Display panel and display device

Abstract

Embodiments of the present application provide a display panel and a display device, and relate to the technical field of display, and aim to solve the problem that metal wiring in a display panel forms a water and oxygen channel after side etching and affects the performance of the display panel. The display panel has a display area and a bending area located on one side of the display area. In the bending area, the display panel comprises a substrate, a connecting electrode located on one side of the substrate, a first insulating layer covering the connecting electrode, a metal wiring located on the first insulating layer, and a second insulating layer located on the side of the metal wiring away from the first insulating layer. The metal wiring comprises first wiring and second wiring arranged at intervals. The second insulating layer is provided with an opening. In the thickness direction of the display panel, the connecting electrode is arranged in the region corresponding to the opening. The first wiring is electrically connected to the connecting electrode through a first via hole of the first insulating layer, and the second wiring is electrically connected to the connecting electrode through a second via hole of the first insulating layer.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display panel and a display device. BACKGROUND

[0002] An organic light emitting diode (OLED) display panel adopts metal traces formed by stacking multiple layers of metal materials to transmit signals. In the manufacturing process of the OLED display panel, a yellow light process is often used to form the required patterns. The metal traces of the stacked structure may be subjected to a replacement reaction during the manufacturing process of the anode of the display panel, which may be affected by the anode etching solution, resulting in lateral etching (i.e., side etching) of a certain metal material layer. During the manufacturing process of other film layers, the film layer material may be left in the gap formed by the side etching of the metal material layer, thereby forming a water and oxygen channel. In this way, water vapor from the outside of the OLED display panel can easily enter the inside of the OLED display panel through the water and oxygen channel, thereby affecting the performance and service life of the OLED display panel. SUMMARY

[0003] Embodiments of the present application provide a display panel and a display device to solve the problem of the formation of a water and oxygen channel by the side etching of the metal traces in the display panel, which affects the performance of the display panel.

[0004] In one aspect, the present application provides a display panel having a display area and a bending area located on one side of the display area. In the bending area, the display panel includes a substrate, a connection electrode located on one side of the substrate, a first insulating layer covering the connection electrode, a metal trace located on the first insulating layer, and a second insulating layer located on the side of the metal trace away from the first insulating layer. The metal trace includes a first trace and a second trace arranged at intervals. An opening is provided on the second insulating layer. The connection electrode is arranged in a region corresponding to the opening in the thickness direction of the display panel. The first trace is electrically connected to the connection electrode through a first via hole of the first insulating layer, and the second trace is electrically connected to the connection electrode through a second via hole of the first insulating layer.

[0005] In some embodiments, the second insulating layer covers at least one of the first via hole and the second via hole.

[0006] In some embodiments, the second insulating layer also covers at least one of the first trace and the second trace.

[0007] In some embodiments, the second insulating layer comprises a first insulating portion and a second insulating portion along an extending direction of the metal trace, the first insulating portion covers the first trace, the first insulating portion comprises a first sidewall at the opening, and the first trace is located outside a coverage range of the first sidewall; the second insulating portion covers the second trace, the second insulating portion comprises a second sidewall at the opening, and the second trace is located outside a coverage range of the second sidewall.

[0008] In some embodiments, the display panel further comprises a metal pattern layer located in the display area, and the metal pattern layer is arranged in the same layer as the connecting electrode.

[0009] In some embodiments, the display panel further comprises a substrate and a semiconductor layer located in the display area, the metal pattern layer comprises a light shielding layer located between the semiconductor layer and the substrate, the substrate is arranged in the same layer as the substrate, and the light shielding layer is arranged in the same layer as the connecting electrode.

[0010] In some embodiments, the metal pattern layer comprises a gate layer, and the gate layer is arranged in the same layer as the connecting electrode.

[0011] In some embodiments, the display panel further comprises a third insulating layer and a data line layer located in the bending area, the data line layer is located between the first insulating layer and the third insulating layer, and the metal trace is arranged on the third insulating layer.

[0012] In some embodiments, at least one of the first trace and the second trace comprises a first titanium metal layer, an aluminum layer and a second titanium metal layer arranged in sequence.

[0013] In another aspect, the embodiments of the present application also provide a display device comprising the display panel as described in any of the above embodiments.

[0014] For the display panel provided by the embodiments of the present application, the first insulating layer covers the connecting electrode located thereunder, so that the side etching of the connecting electrode in the manufacturing process of the anode of the display panel can be effectively avoided. In this way, the complete water-oxygen channel formed by the metal trace in the region corresponding to the opening can be blocked. In this case, even if the second trace is side etched and forms a partial water-oxygen channel under the action of the anode etching solution, when the water vapor from the outside of the display panel enters the region corresponding to the opening through the partial water-oxygen channel, the connecting electrode does not undergo side etching, so that the water vapor is difficult to continue to invade into the inside of the display panel, thereby effectively alleviating the problem of the complete water-oxygen channel formed by the side etching of the metal trace, and further ensuring the performance and service life of the display panel. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 is a structural diagram of a display panel provided by some embodiments of the present application;

[0016] Figure 2 is a cross-sectional view of a bending area of a display panel provided by some embodiments of the present application;

[0017] Figure 3 is Figure 1 is another cross-sectional view along the direction of A-A’ in the display panel;

[0018] Figure 4 is Figure 1 is another cross-sectional view along the direction of A-A’ in the display panel;

[0019] Figure 5 is a structural diagram of a display device provided by some embodiments of the present application. DETAILED DESCRIPTION

[0020] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. The described technical solutions are only used to explain and illustrate the ideas of the present application, and should not be regarded as limiting the protection scope of the present application.

[0021] In the description of the present application, it should be understood that the terms “first”, “second” and similar words do not represent any order, number or importance, but are only used to distinguish different technical features.

[0022] “A and / or B” includes the following three combinations: only A, only B, and the combination of A and B.

[0023] The use of “adapted for” or “configured for” in the present application means open and inclusive language that does not exclude devices adapted for or configured for performing additional tasks or steps. In addition, the use of “based on” means open and inclusive, because the process, step, calculation or other action “based on” one or more stated conditions or values can be based on additional conditions or values beyond those stated in practice.

[0024] In the present application, the word “exemplary” is used to mean “serving as an example, instance, or illustration.” Any embodiment described as “exemplary” in the present application is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the present application.

[0025] The various embodiments of the present application are similar, and the features in different embodiments and / or different examples can be combined with each other.

[0026] Based on the technical problems mentioned in the above background technology, taking the signal routing used to transmit power signals (such as ELVDD signals or ELVSS signals) in the display panel as an example, the signal routing may adopt a three-layer metal stacking structure of titanium-aluminum-titanium (TiALTi). In the anode manufacturing process of the OLED display panel, this three-layer metal stacking structure may be affected by the anode etching solution during the anode etching process, causing the middle aluminum metal material layer to be etched, and a gap is formed in the middle aluminum metal material layer due to the lateral etching of the signal routing. In the manufacturing process of other film layers, for example, in the manufacturing process of the pixel definition layer, the material of the pixel definition layer may remain in the gap, which affects the packaging effect of the display panel and eventually forms a water-oxygen channel that is easily corroded by external water and oxygen.

[0027] In view of this, some embodiments of the present application provide a display panel, such as Figure 1 As shown, the display panel 100 has a display area AA and a bending area BA located on one side of the display area AA.

[0028] Pixels are located within the display area AA and are used to display images. Signal traces electrically connected to the pixels within the display area AA are located within the bending area BA to transmit external drive signals to the display panel 100. The bending area BA can be bent to reduce the border area of ​​the display panel 100, thereby increasing the screen-to-body ratio of the display panel 100.

[0029] like Figures 2 to 4 As shown, within the bending area BA, the display panel 100 includes: a substrate 11, a connecting electrode 12, a first insulating layer 13, a metal trace 14, and a second insulating layer 15. The connecting electrode 12 is located on one side of the substrate 11. For example, the connecting electrode 12 can be directly disposed on the substrate 11 or on a film layer on one side of the substrate 11.

[0030] The first insulating layer 13 covers the connecting electrode 12. The metal traces 14 are located on the first insulating layer 13. The metal traces 14 include first traces 141 and second traces 142. The second insulating layer 15 is located on the side of the metal traces 14 away from the first insulating layer 13 and has an opening K.

[0031] In the thickness direction of the display panel 100 , the connecting electrode 12 is disposed in a region corresponding to the opening K. As an example, the connecting electrode 12 is located directly below the opening K. For example, the orthographic projection of the connecting electrode 12 on the substrate 11 is within the range of the orthographic projection of the bottom edge of the second insulating layer 15 located at the opening K on the substrate 11 .

[0032] The first trace 141 is electrically connected with the connecting electrode 12 through the first via hole 131 formed in the first insulating layer 13, and the second trace 142 is electrically connected with the connecting electrode 12 through the second via hole 132 formed in the first insulating layer 13. As an implementation manner, the first trace 141 is electrically connected with the connecting electrode 12 through the conductor in the first via hole 131. Similarly, the second trace 142 is electrically connected with the connecting electrode 12 through the conductor in the second via hole 132. Since the connecting electrode 12 is electrically connected with both the first trace 141 and the second trace 142, the metal trace 14 can realize the transmission of signals. For example, in another implementation manner, the metal material used for forming the first trace 141 can be filled in the first via hole 131 and in contact with the connecting electrode 12 in the manufacturing process of the first trace 141, so as to realize the electrical connection between the first trace 141 and the connecting electrode 12. Similarly, for the second trace, the metal material used for forming the second trace 142 can be filled in the second via hole 132 and in contact with the connecting electrode 12, so as to realize the electrical connection between the second trace 142 and the connecting electrode 12.

[0033] Through the above arrangement, the first insulating layer 13 covers the connecting electrode 12 below, so as to effectively avoid the side etching of the connecting electrode 12 in the manufacturing process of the anode of the display panel. Thus, the metal trace 14 can form a complete water-oxygen channel in the region corresponding to the opening K. In this case, even if the second trace 142 is side etched and forms a partial water-oxygen channel under the action of the anode etching solution, when the water vapor from the outside of the display panel enters the region corresponding to the opening K through the partial water-oxygen channel, the connecting electrode 12 is not side etched, so that the water vapor is difficult to continue to invade into the display panel, thereby effectively alleviating the problem that the display panel 100 forms a complete water-oxygen channel due to the side etching of the metal trace, and further ensuring the performance and service life of the display panel 100.

[0034] In some embodiments, as shown in FIG. 1B, the second insulating layer 15 covers at least one of the first via hole 131 and the second via hole 132. Figure 2

[0035] In some examples, the second insulating layer 15 covers the first via hole 131, so as to effectively avoid the conductor in the first via hole 131 from being exposed in the opening K and being etched under the action of the anode etching solution, thereby effectively ensuring the stable electrical connection between the first trace 141 and the connecting electrode 12.

[0036] ​In some examples, the second insulating layer 15 covers the second via hole 132, so as to effectively avoid the conductor in the second via hole 132 being exposed in the opening K and being etched by the anodic etching solution, thereby effectively ensuring the stable electrical connection between the second trace 142 and the connecting electrode 12.

[0037] It should be noted that, in the case where the second insulating layer 15 covers the first via hole 131, one end of the connecting electrode 12 extends into the coverage range of the second insulating layer 15 and is electrically connected with the conductor in the first via hole 131. In the case where the second insulating layer 15 covers the second via hole 132, the other end of the connecting electrode 12 extends into the coverage range of the second insulating layer 15 and is electrically connected with the conductor in the second via hole 132.

[0038] In some embodiments, please refer to Figure 2 , the second insulating layer 15 also covers at least one of the first trace 141 and the second trace 142.

[0039] In some examples, the second insulating layer 15 also covers the first trace 141, that is, the second insulating layer 15 covers the first trace 141 on the basis of covering the first via hole 131. In this way, it can effectively avoid the end of the first trace 141 being located outside the second insulating layer 15 and being etched by the anodic etching solution, thereby effectively ensuring the stable electrical connection between the first trace 141 and the connecting electrode 12.

[0040] In some examples, the second insulating layer 15 also covers the second trace 142, that is, the second insulating layer 15 covers the second trace 142 on the basis of covering the second via hole 132. In this way, it can effectively avoid the end of the second trace 142 being located outside the second insulating layer 15 and being etched by the anodic etching solution, thereby effectively ensuring the stable electrical connection between the second trace 142 and the connecting electrode 12.

[0041] In some embodiments, please refer to Figure 2 , along the extension direction of the metal trace 14, the second insulating layer 15 includes a first insulating part 151 and a second insulating part 152, the first insulating part 151 covers the first trace 141, and the first insulating part 151 includes a first side wall 1511 located at the opening K, and the first trace 141 is located outside the coverage range of the first side wall 1511. That is, there is a gap between the orthogonal projection of the first trace 141 on the substrate 11 and the orthogonal projection of the first side wall 1511 on the substrate 11. Therefore, during the manufacturing process of the opening K, it is necessary to ensure that the opening K is as far away from the first trace 141 as possible, so as to effectively avoid the first trace 141 being exposed in the opening K and being etched by the anodic etching solution, thereby ensuring the stability of the electrical connection.

[0042] In addition, the second insulating portion 152 covers the second trace 142, and the second insulating portion 152 includes a second sidewall 1521 located at the opening K, and the second trace 142 is located outside the coverage of the second sidewall 1521. That is, there is a gap between the orthographic projection of the second trace 142 on the substrate 11 and the orthographic projection of the second sidewall 1521 on the substrate 11. Therefore, during the manufacturing of the opening K, it is necessary to ensure that the opening K is as far away from the first trace 141 as possible, so as to effectively avoid the first trace 141 from being exposed in the opening K and being etched by the anode etching liquid, thereby ensuring the stability of the electrical connection.

[0043] In some embodiments, the metal trace 14 can be a power signal line. For example, an ELVDD signal line or an ELVSS signal line. In this case, the metal trace 14 is used for the transmission of the power signal, and since the first trace 141 and the second trace 142 of the metal trace 14 are electrically connected through the connecting electrode 12, the stable transmission of the power signal is thus ensured.

[0044] In some embodiments, as shown in Figure 2 at least one of the first trace 141 and the second trace 142 includes a first titanium metal layer, an aluminum metal layer, and a second titanium metal layer arranged in sequence. In this case, the first trace 141 and / or the second trace 142 includes a titanium-aluminum-titanium (TiAlTi) stacked structure. For example, the first trace 141, the second trace 142, or both the first trace 141 and the second trace 142 include a titanium-aluminum-titanium stacked structure. The above structure has high strength and good plasticity and toughness, which can reduce the problem of breaking while ensuring stable signal transmission.

[0045] In some embodiments, as shown in Figure 3 and Figure 4 The display panel 100 further includes a metal pattern layer 20 located in the display area AA, and the metal pattern layer 20 is arranged in the same layer as the connecting electrode 12.

[0046] In this way, during the manufacturing of the display panel 100, the metal pattern layer in the display area AA can be manufactured at the same time as the connecting electrode 12 in the bending area BA, so as to reduce the manufacturing steps of the display panel 100 and reduce the manufacturing cost of the display panel 100.

[0047] For example, the display panel 100 can first deposit a metal layer at the layer position corresponding to the metal pattern layer 20, and then form the metal pattern layer 20 and the connecting electrode 12 at the same time through a photolithography process (including exposure, development, and etching steps).

[0048] In some embodiments, as shown in Figure 3As shown, the display panel 100 further comprises a substrate 21 and a semiconductor layer 23 in the display area AA, the metal pattern layer 20 comprises a light shielding layer 201 between the semiconductor layer 23 and the substrate 21, the substrate 21 and the substrate 11 are arranged in the same layer, and the light shielding layer 201 and the connecting electrode 12 are arranged in the same layer.

[0049] In this way, the light shielding layer 201 in the display area AA can be manufactured at the same time as the connecting electrode 12, which avoids the need for additional photolithography processes for manufacturing the connecting electrode 12 alone, thereby facilitating the reduction of the manufacturing cost of the display panel 100.

[0050] In some examples, the substrate 21 and the substrate 11 can be synchronously manufactured by using flexible materials. The semiconductor layer 23 can be composed of amorphous silicon, single crystal silicon, polycrystalline silicon, or oxide semiconductor. The semiconductor layer 23 comprises a channel region which is not doped with impurities, and a source region and a drain region which are formed by doping impurities on both sides of the channel region. The doped impurities are different for different types of thin film transistors, and can be N-type impurities or P-type impurities.

[0051] In some examples, as shown in Figure 3 The display panel 100 further comprises an interlayer dielectric layer 22 in the display area AA and on the light shielding layer 201, and the interlayer dielectric layer 22 is made of insulating material. The light shielding layer 201 can effectively shield external light, thereby ensuring that the semiconductor layer 23 has good performance.

[0052] In some embodiments, as shown in Figure 3 and Figure 4 In the display area AA, the semiconductor layer 23 further comprises, in sequence from the side away from the substrate 21, a first gate insulating layer 24, a gate layer 202, a second gate insulating layer, a source-drain electrode layer 203, and a planarization layer 26.

[0053] The gate layer 202 comprises a gate electrode, and the gate electrode overlaps the channel region of the semiconductor layer 23. The source-drain electrode layer 203 comprises a source electrode and a drain electrode, and the source electrode is connected to the source region of the semiconductor layer 23, and the drain electrode is connected to the drain region of the semiconductor layer 23. In this way, the above-mentioned gate electrode, source electrode, and drain electrode are used as the control electrode, input electrode, and output electrode of the thin film transistor.

[0054] In some embodiments, as shown in Figure 3 and Figure 4 The metal trace 14 and the source-drain electrode layer 203 can be arranged in the same layer.

[0055] In this way, the source-drain electrode layer 203 in the display area AA can be manufactured at the same time as the metal trace 14, which avoids the need for additional photolithography processes for manufacturing the metal trace 14 alone, thereby facilitating the reduction of the manufacturing cost of the display panel 100.

[0056] In the case where the metal trace 14 is arranged in the same layer as the source-drain electrode layer 203, the spacing between the metal trace 14 and the substrate 11 is equal to the spacing between the source-drain electrode layer 203 and the substrate 21. This is advantageous for ensuring the stability of the structure of the display panel 100.

[0057] In some examples, the display panel 100 further comprises a connection line connected to the light-blocking layer 201 through a via, the connection line being arranged in the same layer as the metal trace 14. A direct current can be passed to the light-blocking layer 201 through the connection line, thereby improving the stability of the channel region of the semiconductor layer 23. Since the connection line is arranged in the same layer as the metal trace 14, the via connecting the connection line and the light-blocking layer 201 can be fabricated simultaneously with the via connecting the metal trace 14 (e.g. the first trace 141 and the second trace 142) and the connection electrode 12, thereby avoiding the increase in cost due to the separate fabrication of the first via and the second via.

[0058] In some embodiments, as shown in FIG. 1A, the gate layer 202 is arranged in the same layer as the connection electrode 12. In this case, the connection electrode 12 can be fabricated simultaneously with the gate layer 202 in the display area AA, thereby avoiding the need for an additional photolithography process for the separate fabrication of the connection electrode 12, and thus being advantageous for reducing the manufacturing cost of the display panel 100. Figure 4 It is worth noting that,

[0059] only a top-gate thin-film transistor is shown in FIG. 1A, but this does not limit the position of the gate layer 202. In some examples, the gate layer 202 can also be arranged between the semiconductor layer 23 and the substrate 21, which is not limited in the embodiments of the present application. Figure 4 In some embodiments, as shown in FIG. 1A and FIG. 1B, the display area AA further comprises a planarization layer 26 arranged on the connection electrode 12.

[0060] Figure 3 and Figure 4 In the display area AA, the planarization layer 26 further comprises, in sequence from the side away from the substrate 21, an anode layer 28, a pixel definition layer 29, a light-emitting layer 30, and a cathode layer 31. The pixel definition layer 29 is provided with an opening exposing the anode in the anode layer 28, so that the anode, the light-emitting layer 30, and the cathode layer 31 can be located in the opening in a stacked manner and form a light-emitting device. The anode can be connected to the output of the thin-film transistor, so that the opening and closing of the light-emitting device can be controlled by the thin-film transistor.

[0061] In some examples, the output of the thin-film transistor can be connected to the anode in the anode layer 28 through a transfer electrode 27.

[0062] In some embodiments, as shown in FIG. 1A and FIG. 1B, the display area AA further comprises a planarization layer 26 arranged on the connection electrode 12. Figure 4 ​As shown, the display panel 100 further includes a third insulating layer 16 and a data line layer located in the bending area BA. The data line layer is located between the first insulating layer 13 and the third insulating layer 16 . The metal trace 14 is disposed on the third insulating layer 16 .

[0063] This arrangement allows the connection electrodes 12 to avoid the data line layer where the data signal lines are provided, thereby ensuring smooth arrangement of the connection electrodes 12 and reducing interference of the data signal lines on the connection electrodes 12 .

[0064] In some examples, the second gate insulating layer may include a first sub-gate insulating layer 251 and a second gate insulating layer 252 sequentially disposed in a direction away from the substrate 21 . The third insulating layer 16 may be disposed in the same layer as the second gate insulating layer 252 .

[0065] Some embodiments of the present application provide a display device, such as Figure 5 As shown, the display device 200 includes a display panel 100. Figures 1 to 4 As shown, the display panel has a display area AA and a bending area BA located on one side of the display area AA. Within the bending area BA, the display panel 100 includes: a substrate 11, a connecting electrode 12, a first insulating layer 13, a metal trace 14, and a second insulating layer 15. The connecting electrode 12 is located on one side of the substrate 11. The first insulating layer 13 covers the connecting electrode 12. The metal trace 14 is located on the first insulating layer 13 and includes a first trace 141 and a second trace 142 spaced apart. The second insulating layer 15 is located on the side of the metal trace 14 away from the first insulating layer 13 and has an opening K formed therein.

[0066] Along the thickness direction of the display panel 100 , the connection electrode 12 is disposed in the region corresponding to the opening K. The first trace 141 is electrically connected to the connection electrode 12 through the first via hole 131 of the first insulating layer 13 , and the second trace 142 is electrically connected to the connection electrode 12 through the second via hole 132 of the first insulating layer 13 .

[0067] Because the first insulating layer 13 covers the connection electrode 12 located thereunder, it can effectively prevent the connection electrode 12 from being side-etched by the anodic etching solution, thereby preventing the metal trace 14 from forming a complete water-oxygen channel in the area corresponding to the opening K. In this case, even if the second trace 142 is side-etched by the anodic etching solution and forms a partial water-oxygen channel, when water vapor from outside the display panel enters the area corresponding to the opening K through this partial water-oxygen channel, the lack of side-etching at the connection electrode 12 makes it difficult for the water vapor to further intrude into the display panel. This effectively alleviates the problem of the display panel 100 forming a complete water-oxygen channel due to side-etching of the metal trace, thereby ensuring the performance and service life of the display panel 100.

[0068] In some examples, the display panel 100 can further include other features described in the above embodiments and / or examples, and based on this, the display device 200 has technical effects corresponding to the display panel 100, which will not be described here.

[0069] In some examples, the display device 200 further includes a chip on film 110 located on one side of the display panel 100 and electrically connected with the display panel 100. The display panel 100 can realize input of external signals through the chip on film 110, thereby realizing picture display.

[0070] The above describes the embodiments of the present application in detail, and the principles and implementation manners of the present application are described by applying specific examples. The above description of the embodiments is only used to help understand the method of the present application and its core idea; meanwhile, for those skilled in the art, the specific implementation manners and application ranges will be changed according to the idea of the present application, and the above description of the present application should not be understood as a limitation.

Claims

1. A display panel, characterized in that: The display panel has a display area and a bending area located on one side of the display area. In the bending area, the display panel includes: substrate; A connecting electrode is located on one side of the substrate; a first insulating layer, covering the connecting electrode; Metal traces, located on the first insulating layer, the metal traces comprising a first trace and a second trace that are spaced apart; and a second insulating layer, located on a side of the metal trace away from the first insulating layer, and having an opening; Wherein, along the thickness direction of the display panel, the connecting electrode is arranged in the area corresponding to the opening, the first wiring is electrically connected to the connecting electrode through a first via hole of the first insulating layer, and the second wiring is electrically connected to the connecting electrode through a second via hole of the first insulating layer; the second insulating layer covers at least one of the first via hole and the second via hole, and the second insulating layer also covers at least one of the first wiring and the second wiring; Along the extension direction of the metal routing, the second insulating layer includes a first insulating portion and a second insulating portion, the first insulating portion covers the first routing, the first insulating portion includes a first side wall located at the opening, and the first routing is outside the coverage range of the first side wall; the second insulating portion covers the second routing, the second insulating portion includes a second side wall located at the opening, and the second routing is outside the coverage range of the second side wall.

2. The display panel according to claim 1, wherein: The display panel further includes a metal pattern layer located in the display area, and the metal pattern layer is arranged in the same layer as the connecting electrode.

3. The display panel according to claim 2, wherein: The display panel further includes a substrate and a semiconductor layer located in the display area. The metal pattern layer includes a light shielding layer located between the semiconductor layer and the substrate. The substrate and the underlay are arranged on the same layer, and the light shielding layer and the connecting electrode are arranged on the same layer.

4. The display panel according to claim 2, wherein: The metal pattern layer includes a gate layer, and the gate layer is provided in the same layer as the connecting electrode.

5. The display panel according to claim 1, wherein: The display panel further includes a third insulating layer and a data line layer located in the bending region. The data line layer is located between the first insulating layer and the third insulating layer. The metal trace is disposed on the third insulating layer.

6. The display panel according to claim 1, wherein: At least one of the first wiring and the second wiring includes a first titanium metal layer, an aluminum metal layer, and a second titanium metal layer stacked in sequence.

7. A display device, characterized in that: include: The display panel according to any one of claims 1 to 6.

Images