Semiconductor structure and method of forming the same

Abstract

A semiconductor structure and a method for forming the same are disclosed. The semiconductor structure includes a micro semiconductor element and a support member. The micro semiconductor element has a first surface and a second surface opposite to each other. The micro semiconductor element includes a first electrode and a second electrode disposed on the first surface and separated from each other. The support member is disposed on the micro semiconductor element and corresponds to a region between a main body portion of the first electrode and the second electrode. The support member has a ring-shaped cross section when viewed from the micro semiconductor element.

Description

Technical Field

[0001] This invention relates to semiconductor structures and methods of forming the same, and particularly to semiconductor structures including support members and methods of forming the same. Background Technology

[0002] With the evolution of optoelectronic technology, various types of display devices are constantly improving their characteristics, such as increasing resolution, reducing size, and saving energy. Micro light-emitting diode (μLED) display devices are one such important development. The advantages of μLEDs include low power consumption, high brightness, high resolution, and high color saturation; therefore, μLED display devices are considered the mainstream of the next generation of display technology. However, the fabrication process of μLEDs still faces many technical challenges.

[0003] Miniature light-emitting diodes (LEDs) represent the miniaturization of traditional LEDs to the order of 100 micrometers or even tens of micrometers. At this scale, the number of LEDs within the same area increases dramatically, posing significant challenges for mass transfer. After fabricating miniature LEDs on a growth substrate, a support structure (also known as a weakening structure) can be formed to reduce the connection between the miniature LEDs and the substrate. Then, precise pick-up techniques (such as electrostatic transfer molds) are used to extract the miniature LEDs and transfer them in large quantities to another target substrate. Currently, the weakening structures between the miniature LEDs and the substrate are broadly classified into tethered and anchored types. However, tethered weakening structures occupy additional area, thus affecting the number of miniature LEDs that can be produced on a single wafer. Anchored weakening structures are also prone to extraction defects. Therefore, while existing micro-semiconductor structures and their fabrication methods largely meet the original requirements, they are not entirely satisfactory in every aspect. Summary of the Invention

[0004] Some embodiments of the present invention provide a semiconductor structure including a micro-semiconductor element and a support member. The micro-semiconductor element has a first surface and a second surface opposite to each other, and the micro-semiconductor element includes a first electrode and a second electrode disposed on the first surface and separated from each other. The support member is located on the micro-semiconductor element and is disposed in a region corresponding to a body portion of the first electrode and the second electrode. Viewed from above, the support member has an annular cross-section.

[0005] Some embodiments of the present invention provide a method for forming a semiconductor structure, including providing a micro semiconductor element having a first surface and a second surface opposite to each other, wherein the micro semiconductor element includes a first electrode and a second electrode disposed on the first surface and separated from each other; and forming a support member located on the micro semiconductor element, wherein the support member is disposed in a region corresponding to a body portion of the first electrode and the second electrode, wherein, viewed from above, the support member has an annular cross section. Attached Figure Description

[0006] Figure 1 This is a top view schematic diagram of a semiconductor device according to some embodiments of the present invention;

[0007] Figures 2A to 2I This is a schematic diagram of a semiconductor structure according to some embodiments of the present invention at some intermediate manufacturing stages to obtain a semiconductor structure including a support member;

[0008] Figure 3A This is an enlarged schematic diagram of a semiconductor structure according to some embodiments of the present invention;

[0009] Figure 3B yes Figure 3A A top-down view;

[0010] Figures 4A to 4M This is a cross-sectional schematic diagram of another semiconductor structure according to some embodiments of the present invention at various intermediate manufacturing stages to obtain another semiconductor structure including a support member.

[0011] Symbol Explanation

[0012] 1: Semiconductor devices

[0013] 10, 300, 400: Semiconductor Structure

[0014] 100:Substrate

[0015] E1,217: First electrode

[0016] E1-M, 217M: Main body

[0017] 217E: Extension

[0018] E2,218: Second electrode

[0019] SB: Support component

[0020] 200: Micro-semiconductor components

[0021] 2001: The First Surface

[0022] 2002: The Second Surface

[0023] 210: Epitaxial stack

[0024] 211: First semiconductor layer

[0025] 212: Emissive layer

[0026] 213: Second semiconductor layer

[0027] 215: Conductive layer

[0028] 216: Protective layer

[0029] 216a, 217a, 218a, 220a, 231a, 232a, 240a, 260a, 402a: Top surface

[0030] 211b, 232b: Bottom surface

[0031] 220,420: First Sacrifice Layer

[0032] 220h, 420h: Holes

[0033] 223,423: Air gap

[0034] 224, 225, 226, 424, 425: Air gap section

[0035] 230, 430: Supporting structure

[0036] 230h, 430h: Notch

[0037] 231,431: Suspension Part

[0038] 232,432: Lining

[0039] 2321,4321: Bottom

[0040] 2322, 4322: Annular lateral wall

[0041] 240,440: Second Sacrifice Layer

[0042] 243,245,443,445: Gaps

[0043] 250: Connecting components

[0044] 260: Adhesive material layer

[0045] 402: First adhesive layer

[0046] 410: First connecting component

[0047] 450: Second connection component

[0048] 460: Second adhesive layer

[0049] A1: Area

[0050] S1: First substrate

[0051] S2: Second substrate

[0052] S3: Third substrate

[0053] WS2, WS1, W1: Width

[0054] CD: Critical Size

[0055] AE,AS: Vertical projection range

[0056] D1: First Direction

[0057] D2: Second Direction

[0058] D3: Third direction Detailed Implementation

[0059] To make the description of this invention more detailed and complete, the following provides an illustrative description of the embodiments and specific examples of this invention. Of course, these embodiments are merely examples and are not intended to limit the form of implementation or application of the embodiments of this invention. In some other embodiments, the components of the embodiments may be combined with or substituted for each other. Other embodiments may also be added to one embodiment without further description or explanation. Furthermore, it is understood that although terms such as "first," "second," and "third" may be used in embodiments or examples to describe various components, components, regions, layers, and / or portions, these components, components, regions, layers, and / or portions are not limited by these terms, and these terms are only used to distinguish different components, components, regions, layers, and / or portions. Therefore, the first component, component, region, layer, and / or portion discussed in the embodiments or examples may be referred to as the second component, component, region, layer, and / or portion without departing from the teachings of this invention.

[0060] Furthermore, the component configurations discussed in the embodiments are merely illustrative. For example, if the description mentions a first component formed above or on a second component, it may include embodiments where the first and second components are in direct contact, or embodiments where an additional component is formed between the first and second components, so that the first and second components are not in direct contact.

[0061] Furthermore, spatially related terms such as "below," "under," "below," "above," "above," and other similar terms may be used in the description to simplify the description of the relationships between one layer / component and other layers / components as shown in the figures. These spatially related terms include not only the directions depicted in the figures but also the different orientations of the structure during use or operation. The structure can be rotated and positioned in other directions, and the spatially related descriptions used herein can be interpreted accordingly. Additionally, the embodiments of the invention may repeat element symbols and / or letters in many examples. These repetitions are for simplification and clarity and do not in themselves represent a specific relationship between the various embodiments and / or configurations discussed.

[0062] Embodiments of the present invention provide semiconductor structures and methods for forming the same. According to some embodiments, the semiconductor structure includes a semiconductor element, such as a micro-semiconductor element, and a supporting fragment thereon, wherein, viewed from above the micro-semiconductor element, the supporting fragment has a circular breaking surface. Furthermore, the supporting fragment of the embodiments corresponds, for example, to a first surface or an opposite second surface of the semiconductor element, without occupying additional lateral space on the substrate, thereby increasing the number of semiconductor elements that can be fabricated on the substrate. Moreover, the supporting structure formed according to some embodiments of the semiconductor structure formation method also has the advantage of being easily breakable.

[0063] The invention is described more fully below with reference to the accompanying drawings and the following description of embodiments. However, the invention may be embodied in various different forms and should not be limited to the embodiments described herein. The thicknesses of layers and regions in the drawings are enlarged for clarity. The same or similar element reference numerals denote the same or similar elements, which will not be repeated in the following paragraphs.

[0064] Figure 1This is a top view schematic diagram of a semiconductor device according to some embodiments of the present invention. The semiconductor device 1 includes a plurality of semiconductor structures 10 disposed above a substrate 100, and these semiconductor structures 10 are arranged in an array on the substrate 100. For example, the plurality of semiconductor structures 10 are arranged along a first direction D1 and a second direction D2, and adjacent semiconductor structures 10 are spaced apart by an appropriate spacing, but the present invention is not limited thereto. Each semiconductor structure 10 includes, for example, a first electrode E1 and a second electrode E2, wherein the first electrode E1 and the second electrode E2 have opposite electrical properties. Each semiconductor structure 10 also includes a supporting fragment SB generally located between the first electrode E1 and the second electrode E2. For example, in some embodiments, the supporting fragment SB corresponds to a region A1 between a main body portion E1-M of the first electrode E1 and the second electrode E2. Furthermore, the supporting fragment SB may be in direct contact with the first electrode E1 or may not be in direct contact.

[0065] Furthermore, the semiconductor structure in some embodiments is, for example, a micro-semiconductor structure, such as a semiconductor structure containing a micro light-emitting diode (micro LED). For clarity, Figure 1 The relative positions of the first electrode E1, the second electrode E2, and the supporting break SB in each semiconductor structure 10 are only shown as examples.

[0066] The following presents methods for forming semiconductor structures according to some embodiments of the present invention, and the resulting semiconductor structures having supporting elements SB. Additionally, extra steps may be provided before, during, and after the methods, and some described steps may be replaced or omitted for other embodiments of the methods.

[0067] Figures 2A to 2I This is a schematic diagram of a semiconductor structure according to some embodiments of the present invention at some intermediate manufacturing stages to obtain a semiconductor structure including a support member. Figures 2A to 2I Only draw as Figure 1 The method of forming a single semiconductor structure 10 is shown for clear explanation.

[0068] Reference Figure 2AAccording to some embodiments, a micro-semiconductor element 200 (e.g., a micro-light-emitting diode) is formed on a first substrate S1. In some embodiments, the first substrate S1 is a growth substrate, for example, containing silicon, sapphire, gallium arsenide, or other suitable materials. An epitaxial stack 210 is formed on the first substrate S1. The epitaxial stack 210 includes, for example, a first semiconductor layer 211, a light-emitting layer 212, and a second semiconductor layer 213, which are sequentially stacked on the first substrate S1 from bottom to top (e.g., along a third direction D3). The first semiconductor layer 211 and the second semiconductor layer 213 have different conductivity types. In some embodiments, the first semiconductor layer 211 is a semiconductor layer with a first conductivity type, such as an n-type semiconductor layer; and the second semiconductor layer 213 is a semiconductor layer with a second conductivity type, such as a p-type semiconductor layer.

[0069] In some embodiments, the first semiconductor layer 211 comprises a III-V group semiconductor, such as a binary epitaxial material comprising gallium nitride (GaN), gallium arsenide (GaAs), gallium phosphide (GaP), indium arsenide (InAs), aluminum nitride (AlN), indium nitride (InN), indium phosphide (InP), or the like. The first semiconductor layer 211 may also comprise a ternary or quaternary epitaxial material, such as aluminum gallium nitride (AlGaN), aluminum gallium arsenide (AlGaAs), indium gallium phosphide (InGaP), indium gallium nitride (InGaN), aluminum indium gallium nitride (AlInGaN), aluminum indium gallium phosphide (AlInGaP), indium gallium arsenide phosphide (InGaAsP), or the like. Furthermore, in some embodiments, the n-type first semiconductor layer 211 can be formed by doping the aforementioned III-V group semiconductor layer with a group IVA element (e.g., silicon). Furthermore, the first semiconductor layer 211 can be a single-layer structure or a multi-layer structure. For simplicity, only a single-layer first semiconductor layer 211 is shown in the figures.

[0070] In some embodiments, the light-emitting layer 212 located on the first semiconductor layer 211 may also be referred to as the active layer. When current passes through the active layer, the active (active) layer can emit light of a specific color. The light-emitting layer 212 may include a multiple quantum well (MQW), a single-quantum well (SQW), a homojunction, a heterojunction, or other similar structures, but the present invention is not limited thereto.

[0071] In some embodiments, the second semiconductor layer 213 located on the light-emitting layer 212 may comprise a binary, ternary, or quaternary epitaxial material of the aforementioned group III-V semiconductor, which will not be repeated here. Furthermore, the second semiconductor layer 213 has a different conductivity type than the first semiconductor layer 211. In some embodiments, the p-type second semiconductor layer 213 can be formed by doping the aforementioned group III-V semiconductor layer with a group IIA element (e.g., beryllium, magnesium, calcium, or strontium). In one example, the first semiconductor layer 211 comprises n-type GaN, and the second semiconductor layer 213 comprises p-type GaN. Furthermore, in some embodiments, the width of the second semiconductor layer 213 is substantially equal to the width of a portion of the underlying light-emitting layer 212, but the invention is not limited thereto.

[0072] In some embodiments, the micro-semiconductor element 200 may further include a conductive layer 215 formed on the second semiconductor layer 213 and a protective layer 216 formed on the conductive layer 215. The conductive layer 215 may include a metal oxide, a metal, a metal alloy, or any suitable conductive material. Examples of the aforementioned metal oxides include indium tin oxide (ITO), indium zinc oxide (IZO), zinc aluminum oxide (AZO), or other suitable metal oxides. Examples of the aforementioned metals include titanium (Ti), nickel (Ni), aluminum (Al), gold (Au), platinum (Pt), chromium (Cr), silver (Ag), copper (Cu), or other suitable metals. In some other embodiments, the conductive layer 215 may be omitted.

[0073] Furthermore, the protective layer 216 covers the first semiconductor layer 211, the light-emitting layer 212, and the second semiconductor layer 213. In some embodiments, the protective layer 216 comprises an insulating material. Moreover, in addition to providing insulation, the protective layer 216 may also have better mechanical strength to protect and prevent damage to the first semiconductor layer 211, the light-emitting layer 212, and the second semiconductor layer 213.

[0074] Furthermore, the protective layer 216 has openings to expose a portion of the first semiconductor layer 211 and a portion of the conductive layer 215 on the second semiconductor layer 213, respectively. In some embodiments, the protective layer 216 can be formed by chemical vapor deposition, printing, coating, or other suitable methods. The openings through the protective layer 216 can be formed by photolithography and etching processes or other suitable fabrication processes.

[0075] In some other embodiments, a reflective layer (not shown) and a barrier layer (not shown) may also be formed on the conductive layer 215, wherein a protective layer 216 is located on the barrier layer (not shown). The reflective layer is configured to reflect light, and the barrier layer is configured to protect and fix the reflective layer to prevent oxidation and peeling. The material of the reflective layer is, for example, silver, aluminum, a silver alloy, or a combination thereof. The material of the barrier layer is, for example, titanium, platinum, gold, nickel, tungsten, a tungsten-titanium alloy, aluminum, a silver alloy, or a combination thereof. In some examples, the reflectivity of the reflective layer is greater than that of the barrier layer. Furthermore, in some examples, a conductive layer 215 (e.g., transparent ITO) located between the second semiconductor layer 213 (e.g., a P-type semiconductor layer) and the reflective layer can improve the current distribution between the second semiconductor layer 213 and the reflective layer.

[0076] According to some embodiments, the micro-semiconductor element 200 has a first surface 2001 and a second surface 2002 opposite to each other. For example... Figure 2A As shown, in this example, the top surface 216a of the protective layer 216 is also a first surface 2001, and the bottom surface 211b of the first semiconductor layer 211 also provides a second surface 2002. Furthermore, in this example, the second surface 2002 is a light-emitting surface of a micro-semiconductor element.

[0077] In some embodiments, the microsemiconductor element 200 further includes a first electrode 217 and a second electrode 218 disposed on the first surface 2001 and separated from each other. An electrode material layer can be formed by suitable techniques such as sputtering or electron beam physical deposition, the electrode material layer filling the opening of the protective layer 216. After the electrode material layer is formed, an annealing process can be performed to increase the ohmic contact between the electrode material and the semiconductor layer. Then, the first electrode 217 and the second electrode 218 are formed by a patterning fabrication process such as etching. Thus, the first electrode 217 is electrically connected to the underlying first semiconductor layer 211 through the opening of the protective layer 216, and the second electrode 218 is electrically connected to the conductive layer 215 and the underlying second semiconductor layer 213 through another opening of the protective layer 216. The first electrode 217 and the second electrode 218 can include any suitable electrode material, such as gold (Au), titanium (Ti), nickel (Ni), aluminum (Al), platinum (Pt), chromium (Cr), silver (Ag), copper (Cu), or other suitable conductive materials.

[0078] In some embodiments, the first electrode 217 includes a main body 217M and an extension 217E. Specifically, the main body 217M of the first electrode 217 is, for example (but not limited to), located on the same horizontal plane as the second electrode 218. The extension 217E connects to the main body 217M and extends toward the second electrode 218 into a region A1 between the main body 217M and the second electrode 218. In this example, an opening in the protective layer 216 that exposes a portion of the first semiconductor layer 211 is located in this region A1, and a portion of the extension 217E fills this opening to electrically connect the first electrode 217 to the first semiconductor layer 211.

[0079] The material and shape configuration of each layer of the micro semiconductor element 200 described above are for illustrative purposes only. Other micro semiconductor elements with different configurations (including different materials and shape configurations of each layer) can also be applied to the embodiments of the present invention, and the present invention does not impose any restrictions on them.

[0080] Then, refer to Figure 2B According to some embodiments, a first sacrificial layer 220 is formed as follows: Figure 2A The micro-semiconductor device 200 shown is covered by a first sacrificial layer 220 formed on and covering the first surface 2001 of the micro-semiconductor device 200. Figure 2B As shown, the first sacrificial layer 220 also covers the first electrode 217 and the second electrode 218. Furthermore, the first sacrificial layer 220 has a hole 220h located between the first electrode 217 and the second electrode 218, for example, corresponding to region A1, and this hole 220h exposes a portion of the first electrode 217. Specifically, in this example, the hole 220h of the first sacrificial layer 220 exposes a portion of the extension 217E of the first electrode 217.

[0081] In some embodiments, the first sacrificial layer 220 comprises benzocyclobutene (BCB), polyimide (PI), or other suitable sacrificial materials, such as any sacrificial material that is easily removable in subsequent manufacturing processes. The first sacrificial layer 220 comprises one or more sacrificial materials. The first sacrificial layer 220 may be a single-layer structure or a multi-layer structure. For simplicity, a single-layer first sacrificial layer 220 is shown in the figures.

[0082] Then, refer to Figure 2CAccording to some embodiments, a material layer is conformally deposited on the first sacrificial layer 220 to form a support structure 230. The support structure 230 includes a suspension portion 231 and a liner portion 232. This material layer is conformally formed in the pores 220h of the first sacrificial layer 220 to form the liner portion 232, and defines a notch 230h.

[0083] In some examples, specifically, the liner 232 includes a bottom 2321 and a circular sidewall 2322. The bottom 2321 is located on the micro-semiconductor element 200, for example, on the first electrode 217 and in contact with the extension 217E. The circular sidewall 2322 is connected to the bottom 2321 and together with the bottom 2321 defines a recess 230h.

[0084] In some examples, specifically, the suspension portion 231 connects to the annular sidewall 2322 of the liner 232 and extends above the first electrode 217 and the second electrode 218. For example, the suspension portion 231 is formed over its entire surface on the top surface 220a of the first sacrificial layer 220. It is noteworthy that the suspension portion 231 does not directly contact the first electrode 217 and the second electrode 218. Figure 2C As shown, the suspension portion 231 is separated from the first electrode 217 and the second electrode 218 by a first sacrificial layer 220 on the third direction D3.

[0085] In some embodiments, the support structure 230 includes an insulating material, a metallic material, or other suitable support material. The aforementioned insulating materials include, but are not limited to, silicon oxide, silicon nitride, silicon oxynitride, ceramic materials, epoxy resin, or other suitable materials. The aforementioned metallic materials include, but are not limited to, aluminum, titanium, gold, platinum, or nickel. Furthermore, in some embodiments, the support structure 230 may be a single-layer structure or a multi-layer structure. For simplicity, only a single-layer support structure 230 is shown in the figures. In some examples, the material layer thickness of the support structure 230 is, for example, approximately 0.5 μm to 5 μm.

[0086] Furthermore, in this example, the support structure 230 and the subsequent support segment formed by the support structure 230 ( Figure 2I The support structure 230 is located on the first surface 2001 (non-light-emitting surface) of the micro-semiconductor element 200, and therefore, a light-transmitting or opaque material can be used to form the support structure 230. However, in other examples where the support structure is formed on the light-emitting surface of the micro-semiconductor element 200, the support structure 230 is formed with a material with high light transmittance (e.g., having a transmittance of ≥80%).

[0087] Then, refer to Figure 2DAccording to some embodiments, a second sacrificial layer 240 is formed at the notch 230h. The top surface 240a of the second sacrificial layer 240 is higher than the top surface 231a of the suspension portion 231 of the support structure 230. It is noteworthy that the width WS2 of the second sacrificial layer 240 in the portion above the support structure 230 (e.g., in the first direction D1) is greater than the width WS1 of the portion filling the notch 230h (e.g., in the first direction D1). It is also noteworthy that the second sacrificial layer 240 forms a columnar filling in the portion below the support structure suspension portion 231, while the second sacrificial layer 240 extends in the D2 direction in the portion above the support structure suspension portion 231, and can even interconnect with the second sacrificial layer on an adjacent chip to facilitate subsequent removal processes.

[0088] In some embodiments, the second sacrificial layer 240 comprises benzocyclobutene (BCB), polyimide (PI), or other suitable sacrificial material. The second sacrificial layer 240 may include one or more sacrificial materials. The second sacrificial layer 240 may contain different or the same material as the first sacrificial layer 220, for example. If the second sacrificial layer 240 and the first sacrificial layer 220 contain the same material, they can be removed simultaneously in the same manner in subsequent manufacturing processes.

[0089] Subsequently, a connecting component 250 is formed on the support structure 230 and the second sacrificial layer 240. For example... Figure 2E , Figure 2F As shown, the connecting component 250 includes, for example, an adhesive material layer 260 and another substrate (second substrate S2).

[0090] Reference Figure 2E According to some embodiments, an adhesive material layer 260 is formed on the support structure 230 and the second sacrificial layer 240. The thickness of the adhesive material layer 260 is sufficient to cover the support structure 230 (e.g., the suspension portion 231) and the second sacrificial layer 240. For example, in this example, the top surface 260a of the adhesive material layer 260 is higher than the top surface 240a of the second sacrificial layer 240.

[0091] In some embodiments, the adhesive layer 260 may include an insulating adhesive, a conductive adhesive, a metal, or other suitable materials, or a combination thereof. In some examples, the adhesive layer 260 may include epoxy resin, silicone, or other suitable insulating adhesive materials, but the invention is not limited thereto. In some examples, the adhesive layer 260 may include epoxy resin mixed with silver powder, or other suitable conductive adhesive materials, but the invention is not limited thereto. In some instances, the adhesive layer 260 may include copper, aluminum, tin, silver, or other suitable metals, but the invention is not limited thereto.

[0092] Furthermore, in some embodiments, the adhesive material layer 260 may be a single-layer structure or a multi-layer structure. For the sake of simplicity, only a single-layer adhesive material layer 260 is shown in the drawings, but the invention is not limited thereto.

[0093] Then, refer to Figure 2F According to some embodiments, a second substrate S2 is disposed on the adhesive material layer 260. The second substrate S2 and the adhesive material layer 260 constitute a connection assembly 250, and the adhesive material layer 260 is located between the support structure 230 and the second substrate S2. In some embodiments, the first substrate S1 and the second substrate S2 are substrates made of the same or different materials, such as silicon, sapphire, or other suitable materials. According to some embodiments, the second substrate S2 can be adhered to the support structure 230 through the adhesive material layer 260 to further increase the bonding force between the second substrate S2 and the support structure 230.

[0094] Then, refer to Figure 2G According to some embodiments, the first substrate S1 is removed. In some embodiments, the first substrate S1 can be removed by peeling, etching, grinding, other suitable methods, or a combination of the foregoing. In one example, the first substrate S1 is removed by laser lift-off (LLO) to detach the first substrate S1 from the first semiconductor layer 211 of the microsemiconductor element 200.

[0095] like Figure 2G As shown, in this example, after the first substrate S1 is removed, the second surface 2002 (e.g., a light-emitting surface) of the micro semiconductor element 200 is exposed, namely the bottom surface 211b of the first semiconductor layer 211.

[0096] Then, refer to Figure 2H According to some embodiments, the first sacrificial layer 220 and the second sacrificial layer 240 are removed. After removing the first sacrificial layer 220, air gaps 223 are formed at the original location of the first sacrificial layer 220 between the first electrode 217 and the second electrode 218 and the support structure 230. In this example, air gaps 223 include air gap portions 224, 225, and 226. More specifically, air gap portions 224 and 225 are formed between the first electrode 217 and the second electrode 218 and the suspension portion 231 of the support structure 230, respectively. Air gap portion 226 is formed around the liner 232 of the support structure 230 (e.g., around the annular sidewall 2322).

[0097] like Figure 2HAs shown, after the removal of the second sacrificial layer 240, a gap 243 is formed at the original location of the second sacrificial layer 240. The gap 243 includes a notch 230h (defined by the bottom 2321 and the annular sidewall 2322 of the liner 232) and a gap portion 245 above the notch 230h. The width of the gap portion 245 in the first direction D1 is greater than the width of the notch 230h in the first direction D1. Furthermore, in some examples, the notch 230h is not adjacent to the micro-semiconductor element 200 and is located between the liner 232 and the connection assembly 250.

[0098] Furthermore, the first sacrificial layer 220 and the second sacrificial layer 240 can be removed by any suitable method to form the air gap 223 and the void 243. For example, one or more suitable chemical solutions can be used to remove the first sacrificial layer 220 and the second sacrificial layer 240 by wet etching. In addition, in some embodiments, the first sacrificial layer 220 and the second sacrificial layer 240 comprise the same material, and the first sacrificial layer 220 and the second sacrificial layer 240 can be removed simultaneously in the same fabrication process (e.g., the same wet etching fabrication process) to form the aforementioned air gap 223 and void 243.

[0099] Furthermore, according to some embodiments, the sacrificial layers (including the first sacrificial layer 220 and the second sacrificial layer 240) and the support structure 230 contain different materials, and the support structure 230 is not substantially removed when the sacrificial layer is removed. Moreover, the removal of the sacrificial layers does not substantially remove or damage other material layers, for example, the first semiconductor layer 211, the light-emitting layer 212, the second semiconductor layer 213, the first electrode 217, the second electrode 218, and the adhesive layer 260 are not removed or damaged. Therefore, in some embodiments, the chemical solvents used to remove the first sacrificial layer 220 and the second sacrificial layer 240 have a high selectivity for the materials of the sacrificial layers and the materials of the other structures / layers mentioned above. After the first sacrificial layer 220 and the second sacrificial layer 240 are removed, the other structures / layers are substantially intact.

[0100] Then, refer to Figure 2I According to some embodiments, the support structure 230 is broken to form a semiconductor structure 300 containing the support break SB. The support structure 230 can be broken by pressing, twisting, bending, other suitable methods, or a combination of the foregoing. When the support structure 230 breaks, the remaining portion of the support structure 230 may remain on the micro-semiconductor element 200 or be removed.

[0101] Based on this example, for the second substrate S2 of the structure proposed in the embodiment ( Figure 2H When a light external force is applied to press down on the support structure 230, the support structure 230 is prone to break at the connection between the liner 232 and the suspension part 231. Figure 2IAs shown, after the support structure 230 is disconnected, the liner 232 remains on the microsemiconductor element 200, for example, on the extension 217E of the first electrode 217. In some embodiments, the remaining liner 232 may also be referred to as the support break SB, and may remain on the microsemiconductor element 200 without being removed.

[0102] According to the semiconductor structure proposed in the embodiment, the suspension portion 231 of the support structure 230 is supported by a relatively small liner 232, and the actual contact area between the suspension portion 231 and the liner 232 is very small, thus significantly reducing the external force required to disconnect the support structure 230. Even if the size of the micro-semiconductor element 200 to be manufactured is miniaturized, the liner 232 still has a relatively small contact area ratio relative to the suspension portion 231, which facilitates subsequent removal of the micro-semiconductor element 200 by a pickup device. Furthermore, the air gap 223 between the suspension portion 231 and the electrodes (i.e., the first electrode 217 and the second electrode 218) provides movable space for the support structure 230 after it is pressed down. Therefore, the support structure 230 of the embodiment has the advantage of being easy to disconnect, similar to a conventional tether weakened structure, which facilitates subsequent pickup and transfer. In addition, the support structure 230 of the embodiment can be located above the micro-semiconductor element 200 (in this example; e.g. Figure 2I (as shown) or below (see subsequent examples; such as) Figure 4M As shown), it does not occupy additional area on the substrate (e.g., occupying lateral space), thus increasing the number of semiconductor structures 300 that can be produced on a single wafer, reducing wafer area waste, and having similar benefits to traditional anchor weakening structures.

[0103] According to some embodiments, a picking device can be used to break the support structure 230 and separate the semiconductor structure 300 containing the broken support element SB. Figure 2I The semiconductor structures 300 are then disposed on a transfer substrate (not shown). These semiconductor structures 300 are then electrically bonded to another carrier substrate (not shown) via a first electrode 217 and a second electrode 218. In some embodiments, this carrier substrate may be a rigid printed circuit board, a flexible printed circuit board, a high thermal conductivity aluminum substrate, a ceramic substrate, a metal composite material substrate, a light-emitting substrate, or a semiconductor substrate having functional elements such as transistors or integrated circuits. In some embodiments, this carrier substrate may be a glass substrate having a thin-film transistor (TFT) or a micro-drive circuit (microIC).

[0104] Furthermore, although a portion of the support break SB in this example protrudes beyond the first electrode 217 and the second electrode 218, the top surface 232a of the support break SB only slightly exceeds the top surface 217a of the first electrode 217 and the top surface 218a of the second electrode 218. Moreover, when subsequently electrically bonded to other substrates (e.g., circuit boards), the bonding layers of these other substrates also have openings corresponding between the first electrode 217 and the second electrode 218, and the bonding layers themselves have thickness. Therefore, according to some embodiments, the support break SB remaining on the micro-semiconductor element 200 does not affect the subsequent electrical bonding of the first electrode 217, the second electrode 218, and other substrates.

[0105] Reference Figure 3A , Figure 3B . Figure 3A This is an enlarged schematic diagram of a semiconductor structure 300 according to some embodiments of the present invention. Figure 3B yes Figure 3A A top-down view. Figure 3A , Figure 3B In and above Figures 2A to 2I The same reference numbers are used for the same components, and the details of these components in the above embodiments can be referred to, and will not be repeated here.

[0106] like Figure 3A As shown, the semiconductor structure 300 includes a micro-semiconductor element 200 and a support break SB. The micro-semiconductor element 200 includes, for example, a first semiconductor layer 211, a light-emitting layer 212, a second semiconductor layer 213, a conductive layer 215, a protective layer 216, a first electrode 217, and a second electrode 218. In some examples, after the support structure 230 breaks, the liner 232 remaining on the micro-semiconductor element 200 is the support break SB, which includes a bottom 2321 and an annular sidewall 2322 connecting the bottom 2321. In some examples, the bottom 2321 of the support break SB is disposed on an extension 217E of the first electrode 217.

[0107] In some embodiments, the support member SB has a U-shaped cross section. For example... Figure 3A As shown, the support member SB can be considered as a hollow cylinder with an opening (e.g., a notch 230h) and this opening is oriented away from the first surface 2001.

[0108] According to some embodiments, the support element SB has a top surface 232a and a bottom surface 232b opposite to each other, with the bottom surface 232b located on the micro-semiconductor element 200. For example... Figure 3BAs shown, when viewed from above, the top surface 232a of the supporting member SB presents a circular breaking surface. In this example, the aforementioned top surface 232a (circular breaking surface) is further away from the micro-semiconductor element 200 than the bottom surface 232b.

[0109] Furthermore, such as Figure 3B As shown, in some embodiments, the support member SB is recessed within the region A1 between the main body 217M of the first electrode 217 and the second electrode 218. More specifically, the first electrode 217 and the second electrode 218 are separated from each other in the first direction D1, and one of the first electrode 217 and the second electrode 218 has an electrode width W1 in the second direction D2. The support member SB has a critical dimension CD in the second direction D2, which is smaller than the electrode width W1.

[0110] Additionally, in some embodiments, such as Figure 3A , Figure 3B The semiconductor structure 300 shown has a vertical projection range of the top surface 232a (annular cross-section) of the supporting component SB onto the second surface 2002 of the micro-semiconductor element 200, which includes an outer diameter range AE and an inner diameter range AS (i.e., AE > AS). According to some embodiments, when the ratio of the area of ​​the top surface 232a (annular cross-section) of the supporting component SB to the total area of ​​the micro-semiconductor element 200 is greater than 10%, the success rate of picking up the micro-semiconductor element 200 decreases due to excessive support force. Conversely, when the ratio of the area of ​​the top surface 232a (annular cross-section) of the supporting component SB to the total area of ​​the micro-semiconductor element 200 is less than 0.1%, after removing the first sacrificial layer 220 and the second sacrificial layer 240, insufficient support force can easily lead to the semiconductor element 200 falling off, resulting in abnormal die defects. In other words, a better yield is achieved when the ratio of the top surface 232a (annular cross-section) of the supporting component SB to the total area of ​​the micro-semiconductor element 200 is between 0.1% and 10%. According to some embodiments, the micro-semiconductor element 200 has dimensions of 40 μm × 20 μm, the diameter of AE is 8 μm, the diameter of AS is 4 μm, and the annular wall thickness of the top surface 232a (annular cross-section) of the supporting component SB is 2 μm. Therefore, the area of ​​the top surface 232a (annular cross-section) accounts for approximately 4.7% of the total area of ​​the micro-semiconductor element 200. According to some embodiments, the micro-semiconductor element 200 has dimensions of 100 μm × 50 μm, the diameter of AE is 5 μm, the diameter of AS is 3 μm, and the annular wall thickness of the top surface 232a (annular cross-section) of the supporting component SB is 1 μm. Therefore, the cross-sectional area of ​​the top surface 232a (annular cross-section) accounts for approximately 0.3% of the total area of ​​the micro-semiconductor element 200.

[0111] In addition to the above, Figures 2A to 2I The proposed manufacturing method can also be used to produce the semiconductor structure containing the supporting components in this case through other manufacturing methods. Figures 4A to 4M This is a schematic cross-sectional view of another semiconductor structure at various intermediate manufacturing stages according to some embodiments of the present invention.

[0112] Figures 4A to 4M In and above Figures 2A to 2I Identical or similar components use the same or similar reference numerals, and reference can be made to the information regarding these components in the above embodiments. Figures 2A to 2I The fabricated support member SB is located on a different surface 2001 of the micro-semiconductor element 200, according to... Figures 4A to 4M The fabricated support member SB is located on the second surface 2002 (e.g., the light-emitting surface) of the micro semiconductor element 200.

[0113] Reference Figure 4A According to some embodiments, a micro-semiconductor element 200 is formed on a first substrate S1. The first substrate S1 comprises, for example, silicon, sapphire, or other suitable materials. The micro-semiconductor element 200 includes a first semiconductor layer 211, a light-emitting layer 212, a second semiconductor layer 213, a conductive layer 215, a protective layer 216, a first electrode 217, and a second electrode 218. The first electrode 217 is electrically connected to the underlying first semiconductor layer 211, and the second electrode 218 is electrically connected to the underlying conductive layer 215 and the second semiconductor layer 213. According to some embodiments, the micro-semiconductor element 200 has a first surface 2001 and a second surface 2002 opposite to each other. Figure 4A As shown, in this example, the top surface 216a of the protective layer 216 is also a first surface 2001, and the bottom surface 211b of the first semiconductor layer 211 also provides a second surface 2002. Furthermore, the second surface 2002 is a light-emitting surface of the micro-semiconductor element. In this example, the first electrode 217 and the second electrode 218 are disposed on the first surface 2001 and are separated from each other. Figure 4A For details regarding the configuration, materials, and manufacturing methods of the components / layers shown, please refer to the above. Figure 2A The relevant explanations will not be repeated here.

[0114] Subsequently, a first connection component 410 is formed on the first substrate S1 and the micro semiconductor element 200, such as Figure 4B , Figure 4C As shown. The first connecting component 410 includes, for example, a first adhesive material layer 402 and another substrate (second substrate S2).

[0115] Reference Figure 4BAccording to some embodiments, a first adhesive layer 402 is formed on the first substrate S1 and the micro-semiconductor element 200. The thickness of the first adhesive layer 402 is sufficient to cover the micro-semiconductor element 200. For example, the first adhesive layer 402 covers the sidewalls of the first semiconductor layer 211, the light-emitting layer 212, the second semiconductor layer 213, the conductive layer 215, and the protective layer 216; covers the sidewalls and top surface of the first electrode 217 and the second electrode 218; and covers the exposed portion of the top surface of the protective layer 216. Figure 4B As shown, the top surface 402a of the first adhesive material layer 402 is higher than the top surface 217a of the first electrode 217 and the top surface 218a of the second electrode 218.

[0116] Figure 4B For details regarding the material and manufacturing process of the first adhesive layer 402 shown above, please refer to the above. Figure 2E The details regarding the materials and manufacturing methods of the adhesive layer 260 are not repeated here. Furthermore, in some embodiments, the first adhesive layer 402 may be a single-layer structure or a multi-layer structure. For the sake of simplicity, only a single-layer first adhesive layer 402 is shown in the drawings, but the invention is not limited thereto.

[0117] Then, refer to Figure 4C According to some embodiments, a second substrate S2 is disposed on the first adhesive material layer 402. The second substrate S2 and the first adhesive material layer 402 constitute a first connection component 410, and the second substrate S2 passes through the first adhesive material layer 402 without directly contacting the first electrode 217 and the second electrode 218. The second substrate S2 is, for example, a substrate comprising silicon, sapphire, or other suitable materials. In some embodiments, the first substrate S1 and the second substrate S2 are, for example, substrates comprising the same material.

[0118] Then, refer to Figure 4D According to some embodiments, the first substrate S1 is removed. In some embodiments, the first substrate S1 can be removed by peeling, etching, grinding, other suitable methods, or a combination of the foregoing. In one example, the first substrate S1 is removed by separating it from the first semiconductor layer 211 of the microsemiconductor element 200 using a laser lift-off (LLO) method.

[0119] like Figure 4D As shown, in this example, after the first substrate S1 is removed, the second surface 2002 (e.g., a light-emitting surface) of the micro semiconductor element 200 is exposed, namely the bottom surface 211b of the first semiconductor layer 211.

[0120] Then, refer to Figure 4E According to some embodiments, a first sacrificial layer 420 is formed as follows: Figure 4AThe micro-semiconductor element 200 is shown. Specifically, a first sacrificial layer 420 is formed on and covers the second surface 2002 of the micro-semiconductor element 200, and the first sacrificial layer 420 has a hole 420h exposing the second surface 2002. Furthermore, according to this example, the hole 420h of the first sacrificial layer 420 corresponds to the area between the body portion 217M of the first electrode 217 and the second electrode 218. After subsequent fabrication processes are completed and the support structure 430 is disconnected, the remaining support break SB corresponds to the position of this hole 420h.

[0121] In some embodiments, the first sacrificial layer 420 comprises benzocyclobutene (BCB), polyimide (PI), or other suitable sacrificial materials, such as any sacrificial material that is easily removable in subsequent manufacturing processes. The first sacrificial layer 420 comprises one or more sacrificial materials. The first sacrificial layer 420 may be a single-layer structure or a multi-layer structure. For simplicity, a single-layer first sacrificial layer 420 is shown in the figures.

[0122] Then, refer to Figure 4F According to some embodiments, a material layer is conformally deposited on the first sacrificial layer 420 to form a support structure 430. The support structure 430 includes a suspension portion 431 and a liner portion 432. The material layer is conformally formed in the pores 420h of the first sacrificial layer 420 to form the liner portion 432 and defines a notch 430h.

[0123] In some examples, the liner 432 includes a bottom 4321 and an annular sidewall 4322. The bottom 4321 is located on the micro-semiconductor element 200, for example, on the second surface 2002 exposed by the aperture 420h. The annular sidewall 4322 is connected to the bottom 4321 and together with the bottom 4321 defines the recess 430h.

[0124] Furthermore, in some examples, specifically, the suspension portion 431 connects to the annular sidewall 4322 of the liner portion 432 and extends along the second direction D2 to cover the first sacrificial layer 420. It is noteworthy that the suspension portion 431 does not directly contact the second surface 2002 of the micro-semiconductor element 200. For example... Figure 4F As shown, the suspension portion 431 and the second surface 2002 of the micro semiconductor element 200 (on the third direction D3) are separated by a first sacrificial layer 420.

[0125] In some embodiments, the support structure 430 includes an insulating material, a metallic material, or other suitable support material. The aforementioned insulating materials include, but are not limited to, silicon oxide, silicon nitride, silicon oxynitride, ceramic materials, epoxy resin, or other suitable materials. The aforementioned metallic materials include, but are not limited to, aluminum, titanium, gold, platinum, or nickel. Furthermore, in some embodiments, the support structure 430 may be a single-layer structure or a multi-layer structure. For simplicity, only a single-layer support structure 430 is shown in the drawings.

[0126] Furthermore, in this example, the support structure 430 and the subsequent support fragment SB left by the support structure 430 ( Figure 4M The support structure 430 is located on the second surface 2002 (light-emitting surface) of the micro-semiconductor element 200, and therefore is formed using a material with high light transmittance. A material with a high light transmittance of at least 80% can be used to form the support structure 430. In some embodiments, the support structure 430 (and the subsequently remaining support segment SB) has a light transmittance greater than or equal to 80%, greater than or equal to 85%, greater than or equal to 90%, or greater than or equal to 90%.

[0127] Then, refer to Figure 4G According to some embodiments, a second sacrificial layer 440 is formed at the notch 430h. The second sacrificial layer 440 protrudes beyond the suspension portion 431 of the support structure 430. In some embodiments, the second sacrificial layer 440 comprises benzocyclobutene (BCB), polyimide (PI), or other suitable sacrificial materials. The second sacrificial layer 440 may include one or more sacrificial materials. In one example, the second sacrificial layer 440 and the first sacrificial layer 420 comprise the same material to be removed simultaneously in the same manner in subsequent fabrication processes. Notably, the second sacrificial layer 440 forms a columnar filler in the portion above the support structure suspension portion 431, while the portion below the support structure suspension portion 431 extends in the second direction D2, and may even interconnect with second sacrificial layers on adjacent chips to facilitate subsequent fabrication processes that remove them together.

[0128] Subsequently, a second connecting component 450 is formed on the support structure 430 and the second sacrificial layer 440. For example... Figure 4H , Figure 4I As shown, the second connection component 450 includes, for example, a second adhesive material layer 460 and another substrate (third substrate S3).

[0129] Reference Figure 4H According to some embodiments, a second adhesive material layer 460 is formed on the support structure 430 and the second sacrificial layer 440. The thickness of the second adhesive material layer 460 is, for example, sufficient to cover the support structure 430 (e.g., the suspension portion 431) and the second sacrificial layer 440.

[0130] Figure 4H For details regarding the material and manufacturing process of the second adhesive layer 460 shown above, please refer to the above. Figure 2E The details regarding the materials and manufacturing methods of the adhesive layer 260 will not be repeated here. Furthermore, in some embodiments, the second adhesive layer 460 may be a single-layer structure or a multi-layer structure. For simplicity, only a single-layer second adhesive layer 460 is shown in the drawings, but the invention is not limited thereto. Moreover, the second adhesive layer 460 may contain the same material as the first adhesive layer 402, or a different material.

[0131] Then, refer to Figure 4I According to some embodiments, a third substrate S3 is disposed on the second adhesive material layer 460. The third substrate S3 and the second adhesive material layer 460 constitute a second connection assembly 450, and the second adhesive material layer 460 is located between the support structure 430 and the third substrate S3. The third substrate S3 is, for example, a substrate comprising silicon, sapphire, or other suitable materials. In some embodiments, the first substrate S1, the second substrate S2, and the third substrate S3 are, for example, substrates comprising the same material, but are not limited thereto. According to some embodiments, the third substrate S3 can be adhered to the support structure 430 through the second adhesive material layer 460 to further increase the bonding force between the third substrate S3 and the support structure 430.

[0132] Then, refer to Figure 4J According to some embodiments, the second substrate S2 is removed. In some embodiments, the second substrate S2 can be removed by peeling, etching, grinding, other suitable methods, or a combination of the foregoing. In one example, the second substrate S2 can be removed by laser lift-off (LLO) to detach the second substrate S2 from the first adhesive layer 402, but the first adhesive layer 402 still covers the microsemiconductor element 200.

[0133] Then, refer to Figure 4K According to some embodiments, the first adhesive layer 402 is removed in a suitable manner. After removing the first adhesive layer 402, the micro-semiconductor element 200 is exposed, including the first surface 2001, the first electrode 217, and the second electrode 218. However, according to an example, this removal step of the first adhesive layer 402 does not cause substantial damage to the second adhesive layer 460. Therefore, the third substrate S3 and the support structure 430 still maintain good adhesion through the second adhesive layer 460.

[0134] Then, refer to Figure 4LAccording to some embodiments, the first sacrificial layer 420 and the second sacrificial layer 440 are removed. After removing the first sacrificial layer 420, air gaps 423 are formed at the location of the first sacrificial layer 420, which was originally between the second surface 2002 of the micro-semiconductor element 200 and the support structure 430. In this example, the air gaps 423 include air gap portions 424 and 425. More specifically, air gap portion 424 is formed below the first electrode 217 and between the second surface 2002 and the suspension portion 431 of the support structure 430; air gap portion 425 is formed below the second electrode 218 and between the second surface 2002 and the suspension portion 431 of the support structure 430.

[0135] like Figure 4L As shown, after the removal of the second sacrificial layer 440, a gap 443 is formed at the original location of the second sacrificial layer 440. The gap 443 includes a notch 430h (defined by the bottom 4321 and the annular sidewall 4322 of the liner 432) and a gap portion 445 above the notch 430h. Furthermore, in some examples, the notch 430h is not adjacent to the micro-semiconductor element 200 and is located between the liner 432 and the second connection assembly 450.

[0136] Furthermore, the first sacrificial layer 420 and the second sacrificial layer 440 can be removed by any suitable method to form air gaps 423 and voids 443. For example, as mentioned above, one or more suitable chemical solutions can be used to remove the first sacrificial layer 420 and the second sacrificial layer 440 by wet etching. In addition, in some embodiments, the first sacrificial layer 420 and the second sacrificial layer 440 comprise the same material, and the first sacrificial layer 420 and the second sacrificial layer 440 can be removed simultaneously in the same fabrication process (e.g., the same wet etching fabrication process) to form the aforementioned air gaps 423 and voids 443.

[0137] Furthermore, the sacrificial layers (including the first sacrificial layer 420 and the second sacrificial layer 440) and the support structure 430 contain different materials, and the support structure 430 is not substantially removed when the sacrificial layer is removed. Moreover, the removal of the sacrificial layer does not substantially remove or damage other material layers, for example, it does not remove or damage the various material layers of the micro-semiconductor element 200 (e.g., the first semiconductor layer 211, the light-emitting layer 212, the second semiconductor layer 213, the first electrode 217, the second electrode 218, and the second adhesive layer 460). Therefore, in some embodiments, the chemical solvents used to remove the first sacrificial layer 420 and the second sacrificial layer 440 have a high selectivity for the materials of the sacrificial layers and the materials of the other structures / layers mentioned above. After the first sacrificial layer 420 and the second sacrificial layer 440 are removed, the other structures / layers are substantially intact.

[0138] Then, refer to Figure 4MAccording to some embodiments, the support structure 430 is broken to form a semiconductor structure 400 containing the support break SB. The support structure 430 can be broken by pressing, twisting, bending, other suitable methods, or a combination of the foregoing. After the support structure 430 is broken, the remaining portion of the support structure 430 may or may not be removed.

[0139] In this example, the contact area between the suspension portion 431 and the liner portion 432 is relatively small. Therefore, after a light external force is applied to the third substrate S3 to damage the support structure 430, the connection between the liner portion 432 and the suspension portion 431 is easily broken. Figure 4M As shown, after the support structure 430 is disconnected, the liner 432 remains on the micro-semiconductor element 200. The remaining liner 432 can also be referred to as the support break SB, and can remain on the micro-semiconductor element 200 without being removed. Unlike... Figure 2I The support break SB remains on the non-light-emitting side of the micro-semiconductor element 200 (e.g., on the extension 217E of the first electrode 217), in this example, the support break SB ( Figure 4M () Remains on the light-emitting surface of the micro-semiconductor element 200, such as the second surface 2002. For example... Figure 4M As shown, the support member SB is in direct contact with the second surface 2002. Furthermore, the support member SB can be considered as a hollow cylinder with an opening (e.g., a notch 430h) facing away from the second surface 2002.

[0140] In addition, as mentioned above Figure 2I , Figure 3A The example support component SB is similar; if viewed from above, this example's semiconductor structure 400 ( Figure 4M The support break SB also has an annular cross section. Furthermore, according to the support break SB of this example, the vertical projection range AE of the extension 217E of the first electrode 217 on the second surface 2002 of the micro-semiconductor element 200 includes the vertical projection range AS of the support break SB on the second surface 2002 of the micro-semiconductor element 200 (that is, AE>AS).

[0141] The semiconductor structure and its formation method of the present invention can be applied not only to traditional light-emitting diodes and micro light-emitting diodes with dimensions reduced to the micrometer (μm) level, but also to displays and wearable devices. Furthermore, the aforementioned light-emitting diodes can be red, green, or blue.

[0142] In summary, according to some embodiments of the present invention, the supporting members formed on the semiconductor element correspond to the first surface or the opposite second surface of the micro-semiconductor element. For example, in some examples, the supporting members are disposed in a region between the main body of the first electrode and the second electrode of the micro-semiconductor element, thus not occupying additional lateral space on the substrate, thereby increasing the number of micro-semiconductor elements that can be produced on a single substrate. Furthermore, the semiconductor structure formation method proposed in the above embodiments, the formed supporting structure 230 / 430 has the benefits of both anchoring and tethering weakening structures. Moreover, the method proposed in the embodiments is simple to manufacture and compatible with existing semiconductor manufacturing processes, suitable for mass production, and can produce high-resolution supporting structures using photolithography.

[0143] Although the present invention has been disclosed above with reference to several preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make any modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A semiconductor structure, comprising: A micro semiconductor element having opposing first and second surfaces, the micro semiconductor element comprising a first electrode and a second electrode disposed on the first surface and separated from each other; as well as A supporting fragment is located on the micro-semiconductor element and is disposed in the region between the main body of the first electrode and the second electrode; Viewed from above, the micro-semiconductor device has a circular breaking surface.

2. The semiconductor structure of claim 1, wherein the supporting member has a U-shaped crosssection.

3. The semiconductor structure of claim 1, wherein the support member has a bottom portion located on the micro-semiconductor element and a circular sidewall connected to the bottom portion.

4. The semiconductor structure of claim 1, wherein the support member is a hollow cylinder with an opening facing away from either the first surface or the second surface.

5. The semiconductor structure of claim 1, wherein the supporting member has opposing bottom surfaces and top surfaces, the bottom surface being located on the micro-semiconductor element, the top surface being the annular cross-section and being further away from the micro-semiconductor element than the bottom surface, and the ratio of the top view area of ​​the annular cross-section to that of the micro-semiconductor element being between 0.1% and 10%.

6. The semiconductor structure of claim 5, wherein the first electrode includes an extension connected to the main body, and the bottom surface of the support member is disposed on the extension of the first electrode.

7. The semiconductor structure of claim 6, wherein a portion of the support member protrudes from the top surface of the first electrode and the top surface of the second electrode.

8. The semiconductor structure of claim 5, wherein the support member is disposed on the second surface of the micro-semiconductor element, and the bottom surface of the support member directly contacts the second surface.

9. The semiconductor structure of claim 1, wherein the main body portion of the first electrode and the second electrode are located on the same horizontal plane, the first electrode has an extension portion connecting the main body portion and extending toward the second electrode into the region between the main body portion and the second electrode, wherein the support member is provided corresponding to the extension portion.

10. The semiconductor structure of claim 9, wherein the vertical projection range of the extension of the first electrode on the second surface of the micro-semiconductor element includes the vertical projection range of the support member on the second surface of the micro-semiconductor element.

11. The semiconductor structure of claim 1, wherein the first electrode and the second electrode are separated from each other in a first direction, and one of the first electrode and the second electrode has an electrode width in a second direction, and the support member has a critical dimension in the second direction, the critical dimension being smaller than the electrode width.

12. The semiconductor structure of claim 1, wherein the supporting element has a transmittance of 80% or more.

13. The semiconductor structure of claim 1, wherein the material of the supporting member comprises silicon oxide, silicon nitride, ceramic material, or a combination thereof.

14. The semiconductor structure of claim 1, wherein the micro semiconductor element comprises a first semiconductor layer, a light-emitting layer on the first semiconductor layer, a second semiconductor layer on the light-emitting layer, a protective layer covering the first semiconductor layer, the light-emitting layer and the second semiconductor layer, a first electrode connecting the first semiconductor layer and a second electrode connecting the second semiconductor layer, wherein the support member and the protective layer are separated by the first electrode or by the first semiconductor layer.

15. A method for forming a semiconductor structure, comprising: A micro semiconductor element having opposing first and second surfaces is provided, wherein the micro semiconductor element includes a first electrode and a second electrode disposed on the first surface and separated from each other; as well as A supporting fragment is formed on the micro-semiconductor element, and the supporting fragment is disposed in the region between the body portion of the first electrode and the second electrode, wherein, viewed from above, the supporting fragment has a circular breaking surface.

16. The method of forming a semiconductor structure as claimed in claim 15, wherein the first electrode includes an extension connected to the main body, and the support member is formed on the extension of the first electrode.

17. The method of forming a semiconductor structure as claimed in claim 16, wherein forming the support member comprises: A first sacrificial layer is formed on the first surface of the micro semiconductor device, the first sacrificial layer covering the first electrode and the second electrode, wherein the first sacrificial layer has a hole located between the first electrode and the second electrode, and the hole exposes a portion of the first electrode; A material layer is conformally deposited on the first sacrificial layer to form a support structure. The material layer forms a liner portion and defines a notch in the hole. The support structure includes the liner portion and a suspension portion that connects the liner portion and extends over the first electrode and the second electrode. A second sacrificial layer is formed at the notch; A connecting component is formed on the support structure and the second sacrificial layer; as well as Remove the first sacrificial layer and the second sacrificial layer.

18. The method of forming a semiconductor structure as claimed in claim 17, wherein the liner includes a bottom located on the micro semiconductor element and an annular sidewall connected to the bottom, and the suspension portion is connected to the annular sidewall.

19. The method of forming a semiconductor structure as claimed in claim 17, wherein after removing the first sacrificial layer and the second sacrificial layer, an air gap is formed between the first electrode and the second electrode and the suspension portion of the support structure.

20. The method of forming a semiconductor structure as claimed in claim 17, wherein after removing the first sacrificial layer and the second sacrificial layer, the notch is not adjacent to the micro-semiconductor element, and the notch is located between the suspension portion and the connecting assembly.

21. The method of forming a semiconductor structure as claimed in claim 17, wherein the provided micro-semiconductor element is disposed on a first substrate, and after forming the second sacrificial layer and before removing the first sacrificial layer and the second sacrificial layer, further comprising: An adhesive layer is applied to the support structure and the second sacrificial layer. A second substrate is disposed on the adhesive material layer, wherein the second substrate and the adhesive material layer constitute the connection assembly; as well as Remove the first substrate.

22. The method of forming a semiconductor structure as claimed in claim 15, wherein the support member is formed on the second surface of the micro-semiconductor element, and the bottom surface of the support member is in direct contact with the second surface.

23. The method of forming a semiconductor structure as claimed in claim 22, wherein forming the support member comprises: A first connection component is formed above the first surface of the micro semiconductor element, and the first connection component covers the first electrode and the second electrode; A first sacrificial layer is formed on the second surface of the micro semiconductor device, and the first sacrificial layer has holes corresponding to the body portion of the first electrode and the second electrode, and the holes expose the second surface; A material layer is conformally deposited on the first sacrificial layer to form a support structure. The material layer forms a liner portion and defines a notch in the hole. The support structure includes the liner portion and a suspension portion that connects the liner portion and extends over the first electrode and the second electrode. A second sacrificial layer is formed at the notch; A second connecting component is formed on the support structure and the second sacrificial layer; as well as Remove the first connecting component; as well as Remove the first sacrificial layer and the second sacrificial layer.

24. The method of forming a semiconductor structure as claimed in claim 23, wherein after removing the first sacrificial layer and the second sacrificial layer, an air gap is formed between the second surface of the micro semiconductor element and the suspension portion of the support structure.

25. The method of forming a semiconductor structure as claimed in claim 23, wherein after removing the first sacrificial layer and the second sacrificial layer, the notch is not adjacent to the micro-semiconductor element, and the notch is located between the suspension portion and the second connecting component.

26. The method for forming a semiconductor structure as described in claim 23, wherein the provided micro-semiconductor element is disposed on a first substrate, and forming the first connection assembly further includes: A first adhesive material layer is formed on the first surface of the micro semiconductor device, and the first adhesive material layer covers the first electrode and the second electrode; as well as A second substrate is disposed on the first adhesive material layer. The second connection component also includes: A second adhesive layer is formed to cover the support structure and the second sacrificial layer; as well as A third substrate is disposed on the second adhesive material layer.

27. The method of forming a semiconductor structure as claimed in claim 26, wherein after forming the first interconnect component, the first substrate is removed to expose the second surface of the micro-semiconductor element; and After the second connection component is formed, the second substrate and the first adhesive layer of the first connection component are removed sequentially to expose the first surface of the micro semiconductor element and the first electrode and the second electrode.

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