Furthermore, the specific operation of step a4 is as follows: add a binder to the second slurry and pre-disperse it at a speed of 60-200 r / min for 20-40 min, then put it into a grinding mill and grind it at a grinding speed of 1200-1800 r / min for 2-4 h to obtain the third slurry; wherein, the binder accounts for 5-15% of the total mass of the added tungsten oxide powder, titanium oxide powder and binder.

[0028] Furthermore, the adhesive is at least one of polyvinyl alcohol, polyvinyl butyral, or a mixture of polyvinyl alcohol and polyethylene glycol.

[0029] Furthermore, the first dispersant and the second dispersant are one of polyvinylpyrrolidone, sodium dodecylbenzenesulfonate, and sodium hexadecylbenzenesulfonate.

[0030] Furthermore, the specific operation of step a5 is as follows: the third slurry is fed into the spray drying tower for spray granulation, and then mixed and sieved in sequence to obtain tungsten oxide-doped titanium oxide powder; wherein the outlet air temperature is 70-85℃ and the atomizer frequency is 120Hz.

[0031] A yellow tungsten oxide titanium target material is prepared by the above-mentioned sintering method for yellow tungsten oxide titanium target materials.

[0032] Beneficial effects

[0033] Compared with the prior art, the present invention has at least the following advantages:

[0034] (1) This invention discloses a sintering method for a yellow tungsten oxide titanium target, which adopts a two-stage heating method. In the first stage of heating, the density of the target is improved by using a lower heating rate and a lower oxygen flow rate. In the second stage of heating, a higher heating rate and a higher oxygen flow rate are adopted to avoid the deactivation of tungsten trioxide and the resulting change in the valence of tungsten.

[0035] (2) By adopting a higher heating rate and a higher oxygen flow rate in the second heating stage to sinter tungsten oxide titanium target material, the present invention controls a shorter holding time, which can effectively avoid the situation where tungsten trioxide deactivation caused by excessive holding time leads to a change in the price of tungsten. Attached Figure Description

[0036] The present invention will be further described below with reference to the accompanying drawings and embodiments;

[0037] Figure 1 This is a product appearance drawing of Embodiment 3 of the present invention;

[0038] Figure 2 This is a product appearance drawing of Comparative Example 1 of the present invention;

[0039] Figure 3 This is a product appearance drawing of Comparative Example 2 of the present invention;

[0040] Figure 4 This is a product appearance drawing of Comparative Example 5 of the present invention. Detailed Implementation

[0041] The present invention will be further described below with reference to embodiments, but this does not constitute any limitation on the present invention. Any limited modifications made within the scope of the claims of the present invention are still within the scope of the claims of the present invention.

[0042] To illustrate the technical content of the present invention in detail, the following description is provided in conjunction with the embodiments.

[0043] In the following examples and comparative examples, the tungsten oxide titanium target blanks were all prepared by the following steps:

[0044] Step a1: Weigh tungsten oxide powder and titanium oxide powder at a molar ratio of 90:10;

[0045] Step a2: Add titanium dioxide powder, pure water, and polyvinylpyrrolidone to a mixing tank and pre-disperse at 100 r / min for 30 min. Then, grind the mixture in a grinding mill at 1500 r / min for 12 h to obtain a first slurry with a solid content of 70%. Among them, polyvinylpyrrolidone accounts for 4% of the total mass of titanium dioxide powder, pure water, and polyvinylpyrrolidone.

[0046] Step a3: Add tungsten oxide powder and polyvinylpyrrolidone to the first slurry and pre-disperse at 100 r / min for 30 min. Then grind it in a grinding mill at 1500 r / min for 8 h to obtain a second slurry with a solid content of 65%. Among them, polyvinylpyrrolidone accounts for 4% of the total mass of the added tungsten oxide powder and polyvinylpyrrolidone.

[0047] In step a4, polyvinyl alcohol is added to the second slurry and pre-dispersed at 100 r / min for 30 min. Then, it is fed into a grinding mill and ground at 1500 r / min for 2 h to obtain the third slurry. The polyvinyl alcohol accounts for 10% of the total mass of the added tungsten oxide powder, titanium oxide powder and polyvinyl alcohol.

[0048] Step a5: The third slurry is fed into the spray drying tower for spray granulation, and then mixed and sieved to obtain tungsten oxide-doped titanium oxide powder; wherein the outlet air temperature is 75℃ and the atomizer frequency is 120Hz.

[0049] Step b: Tungsten oxide-doped titanium oxide powder is pressed and cold isostatically pressed to obtain tungsten oxide titanium target blank.

[0050] Specifically, the steps of cold isostatic pressing are as follows: after the molding is completed, the mold is placed in a soft sleeve and sealed. The sealed soft sleeve is then placed in a cold isostatic press and immersed in a liquid pressure medium. The mold is then pressed by high-pressure liquid injected by a high-pressure pump at a pressure of 360MPa-400MPa to obtain the target blank.

[0051] It should be noted that the tungsten oxide-doped titanium oxide powder and tungsten oxide titanium target blank of the present invention can be prepared not only by the above steps, but also by other existing technologies; the tungsten oxide titanium target blanks prepared by other existing technologies can all be used to prepare yellow tungsten oxide titanium target materials by the sintering method of the present invention.

[0052] Example 1

[0053] A yellow tungsten oxide titanium target material is obtained by sintering using the following steps:

[0054] Step 1: Heat the tungsten oxide titanium target blank to 800℃ at a heating rate of 0.5℃ / min, and continuously purge oxygen during the process at a flow rate of 15L / min;

[0055] Step 2: The temperature was increased from 800℃ to 1150℃ at a heating rate of 3℃ / min, and held for 2 hours to obtain a yellow tungsten titanium oxide target. Oxygen was continuously introduced during the process at a flow rate of 40L / min.

[0056] Example 2

[0057] A yellow tungsten oxide titanium target material is obtained by sintering using the following steps:

[0058] Step 1: Heat the tungsten oxide titanium target blank to 800℃ at a heating rate of 0.5℃ / min, and continuously purge oxygen during the process at a flow rate of 15L / min;

[0059] Step 2: The temperature was increased from 800℃ to 1200℃ at a heating rate of 2℃ / min, and held for 2 hours to obtain a yellow tungsten titanium oxide target. Oxygen was continuously introduced during the process at a flow rate of 60L / min.

[0060] Example 3

[0061] A yellow tungsten oxide titanium target material is obtained by sintering using the following steps:

[0062] Step 1: Heat the tungsten oxide titanium target blank to 800℃ at a heating rate of 1℃ / min, and continuously pass oxygen through it during the process at a flow rate of 15L / min.

[0063] Step 2: The temperature was increased from 800℃ to 1180℃ at a heating rate of 3℃ / min, and held for 3 hours to obtain a yellow tungsten titanium oxide target. Oxygen was continuously introduced during the process at a flow rate of 55L / min.

[0064] Example 4

[0065] A yellow tungsten oxide titanium target material is obtained by sintering using the following steps:

[0066] Step 1: Heat the tungsten oxide titanium target blank to 800℃ at a heating rate of 1℃ / min, and continuously pass oxygen through it during the process at a flow rate of 20L / min.

[0067] Step 2: The temperature was increased from 800℃ to 1180℃ at a heating rate of 3℃ / min, and held for 3 hours to obtain a yellow tungsten titanium oxide target. Oxygen was continuously introduced during the process at a flow rate of 55L / min.

[0068] Example 5

[0069] A yellow tungsten oxide titanium target material is obtained by sintering using the following steps:

[0070] Step 1: Heat the tungsten oxide titanium target blank to 800℃ at a heating rate of 1℃ / min, and continuously pass oxygen through it during the process at a flow rate of 20L / min.

[0071] Step 2: The temperature was increased from 800℃ to 1180℃ at a heating rate of 3℃ / min, and held for 3 hours to obtain a yellow tungsten titanium oxide target. Oxygen was continuously introduced during the process at a flow rate of 40L / min.

[0072] Comparative Example 1

[0073] A yellow tungsten oxide titanium target material is obtained by sintering using the following steps:

[0074] Step 1: The tungsten oxide titanium target blank is heated to 1180℃ at a heating rate of 1℃ / min and held at that temperature for 3 hours to obtain a yellow tungsten oxide titanium target material. Oxygen is continuously introduced during the process at a flow rate of 55L / min.

[0075] Comparative Example 2

[0076] It is largely the same as Example 3, except that the heat preservation time in step 2 is 5 hours.

[0077] Comparative Example 3

[0078] It is largely the same as Example 3, except that the heating rate in step 1 is 3°C / min.

[0079] Comparative Example 4

[0080] It is largely the same as Example 3, except that the heating rate in step 2 is 0.5℃ / min.

[0081] Comparative Example 5

[0082] It is largely the same as Example 3, except that the oxygen flow rate in step 2 is 20 L / min.

[0083] Comparative Example 6

[0084] It is largely the same as Example 3, except that the oxygen flow rate in step 1 is 30 L / min.

[0085] Performance testing

[0086] Test method:

[0087] Density was measured using Archimedes' method of displacement.

[0088] Resistance was measured using a four-probe method.

[0089] The targets prepared in Examples 1-5 and Comparative Examples 1-6 were tested according to the above test methods. The results are shown in Table 1 and Appendix. Figure 1-4 As shown, where Figure 1 This is a product image from Example 3. Figure 2 For example, the product image of Comparative Example 1 Figure 3 The product image is for Comparative Example 2. Figure 4 This is a product image for Comparative Example 5;

[0090] Table 1. Performance data of the target materials prepared in Examples 1-5 and Comparative Examples 1-6.

[0091] Target density g / cm 3 ]]> resistance mΩ·cm Target appearance Example 1 6.71 1.4663 The target material is yellow and has a uniform color. Example 2 6.74 1.4386 The target material is yellow and has a uniform color. Example 3 6.79 1.3892 The target material is yellow and has a uniform color. Example 4 6.82 1.2940 The target material is yellow and has a uniform color. Example 5 6.80 1.3048 The target material is yellow and has a uniform color. Comparative Example 1 6.26 1.569 The target material is pale yellow but has some green spots. Comparative Example 2 6.76 686.358 The target material is dark green. Comparative Example 3 6.14 1.6973 The target material is yellow. Comparative Example 4 6.73 639.4897 The target material is dark green. Comparative Example 5 6.77 796.359 The target material is dark green with black spots. Comparative Example 6 6.32 1.6984 The target material is pale yellow but has some green spots.

[0092] According to the results in Table 1:

[0093] As can be seen from Examples 1-5, the tungsten oxide titanium target obtained by sintering using the sintering method of the present invention can effectively ensure that the components in the target are all yellow tungsten oxide, guarantee the valence state of tungsten, and effectively improve the density of the target and reduce the resistance of the target.

[0094] As can be seen from Comparative Example 1, the sintering method without the two-stage heating of the present invention will result in some green spots on the target material, which means that the tungsten valence state has changed, thus affecting the quality of the target material. It is speculated that this is caused by the low density of the target material in the early stage of sintering. In Comparative Example 1, too much oxygen was introduced in the early stage of sintering, which affected the densification process and increased the probability of oxygen vacancies in the target material, leading to the change in the tungsten valence state.

[0095] According to the data comparison between Example 3 and Comparative Example 2, when the heat preservation time is too long, it will also cause the tungsten oxide in the tungsten oxide titanium target to deactivate and cause a change in the valence state of tungsten. The tungsten oxide grains in the target produced are not yellow tungsten trioxide grains.

[0096] According to the data comparison between Example 3 and Comparative Example 3, when the heating rate in step 1 is too fast, the target material density will decrease significantly.

[0097] According to the data comparison between Example 3 and Comparative Example 4, when the heating rate in step 2 is too slow, it will also cause the tungsten oxide in the tungsten oxide titanium target to deactivate and cause a change in the valence state of tungsten. The tungsten oxide grains in the target produced are not yellow tungsten trioxide grains. The possible reason is that the heating rate is too fast, which leads to a decrease in the density of the target and affects the densification process of the target, thereby increasing the probability of tungsten valence state change.

[0098] According to the data comparison of Example 3 and Comparative Examples 5 and 6, it can be seen that when the oxygen flow rate in step 1 and the oxygen flow rate in step 2 are not within the technical solution of this invention, the produced target material is not a yellow tungsten titanium oxide target material. The reason is that when the oxygen flow rate in step 2 is less than the range of this solution, the target material is not sintered in a rich oxygen atmosphere at high temperature, which causes the target material to lose oxygen and affects the color of the target material. When the oxygen flow rate in step 1 is less than the range of this solution, it also affects the color of the target material. When it is greater than the range of this solution, the density of the target material will decrease. The reason is that if the oxygen flow rate is too high, the gas and other substances inside the target material cannot be effectively removed and remain inside the target material, affecting the densification process and thus increasing the probability of tungsten valence state change.

[0099] The embodiments presented herein are merely selected implementations based on combinations of all possible embodiments. The appended claims should not be limited to the embodiments described herein. Some numerical ranges used in the claims include sub-ranges within them, and variations within these ranges should also be covered by the appended claims.

Claims

1. A sintering method for a yellow tungsten oxide titanium target, characterized in that, Includes the following steps: Step 1: Heat the tungsten oxide titanium target blank to 800℃ at a heating rate of 0.5-1℃ / min, and continuously purge oxygen during the process at an oxygen flow rate of 15-20L / min; Step 2: Increase the temperature from 800℃ to 1150℃-1200℃ at a heating rate of 2-3℃ / min, hold for 1-3 hours, and continuously purge oxygen at a flow rate of 40-60L / min.

2. The sintering method for the yellow tungsten oxide titanium target material according to claim 1, characterized in that, The tungsten oxide titanium target blank is prepared by the following steps: Step a: Prepare tungsten oxide-doped titanium oxide powder; Step b: Tungsten oxide-doped titanium oxide powder is pressed and cold isostatically pressed to obtain tungsten oxide titanium target blank.

3. The sintering method for the yellow tungsten oxide titanium target material according to claim 2, characterized in that, Step a specifically includes the following steps: Step a1: Weigh tungsten oxide powder and titanium oxide powder at a molar ratio of 90-94.8:10-5.2; Step a2: Mix titanium dioxide powder with pure water and the first dispersant for pre-dispersion, and then grind to obtain the first slurry; Step a3: Add tungsten oxide powder and a second dispersant to the first slurry for pre-dispersion, and then grind to obtain the second slurry; Step a4: Add binder to the second slurry for pre-dispersion, and then grind to obtain the third slurry; Step a5: Spray granulation of the third slurry to obtain tungsten oxide-doped titanium oxide powder.

4. The sintering method for the yellow tungsten oxide titanium target material according to claim 3, characterized in that, The specific operation of step a2 is as follows: titanium oxide powder, pure water, and the first dispersant are added to a mixing tank and pre-dispersed at a speed of 60-200 r / min for 20-40 min, and then fed into a grinding mill and ground at a grinding speed of 1200-1800 r / min for 10-22 h to obtain a first slurry with a solid content of 60-70%; wherein, the first dispersant accounts for 1-5% of the total mass of the added titanium oxide powder, pure water, and the first dispersant.

5. The sintering method for the yellow tungsten oxide titanium target material according to claim 3, characterized in that, The specific operation of step a3 is as follows: tungsten oxide powder and a second dispersant are added to the first slurry and pre-dispersed at a speed of 60-200 r / min for 20-40 min, and then ground in a grinding mill at a grinding speed of 1200-1800 r / min for 8-15 h to obtain a second slurry with a solid content of 60-70%; wherein, the second dispersant accounts for 1-15% of the total mass of the added tungsten oxide powder and the second dispersant.

6. The sintering method for the yellow tungsten oxide titanium target material according to claim 3, characterized in that, The specific operation of step a4 is as follows: add binder to the second slurry and pre-disperse it at a speed of 60-200 r / min for 20-40 min, then put it into a grinding mill and grind it at a grinding speed of 1200-1800 r / min for 2-4 h to obtain the third slurry; wherein, the binder accounts for 5-15% of the total mass of the added tungsten oxide powder, titanium oxide powder and binder.

7. The sintering method for the yellow tungsten oxide titanium target material according to claim 6, characterized in that, The adhesive is at least one of polyvinyl alcohol, polyvinyl butyral, or a mixture of polyvinyl alcohol and polyethylene glycol.

8. The sintering method for the yellow tungsten oxide titanium target material according to any one of claims 3-5, characterized in that, The first dispersant and the second dispersant are one of polyvinylpyrrolidone, sodium dodecylbenzenesulfonate, and sodium hexadecylbenzenesulfonate.

9. The sintering method for the yellow tungsten oxide titanium target material according to claim 3, characterized in that, The specific operation of step a5 is as follows: the third slurry is fed into the spray drying tower for spray granulation, and then mixed and sieved in sequence to obtain tungsten oxide-doped titanium oxide powder; wherein the outlet air temperature is 70-85℃ and the atomizer frequency is 120Hz.

10. A yellow tungsten oxide titanium target material, characterized in that, It was prepared using the sintering method of the yellow tungsten oxide titanium target as described in any one of claims 1-9.

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