Method and device for monitoring igbt short circuit current rise

Abstract

The application provides an IGBT short-circuit current rising process monitoring method and device. The IGBT short-circuit current rising process monitoring method comprises the following steps: determining a chip gate voltage according to a gate power supply voltage, a gate turn-on resistor, a gate loop parasitic inductance, a current rising moment and a gate input capacitor; determining a collector current according to the chip gate voltage and a threshold voltage; determining collector-emitter rising data according to the collector current, a direct current voltage, an IGBT working loop parasitic inductance and a rising time period; and monitoring a short-circuit current rising process according to the collector-emitter rising data, which is more economical and safe.

Description

Technical Field

[0001] This invention relates to the field of IGBT devices, and more specifically, to a method and apparatus for monitoring the rise process of IGBT short-circuit current. Background Technology

[0002] IGBT devices combine the advantages of fast switching speed of MOSFET devices and low conduction loss of bipolar devices, and have been widely used in new energy converters, flexible DC transmission equipment, dynamic reactive power compensation equipment and other applications.

[0003] Currently, the monitoring and evaluation schemes for collector-emitter voltage during the short-circuit current decrease of IGBTs require a large number of measuring devices, which is not safe or economical. Summary of the Invention

[0004] The main objective of this invention is to provide a method and apparatus for monitoring the rise of IGBT short-circuit current, which reduces the number of measuring devices, is more economical and safer, and has certain guiding significance for the state monitoring of the rise of IGBT short-circuit current.

[0005] To achieve the above objectives, embodiments of the present invention provide a method for monitoring the rise process of IGBT short-circuit current, comprising:

[0006] The chip gate voltage is determined based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, current rise time, and gate input capacitance.

[0007] The collector current is determined based on the chip gate voltage and threshold voltage;

[0008] The collector-emitter rise data is determined based on the collector current, DC voltage, parasitic inductance of the IGBT operating circuit, and rise time period, in order to monitor the short-circuit current rise process based on the collector-emitter rise data.

[0009] In one embodiment, the collector-emitter rise data includes collector-emitter voltage and power loss during the collector-emitter rise process;

[0010] The collector-emitter rise data is determined based on the collector current, DC voltage, IGBT operating circuit parasitic inductance, and rise time period, including:

[0011] The collector-emitter voltage is determined based on the collector current, the DC voltage, and the parasitic inductance of the IGBT operating circuit.

[0012] The power loss during the collector-emitter rise process is determined based on the collector-emitter voltage and the rise time period.

[0013] In one embodiment, it further includes:

[0014] The gate input capacitance is determined based on the gate-emitter capacitance and the collector-gate capacitance.

[0015] In one embodiment, the gate power supply voltage includes the gate turn-on power supply voltage;

[0016] Determining the chip gate voltage based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, the current rise time, and the gate input capacitance includes:

[0017] The gate current is determined based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, the current rise time, and the gate input capacitance.

[0018] The chip gate voltage is determined based on the gate current, the gate turn-on power supply voltage, the gate turn-on resistance, and the gate circuit parasitic inductance.

[0019] This invention also provides a monitoring device for the rise process of IGBT short-circuit current, comprising:

[0020] The chip gate voltage module is used to determine the chip gate voltage based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, current rise time, and gate input capacitance.

[0021] A collector current module is used to determine the collector current based on the chip gate voltage and threshold voltage.

[0022] The rise monitoring module is used to determine collector-emitter rise data based on the collector current, DC voltage, parasitic inductance of the IGBT working circuit, and rise time period, so as to monitor the short-circuit current rise process based on the collector-emitter rise data.

[0023] In one embodiment, the collector-emitter rise data includes collector-emitter voltage and power loss during the collector-emitter rise process;

[0024] The rise monitoring module includes:

[0025] The collector-emitter voltage unit is used to determine the collector-emitter voltage based on the collector current, the DC voltage, and the parasitic inductance of the IGBT operating circuit.

[0026] The rise process power loss unit is used to determine the collector-emitter rise process power loss based on the collector-emitter voltage and the rise time period.

[0027] In one embodiment, it further includes:

[0028] A gate input capacitor module is used to determine the gate input capacitance based on the gate-emitter capacitance and the collector-gate capacitance.

[0029] In one embodiment, the gate power supply voltage includes the gate turn-on power supply voltage;

[0030] The chip gate voltage module includes:

[0031] A gate current unit is used to determine the gate current based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, the current rise time, and the gate input capacitance.

[0032] A chip gate voltage unit is used to determine the chip gate voltage based on the gate current, the gate turn-on power supply voltage, the gate turn-on resistance, and the gate circuit parasitic inductance.

[0033] This invention also provides an electronic device, including a memory, a processor, and a computer program stored in the memory and running on the processor. When the processor executes the computer program, it implements the steps of the monitoring method for the rise process of the IGBT short-circuit current.

[0034] This invention also provides a computer-readable storage medium storing a computer program thereon, which, when executed by a processor, implements the steps of the method for monitoring the rise of the IGBT short-circuit current.

[0035] This invention also provides a computer program product, including a computer program / instruction, which, when executed by a processor, implements the steps of the monitoring method for the rise process of the IGBT short-circuit current.

[0036] The method and apparatus for monitoring the rise process of IGBT short-circuit current in this invention first determines the chip gate voltage based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, current rise time, and gate input capacitance. Then, the collector current is determined based on the chip gate voltage and threshold voltage. Finally, the collector-emitter rise data is determined based on the collector current, DC voltage, IGBT working circuit parasitic inductance, and rise time period to monitor the rise process of short-circuit current. This reduces the number of measuring devices and is more economical and safer. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0038] Figure 1 This is a flowchart of the monitoring method for the rise of IGBT short-circuit current in an embodiment of the present invention;

[0039] Figure 2 This is a flowchart of S101 in an embodiment of the present invention;

[0040] Figure 3 This is a flowchart of S103 in an embodiment of the present invention;

[0041] Figure 4 This is a schematic diagram of a half-bridge circuit model in an embodiment of the present invention;

[0042] Figure 5 This is a typical waveform diagram of voltage and current during the short circuit process in an embodiment of the present invention;

[0043] Figure 6 This is a gate circuit topology diagram in an embodiment of the present invention;

[0044] Figure 7 This is a structural block diagram of the monitoring device for the rise process of IGBT short-circuit current in an embodiment of the present invention;

[0045] Figure 8 This is a schematic block diagram illustrating the system configuration of an electronic device 9600 according to an embodiment of this application. Detailed Implementation

[0046] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0047] Those skilled in the art will recognize that embodiments of the present invention can be implemented as a system, apparatus, device, method, or computer program product. Therefore, this disclosure can be specifically implemented in the following forms: entirely hardware, entirely software (including firmware, resident software, microcode, etc.), or a combination of hardware and software.

[0048] Current technology requires two measuring devices to measure the collector-emitter voltage u to obtain power loss. CE and collector current i C Therefore, this invention proposes an analysis scheme for the collector-emitter voltage and power loss during the rise of the IGBT short-circuit current based on the gate signal. This can be achieved by observing the gate voltage (u) of the IGBT device. GE ), gate current (i G To estimate the collector-emitter voltage (u) during the short-circuit current rise process. CE ) and power loss (E SC,stage3 This invention has certain guiding significance for the monitoring and analysis of the rising short-circuit current of IGBTs. The invention will be described in detail below with reference to the accompanying drawings.

[0049] Figure 1 This is a flowchart of a method for monitoring the rise of IGBT short-circuit current in an embodiment of the present invention. Figure 1 As shown, the monitoring method for the rise of the IGBT short-circuit current includes:

[0050] S101: Determine the chip gate voltage based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, current rise time, and gate input capacitance.

[0051] The gate power supply voltage includes the gate turn-on power supply voltage and the gate turn-off power supply voltage.

[0052] Figure 4 This is a schematic diagram of a half-bridge circuit model in an embodiment of the present invention. Figure 4 As shown, L s,1 For the parasitic inductance of the IGBT working circuit, u s,1 The voltage of the parasitic inductance in the IGBT operating circuit, L s,2 parasitic inductance of freewheeling circuit, u s,2 The voltage across the parasitic inductance of the freewheeling circuit is given by FWD, where FWD is a diode and L is the voltage across the freewheeling circuit. s,F For the parasitic inductance of the diode, u s,F The voltage of the diode's parasitic inductance, u F Diode voltage, u chip,F For the internal chip voltage of the diode, L s,CE For IGBT package, integrate emitter parasitic inductance, u s,CE The voltage of the collector-emitter parasitic inductance of the IGBT package, u CE For IGBT device collector-emitter voltage, u chip,CE For the collector-emitter voltage of the IGBT device chip, u GE U is the gate voltage of the IGBT device, G is the IGBT gate, C is the IGBT collector, and E is the IGBT emitter. C is the DC capacitor, U DC DC capacitor voltage, i C For collector current, i L For the load inductor current, I load For load inductance. The reference directions of voltage and current are at... Figure 4 The bid was successful.

[0053] Figure 5 This is a typical waveform diagram of voltage and current during a short circuit in an embodiment of the present invention. Figure 5 As shown, ICM represents the peak current. The short-circuit current rise process is as follows: Figure 5 The t1 to t2 stages.

[0054] Figure 6 This is a gate circuit topology diagram in an embodiment of the present invention. Figure 6As shown, it includes the gate input capacitor C. ies Gate-emitter capacitance C GE Collector-gate capacitor c GC Gate turn-on power supply voltage U G,on Gate turn-off power supply voltage U G,off Gate turn-off resistor R G,off Gate circuit parasitic inductance L s,G G is the IGBT gate, C is the IGBT collector, and E is the IGBT emitter.

[0055] Figure 2 This is a flowchart of S101 in an embodiment of the present invention. Figure 2 As shown, S101 includes:

[0056] S201: Determine the gate current based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, the current rise time, and the gate input capacitance.

[0057] In one embodiment, before performing S101, the method further includes:

[0058] The gate input capacitance is determined based on the gate-emitter capacitance and the collector-gate capacitance.

[0059] In practice, the gate circuit is a second-order circuit, and the gate input capacitor C ies Gate emitter capacitance C GE Sum gate capacitance c GC sum:

[0060] C ies =C GE +c GC .

[0061] like Figures 4-6 As shown, the turn-on process begins at time t0, at which time the gate bias voltage changes from U... G,off Change to U G,on Write the gate circuit equations; we find that:

[0062]

[0063] Solving the above system of equations, we obtain the gate current as:

[0064]

[0065] Among them, i G U is the gate current. G,off U is the gate turn-off power supply voltage. G,on R is the gate turn-on power supply voltage. G,on L is the gate turn-on resistance. s,G C is the parasitic inductance of the gate circuit. iest represents the gate input capacitance, and t represents the current falling time.

[0066] S202: Determine the chip gate voltage based on the gate current, the gate turn-on power supply voltage, the gate turn-on resistance, and the gate circuit parasitic inductance.

[0067] In practical implementation, the chip gate voltage can be determined using the following formula:

[0068]

[0069] Among them, u chip,GE U is the chip gate voltage. G,on This is the gate turn-on power supply voltage.

[0070] S102: Determine the collector current based on the chip gate voltage and threshold voltage.

[0071] In practice, the collector current can be determined using the following formula:

[0072]

[0073] Among them, i C Let λ be the collector current, λ be a constant coefficient, and α be the collector current. pnp u is the transport coefficient of a transistor. chip,GE U is the chip gate voltage. T This is the threshold voltage.

[0074] S103: Determine the collector-emitter rise data based on the collector current, DC voltage, parasitic inductance of the IGBT operating circuit, and rise time period to monitor the short-circuit current rise process based on the collector-emitter rise data.

[0075] The collector-emitter rise data includes the collector-emitter voltage and the power loss during the collector-emitter rise process.

[0076] Figure 3 This is a flowchart of S103 in an embodiment of the present invention. For example... Figure 3 As shown, S103 includes:

[0077] S301: Determine the collector-emitter voltage based on the collector current, the DC voltage, and the parasitic inductance of the IGBT operating circuit.

[0078] At time t2, u chip,GE =U G,on i C Reaching peak value. Collector-emitter voltage u CE for:

[0079]

[0080] Among them, u CE For collector-emitter voltage, U DC For DC voltage, L s,1 Parasitic inductance for the IGBT operating circuit.

[0081] S302: Determine the power loss during the collector-emitter rise process based on the collector-emitter voltage and the rise time period.

[0082] In one embodiment, the power loss E during the short-circuit current rise process SC,stage1 for:

[0083]

[0084] Among them, E SC,stage1 The power loss during the collector-emitter rise process is represented by t3, which is the starting point of the rise time period, and t4 is the ending point of the rise time period.

[0085] In summary, the monitoring method for the rise of IGBT short-circuit current provided in this embodiment of the invention can be used for transient peak voltage analysis during IGBT short-circuit turn-on and collector-emitter voltage estimation during IGBT turn-on transient; it can also be used for power loss analysis during short-circuit process and analysis of chip temperature changes during short-circuit process, which has certain guiding significance for monitoring and analysis of the rise of IGBT short-circuit current.

[0086] Based on the same inventive concept, this invention also provides a monitoring device for the rise process of IGBT short-circuit current. Since the principle of this device in solving the problem is similar to the monitoring method for the rise process of IGBT short-circuit current, the implementation of this device can refer to the implementation of the method, and the repeated parts will not be described again.

[0087] Figure 7 This is a structural block diagram of the monitoring device for the rise process of IGBT short-circuit current in an embodiment of the present invention. Figure 7 As shown, the monitoring device for the rise of IGBT short-circuit current includes:

[0088] The chip gate voltage module is used to determine the chip gate voltage based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, current rise time, and gate input capacitance.

[0089] A collector current module is used to determine the collector current based on the chip gate voltage and threshold voltage.

[0090] The rise monitoring module is used to determine collector-emitter rise data based on the collector current, DC voltage, parasitic inductance of the IGBT working circuit, and rise time period, so as to monitor the short-circuit current rise process based on the collector-emitter rise data.

[0091] In one embodiment, the collector-emitter rise data includes collector-emitter voltage and power loss during the collector-emitter rise process;

[0092] The rise monitoring module includes:

[0093] The collector-emitter voltage unit is used to determine the collector-emitter voltage based on the collector current, the DC voltage, and the parasitic inductance of the IGBT operating circuit.

[0094] The rise process power loss unit is used to determine the collector-emitter rise process power loss based on the collector-emitter voltage and the rise time period.

[0095] In one embodiment, it further includes:

[0096] A gate input capacitor module is used to determine the gate input capacitance based on the gate-emitter capacitance and the collector-gate capacitance.

[0097] In one embodiment, the gate power supply voltage includes the gate turn-on power supply voltage;

[0098] The chip gate voltage module includes:

[0099] A gate current unit is used to determine the gate current based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, the current rise time, and the gate input capacitance.

[0100] A chip gate voltage unit is used to determine the chip gate voltage based on the gate current, the gate turn-on power supply voltage, the gate turn-on resistance, and the gate circuit parasitic inductance.

[0101] In summary, the IGBT short-circuit current rise monitoring device of this embodiment first determines the chip gate voltage based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, current rise time, and gate input capacitance. Then, it determines the collector current based on the chip gate voltage and threshold voltage. Finally, it determines the collector-emitter rise data based on the collector current, DC voltage, IGBT working circuit parasitic inductance, and rise time period to monitor the short-circuit current rise process. This reduces the number of measuring devices and is more economical and safer.

[0102] Figure 8 This is a schematic block diagram illustrating the system configuration of the electronic device 9600 according to an embodiment of this application. Figure 8 As shown, the electronic device 9600 may include a central processing unit 9100 and a memory 9140; the memory 9140 is coupled to the central processing unit 9100. It is worth noting that... Figure 8 This is an example; other types of structures can also be used to supplement or replace this structure to achieve telecommunications functions or other functions.

[0103] In one embodiment, the monitoring method for the rise of the IGBT short-circuit current can be integrated into the central processing unit 9100. The central processing unit 9100 can be configured to perform the following control:

[0104] The chip gate voltage is determined based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, current rise time, and gate input capacitance.

[0105] The collector current is determined based on the chip gate voltage and threshold voltage;

[0106] The collector-emitter rise data is determined based on the collector current, DC voltage, parasitic inductance of the IGBT operating circuit, and rise time period, in order to monitor the short-circuit current rise process based on the collector-emitter rise data.

[0107] As can be seen from the above description, the monitoring method for the rise process of IGBT short-circuit current provided in this application first determines the chip gate voltage based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, current rise time, and gate input capacitance. Then, it determines the collector current based on the chip gate voltage and threshold voltage. Finally, it determines the collector-emitter rise data based on the collector current, DC voltage, IGBT working circuit parasitic inductance, and rise time period to monitor the rise process of short-circuit current. This reduces the number of measuring devices and is more economical and safer.

[0108] In another embodiment, the monitoring device for the rise of the IGBT short-circuit current can be configured separately from the central processing unit 9100. For example, the monitoring device for the rise of the IGBT short-circuit current can be configured as a chip connected to the central processing unit 9100, and the function of the monitoring method for the rise of the IGBT short-circuit current can be realized through the control of the central processing unit.

[0109] like Figure 8 As shown, the electronic device 9600 may further include: a communication module 9110, an input unit 9120, an audio processor 9130, a display 9160, and a power supply 9170. It is worth noting that the electronic device 9600 does not necessarily need to include these components. Figure 8 All components shown; in addition, the electronic device 9600 may also include Figure 8 For components not shown, please refer to existing technologies.

[0110] like Figure 8 As shown, the central processing unit 9100, sometimes also referred to as a controller or operating control, may include a microprocessor or other processor device and / or logic device, which receives inputs and controls the operation of various components of the electronic device 9600.

[0111] The memory 9140 may be, for example, one or more of a cache, flash memory, hard drive, removable media, volatile memory, non-volatile memory, or other suitable devices. It may store the aforementioned failure-related information, and also store a program for executing that information. The central processing unit 9100 may execute the program stored in the memory 9140 to perform information storage or processing, etc.

[0112] Input unit 9120 provides input to central processing unit 9100. Input unit 9120 may be, for example, a keypad or touch input device. Power supply 9170 provides power to electronic device 9600. Display 9160 displays images and text. Display may be, for example, an LCD display, but is not limited thereto.

[0113] The memory 9140 can be a solid-state memory, such as a read-only memory (ROM), random access memory (RAM), a SIM card, etc. It can also be a memory that retains information even when power is off, can be selectively erased, and contains more data; examples of this type of memory are sometimes referred to as EPROMs. The memory 9140 can also be some other type of device. The memory 9140 includes a buffer memory 9141 (sometimes referred to as a buffer). The memory 9140 may include an application / function storage unit 9142 for storing application programs and function programs or processes for executing the operation of the electronic device 9600 via the central processing unit 9100.

[0114] The memory 9140 may also include a data storage unit 9143 for storing data, such as contacts, digital data, pictures, sounds, and / or any other data used by the electronic device. The driver storage unit 9144 of the memory 9140 may include various drivers for the electronic device's communication functions and / or for performing other functions of the electronic device (such as messaging applications, address book applications, etc.).

[0115] The communication module 9110 is a transmitter / receiver 9110 that transmits and receives signals via the antenna 9111. The communication module (transmitter / receiver) 9110 is coupled to the central processing unit 9100 to provide input signals and receive output signals, which can be the same as in a conventional mobile communication terminal.

[0116] Based on different communication technologies, multiple communication modules 9110 can be configured in the same electronic device, such as cellular network modules, Bluetooth modules, and / or wireless LAN modules. The communication module (transmitter / receiver) 9110 is also coupled to a speaker 9131 and a microphone 9132 via an audio processor 9130 to provide audio output via the speaker 9131 and receive audio input from the microphone 9132, thereby realizing typical telecommunications functions. The audio processor 9130 may include any suitable buffer, decoder, amplifier, etc. Additionally, the audio processor 9130 is coupled to a central processing unit 9100, enabling on-device recording via the microphone 9132 and on-device playback of stored sound via the speaker 9131.

[0117] This invention also provides a computer-readable storage medium capable of implementing all steps of the IGBT short-circuit current rise monitoring method in the above embodiments, where the execution subject is a server or client. The computer-readable storage medium stores a computer program that, when executed by a processor, implements all steps of the IGBT short-circuit current rise monitoring method in the above embodiments. For example, when the processor executes the computer program, it implements the following steps:

[0118] The chip gate voltage is determined based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, current rise time, and gate input capacitance.

[0119] The collector current is determined based on the chip gate voltage and threshold voltage;

[0120] The collector-emitter rise data is determined based on the collector current, DC voltage, parasitic inductance of the IGBT operating circuit, and rise time period, in order to monitor the short-circuit current rise process based on the collector-emitter rise data.

[0121] In summary, the computer-readable storage medium of this invention first determines the chip gate voltage based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, current rise time, and gate input capacitance. Then, it determines the collector current based on the chip gate voltage and threshold voltage. Finally, it determines the collector-emitter rise data based on the collector current, DC voltage, IGBT working circuit parasitic inductance, and rise time period to monitor the short-circuit current rise process. This reduces the number of measurement devices and is more economical and safer.

[0122] This invention also provides a computer program product capable of implementing all steps of the IGBT short-circuit current rise monitoring method described above, where the execution subject is a server or client. The computer program product includes a computer program / instruction that, when executed by a processor, implements all steps of the IGBT short-circuit current rise monitoring method described above. For example, when the processor executes the computer program, it implements the following steps:

[0123] The chip gate voltage is determined based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, current rise time, and gate input capacitance.

[0124] The collector current is determined based on the chip gate voltage and threshold voltage;

[0125] The collector-emitter rise data is determined based on the collector current, DC voltage, parasitic inductance of the IGBT operating circuit, and rise time period, in order to monitor the short-circuit current rise process based on the collector-emitter rise data.

[0126] In summary, the computer program product of this invention first determines the chip gate voltage based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, current rise time, and gate input capacitance. Then, it determines the collector current based on the chip gate voltage and threshold voltage. Finally, it determines the collector-emitter rise data based on the collector current, DC voltage, IGBT working circuit parasitic inductance, and rise time period to monitor the short-circuit current rise process. This reduces the number of measurement devices and is more economical and safer.

[0127] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to interchangeably. Each embodiment focuses on its differences from other embodiments. In particular, hardware + program embodiments are relatively simple in description because they are fundamentally similar to method embodiments; relevant parts can be referred to the descriptions in the method embodiments.

[0128] The foregoing has described specific embodiments of this specification. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recited in the claims may be performed in a different order than that shown in the embodiments and may still achieve the desired result. Furthermore, the processes depicted in the drawings do not necessarily require the specific or sequential order shown to achieve the desired result. In some embodiments, multitasking and parallel processing are possible or may be advantageous.

[0129] While this application provides the method operation steps as described in the embodiments or flowcharts, more or fewer operation steps may be included based on conventional or non-inventive labor. The order of steps listed in the embodiments is merely one possible execution order among many and does not represent the only execution order. In actual device or client product execution, the methods shown in the embodiments or drawings can be executed sequentially or in parallel (e.g., in a parallel processor or multi-threaded processing environment).

[0130] While this specification provides method operation steps as described in the embodiments or flowcharts, more or fewer operation steps may be included based on conventional or non-inventive means. The order of steps listed in the embodiments is merely one possible execution order among many and does not represent the only execution order. In actual device or end product execution, the methods shown in the embodiments or drawings may be executed sequentially or in parallel (e.g., in a parallel processor or multi-threaded processing environment, or even a distributed data processing environment). The terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, product, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, product, or apparatus. Without further limitations, the presence of other identical or equivalent elements in the process, method, product, or apparatus that includes said elements is not excluded.

[0131] For ease of description, the above devices are described in terms of function, divided into various modules. Of course, in implementing the embodiments of this specification, the functions of each module can be implemented in one or more software and / or hardware components, or a module that performs the same function can be implemented by a combination of multiple sub-modules or sub-units. The device embodiments described above are merely illustrative. For example, the division of units is only a logical functional division; in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces, or indirect coupling or communication connection between devices or units, and may be electrical, mechanical, or other forms.

[0132] Those skilled in the art will also know that, besides implementing the controller using purely computer-readable program code, the same functions can be achieved by logically programming the method steps, making the controller function as logic gates, switches, application-specific integrated circuits (ASICs), programmable logic controllers (PLCs), and embedded microcontrollers. Therefore, such a controller can be considered a hardware component, and the devices within it used to implement various functions can also be considered structures within that hardware component. Alternatively, the devices used to implement various functions can be considered as both software modules implementing the method and structures within a hardware component.

[0133] This invention is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0134] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0135] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0136] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0137] Memory may include non-persistent storage in computer-readable media, such as random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM. Memory is an example of computer-readable media.

[0138] Computer-readable media includes both permanent and non-permanent, removable and non-removable media that can store information using any method or technology. Information can be computer-readable instructions, data structures, modules of programs, or other data. Examples of computer storage media include, but are not limited to, phase-change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, CD-ROM, digital versatile optical disc (DVD) or other optical storage, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other non-transferable medium that can be used to store information accessible by a computing device. As defined herein, computer-readable media does not include transient computer-readable media, such as modulated data signals and carrier waves.

[0139] Those skilled in the art will understand that the embodiments of this specification can be provided as methods, systems, or computer program products. Therefore, the embodiments of this specification can take the form of entirely hardware embodiments, entirely software embodiments, or embodiments combining software and hardware aspects. Furthermore, the embodiments of this specification can take the form of computer program products implemented on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0140] The embodiments described in this specification can be described in the general context of computer-executable instructions, such as program modules, that are executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, etc., that perform a specific task or implement a specific abstract data type. The embodiments of this specification can also be practiced in distributed computing environments where tasks are performed by remote processing devices connected via a communication network. In distributed computing environments, program modules can reside in local and remote computer storage media, including storage devices.

[0141] The embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on its differences from other embodiments. In particular, system embodiments are basically similar to method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions in the method embodiments. In the description of this specification, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the embodiments in this specification. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described can be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0142] The above description is merely an embodiment of the present specification and is not intended to limit the embodiments of the present specification. For those skilled in the art, various modifications and variations can be made to the embodiments of the present specification. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principle of the embodiments of the present specification should be included within the scope of the claims of the embodiments of the present specification.

Claims

1. A method for monitoring the rise process of IGBT short-circuit current, characterized in that, include: The chip gate voltage is determined based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, current rise time, and gate input capacitance. The collector current is determined based on the chip gate voltage and threshold voltage; The collector-emitter rise data is determined based on the collector current, DC voltage, parasitic inductance of the IGBT operating circuit, and rise time period to monitor the short-circuit current rise process; the collector-emitter rise data includes the collector-emitter voltage and the power loss during the collector-emitter rise process.

2. The method for monitoring the rise process of IGBT short-circuit current according to claim 1, characterized in that, The collector-emitter rise data includes the collector-emitter voltage and the power loss during the collector-emitter rise process. The collector-emitter rise data is determined based on the collector current, DC voltage, IGBT operating circuit parasitic inductance, and rise time period, including: The collector-emitter voltage is determined based on the collector current, the DC voltage, and the parasitic inductance of the IGBT operating circuit. The power loss during the collector-emitter rise process is determined based on the collector-emitter voltage and the rise time period.

3. The method for monitoring the rise process of IGBT short-circuit current according to claim 1, characterized in that, Also includes: The gate input capacitance is determined based on the gate-emitter capacitance and the collector-gate capacitance.

4. The method for monitoring the rise process of IGBT short-circuit current according to claim 1, characterized in that, The gate power supply voltage includes the gate turn-on power supply voltage; Determining the chip gate voltage based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, the current rise time, and the gate input capacitance includes: The gate current is determined based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, the current rise time, and the gate input capacitance. The chip gate voltage is determined based on the gate current, the gate turn-on power supply voltage, the gate turn-on resistance, and the gate circuit parasitic inductance.

5. A monitoring device for the rise process of IGBT short-circuit current, characterized in that, include: The chip gate voltage module is used to determine the chip gate voltage based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, current rise time, and gate input capacitance. A collector current module is used to determine the collector current based on the chip gate voltage and threshold voltage. The rise monitoring module is used to determine collector-emitter rise data based on the collector current, DC voltage, parasitic inductance of the IGBT working circuit, and rise time period, so as to monitor the short-circuit current rise process based on the collector-emitter rise data; the collector-emitter rise data includes collector-emitter voltage and power loss during the collector-emitter rise process.

6. The monitoring device for the rise process of IGBT short-circuit current according to claim 5, characterized in that, The collector-emitter rise data includes the collector-emitter voltage and the power loss during the collector-emitter rise process. The rise monitoring module includes: The collector-emitter voltage unit is used to determine the collector-emitter voltage based on the collector current, the DC voltage, and the parasitic inductance of the IGBT operating circuit. The rise process power loss unit is used to determine the collector-emitter rise process power loss based on the collector-emitter voltage and the rise time period.

7. The monitoring device for the rise process of IGBT short-circuit current according to claim 5, characterized in that, Also includes: A gate input capacitor module is used to determine the gate input capacitance based on the gate-emitter capacitance and the collector-gate capacitance.

8. The monitoring device for the rise process of IGBT short-circuit current according to claim 5, characterized in that, The gate power supply voltage includes the gate turn-on power supply voltage; The chip gate voltage module includes: A gate current unit is used to determine the gate current based on the gate power supply voltage, gate turn-on resistance, gate circuit parasitic inductance, the current rise time, and the gate input capacitance. A chip gate voltage unit is used to determine the chip gate voltage based on the gate current, the gate turn-on power supply voltage, the gate turn-on resistance, and the gate circuit parasitic inductance.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and running on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the monitoring method for the rise process of IGBT short-circuit current as described in any one of claims 1 to 4.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the steps of the monitoring method for the rise process of IGBT short-circuit current as described in any one of claims 1 to 4.

11. A computer program product, comprising a computer program / instructions, characterized in that, When the computer program / instructions are executed by the processor, they implement the steps of the monitoring method for the rise process of IGBT short-circuit current as described in any one of claims 1 to 4.

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