A dual-ring parallel traveling wave electrode electro-optic modulator chip

Abstract

The present invention relates to the field of optical communication technology, and in particular to a dual-ring parallel traveling wave electrode electro-optical modulator chip, which comprises: a bus waveguide, a traveling wave electrode structure, and two micro-rings with the same racetrack structure; the first micro-ring and the second micro-ring are both coupled in parallel with the bus waveguide, the straight waveguide of the first micro-ring is arranged in the first modulation area of ​​the traveling wave electrode structure, and the straight waveguide of the second micro-ring is arranged in the second modulation area of ​​the traveling wave electrode structure; the traveling wave electrode structure is used to respond to a pair of differential signals generated by a signal generator, generate a first electric field in the first modulation area, modulate the optical signal of the first micro-ring, and generate a second electric field in the second modulation area with the same direction as the first electric field, modulate the optical signal of the second micro-ring. The traveling wave electrode is used to modulate the optical signal in the optical waveguide of the ring-to-ring electro-optical modulator, thereby expanding the bandwidth of the ring-to-modulator and realizing high-speed electro-optical modulation.

Description

Technical Field

[0001] The present invention relates to the field of optical communication technology, and in particular to a dual-ring parallel traveling wave electrode electro-optic modulator chip. Background Art

[0002] Electro-optic modulators (EOMs) convert high-speed electrical signals into optical signals, which is of great significance for applications such as telecommunication networks, microwave signal processing, quantum information, and optical sensors. On-chip integrated EOMs have the advantages of large bandwidth, low driving voltage, high extinction ratio, and suitability for large-scale integration. EOMs based on many photonic platforms have been developed, including silicon, indium phosphide, and thin-film lithium niobate (TFLN).

[0003] However, the length of Mach–Zehnder interferometer (MZI) devices is too long, which is not conducive to large-scale on-chip integration applications. To reduce the modulator area, resonant ring modulators have been widely studied. Ring modulators are key components in short-range optical interconnects due to their low operating voltage, compact size, and compatibility with CMOS circuit drivers. The driving voltage of microring modulators is generally low, but the large-scale application of microring modulators is still hindered by the following two aspects. First, the extinction ratio of microring modulators is sensitive to manufacturing variations and environmental perturbations. This is because the extinction ratio strictly depends on the coupling conditions between the bus waveguide and the ring. In particular, the highest extinction ratio only occurs under critical coupling, which can be easily destroyed by any slight external perturbation. This sensitivity makes it difficult to achieve microring modulators with high signal-to-noise ratio. Second, low-loss microring modulators are usually accompanied by narrow operating linewidths. This effect is the result of the fundamental trade-off between Q factor and linewidth.

[0004] The above contents are only used to assist in understanding the technical solution of the present invention and do not constitute an admission that the above contents are prior art. Summary of the invention

[0005] The main purpose of the present invention is to provide a dual-ring parallel traveling wave electrode electro-optic modulator chip, aiming to solve the technical problem of narrow working line width of low-loss micro-ring modulator in the prior art.

[0006] To achieve the above object, the present invention proposes a dual-ring parallel traveling wave electrode electro-optic modulator chip, the dual-ring parallel traveling wave electrode electro-optic modulator chip comprising: a bus waveguide, a traveling wave electrode structure and two micro-rings with the same racetrack structure;

[0007] The first micro-ring and the second micro-ring are both coupled in parallel with the bus waveguide, the straight waveguide of the first micro-ring is arranged in the first modulation region of the traveling wave electrode structure, and the straight waveguide of the second micro-ring is arranged in the second modulation region of the traveling wave electrode structure;

[0008] The traveling wave electrode structure is used to respond to a pair of differential signals generated by a signal generator, generate a first electric field in the first modulation area, and modulate the optical signal of the first microring, and at the same time generate a second electric field in the second modulation area with the same direction as the first electric field, and modulate the optical signal of the second microring.

[0009] Optionally, the dual-ring parallel traveling-wave electrode electro-optic modulator chip further comprises: a thermal adjustment structure;

[0010] The heat regulating structure is arranged on the first micro-ring and the second micro-ring;

[0011] The thermal tuning structure is used to tune the optical signal having the same resonant wavelength as the first microring and the second microring.

[0012] Optionally, the heat adjustment structure includes: a first resistor, a second resistor, and first to fourth DC electrodes;

[0013] The first resistor is arranged on the first micro-ring, one end of the first resistor is electrically connected to the first DC electrode, and the other end of the first resistor is electrically connected to the second DC electrode;

[0014] The second resistor is arranged on the second micro-ring, one end of the second resistor is electrically connected to the third DC electrode, and the other end of the second resistor is electrically connected to the fourth DC electrode.

[0015] Optionally, the traveling wave electrode structure comprises: a first ground electrode, a first source electrode, a second ground electrode, a second source electrode and a third ground electrode arranged in sequence;

[0016] The first source electrode receives a differential positive signal from the signal generator, and the second source electrode receives a differential negative signal from the signal generator;

[0017] The direction in which the first source electrode receives the electrical signal is opposite to the direction in which the second source electrode receives the electrical signal.

[0018] Optionally, the traveling wave electrode structure includes: a third resistor and a fourth resistor;

[0019] One end of the third resistor is electrically connected to the first source electrode, and the other end of the third resistor is electrically connected to the first ground electrode. One end of the fourth resistor is electrically connected to the second source electrode, and the other end of the fourth resistor is electrically connected to the third ground electrode.

[0020] Optionally, the traveling wave electrode structure further comprises: a plurality of microelectrode pairs;

[0021] Each of the microelectrode pairs is arranged between the first source electrode and the first ground electrode and the second ground electrode, and each of the microelectrode pairs is also arranged between the second source electrode and the second ground electrode and the third ground electrode.

[0022] Optionally, the straight waveguide of the first microring is arranged between the first source electrode and the second ground electrode, and the straight waveguide of the second microring is arranged between the second source electrode and the second ground electrode.

[0023] Optionally, the straight waveguide of the first microring is arranged between the first source electrode and the first ground electrode, and the straight waveguide of the second microring is arranged between the second source electrode and the third ground electrode.

[0024] Optionally, the dual-ring parallel traveling wave electrode electro-optic modulator chip further comprises: a substrate layer, a buried layer, a thin film lithium niobate and an upper cladding layer arranged in sequence from bottom to top;

[0025] The first microring, the second microring and the traveling wave electrode structure are all arranged on the top of the upper cladding layer.

[0026] In addition, to achieve the above-mentioned object, the present invention further provides an optical communication system, which includes the dual-ring parallel traveling-wave electrode electro-optic modulator chip as described above.

[0027] The present invention provides a dual-ring parallel traveling wave electrode electro-optic modulator chip, which includes: a bus waveguide, a traveling wave electrode structure, and two micro-rings with the same racetrack structure; the first micro-ring and the second micro-ring are both coupled in parallel with the bus waveguide, the straight waveguide of the first micro-ring is arranged in the first modulation area of ​​the traveling wave electrode structure, and the straight waveguide of the second micro-ring is arranged in the second modulation area of ​​the traveling wave electrode structure; the traveling wave electrode structure is used to respond to a pair of differential signals generated by a signal generator, generate a first electric field in the first modulation area, modulate the optical signal of the first micro-ring, and generate a second electric field with the same direction as the first electric field in the second modulation area, modulate the optical signal of the second micro-ring. By using the traveling wave electrode to modulate the optical signal in the optical waveguide of the ring-to-ring electro-optic modulator, the bandwidth of the ring-to-modulator is expanded, and high-speed electro-optic modulation is achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0029] Figure 1 It is a structural schematic diagram of the first embodiment of the dual-ring parallel traveling-wave electrode electro-optic modulator chip of the present invention;

[0030] Figure 2 It is a cross-sectional schematic diagram of a second embodiment of a dual-ring parallel traveling-wave electrode electro-optic modulator chip of the present invention;

[0031] Figure 3 It is a schematic structural diagram of the third embodiment of the dual-ring parallel traveling-wave electrode electro-optic modulator chip of the present invention;

[0032] Figure 4 It is a schematic structural diagram of a fourth embodiment of a dual-ring parallel traveling-wave electrode electro-optic modulator chip of the present invention;

[0033] Figure 5 It is a schematic structural diagram of the fifth embodiment of the dual-ring parallel traveling-wave electrode electro-optic modulator chip of the present invention.

[0034] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0035] It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not used to limit the present invention.

[0036] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0037] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0038] In addition, the descriptions of "first", "second", etc. in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0039] The main solution of the embodiment of the present invention is: a dual-ring parallel traveling wave electrode electro-optical modulator chip includes: a bus waveguide, a traveling wave electrode structure and two microrings with the same racecourse structure; the first microring and the second microring are both coupled in parallel with the bus waveguide, the straight waveguide of the first microring is arranged in the first modulation area of ​​the traveling wave electrode structure, and the straight waveguide of the second microring is arranged in the second modulation area of ​​the traveling wave electrode structure; the traveling wave electrode structure is used to respond to a pair of differential signals generated by a signal generator, generate a first electric field in the first modulation area, modulate the optical signal of the first microring, and at the same time generate a second electric field in the second modulation area with the same direction as the first electric field, modulate the optical signal of the second microring.

[0040] High-performance, low-driving-voltage, and ultra-high-bandwidth Mach-Zehnder (MZI) EOMs have been realized on TFLNs, but the length of MZI devices is too long, which is not conducive to large-scale on-chip integration applications. To reduce the modulator area, resonant ring modulators have been widely studied. Ring modulators are key components in short-range optical interconnects due to their low operating voltage, compact size, and compatibility with CMOS circuit drivers. The driving voltage of micro-ring modulators is generally low, but the large-scale application of micro-ring modulators is still hindered by the following two aspects. First, the extinction ratio of micro-ring modulators is sensitive to manufacturing variations and environmental perturbations. This is because the extinction ratio strictly depends on the coupling conditions between the bus waveguide and the ring. In particular, the highest extinction ratio only occurs under critical coupling, which is easily destroyed by any slight external perturbation. This sensitivity makes it difficult to realize micro-ring modulators with high signal-to-noise ratio. Second, low-loss micro-ring modulators are usually accompanied by narrow operating linewidths. This effect is the result of the fundamental trade-off between Q factor and linewidth. In optical modulators, electrode design plays a key role in modulator performance. There are mainly two types of electrodes: lumped electrodes and traveling wave electrodes. The bandwidth of lumped electrodes is limited by the RC constant and cannot effectively support high-frequency microwave signals. Therefore, for modulators, they are not suitable for high-frequency and ultra-high-frequency high-speed modulation.

[0041] Reference Figure 1 , Figure 1FIG. 1 is a schematic diagram of the structure of the first embodiment of the dual-ring parallel traveling wave electrode electro-optic modulator chip of the present invention. Figure 1 As shown, in this embodiment, the dual-ring parallel traveling wave electrode electro-optic modulator chip includes: a bus waveguide 101, a traveling wave electrode structure 20 and two micro-rings with the same racetrack structure.

[0042] Among them, the first microring 1021 and the second microring 1022 are both coupled in parallel with the bus waveguide 101, the straight waveguide of the first microring 1021 is set in the first modulation area of ​​the traveling wave electrode structure, and the straight waveguide of the second microring 1022 is set in the second modulation area of ​​the traveling wave electrode structure.

[0043] It should be noted that the traveling wave electrode structure can be used to respond to a pair of differential signals generated by a signal generator, generate a first electric field in the first modulation area, modulate the optical signal of the first microring, and simultaneously generate a second electric field in the second modulation area with the same direction as the first electric field, modulate the optical signal of the second microring.

[0044] It should be understood that the waveguide structure in the dual-ring parallel traveling wave electrode electro-optic modulator chip adopts a ridge waveguide form. Because the crystal direction of the lithium niobate crystal with the strongest electro-optic effect is used, on the x-cut thin-film lithium niobate wafer, the straight waveguide part in the micro-ring structure is designed in the middle of the traveling wave electrode to achieve traveling wave modulation.

[0045] In a specific implementation, the optical signal passes through a coupler, enters a thin-film lithium niobate ridge waveguide, and enters a bus waveguide for transmission. When passing through the first microring and the second microring, the optical signal of a specific wavelength is coupled into the first microring 1021 and the second microring 1022 through the coupling structure between the first microring 1021 and the second microring 1022 and the bus waveguide 101. Two GSG (ground-source-ground) high-frequency probes with differential source signals are respectively connected to the transmission line of the traveling wave electrode structure, that is, at the same time, one is a positive signal and the other is a negative signal, so that the straight waveguides of the two different microrings are in the same electric field direction at the same time, so that the electric field has the same phase effect on the optical signal, and finally the phase effect of the two electrodes on the microrings on the modulator is in the same direction. The optical signal in the modulated microring is finally coupled from the microring to the bus waveguide through the coupling region for output.

[0046] It should be noted that, in order to make the electric field directions of the straight waveguides of two different micro-rings the same at the same time, two identical but opposite GSG structures can be set to construct the traveling wave electrode structure. That is, the traveling wave electrode structure can include: a first ground electrode 301, a first source electrode 302, a second ground electrode 303, a second source electrode 304 and a third ground electrode 305 arranged in sequence. The first source electrode 302 receives the differential positive signal of the signal generator, and the second source electrode 304 receives the differential negative signal of the signal generator; the direction in which the first source electrode 302 receives the electrical signal is opposite to the direction in which the second source electrode 304 receives the electrical signal.

[0047] In a possible implementation, the straight waveguide of the first microring 1021 is disposed between the first source electrode 302 and the second ground electrode 303 , and the straight waveguide of the second microring 1022 is disposed between the second source electrode 304 and the second ground electrode 303 .

[0048] The traveling wave electrode structure includes: a third resistor R3 and a fourth resistor R4; one end of the third resistor R3 is electrically connected to the first source electrode 302, the other end of the third resistor R3 is electrically connected to the first ground electrode 301, one end of the fourth resistor R4 is electrically connected to the second source electrode 304, and the other end of the fourth resistor R4 is electrically connected to the third ground electrode 305. All the above-mentioned ground electrodes are electrically connected. The electric field is generated between the source electrode and the ground electrode through the potential difference between the third resistor R3 and the fourth resistor R4 on the electrodes.

[0049] Furthermore, the traveling wave electrode structure also includes: a plurality of microelectrode pairs 306; each of the microelectrode pairs 306 is arranged between the first source electrode and the first ground electrode and the second ground electrode, and each of the microelectrode pairs is also arranged between the second source electrode and the second ground electrode and the third ground electrode. The number of the above-mentioned microelectrode pairs 306 can be set according to actual conditions, and this embodiment does not limit this. Exemplarily, each microelectrode in this embodiment can be set to a T-type structure, and then can also be set to other structures (such as L-type), and this embodiment does not limit this.

[0050] Furthermore, although the design parameters of the first microring and the second microring are the same, because the process error and the microring structure are more sensitive, the two microrings are tuned by setting a thermal tuning structure so that the two microrings resonate the optical signal of the same wavelength. The dual-ring parallel traveling wave electrode electro-optic modulator chip may also include: a thermal tuning structure The thermal tuning structure is arranged on the first microring and the second microring; The thermal tuning structure can be used to tune the optical signal of the same wavelength to resonate with the first microring and the second microring.

[0051] It should be noted that the thermal adjustment structure includes: a first resistor R1, a second resistor R2, and first to fourth DC electrodes (E1~E4); the first resistor R1 is arranged on the first microring 1021, one end of the first resistor R1 is electrically connected to the first DC electrode E1, and the other end of the first resistor R1 is electrically connected to the second DC electrode E2; the second resistor R2 is arranged on the second microring 1022, one end of the second resistor R2 is electrically connected to the third DC electrode E3, and the other end of the second resistor R2 is electrically connected to the fourth DC electrode E4. The resonant wavelength of the optical signal on the first microring and the second microring is tuned by adjusting the voltage loaded on the first resistor R1 and the second resistor R2.

[0052] In this embodiment, a dual-ring parallel traveling wave electrode electro-optic modulator chip is provided, which includes: a bus waveguide, a traveling wave electrode structure, and two micro-rings with the same racetrack structure; the first micro-ring and the second micro-ring are coupled in parallel with the bus waveguide, the straight waveguide of the first micro-ring is arranged in the first modulation area of ​​the traveling wave electrode structure, and the straight waveguide of the second micro-ring is arranged in the second modulation area of ​​the traveling wave electrode structure; the traveling wave electrode structure is used to respond to a pair of differential signals generated by a signal generator, generate a first electric field in the first modulation area, modulate the optical signal of the first micro-ring, and generate a second electric field in the second modulation area with the same direction as the first electric field, modulate the optical signal of the second micro-ring. By using the traveling wave electrode to modulate the optical signal in the optical waveguide of the ring-to-ring electro-optic modulator, the bandwidth of the ring-to-modulator is expanded, and high-speed electro-optic modulation is achieved.

[0053] Reference Figure 2 , Figure 2 FIG. 2 is a cross-sectional schematic diagram of a second embodiment of a dual-ring parallel traveling-wave electrode electro-optic modulator chip according to the present invention. Figure 2 As shown, in this embodiment, the same or similar contents as those in the first embodiment mentioned above can be referred to the above introduction and will not be described in detail later. The dual-ring parallel traveling wave electrode electro-optic modulator chip can adopt an x-cut thin film lithium niobate wafer, and the dual-ring parallel traveling wave electrode electro-optic modulator chip may include: a substrate layer 201, a low refractive index buried layer 202, a ridge waveguide structure composed of a thin film lithium niobate 203, and a low refractive index upper cladding layer 204. Among them, the waveguide transmission direction of the electro-optic modulation area is the y direction shown in the figure. It also includes the metal traveling wave electrode 205 and the thermal adjustment structure resistance material 206 as described in the first embodiment mentioned above. In terms of technology, the electrode can also be directly added to the thin film lithium niobate, and then the upper cladding layer of SiO2 is added.

[0054] It should be noted that the traveling wave electrode adopts a coplanar waveguide structure, the material is gold or copper, and the thickness is 0.9 microns. The traveling wave electrode uses the electro-optical effect of lithium niobate to load the radio frequency electrical signal into the optical signal in the waveguide, and the electrode structure parameters are determined by simulation. The resistor material is a nickel-chromium alloy with a thickness of 180 nanometers. The substrate layer 201 is a silicon or quartz substrate with a thickness of 500 microns, the low refractive index buried layer 202 is silicon dioxide, the refractive index is 1.44, and the thickness is 2 microns. The ridge waveguide composed of the thin film lithium niobate 203 is 180 nanometers thick, the slab waveguide is 180 nanometers thick, and the low refractive index upper cladding 204 is silicon dioxide with a thickness of 1 micron.

[0055] Reference Figure 3 , Figure 3 FIG. 1 is a schematic diagram of the structure of the third embodiment of the dual-ring parallel traveling-wave electrode electro-optic modulator chip of the present invention. Based on the above embodiments, the fourth embodiment of the dual-ring parallel traveling-wave electrode electro-optic modulator chip of the present invention is proposed. Figure 3 As shown, in this embodiment, the same or similar contents as those in the first embodiment and the second embodiment can be referred to the above introduction and will not be described in detail later.

[0056] In order to make the straight waveguides of two different microrings have the same electric field direction at the same time, so that the phase influence of the electric field on the optical signal is consistent, the straight waveguide of the first microring 1021 can also be set between the first source electrode 302 and the first ground electrode 301, and the straight waveguide of the second microring 1022 can be set between the second source electrode 304 and the third ground electrode 305.

[0057] Reference Figure 4 , Figure 4 FIG. 1 is a schematic structural diagram of a fourth embodiment of a dual-ring parallel traveling-wave electrode electro-optic modulator chip of the present invention. The fourth embodiment of a dual-ring parallel traveling-wave electrode electro-optic modulator chip of the present invention is proposed based on the above embodiments. Figure 4 As shown, in this embodiment, the same or similar contents as those in the above embodiments can be referred to the above introduction and will not be described in detail later.

[0058] In order to reduce the difficulty of processing and further enhance the ability of the bus waveguide to couple to the first microring and the second microring, a multimode interference (MMI) structure (see 401 and 402 in the figure) may be used in the coupling part to further reduce the difficulty of processing.

[0059] It should be understood that the straight waveguide of the first microring 1021 is set between the first source electrode 302 and the first ground electrode 301, and the straight waveguide of the second microring 1022 is set between the second source electrode 304 and the third ground electrode 305. The straight waveguide of the first microring 1021 is set between the first source electrode 302 and the second ground electrode 303, and the straight waveguide of the second microring 1022 is set between the second source electrode 304 and the second ground electrode 303. Both can use the MMI structure for coupling. This embodiment is exemplified in the latter way.

[0060] Reference Figure 5 , Figure 5 FIG. 5 is a schematic structural diagram of the fifth embodiment of the dual-ring parallel traveling-wave electrode electro-optic modulator chip of the present invention. The fifth embodiment of the dual-ring parallel traveling-wave electrode electro-optic modulator chip of the present invention is proposed based on the above embodiments. Figure 5 As shown, in this embodiment, the same or similar contents as those in the above embodiments can be referred to the above introduction and will not be described in detail later.

[0061] In order to further reduce the difficulty of processing and testing so that the two GSG structures of the traveling wave electrode structure can be set in the same direction, the coupling direction of the optical signal on the second micro-ring can be changed by bending the bus waveguide, thereby changing the direction setting of the GSG structure.

[0062] It should be understood that if Figure 1 The optical signal in the first micro-ring and the second micro-ring is transmitted in a counterclockwise direction. Figure 5 In the embodiment, light is transmitted counterclockwise in the first microring and clockwise in the second microring, thereby changing the direction of light transmission. Therefore, the direction of the variable GSG structure can be set to the same direction.

[0063] In addition, in order to achieve the above-mentioned purpose, an embodiment of the present invention also proposes an optical communication system. Since the optical communication system includes the above-mentioned dual-ring parallel traveling wave electrode electro-optical modulator chip, it at least has all the beneficial effects brought by the technical solutions of the above-mentioned embodiments, which will not be repeated here one by one.

[0064] The above are only preferred embodiments of the present invention, and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

[0065] Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0066] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0067] In addition, the descriptions of "first", "second", etc. in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

Claims

1. A dual-ring parallel traveling wave electrode electro-optic modulator chip, characterized in that: The dual-ring parallel traveling wave electrode electro-optic modulator chip comprises: a bus waveguide, a traveling wave electrode structure and two micro-rings with the same racetrack structure; The first micro-ring and the second micro-ring are both coupled in parallel with the bus waveguide, the straight waveguide of the first micro-ring is arranged in the first modulation region of the traveling wave electrode structure, and the straight waveguide of the second micro-ring is arranged in the second modulation region of the traveling wave electrode structure; The traveling wave electrode structure is used to respond to a pair of differential signals generated by a signal generator, generate a first electric field in the first modulation area, and modulate the optical signal of the first microring, and at the same time generate a second electric field in the second modulation area with the same direction as the first electric field, and modulate the optical signal of the second microring.

2. The dual-ring parallel traveling wave electrode electro-optic modulator chip according to claim 1, characterized in that: The dual-ring parallel traveling wave electrode electro-optic modulator chip further includes: a thermal adjustment structure; The heat regulating structure is arranged on the first micro-ring and the second micro-ring; The thermal tuning structure is used to tune the optical signal having the same resonant wavelength as the first microring and the second microring.

3. The dual-ring parallel traveling wave electrode electro-optic modulator chip as claimed in claim 2, characterized in that: The heat adjustment structure includes: a first resistor, a second resistor, and first to fourth DC electrodes; The first resistor is arranged on the first micro-ring, one end of the first resistor is electrically connected to the first DC electrode, and the other end of the first resistor is electrically connected to the second DC electrode; The second resistor is arranged on the second micro-ring, one end of the second resistor is electrically connected to the third DC electrode, and the other end of the second resistor is electrically connected to the fourth DC electrode.

4. The dual-ring parallel traveling wave electrode electro-optic modulator chip according to claim 1, characterized in that: The traveling wave electrode structure comprises: a first ground electrode, a first source electrode, a second ground electrode, a second source electrode and a third ground electrode arranged in sequence; The first source electrode receives a differential positive signal from the signal generator, and the second source electrode receives a differential negative signal from the signal generator; The direction in which the first source electrode receives the electrical signal is opposite to the direction in which the second source electrode receives the electrical signal.

5. The dual-ring parallel traveling wave electrode electro-optic modulator chip as claimed in claim 4, characterized in that: The traveling wave electrode structure comprises: a third resistor and a fourth resistor; One end of the third resistor is electrically connected to the first source electrode, and the other end of the third resistor is electrically connected to the first ground electrode. One end of the fourth resistor is electrically connected to the second source electrode, and the other end of the fourth resistor is electrically connected to the third ground electrode.

6. The dual-ring parallel traveling wave electrode electro-optic modulator chip as claimed in claim 5, characterized in that: The traveling wave electrode structure further comprises: a plurality of microelectrode pairs; Each of the microelectrode pairs is arranged between the first source electrode and the first ground electrode and the second ground electrode, and each of the microelectrode pairs is also arranged between the second source electrode and the second ground electrode and the third ground electrode.

7. The dual-ring parallel traveling wave electrode electro-optic modulator chip as claimed in claim 6, characterized in that: The straight waveguide of the first microring is arranged between the first source electrode and the second ground electrode, and the straight waveguide of the second microring is arranged between the second source electrode and the second ground electrode.

8. The dual-ring parallel traveling wave electrode electro-optic modulator chip as claimed in claim 6, characterized in that: The straight waveguide of the first microring is arranged between the first source electrode and the first ground electrode, and the straight waveguide of the second microring is arranged between the second source electrode and the third ground electrode.

9. The dual-ring parallel traveling wave electrode electro-optic modulator chip according to claim 1, characterized in that: The dual-ring parallel traveling wave electrode electro-optic modulator chip also includes: a substrate layer, a buried layer, a thin film lithium niobate and an upper cladding layer arranged in sequence from bottom to top; The first microring, the second microring and the traveling wave electrode structure are all arranged on the top of the upper cladding layer.

10. An optical communication system, characterized in that: The optical communication system comprises the dual-ring parallel traveling-wave electrode electro-optic modulator chip as claimed in any one of claims 1 to 9.

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