A control system, method and electronic equipment for controlling temperature of a reaction chamber

Abstract

The present application provides a control system, method and electronic device for the temperature of a reaction chamber, which are applied to the technical field of control systems. The control system includes: an intracavity temperature detection module, a plurality of heating wire temperature detection modules, and a host computer. The host computer includes: a main controller and a plurality of heating wire controllers. Each heating wire temperature detection module is used to detect the temperature of each heating wire, and each heating wire controller is used to control the working power of each heating wire. When the temperature of the reaction chamber changes and the heating wire needs to be adjusted to the corresponding heating supply, the host computer performs logical judgment and generates corresponding control instructions to different heating wire controllers. The heating wire controller combines the temperature of the corresponding heating wire itself for a second time to determine the specific working power that each heating wire needs to be adjusted to. Based on the calculated adjusted working power, the actual working power of the heating wire is adjusted, so that the heating wire power adjustment accuracy is higher, and the life loss caused by the hysteresis of the heating wire adjustment is reduced.

Description

Technical Field

[0001] The present application relates to the technical field of control systems, and in particular to a control system, method and electronic equipment for controlling the temperature of a reaction chamber. Background Art

[0002] In the field of semiconductor processing technology, atomic layer deposition is an advanced thin film deposition technology, which is mainly realized by using a reaction system consisting of five parts: reaction chamber, source cabinet, gas cabinet, vacuum system and water system. Among them, the stability of the reaction chamber temperature plays a decisive role in the thin film deposition effect.

[0003] However, the existing temperature control scheme for the temperature of the reaction chamber often causes temperature overshoot. That is, during the initial heating process, the temperature of the heating wire in the reaction chamber exceeds the set value. After the overheating, the temperature control scheme will cut off the heating wire to prevent the heating wire temperature from overshooting too high. In this way, the scheme will cause the heating wire to be uncontrollable for some time, exceeding its maximum operating temperature, seriously affecting the service life of the heating wire. Summary of the invention

[0004] In view of this, the embodiments of the present application provide a control system, method and electronic device for controlling the temperature of a reaction chamber to reduce the impact of existing temperature control solutions on the service life of a heating wire.

[0005] In a first aspect, an embodiment of the present application provides a control system for the temperature of a reaction chamber, wherein the control system comprises: an intra-cavity temperature detection module, a plurality of heating wire temperature detection modules, and a host computer; the host computer comprises: a main controller, and a plurality of heating wire controllers; wherein each of the heating wire temperature detection modules is used to detect the temperature of the corresponding heating wire, and each of the heating wire controllers is used to control the working power of the corresponding heating wire; wherein:

[0006] The main controller is used to obtain the temperature of the reaction chamber of the atomic layer deposition system detected by the chamber temperature detection module, and compare the temperature of the reaction chamber with a set chamber operating temperature range, and send different control instructions to each of the heating wire controllers according to different comparison results between the reaction chamber temperature and the chamber operating temperature range;

[0007] Each of the heating wire controllers is used to obtain the temperature of the corresponding heating wire obtained by the corresponding heating wire temperature detection module, receive the control instruction sent by the main controller and determine the adjusted working power of the corresponding heating wire in combination with the obtained temperature of the corresponding heating wire, and adjust the working power of the corresponding heating wire according to the adjusted working power.

[0008] In some possible embodiments, the main controller is further used for:

[0009] If the temperature of the reaction inner cavity is lower than the lower limit threshold of the inner cavity working temperature range, and the temperature difference between the temperature of the reaction inner cavity and the lower limit threshold of the inner cavity working temperature range is greater than a first temperature difference threshold, a first control instruction is sent to each of the heating wire controllers, wherein the first control instruction is used to control the corresponding heating wire to work at the maximum rated power;

[0010] Each of the heating wire controllers is also used to receive the first control instruction and determine the maximum rated operating power of the corresponding heating wire as the adjusted operating power, so that the corresponding heating wire operates at the maximum rated operating power until the temperature difference between the temperature of the reaction cavity and the lower limit threshold of the cavity operating temperature range is less than or equal to the first temperature difference threshold.

[0011] In some possible embodiments, the main controller is further used for:

[0012] If the temperature difference between the temperature of the reaction cavity and the lower limit threshold of the cavity operating temperature range is less than or equal to the first temperature difference threshold, a second control instruction is sent to each heating wire controller respectively, and the second control instruction is used to control the corresponding heating wire to operate at an operating power lower than the maximum rated power.

[0013] In some possible embodiments, each of the heating wire controllers is further used for:

[0014] receiving the second control instruction, and obtaining the temperature value of the heating wire obtained by the corresponding heating wire temperature detection module;

[0015] According to the temperature value of the heating wire and a preset range conversion algorithm, a corresponding adjusted working power is determined, wherein the adjusted working power is less than the maximum rated working power.

[0016] In some possible embodiments, the main controller is further used for:

[0017] If the temperature of the reaction cavity is greater than the upper limit threshold of the cavity working temperature range, and the temperature difference between the temperature and the upper limit threshold of the cavity working temperature range is less than the second temperature difference threshold, a third control instruction is sent to each heating wire controller respectively, and the third control instruction is used to control the corresponding heating wire to operate at a working power corresponding to a preset low temperature value lower than that.

[0018] In some possible embodiments, each of the heating wire controllers is further used for:

[0019] Receive the third control instruction, obtain the temperature value of the heating wire obtained by the corresponding heating wire temperature detection module, and determine the temperature difference between the temperature value of the heating wire and the maximum tolerable temperature value;

[0020] According to the temperature difference between the temperature value of the heating wire and the maximum tolerable temperature value, the corresponding adjustment power is determined according to a preset range conversion algorithm.

[0021] In some possible embodiments, the main controller is further used for:

[0022] If the temperature difference between the temperature of the reaction cavity and the upper threshold of the cavity working temperature range is greater than a second temperature difference threshold, sending a fourth control instruction to each of the heating wire controllers respectively;

[0023] Each of the heating wire controllers is also used to obtain the temperature value of the heating wire obtained by the corresponding heating wire temperature detection module based on receiving the fourth control instruction. If the temperature value of the heating wire is greater than the preset heating wire temperature upper limit threshold, the corresponding heating wire is controlled to be powered off.

[0024] In some possible embodiments, the preset range conversion algorithm represents the conversion relationship between the heating and cooling temperature of each heating wire in the atomic layer deposition system and the working power of the heating wire.

[0025] In a second aspect, an embodiment of the present application provides a method for controlling the temperature of a reaction chamber, wherein the method is applied to the control system for the temperature of the reaction chamber according to the first aspect, and the method includes:

[0026] Acquire the temperature of the reaction chamber of the atomic layer deposition system detected by the chamber temperature detection module, and compare the temperature of the reaction chamber with a set chamber operating temperature range;

[0027] According to the different comparison results between the reaction cavity temperature and the cavity working temperature range, combined with the temperature of each heating wire obtained by each heating wire temperature detection module, the adjusted working power of each heating wire is determined;

[0028] The working power of the corresponding heating wire is adjusted according to the adjustment of the working power.

[0029] In a third aspect, an embodiment of the present application provides an electronic device, wherein the electronic device includes:

[0030] Processor; and

[0031] Memory for storing programs,

[0032] Wherein, the program includes instructions, and when the instructions are executed by the processor, the processor executes the method for controlling the temperature of the reaction chamber described in the second aspect.

[0033] In a fourth aspect, an embodiment of the present application provides a non-transitory computer-readable storage medium storing computer instructions, wherein the computer instructions are used to enable a computer to execute the method for controlling the temperature of a reaction chamber described in the second aspect.

[0034] Beneficial effects of this application:

[0035] The present application provides a control system, method and electronic equipment for the temperature of a reaction chamber, wherein the control system includes: an intra-cavity temperature detection module, a plurality of heating wire temperature detection modules, and a host computer, and the host computer further includes: a main controller and a plurality of heating wire controllers, wherein each heating wire temperature detection module is used to detect the temperature of each heating wire, and each heating wire controller is used to control the working power of each heating wire.

[0036] Specifically, the main controller obtains the temperature of the reaction chamber of the atomic layer deposition system detected by the intra-chamber temperature detection module, and compares the temperature of the reaction chamber with the first temperature threshold. Different control instructions are sent to each heating wire controller according to the comparison result. Each heating wire controller obtains the control instruction and determines the adjusted working power of the corresponding heating wire in combination with the temperature of the heating wire detected by the corresponding heating wire temperature detection module, and adjusts the working power of the corresponding heating wire according to the determined adjusted working power.

[0037] By selecting the embodiment of the present application, when the temperature in the reaction cavity changes and the heating wire needs to be adjusted to the corresponding heating power, the host computer executes the corresponding logical judgment and generates corresponding control instructions to the heating wire controllers corresponding to different heating wires. The heating wire controller secondly combines the temperature of the corresponding heating wire itself to determine the working power to which each specific heating wire needs to be adjusted, and adjusts the actual working power of the heating wire with the adjusted working power calculated in this way, so that the power adjustment accuracy of the heating wire is higher, avoiding the hysteresis of the heating wire adjustment caused by the prior art that only uses the cavity temperature as the basis for adjusting the working power of the heating wire, thereby reducing the damage to the heating wire life caused by the hysteresis of the heating wire adjustment. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Further details, features and advantages of the present application are disclosed in the following description of exemplary embodiments in conjunction with the accompanying drawings, in which:

[0039] Figure 1 A schematic diagram of the structure of an atomic layer deposition system commonly used in the prior art is shown;

[0040] Figure 2 A schematic diagram showing a logical structure of a control system for the temperature of a reaction chamber provided in an embodiment of the present application is shown;

[0041] Figure 3A schematic diagram of the structure of an atomic layer deposition system provided in an embodiment of the present application is shown;

[0042] Figure 4 A schematic flow chart of a method for controlling the temperature of a reaction chamber provided in an embodiment of the present application is shown;

[0043] Figure 5 Another schematic flow chart of a method for controlling the temperature of a reaction chamber provided in an embodiment of the present application is shown;

[0044] Figure 6 A structural block diagram of an exemplary electronic device that can be used to implement an embodiment of the present application is shown. DETAILED DESCRIPTION

[0045] The embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be construed as being limited to the embodiments described herein. Instead, these embodiments are provided to provide a more thorough and complete understanding of the present application. It should be understood that the drawings and embodiments of the present application are only for exemplary purposes and are not intended to limit the scope of protection of the present application.

[0046] It should be understood that the various steps described in the method implementation of the present application can be performed in different orders and / or performed in parallel. In addition, the method implementation may include additional steps and / or omit the steps shown. The scope of the present application is not limited in this respect.

[0047] The term "including" and its variations used in this document are open inclusions, that is, "including but not limited to". The term "based on" means "based at least in part on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one other embodiment"; the term "some embodiments" means "at least some embodiments". Relevant definitions of other terms will be given in the description below. It should be noted that the concepts of "first", "second", etc. mentioned in this application are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.

[0048] It should be noted that the modifications of "one" and "plurality" mentioned in the present application are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more".

[0049] Before describing the reaction chamber temperature control method, device and electronic device provided in the embodiments of the present application, the reaction system of atomic layer deposition in the application scenario of the embodiments of the present application is described here to more clearly understand the system and method provided in the embodiments of the present application. In some embodiments, the reaction system of atomic layer deposition in the application scenario of the present application can be as follows: Figure 1 As shown, it includes the following parts:

[0050] Reaction chamber water system 10, reaction chamber inner cavity 20, wafer 30, vacuum system 40, lower heating wire 50, reaction chamber outer cavity 60, reaction chamber wafer tray 70, reaction chamber air intake system 80, upper heating wire 90, reaction chamber door 100, and temperature detection module K1 of the reaction chamber.

[0051] Among them, the reaction chamber water system 10 is used to add a circulating water system to the outer wall of the reaction chamber to ensure that the outer side of the reaction chamber will not be affected by the internal heating, thereby preventing various safety hazards caused by excessive internal heating temperature. The reaction chamber inner cavity 20 is a physically isolated space used to provide a stable reaction environment for the wafer. Wafer 30 is the core module of the atomic layer deposition reaction. By performing physical and chemical reactions of the reactants on the front of the wafer, the required film layer is grown. The vacuum system 40 is used to provide a vacuum environment for the wafer reaction, so that the entire reaction chamber meets the cavity pressure requirements required in the process.

[0052] The lower heating wire 50 and the upper heating wire 90 are used to ensure that the entire reaction chamber has a controllable heat source during the heating process to maintain the temperature inside the reaction chamber to meet the set conditions. The reaction chamber outer chamber 60 is a stable transition zone for the wafer during the lifting and placement process to reduce the impact of the outside world on the wafer reaction. The reaction chamber wafer tray 70 is used to carry the wafer so that the wafer can undergo a normal process reaction. The reaction chamber air intake system 80 is used to introduce various gases required in the process into the reaction chamber to make them react, and the reaction chamber door 100 is used to take and place the wafer.

[0053] The temperature detection module K1 of the reaction cavity can be a thermocouple, which is specifically used to detect the temperature in the reaction chamber cavity 20, and the detection result of the thermocouple is used as the basis for the chamber temperature control. Based on this, the temperature control scheme of the existing atomic layer deposition reaction system is mainly: the working temperature of the reaction chamber cavity 20 is detected by a thermocouple, and then the amplitude of the heat energy provided by the lower heating wire 50 and the upper heating wire 90 is controlled, so as to achieve the control of the temperature of the entire chamber. However, the above scheme is to directly control the upper and lower heating wires through the thermocouples of the reaction chamber, which is prone to the following disadvantages:

[0054] 1) Temperature overshoot is prone to occur. As described in the background technology, during the initial heating process, the temperature of the heating wire may exceed the set threshold. At this time, the temperature of the heating wire is already too high, but the temperature in the reaction chamber detected by K1 may still be within the set threshold. In this way, when the temperature in the reaction chamber detected by K1 has reached the threshold, the heating wire has exceeded the set temperature range. At this time, the output of the heating wire will be directly cut off through software logic to prevent the temperature of the heating wire from overshooting too high, which will cause the heating wire to be out of control.

[0055] During this process, the temperature of the main controller corresponding to the heating wire will be uncontrollable at some time. When K1 detects that the temperature in the reaction chamber has reached the threshold, the heating wire has already experienced temperature overshoot for a period of time. When the temperature in the reaction chamber detected by K1 reaches the threshold, the corresponding control software will prohibit the heating wire from outputting. This solution has a certain lag, which can easily lead to the state of the heating wire being uncontrollable during some time periods. The temperature of the heating wire itself has exceeded its maximum operating temperature, which seriously affects the service life of the heating wire.

[0056] 2) The efficiency of atomic layer deposition is low. Since the existing temperature control scheme controls the working power of the heating wire based on the detection results of K1, and the specific temperature of the heating wire cannot be known, when the reaction chamber starts to start working and heating up, it is necessary to avoid short-term overheating and overshoot that affects the life of the heating wire. The existing temperature control scheme cannot determine whether the heating wire is overheating without knowing the specific temperature of the heating wire. In order to avoid overheating of the heating wire, the existing temperature control scheme uses a staged heating method to control the heating of the heating wire, which greatly affects the process efficiency of atomic layer deposition.

[0057] For example, within one minute, the maximum rated power is used for 30 seconds, and the remaining 30 seconds are used at low power (for example, only 50% of the maximum rated power). Compared with working at the maximum rated power for 1 minute, which causes the heating wire to exceed the maximum tolerance temperature and affect its life, this staged temperature control scheme heats up slowly, but can protect the heating wire from being damaged by temperature overshoot. Such a staged temperature control scheme sacrifices efficiency in exchange for stable temperature rise, which seriously affects the process efficiency of atomic layer deposition.

[0058] 3) When the heating wire exceeds the operating temperature for a long time, the heating wire components will age, further shortening the life of the heating wire and causing safety risks.

[0059] 4) Due to the control structure of the heating wire, the internal environment temperature control deviation is large, which is easily affected by various external factors (such as the passage of more gas or the process of taking and placing wafers, which will cause a sharp change in the heat in the cavity). As a result, the temperature fluctuates greatly during the stable period, and even when any disturbance occurs, there will be a large temperature change, which will ultimately affect the wafer production process effect.

[0060] Based on the above-mentioned shortcomings of the existing reaction chamber temperature control scheme, the present application provides a reaction chamber temperature control system, method and electronic equipment, wherein, in the first aspect, the present application provides a reaction chamber temperature control system, in some embodiments, the reaction chamber temperature control system can be as follows: Figure 2 As shown, it includes the following parts:

[0061] The cavity temperature detection module, several heating wire temperature detection modules, and the host computer include: a main controller and several heating wire controllers.

[0062] Among them, in order to distinguish different heating wire temperature detection modules, Figure 2 The heating wire temperature detection modules are distinguished and named as: the first heating wire temperature detection module, the second heating wire temperature detection module...the Nth heating wire temperature detection module. Correspondingly, in order to distinguish different heating wires and different heating wire controllers, Figure 2 The same naming method is also adopted in the invention, and each heating wire is distinguished and named as: the first heating wire, the second heating wire...the Nth heating wire. Each heating wire controller is distinguished and named as: the first heating wire controller, the second heating wire controller...the Nth heating wire controller.

[0063] In the embodiment of the present application, the heating wire temperature detection module is used to detect the temperature of the corresponding heating wire, and the heating wire controller is used to control the state of the corresponding heating wire. Specifically, as an implementation method, the number of heating wire temperature detection modules and heating wire controllers depends on the number of heating wires selected by the atomic layer deposition system.

[0064] For example, if the atomic layer deposition system is Figure 1 As shown, only two heating wires, the upper heating wire and the lower heating wire, are included. The number of heating wire temperature detection modules is 2, and the number of heating wire controllers is also 2. One heating wire temperature detection module is responsible for the temperature monitoring of one heating wire, and one heating wire controller is responsible for the state control of one heating wire. The heating wire controller is mainly used to control the working power of the heating wire it is responsible for, and output the heating wire corresponding to the adjusted power value, thereby changing the amount of heat energy provided by the heating wire, that is, in this application, the heating wire-heating wire temperature detection module-heating wire controller is in a 1:1:1 relationship.

[0065] In an embodiment of the present application, the main controller is used to obtain the reaction cavity temperature (assuming it is PV1) of the atomic layer deposition system detected by the cavity temperature detection module, and then compare the reaction cavity temperature PV1 detected by the cavity temperature detection module with the set cavity operating temperature range [T1, T2] to obtain the corresponding comparison result. And according to the comparison results obtained by each comparison, different control instructions are distributed to each heating wire controller. In an embodiment of the present application, the set cavity operating temperature range can be a temperature range generated based on the process temperature entered by the operator in the display interface of the host computer. For example, assuming that the process temperature of a wafer is 300°C, the operator can enter 300°C on the display interface of the host computer, and then the host computer automatically generates a temperature range based on 300°C, such as 300°C ± 1°C or 300°C ± 5°C. As an implementation method, the set cavity operating temperature range can be only a numerical value, that is, T1 = T2.

[0066] As an implementation mode, when the temperature PV1 of the reaction cavity obtained is less than the lower limit threshold value T1 of the cavity working temperature range, the main controller sends a temperature increase control instruction to each heating wire controller, so that the heating wire increases the working power and increases the temperature of the entire reaction cavity. Alternatively, when the main controller determines that PV1 is greater than the upper limit threshold value T2 of the cavity working temperature range, it sends a temperature reduction control instruction to each heating wire controller, so that the heating wire reduces the working power and reduces the temperature of the entire reaction cavity, and finally makes the temperature of the entire reaction cavity fall within the cavity working range.

[0067] In the embodiment of the present application, each heating wire controller is mainly used to obtain the temperature of the corresponding heating wire obtained by the corresponding heating wire temperature detection module. Each heating wire controller is also used to receive the control instruction sent by the main controller, and determine the power to adjust the working power of the corresponding heating wire in combination with the temperature of the heating wire detected by the corresponding heating wire temperature detection module, and finally adjust the working power of the corresponding heating wire according to the determined adjustment power. In the embodiment of the present application, the heating wire temperature detection module can be any functional module or electronic component with a temperature detection function. As an example, the heating wire temperature detection module can be a thermocouple.

[0068] Based on this, as an implementation method, Figure 1 The atomic layer deposition system shown in the figure is based on the reaction chamber temperature detection module K1, or it can be Figure 2 On the basis of the cavity temperature detection module shown, an upper heating wire temperature detection module and a lower heating wire temperature detection module are added, wherein the upper heating wire temperature detection module is used to detect the temperature of the upper heating wire, and the lower heating wire temperature detection module is used to detect the temperature of the lower heating wire.

[0069] As an example, Figure 3 As shown, the reaction cavity temperature detection module K1 (or cavity temperature detection module) can be specifically as follows Figure 3 The thermocouple K31 in the upper heating wire temperature detection module and the lower heating wire temperature detection module can specifically be a thermocouple K32 corresponding to the upper heating wire and a thermocouple K33 corresponding to the lower heating wire. The thermocouple K32 corresponding to the upper heating wire is used to obtain the temperature of the upper heating wire 90, and the thermocouple K33 corresponding to the lower heating wire is used to obtain the temperature of the lower heating wire 50.

[0070] Based on this, in some embodiments, the main controller is specifically used to:

[0071] If the temperature of the reaction inner cavity is lower than the lower limit threshold of the inner cavity working temperature range, and the temperature difference between the temperature of the reaction inner cavity and the lower limit threshold of the inner cavity working temperature range is greater than a first temperature difference threshold, a first control instruction is sent to each of the heating wire controllers, wherein the first control instruction is used to control the corresponding heating wire to work at the maximum rated power;

[0072] Each of the heating wire controllers is also used to receive the first control instruction and determine the maximum rated operating power of the corresponding heating wire as the adjusted operating power, so that the corresponding heating wire operates at the maximum rated operating power until the temperature difference between the temperature of the reaction cavity and the lower limit threshold of the cavity operating temperature range is equal to the first temperature difference threshold.

[0073] As an implementation method, the process temperature required for the produced wafers can be set in the host computer according to the historical process results, and then the set inner cavity operating temperature range is generated according to the process temperature. In other words, the set inner cavity operating temperature range can be set according to the process temperature required for the actual production of wafers, can be set according to actual experience, or can be set according to the historical processing process results, and this application does not strictly limit it.

[0074] As an example, if the atomic layer deposition effect of the wafer of production model A is best in the temperature range of 300±1℃, the set inner chamber operating temperature range is 299℃~301℃. If the atomic layer deposition effect of the wafer of production model B is best in the temperature range of 300±15℃, the set inner chamber operating temperature range is 285℃~315℃.

[0075] Similarly, the first temperature difference threshold can be set according to the historical processing technology effect. As a preferred embodiment, the first temperature difference threshold can be 15°C. Taking the wafer of production model A as an example, if the temperature value detected by the current chamber temperature detection module is PV1, PV1<299°C, and |PV1-299°C|≥15°C, it indicates that the current chamber temperature is still relatively low. At this time, the main controller can directly send the first control instruction to each heating wire controller, and each heating wire controller directly controls each heating wire to work at the maximum rated power according to the first control instruction, so as to speed up the heating speed of the entire reaction chamber and shorten the waiting time.

[0076] Control each heating wire to work at the maximum rated power until |PV1-299|=15℃, or control each heating wire to work at the maximum rated power until |PV1-299|≤15℃ (and PV1≤299℃). At this time, it is no longer necessary to work at the maximum rated power, and the working power of the heating wire can be reduced to slow down the temperature rise rate.

[0077] In addition, in some actual process processing (the wafer processing process is referred to as the process process in this article), it is necessary to continuously introduce process gas into the reaction chamber, and the vacuum pump continuously extracts the gas in the chamber to form convection. In this process, gas is continuously entering and being extracted, thereby taking away the heat in the chamber, and then affecting the temperature in the reaction chamber. In this case, the temperature of the reaction chamber is not greatly affected, but the temperature of the heating wire is greatly affected.

[0078] Alternatively, in some embodiments, at the beginning or after the process is completed, the wafer needs to be placed or removed through the reaction chamber door 100. The opening of the door will cause the temperature in the reaction chamber to diffuse to the inside of the transfer chamber in the form of thermal radiation, further causing the temperature in the reaction chamber to drop. This type of situation does not have a large impact on the temperature of the reaction chamber, but has a large impact on the temperature of the heating wire. For example, during the entire process of opening the reaction chamber door, since the reaction chamber is a metal space, the temperature of the space drops slowly, such as only dropping by 5°C in 3 minutes, but the heating wire usually has a large area, plus gas flow, causing the temperature of the heating wire to drop faster, such as dropping by 10°C in 3 minutes, with a temperature difference of 5°C in between.

[0079] Since the temperature reduction amplitude in the chamber is smaller than the temperature reduction amplitude of the heating wire, at this time, if the temperature control scheme of the prior art is continued to be used to control the working power of the heating wire only according to the temperature value detected by the temperature detection module in the chamber, it will cause the heating wire to be driven to work with a smaller working power, which may easily lead to a longer process waiting time, thereby affecting the production efficiency of the atomic layer deposition system.

[0080] Based on the above factors, the temperature of the reaction chamber is only slightly lower than the set process temperature, but the temperature of the heating wire has dropped significantly. As an implementation method, the main controller and the heating wire controller in the control system of the reaction chamber temperature provided in the present application specifically perform the following actions based on each temperature detection module to shorten the process waiting time and improve the generation efficiency of the atomic layer deposition system:

[0081] The main controller performs the following actions:

[0082] If the temperature difference between the temperature of the reaction chamber and the lower limit threshold of the chamber operating temperature range is less than or equal to the first temperature difference threshold, a second control instruction is sent to each of the heating wire controllers, and the second control instruction is used to control the corresponding heating wire to operate at a working power lower than the maximum rated power, thereby slowing down the temperature rise rate in the reaction chamber to avoid the influence of excessive temperature on the life of the heating wire.

[0083] In the embodiment of the present application, when the main controller determines that the temperature difference between the temperature of the reaction cavity and the lower limit threshold of the set cavity working temperature range is less than or equal to the first temperature difference threshold, it indicates that the reaction cavity needs to be heated at present, but the heating amplitude should not be too large. At this time, a second control instruction is generated. The function of the second control instruction is to control the heating of the heating wire, but the heating amplitude should not be too large. In the actual process production process, the temperature difference between the reaction cavity temperature and the lower limit threshold of the set cavity working temperature range is less than the first temperature difference threshold. There may be the following two conditions:

[0084] Condition 1: The temperature of the reaction chamber gradually increases from low to high and approaches the lower limit threshold of the set inner chamber operating temperature range. At this time, the temperature inside the reaction chamber is lower than the lower limit threshold, and the heating wire works at the maximum rated power. At this time, if the heating wire continues to work at the maximum rated power, it is easy for the heating wire to be damaged because its own temperature exceeds the maximum tolerance temperature. At this time, the working power of the heating wire needs to be lowered.

[0085] Condition 2: Gas is injected into the reaction chamber or the reaction chamber door is opened, and the reaction chamber temperature changes from high to low. The temperature inside the reaction chamber is lower than the lower limit threshold, but the heating wire does not work at the maximum rated power, and still works at a power lower than the maximum rated power. For example, when the process temperature is 300°C, the corresponding working power of the heating wire is the working power PA corresponding to heating at 300°C (PA<Pmax). At this time, the reaction chamber door is opened, the temperature inside the reaction chamber becomes 295°C, and the surface temperature of the heating wire becomes 290°C.

[0086] For the above conditions 1 and 2, the processing ideas of the control system of the reaction chamber temperature provided in the embodiment of the present application are common, that is, after receiving the second control instruction, each heating wire controller obtains the temperature of the heating wire sent back by the heating wire temperature detection module, and further determines whether the temperature of the heating wire specifically belongs to the above condition 1 or condition 2. Then each heating wire controller performs the following steps:

[0087] receiving the second control instruction, and obtaining the temperature value of the heating wire obtained by the corresponding heating wire temperature detection module;

[0088] According to the temperature value of the heating wire and a preset range conversion algorithm, a corresponding adjusted working power is determined, wherein the adjusted working power is less than the maximum rated working power.

[0089] That is to say, for the above conditions 1 and 2, the difference depends on the temperature of the heating wire. The temperature of the heating wire in condition 1 is higher than that of the heating wire in condition 2. At this time, the corresponding adjusted working power is also different. For condition 1, the working power of the heating wire needs to be adjusted downward from the maximum rated working power, and for condition 2, the working power of the heating wire needs to be adjusted upward from the current working power. However, no matter which adjustment scheme is used, it is necessary to ensure that the adjusted working power is less than the maximum rated working power.

[0090] In the embodiment of the present application, the preset range conversion algorithm characterizes the conversion relationship between the temperature value of each heating wire in the atomic layer deposition system and the working power of the heating wire. As an implementation method, the preset range conversion algorithm is a mathematical conversion relationship obtained by fitting after statistically analyzing the temperature rise and fall of the heating wire in the atomic layer deposition system caused by the working power of different heating wires and the temperature rise and fall in the cavity through multiple historical experiments. As another implementation method, the preset range conversion algorithm is a mathematical model obtained by mathematically modeling the temperature rise and fall changes caused by multiple historical changes in the working power of the heating wire.

[0091] In other words, in the embodiment of the present application, the preset range conversion algorithm is a mapping relationship between "the temperature difference △T of the heating wire and the difference △P of the working power of the heating wire", and the mapping relationship is calculated based on the historical process records or historical experimental records of the atomic layer deposition system. Based on this, in the embodiment of the present application, when the current temperature of the heating wire and the expected heating wire temperature are known, the temperature difference △T that needs to be changed can be known, and then based on the preset range conversion algorithm, the value of the working power difference △P of the heating wire that needs to be adjusted on the basis of the current working power can be inferred when the expected heating wire temperature is reached.

[0092] In this way, each heating wire controller can quickly determine the adjustment power of the heating wire according to the preset range conversion algorithm, based on the temperature of the heating wire currently transmitted back by the heating wire temperature detection module and the required heating wire temperature, and then adjust the working power of the heating wire according to the adjustment power.

[0093] In the embodiment of the present application, the mapping relationship between the temperature change of the heating wire and the temperature change in the cavity (i.e., the mapping relationship between "temperature in the cavity-temperature of the heating wire") can also be calculated based on the historical process records or historical experimental records. In the embodiment of the present application, the mapping relationship between the temperature change of the heating wire and the temperature change in the cavity is called the process temperature range conversion relationship. Mathematical modeling can be performed based on the process temperature range conversion relationship to obtain a process temperature range conversion algorithm. In other words, there is a mapping relationship between the temperature value in the cavity and the temperature value of the heating wire, and the mapping relationship is obtained based on the statistics of historical process record data.

[0094] Specifically, the mapping relationship (or the process temperature range conversion relationship) can be: heating wire temperature value = cavity temperature value * temperature coefficient, the temperature coefficient is calculated based on historical process record data, and the temperature coefficient is a specific value within a temperature coefficient range, and the temperature coefficient range is also determined based on historical process record data. For example, when the cavity temperature value = 300°C, the corresponding heating wire temperature value is not equal to 300°C. If the temperature coefficient range is (1.2~1.4), the heating wire temperature value is approximately between 300°C*1.2~300°C*1.4 (360°C~420°C). As an implementation method, when determining the theoretical heating wire temperature value, each heating wire controller can determine the theoretical heating wire temperature value range corresponding to the theoretical cavity temperature value based on the theoretical cavity temperature value, for example, a cavity temperature of 300°C corresponds to a theoretical heating wire temperature value range of 360°C to 420°C, and then take a temperature value within the theoretical heating wire temperature range as the theoretical heating wire temperature value, for example, taking 380°C as the theoretical heating wire temperature value.

[0095] Then, based on the temperature difference between the actual temperature value and the theoretical temperature value of the heating wire, combined with the preset range conversion algorithm, the working power difference corresponding to the temperature difference is determined, and finally, based on the working power difference, the amplitude of the working power that needs to be adjusted is determined, and finally, the working power of the heating wire is adjusted according to the adjusted working power amplitude.

[0096] Based on this, each heating wire controller is also used to:

[0097] Receive the control instruction sent by the main controller, obtain the cavity temperature PV1 obtained by the cavity temperature detection module and the heating wire temperature PV2 obtained by the heating wire temperature detection module, and determine the corresponding heating wire temperature value PV2' when the target cavity temperature PV1' is reached based on the process temperature range conversion algorithm. Then, based on the heating wire temperature value PV2' and the current heating wire temperature value PV2, determine the temperature difference of the heating wire, and then determine the corresponding heating wire adjustment working power in combination with the preset range conversion algorithm, so as to adjust the temperature of the heating wire based on the adjusted working power.

[0098] In the embodiment of the present application, for the above condition 1, when the temperature in the reaction chamber is low, the heating wire controller can be controlled to work at the maximum rated power until the temperature in the reaction chamber gradually approaches the wafer production process temperature (for example, PV1 gradually approaches the process temperature of 300°C), and then the heating wire is controlled to reduce the working power and work at a working power lower than the maximum rated power, so as to reduce the temperature rise while reducing the damage to the life of the heating wire caused by excessive temperature rise. The use of the embodiment of the present application can shorten the waiting time from the wafer processing to the temperature rising from a low level, which is conducive to ensuring the process efficiency of the atomic layer deposition system.

[0099] As an implementation mode, when the temperature in the reaction chamber gradually approaches the wafer production process temperature, each heating wire can determine the corresponding working power when the temperature of the heating wire can be cooled down through the preset range conversion algorithm.

[0100] For example, if the process temperature is 250°C, the cavity temperature detected by the cavity temperature detection module is 235°C. The heating wire no longer needs to be heated at 600°C, and the heating wire needs to be cooled, that is, the temperature control is gradually reduced, and its temperature can be controlled to be less than the process temperature of 250°C, such as 220°C, and then the corresponding working power of the heating wire at 220°C is calculated as the adjustment power to continue working, and the maximum rated working power is reduced to the adjustment power corresponding to 220°C. The use of the embodiment of the present application can make the cavity temperature value continue to rise, but the heating speed is relatively slow, which can ensure the stable rise of the cavity temperature and protect the service life of the heating wire.

[0101] As an implementation method, each heating wire controller is further used for:

[0102] Obtain the temperature value of the heating wire obtained by the corresponding heating wire temperature detection module, and determine whether the temperature value of the heating wire exceeds the preset heating wire temperature upper limit threshold. If the temperature value of the heating wire exceeds the preset heating wire temperature upper limit threshold, the heating wire is controlled to be powered off; if the temperature value of the heating wire is less than the preset heating wire temperature upper limit threshold, the heating wire is controlled to operate at a working power lower than the maximum rated power.

[0103] Specifically, as an example, if the temperature value of the heating wire is less than the preset upper temperature threshold of the heating wire, the corresponding adjustment power is determined according to the preset range conversion algorithm, and the working power of the heating wire is adjusted according to the adjustment power.

[0104] In summary, in the embodiment of the present application, during the temperature rise process in the reaction chamber, when the temperature in the chamber is lower than the lower limit threshold of the inner chamber working temperature range, especially when the temperature difference is less than the first temperature difference threshold, the heating wire is controlled to work at the maximum rated power until the temperature difference between the temperature of the reaction chamber and the lower limit threshold of the inner chamber working temperature range is equal to the first temperature difference threshold, and then a second control instruction is sent to the heating wire controller, which receives the second control instruction and obtains the actual temperature of the heating wire. The corresponding processing method is determined according to the actual temperature value. If the actual temperature of the heating wire does not exceed the preset upper limit threshold of the heating wire temperature, the corresponding adjustment of the working power can be determined according to the preset range conversion algorithm to reduce the working power of the heating wire. In this way, the chamber temperature can be quickly raised while avoiding the influence of overshoot of the heating wire on the life, thereby overcoming the problem of low process efficiency of the atomic layer deposition system existing in the second disadvantage of the prior art.

[0105] In the embodiment of the present application, for the above condition 2, each heating wire controller determines the corresponding adjusted working power according to the temperature value of the heating wire and the preset range conversion algorithm, specifically:

[0106] According to the second temperature difference between the actual temperature value of the heating wire and the preset theoretical temperature, combined with the preset range conversion algorithm, the theoretical working power corresponding to the temperature increase from the actual temperature value to the preset theoretical temperature is determined as the adjusted working power. The preset theoretical temperature is the temperature difference between the theoretical temperatures of the heating wire corresponding to when the temperature of the reaction chamber meets the preset process temperature.

[0107] For example, if the actual temperature value of the heating wire is 285°C, if you want to ensure that the temperature of the reaction cavity meets the preset process temperature of 300°C, the preset theoretical temperature value of the corresponding heating wire should be 300°C+x, where x is the correction temperature, which can be flexibly set according to the process reaction speed requirements, but it is necessary to ensure that 300°C+x is less than the maximum tolerable temperature value of the heating wire (for example, 650°C). Then, according to the temperature difference between 300°C+x and 285°C, according to the preset range conversion algorithm, calculate the power difference △P of the heating wire from 285°C to 300°C+x, and then adjust the current working power of the heating wire based on the power difference △P, so that its working power increases by △P.

[0108] When the temperature in the chamber drops due to the opening of the chamber door or the injection of air, the embodiment of the present application can be used to quickly calculate the required temperature increase amplitude and the working power amplitude corresponding to the temperature increase amplitude based on the temperature difference between the actual temperature of the heating wire and the theoretical temperature of the heating wire corresponding to the desired chamber temperature, without waiting for the chamber door to be closed or the injection of air to stop, and then increase the working power of the heating wire according to the calculated working power amplitude. This further saves the process waiting time and is conducive to ensuring the process efficiency of atomic layer deposition.

[0109] The above is an explanation for the case where the temperature of the reaction cavity is less than the lower limit threshold of the set cavity operating temperature range, and the following is an explanation for the case where the temperature of the reaction cavity is greater than the upper limit threshold of the set cavity operating temperature range. In some embodiments, the main controller is further used to:

[0110] If the temperature of the reaction cavity is greater than the upper limit threshold of the cavity working temperature range, and the temperature difference between the temperature and the upper limit threshold of the cavity working temperature range is less than the second temperature difference threshold, a third control instruction is sent to each heating wire controller respectively, and the third control instruction is used to control the corresponding heating wire to operate at a working power corresponding to a preset low temperature value lower than that.

[0111] Based on this, in some embodiments, each heating wire controller is also used to:

[0112] Receive the third control instruction, obtain the temperature value of the heating wire obtained by the corresponding heating wire temperature detection module, and determine the temperature difference between the temperature value of the heating wire and the preset low temperature value;

[0113] According to the temperature difference between the temperature value of the heating wire and the preset low temperature value, the corresponding adjustment power is determined according to the preset range conversion algorithm.

[0114] This situation can be specifically understood as the temperature rise in the cavity exceeding the upper limit of the working temperature range of the cavity, but not exceeding it by too much. At this time, it is necessary to control the heating wire to cool down quickly rather than directly cut off the working power of the heating wire. This can not only avoid the damage to the life of the heating wire caused by frequent disconnection of the heating wire, but also reduce the waiting time for the heating wire to restart.

[0115] Specifically, the preset low temperature value can be set according to the process temperature of the wafer, but it is necessary to ensure that the preset low temperature value is less than the process temperature value of the wafer. For example, if the process temperature of the wafer is 300°C, the preset low temperature value can be 300°C-y, and the value of y can be set according to the required cooling speed. The larger the value of y, the larger the corresponding cooling amplitude. Further, the temperature difference between the current heating wire and the preset low temperature value is determined, and then the power difference corresponding to the temperature difference is calculated according to the preset range conversion algorithm, and then the adjustment power of the current heating wire is adjusted based on the power difference, and the working power of the heating wire is lowered according to the adjustment power.

[0116] In addition, in some embodiments, the main controller is also used to:

[0117] If the temperature difference between the temperature of the reaction inner cavity and the upper threshold of the inner cavity working temperature range is greater than a second temperature difference threshold, sending a fourth control instruction to each of the heating wire controllers respectively;

[0118] Each of the heating wire controllers is also used to obtain the temperature value of the heating wire obtained by the corresponding heating wire temperature detection module based on receiving the fourth control instruction. If the temperature value of the heating wire is greater than the preset heating wire temperature upper limit threshold, the corresponding heating wire is controlled to be powered off.

[0119] In an embodiment of the present application, the preset upper temperature threshold of the heating wire can be set based on the maximum tolerable temperature value of the heating wire, and the preset upper temperature threshold of the heating wire should be less than the maximum tolerable temperature value of the heating wire, wherein the maximum tolerable temperature value of the heating wire can be determined according to the model and material of the heating wire. Exemplarily, if the maximum tolerable temperature value of the heating wire is 650°C, the preset upper temperature threshold of the heating wire is 650°C-10°C=640°C. If the temperature value of the heating wire is greater than 640°C, each heating wire controller can directly control the corresponding heating wire to cut off the power to avoid overheating and burning of the heating wire, thereby protecting the life of the heating wire.

[0120] In the embodiments of the present application, the operating power can be adjusted by existing means of adjusting the operating power of the circuit, and the present application does not make strict limitations.

[0121] In a second aspect, the present application provides a method for controlling the temperature of a reaction chamber, which can be applied to the reaction chamber temperature control system provided in the first aspect, and can also be applied to any electronic device with a reaction chamber temperature control function, including but not limited to a personal mobile terminal, a computer or a server. As a preferred embodiment, the method for controlling the temperature of a reaction chamber is applied to a reaction control device of a reaction chamber, and the reaction control device is pre-installed with the host computer mentioned in the first aspect. Figure 4 As shown, the method comprises the following steps:

[0122] S41, acquiring the temperature of the reaction cavity of the atomic layer deposition system detected by the cavity temperature detection module, and comparing the temperature of the reaction cavity with a set cavity operating temperature range;

[0123] S42, determining the adjusted working power of each heating wire according to the comparison results between the reaction cavity temperature and the cavity working temperature range and the temperature of each heating wire obtained by each heating wire temperature detection module;

[0124] S43, adjusting the working power of the corresponding heating wire according to the adjusted working power.

[0125] As an example, if the atomic deposition system is Figure 3 The system shown, which contains only two heating wires, can be combined with Figure 5 The processing flow shown is used to understand the control system and method of the reaction chamber temperature provided in the embodiment of the present application:

[0126] The host computer sets the process temperature SP, based on which an operating temperature range can be determined. Figure 5 In the processing flow shown, the upper and lower thresholds of the working temperature range are equal, and only the process temperature SP is compared at this time. The main controller then obtains the actual temperature PV1 in the cavity, and compares the actual temperature with the set process temperature SP. If |SP-PV|>0, it means that the actual temperature is not yet equal to the process temperature, and it is further necessary to judge the situation where the actual temperature is different from the process temperature. In this process, if the temperature of the upper and lower heating wires is greater than the maximum tolerable temperature value of the heating wire, the heating wire is directly cut off, and an alarm signal is output to remind the operator that the heating wire has been cut off, which is convenient for the operator to maintain. Specifically, the temperature of either the upper heating wire or the lower heating wire may be greater than the maximum operating temperature and greater than the maximum tolerable temperature value.

[0127] If the temperature of the upper heating wire and the temperature of the lower heating wire are both lower than the maximum tolerance temperature, it is necessary to further determine whether the difference between the actual temperature in the cavity and the set process temperature is within 15°C. If SP-PV1≥15°C, it means that the temperature is too low, and the actual temperature of the heating wire needs to be further determined. If PV1-SP≥15°C, it is necessary not only to determine the actual temperature of the heating wire, but also to further determine whether the temperature of the heating wire is the maximum operating temperature, such as 600°C. Then, according to the preset range conversion algorithm, the actual temperature PV2 of the upper heating wire and the actual temperature PV3 of the lower heating wire are obtained.

[0128] Further judge the relationship between the theoretical temperature SP2 of the upper heating wire and the actual temperature PV2, as well as the relationship between the theoretical temperature SP3 of the lower heating wire and the actual temperature PV3, further determine the temperature difference, and then calculate the adjustment power corresponding to the temperature difference according to the preset range conversion algorithm, and adjust the power of the upper heating wire and the power of the lower heating wire according to the determined adjustment power, and obtain the actual temperature PV1 in the cavity again.

[0129] A control system for the reaction chamber temperature provided in the embodiment of the present application is selected. A heating wire temperature detection module and its corresponding heating wire controller are added on the basis of the intra-cavity temperature detection module and the main controller. The main controller generates corresponding control instructions to each heating wire controller according to the temperature detection result of the intra-cavity temperature detection module. Then, each heating wire controller determines a specific heating wire temperature adjustment scheme (essentially a heating wire power adjustment scheme) based on the received control instructions and the temperature value of the heating wire detected in real time by each heating wire temperature detection module to obtain the corresponding adjustment power. Then, the working power of the heating wire is adjusted based on the adjustment power, thereby reducing the influence of overshoot on the life of the heating wire, reducing the process waiting time, and improving the process efficiency of wafer processing.

[0130] The names of the messages or information exchanged between multiple devices in the embodiments of the present application are only used for illustrative purposes and are not used to limit the scope of these messages or information.

[0131] In a third aspect, the exemplary embodiments of the present application further provide an electronic device, comprising: at least one processor; and a memory connected to the at least one processor in communication. The memory stores a computer program that can be executed by the at least one processor, and the computer program is used to enable the electronic device to perform a method according to an embodiment of the present application when executed by the at least one processor.

[0132] The exemplary embodiment of the present application further provides a non-transitory computer-readable storage medium storing a computer program, wherein the computer program, when executed by a processor of a computer, is used to cause the computer to perform a method according to an embodiment of the present application.

[0133] The exemplary embodiments of the present application further provide a computer program product, including a computer program, wherein when the computer program is executed by a processor of a computer, it is used to enable the computer to execute the method according to the embodiment of the present application.

[0134] refer to Figure 6, the structural block diagram of the electronic device 600 that can be used as the server or client of the present application will now be described, which is an example of a hardware device that can be applied to various aspects of the present application. The electronic device is intended to represent various forms of digital electronic computer equipment, such as laptop computers, desktop computers, workbenches, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices and other similar computing devices. The components shown herein, their connections and relationships, and their functions are only examples, and are not intended to limit the implementation of the present application described and / or required herein.

[0135] like Figure 6 As shown, the electronic device 600 includes a computing unit 601, which can perform various appropriate actions and processes according to a computer program stored in a read-only memory (ROM) 602 or a computer program loaded from a storage unit 608 into a random access memory (RAM) 603. In the RAM 603, various programs and data required for the operation of the electronic device 600 can also be stored. The computing unit 601, the ROM 602, and the RAM 603 are connected to each other via a bus 604. An input / output (I / O) interface 605 is also connected to the bus 604.

[0136] A plurality of components in the electronic device 600 are connected to the I / O interface 605, including: an input unit 606, an output unit 607, a storage unit 608, and a communication unit 609. The input unit 606 may be any type of device capable of inputting information to the electronic device 600, and the input unit 606 may receive input digital or character information, and generate key signal inputs related to user settings and / or function control of the electronic device. The output unit 607 may be any type of device capable of presenting information, and may include, but is not limited to, a display, a speaker, a video / audio output terminal, a vibrator, and / or a printer. The storage unit 608 may include, but is not limited to, a disk, an optical disk. The communication unit 609 allows the electronic device 600 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks, and may include, but is not limited to, a modem, a network card, an infrared communication device, a wireless communication transceiver, and / or a chipset, such as a Bluetooth™ device, a WiFi device, a WiMax device, a cellular communication device, and / or the like.

[0137] The computing unit 601 may be a variety of general and / or special processing components with processing and computing capabilities. Some examples of the computing unit 601 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, digital signal processors (DSPs), and any appropriate processors, controllers, microcontrollers, etc. The computing unit 601 performs the various methods and processes described above. For example, in some embodiments, the aforementioned reaction chamber temperature control method may be implemented as a computer software program, which is tangibly contained in a machine-readable medium, such as a storage unit 608. In some embodiments, part or all of the computer program may be loaded and / or installed on the electronic device 600 via the ROM 602 and / or the communication unit 609. In some embodiments, the computing unit 601 may be configured to perform the aforementioned reaction chamber temperature control method in any other appropriate manner (e.g., by means of firmware).

[0138] The program code for implementing the method of the present application can be written in any combination of one or more programming languages. These program codes can be provided to a processor or controller of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that the program code, when executed by the processor or controller, implements the functions / operations specified in the flow chart and / or block diagram. The program code can be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0139] In the context of the present application, a machine-readable medium may be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, device, or equipment. A machine-readable medium may be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or device, or any suitable combination of the foregoing. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0140] As used herein, the terms "machine-readable medium" and "computer-readable medium" refer to any computer program product, apparatus, and / or device (e.g., disk, optical disk, memory, programmable logic device (PLD)) for providing machine instructions and / or data to a programmable processor, including a machine-readable medium that receives machine instructions as a machine-readable signal. The term "machine-readable signal" refers to any signal for providing machine instructions and / or data to a programmable processor.

[0141] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user can provide input to the computer. Other types of devices can also be used to provide interaction with the user; for example, the feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic input, voice input, or tactile input).

[0142] The systems and techniques described herein may be implemented in a computing system that includes back-end components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes front-end components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such back-end components, middleware components, or front-end components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), and the Internet.

[0143] A computer system may include clients and servers. Clients and servers are generally remote from each other and usually interact through a communication network. The relationship of client and server is generated by computer programs running on respective computers and having a client-server relationship to each other.

Claims

1. A reaction chamber temperature control system, characterized in that: The control system comprises: an intracavity temperature detection module, a plurality of heating wire temperature detection modules, and a host computer; the host computer comprises: a main controller, and a plurality of heating wire controllers; wherein each of the heating wire temperature detection modules is used to detect the temperature of the corresponding heating wire, and each of the heating wire controllers is used to control the working power of the corresponding heating wire; wherein: The main controller is used to obtain the temperature of the reaction chamber of the atomic layer deposition system detected by the chamber temperature detection module, and compare the temperature of the reaction chamber with a set chamber operating temperature range, and send different control instructions to each of the heating wire controllers according to different comparison results between the reaction chamber temperature and the chamber operating temperature range; Each of the heating wire controllers is used for: receiving the control instruction, and acquiring the temperature of the reaction cavity and the temperature of the heating wire acquired by the heating wire temperature detection module; Based on the process temperature range conversion algorithm, the target temperature value of the corresponding heating wire is determined when the target cavity temperature is reached; Determining the temperature difference of the heating wire based on the target temperature value of the heating wire and the current temperature value of the heating wire; According to the temperature difference of the heating wires combined with a preset range conversion algorithm, the adjusted working power of the corresponding heating wires is determined, and the working power of the corresponding heating wires is adjusted according to the adjusted working power; Among them, the process temperature range conversion algorithm represents the mapping relationship between the temperature change of the heating wire and the temperature change of the reaction cavity, and the preset range conversion algorithm represents the conversion relationship between the rising and falling temperature values ​​of each heating wire in the atomic layer deposition system and the working power of the heating wire.

2. The control system according to claim 1, characterized in that: The main controller is further used for: If the temperature of the reaction inner cavity is lower than the lower limit threshold of the inner cavity working temperature range, and the temperature difference between the temperature of the reaction inner cavity and the lower limit threshold of the inner cavity working temperature range is greater than a first temperature difference threshold, a first control instruction is sent to each of the heating wire controllers, wherein the first control instruction is used to control the corresponding heating wire to work at the maximum rated power; Each of the heating wire controllers is also used to receive the first control instruction and determine the maximum rated operating power of the corresponding heating wire as the adjusted operating power, so that the corresponding heating wire operates at the maximum rated operating power until the temperature difference between the temperature of the reaction cavity and the lower limit threshold of the cavity operating temperature range is equal to the first temperature difference threshold.

3. The control system according to claim 2, characterized in that: The main controller is further used for: If the temperature difference between the temperature of the reaction cavity and the lower limit threshold of the cavity operating temperature range is less than or equal to the first temperature difference threshold, a second control instruction is sent to each heating wire controller respectively, and the second control instruction is used to control the corresponding heating wire to operate at an operating power lower than the maximum rated power.

4. The control system according to claim 3, characterized in that: Each of the heating wire controllers is also used for: receiving the second control instruction, and obtaining the temperature value of the heating wire obtained by the corresponding heating wire temperature detection module; According to the temperature value of the heating wire and a preset range conversion algorithm, a corresponding adjusted working power is determined, wherein the adjusted working power is less than the maximum rated working power.

5. The control system according to claim 1, characterized in that: The main controller is further used for: If the temperature of the reaction cavity is greater than the upper limit threshold of the cavity working temperature range, and the temperature difference between the temperature and the upper limit threshold of the cavity working temperature range is less than the second temperature difference threshold, a third control instruction is sent to each heating wire controller respectively, and the third control instruction is used to control the corresponding heating wire to operate at a working power corresponding to a preset low temperature value lower than that.

6. The control system according to claim 5, characterized in that: Each of the heating wire controllers is also used for: Receive the third control instruction, obtain the temperature value of the heating wire obtained by the corresponding heating wire temperature detection module, and determine the temperature difference between the temperature value of the heating wire and the maximum tolerable temperature value; According to the temperature difference between the temperature value of the heating wire and the maximum tolerable temperature value, the corresponding adjustment power is determined according to a preset range conversion algorithm.

7. The control system according to claim 5, characterized in that: The main controller is further used for: If the temperature difference between the temperature of the reaction cavity and the upper threshold of the cavity working temperature range is greater than a second temperature difference threshold, sending a fourth control instruction to each of the heating wire controllers respectively; Each of the heating wire controllers is also used to obtain the temperature value of the heating wire obtained by the corresponding heating wire temperature detection module based on receiving the fourth control instruction. If the temperature value of the heating wire is greater than the preset heating wire temperature upper limit threshold, the corresponding heating wire is controlled to be powered off.

8. A method for controlling the temperature of a reaction chamber, characterized in that: The method is applied to the control system of the reaction chamber temperature as claimed in any one of claims 1 to 7, and the method comprises: Acquire the temperature of the reaction chamber of the atomic layer deposition system detected by the chamber temperature detection module, and compare the temperature of the reaction chamber with a set chamber operating temperature range; According to the different comparison results between the reaction cavity temperature and the cavity working temperature range, combined with the temperature of each heating wire obtained by each heating wire temperature detection module, the adjusted working power of each heating wire is determined; According to the adjustment of the working power, the working power of the corresponding heating wire is adjusted; Wherein, the adjusting working power of each heating wire is determined according to the different comparison results between the reaction cavity temperature and the cavity working temperature range, in combination with the temperature of each heating wire obtained by each heating wire temperature detection module; and the working power of the corresponding heating wire is adjusted according to the adjusted working power, including: Acquiring the temperature of the reaction cavity and the temperature of the heating wire acquired by the heating wire temperature detection module; Based on the process temperature range conversion algorithm, the target temperature value of the corresponding heating wire is determined when the target cavity temperature is reached; Determining the temperature difference of the heating wire based on the target temperature value of the heating wire and the current temperature value of the heating wire; According to the temperature difference of the heating wires combined with a preset range conversion algorithm, the adjusted working power of the corresponding heating wires is determined, and the working power of the corresponding heating wires is adjusted according to the adjusted working power; Among them, the process temperature range conversion algorithm represents the mapping relationship between the temperature change of the heating wire and the temperature change of the reaction cavity, and the preset range conversion algorithm represents the conversion relationship between the rising and falling temperature values ​​of each heating wire in the atomic layer deposition system and the working power of the heating wire.

9. An electronic device, characterized in that: The electronic device comprises: Processor; and Memory for storing programs, The program includes instructions, which, when executed by the processor, cause the processor to perform the method according to claim 8.

10. A non-transitory computer-readable storage medium storing computer instructions, characterized in that: The computer instructions are used to make a computer execute the method according to claim 8.

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