A temperature control method and system for a CVD reactor

Abstract

The present invention discloses a temperature control method and system for a CVD reactor. The temperature control method for the CVD reactor comprises obtaining the current top temperature of each substrate in the CVD reactor, the preset top average temperature, the current bottom average temperature of a substrate carrier, the number of substrates accommodated in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate; determining the bottom heating temperature of the substrate carrier according to each current top temperature, the preset top average temperature, the current bottom average temperature, and the number of substrates accommodated in the CVD reactor, and controlling the CVD reactor to heat the substrate carrier at the bottom heating temperature; determining the adjusted component coefficient of each heat transfer gas corresponding to each substrate according to the preset top average temperature of each substrate, the current top temperature, the number of substrates accommodated in the CVD reactor, the current bottom average temperature, and each current component coefficient, and controlling the CVD reactor to adjust the component coefficient of each heat transfer gas by adjusting the component coefficient.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a temperature control method and system for a CVD reactor. Background Art

[0002] Chemical Vapor Deposition (CVD) reactor is a device that can realize film coating on semiconductor substrates. When producing epitaxial wafers, the existing CVD reactor heats the base in the CVD reactor through a heating device, and the heat is transferred to the substrate through the base and the heat conduction gas between the base and the substrate substrate to adjust the temperature of the substrate substrate. When the temperature is appropriate, a corresponding semiconductor film layer is formed on the substrate substrate.

[0003] In the process of coating semiconductor substrates such as substrates in a CVD reactor, the type of gas and airflow inside the reactor have a great influence on the effect of film deposition. In addition, temperature distribution is also an important factor affecting film formation. The existing method of adjusting the overall temperature of the substrate itself in the reaction chamber is as follows: based on a mapping table stored in advance, the heating temperature corresponding to the current temperature of the substrate is determined as the heating temperature of the heater, but this method requires a large amount of data to be stored in advance, and when the current temperature detected has no corresponding data in the mapping table, the control accuracy of the substrate temperature is low. Summary of the invention

[0004] The invention provides a temperature control method and system for a CVD reactor, so as to improve the control accuracy and control reliability of the temperature of each substrate in the CVD reactor.

[0005] In a first aspect, the present invention provides a temperature control method for a CVD reactor, comprising:

[0006] Obtaining the current top temperature of each substrate in the CVD reactor, the preset top average temperature, the current bottom average temperature of the substrate carrier, the number of substrates accommodated in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate;

[0007] Determining a bottom heating temperature of the substrate carrier according to each of the current top temperature, the preset top average temperature, the current bottom average temperature, and the substrate accommodating quantity of the CVD reactor, and controlling the CVD reactor to heat the substrate carrier at the bottom heating temperature;

[0008] According to the preset top average temperature of each substrate, the current top temperature, the number of substrates accommodated by the CVD reactor, the current bottom average temperature and the current component coefficients, the adjusted component coefficient of each heat transfer gas corresponding to each substrate is determined, and the CVD reactor is controlled to adjust the component coefficient of each heat transfer gas with the adjusted component coefficient.

[0009] Optionally, the bottom heating temperature of the substrate carrier is determined according to the current top temperature, the preset top average temperature, the current bottom average temperature and the number of substrates accommodated by the CVD reactor, including: determining the current top average temperature according to the current top temperature and the number of substrates accommodated by the CVD reactor; determining the bottom heating temperature of the substrate carrier according to the current top average temperature, the preset top average temperature and the current bottom average temperature.

[0010] Optionally, the bottom heating temperature of the substrate carrier is determined according to the current top average temperature, the preset top average temperature and the current bottom average temperature, including: determining the current top temperature difference according to the current top average temperature and the preset top average temperature; determining the bottom heating temperature according to the current top temperature difference and the current bottom average temperature.

[0011] Optionally, the adjusted component coefficient of each of the heat transfer gases corresponding to each of the substrates is determined based on the preset top average temperature of each of the substrates, the current top temperature, the number of substrates accommodated by the CVD reactor, the current bottom average temperature and the current component coefficients, including: determining the current top average temperature based on the current top temperature and the number of substrates accommodated by the CVD reactor; judging whether the absolute value of the difference between the preset top average temperature and the current top average temperature is less than or equal to the preset difference; if so, determining the adjusted component coefficient of each of the heat transfer gases corresponding to each of the substrates based on the current top temperature of each of the substrates, the preset top average temperature, the current bottom average temperature and the current component coefficients.

[0012] Optionally, the adjusted component coefficient of each heat transfer gas corresponding to each substrate is determined according to the current top temperature of each substrate, the preset top average temperature, the current bottom average temperature and the current component coefficients, including: determining the top temperature ratio according to the current top temperature of the substrate, the preset top average temperature and the current bottom average temperature; and determining the adjusted component coefficient of each heat transfer gas corresponding to the substrate in turn according to the top temperature ratio and the current component coefficient of each heat transfer gas corresponding to the substrate.

[0013] Optionally, a top temperature ratio is determined based on the current top temperature of the substrate, the preset top average temperature and the current bottom average temperature, including: determining a first top parameter based on the current top temperature of the substrate and the current bottom average temperature; determining a second top parameter based on the preset top average temperature of the substrate and the current bottom average temperature; and determining the top temperature ratio based on the first top parameter and the second top parameter.

[0014] Optionally, the adjusted component coefficient of each heat transfer gas corresponding to the substrate is determined in sequence according to the top temperature ratio and the current component coefficient of each heat transfer gas corresponding to the substrate, including: taking the heat transfer gas to be adjusted as the heat transfer gas to be adjusted; determining the adjusted component coefficient of the heat transfer gas to be adjusted according to the top temperature ratio and the current component coefficient of the heat transfer gas to be adjusted; taking the next heat transfer gas to be adjusted as the heat transfer gas to be adjusted, and returning to execute the step of determining the adjusted component coefficient of the heat transfer gas to be adjusted according to the top temperature ratio and the current component coefficient of the heat transfer gas to be adjusted, until the adjusted component coefficient of each heat transfer gas is obtained.

[0015] Optionally, before obtaining the current top temperature of each substrate in the CVD reactor, the preset top average temperature, the current bottom average temperature of the substrate carrier and the number of substrates accommodated in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate, it also includes: obtaining the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportional coefficient of each heat transfer gas in the CVD reactor; determining the adjustment proportional coefficient of each heat transfer gas according to the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportional coefficient of each heat transfer gas, and controlling the CVD reactor to provide each heat transfer gas with the adjusted proportional coefficient.

[0016] Optionally, the adjustment proportional coefficient of each of the heat-conducting gases is determined according to the current top cover temperature, the current water-cooling temperature, the preset top cover temperature and the current proportional coefficient of each of the heat-conducting gases, including: determining a first adjustment parameter according to the current top cover temperature and the current water-cooling temperature; determining a second adjustment parameter according to the preset top cover temperature and the current water-cooling temperature; determining a top cover temperature ratio according to the first adjustment parameter and the second adjustment parameter; taking the heat-conducting gas to be adjusted as the heat-conducting gas to be adjusted; determining the adjustment proportional coefficient of the heat-conducting gas to be adjusted according to the top cover temperature ratio and the current proportional coefficient of the heat-conducting gas to be adjusted; taking the next heat-conducting gas to be adjusted as the heat-conducting gas to be adjusted, and returning to execute the step of determining the adjustment proportional coefficient of the heat-conducting gas to be adjusted according to the top cover temperature ratio and the current proportional coefficient of the heat-conducting gas to be adjusted, until the adjustment proportional coefficient of each of the heat-conducting gases is obtained.

[0017] In a second aspect, the present invention provides a temperature control system for a CVD reactor, comprising: a substrate carrier, a heating device, a heat transfer gas device, a top temperature detection device, a bottom temperature detection device and a controller;

[0018] The substrate stage is used to place a substrate, the heating device is located at one side of the substrate stage, the heat transfer gas device is used to provide heat transfer gas to the substrate stage, the top temperature detection device is used to detect the top temperature of each substrate in the CVD reactor, and the bottom temperature detection device is used to detect the bottom temperature of the substrate stage in the CVD reactor;

[0019] The controller is electrically connected to the heating device, the heat transfer gas device, the top temperature detection device and the bottom temperature detection device respectively, and the controller is used to execute the temperature control method described in the first aspect.

[0020] The technical solution provided by the present invention obtains the current top temperature of each substrate in the CVD reactor, the preset top average temperature, the current bottom average temperature of the substrate carrier and the number of substrates accommodated by the CVD reactor, as well as the current component coefficient of each heat transfer gas corresponding to each substrate, so as to determine the bottom heating temperature required for the average temperature of the top of the substrate to reach the preset top average temperature according to each current top temperature, the preset top average temperature, the current bottom average temperature and the number of substrates accommodated by the CVD reactor, so as to control the CVD reactor to heat the substrate carrier with the bottom heating temperature, so as to adjust the temperature of the bottom of the substrate, and then adjust the temperature of the top of the substrate to reduce the difference between the average temperature of the top of the substrate and the preset top average temperature, thereby reducing the average temperature difference of the top of the substrate in different CVD reactors, improving the control accuracy of the CVD reactor on the substrate temperature, and improving the consistency and reliability of preparing semiconductor film layers by different CVD reactors. Then, the adjusted component coefficients of the heat transfer gases corresponding to the substrates are determined according to the preset top average temperature of each substrate, the current top temperature, the number of substrates accommodated by the CVD reactor, the current bottom average temperature and the current component coefficients, and the CVD reactor is controlled to adjust the component coefficients of the heat transfer gases to make the current top temperature of each substrate closer to the preset top average temperature, further reducing the temperature difference of the tops of the substrates in the CVD reactor and improving the consistency of the preparation of the film layers of each substrate by the CVD reactor. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A flow chart of a first temperature control method for a CVD reactor provided in an embodiment of the present invention;

[0022] Figure 2 A flow chart of a second temperature control method for a CVD reactor provided in an embodiment of the present invention;

[0023] Figure 3 A flow chart of a third temperature control method for a CVD reactor provided in an embodiment of the present invention;

[0024] Figure 4 A flow chart of a fourth temperature control method for a CVD reactor provided in an embodiment of the present invention;

[0025] Figure 5 A flow chart of a fifth temperature control method for a CVD reactor provided in an embodiment of the present invention;

[0026] Figure 6 A schematic structural diagram of a temperature control system of a CVD reactor provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0027] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0028] Figure 1 The flowchart of the first temperature control method of a CVD reactor provided in an embodiment of the present invention is applicable to the case of adjusting the temperature in a CVD reactor. The method can be executed by the temperature control system of the CVD reactor provided in an embodiment of the present invention. The temperature control system of the CVD reactor can be implemented in the form of hardware and / or software. Figure 1 As shown, the temperature control method of the CVD reactor includes:

[0029] S101, obtaining the current top temperature of each substrate in the CVD reactor, the preset top average temperature, the current bottom average temperature of the substrate carrier, the number of substrates accommodated in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate.

[0030] Among them, the CVD reactor can deposit a thin film on the surface of a semiconductor substrate such as a substrate, and the substrate includes materials such as a wafer. The current top temperature of each substrate means the current temperature of the top of each substrate or the current temperature of the upper surface of each substrate, the current bottom average temperature of the substrate carrier means the current temperature of the bottom of the substrate carrier, the preset top average temperature of each substrate means the preset average temperature of the top of each substrate, and the substrate capacity of the CVD reactor means the number of substrates that can be accommodated in the CVD reactor.

[0031] It should be noted that, in order to facilitate the control of the temperature of the substrate, an air flow gap is usually set between the substrate carrier on which the substrate is placed and the substrate, and the temperature of the substrate is adjusted by adjusting the thermal conductivity of the heat transfer gas located in the air flow gap. The heat transfer gas includes hydrogen, nitrogen, helium or argon, etc., which can be set according to actual needs and is not specifically limited here.

[0032] Specifically, when the CVD reactor is working, one or more substrates are included in the CVD reactor, and the temperature in the radial direction of each substrate will affect the thin film deposition. Since the heat source temperature of the CVD reactor is transferred from the bottom of the substrate to the substrate, the parameters related to the substrate temperature can be obtained and the current temperature of the substrate can be adjusted. The current top temperature of each substrate can be obtained by a temperature sensor or other temperature measuring device located on the upper surface side of the substrate. The current bottom average temperature of the substrate carrier can be obtained by a temperature sensor or other temperature measuring device located on the lower surface side of the substrate carrier. The preset top average temperature can be a temperature value preset by the staff according to the actual preparation requirements of the substrate. After the CVD reactor is prepared, the number of substrates that can be accommodated in the CVD reactor has been determined, and the number of substrates that can be accommodated in the CVD reactor can be obtained by the nameplate of the CVD reactor. The current component coefficient of each heat transfer gas corresponding to each substrate can be obtained by the device that provides heat transfer gas in the CVD reactor, and the current component coefficient represents the intake volume ratio of each heat transfer gas.

[0033] S102. Determine the bottom heating temperature of the substrate carrier according to the current top temperature, the preset top average temperature, the current bottom average temperature and the number of substrates that can be accommodated by the CVD reactor, and control the CVD reactor to heat the substrate carrier at the bottom heating temperature.

[0034] The bottom heating temperature of the substrate carrier represents the temperature that needs to be provided for the bottom of the substrate carrier.

[0035] Specifically, the current average temperature of the top of the substrate can be calculated according to each current top temperature and the number of substrates that can be accommodated by the CVD reactor. The current top temperature difference is obtained by performing a difference calculation between the preset top average temperature and the current average temperature of the top of the substrate. The bottom heating temperature of the substrate is related to the current top temperature difference and the current bottom average temperature of the substrate carrier. The current top temperature difference and the current bottom average temperature of the substrate carrier can be substituted into the calculation formula of the bottom heating temperature for calculation to determine the bottom heating temperature, and then the heat source in the CVD reactor is controlled to provide equipment to heat the substrate carrier at the bottom heating temperature to control the bottom temperature and top temperature of the substrate, thereby adjusting the overall temperature of the substrate. When multiple CVD reactors are used to simultaneously prepare the same thin film for multiple semiconductor substrates, the above method can be used to improve the consistency of the reaction temperature in each CVD reactor, thereby improving the consistency of the prepared thin film and improving the preparation reliability of the CVD reactor.

[0036] S103. Determine the adjusted component coefficient of each heat transfer gas corresponding to each substrate according to the preset top average temperature of each substrate, the current top temperature, the substrate capacity of the CVD reactor, the current bottom average temperature and each current component coefficient, and control the CVD reactor to adjust the component coefficient of each heat transfer gas by adjusting the component coefficient.

[0037] The adjusted component coefficient of the heat transfer gas indicates the ratio of the intake volume of the heat transfer gas to the total intake volume of the heat transfer gas after the heat transfer gas is adjusted. Each heat transfer gas located at the bottom of the same substrate can transfer the heat energy provided by the heat source providing device to the substrate. When the component coefficients of each heat transfer gas are different, the thermal conductivity of each heat transfer gas is different, and the thermal conductivity effect of the mixed gas composed of each heat transfer gas is also different.

[0038] Specifically, the top temperature of the substrate is controlled by controlling the heat source in the CVD reactor to provide the device for heating at the bottom heating temperature, but this method can only roughly adjust the temperature of the substrate surface, that is, the current top temperature of the substrate surface and the preset top average temperature still have a certain difference. The current average temperature of the substrate top can be calculated according to the current top temperature of each substrate and the number of substrates accommodated by the CVD reactor. When the difference between the current average temperature of the substrate top and the preset top average temperature is small, the current top temperature, the current bottom average temperature and the preset top average temperature can be substituted into the calculation formula of the adjusted component coefficient according to the calculation formula of the adjusted component coefficient and the top temperature, the bottom average temperature and the preset top average temperature. The adjusted component coefficient of each heat transfer gas can be obtained, and the device for providing heat transfer gas in the CVD reactor is controlled to adjust the component coefficient of each heat transfer gas to adjust the transmission efficiency of heat energy transmitted to each substrate, thereby improving the control accuracy and control efficiency of the substrate temperature. In this way, by adjusting the heat transfer performance of the heat transfer gas corresponding to each substrate, the temperature difference on the top of different substrates can be reduced, thereby reducing the overall temperature difference of the substrate, thereby improving the consistency and reliability of the CVD reactor in preparing the same thin film on different substrate surfaces.

[0039] The technical solution of the present invention obtains the current top temperature of each substrate in the CVD reactor, the preset top average temperature, the current bottom average temperature of the substrate carrier and the number of substrates accommodated by the CVD reactor, as well as the current component coefficient of each heat transfer gas corresponding to each substrate, so as to determine the bottom heating temperature required for the average temperature of the top of the substrate to reach the preset top average temperature according to the current top temperature, the preset top average temperature, the current bottom average temperature and the number of substrates accommodated by the CVD reactor, so as to control the CVD reactor to heat the substrate carrier with the bottom heating temperature, so as to adjust the temperature of the bottom of the substrate, and then adjust the temperature of the top of the substrate to reduce the difference between the average temperature of the top of the substrate and the preset top average temperature, thereby reducing the average temperature difference of the top of the substrate in different CVD reactors, improving the control accuracy of the CVD reactor on the substrate temperature, and improving the consistency and reliability of preparing semiconductor film layers by different CVD reactors. Then, the adjusted component coefficient of each heat transfer gas corresponding to each substrate is determined according to the preset top average temperature of each substrate, the current top temperature, the number of substrates accommodated by the CVD reactor, the current bottom average temperature and the current component coefficients, and the CVD reactor is controlled to adjust the component coefficient of each heat transfer gas by adjusting the component coefficient, so that the current top temperature of each substrate is closer to the preset top average temperature, further reducing the temperature difference at the top of each substrate in the CVD reactor, and improving the consistency of the film preparation of each substrate by the CVD reactor.

[0040] Based on the above embodiments, this embodiment describes the situation of determining the bottom heating temperature of the substrate carrier according to the current top temperature, the preset top average temperature, the current bottom average temperature and the number of substrates accommodated in the CVD reactor. Figure 2 A flow chart of a second temperature control method for a CVD reactor provided in an embodiment of the present invention, such as Figure 2 As shown, the temperature control method of the CVD reactor includes:

[0041] S201, obtaining the current top temperature of each substrate in the CVD reactor, the preset top average temperature, the current bottom average temperature of the substrate carrier, the number of substrates accommodated in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate.

[0042] S202, determining the current top average temperature according to each current top temperature and the number of substrates accommodated by the CVD reactor.

[0043] Specifically, the ratio of the sum of the current top temperatures to the number of substrates that can be accommodated in the CVD reactor is used as the current top average temperature. For example, if the number of substrates that can be accommodated in the CVD reactor is 5, the current top temperature of the first substrate is t1, the current top temperature of the second substrate is t2, the current top temperature of the third substrate is t3, the current top temperature of the fourth substrate is t4, and the current top temperature of the fifth substrate is t5, then the current top average temperature is (t1+t2+t3+t4+t5) / 5.

[0044] S203, determining the bottom heating temperature of the substrate carrier according to the current top average temperature, the preset top average temperature and the current bottom average temperature.

[0045] Specifically, the bottom heating temperature is related to the current top average temperature, the preset top average temperature and the current bottom average temperature. The current top average temperature, the preset top average temperature and the current bottom average temperature can be substituted into the calculation formula of the bottom heating temperature to calculate the bottom heating temperature. The calculation formula of the bottom heating temperature can be obtained by multiple tests and the like, and is not specifically limited here.

[0046] In an optional embodiment, the bottom heating temperature of the substrate carrier is determined based on the current top average temperature, the preset top average temperature and the current bottom average temperature, including determining the current top temperature difference based on the current top average temperature and the preset top average temperature, and determining the bottom heating temperature based on the current top temperature difference and the current bottom average temperature.

[0047] The current top temperature difference indicates the degree of difference between the current top average temperature and the preset top average temperature. The larger the absolute value of the current top temperature difference, the greater the degree of difference between the current top average temperature and the preset top average temperature, and the smaller the absolute value of the current top temperature difference, the smaller the degree of difference between the current top average temperature and the preset top average temperature.

[0048] Specifically, the difference between the preset top average temperature and the current top average temperature is calculated, and the difference is used as the current top temperature difference. The bottom heating temperature will affect the top temperature of the substrate, and the required bottom heating temperature can be determined based on the corresponding relationship between the bottom heating temperature and the current top temperature difference and the current bottom average temperature. Optionally, the calculation formula for the bottom heating temperature is: T30-T3=f×△T0, where △T0=T20-T2, △T0 is the current top temperature difference, T20 is the preset top average temperature, T2 is the current top average temperature, T30 is the bottom heating temperature, T3 is the current bottom average temperature, and f is a fixed value. The fixed value f is related to the working state of the CVD reactor, etc. For example, when the CVD reactor is in a working state with a fixed process condition, the current top average temperature T2 in the CVD reactor is 800°C, the current bottom average temperature T3 is 1000°C, the preset top average temperature T20 is 900°C, and the heat source providing device is controlled to heat the substrate carrier at different heating temperatures. When the heating temperature provided by the heat source providing device is 1100°C, the current top average temperature in the CVD reactor reaches 900°C, and the ratio 1 of (1100-1000) / (900-800) is used as the fixed value f. The fixed value f under different process conditions is different and can be set according to actual needs, and is not specifically limited here.

[0049] S204, controlling the CVD reactor to heat the substrate carrier at the bottom heating temperature.

[0050] S205. Determine the adjusted component coefficient of each heat transfer gas corresponding to each substrate according to the preset top average temperature of each substrate, the current top temperature, the substrate capacity of the CVD reactor, the current bottom average temperature and each current component coefficient, and control the CVD reactor to adjust the component coefficient of each heat transfer gas by adjusting the component coefficient.

[0051] The technical solution of the embodiment of the present invention determines the current top average temperature according to each current top temperature and the number of substrates accommodated by the CVD reactor, and determines the bottom heating temperature of the substrate according to the current top average temperature, the preset top average temperature and the current bottom average temperature, so as to control the CVD reactor to heat the substrate carrier at the bottom heating temperature, so as to reduce the difference between the current top average temperature of the substrate and the preset top average temperature, improve the consistency of the top temperature in each CVD reactor with the same process conditions, thereby improving the consistency of thin film preparation and improving the preparation reliability of the CVD reactor.

[0052] Based on the above embodiments, the embodiments of the present invention describe the situation of determining the adjusted composition coefficient of each heat transfer gas corresponding to each substrate according to the preset top average temperature of each substrate, the current top temperature, the substrate accommodating number of the CVD reactor, the current bottom average temperature and each current composition coefficient. Figure 3 A flow chart of a third temperature control method for a CVD reactor provided in an embodiment of the present invention, as shown in FIG. Figure 3 As shown, the temperature control method of the CVD reactor includes:

[0053] S301, obtaining the current top temperature of each substrate in the CVD reactor, the preset top average temperature, the current bottom average temperature of the substrate carrier, the number of substrates accommodated in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate.

[0054] S302. Determine the bottom heating temperature of the substrate carrier according to the current top temperature, the preset top average temperature, the current bottom average temperature and the number of substrates that can be accommodated by the CVD reactor, and control the CVD reactor to heat the substrate carrier at the bottom heating temperature.

[0055] S303, determining the current top average temperature according to each current top temperature and the substrate accommodation quantity of the CVD reactor.

[0056] The ratio of the sum of the current top temperatures to the number of substrates accommodated by the CVD reactor is the current top average temperature.

[0057] S304, determining whether the absolute value of the difference between the preset top average temperature and the current top average temperature is less than or equal to the preset difference; if so, executing S305.

[0058] The absolute value of the difference between the preset top average temperature and the current top average temperature represents the value obtained by taking the absolute value of the difference between the preset top average temperature and the current top average temperature. The preset difference can be set according to actual needs. For example, if the preset top average temperature is 900°C, the preset difference is 30°C. It can also be other values, which are not specifically limited here.

[0059] Specifically, if the absolute value of the difference between the preset top average temperature and the current top average temperature is greater than the preset difference, it means that the current top average temperature and the preset top average temperature are significantly different. At this time, the process can return to execute the process according to the current top temperatures, the preset top average temperature, the current bottom average temperature of the substrate carrier and the number of substrates accommodated by the CVD reactor, determine the bottom heating temperature of the substrate carrier, and control the CVD reactor to heat the substrate carrier at the bottom heating temperature to reduce the difference between the current top average temperature and the preset top average temperature, until the absolute value of the difference between the preset top average temperature and the current top average temperature is less than or equal to the preset difference.

[0060] S305. Determine the adjusted component coefficient of each heat transfer gas corresponding to each substrate according to the current top temperature of each substrate, the preset top average temperature, the current bottom average temperature and each current component coefficient, and control the CVD reactor to adjust the component coefficient of each heat transfer gas by adjusting the component coefficient.

[0061] Specifically, if the absolute value of the difference between the preset top average temperature and the current top average temperature is less than or equal to the preset difference, it means that the difference between the preset top average temperature and the current top average temperature is small. At this time, the heat source providing equipment in the CVD reactor can be controlled to heat the substrate carrier at the current bottom heating temperature, so that the difference between the current top average temperature and the preset top average temperature is maintained at a small difference state. By adjusting the component coefficients of each heat transfer gas located under the substrate to adjust the thermal conductivity coefficient of the mixed gas composed of the heat transfer gas, the efficiency of heat transfer from the substrate carrier to the substrate is adjusted, thereby further reducing the difference between the current top temperature and the preset top average temperature, and improving the consistency and reliability of substrate film preparation by the CVD reactor.

[0062] It is understandable that the bottom of different substrates may include the same heat transfer gas group composed of multiple heat transfer gases, or the bottom of different substrates may include different heat transfer gas groups composed of multiple heat transfer gases. When the bottom of different substrates may include the same heat transfer gas group composed of multiple heat transfer gases, the current top temperature of each substrate, the preset top average temperature, the current bottom average temperature, and the current component coefficient of each heat transfer gas may be substituted into the calculation formula of the adjusted component coefficient to calculate the adjusted component coefficient of each heat transfer gas corresponding to each substrate, and for the same heat transfer gas, the average value of the calculated adjusted component coefficients of the heat transfer gas corresponding to each substrate is used as the adjusted component coefficient after the subsequent adjustment of the intake amount of the heat transfer gas. When different substrates may include different heat transfer gas groups composed of multiple heat transfer gases, that is, the heat transfer gas groups under different substrates are different, for the same substrate, the adjusted component coefficient of each heat transfer gas located under the substrate is related to the current top temperature of the substrate, the preset top average temperature, the current bottom average temperature and the current component coefficients. The current top temperature, the preset top average temperature, the current bottom average temperature and the current component coefficients can be substituted into the calculation formula of the adjusted component coefficient in sequence to calculate the adjusted component coefficient of each heat transfer gas under the substrate, and the heat transfer gas device in the CVD reactor is controlled to adjust the component coefficient of each heat transfer gas under the substrate with each adjusted component coefficient. The adjusted component coefficient of each heat transfer gas in the heat transfer gas groups under other substrates can refer to the above description and will not be repeated here.

[0063] The technical solution of the embodiment of the present invention is to determine the bottom heating temperature of the substrate carrier according to each current top temperature, the preset top average temperature, the current bottom average temperature of the substrate carrier and the number of substrates accommodated by the CVD reactor, and control the CVD reactor to heat the substrate carrier at the bottom heating temperature, and then determine the adjusted current top average temperature according to each current top temperature and the number of substrates accommodated by the CVD reactor. If the absolute value of the difference between the preset top average temperature and the adjusted current top average temperature is less than or equal to the preset difference, then determine the adjusted component coefficient of each heat transfer gas corresponding to each substrate according to the current top temperature of each substrate, the preset top average temperature, the current bottom average temperature of the substrate carrier and each current component coefficient, and control the CVD reactor to adjust the component coefficient of each heat transfer gas with the adjusted component coefficient, thereby adjusting the thermal conductivity of the heat transfer gas, adjusting the efficiency of heat transfer from the substrate carrier to the substrate, thereby reducing the difference between the current top temperature and the preset top average temperature, improving the temperature control accuracy of the CVD reactor, and improving the working reliability of the CVD reactor.

[0064] In an alternative embodiment, Figure 4 A flow chart of a fourth temperature control method for a CVD reactor provided in an embodiment of the present invention, as shown in FIG. Figure 4As shown, the temperature control method of the CVD reactor includes:

[0065] S401, obtaining the current top temperature of each substrate in the CVD reactor, the preset top average temperature, the current bottom average temperature of the substrate carrier, the number of substrates accommodated in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate.

[0066] S402. Determine the bottom heating temperature of the substrate carrier according to the current top temperature, the preset top average temperature, the current bottom average temperature and the number of substrates that can be accommodated by the CVD reactor, and control the CVD reactor to heat the substrate carrier at the bottom heating temperature.

[0067] S403, determining the current top average temperature according to each current top temperature and the substrate accommodation quantity of the CVD reactor.

[0068] S404, determine whether the absolute value of the difference between the preset top average temperature and the current top average temperature is less than or equal to the preset difference; if so, execute S405.

[0069] S405 , determining a top temperature ratio according to the current top temperature of the substrate, the preset top average temperature and the current bottom average temperature.

[0070] Specifically, the top temperature ratio is related to the current top temperature, the preset top average temperature and the current bottom average temperature of the substrate carrier. The current top temperature, the preset top average temperature and the current bottom average temperature of the substrate carrier can be substituted into the calculation formula of the top temperature ratio to calculate the top temperature ratio.

[0071] Optionally, a top temperature ratio is determined based on the current top temperature of the substrate, a preset top average temperature and the current bottom average temperature of the substrate carrier, including: determining a first top parameter based on the current top temperature and the current bottom average temperature of the substrate; determining a second top parameter based on the preset top average temperature and the current bottom average temperature of the substrate; and determining the top temperature ratio based on the first top parameter and the second top parameter.

[0072] Specifically, the first top parameter is the difference between the current top temperature and the current bottom average temperature of the substrate carrier, that is, the actual temperature loss amount during the process of the current bottom average temperature of the substrate carrier being transferred to the top of the substrate via the heat transfer gas. The second top parameter is the difference between the preset top average temperature and the current bottom average temperature of the substrate carrier, that is, when the temperature of the top of the substrate is the preset top average temperature, the theoretical temperature loss amount during the process of the current bottom average temperature of the substrate carrier being transferred to the top of the substrate via the heat transfer gas. The ratio of the first top parameter to the second top parameter is used as the top temperature ratio, that is, the ratio of the actual temperature loss amount to the theoretical temperature loss amount, so as to adjust the component coefficient of each heat transfer gas according to the top temperature ratio, and then adjust the efficiency and loss amount of the temperature transfer from the bottom of the substrate to the top, and reduce the difference between the current top temperature of the substrate and the preset top average temperature.

[0073] S406. According to the top temperature ratio and the current composition coefficient of each heat transfer gas corresponding to the substrate, the adjusted composition coefficient of each heat transfer gas corresponding to the substrate is determined in turn, and the CVD reactor is controlled to adjust the composition coefficient of each heat transfer gas by adjusting the composition coefficient.

[0074] Specifically, the adjusted component coefficient of each heat transfer gas is related to the top temperature ratio and the current component coefficient of each heat transfer gas. The top temperature ratio and each current component coefficient can be substituted into the calculation formula of the adjusted component coefficient in turn to obtain the adjusted component coefficient of each heat transfer gas.

[0075] Optionally, according to the top temperature ratio and the current component coefficient of each heat transfer gas corresponding to the substrate, the adjustment component coefficient of each heat transfer gas corresponding to the substrate is determined in sequence, including taking the heat transfer gas to be adjusted as the heat transfer gas to be adjusted; determining the adjustment component coefficient of the heat transfer gas to be adjusted according to the top temperature ratio and the current component coefficient of the heat transfer gas to be adjusted; taking the next heat transfer gas to be adjusted as the heat transfer gas to be adjusted, and returning to execute the step of determining the adjustment component coefficient of the heat transfer gas to be adjusted according to the top temperature ratio and the current component coefficient of the heat transfer gas to be adjusted, until the adjustment component coefficient of each heat transfer gas is obtained.

[0076] Specifically, when there are multiple heat transfer gases under the substrate, in order to improve the accuracy of determining the component coefficient of each heat transfer gas, the heat transfer gas to be adjusted can be used as the heat transfer gas to be adjusted, and then the product of the current component coefficient of the heat transfer gas to be adjusted and the top temperature ratio is used as the adjustment component coefficient of the heat transfer gas to be adjusted. Thereafter, the next heat transfer gas to be adjusted is used as the heat transfer gas to be adjusted, and the step of using the product of the current component coefficient of the heat transfer gas to be adjusted and the top temperature ratio as the adjustment component coefficient of the heat transfer gas to be adjusted is repeated until the adjustment component coefficient of each heat transfer gas is obtained, so as to adjust the adjustment component coefficient of each heat transfer gas under the substrate to be adjusted according to the adjustment component coefficient of each heat transfer gas, and then adjust the thermal conductivity of the mixed gas composed of each heat transfer gas, thereby improving the accuracy and reliability of temperature control of the adjustment substrate.

[0077] It is understandable that the above description is only based on the example of sequentially determining the adjustment component coefficients of each heat transfer gas. In another optional embodiment, for each heat transfer gas located under the same substrate, the adjustment component coefficients of each heat transfer gas can be calculated synchronously, that is, the product of the current component coefficient of each heat transfer gas and the top temperature ratio is used as the adjustment component coefficient of each heat transfer gas to improve the calculation efficiency. The method of determining the adjustment component system of each heat transfer gas can be set according to actual needs and is not specifically limited here.

[0078] It should be noted that when different substrates may include different heat transfer gas groups composed of multiple heat transfer gases, it is necessary to adjust the heat transfer gases corresponding to different substrates separately, and the method of determining the adjusted component ratio of each heat transfer gas corresponding to each substrate can be performed synchronously or in sequence. Synchronously, the adjusted component ratio of each heat transfer gas corresponding to each substrate is calculated synchronously by using the above-mentioned steps of determining the adjusted component ratio of the heat transfer gas corresponding to the substrate; sequentially, the adjusted component ratio of each heat transfer gas corresponding to one substrate is determined by using the above-mentioned steps of determining the adjusted component ratio of the heat transfer gas corresponding to the substrate, and then the adjusted component ratios of each heat transfer gas corresponding to the remaining substrates are determined in sequence.

[0079] The technical solution of the embodiment of the present invention calculates the absolute value of the difference between the preset top average temperature and the current top average temperature. When the absolute value of the difference between the preset top average temperature and the current top average temperature is less than or equal to the preset difference, the top temperature ratio is determined according to the current top temperature of the substrate, the preset top average temperature and the current bottom average temperature of the substrate carrier. Then, according to the top temperature ratio and the current component coefficient of each heat transfer gas corresponding to the substrate, the adjusted component coefficient of each heat transfer gas corresponding to the substrate is determined in turn to improve the calculation accuracy of the adjusted component coefficient of each heat transfer gas. After controlling the CVD reactor to adjust the component coefficient of each heat transfer gas by adjusting the component coefficient, the adjustment reliability of the heat transfer performance of the heat transfer gas and the regulation reliability of the top temperature of the substrate can be improved, thereby improving the control accuracy of the substrate temperature.

[0080] In an alternative embodiment, Figure 5 A flow chart of a fifth temperature control method for a CVD reactor provided in an embodiment of the present invention, as shown in FIG. Figure 5 As shown, the temperature control method of the CVD reactor includes:

[0081] S501, obtaining a current top cover temperature, a current water cooling temperature, a preset top cover temperature, and a current proportional coefficient of each heat transfer gas in a CVD reactor.

[0082] The current top cover temperature refers to the current temperature of the top cover in the CVD reactor, the current water cooling temperature refers to the current temperature of the water cooling liquid, and the current proportional coefficients of each heat transfer gas refer to the current proportional coefficients of each heat transfer gas. The preset top cover temperature refers to the theoretical temperature pre-set for the top cover, which can be set according to actual needs and is not specifically limited here.

[0083] Specifically, the current top cover temperature can be obtained through the temperature detection device located on the top of the top cover, the current water cooling temperature can be obtained through the water cooling providing device, and the preset top cover temperature can be a temperature value preset by the staff according to the actual preparation requirements of the substrate. The current proportional coefficient of each heat-conducting gas can be obtained through the heat-conducting gas providing device.

[0084] S502, determining the adjustment proportional coefficient of each heat transfer gas according to the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportional coefficient of each heat transfer gas, and controlling the CVD reactor to provide each heat transfer gas with each adjustment proportional coefficient.

[0085] The adjustment ratio coefficient of the heat-conducting gas represents the ratio of the intake volume of the heat-conducting gas to the total intake volume of the total heat-conducting gas after the heat-conducting gas is adjusted.

[0086] Specifically, the temperature of the top cover will affect the temperature inside the CVD reactor. The temperature of the top cover is mainly transmitted to the water-cooled liquid through the heat-conducting gas. Therefore, the current top cover temperature, the current water-cooling temperature, the preset top cover temperature and the current proportional coefficient of each heat-conducting gas can be substituted into the calculation formula of the adjustment proportional coefficient to calculate and determine the adjustment proportional coefficient of each heat-conducting gas. The proportional coefficient of each heat-conducting gas is adjusted based on each adjustment proportional coefficient to adjust the thermal conductivity of the mixed gas group composed of the heat-conducting gas, so that the temperature of the top cover can be transmitted to the water-cooled liquid at a faster or slower rate, so as to reduce the difference between the current top cover temperature and the preset top cover temperature, and improve the reliability of the control of the top cover temperature.

[0087] Optionally, the adjustment proportional coefficient of each heat-conducting gas is determined according to the current top cover temperature, the current water-cooling temperature, the preset top cover temperature and the current proportional coefficient of each heat-conducting gas, including determining a first adjustment parameter according to the current top cover temperature and the current water-cooling temperature; determining a second adjustment parameter according to the preset top cover temperature and the current water-cooling temperature; determining a top cover temperature ratio according to the first adjustment parameter and the second adjustment parameter; taking the heat-conducting gas to be adjusted as the heat-conducting gas to be adjusted; determining the adjustment proportional coefficient of the heat-conducting gas to be adjusted according to the top cover temperature ratio and the current proportional coefficient of the heat-conducting gas to be adjusted; taking the next heat-conducting gas to be adjusted as the heat-conducting gas to be adjusted, and returning to execute the step of determining the adjustment proportional coefficient of the heat-conducting gas to be adjusted according to the top cover temperature ratio and the current proportional coefficient of the heat-conducting gas to be adjusted, until the adjustment proportional coefficient of each heat-conducting gas is obtained.

[0088] Specifically, the first adjustment parameter is the difference between the current top cover temperature and the current water cooling temperature, that is, the actual temperature loss amount during the process of the current top cover temperature being transmitted to the water cooling liquid via the heat transfer gas. The second adjustment parameter is the difference between the preset top cover temperature and the current water cooling temperature, that is, the theoretical temperature loss amount during the process of the preset top cover temperature being transmitted to the water cooling liquid via the heat transfer gas. The ratio of the first adjustment parameter to the second adjustment parameter is used as the top cover temperature ratio. The heat transfer gas to be adjusted is used as the heat transfer gas to be adjusted, so as to respectively determine the adjustment proportional coefficient of each heat transfer gas, so as to improve the reliability of determining the adjustment proportional coefficient of each heat transfer gas. The product of the top cover temperature ratio and the current proportional coefficient of the heat-conducting gas to be adjusted is used as the adjustment proportional coefficient of the heat-conducting gas to be adjusted, and then the next heat-conducting gas to be adjusted is used as the heat-conducting gas to be adjusted, and the step of using the product of the current proportional coefficient of the heat-conducting gas to be adjusted and the top cover temperature ratio as the adjustment proportional coefficient of the heat-conducting gas to be adjusted is returned to be executed until the adjustment proportional coefficient of each heat-conducting gas is obtained, so as to adjust the proportional coefficient of each heat-conducting gas according to the adjustment proportional coefficient of each heat-conducting gas, and then adjust the thermal conductivity of the mixed gas composed of each heat-conducting gas, change the efficiency and loss of the top cover temperature transmitted to the water-cooling liquid through the heat-conducting gas, reduce the difference between the current top cover temperature and the preset top cover temperature, and improve the accuracy and reliability of the temperature control of the top cover. Exemplarily, the calculation formula for the adjustment proportional coefficient is as follows: b12=b11×(△T01÷△T00), △T01=T4-T5, △T00=T40-T5, T4 is the current top cover temperature, T5 is the current water cooling temperature, T40 is the preset top cover temperature, △T01 is the first adjustment parameter, △T00 is the second adjustment parameter, b11 is the current proportional coefficient, and b12 is the adjustment proportional coefficient.

[0089] It is understandable that the above only shows the sequential determination of the adjustment ratio coefficients of the heat transfer gases. The determination of the adjustment ratio coefficients of the heat transfer gases can also be performed simultaneously and can be set according to actual needs, which is not specifically limited here.

[0090] S503, obtaining the current top temperature of each substrate in the CVD reactor, the preset top average temperature, the current bottom average temperature of the substrate carrier, the number of substrates accommodated in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate.

[0091] S504. Determine the bottom heating temperature of the substrate carrier according to the current top temperature, the preset top average temperature, the current bottom average temperature and the number of substrates that can be accommodated by the CVD reactor, and control the CVD reactor to heat the substrate carrier at the bottom heating temperature.

[0092] S505. Determine the adjusted component coefficient of each heat transfer gas corresponding to each substrate according to the preset top average temperature of each substrate, the current top temperature, the substrate capacity of the CVD reactor, the current bottom average temperature and each current component coefficient, and control the CVD reactor to adjust the component coefficient of each heat transfer gas by adjusting the component coefficient.

[0093] The technical solution of the embodiment of the present invention obtains the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportional coefficient of each heat-conducting gas in the CVD reactor, and determines the adjustment proportional coefficient that needs to be adjusted for each heat-conducting gas according to the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportional coefficient of each heat-conducting gas, so as to control the CVD reactor to adjust the proportional coefficient of each heat-conducting gas according to the adjustment proportional coefficient, and then adjust the thermal conductivity of the mixed gas composed of each heat-conducting gas, change the efficiency and loss of the top cover temperature transmitted to the water-cooling liquid through the heat-conducting gas, reduce the difference between the current top cover temperature and the preset top cover temperature, and improve the accuracy and reliability of the top cover temperature control. In this way, the influence of the top cover temperature on the substrate temperature can be reduced, and the control accuracy and reliability of the subsequent substrate temperature adjustment can be improved.

[0094] Figure 6 A schematic diagram of a temperature control system for a CVD reactor provided in an embodiment of the present invention is shown in FIG. Figure 6 As shown, the temperature control system of the CVD reactor includes a substrate carrier 31, a heating device 2, a heat transfer gas device 20, a top temperature detection device 11, a bottom temperature detection device 12 and a controller 10; the substrate carrier 31 is used to place the substrate, the heating device 2 is located on one side of the substrate carrier 31, the heat transfer gas device 20 is used to provide heat transfer gas to the substrate carrier 31, the top temperature detection device 11 is used to detect the top temperature of each substrate in the CVD reactor, and the bottom temperature detection device 12 is used to detect the bottom temperature of the substrate carrier 31 in the CVD reactor; the controller 10 is electrically connected to the heating device 2, the heat transfer gas device 20, the top temperature detection device 11 and the bottom temperature detection device 12 respectively.

[0095] Among them, the substrate carrier 31 includes a substrate 3, a plurality of substrate trays 4 and a second airflow gap 34 corresponding to each substrate tray 4. The shapes of the substrate 3 and the substrate tray 4 can be set according to actual needs. For example, the substrate 3 and the substrate tray 4 are both circular, and can also be other. The number of substrate trays 4 can be set according to actual needs. For example, the number of substrate trays 4 is 5, and can also be other, which is not specifically limited here. The top temperature detection device 11 and the bottom temperature detection device 12 include temperature measuring devices such as infrared temperature sensors, which can be set according to actual needs. The heating device 2 includes heating components such as coils. The heat transfer gas device 20 is used to provide heat transfer gas for the airflow gap corresponding to each substrate. For example, the heat transfer gas device 20 provides a mixed gas composed of two heat transfer gases to the airflow gap. The current component coefficient of the first heat transfer gas is 0.3, and the current component coefficient of the second heat transfer gas is 0.7. It can also be other, which is not specifically limited here.

[0096] Specifically, the heating device 2 is located on the side of the substrate carrier 31 away from the substrate placement surface, that is, the heating device 2 is located at the bottom of the substrate carrier 31, and the heating device 2 indirectly heats the substrate placed on the substrate carrier 31 through the substrate carrier 31. The temperature control system of the CVD reactor also includes an airway rotating shaft 1, which can drive the substrate carrier 31 to rotate around the central axis of the airway rotating shaft 1. The airway rotating shaft 1 includes a plurality of airway pipelines connected to each second airflow gap 34, and each airway pipeline is connected to a different gas supply port of the heat transfer gas device 20. The heat transfer gas in the second airflow gap 34 can, on the one hand, make the substrate tray 4 and the substrate on the substrate tray 4 rotate along the central axis of the substrate tray 4, and on the other hand, can control the efficiency of the heat provided by the heating device 2 to be transferred to the substrate. Along the axial direction Z of the airway rotation axis 1, the top temperature detection device 11 is located on the side of the substrate tray 4 away from the heating device 2, so as to obtain the current top temperature of the substrate located on the upper surface of the substrate tray 4. Since the substrate carrier 31 rotates around the central axis of the airway rotation axis 1, the detection time of the current top temperature of each substrate by the top temperature detection device 11 can be determined according to the rotation speed of the airway rotation axis 1, so as to improve the detection accuracy and reliability of the current top temperature of each substrate. Exemplarily, when the top temperature detection device 11 is in working state, the top temperature detection device 11 can detect the top temperature of the first substrate at the 1st second, the 5th second, the 10th second, and the 5×nth second, then the top temperature detection device 11 is controlled to obtain the top temperature of the first substrate at the above-mentioned time respectively, and the value after averaging the obtained multiple top temperatures is used as the current top temperature of the first substrate.

[0097] It can be understood that, since the substrate carrier 31 can rotate, the bottom temperature detection device 12 can collect the current bottom temperature of the substrate carrier 31 at each moment in a short period of time, and use the average value of each current bottom temperature as the current bottom average temperature. The top temperature detection device 11 and the bottom temperature detection device 12 are electrically connected to the controller 10 respectively. The controller 10 can obtain the current top temperature of each substrate measured by the top temperature detection device 11, and the current bottom average temperature of the substrate carrier measured by the bottom temperature detection device 12. The controller 10 controls the working state of the heating device 2 and the heat transfer gas device 20 according to the current top temperature of each substrate, the current bottom average temperature of the substrate carrier and the internal processing logic to improve the temperature control reliability of the substrate. The specific processing logic of the controller 10 can refer to the temperature control method provided in the above embodiment, which will not be repeated here.

[0098] In an optional embodiment, continue to refer to Figure 6 The temperature control system of the CVD reactor further includes a top cover 5, a first airflow gap 6, an upper cover 7, a top cover temperature detection device 8, a heat-conducting gas device 30, and a heat-conducting gas channel 9 located in the upper cover 7. The upper cover 7 is located on the side of the top cover 5 away from the substrate carrier 31. The top cover temperature detection device 8 is located in the upper cover 7. The upper cover 7 includes a water-cooling liquid. The top cover temperature detection device 8 includes a temperature measurement device such as an infrared temperature sensor. The top cover temperature detection device 8 is electrically connected to the controller 10 to transmit the current top cover temperature acquired to the controller 10. The heat-conducting gas device 30 can provide the heat-conducting gas to the first airflow gap 6 through the heat-conducting gas channel 9. The heat-conducting gas device 30 is electrically connected to the controller 10. Therefore, the heat-conducting gas device 30 can provide the proportional coefficients of each heat-conducting gas provided to the controller 10, so that the controller 10 controls the working state of the heat-conducting gas device 30 according to the current top cover temperature and the current proportional coefficients of each heat-conducting gas. The specific control principle can refer to the temperature control method provided in the above embodiment, which will not be repeated here.

[0099] It should be noted that the temperature control system of the CVD reactor also includes a bottom plate 13 and a side wall 14. The bottom plate 13, the side wall 14 and the upper cover 7 constitute a closed reaction chamber to improve the purity of the semiconductor material prepared on the substrate surface.

[0100] The temperature control system of the CVD reactor provided in the embodiment of the present invention can execute the temperature control method provided in any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the execution method. The similarities can be referred to the above description.

[0101] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments, combinations and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A temperature control method for a CVD reactor, characterized in that: include: Obtaining the current top temperature of each substrate in the CVD reactor, the preset top average temperature, the current bottom average temperature of the substrate carrier, the number of substrates accommodated in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate; Determining a bottom heating temperature of the substrate carrier according to each of the current top temperature, the preset top average temperature, the current bottom average temperature, and the substrate accommodating quantity of the CVD reactor, and controlling the CVD reactor to heat the substrate carrier at the bottom heating temperature; Determining an adjusted composition coefficient of each of the heat transfer gases corresponding to each of the substrates according to the preset top average temperature of each of the substrates, the current top temperature, the number of substrates accommodated by the CVD reactor, the current bottom average temperature, and each of the current composition coefficients, and controlling the CVD reactor to adjust the composition coefficient of each of the heat transfer gases with the adjusted composition coefficient; Wherein, determining the adjusted composition coefficient of each heat transfer gas corresponding to each substrate according to the preset top average temperature of each substrate, the current top temperature, the substrate accommodating number of the CVD reactor, the current bottom average temperature and each current composition coefficient comprises: Determining a current top average temperature according to each of the current top temperatures and the number of substrates accommodated in the CVD reactor; the CVD reactor includes one or more of the substrates; Determine whether the absolute value of the difference between the preset top average temperature and the current top average temperature is less than or equal to the preset difference; If so, the adjusted component coefficients of the heat transfer gases corresponding to the substrates are determined according to the current top temperature of the substrates, the preset top average temperature, the current bottom average temperature and the current component coefficients.

2. The temperature control method according to claim 1, characterized in that: Determining the bottom heating temperature of the substrate carrier according to the current top temperature, the preset top average temperature, the current bottom average temperature and the substrate accommodating quantity of the CVD reactor comprises: Determining a current top average temperature according to each of the current top temperatures and the number of substrates accommodated by the CVD reactor; The bottom heating temperature of the substrate carrier is determined according to the current top average temperature, the preset top average temperature and the current bottom average temperature.

3. The temperature control method according to claim 2, characterized in that: Determining the bottom heating temperature of the substrate carrier according to the current top average temperature, the preset top average temperature and the current bottom average temperature, comprising: Determine a current top temperature difference according to the current top average temperature and the preset top average temperature; The bottom heating temperature is determined according to the current top temperature difference and the current bottom average temperature.

4. The temperature control method according to claim 1, characterized in that: Determining the adjusted component coefficient of each of the heat transfer gases corresponding to each of the substrates according to the current top temperature of each of the substrates, the preset top average temperature, the current bottom average temperature and each of the current component coefficients, comprises: determining a top temperature ratio according to the current top temperature of the substrate, the preset top average temperature, and the current bottom average temperature; The adjusted composition coefficients of the heat transfer gases corresponding to the substrates are determined in sequence according to the top temperature ratio and the current composition coefficients of the heat transfer gases corresponding to the substrates.

5. The temperature control method according to claim 4, characterized in that: Determining a top temperature ratio according to the current top temperature of the substrate, the preset top average temperature, and the current bottom average temperature includes: determining a first top parameter based on the current top temperature and the current bottom average temperature of the substrate; determining a second top parameter according to the preset top average temperature and the current bottom average temperature of the substrate; The top temperature ratio is determined according to the first top parameter and the second top parameter.

6. The temperature control method according to claim 4, characterized in that: Determining the adjusted component coefficients of the heat transfer gases corresponding to the substrates in sequence according to the top temperature ratio and the current component coefficients of the heat transfer gases corresponding to the substrates includes: using the heat transfer gas to be adjusted as the heat transfer gas to be adjusted; determining the adjustment component coefficient of the heat transfer gas to be adjusted according to the top temperature ratio and the current component coefficient of the heat transfer gas to be adjusted; The next heat transfer gas to be adjusted is used as the heat transfer gas to be adjusted, and the step of determining the adjustment component coefficient of the heat transfer gas to be adjusted according to the top temperature ratio and the current component coefficient of the heat transfer gas to be adjusted is returned to execute until the adjustment component coefficient of each heat transfer gas is obtained.

7. The temperature control method according to claim 1, characterized in that: Before obtaining the current top temperature of each substrate in the CVD reactor, the preset top average temperature, the current bottom average temperature of the substrate carrier, the number of substrates accommodated in the CVD reactor, and the current component coefficient of each heat transfer gas corresponding to each substrate, the method further includes: Obtaining a current top cover temperature, a current water cooling temperature, a preset top cover temperature, and a current proportional coefficient of each heat transfer gas in the CVD reactor; According to the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportional coefficient of each heat transfer gas, the adjustment proportional coefficient of each heat transfer gas is determined, and the CVD reactor is controlled to provide each heat transfer gas with the adjustment proportional coefficient.

8. The temperature control method according to claim 7, characterized in that: Determining the adjustment proportional coefficient of each of the heat transfer gases according to the current top cover temperature, the current water cooling temperature, the preset top cover temperature and the current proportional coefficient of each of the heat transfer gases includes: Determining a first adjustment parameter according to the current top cover temperature and the current water cooling temperature; Determining a second adjustment parameter according to the preset top cover temperature and the current water cooling temperature; determining a top cover temperature ratio according to the first adjustment parameter and the second adjustment parameter; Using the heat-conducting gas to be adjusted as the heat-conducting gas to be adjusted; Determining the adjustment proportional coefficient of the heat-conducting gas to be adjusted according to the top cover temperature ratio and the current proportional coefficient of the heat-conducting gas to be adjusted; The next heat-conducting gas to be adjusted is used as the heat-conducting gas to be adjusted, and the step of determining the adjustment proportional coefficient of the heat-conducting gas to be adjusted according to the top cover temperature ratio and the current proportional coefficient of the heat-conducting gas to be adjusted is returned to execute until the adjustment proportional coefficient of each heat-conducting gas is obtained.

9. A temperature control system for a CVD reactor, characterized in that: include: A substrate carrier, a heating device, a heat transfer gas device, a top temperature detection device, a bottom temperature detection device and a controller; The substrate stage is used to place a substrate, the heating device is located at one side of the substrate stage, the heat transfer gas device is used to provide heat transfer gas to the substrate stage, the top temperature detection device is used to detect the top temperature of each substrate in the CVD reactor, and the bottom temperature detection device is used to detect the bottom temperature of the substrate stage in the CVD reactor; The controller is electrically connected to the heating device, the heat transfer gas device, the top temperature detection device and the bottom temperature detection device respectively, and the controller is used to execute the temperature control method according to any one of claims 1-8.

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