Wafer plasma surface activation equipment and activation method

Abstract

The present invention relates to a wafer plasma surface activation device and activation method, belonging to the technical field of equipment for processing semiconductor components. The present invention effectively excites gas molecules within a chamber through a strong magnetic field generated by an ICP coil, forming a high-density, highly active plasma. The ICP reactor is disposed above the activation chamber, and the activation chamber and the ICP reactor are separated by an insulating ceramic isolation plate. ICP electromagnetic induction can penetrate the isolation plate, which not only ensures the airtightness of the activation chamber but also effectively isolates the high-temperature environment of the ICP reactor, preventing the high temperature inside the ICP reactor from adversely affecting the activation chamber. The ICP coil is disposed between an inner cylinder and an outer cylinder, a cooling fan is provided on the outer cylinder, and a heat dissipation coil is provided within the activation chamber, thereby improving the heat dissipation effect and effectively reducing the temperature within the activation chamber.

Description

Technical Field

[0001] The invention relates to a wafer plasma surface activation device and an activation method, belonging to the technical field of equipment for processing semiconductor components. Background Art

[0002] As an advanced surface treatment technology, plasma technology has demonstrated tremendous potential in materials science and semiconductor manufacturing. Plasma surface activation can refine surface roughness, significantly increase surface energy, effectively introduce functional groups, and alter surface chemical composition, thereby enhancing surface properties and optimizing surface functionality.

[0003] In the wafer manufacturing process, plasma surface activation treatment is particularly important. It plays an irreplaceable role in improving wafer bonding quality and enhancing device performance. However, most existing wafer plasma activation equipment uses capacitively coupled plasma (CCP) technology to generate plasma. Although CCP technology has a certain effect in achieving wafer surface activation, it also has some significant disadvantages: during operation, CCP technology generates a large amount of heat energy due to the strong effect of the high-frequency electric field on gas molecules. This not only causes the internal temperature of the equipment to rise, increasing the burden on the heat dissipation system, but also may cause thermal stress to the wafer, thereby affecting the stability of the process and the quality of the wafer. In addition, the plasma density generated by CCP technology is relatively low. The low plasma density means that under the same conditions, the number of active particles received by the wafer surface is limited, which cannot fully meet the needs of certain high-precision or high-demand processes.

[0004] It should be noted that the above information disclosed in this Background section is only for understanding the background of the present inventive concept and therefore it may contain information that does not constitute the prior art. Summary of the Invention

[0005] The purpose of the present invention is to provide a new technical solution to improve or solve the technical problems existing in the prior art as described above.

[0006] The technical solution provided by the present invention is as follows: a wafer plasma surface activation device, comprising a radio frequency power supply module, an ICP reactor, a reactor cover, an isolation plate, an activation chamber, a vacuum system and a gas pumping pipeline;

[0007] The ICP reactor includes an ICP coil, an inner cylinder, and an outer cylinder. The outer cylinder is sleeved on the outer side of the inner cylinder to form an outer cavity between the outer cylinder and the inner cylinder. The ICP coil is spirally installed in the outer cavity and is electrically connected to the RF power module. A plurality of evenly distributed cooling fans are provided on the wall of the outer cylinder.

[0008] The reactor cover is installed above the ICP reactor in an openable and closable manner, and the isolation plate is located between the activation chamber and the ICP reactor;

[0009] A wafer entrance is provided on the side wall of the activation chamber, and a wafer carrier, a wafer lifting pin and a cooling coil are provided in the activation chamber. The wafer carrier is fixed in the activation chamber, the cooling coil is arranged below the wafer carrier, a through hole is provided on the wafer carrier, and the wafer lifting pin is installed in the through hole in a manner that it can be raised and lowered;

[0010] An exhaust port is provided at the bottom of the activation chamber, and the vacuum system is connected to the activation chamber through the exhaust port; an air inlet is provided at the top of the activation chamber, and the gas pumping pipeline is connected to the activation chamber through the air inlet, and the exhaust port and the air inlet are both located on the center line of the activation chamber.

[0011] Compared with the prior art, the technical solution provided by the present invention has the following beneficial effects: the present invention adopts inductively coupled plasma etching (ICP) technology, and the strong magnetic field generated by the ICP coil effectively excites the gas molecules in the chamber to form a high-density, highly active plasma; the ICP reactor is arranged on the upper side of the activation chamber, and the activation chamber and the ICP reactor are isolated by an isolation plate, and the ICP electromagnetic induction can penetrate the isolation plate. The isolation plate not only ensures the airtightness of the activation chamber, but also effectively isolates the high-temperature environment of the ICP reactor, preventing the high temperature inside the ICP reactor from adversely affecting the activation chamber; the ICP coil is arranged between the inner cylinder and the outer cylinder, and a cooling fan is arranged on the outer cylinder, and a cooling coil is also arranged in the activation chamber, thereby improving the heat dissipation effect, thereby effectively reducing the temperature in the activation chamber; the present invention also arranges the exhaust port and the air inlet on the center line of the activation chamber, ensuring the uniform distribution of the airflow in the activation chamber, further improving the uniformity of the wafer surface etching. The present invention improves wafer plasma surface activation equipment, optimizes the plasma generation mechanism, increases the density and activity of the plasma, and reduces heat generation during equipment operation, thereby ensuring the wafer surface activation effect while improving the quality and stability of wafer bonding.

[0012] On the basis of the above technical solution, the present invention can also be improved as follows.

[0013] Furthermore, it also includes an upper cover opening and closing mechanism, which includes a flip arm, a worm gear mechanism, a rotating shaft and a motor, the flip arm is connected to the rotating shaft, the motor shaft of the motor is connected to the worm of the worm gear mechanism, the turbine of the worm gear mechanism is installed on the rotating shaft, the motor drives the rotating shaft to rotate through the worm gear mechanism, thereby driving the flip arm to flip, the RF power supply module and the reactor upper cover are both installed on the flip arm, the flip arm can drive the reactor upper cover to open or close the ICP reactor, and the RF power supply module moves during the opening and closing process to keep the electrical connection continuous.

[0014] The beneficial effect of adopting this further solution is that when the ICP reactor needs to be inspected, cleaned, or parts replaced, the reactor cover can be easily opened by simply controlling the motor to drive the flip arm to flip, eliminating the need for direct manual operation, saving time and improving safety. Furthermore, the RF power module is mounted on the flip arm, and its weight is supported by the flip arm. During opening and closing, the RF power module moves synchronously with the flip arm, while maintaining a continuous electrical connection. This rationalizes the device's structural design and improves space utilization.

[0015] Furthermore, the ICP coil includes a starting end, an intermediate terminal and an end. The starting end of the ICP coil is connected to the ground wire, the intermediate terminal of the ICP coil is electrically connected to the RF power module, and the end of the ICP coil is not directly connected to the RF power module or the ground wire. The coil from the intermediate terminal to the end is an unconnected coil.

[0016] The beneficial effect of adopting the above further solution is that this wiring method has a better plasma generation density and lower plasma damage, thereby achieving more uniform and efficient activation treatment of the wafer surface.

[0017] Furthermore, it also includes a gate and a lifting cylinder, and the lifting cylinder drives the gate to open and close at the wafer entrance.

[0018] The beneficial effect of adopting the above further solution is that the automatic opening and closing of the gate can quickly respond to the needs of wafer entry and exit, reduce manual operation time, and improve the continuity and efficiency of wafer processing.

[0019] Furthermore, the inner cylinder is a cylinder with a central cavity, the outer cylinder is a polygonal cylinder, the polygonal cylinder is provided with heat dissipation holes, and the heat dissipation fan is embedded in the plane cylinder wall of the polygonal cylinder.

[0020] The beneficial effect of adopting the above-mentioned further scheme is that the cooling fan is embedded in the plane wall of the polygonal tube, making the installation of the cooling fan more stable. In addition, the plane wall design of the polygonal tube enables the airflow blown out by the cooling fan to be evenly distributed along multiple directions of the tube body, avoiding the problems of local overheating or poor airflow.

[0021] Furthermore, it also includes a lifting pin lifting mechanism, which is fixed to the bottom of the activation chamber through a bracket. The lifting pin lifting mechanism includes a driving cylinder, a coupling, a screw, a movable seat, a support rod and a supporting ring. The driving shaft of the driving cylinder is connected to the screw through a coupling. The movable seat is threadedly connected to the screw and can move axially. The lower end of the support rod is fixed on the movable seat, and the supporting ring is installed on the upper end of the support rod. Multiple wafer lifting pins are evenly distributed on the supporting ring.

[0022] The beneficial effect of adopting the above further solution is that by precisely controlling the stroke and speed of the driving cylinder, the stability and accuracy of the wafer lifting pin during the lifting process can be ensured, thereby ensuring the precise positioning of the wafer in the activation chamber.

[0023] Furthermore, a plurality of support plates are evenly distributed in the circumferential direction of the outer cavity between the inner cylinder and the outer cylinder, and the ICP coil is installed in the outer cavity through the support plates.

[0024] The beneficial effect of adopting the above-mentioned further solution is that the provision of the support plate not only enhances the structural stability of the outer cavity, but also provides a stable mounting platform for the ICP coil. First, because the ICP coil generates certain electromagnetic forces and thermal stresses during operation, without sufficient support, the outer cavity may be at risk of deformation or damage. The uniform distribution of the support plate can effectively disperse these forces, protecting the integrity of the outer cavity and ensuring the long-term stable operation of the equipment. Second, by installing the ICP coil on the support plate, the coil position can be accurately and fixed, avoiding the problem of uneven electromagnetic field distribution or performance degradation caused by coil position deviation or loosening.

[0025] Another technical solution provided by the present invention is as follows: a wafer plasma surface activation method, using the wafer plasma surface activation equipment, comprising the following steps:

[0026] S1. The gate at the wafer entrance opens and the robot sends the wafer into the activation chamber.

[0027] S2, the wafer lifting pin rises to hold up the wafer, and the robot withdraws;

[0028] S3, the wafer lifting pin descends, the wafer falls onto the wafer stage, and the wafer entrance gate closes;

[0029] S4, starting the vacuum system to vacuum the activation chamber. When the vacuum reaches a set value, a predetermined reaction gas is introduced into the activation chamber through a gas pumping line;

[0030] S5. After the required gas environment and vacuum level are reached in the chamber, the RF power supply is connected to generate a magnetic field through the ICP coil, which excites the gas molecules in the chamber into a plasma state and begins to activate the wafer surface.

[0031] S6. When the wafer surface activation treatment is completed, the vacuum system is stopped and the gate at the wafer entrance is opened to prepare for unloading the treated wafers.

[0032] S7: The wafer lift pin rises again to lift the processed wafer to a predetermined position above the wafer stage for the robot to take away.

[0033] S8, the robot enters the chamber and stops at a predetermined wafer removal position;

[0034] S9, the wafer lifting pin descends and the wafer falls onto the robot arm;

[0035] S10. The robot drags the wafer out of the activation chamber and enters the next process.

[0036] The technical solution provided by the present invention has the following beneficial effects compared with the prior art: the present invention effectively excites the gas molecules in the chamber through the strong magnetic field generated by the ICP coil, forming a high-density, highly active plasma, which can interact more fully with the wafer surface and improve the activation effect. Before wafer processing, the precise control of the vacuum system and the gas pumping pipeline ensures that the required gas environment and vacuum degree are achieved in the activation chamber. The entire processing process is highly automated, and all the processes from wafer feeding, lifting, processing to removal are completed by automated equipment such as robots and lifting pin lifting mechanisms, which not only improves production efficiency, but also reduces errors and safety hazards caused by human operation. The activation effect of the wafer surface treated by the method of the present invention is significantly improved. This highly activated surface is more conducive to the subsequent wafer bonding process, can significantly enhance the bonding strength of the bonding interface, reduce defects and falling off, and thus improve the overall quality and stability of wafer bonding.

[0037] Furthermore, in step S4 , the vacuum level in the activation chamber reaches 50 mTorr, and then a predetermined reaction gas is introduced into the activation chamber.

[0038] The beneficial effect of adopting the above further solution is that the vacuum degree of 50 mTorr can reduce energy consumption and vacuum pumping time while ensuring the plasma quality.

[0039] Furthermore, in step S5, the frequency output by the radio frequency power supply is adjusted to 13.56 MHz through the radio frequency matching device.

[0040] The beneficial effect of adopting the above further scheme is that the electromagnetic waves at this frequency can effectively penetrate the gas and excite the molecules or atoms therein to form plasma. By adjusting the RF power output to this frequency, the plasma generation efficiency and stability can be optimized. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are merely embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0042] Figure 1 It is a schematic structural diagram of the wafer plasma surface activation equipment of the present invention;

[0043] Figure 2 A schematic diagram of the structure of the wafer plasma surface activation equipment of the present invention from a bottom-up perspective;

[0044] Figure 3 A cross-sectional view of the interior of an activation chamber of a wafer plasma surface activation device according to the present invention;

[0045] Figure 4 Schematic diagram of the structure of the interior of the activation chamber of the present invention;

[0046] Figure 5 Schematic diagram of the structure of the I CP reactor of the present invention;

[0047] Figure 6 It is a schematic structural diagram of the lift pin lifting mechanism of the present invention;

[0048] Figure 7 This is a front view of the lift pin lifting mechanism and the wafer carrier of the present invention;

[0049] Figure 8 Layout diagram of the air extraction port and the air inlet in the activation chamber of the present invention;

[0050] Figure 9 This is a schematic diagram of the structure of the ICP coil connection of the present invention;

[0051] Figure 10 is a graph showing ion density and power in the activation chamber of the present invention;

[0052] Figure 11 is a graph of electron temperature and power according to the present invention;

[0053] In the figure, 100, RF power module;

[0054] 200, ICP reactor; 210, ICP coil; 220, inner cylinder; 230, outer cylinder; 240, cooling fan; 250, support plate;

[0055] 300, reactor cover; 400, isolation plate;

[0056] 500, activation chamber; 510, wafer stage; 520, wafer lift pin; 530, cooling coil; 540, wafer inlet; 550, exhaust port; 560, air inlet;

[0057] 600, ejector pin lifting mechanism; 610, drive cylinder; 620, movable seat; 630, support rod; 640, support ring;

[0058] 700, upper cover opening and closing mechanism; 710, flip arm; 720, worm gear mechanism; 730, rotating shaft; 740, motor;

[0059] 810, gate; 820, lifting cylinder;

[0060] 910. Vacuum system; 920. Gas pumping pipeline. DETAILED DESCRIPTION

[0061] The serial numbers assigned to components herein, such as "first" and "second," are used solely to distinguish the objects being described and do not imply any sequential priority or specific technical meaning. Furthermore, unless otherwise specified, the concepts of "connection" and "coupling" mentioned in this application are considered to include both direct and indirect connections (couplings).

[0062] When interpreting the description of this application, it is important to clarify that the directions or positional relationships indicated by terms such as "upper," "lower," "front," "back," "left," "right," "vertical," "horizontal," "top," "bottom," "inside," "outside," "clockwise," and "counterclockwise" are based on the perspectives and layouts shown in the accompanying drawings and are intended to facilitate explanation and simplify the description process. They are not intended to be absolute limitations on the actual directions, constructions, and operating modes of the devices or components described. Therefore, these terms should not be construed as restrictive of the content of this application.

[0063] The principles and features of the present invention are described below with reference to examples. The examples are only used to explain the present invention and are not used to limit the scope of the present invention.

[0064] like Figure 1 - Figure 7As shown, a wafer plasma surface activation device includes a radio frequency power module 100, an ICP reactor 200, a reactor cover 300, an isolation plate 400, an activation chamber 500, a vacuum system 910 and a gas pumping line 920. The ICP reactor 200 includes an ICP coil 210, an inner cylinder 220 and an outer cylinder 230. The outer cylinder 230 is sleeved on the outer side of the inner cylinder 220 to form an outer cavity between the outer cylinder 230 and the inner cylinder 220. The ICP coil 210 is spirally installed in the outer cavity and is electrically connected to the radio frequency power module 100. A plurality of evenly distributed cooling fans 240 are provided on the wall of the outer cylinder 230. The reactor cover 300 is installed above the ICP reactor 200 in an openable and closable manner to open or close the ICP reactor 200. The CP reactor 200 is located on the upper side of the activation chamber 500, and the isolation plate 400 is located between the activation chamber 500 and the ICP reactor 200. The isolation plate 400 not only provides a sealed space for the activation chamber 500, but also acts as a heat insulator to prevent the high temperature inside the ICP reactor 200 from adversely affecting the activation chamber 500. In this embodiment, the isolation plate 400 is a ceramic isolation plate. The ceramic isolation plate not only has insulating properties, but also ICP electromagnetic induction can penetrate the ceramic isolation plate. Therefore, even with the presence of the ceramic isolation plate, the ICP The CP system can still operate effectively, achieving full compatibility and interference-free transmission of electromagnetic induction signals; a wafer entrance 540 is provided on the side wall of the activation chamber 500, and a wafer carrier 510, a wafer lifting pin 520 and a cooling coil 530 are provided in the activation chamber 500. The wafer carrier 510 is fixed in the activation chamber 500, and the cooling coil 530 is provided below the wafer carrier 510 for controlling the temperature of the wafer during the processing. A through hole is provided on the wafer carrier 510, and the wafer lifting pin 520 The activation chamber 500 is installed in the through hole in a manner that allows it to be lifted; the bottom of the activation chamber 500 is provided with an air extraction port 550, and the vacuum pumping system 910 is connected to the activation chamber 500 through the air extraction port 550 to achieve vacuum extraction; the top of the activation chamber 500 is provided with an air inlet 560, and the gas pumping pipeline 920 is connected to the activation chamber 500 through the air inlet 560 to provide the required gas environment for the processing process, and the air extraction port 550 and the air inlet 560 are both located on the center line of the activation chamber 500 (refer to Figure 8 ), which can optimize the airflow distribution and improve the uniformity and efficiency of plasma surface treatment.

[0065] The wafer plasma surface activation equipment also includes an upper cover opening and closing mechanism 700, a gate 810 and a lifting cylinder 820. The upper cover opening and closing mechanism 700 includes a flip arm 710, a worm gear mechanism 720, a rotating shaft 730 and a motor 740. The flip arm 710 is connected to the rotating shaft 730. The motor 740 shaft of the motor 740 is connected to the worm of the worm gear mechanism 720. The turbine of the worm gear mechanism 720 is installed on the rotating shaft 730. The motor 740 drives the rotating shaft 730 to rotate through the worm gear mechanism 720, thereby driving the flip arm 710 to flip. The RF power supply module 100 and the reactor upper cover 300 are both installed on the flip arm 710. The flip arm 710 can drive the reactor upper cover 300 to open or close the I The CP reactor 200 and the RF power module 100 follow the movement during the opening and closing process, ensuring that the RF power maintains a stable electrical connection with the induction coil during the opening or closing process of the reactor cover 300.

[0066] like Figure 9 As shown, the ICP coil 210 includes a starting end, an intermediate terminal, and an end. The starting end of the ICP coil 210 is connected to the ground wire, the intermediate terminal of the ICP coil 210 is electrically connected to the RF power module 100, and the end of the ICP coil 210 is not directly connected to the RF power module 100 or the ground wire. The coil from the intermediate terminal to the end of the ICP coil 210 is unconnected.

[0067] The RF power module 100 provides high-frequency alternating current, which is input into the ICP coil 210 through the middle terminal. RF energy flows through the ICP coil 210, generating a varying magnetic field that ignites and sustains the plasma within the activation chamber 500. The unconnected portion of the coil (from the middle terminal to the end) forms an "open" or "floating" circuit segment. In an RF circuit, the open end can be considered a capacitive load, forming a complex electromagnetic coupling with the rest of the coil. This coupling effect enhances the RF field strength in the coil, coupling more RF energy into the plasma and thereby increasing the plasma density.

[0068] The wafer plasma surface activation equipment further includes a gate 810 and a lifting cylinder 820 . The lifting cylinder 820 drives the gate 810 to open and close at the wafer entrance 540 .

[0069] The inner cylinder 220 is a cylinder with a central cavity, and the outer cylinder 230 is a polygonal cylinder. The polygonal cylinder is provided with heat dissipation holes, and the heat dissipation fan 240 is embedded in the plane cylinder wall of the polygonal cylinder.

[0070] The wafer plasma surface activation equipment also includes a lifting pin lifting mechanism 600, which is fixed to the bottom of the activation chamber 500 through a bracket. The lifting pin lifting mechanism 600 includes a driving cylinder 610, a coupling, a screw, a movable seat 620, a support rod 630 and a supporting ring 640. The driving shaft of the driving cylinder 610 is connected to the screw through a coupling, and the movable seat 620 is threadedly connected to the screw and can move axially. The lower end of the support rod 630 is fixed on the movable seat 620, and the upper end of the support rod 630 is installed with the supporting ring 640. Multiple wafer lifting pins 520 are evenly distributed on the supporting ring 640.

[0071] A plurality of support plates 250 are evenly distributed in the circumferential direction of the outer cavity between the inner cylinder 220 and the outer cylinder 230 , and the ICP coil 210 is installed in the outer cavity through the support plates 250 .

[0072] A wafer plasma surface activation method, using the wafer plasma surface activation equipment, comprises the following steps:

[0073] S1, the gate 810 at the wafer entrance 540 is opened, and the robot sends the wafer into the activation chamber 500;

[0074] S2. Wafer lift pins 520 rise to lift the wafer, and the robot withdraws. Due to its structural design, the robot lacks a Z-axis function and cannot move vertically, thus preventing it from directly placing the wafer from a high position to a low position. The use of lift pins ensures that the wafer can be placed smoothly and accurately on the wafer carrier 510.

[0075] S3, the wafer lifting pin 520 descends, the wafer falls onto the wafer carrier 510, and the gate 810 of the wafer entrance 540 is closed;

[0076] S4. Start the vacuum system 910 to evacuate the activation chamber 500 until the vacuum level in the activation chamber 500 reaches 50 mTorr. Then, introduce the predetermined reaction gas into the activation chamber 500 through the gas pumping line 920. Adjust the frequency of the RF power supply output to 13.56 MHz through the RF matching device.

[0077] S5. During the wafer surface activation process, vacuum is continuously drawn and reactive gases are continuously introduced. After the desired gas environment and vacuum level are achieved within the chamber, an RF power source is connected, generating a magnetic field via the ICP coil 210, which excites the gas molecules within the chamber into a plasma state, thereby beginning the wafer surface activation process. With its high energy and strong reactivity, the plasma effectively excites and dissociates gas molecules, generating a rich array of active species. These active species then interact with the material surface, achieving a series of significant surface modification effects. Plasma surface activation can finely adjust the properties of a material's surface, including but not limited to increasing surface roughness, significantly increasing surface energy, cleverly introducing a variety of functional groups, and profoundly changing the surface's chemical composition. These combined effects collectively enhance the overall performance and functionality of the material surface.

[0078] S6. When the wafer surface activation treatment is completed, the vacuum system 910 is stopped and the gate 810 at the wafer entrance 540 is opened to prepare for unloading the processed wafers.

[0079] S7, the wafer lift pins 520 rise again, lifting the processed wafer to a predetermined position above the wafer stage 510 so that the robot can take it away;

[0080] S8, the robot enters the chamber and stops at a predetermined wafer removal position;

[0081] S9, the wafer lifting pin 520 descends, and the wafer falls on the robot arm;

[0082] S10: The robot drags the wafer out of the activation chamber 500 and enters the next process.

[0083] The present invention improves the wafer plasma surface activation equipment, optimizes the plasma generation mechanism, increases the density and activity of the plasma, and reduces the heat generated during the operation of the equipment. Figure 10 and Figure 11 As shown, the ion density measurement results show that the device achieves a plasma density of up to 1.5E+12 / cm3 and maintains an extremely low electron temperature (about 1eV), thereby ensuring the activation effect of the wafer surface while improving the quality and stability of wafer bonding.

[0084] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A wafer plasma surface activation device, characterized in that: It comprises a radio frequency power supply module (100), an ICP reactor (200), a reactor cover (300), an isolation plate (400), an activation chamber (500), a vacuum pumping system (910), and a gas pumping pipeline (920); The ICP reactor (200) comprises an ICP coil (210), an inner cylinder (220), and an outer cylinder (230); the outer cylinder (230) is sleeved on the outside of the inner cylinder (220); an outer cavity is formed between the outer cylinder (230) and the inner cylinder (220); the ICP coil (210) is spirally installed in the outer cavity and is electrically connected to the radio frequency power module (100); a plurality of evenly distributed cooling fans (240) are provided on the cylinder wall of the outer cylinder (230); The reactor cover (300) is installed above the ICP reactor (200) in an openable and closable manner, the ICP reactor (200) is located on the upper side of the activation chamber (500), and the isolation plate (400) is located between the activation chamber (500) and the ICP reactor (200); A wafer inlet (540) is provided on a side wall of the activation chamber (500), a wafer carrier (510), a wafer lifting pin (520) and a cooling coil (530) are provided in the activation chamber (500), the wafer carrier (510) is fixed in the activation chamber (500), the cooling coil (530) is arranged below the wafer carrier (510), a through hole is provided on the wafer carrier (510), and the wafer lifting pin (520) is installed in the through hole in a manner that it can be raised and lowered; The bottom of the activation chamber (500) is provided with an air extraction port (550), and the vacuum pumping system (910) is communicated with the activation chamber (500) through the air extraction port (550); the top of the activation chamber (500) is provided with an air inlet (560), and the gas pumping pipeline (920) is communicated with the activation chamber (500) through the air inlet (560); the air extraction port (550) and the air inlet (560) are both located on the center line of the activation chamber (500); The inner cylinder (220) is a cylinder with a central cavity, the outer cylinder (230) is a polygonal cylinder, the polygonal cylinder is provided with heat dissipation holes, and the heat dissipation fan (240) is embedded in the plane cylinder wall of the polygonal cylinder; A plurality of support plates (250) are evenly distributed in the circumferential direction of the outer cavity between the inner cylinder (220) and the outer cylinder (230), and the ICP coil (210) is installed in the outer cavity via the support plates (250).

2. The wafer plasma surface activation equipment according to claim 1, characterized in that: The invention also includes an upper cover opening and closing mechanism (700), wherein the upper cover opening and closing mechanism (700) includes a flip arm (710), a worm gear mechanism (720), a rotating shaft (730) and a motor (740), wherein the flip arm (710) is connected to the rotating shaft (730), the motor (740) shaft of the motor (740) is connected to the worm of the worm gear mechanism (720), the turbine of the worm gear mechanism (720) is mounted on the rotating shaft (730), and the motor (740) is connected to the rotating shaft (730). ) drives the rotating shaft (730) to rotate through the worm gear mechanism (720), thereby driving the flip arm (710) to flip, the RF power supply module (100) and the reactor cover (300) are both installed on the flip arm (710), and the flip arm (710) can drive the reactor cover (300) to open or close the ICP reactor (200), and during the opening and closing process, the RF power supply module (100) moves with it to keep the electrical connection continuous.

3. The wafer plasma surface activation equipment according to claim 1 or 2, characterized in that: The ICP coil (210) comprises a starting end, an intermediate connection end, and an end end. The starting end of the ICP coil (210) is connected to a ground wire, the intermediate connection end of the ICP coil (210) is electrically connected to the radio frequency power module (100), and the end end of the ICP coil (210) is not directly connected to the radio frequency power module (100) or the ground wire. The ICP coil (210) is an unconnected coil from the intermediate connection end to the end end.

4. The wafer plasma surface activation equipment according to claim 3, characterized in that: It also includes a gate (810) and a lifting cylinder (820), wherein the lifting cylinder (820) drives the gate (810) to open and close at the wafer entrance (540).

5. The wafer plasma surface activation equipment according to claim 1, characterized in that: It also includes a lifting pin lifting mechanism (600), which is fixed to the bottom of the activation chamber (500) through a bracket. The lifting pin lifting mechanism (600) includes a driving cylinder (610), a coupling, a screw, a movable seat (620), a support rod (630) and a supporting ring (640). The driving shaft of the driving cylinder (610) is connected to the screw through a coupling. The movable seat (620) is threadedly connected to the screw and can move axially. The lower end of the support rod (630) is fixed on the movable seat (620), and the upper end of the support rod (630) is installed with the supporting ring (640). A plurality of wafer lifting pins (520) are evenly distributed on the supporting ring (640).

6. A wafer plasma surface activation method, characterized in that: The wafer plasma surface activation apparatus according to any one of claims 1 to 5 comprises the following steps: S1, the gate (810) at the wafer entrance (540) is opened, and the robot sends the wafer into the activation chamber (500); S2, the wafer lifting pin (520) rises to hold up the wafer, and the robot withdraws; S3, the wafer lifting needle (520) descends, the wafer falls onto the wafer carrier (510), and the wafer entrance (540) gate (810) is closed; S4, starting the vacuum system (910) to vacuum the activation chamber (500), and when the vacuum degree reaches a set value, introducing a predetermined reaction gas into the activation chamber (500) through the gas pumping pipeline (920); S5, after the required gas environment and vacuum degree are reached in the chamber, a radio frequency power supply is connected, and a magnetic field is generated through the ICP coil (210), which excites the gas molecules in the chamber into a plasma state, and starts activation treatment on the wafer surface; S6. When the wafer surface activation treatment is completed, the vacuum system (910) is stopped, and the gate (810) at the wafer entrance (540) is opened to prepare for unloading the processed wafers; S7, the wafer lifting pin (520) rises again to lift the processed wafer to a predetermined position above the wafer carrier (510) so that the robot can take it away; S8, the robot enters the chamber and stops at a predetermined wafer removal position; S9, the wafer lifting pin (520) descends, and the wafer falls on the robot arm; S10, the robot drags the wafer out of the activation chamber (500) and enters the next process.

7. The wafer plasma surface activation method according to claim 6, wherein: In step S4, until the vacuum degree in the activation chamber (500) reaches 50 mTorr, a predetermined reaction gas is introduced into the activation chamber (500).

8. The wafer plasma surface activation method according to claim 7, wherein: In step S5, the frequency output by the radio frequency power supply is adjusted to 13.56 MHz through the radio frequency matching device.

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